CN104681575A - LED (Light-Emitting Diode) element - Google Patents
LED (Light-Emitting Diode) element Download PDFInfo
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- CN104681575A CN104681575A CN201310631968.XA CN201310631968A CN104681575A CN 104681575 A CN104681575 A CN 104681575A CN 201310631968 A CN201310631968 A CN 201310631968A CN 104681575 A CN104681575 A CN 104681575A
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- light emitting
- emitting diode
- those
- light
- luminescence unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
Abstract
The invention discloses an LED (Light-Emitting Diode) element which comprises a substrate, a plurality of LED units and a plurality of conduction wiring structures, wherein the plurality of LED units are formed on a first surface of the substrate; the plurality of LED units form a series array and a plurality of adjacent light-emitting unit lines and a plurality of adjacent light-emitting unit rows are formed; each of the plurality of light-emitting unit lines and the plurality of light-emitting unit rows is respectively provided with at least three LED units; series connection modes of the LED units in each light-emitting unit line or on each light-emitting row comprise a vertical series connection mode and a horizontal series connection mode; the plurality of conduction wiring structures are connected with the plurality of LED units; the series connection modes of at least three LED units in each two adjacent light-emitting unit lines are the same; in at least two adjacent light-emitting unit lines, series connection modes of the LED units in each light-emitting unit line and the LED units and the LED units in the adjacent light-emitting unit lines at least comprise one-time vertical series connection and two-time horizontal series connection. By the arrangement, the LED element has high luminous efficiency.
Description
Technical field
The present invention relates to a kind of light-emitting diode, especially relate to a kind of array LED element with high light-emitting efficiency.
Background technology
The principle of luminosity of light-emitting diode (LED) is different from conventional light source with structure, have that power consumption is low, component life is long, without the need to advantages such as warm lamp time, reaction speed are fast, add that its volume is little, vibration resistance, be applicable to volume production, easy fit applications demand makes element that is minimum or array, and application is commercially rather extensive.Such as, optical display, laser diode, traffic sign, data storage device, communication device, lighting device and medical treatment device etc.
Existing high-voltage LED element 1, as shown in Figure 1A and Figure 1B, comprise a transparency carrier 10, multiple light emitting diode 12 extends in two-dimensional directional, close-packed arrays is formed on transparency carrier 10, and the extension lamination 120 of each light emitting diode comprises one first semiconductor layer 121, active layer 122 and one second semiconductor layer 123.Because transparency carrier 10 is non-conductive, therefore between multiple light emitting diode extension lamination 120 by etching form groove 14 after each light emitting diode 12 can be made insulated from each other, in addition again by partially-etched multiple light emitting diode extension lamination 120 to the first semiconductor layer 121 with forming section exposed region.Then, then form a conductive wires structure 19 respectively on the exposed region of the first semiconductor layer 121 of adjacent light emitting diode extension lamination 120 and the second semiconductor layer 123, comprise the first electrode 18 and the second electrode 16.First electrode 18 and the second electrode 16 comprise again the first electrode extension 180 and the second electrode extension 160 respectively separately, on the first semiconductor layer 121 being formed at adjacent LED unit extension lamination 120 respectively and the second semiconductor layer 123, in the dispersed inflow semiconductor layer of assist current.Be connected to the second semiconductor layer 123 and the first semiconductor layer 121 of multiple adjacent light emitting diode 12 by conductive wires structure 19 selectivity, make the circuit forming serial or parallel connection between multiple light emitting diode 12.Wherein, it can be air below conductive wires structure 19; also can before formation conductive wires structure 19; insulating barrier 13 is formed with deposition techniques such as chemical vapour deposition (CVD) mode (CVD), physical vapour deposition (PVD) mode (PVD), sputters (sputtering) in advance, as being electrically insulated between the protection of epitaxial loayer and adjacent LED unit 12 between the epitaxial layer portion surface and close light emitting diode 12 epitaxial loayer of light emitting diode 12.The material of insulating barrier 13 is better can be such as aluminium oxide (Al
2o
3), silica (SiO
2), aluminium nitride (AlN), silicon nitride (SiN
x), titanium dioxide (TiO
2), tantalum pentoxide (Tantalum pentoxide, Ta
2o
5) etc. material or its combination.
But, when being linked by conductive wires structure 19 circuit carried out between light emitting diode 12, due to light emitting diode 12 and between groove 14 difference of height apart from quite large, easily produce the problem that wire bond is bad or break when forming conductive wires structure 19, and then affect the yield of element.
