CN104659132A - 一种高性能太阳能电池组件 - Google Patents
一种高性能太阳能电池组件 Download PDFInfo
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- 239000012528 membrane Substances 0.000 claims description 12
- 239000004594 Masterbatch (MB) Substances 0.000 claims description 10
- 239000002033 PVDF binder Substances 0.000 claims description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 6
- 241000446313 Lamella Species 0.000 claims description 4
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- 239000011247 coating layer Substances 0.000 abstract 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 239000011787 zinc oxide Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- 238000007766 curtain coating Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical class [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
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- 230000000630 rising effect Effects 0.000 description 1
- 229930000044 secondary metabolite Natural products 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical group [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
本发明公布了一种高性能太阳能电池组件,包括设置在第一层的超白玻璃层,设置在第二层的高透EVA胶膜层,设置在第三层的电池片层,设置在第四层的低导热EVA胶膜层,以及设置在第五层的导热背板层。本发明在电池片层的下层设置了低导热EVA胶膜层,不仅让太阳能电池组件保持原有的性能,避免发生绝缘电阻下降,耐水性能降低,出现PID的现象,同时设置的导热背板层又起到良好的导热作用。
Description
技术领域
本发明涉及一种高性能太阳能电池组件。
背景技术
太阳能组件在太阳光照射下发电,同时也伴随着产生热量。这种使电池板自身温度升高会导致光电转换效果效率降低。有数据表明,电池板的温度每升1℃,光电转化率下降0.4%。目前光伏太阳能转换率在14%-18%之间,因此降低电池板自身工作温度,让电池板的温度有效散发出来,保证光转换效率是一个不可忽略的因素。目前有实验改变电池片下层EVA导热性的方法来解决散热问题,因为100%EVA膜导热系数只有0.32W/m*K。如果加入合适的导热材料能使EVA的导热系数提高到2.8W/m*K,这会是一个十分理想效果。但是把导热材料加入到EVA后,会影响到EVA拉伸度,耐水性能,以及绝缘强度。
发明内容
本发明目的是针对现有技术存在的缺陷提供一种高性能太阳能电池组件。
本发明为实现上述目的,采用如下技术方案:一种高性能太阳能电池组件,包括设置在第一层的超白玻璃层,设置在第二层的高透EVA胶膜层,设置在第三层的电池片层,设置在第四层的低导热EVA胶膜层,以及设置在第五层的导热背板层。
进一步的,所述低导热EVA胶膜层由如下质量百分比的各组份组成:EVA80%,ZnO母粒20%,过氧化物交联剂1.2-1.5%,抗老化剂1%,以及交联促进剂1%。
进一步的,所述导热背板层包括由上至下依次层叠的导热E膜,PET胶膜,以及PVDF胶膜。
进一步的,所述导热E膜的厚度为0.2mm,所述PET胶膜的厚度为0.2mm,所述PVDF胶膜的厚度为0.025mm。
进一步的,所述导热E膜由如下质量百分比的各组份组成:茂金属m-PE78%,ZnO母粒20%,以及抗老化剂2%。
本发明的有益效果:本发明在电池片层的下层设置了低导热EVA胶膜层,不仅让太阳能电池组件保持原有的性能,避免发生绝缘电阻下降,耐水性能降低,出现PID的现象。另外,本发明通过改善导热背板的结构,从而使得导热背板的导热系数由低至高,满足原有电池板的要求,又能解决散热、确保光能转化的效率。
附图说明
图1为本发明的结构示意图。
具体实施方式
图1所示,涉及一种高性能太阳能电池组件,包括设置在第一层的超白玻璃层1,设置在第二层的高透EVA胶膜层2,设置在第三层的电池片层3,设置在第四层的低导热EVA胶膜层4,以及设置在第五层的导热背板层5。
其中,所述低导热EVA胶膜层4由如下质量百分比的各组份组成:EVA 80%,ZnO母粒20%,过氧化物交联剂1.2-1.5%,抗老化剂1%,以及交联促进剂1%。
