CN104658916A - Preparation method of packaging bonding wire with surface layer and finished product thereof - Google Patents

Preparation method of packaging bonding wire with surface layer and finished product thereof Download PDF

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Publication number
CN104658916A
CN104658916A CN201410362538.7A CN201410362538A CN104658916A CN 104658916 A CN104658916 A CN 104658916A CN 201410362538 A CN201410362538 A CN 201410362538A CN 104658916 A CN104658916 A CN 104658916A
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China
Prior art keywords
core
epidermal area
oxidation layer
anti oxidation
bonding wire
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CN201410362538.7A
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Chinese (zh)
Inventor
吕宗鸿
赵健佑
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Taya Electric Wire & Cable Co ltd
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Taya Electric Wire & Cable Co ltd
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Priority claimed from TW103110804A external-priority patent/TWI525726B/en
Application filed by Taya Electric Wire & Cable Co ltd filed Critical Taya Electric Wire & Cable Co ltd
Publication of CN104658916A publication Critical patent/CN104658916A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43825—Plating, e.g. electroplating, electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/4516—Iron (Fe) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Wire Bonding (AREA)

Abstract

The invention provides a preparation method of a packaging bonding wire with a surface layer and a finished product thereof. The preparation method comprises the following steps: firstly, an eye die with a proper surface reduction rate is used for stretching a wire to process a base material to obtain a core material; electroplating on the core material to form an anti-oxidation layer, and forming a surface layer on the anti-oxidation layer; and heat treating the core material coated with the anti-oxidation layer and the skin layer to obtain the packaging bonding wire with the skin layer. According to the invention, because the wire extending processing is carried out firstly and then the electroplating process is carried out, the cracks formed on the surface of the core material due to the wire extending processing can be filled by the electroplating process, so that the oxidation resistant layer can be completely coated on the surface of the core material, and the surface layer can be completely coated on the surface of the oxidation resistant layer, thereby solving the problem that the quality of the semiconductor device is reduced due to the cracks formed on the oxidation resistant layer in the packaging bonding wire in the prior art.

Description

There is preparation method and the finished product thereof of the encapsulation bonding wire of epidermal area
Technical field
The present invention relates to semiconductor applications, espespecially a kind of preparation method and finished product thereof with the encapsulation bonding wire of epidermal area.
Background technology
For complying with semiconductor applications to product demands such as precise treatment, high-quality and low costs, the copper cash mostly selecting surface to be coated with anti oxidation layer now replaces gold thread and connects electronics, circuit unit, to encapsulate formation semiconductor device.
No. I287282nd, TaiWan, China patent announcement case discloses a kind of oxidation resistant copper cash, and this oxidation resistant copper cash is made up of the anti oxidation layer that the outer surface of copper cash and copper cash is coated, makes copper cash have being better than the electrical reliability of gold thread.
No. 578286th, TaiWan, China patent announcement also discloses a kind of tie line, it comprises with copper is the core of main component and the coating that is formed on core, and the material of coating is the oxidative resistance metal of fusing point higher than copper, utilizes coating to prevent the phenomenon of core generation surface oxidation.According to the preparation method that this section of patent discloses, it is prior to coating electroplated by core, then stretches line processing to core and coating formed thereon, obtains predetermined wire diameter and coating thickness to make tie line.But, due to stretch line processing be carry out again after coating is formed, therefore the surface being formed at the coating on core can form defect because stretching line processing, such as: slight crack, hole or peel off, and then deterioration comprises the quality of the semiconductor device of this kind of tie line, and its development toward precise treatment is restricted.
Therefore, technical field of semiconductor encapsulation personnel just actively improve the surface texture of the encapsulation bonding wire of prior art, to overcoming the problems referred to above.Such as, No. 200937546th, TaiWan, China patent publication discloses a kind of semiconductor device splice grafting line, and it comprises the core that is made up of conductive metal and to be formed on this core and its composition is different from the epidermal area of aforesaid conductive metal.This section of patent has face-centered cubic crystal structure by the metal ingredient of control table cortex and has the long side direction crystal orientation <111> of more than 50%, reduces epidermal area and produces the object of defect to reaching because stretching line processing.But Using such method prepares connecting line will improve process complexity and production cost; And just carry out stretching line processing because the epidermal area of this section of patent is also first formed on core, even if therefore the crystal structure of control table cortex and crystal orientation ratio, still cannot avoid the problem that the surface of epidermal area forms defect or slight crack because stretching line and processing completely.
Summary of the invention
Because the technological deficiency that prior art faces, one object of the present invention is the preparation method improveing encapsulation bonding wire, and the anti oxidation layer of encapsulation bonding wire and/or the surface of epidermal area that overcome prior art by this form the defect such as hole or slight crack because stretching line processing.
Another object of the present invention is to the quality promoting prior art encapsulation bonding wire, promote its stability being applied to semiconductor packaging process and workability.