In addition, above-mentioned light-emitting diode 1 can also be connected with other elements combinations to form a light-emitting device (light-emitting apparatus) further.Fig. 2 is existing luminous device structure schematic diagram.As shown in Figure 2, a light-emitting device 100 comprises the secondary carrier (sub-mount) 110 that has at least one circuit 101, to carry above-mentioned light-emitting diode 1; And an electric connection structure 104, to be electrically connected the first electrode pad 16 ' of light-emitting component 1, the second electrode pad 18 ' and the circuit 101 on time carrier 110; Wherein, above-mentioned secondary carrier 110 can be that lead frame (lead frame) or large scale inlay substrate (mounting substrate), plans and improve its radiating effect to facilitate the circuit of light-emitting device 100.Above-mentioned electric connection structure 104 can be bonding wire (bonding wire) or other connecting structures.
Summary of the invention
For solving the problem, the invention provides a kind of light-emitting diode, comprising: a substrate, there is a first surface; Multiple light emitting diode, formed on the first surface, wherein multiple light emitting diode forms a serial array, and there are the capable and multiple adjacent luminescence unit row of multiple adjacent luminescence unit, wherein luminescence unit capable and luminescence unit row respectively have at least three light emitting diodes, and between the light emitting diode of the capable and luminescence unit row of luminescence unit, tandem comprises vertical serial connection and level serial connection; Multiple conductive wires structure, connects multiple light emitting diode; And at least two adjacent luminescence unit capable in the tandem of at least three light emitting diodes identical, and at least two adjacent luminescence units capable in a luminescence unit capable in light emitting diode capable with adjacent luminescence unit in the tandem of light emitting diode at least comprise once and to be vertically connected in series with two sub-levels.
A kind of light-emitting diode, comprises: a substrate, has a first surface; Multiple light emitting diode, formed on the first surface, wherein multiple light emitting diode forms a serial array, and it is capable to have the individual adjacent luminescence unit of n, wherein n≤5, and do a level serial connection between the light emitting diode doing vertically serial connection or same luminescence unit row between the capable light emitting diode of same luminescence unit, and at least two adjacent luminescence units capable in the serial connection direction of at least three light emitting diodes identical; Multiple conductive wires structure, connects multiple light emitting diode; One first contact light emitting diode, be formed in first surface and the first luminescence unit capable on, and one first electrode pad is formed on the first contact light emitting diode; One second contact light emitting diode, formed on the first surface and the n-th luminescence unit capable on, and one second electrode pad is formed on the second contact light emitting diode; And at least three light emitting diodes that wherein the first luminescence unit is capable have one first area, and capable at least three light emitting diodes of the n-th luminescence unit have a second area, and the first area and second area unequal.
A kind of light-emitting diode, comprises: a substrate, has a first surface; Multiple light emitting diode, has at least four edges respectively, and formed on the first surface, wherein multiple light emitting diode forms a serial array, and it is capable to have at least three adjacent luminescence units; And multiple conductive wires structure, connect multiple light emitting diode, wherein two conductive wires structures of at least one light emitting diode are formed on the edge, the same side of light emitting diode, and the adjacent luminescence unit of light emitting diode construct trans at least two is capable.
Accompanying drawing explanation
Figure 1A is a structure chart, display one existing array light-emitting diode component side TV structure figure;
Figure 1B is a structure chart, TV structure figure on display one existing array light-emitting diode element;
Fig. 2 is a schematic diagram, display one existing luminous device structure schematic diagram;
Fig. 3 A is a structure chart, and display is according to the light emitting diode side-looking structure chart of one embodiment of the invention;
Fig. 3 B-Fig. 3 G is a structure chart, and display is according to TV structure figure on the light emitting diode of one embodiment of the invention;
Fig. 4 A to Fig. 4 C shows a light emitting module schematic diagram;
Fig. 5 A-Fig. 5 B shows a light-source generation device schematic diagram; And
Fig. 6 illustrates a bulb schematic diagram.
Embodiment
The present invention discloses a kind of light-emitting diode structure, in order to make of the present inventionly to describe more detailed and complete, please refer to following description and coordinating the diagram of Fig. 3 A to Fig. 6.
Below coordinate accompanying drawing that various embodiments of the present invention are described.Along with the market demand, the volume of light-emitting diode reduces gradually.When in light-emitting diode, the area of each light emitting diode is corresponding reduce time, be formed at the electrode on light emitting diode exiting surface, electrode extension, with lighttight structures such as conductive wires structures, the corresponding light extraction efficiency significantly affecting light emitting diode.