制造时,将上述各组分的物质经过混合均匀后,通过流延或压延工艺制膜,制得的低导热EVA胶膜层4的厚度在0.35-0.4mm之间。这样制得的低导热EVA胶膜层4的体积电阻率:1*1013~1*1014,吸水率:<0.02%,交联度:140℃18min75~85%,导热系数:0.6W/m*K。
上述低导热EVA胶膜层4是相对于纯EVA 0.32W/m*K和导热最好的EVA2.8W/m*K而言,在不影响EVA原有绝缘强度和耐水性提前下对EVA进行适当导热改性。
另外,所述导热背板层5是由0.2mm的导热E膜,0.2mm的PET胶膜,以及0.025mm的PVDF胶膜依次层叠。制造时,将导热E膜、PET胶膜和PVDF胶膜经过二次复合,在经60℃100小时老化处理即成导热背板。
其中,所述导热E膜由如下质量百分比的各组份组成:茂金属m-PE 78%,ZnO母粒20%,以及抗老化剂2%。制造时,按上述比例将茂金m-PE和处理过的ZnO母粒、以及抗老化剂混合均匀后,由105℃开练20min,开练好的材料经压延或流延成厚度0.2mm的导热E膜。这样制得的导热E膜的体积电阻1*1013~1*1014,耐水性<0.01%,导热系数1.0W/m*K。
另外,还需要对ZnO母粒进行活化处理;首先,选择直径1um以下的ZnO母粒40份,含10%NDZ40-1的醇溶液100份(四异丙基(二辛基亚磷酸酰氧基))钛酸酯。
工艺为:将上述ZnO母粒和含10%NDZ40-1的醇溶液升温60℃,然后充分搅拌混合20min,脱醇去水,真空干燥100℃/600mmHg 2小时,粉碎成原粒。成品活性氧化锌ZnO水含量<0.02%。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (5)
1.一种高性能太阳能电池组件,其特征在于,包括设置在第一层的超白玻璃层,设置在第二层的高透EVA胶膜层,设置在第三层的电池片层,设置在第四层的低导热EVA胶膜层,以及设置在第五层的导热背板层。
2.如权利要求1所述的太阳能电池组件,其特征在于,所述低导热EVA胶膜层由如下质量百分比的各组份组成:EVA 80%,ZnO母粒20%,过氧化物交联剂1.2-1.5%,抗老化剂1%,以及交联促进剂1%。
3.如权利要求2所述的太阳能电池组件,其特征在于,所述导热背板层包括由上至下依次层叠的导热E膜,PET胶膜,以及PVDF胶膜。
4.如权利要求3所述的太阳能电池组件,其特征在于,所述导热E膜的厚度为0.2mm,所述PET胶膜的厚度为0.2mm,所述PVDF胶膜的厚度为0.025mm。
5.如权利要求4所述的太阳能电池组件,其特征在于,所述导热E膜由如下质量百分比的各组份组成:茂金属m-PE 78%,ZnO母粒20%,以及抗老化剂2%。
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CN107046076A (zh) * | 2017-01-10 | 2017-08-15 | 成都聚立汇信科技有限公司 | 一种高性能光电转换模块 |
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CN102738275A (zh) * | 2011-04-12 | 2012-10-17 | 苏州尚善新材料科技有限公司 | 一种太阳能电池组件背板及其制备方法 |
CN202839683U (zh) * | 2012-09-06 | 2013-03-27 | 武汉日新科技股份有限公司 | 一种以蜂窝板为基材的新型光伏构件 |
CN102994010A (zh) * | 2012-12-07 | 2013-03-27 | 天威新能源控股有限公司 | 一种eva热熔胶封装材料及其制备方法 |
CN103360986A (zh) * | 2012-03-31 | 2013-10-23 | 江南大学 | 一种新型高导热太阳能组件封装材料 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102738275A (zh) * | 2011-04-12 | 2012-10-17 | 苏州尚善新材料科技有限公司 | 一种太阳能电池组件背板及其制备方法 |
CN103360986A (zh) * | 2012-03-31 | 2013-10-23 | 江南大学 | 一种新型高导热太阳能组件封装材料 |
CN102664208A (zh) * | 2012-05-09 | 2012-09-12 | 华东理工大学 | 一种增效散热太阳电池组件及其制备方法 |
CN202839683U (zh) * | 2012-09-06 | 2013-03-27 | 武汉日新科技股份有限公司 | 一种以蜂窝板为基材的新型光伏构件 |
CN102994010A (zh) * | 2012-12-07 | 2013-03-27 | 天威新能源控股有限公司 | 一种eva热熔胶封装材料及其制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107046076A (zh) * | 2017-01-10 | 2017-08-15 | 成都聚立汇信科技有限公司 | 一种高性能光电转换模块 |
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