For reaching aforementioned object, the invention provides a kind of preparation method with the encapsulation bonding wire of epidermal area, it comprises:
Mother metal is provided;
The multiple diamond eye mould of multiple eye mould draft between 7% to 9% is used to stretch line mother metal, to obtain core;
Core is placed in the first electroplate liquid, and plating forms anti oxidation layer on core, to obtain the core being coated with anti oxidation layer;
The core being coated with anti oxidation layer is placed in the second electroplate liquid, and plating forms epidermal area on the core being coated with anti oxidation layer, to obtain the core being coated with anti oxidation layer and epidermal area; And
The core of anti oxidation layer and epidermal area is coated with, the obtained encapsulation bonding wire with epidermal area with the heat-treated of 400 DEG C to 800 DEG C.
The preparation method due to the present invention with the encapsulation bonding wire of epidermal area is the technique of first carrying out electroplating anti oxidation layer and epidermal area through the processing of hyperextension line again, suitable annealing temperature of simultaneously arranging in pairs or groups is heat-treated, therefore galvanizer's artistic skill is conducive to filling up the slight crack or the hole that are formed at core surfaces because stretching line processing, guarantee that anti oxidation layer energy complete packet is overlying on core surfaces, to promote the profile pattern of anti oxidation layer; And the epidermal area be formed on anti oxidation layer can promote the obtained quality with the encapsulation bonding wire of epidermal area further, improves its workability being applied to semiconductor packaging process and stability.
Preferably, the step that the core that the aforementioned heat-treated with 400 DEG C to 800 DEG C is coated with anti oxidation layer and epidermal area obtains the encapsulation bonding wire with epidermal area comprises: in being connected with 10 liters/min (L/min) in the nitrogen environment of 15 liters/min (L/min), the core of anti oxidation layer and epidermal area is coated with, the obtained encapsulation bonding wire with epidermal area with the heat-treated of 400 DEG C to 800 DEG C.Accordingly, preparation method can guarantee the uniformity of heat treatment temperature, and then the quality with the encapsulation bonding wire of epidermal area obtained by promoting.
Preferably, the multiple diamond eye mould of aforementioned use eye mould draft between 7% to 9% is stretched line mother metal and is comprised with the step system obtaining core: with 100 to 200 ms/min stretch wire rate, the multiple diamond eye mould of eye mould draft between 7% to 9% is used to stretch line mother metal, to obtain core.
Better, use the multiple diamond eye mould of eye mould draft between 7% to 9% to stretch line mother metal to obtain core with the wire rate of stretching of 100 to 150 ms/min, its more specifically step comprise:
With 100 to 150 ms/min stretch wire rate, use draft between 7% to 9% multiple diamond eye mould stretch line mother metal, with obtain through stretch line processing mother metal; And
With 100 ms/min to 150 ms/min stretch wire rate, use the outlet multiple diamond eye mould of eye mould aperture value between 15 microns to 50 microns to stretch line through stretching the mother metal of line processing, to obtain core.Accordingly, core has the wire diameter between 15 microns to 50 microns.
Preferably, the outlet eye mould aperture value of multiple diamond eye mould is between 15 to 50 microns, and the core obtained by order has the wire diameter between 15 to 50 microns.
Preferably, aforementionedly core is placed in the first electroplate liquid and plating forms anti oxidation layer and comprises to obtain the step being coated with the core of anti oxidation layer on core:
Core is placed in the first electroplate liquid; And
With the electric current more than 0.02 ampere (A), the production linear speed of 30 to 50 ms/min, on core, plating forms anti oxidation layer, to obtain the core being coated with anti oxidation layer.
Better, preparation method comprises electroplating on core with the electric current of 0.02 ampere to 0.3 ampere and forms anti oxidation layer, to obtain the core being coated with anti oxidation layer.
Preferably, aforementioned the core being coated with anti oxidation layer is placed in the second electroplate liquid and on the core being coated with anti oxidation layer plating formed epidermal area, comprise with the step obtaining the core being coated with anti oxidation layer and epidermal area:
Core is placed in the second electroplate liquid; And
With more than 0.002 ampere electric current, the production linear speed of 30 to 50 ms/min, on the core being coated with anti oxidation layer, plating forms epidermal area, to obtain the core being coated with anti oxidation layer and epidermal area.
Better, preparation method comprises electroplating on the core being coated with anti oxidation layer with the electric current of 0.002 ampere to 0.020 ampere and forms epidermal area, to obtain the core being coated with anti oxidation layer and epidermal area.Better again, plating forms the electric current of epidermal area between 0.002 ampere to 0.010 ampere.
Accordingly, the cost of manufacture utilizing galvanoplastic sequentially to form anti oxidation layer and epidermal area on core to be conducive to reducing the encapsulation bonding wire with epidermal area, promotes the utilance of the second electroplate liquid simultaneously, and reduces energy loss.