First, Fig. 3 A and Fig. 3 B is depicted as end view and the top view of the array light-emitting diode element 2 of first embodiment of the invention.Light-emitting diode 2 has a substrate 20, and substrate 20 has first surface 201 and bottom surface 202, and wherein first surface 201 is relative with bottom surface 202.Substrate 20 is not defined as homogenous material, also can be the composite substrate combined by multiple different materials.Such as: substrate 20 can comprise two first substrates be bonded with each other and second substrate (not shown).In the present embodiment, the material of substrate 20 is sapphire (sapphire).But the material of substrate 20 also can including but not limited to lithium aluminate (lithium aluminum oxide, LiAlO
2), zinc oxide (zinc oxide, ZnO), gallium phosphide (gallium phosphide, GaP), glass (Glass), organic polymer sheet material, aluminium nitride (aluminum nitride, AlN), GaAs (gallium arsenide, GaAs), diamond (diamond), quartz (quartz), silicon (silicon, Si), carborundum (silicon carbide, SiC), class diamond carbon (diamond like carbon, DLC).
Then, on the first surface 201 of substrate 20, multiple array LED unit 22 extending arrangement with two dimension is formed.The production method of array LED unit 22, such as, below described in:
First, with traditional epitaxial growth manufacture craft, an epitaxial growth substrate (not shown) forms an extension lamination 220, comprises the first semiconductor layer 221, active layer 222, and the second semiconductor layer 223.The material of growth substrate is can including but not limited to GaAs (GaAs), germanium (germanium, Ge), indium phosphide (indium phosphide, InP), sapphire (sapphire), carborundum (silicon carbide, SiC), silicon (silicon), lithia aluminium (lithium aluminum oxide, LiAlO
2), zinc oxide (zinc oxide, ZnO), gallium nitride (gallium nitride, GaN), aluminium nitride (aluminum nitride, AlN).Above-mentioned first semiconductor layer 221, active layer 222, and the material of the second semiconductor layer 223 element that can comprise one or more be selected from gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) form group.Conventional material is as the group III-nitride such as AlGaInP (AlGaInP) series, aluminum indium gallium nitride (AlGaInN) series, zinc oxide (ZnO) series etc.
Then, portion of epi lamination is removed to form multiple light emitting diode extension lamination 220 of spaced apart in growth substrate with the choice of technology of gold-tinted lithographic fabrication process, as shown in Figure 3 B.Wherein, the exposed region forming each light emitting diode first semiconductor layer 221 with the etching of gold-tinted lithographic fabrication process technology can also be comprised, with the formation platform as subsequent conductive distribution structure.
In order to increase the light extraction efficiency of components integers, can shift by substrate the technology engaged with substrate, light emitting diode extension lamination 220 is arranged on substrate 20.Light emitting diode extension lamination 220 directly can engage with substrate 20 in the mode of heating or pressurization, or light emitting diode extension lamination 220 to be adhered with substrate 20 by transparent adhesion coating (not shown) and engage.Wherein, transparent adhesion coating can be an organic polymer transparent adhesive tape material, the materials such as such as polyimides (polyimide), benzocyclobutene family macromolecule (BCB), perfluorocyclobutanearyl family macromolecule (PFCB), epoxylite (Epoxy), acryl resinoid (Acrylic Resin), polyester resin (PET), polycarbonate resin (PC) or its combination; Or transparent conductive oxide metal level, such as tin indium oxide (ITO), indium oxide (InO), a tin oxide (SnO
2), zinc oxide (ZnO), tin oxide fluorine (FTO), antimony tin oxide (ATO), cadmium tin-oxide (CTO), zinc oxide aluminum (AZO), mix the materials such as cadmium zinc oxide (GZO) or its combination; Or inorganic insulation layer, such as an aluminium oxide (Al
2o
3), silicon nitride (SiN
x), silica (SiO
2), aluminium nitride (AlN), titanium dioxide (TiO
2), tantalum pentoxide (Tantalum Pentoxide, Ta
2o
5) etc. material or its combination.
In fact, the method that light emitting diode extension lamination 220 is arranged on substrate 20 is not limited thereto, should be appreciated that in the people in the art with usual knowledge, according to different architectural characteristics, light emitting diode extension lamination 220 also can the mode of epitaxial growth directly be formed on substrate 20.In addition, according to the difference of substrate 20 transfer number, can form the second semiconductor layer 223 adjacent with the first surface 201 of substrate, the first semiconductor layer 221 is on the second semiconductor layer 223, and centre accompanies the structure of active layer 222.
Then; insulating barrier 23 is formed with the deposition techniques such as chemical vapour deposition (CVD) mode (CVD), physical vapour deposition (PVD) mode (PVD), sputter (sputtering), as being electrically insulated between the protection of epitaxial loayer and adjacent LED unit 22 between the part surface and adjacent LED unit extension lamination 220 of light emitting diode extension lamination 220.The material of insulating barrier 23 is better can be such as aluminium oxide (Al
2o
3), silica (SiO
2), aluminium nitride (AlN), silicon nitride (SiN
x), titanium dioxide (TiO
2), tantalum pentoxide (Tantalum Pentoxide, Ta
2o
5) etc. material or its composite combined.
Afterwards, multiple conductive wires structure 29 be separated completely is each other formed on the surface respectively with the second semiconductor layer 223 in the mode of sputter on the surface at the first semiconductor layer 221 of two adjacent light emitting diodes 22.These multiple conductive wires structures 29 be separated completely each other, one end is configured on the first semiconductor layer 221 in the mode that single direction distributes, directly contact with the first semiconductor layer 221, and make conductive wires structure 29 electrically connect each other by the first semiconductor layer 221; These conductive wires structures 29 spatially separated from one another continue to extend on the second semiconductor layer 223 of another adjacent light emitting diode 22, second semiconductor layer 223 of the other end and light emitting diode 22 is electrical connected, and makes two adjacent light emitting diodes 22 form electrical series.
In fact, the method that adjacent light emitting diode 22 carries out electrically connect is not limited thereto, should be appreciated that in the people in the art with usual knowledge, by conductive wires structure two ends are configured on the semiconductor layer of identical or different conduction polarity of different light emitting diode respectively, can make between light emitting diode, to form electrically connect structure that is in parallel or series connection.
Seeing it from Fig. 3 B top view, circuit design is in the light-emitting diode 2 of a string series connection arrayed, on first semiconductor layer 221 of the first contact light emitting diode B1 of serial array circuit end, form the first electrode pad 26.In one embodiment, also can select to form the second electrode pad 28 on second semiconductor layer 223 of the second contact light emitting diode B2 of another end of serial array circuit.By this first electrode pad 26 and the second electrode pad 28, can be formed with external power source or other circuit elements in the mode such as routing or scolding tin and be electrically connected.Wherein, form the manufacture craft of the first electrode pad 26 and the second electrode pad 28, can carry out in same formation manufacture craft with conductive wires structure 29, also can be completed by repeatedly manufacture craft.And form the material of the first electrode pad 26 and the second electrode pad 28, can be identical or different with the material forming conductive wires structure 29 respectively.Wherein, in order to reach certain electrical conductivity, first electrode pad 26, second electrode pad 28 is better with conductive wires structure 29 material can be such as metal, such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminium (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn) etc., its alloy or its stack combinations.
In one embodiment, see it with Fig. 3 B top view, each light emitting diode of light-emitting diode 2 is a series connection arrayed in circuit design, and has four adjacent capable R1-R4 of luminescence unit, and the luminescence unit row C1-C4 that four adjacent.In the present embodiment, each light emitting diode of the capable R1 of first luminescence unit starts to contact mutually with vertical direction from the second contact light emitting diode B2, and arrange R1C4 level serial connection to the second row the 4th row R2C4 via the first row the 4th, R2C4 is arranged afterwards by the second row the 4th, contact mutually to the second row first row R2C1 with vertical direction, then level serial connection is to the third line first row R3C1.Next as shown in Figure 3 B, between the third line and fourth line, light emitting diode becomes does alternate being connected in series of vertical and horizontal with the light emitting diode of adjacent lines, as the third line first row R3C1 is connected in series as level with fourth line first row R4C1, then, fourth line first row R4C1 does vertical serial connection with fourth line secondary series R4C2; Then, fourth line secondary series R4C2 is connected in series as level with the third line secondary series R3C2, and then, the third line secondary series R3C2 arranges R3C3 with the third line the 3rd and does vertical serial connection, and the third line the 3rd row R3C3 arranges R4C3 with fourth line the 3rd again and is connected in series as level; Then, fourth line the 3rd row R4C3 arranges R4C4 with fourth line the 4th and does vertical serial connection, finally, fourth line the 4th row R4C4 arranges R3C4 with the third line the 4th again and is connected in series as level, and form one first electrode pad 26 on first semiconductor layer 221 of the third line the 4th row R3C4, make it formation one first and contact light emitting diode B1.