Preferably, the first electroplate liquid is the aqueous solution containing the first metal ion, and the first metal ion can be palladium ion, and the concentration of the first metal ion of the first electroplate liquid is between 2 grams per liter to 4 grams per liters; Second electroplate liquid is the aqueous solution containing the second metal ion, and the second electroplate liquid can contain gold ion, silver ion, platinum ion or its combination, and the concentration of the second metal ion of the second electroplate liquid is between 0.2 grams per liter to 2 grams per liter.Accordingly, the finished product obtained by preparation method via the present invention with the encapsulation bonding wire of epidermal area comprises plating porpezite bonding wire, plating palladium-silver bonding wire or plating palladium platinum bonding wire, and these encapsulation bonding wires can have careful and crackless surface.
Preferably, the wire diameter of mother metal is between 50 to 200 microns.
For reaching aforementioned object, the present invention separately provides a kind of encapsulation bonding wire with epidermal area, it is obtained by preparation method as the aforementioned, and the encapsulation bonding wire with epidermal area comprises core, is coated on the anti oxidation layer of core surfaces and is coated on the epidermal area on anti oxidation layer surface, wherein have the extensibility of the encapsulation bonding wire of epidermal area between 4% to 19%, pull-off force is between 3gf to 48gf.
Accordingly, the encapsulation bonding wire that the present invention has epidermal area more can be applicable to semiconductor packaging process, and then the encapsulation bonding wire that lifting utilizes the present invention to have epidermal area carries out the production qualification rate of semiconductor packaging process and comprises its semiconductor device quality, makes it more meet precise treatment product demand.
Preferably, the bracing wire intensity with the encapsulation bonding wire of epidermal area can meet the specification being greater than more than 4gf, the intensity of pushing the ball with the encapsulation bonding wire of epidermal area can meet the specification being greater than more than 7gf, and the bracing wire intensity with the second solder joint of the encapsulation bonding wire of epidermal area also meets the specification being greater than more than 2gf.Therefore the encapsulation bonding wire that the present invention has epidermal area can have preferably quality.
Preferably, there is the yield strength of the encapsulation bonding wire of epidermal area higher than more than 100MPa.
Preferably, the technological ability index (CPK) with the encapsulation bonding wire of epidermal area all meets the specification being greater than more than 2, or even up between 3 to 6.Accordingly, the encapsulation bonding wire with epidermal area can have preferably stability when being applied to semiconductor packaging process.
Preferably, the integral hardness of the balling (free air ball, FAB) that the encapsulation bonding wire with epidermal area is formed is between 59 to 63HV; Anti oxidation layer and the epidermal area complete packet with the encapsulation bonding wire of epidermal area are overlying on core surfaces, therefore can be reduced in semiconductor packaging process the situation occurring to rupture, and promote simultaneously and have the encapsulation bonding wire of epidermal area and the adaptation of chip electrode and bond strength.
Preferably, the thickness of anti oxidation layer is between 60 to 160 nanometers.
Preferably, have the encapsulation bonding wire of epidermal area for benchmark with entirety, the content of anti oxidation layer material is between 1 percentage by weight to 5 percentage by weight; Better, have the encapsulation bonding wire of epidermal area for benchmark with entirety, the content of anti oxidation layer material is between 1 percentage by weight to 3 percentage by weight.
Preferably, have the encapsulation bonding wire of epidermal area for benchmark with entirety, the content of skin layer material is between 0.05 percentage by weight to 0.5 percentage by weight.
Better, have the encapsulation bonding wire of epidermal area for benchmark with entirety, the content of skin layer material is between 0.05 percentage by weight to 0.4 percentage by weight, and the encapsulation bonding wire with epidermal area obtained by order has higher technological ability index.
Preferably, mother metal and core contain the single crystal Cu or oxygen-free copper that are equal to or greater than more than 99.99 percentage by weights (high purity is equal to or greater than more than 4N); Better, core contains the single crystal Cu being equal to or greater than more than 99.9999 percentage by weights (high purity is equal to or greater than more than 6N).In addition, core comprises silver, iron, manganese, arsenic, phosphorus, Calcium Magnesium Sulphur or its combination further, and the content of these compositions is at least greater than 0ppm and is less than or equal to 5ppm.
Preferably, the material of anti oxidation layer is palladium.
Preferably, the material of epidermal area comprises gold, silver or platinum; Better, the material of epidermal area is gold.
In sum, the present invention has the preparation method of the encapsulation bonding wire of epidermal area by improvement, can not only avoid stretching the surface that line processes deteriorated anti oxidation layer and/or epidermal area, more can contribute to filling up via electroplating technology the slight crack or hole that are formed at core surfaces, anti oxidation layer energy complete packet is made to be overlying on core surfaces, epidermal area energy complete packet is overlying on anti oxidation layer surface, and promote the profile pattern of anti oxidation layer and epidermal area simultaneously, the encapsulation bonding wire with epidermal area obtained by order has suitable extensibility and pull-off force, even promote the production acceptance rate that it is applied to semiconductor packaging process.
Accompanying drawing explanation
The metallomicroscope striograph of balling (free air ball, FAB) of Fig. 1 for being formed by the plating porpezite bonding wire of embodiment 4.
The metallomicroscope striograph of the FAB that Fig. 2 is formed for the plating porpezite bonding wire sold by Tanaka Co., Ltd. (TANAKA).
Embodiment
Below, by following specific embodiment, embodiment of the present invention will be described, those skilled in the art can understand via this description the advantage and effect that the present invention can reach easily, and under not deviating from spirit of the present invention, carry out various modification and change, to implement or to apply content of the present invention.
Embodiment 1 to 10 has preparation method and the finished product thereof of the encapsulation bonding wire of epidermal area
Embodiment 1 to 10 haply via the preparation method of encapsulation bonding wire such as what follows with epidermal area, the plating porpezite bonding wire of obtained embodiment 1 to 10.
First, prepare wire diameter between the mother metal of 160 microns, the principal component of mother metal is the oxygen-free copper of more than purity 4N [more than 99.99 percentage by weights (wt%)], separately containing metal impurities 0.01 percentage by weights such as iron, manganese, arsenic.
Then, wire rate is stretched with 100 to 150 ms/min (m/min), use multiple eye mould draft between 7% to 9% multiple diamond eye mould, repeat multiple tracks and stretch Wiring technology, to obtain the mother metal through stretching line processing, stretch the aforementioned mother metal through stretching line processing of line to export the multiple diamond eye mould of eye mould aperture value between 15 microns to 50 microns again, making aforementioned high-purity mother metal stretch line to wire diameter is core between 15 microns to 50 microns.
Afterwards, core is cleaned in the ultrasonic electrolytic degreasing mode that involves; Being placed on concentration is again that 2 grams per liters (g/L) are in the palladium electroplating liquid of 4 grams per liters (g/L), and with the electric current of more than 0.02 ampere, the production linear speed of 30 to 50 ms/min, on core, plating forms the anti oxidation layer of thickness between 60 nanometer to 160 nanometers, to obtain the core that surface is formed with anti oxidation layer; Being placed on concentration is again in the gold plating bath of 0.2 grams per liter to 2 grams per liter, with the electric current of more than 0.002 ampere, the production linear speed of 30 to 50 ms/min, on anti oxidation layer, plating forms the epidermal area that content is 0.05 to 0.5 percentage by weight, to obtain the core that surface is formed with anti oxidation layer and epidermal area.In embodiment 1 to 10, anti oxidation layer is palladium layers, and epidermal area is layer gold.
Then, the core of anti oxidation layer and epidermal area is formed with ultrasonic wave mode clean surface, and take more than purity 4N (more than 99.99 percentage), gas flow as the nitrogen of 10 liters/min to 15 liters/min, the gold plating bath residuing in epidermal area surface is dried up.
Finally, in continuing to be connected with in the nitrogen environment of 10 liters/min to 15 liters/min, with the annealing temperature of 400 DEG C to 800 DEG C, utilizing the heat treatment of infrared heat conduction pattern to have the core of anti oxidation layer and epidermal area, the encapsulation bonding wire with epidermal area can be obtained.In this, the encapsulation bonding wire with epidermal area obtained by each embodiment is plating porpezite bonding wire.
According to above-mentioned preparation method, outlet eye mould aperture value (finally stretching Wiring technology together) of the multiple diamond eye mould set by each embodiment, stretch wire rate, palladium layers produces linear speed, palladium layers electroplating current, that layer gold produces the technological parameters such as linear speed, layer gold electroplating current and annealing temperature is as shown in table 1 below; And each embodiment is as shown in table 2 below through the core wire diameter specification of the plating palladium bonding wire of the plating porpezite bonding wire thus obtained by technological parameter and comparative example, palladium layers thickness, gold content, extensibility and pull-off force.
In this, the plating porpezite bonding wire of embodiment 1 to 10 is with cupping machine (label: Instron, model: 5543) carry out extension test, the standard bracing wire length 25.4cm of another setting cupping machine, according to each embodiment setting wire range 15 to 50 μm, record extensibility and the pull-off force analysis result of the plating porpezite bonding wire of each embodiment.
Table 1: the plating porpezite bonding wire of preparation obtained by embodiment 1 to 10 and the technological parameter set by plating palladium bonding wire obtained by comparative example 1
Table 2: the core wire diameter of the plating porpezite bonding wire obtained by embodiment 1 to 10 and the plating palladium bonding wire obtained by comparative example 1, palladium layers thickness, gold content, extensibility and pull-off force
As above shown in table 2, via aforementioned plating porpezite bonding wire preparation method obtained by finished product, its extensibility all can between 4% to 19%, and its pull-off force is all between 3gf to 48gf, and the preparation method of display plating porpezite bonding wire can obtain the welding wire being suitable for semiconductor packages smoothly.