In the present embodiment, the light emitting diode of at least three the first rows is identical with the serial connection direction of the light emitting diode of at least three the second row, and is vertical serial connection in the present embodiment; Arrange with the 4th light emitting diode arranged then for do alternate being connected in series of vertical and horizontal with the light emitting diode of adjacent lines the 3rd, and the first contact light emitting diode B1 and second contact light emitting diode B2 is not formed on the geometry diagonal of light-emitting diode 2.
Fig. 3 C is the top view of display second embodiment of the invention, in the present embodiment, each light emitting diode of light-emitting diode 3 is a series connection arrayed in circuit design, and there are four adjacent capable R1-R4 of luminescence unit, and the luminescence unit row C1-C4 that four adjacent, its manufacture method is identical with the first embodiment with material, does not repeat them here.
In this embodiment, its the first row is identical with the first embodiment with the tandem of the second row, namely each light emitting diode of the capable R1 of the first luminescence unit starts to contact mutually with vertical direction from the second contact light emitting diode B2, and the light emitting diode of at least three the first rows is identical with the serial connection direction of the light emitting diode of at least three the second row, and be vertical serial connection in the present embodiment.
And in order to make the second contact light emitting diode B1 be formed in the 4th row, in the present embodiment, to be connected in series with the circuit of the 4th light emitting diode arranged at the 3rd row and to arrange R3C4 with the third line the 4th with the first embodiment also adopt outside vertical serial connection unlike arranging R3C3 at the third line the 3rd, the light emitting diode of all the other adjacent lines makes the alternate serial connection of vertical and horizontal, and form one first electrode pad 26 on first semiconductor layer 221 of fourth line the 3rd row R4C3, make it formation one first and contact light emitting diode B1.And the first contact light emitting diode B1 and second contact light emitting diode B2 is not formed on the geometry diagonal of light-emitting diode 2.
Fig. 3 D is the top view of display third embodiment of the invention, in the present embodiment, each light emitting diode of light-emitting diode 4 is a series connection arrayed in circuit design, and there are five adjacent capable R1-R5 of luminescence unit, its manufacture method is identical with the first embodiment with material, does not repeat them here.
In this embodiment, be each light emitting diode to the first contact light emitting diode B1 that contacts mutually by the second contact light emitting diode B2.Wherein each light emitting diode of the capable R1-R5 of each luminescence unit is contacted mutually with vertical direction, and last of the luminescence unit of each row series winding is connected in series with adjacent behavior level.Namely the light emitting diode of at least three every a line is identical with the serial connection direction of the light emitting diode of the adjacent lines of at least three, and is vertical serial connection in the present embodiment.
In the present embodiment, in order to make the current density of each light emitting diode more even, each light emitting diode comprising the capable R1 of the first luminescence unit of the second contact light emitting diode B2 can have the first area, each light emitting diode only comprising the capable R2-R4 of the second to the 4th luminescence unit of light emitting diode can have second area, and each light emitting diode of the capable R5 of the 5th luminescence unit comprising the first contact light emitting diode B1 can have the 3rd area, wherein the first area, second area and the 3rd area are unequal.
In one embodiment, the first area, second area or the 3rd area difference that both compare arbitrarily is less than 20%.In another embodiment, the capable R1 of the first luminescence unit comprising the second contact light emitting diode B2 can have α light emitting diode, the arbitrary row only comprising the capable R2-R4 of the second to the 4th luminescence unit of light emitting diode can have β light emitting diode, and the capable R5 of the 5th luminescence unit comprising the first contact light emitting diode B1 can have γ light emitting diode, wherein α, β and γ are unequal mutually.In another embodiment, the first contact light emitting diode B1 and second contact light emitting diode B2 can be positioned on the geometry diagonal of light-emitting diode 4.
Fig. 3 E is the top view of display fourth embodiment of the invention, and be the change case of the first embodiment, in the present embodiment, each light emitting diode of light-emitting diode 5 is a series connection arrayed in circuit design, and there are six adjacent capable R1-R6 of luminescence unit, its manufacture method is identical with the first embodiment with material, does not repeat them here.
In the present embodiment, in arbitrary row that first to fourth luminescence unit is capable, the serial connection direction of at least three light emitting diodes is identical, and is vertical serial connection in the present embodiment; Arrange with the 6th light emitting diode arranged then for do alternate being connected in series of vertical and horizontal with the light emitting diode of adjacent lines the 5th, and the first contact light emitting diode B1 and second contact light emitting diode B2 is not formed on the geometry diagonal of light-emitting diode 4.
With the first embodiment unlike, in the present embodiment, the capable R1 of the first luminescence unit comprising the second contact light emitting diode B2 can have α light emitting diode, only comprise second to the 4th of light emitting diode and arbitrary row of the 6th luminescence unit capable R2-R4, R6 can have β light emitting diode, and the capable R5 of the 5th luminescence unit comprising the first contact light emitting diode B1 can have γ light emitting diode, wherein α ≠ β=γ.
Fig. 3 F is the top view of display fifth embodiment of the invention, in the present embodiment, each light emitting diode of light-emitting diode 6 is a series connection arrayed in circuit design, and there are three adjacent capable R1-R3 of luminescence unit, its manufacture method is identical with the first embodiment with material, does not repeat them here.
In the present embodiment, in arbitrary row that the in first to the 3rd luminescence unit is capable, the serial connection direction of at least three light emitting diodes is identical, and is vertical serial connection in the present embodiment.In the present embodiment, last light emitting diode that each luminescence unit is capable can do vertical serial connection with the light emitting diode of adjacent lines, and the first contact light emitting diode B1 and second contact light emitting diode B2 is formed on the geometry diagonal of light-emitting diode 6.
In the present embodiment, during each luminescence unit is capable, have at least two conductive wires structures 29 of a light emitting diode to be formed on the edge, the same side of this light emitting diode, and luminescence unit that can be simultaneously adjacent with two is capable does vertical serial connection simultaneously.In another embodiment, two light emitting diodes during each luminescence unit is capable, are had at least to have different areas, and/or different Aspect Ratios.
Fig. 3 G is the top view of display sixth embodiment of the invention, in the present embodiment, each light emitting diode of light-emitting diode 7 is a series connection arrayed in circuit design, and there are three adjacent capable R1-R3 of luminescence unit, its manufacture method is identical with the first embodiment with material, does not repeat them here.
In the present embodiment, each luminescence unit walks to few three light emitting diodes and has one first area, and capable at least three light emitting diodes of the 3rd luminescence unit have a second area, and the first area and second area unequal.
Fig. 4 A to Fig. 4 C shows a light emitting module schematic diagram, Fig. 4 A is display one light emitting module external perspective view, one light emitting module 500 can comprise a carrier 502, produce the light-emitting component (not shown) from any embodiment of the present invention, multiple lens 504,506,508 and 510, and two power supplys supply terminal 512 and 514.
Fig. 4 B-Fig. 4 C is display one light emitting module cutaway view, and Fig. 4 C is the enlarged drawing in the E district of Fig. 4 B.Wherein carrier 502 can comprise carrier 503 and lower carrier 501 on one, wherein descends a surface of carrier 501 can contact with upper carrier 503, and comprises lens 504 and 508 and be formed on carrier 503.Upper carrier 503 can form at least one through hole 515, and can be formed in above-mentioned through hole 515 according to the light-emitting diode 2,3,4,5 that the embodiment of the present invention is formed and to contact with lower carrier 501, and is surrounded by glue material 521, and on glue material 521, form lens 508.
In one embodiment, the luminous efficiency that a reflector 519 increases light-emitting component 300 can be formed on the two side of through hole 515; The lower surface of lower carrier 501 can form a metal level 517 with enhancing radiating efficiency.
Fig. 5 A-Fig. 5 B shows a light-source generation device schematic diagram 600, one light-source generation device 600 can comprise light emitting module 500, shell 540, power system (not shown) to supply light emitting module 600 1 electric current and a control element (not shown), in order to control power system (not shown).Light-source generation device 600 can be a lighting device, such as street lamp, car light or room lighting light source, also can be a back light of backlight module in traffic sign or a flat-panel screens.
Fig. 6 illustrates a bulb schematic diagram.Bulb 900 comprises a shell 921, lens 922, lighting module 924, support 925, radiator 926, serial connection portion 927 and an electricity serial connection device 928.Wherein lighting module 924 comprises a carrier 923, and on carrier 923, comprise the light-emitting diode 2,3,4,5 at least one above-described embodiment.