This experiment is another with the surface of the plating porpezite bonding wire of each embodiment of metallography microscope sem observation, confirming the preparation method via the plating porpezite bonding wire described in above-described embodiment, the anti oxidation layer of obtained plating porpezite bonding wire surface being avoided completely to produce defect or slight crack because stretching line processing.
Comparative example 1 is not formed with preparation method and the finished product thereof of the encapsulation bonding wire of epidermal area
Prepare as previous embodiment high-purity mother metal used; And with 100 ms/min stretch wire rate, use multiple eye mould draft between 7% to 9% multiple diamond eye mould, repeat multiple tracks and stretch Wiring technology, to obtain through stretching line processing mother metal, to export eye mould aperture value, to be that the multiple diamond eye mould of 18 microns stretches line aforementioned through stretching line processing mother metal again, make aforementioned high-purity mother metal stretch core that line to wire diameter is 18 microns.
Then, core is cleaned in the ultrasonic electrolytic degreasing mode that involves; Being placed on concentration is again in the palladium electroplating liquid of 2 to 4g/L, and with the electric current of 0.068A, the production linear speed of 30 ms/min, on core, plating forms thickness between the anti oxidation layer of 60 nanometer to 100 nanometers, is formed with anti oxidation layer core to obtain surface.In this comparative example, anti oxidation layer is palladium layers.
Then, the core that electrolytic degreasing mode clean surface is formed with anti oxidation layer is involved with ultrasonic, and take more than purity 4N (more than 99.99 percentage), gas flow as the nitrogen of 10 liters/min to 15 liters/min, the palladium electroplating liquid residuing in anti oxidation layer surface is dried up.
Finally, in continuing to be connected with in the nitrogen environment of 10 liters/min to 15 liters/min, with the annealing temperature of 500 DEG C, utilizing the heat treatment of infrared heat conduction pattern to have the core of anti oxidation layer, namely completing the making that this comparative example is not formed with the encapsulation bonding wire of epidermal area.In this, the encapsulation bonding wire not being formed with epidermal area obtained by this comparative example is plating palladium bonding wire.
In this, the outlet eye mould aperture value of the multiple diamond eye mould set by this comparative example, stretch wire rate, palladium layers produces linear speed, palladium layers electroplating current, layer gold produce the technological parameters such as linear speed, layer gold electroplating current and annealing temperature as shown in Table 1; And this comparative example is not formed with the encapsulation bonding wire of epidermal area for plating palladium bonding wire, its core wire diameter specification, palladium layers thickness, gold content, extensibility and pull-off force are also as above shown in table 2.
Test example 1 plates the quality of porpezite bonding wire
Consider that semiconductor device is to precise treatment product demand, this experiment selects wire diameter to be all the plating porpezite bonding wire of the embodiment 2 of 17 microns and embodiment 3 representatively, use push-pull effort tester (label: Dage, model: Series4000) to measure aforementioned two kinds of bracing wires (wire pull) with the encapsulation bonding wire of epidermal area, the bracing wire intensity of push the ball (ball shear) and the second solder joint, to assess the encapsulation bonding wire quality with epidermal area.
In this test example, plating porpezite bonding wire to be measured uses automatic bonding equipment (label: K & S, model: Maxum-Plus), balling (free air ball, FAB) is formed with the encapsulation bonding wire front end that arc discharge method has epidermal area; And for promoting the confidence level of measurement result, the each self-forming of plating porpezite bonding wire 30 sphere diameters of embodiment 2 and embodiment 3 are the ball size of 33 to 35 microns, to test the maximum of the bracing wire intensity of the bracing wire intensity of its grade, intensity of pushing the ball and the second solder joint, minimum value, mean value and technological ability index, its measurement result is as shown in table 3 below.
Table 3: the maximum of the bracing wire intensity of the bracing wire intensity of the plating porpezite bonding wire of embodiment 2 and 3, intensity of pushing the ball and the second solder joint, minimum value and mean value and technological ability index
As above shown in table 3, the bracing wire intensity of the plating porpezite bonding wire of embodiment 2 and 3, the bracing wire intensity of intensity of pushing the ball and the second solder joint all meets and is greater than more than 4gf, the specification of more than 7gf and more than 2gf, the situation ruptured not only not easily is there is in display when carrying out bracing wire technique via the plating porpezite bonding wire obtained by aforementioned preparation process, its second solder joint more can form good bond strength with chip electrode, guarantee that the FAB that electric discharge burning ball is formed can intactly be engaged on welded gasket simultaneously, ball-type solder joint is avoided to offset, deformity or to be formed with golf spherical (namely, ball-type solder joint central point is positioned at outside plating palladium bonding wire) outward appearance.