In one embodiment of the invention, between the first conductive-type semiconductor layer 221 and substrate 20, still optionally comprise a resilient coating (buffer layer, does not show).This resilient coating is between two kinds of material systems, makes the material system of substrate " transition " to the material system of semiconductor system.For the structure of light-emitting diode, on the one hand, resilient coating reduces by two kinds of unmatched material layers of storeroom lattice.On the other hand, resilient coating also can be in conjunction with the individual layer of two kinds of materials or two isolating constructions, multilayer or structure, and its available material is as organic material, inorganic material, metal and semiconductor etc.; Its available structure is as reflector, heat-conducting layer, conductive layer, ohmic contact (ohmic contact) layer, anti-deformation layer, Stress Release (stress release) layer, Stress relief (stress adjustment) layer, joint (bonding) layer, wavelength conversion layer and mechanical fixture construction etc.
Extension lamination 220 also optionally forms a contact layer (not shown).Contact layer is arranged at the side of extension lamination 220 away from substrate 20.Specifically, contact layer can be optical layers, electrical layer or the combination both it.Optical layers to change the electromagnetic radiation or light that come from or enter active layer 222.At this be referred to as " change " and refer at least one optical characteristics changing electromagnetic radiation or light, afore-mentioned characteristics is including but not limited to frequency, wavelength, intensity, flux, efficiency, colour temperature, color rendering (rendering index), light field (light field) and angle of visibility (angle of view).Electrical layer be can make the numerical value of at least one in the voltage between arbitrary group of opposite side of contact layer, resistance, electric current, electric capacity, density, distribution changes or has the trend changed.The constituent material of contact layer to comprise in oxide, conductive oxide, transparent oxide, the oxide with 50% or more penetrance, metal, relatively transparent metal, the metal with 50% or more penetrance, organic matter, inanimate matter, fluorescence, phosphorescence thing, pottery, semiconductor, the semiconductor of doping and undoped semiconductor at least one.In some application, the material of contact layer be tin indium oxide, cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum, with at least one in zinc-tin oxide.If transparent metal relatively, its thickness is preferably about 0.005 μm ~ 0.6 μm.In one embodiment, because contact layer has preferably transverse current diffusion rate, evenly can be diffused among extension lamination 220 in order to assist current.Generally speaking, different with the mode of manufacture craft and change to some extent according to the impurity of contact layer blending, the width of its energy gap can between 0.5eV to 5eV.
Though each accompanying drawing and explanation only distinguish corresponding specific embodiment above, but, in each embodiment illustrated or disclosed element, execution mode, design criterion and know-why except aobviously each other conflicting mutually, contradiction or be difficult to except common implementing, we when can according to its required arbitrarily with reference to, exchange, collocation, to coordinate or merging.
Although the present invention has illustrated as above, the scope that so it is not intended to limiting the invention, enforcement order or the material used and process for making.The various modification that the present invention is done and change, neither de-spirit of the present invention and scope.
Claims (10)
1. a light-emitting diode, comprises:
Substrate, has first surface;
Multiple light emitting diode, formed on the first surface, wherein those multiple light emitting diodes form a serial array, and there are the capable and multiple adjacent luminescence unit row of multiple adjacent luminescence unit, wherein those luminescence units capable and those luminescence units row respectively have at least three those light emitting diodes, and between those light emitting diodes of capable and those luminescence units row of those luminescence units, tandem comprises vertical serial connection and level serial connection;
Multiple conductive wires structure, connects those multiple light emitting diodes; And
The tandem of at least three those light emitting diodes during at least two adjacent those luminescence units are capable is identical, and at least two adjacent those luminescence units capable in this luminescence unit capable in those light emitting diodes capable with this adjacent luminescence unit in the tandem of those light emitting diodes at least comprise once and to be vertically connected in series with two sub-levels.
2. a light-emitting diode, comprises:
Substrate, has first surface;
Multiple light emitting diode, formed on the first surface, wherein those multiple light emitting diodes form a serial array, and it is capable to have the individual adjacent luminescence unit of n, wherein n≤5, and do a level serial connection between those light emitting diodes doing vertically serial connection or same luminescence unit row between capable those light emitting diodes of same luminescence unit, and at least two adjacent those luminescence units capable in the serial connection direction of at least three those light emitting diodes identical;
Multiple conductive wires structure, connects those multiple light emitting diodes;
First contact light emitting diode, be formed in this first surface and this first luminescence unit capable on, and one first electrode pad be formed in this first contact light emitting diode on;
Second contact light emitting diode, formed on the first surface and this n-th luminescence unit capable on, and one second electrode pad be formed in this second contact light emitting diode on; And
At least three those light emitting diodes that wherein this first luminescence unit is capable have the first area, and capable at least three those light emitting diodes of this n-th luminescence unit have second area, and this first area and this second area unequal.