Moreover, the bracing wire intensity of the bracing wire intensity of the plating porpezite bonding wire of embodiment 2 and embodiment 3, intensity of pushing the ball and the second solder joint is all controlled in certain scope, therefore bracing wire intensity can be made, the bracing wire intensity of intensity of pushing the ball and the second solder joint obtains the CPK being greater than 3, and then promotes quality and the stability of plating porpezite bonding wire.
Test example 2 epidermal area is on the impact of its encapsulation bonding wire quality
Consider that semiconductor device is to precise treatment product demand, this test example, via the method as afore-mentioned test example 1, is analyzed wire diameter and is all the plating porpezite bonding wire of the embodiment 4 of 18 microns and the plating palladium bonding wire of comparative example 1; And for promoting the confidence level of measurement result, the plating porpezite bonding wire of embodiment 4 and each self-forming of plating palladium bonding wire 30 sphere diameters of comparative example 1 are the soldered ball size of 33 to 35 microns, to assess with or without forming the impact of epidermal area on its encapsulation bonding wire quality.The measurement result of aforementioned two kinds of encapsulation bonding wires is as shown in table 4 below.
Table 4: the maximum of the bracing wire intensity of the plating porpezite bonding wire of embodiment 4 and the plating palladium bonding wire of comparative example 1, intensity of pushing the ball and the second solder joint bracing wire intensity, minimum value and mean value and technological ability index
As above shown in table 4, the experimental result of the plating porpezite bonding wire of comparison embodiment 4 and the plating palladium bonding wire of comparative example 1 is known, the plating porpezite bonding wire of embodiment 4 can have the bracing wire intensity of plating palladium bonding wire and the bracing wire intensity of the second solder joint that are better than comparative example 1, to be shown on anti oxidation layer to form epidermal area further and more can be conducive to reducing the encapsulation with epidermal area and be wired in semiconductor packaging process the situation occurring to rupture; And the plating porpezite bonding wire of embodiment 4 more can have the intensity of pushing the ball of the plating palladium bonding wire being better than comparative example 1, guarantee that formed soldered ball can intactly be engaged on welded gasket by this.
In addition, the experimental result of the plating porpezite bonding wire of comparison embodiment 4 and the plating palladium bonding wire of comparative example 1 is known, the bracing wire intensity of the bracing wire intensity of the plating porpezite bonding wire of embodiment 4, intensity of pushing the ball and the second solder joint is all controlled in certain scope, therefore can guarantee that its CPK all meets the specification being greater than 2, or even be greater than more than 3; Review the plating palladium bonding wire of comparative example 1, because its bracing wire intensity is comparatively large with the deviation of intensity of pushing the ball, cause its CPK only about 2.14 and 2.29.Accordingly, verify via above-mentioned comparison result, by changing the preparation method of plating porpezite bonding wire, and forming epidermal area again on anti oxidation layer, can be conducive to promoting quality and stability that the encapsulation bonding wire with epidermal area is applied to semiconductor packaging process.
Test example 3 has the quality of the encapsulation bonding wire of epidermal area
This test example, via the method as afore-mentioned test example 1, is analyzed wire diameter and is all the plating porpezite bonding wire (marque is CLR-1A) that the plating porpezite bonding wire of the embodiment 4 of 18 microns and Tanaka Co., Ltd. sell; And for promoting the confidence level of measurement result, the each self-forming of plating porpezite bonding wire 30 sphere diameters that embodiment 4 and Tanaka Co., Ltd. sell are the soldered ball size of 33 to 35 microns, respectively have the quality of the encapsulation bonding wire of epidermal area with assessment, its measurement result is as shown in table 5 below.
Table 5: the maximum of the bracing wire intensity of the bracing wire intensity of the plating porpezite bonding wire that embodiment 4 and Tanaka Co., Ltd. sell, intensity of pushing the ball and the second solder joint, minimum value and mean value and technological ability index
As above shown in table 5, no matter though the plating porpezite bonding wire sold of the plating porpezite bonding wire of embodiment 4 and Tanaka Co., Ltd. all can meet with regard to the bracing wire intensity of bracing wire intensity, intensity of pushing the ball, the second solder joint the specification being greater than more than 4gf, more than 7gf and more than 2gf; But the bracing wire intensity of the second solder joint of the plating porpezite bonding wire that Tanaka Co., Ltd. sells has significant deviation, causes its CPK only to have 0.99, obviously violate the specification that CPK need be greater than 2; Review the plating porpezite bonding wire of embodiment 4, the bracing wire intensity of its bracing wire intensity, intensity of pushing the ball, the second solder joint all can be controlled in certain scope, therefore can guarantee that CPK meets the specification being greater than more than 2, even its CPK can be promoted and reach between 3 to 5.