3. light-emitting diode as claimed in claim 2, each those light emitting diodes that wherein 2nd ~ n-1 luminescence unit is capable have one the 3rd area, and the 3rd area and this first area, and/or this second area is unequal, and/or the difference of this first area and this second area is less than 20%.
4. light-emitting diode as claimed in claim 2, wherein at least two adjacent those luminescence units capable in this luminescence unit capable in those light emitting diodes capable with this adjacent luminescence unit in the tandem of those light emitting diodes at least comprise once and to be vertically connected in series with two sub-levels.
5. light-emitting diode as claimed in claim 2, wherein this first luminescence unit is capable has α light emitting diode, and this n-th luminescence unit is capable has β light emitting diode, and α and β is unequal.
6. a light-emitting diode, comprises:
Substrate, has first surface;
Multiple light emitting diode, has at least four edges respectively, and formed on the first surface, wherein those multiple light emitting diodes form a serial array, and it is capable to have at least three adjacent luminescence units; And
Multiple conductive wires structure, connect those multiple light emitting diodes, wherein this two conductive wires structure of this light emitting diode at least one is formed on the edge, the same side of this light emitting diode, and adjacent those luminescence units of this light emitting diode construct trans at least two are capable.
7. the light-emitting diode as described in claim 1 or 6, also comprises the first contact light emitting diode, is formed on the first surface, and the first electrode pad is formed on this first contact light emitting diode; And
Second contact light emitting diode, formed on the first surface, and one second electrode pad be formed in this second contact light emitting diode on, wherein this first contact light emitting diode and this second contact light emitting diode are formed at initiating terminal and the end of this serial array respectively, and/or wherein this first contact light emitting diode or this second contact light emitting diode comprise: the first semiconductor layer, second semiconductor layer, be formed on this first semiconductor layer, and active layer, be formed between this first semiconductor layer and this second semiconductor layer.
8. light-emitting diode as claimed in claim 2, wherein this first contact light emitting diode second contacts light emitting diode with this and is not formed on the geometry diagonal of this light-emitting diode.
9. the light-emitting diode as described in claim 1,2 or 6, wherein any two those multiple conductive wires structures are separated each other completely, and wherein those its first ends of conductive wires structure arbitrary are formed on this second semiconductor layer, and by this second semiconductor layer electrically connect each other; Its second end is respectively formed on another this light emitting diode, directly those semiconductor layers of comprising of another this light emitting diode of contact one of them.
10. light-emitting diode as claimed in claim 1 or 2, wherein this first contact light emitting diode second contacts light emitting diode with this and is formed on one first limit of this light-emitting diode and a Second Edge on this first limit relatively.
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| CN201310631968.XA CN104681575A (en) | 2013-11-29 | 2013-11-29 | LED (Light-Emitting Diode) element |
| CN201910393947.6A CN110176469B (en) | 2013-11-29 | 2013-11-29 | Light emitting diode element |
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| CN101305476A (en) * | 2005-12-16 | 2008-11-12 | 首尔Opto仪器股份有限公司 | Light emitting device with light emitting cells arrayed |
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| CN100409461C (en) * | 2004-10-20 | 2008-08-06 | 晶元光电股份有限公司 | Structure of LED and its mfg method |
| CN100595927C (en) * | 2007-07-05 | 2010-03-24 | 胜华科技股份有限公司 | Active element array substrate and liquid crystal display panel |
| KR20100095666A (en) * | 2009-02-12 | 2010-09-01 | 서울반도체 주식회사 | Light emitting diode chip for high voltage operation and light emitting diode package having the same |
| TWI533474B (en) * | 2009-10-20 | 2016-05-11 | 晶元光電股份有限公司 | Optoelectronic device |
| TWI438895B (en) * | 2012-02-09 | 2014-05-21 | Lextar Electronics Corp | Light emitting diode array |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090302334A1 (en) * | 2002-07-15 | 2009-12-10 | Epistar Corporation | Light-emitting element array |
| CN101305476A (en) * | 2005-12-16 | 2008-11-12 | 首尔Opto仪器股份有限公司 | Light emitting device with light emitting cells arrayed |
| CN103022070A (en) * | 2012-11-22 | 2013-04-03 | 华南理工大学 | Large-sized LED (Light Emitting Diode) chip with novel light-emitting unit structure |
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| CN110176469A (en) | 2019-08-27 |
| CN110176469B (en) | 2022-01-04 |
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Application publication date: 20150603 |