Verify via above-mentioned comparison result, specifically can solve via the encapsulation bonding wire with epidermal area obtained by preparation method of the present invention surface market encapsulating bonding wire and easily form the problem such as defect or slight crack, promote quality and the stability that the encapsulation bonding wire with epidermal area is applied to semiconductor packaging process further by this.
Test example 4 hardness
This test example is via the method as afore-mentioned test example 1, and the front end being all the plating porpezite bonding wire (marque is CLR-1A) that the plating porpezite bonding wire of the embodiment 4 of 18 microns and Tanaka Co., Ltd. sell in wire diameter forms the soldered ball size that sphere diameter is 33 to 35 microns respectively; Re-use the Vickers hardness (Vickers hardness (HV)) that hardness tester (label: Future-Tech, model: FM-800) measures the FAB of each plating porpezite bonding wire.
Refer to shown in Fig. 1 and Fig. 2, this test example gets 4 points (in upper reference numerals 1,3,4 and 5 place of figure) in the periphery of each FAB, 1 point (in upper reference numerals 2 place of figure) is got at each FAB center, measure the hardness level at its FAB periphery and center, its measurement result is as shown in table 6 below.
Table 6: the Hardness Measurement Results of the FAB that the plating porpezite bonding wire sold by embodiment 4 and Tanaka Co., Ltd. is formed
As above shown in table 6, the plating porpezite bonding wire sold due to Tanaka Co., Ltd. carries out stretching line machining again obtain by first electroplating anti oxidation layer and epidermal area, therefore the surface texture of anti oxidation layer and epidermal area and quality are subject to stretch impact that line processes and cannot complete coated core surfaces, the integral hardness of the FAB causing the plating porpezite bonding wire sold by Tanaka Co., Ltd. to be formed is all higher than 63HV, therefore the plating porpezite that Tanaka Co., Ltd. sells to be wired in packaging technology and comparatively easily fracture to occur and the not good problem of adaptation.
Review the plating porpezite bonding wire of embodiment 4, no matter the hardness of the FAB that the FAB that formed of plating porpezite bonding wire is peripheral or core rigidities is all formed lower than the plating porpezite bonding wire of Tanaka Co., Ltd..Accordingly, confirm via experimental result, utilize aforementioned preparation process can guarantee the obtained surface texture with the encapsulation bonding wire of epidermal area and quality, more can be conducive to the workability promoting the encapsulation bonding wire with epidermal area, maintain the stability with the bank needed for encapsulation bonding wire of epidermal area simultaneously.
Above-described embodiment is citing for convenience of description only, and the interest field that the present invention advocates is not limited only to above-described embodiment.

Claims (20)

1. have a preparation method for the encapsulation bonding wire of epidermal area, it comprises:
Mother metal is provided;
Use eye mould draft be 7% to 9% multiple diamond eye mould stretch line mother metal, to obtain core;
Core is placed in the first electroplate liquid, and plating forms anti oxidation layer on core, to obtain the core being coated with anti oxidation layer;
The core being coated with anti oxidation layer is placed in the second electroplate liquid, and plating forms epidermal area on the core being coated with anti oxidation layer, to obtain the core being coated with anti oxidation layer and epidermal area; And
The core of anti oxidation layer and epidermal area is coated with, the obtained encapsulation bonding wire with epidermal area with the heat-treated of 400 DEG C to 800 DEG C.
2. preparation method according to claim 1, the step that the core being wherein coated with anti oxidation layer and epidermal area with the heat-treated of 400 DEG C to 800 DEG C obtains the encapsulation bonding wire with epidermal area comprises:
In being connected with in the nitrogen environment of 10 liters/min to 15 liters/min, be coated with the core of anti oxidation layer and epidermal area with the heat-treated of 400 DEG C to 800 DEG C, the obtained encapsulation bonding wire with epidermal area.
3. preparation method according to claim 1, wherein use eye mould draft be 7% to 9% multiple diamond eye mould stretch line mother metal and comprise with the step obtaining core: with 100 to 150 ms/min stretch wire rate, use eye mould draft be 7% to 9% multiple diamond eye mould stretch line mother metal, to obtain core.
4. preparation method according to claim 3, wherein with 100 to 150 ms/min stretch wire rate use eye mould draft be 7% to 9% multiple diamond eye mould stretch line mother metal and comprise with the step obtaining core:
With 100 to 150 ms/min stretch wire rate, use draft be 7% to 9% eye mould stretch line mother metal, with obtain through stretch line processing mother metal; And
With 100 to 150 ms/min stretch wire rate, use outlet eye mould aperture value to be that the multiple diamond eye mould of 15 microns to 50 microns stretches line through stretching the mother metal of line processing, to obtain core.
5. preparation method according to claim 1, is wherein placed in the first electroplate liquid by core and plating forms anti oxidation layer and comprises to obtain the step being coated with the core of anti oxidation layer on core:
Core is placed in the first electroplate liquid; And
With the electric current of more than 0.02 ampere, the production linear speed of 30 to 50 ms/min, on core, plating forms anti oxidation layer, to obtain the core being coated with anti oxidation layer.
6. preparation method according to claim 5, wherein the first electroplate liquid is the aqueous solution containing the first metal ion, and the first metal ion is palladium ion.
7. preparation method according to claim 6, wherein the concentration of the first metal ion of the first electroplate liquid is 2 grams per liter to 4 grams per liters.
8. preparation method according to claim 1, is wherein placed in the second electroplate liquid by the core being coated with anti oxidation layer and plating forms epidermal area on the core being coated with anti oxidation layer, comprises with the step obtaining the core being coated with anti oxidation layer and epidermal area:
The core being coated with anti oxidation layer is placed in the second electroplate liquid; And
With the electric current of more than 0.002 ampere, the production linear speed of 30 to 50 ms/min, on the core being coated with anti oxidation layer, plating forms epidermal area, to obtain the core being coated with anti oxidation layer and epidermal area.
9. preparation method according to claim 8, wherein the second electroplate liquid is the aqueous solution containing the second metal ion, and the second metal ion is gold ion, silver ion, platinum ion or its combination.
10. preparation method according to claim 9, wherein the concentration of the second metal ion of the second electroplate liquid is 0.2 grams per liter to 2 grams per liter.
11. preparation methods according to any one of claim 1 to 10, wherein the wire diameter of mother metal is 50 to 200 microns.
12. preparation methods according to any one of claim 1 to 10, wherein core contains single crystal Cu or the oxygen-free copper of more than 99.99 percentage by weights.
13. preparation methods according to claim 12, wherein core comprises silver, iron, manganese, arsenic, phosphorus, Calcium Magnesium Sulphur or its combination further.
14. 1 kinds of encapsulation bonding wires with epidermal area, it is obtained by the preparation method according to any one of claim 1 to 13, and the encapsulation bonding wire with epidermal area comprises core, is coated on the anti oxidation layer of core surfaces and is coated on the epidermal area on anti oxidation layer surface, the extensibility wherein with the encapsulation bonding wire of epidermal area is 4% to 19%, and pull-off force is 3gf to 48gf.
The 15. encapsulation bonding wires with epidermal area according to claim 14, wherein the thickness of anti oxidation layer is 60 to 160 nanometers.
The 16. encapsulation bonding wires with epidermal area according to claim 15, wherein have the encapsulation bonding wire of epidermal area for benchmark with entirety, and the content of the material of anti oxidation layer is 1 percentage by weight to 5 percentage by weight.
The 17. encapsulation bonding wires with epidermal area according to claim 14, the wire diameter wherein with the core of the encapsulation bonding wire of epidermal area is 15 to 50 microns.
The 18. encapsulation bonding wires with epidermal area according to claim 16, wherein the material of anti oxidation layer comprises palladium.
19. according to claim 14 to the encapsulation bonding wire with epidermal area according to any one of 18, wherein has the encapsulation bonding wire of epidermal area for benchmark with entirety, and the content of the material of epidermal area is 0.05 percentage by weight to 0.5 percentage by weight.
The 20. encapsulation bonding wires with epidermal area according to claim 19, wherein the material of epidermal area comprises gold, silver, platinum or its combination.
CN201410362538.7A 2013-11-25 2014-07-28 Preparation method of packaging bonding wire with surface layer and finished product thereof Pending CN104658916A (en)

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US20040014266A1 (en) * 2000-09-18 2004-01-22 Tomohiro Uno Bonding wire for semiconductor and method of manufacturing the bonding wire
CN102422404A (en) * 2009-07-30 2012-04-18 新日铁高新材料株式会社 Bonding wire for semiconductor
TWM466108U (en) * 2013-07-26 2013-11-21 Feng Ching Metal Corp Bonding wire for semiconductor

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Publication number Priority date Publication date Assignee Title
US20040014266A1 (en) * 2000-09-18 2004-01-22 Tomohiro Uno Bonding wire for semiconductor and method of manufacturing the bonding wire
CN102422404A (en) * 2009-07-30 2012-04-18 新日铁高新材料株式会社 Bonding wire for semiconductor
TWM466108U (en) * 2013-07-26 2013-11-21 Feng Ching Metal Corp Bonding wire for semiconductor

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CN113005438A (en) * 2021-02-23 2021-06-22 广东工业大学 Method for using silver ion accelerator as additive for improving palladium plating rate in chemical palladium plating solution
CN113005438B (en) * 2021-02-23 2023-08-22 广东工业大学 Method for using silver ion accelerator as additive for improving palladium plating rate in chemical palladium plating solution

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Application publication date: 20150527