CN104658828A - Grid control carbon nano tube/carbon fiber field emission array cathode and production method thereof - Google Patents
Grid control carbon nano tube/carbon fiber field emission array cathode and production method thereof Download PDFInfo
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- CN104658828A CN104658828A CN201310599290.1A CN201310599290A CN104658828A CN 104658828 A CN104658828 A CN 104658828A CN 201310599290 A CN201310599290 A CN 201310599290A CN 104658828 A CN104658828 A CN 104658828A
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- carbon nano
- nano tube
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- tube
- carbon fiber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
The invention discloses a grid control carbon nano tube/carbon fiber field emission array cathode and a production method of the cathode and belongs to the field of vacuum micro electronics. The cathode comprises a conductive substrate, wherein an insulation layer is deposited on the substrate; a metal conductive layer is arranged on the insulation layer; an array circular hole control grid is formed by penetrating through the insulation layer on a layer surface; and an upright carbon nano tube/carbon fiber grows at a position point, where a catalyst is located, on a circular hole center substrate surface till reaching the center height of the control grid on the metal conductive layer. The production method of the cathode is carried out according to six steps sequentially. The method can grow a thin and high carbon nano tube with a large depth-width ratio; the formed field emission cathode is stable in emission; the chemical stability of the carbon nano tube is better than that of a metal, the carbon nano tube has small influence from a working environment and low threshold voltage, and a manufacturing technology and equipment of the carbon nano tube are relatively simple, so that the production cost can be greatly lowered.
Description
Technical field
The invention belongs to microelectronic vacuum field, particularly a kind of grid-control carbon nano-tube/carbon fiber field emitter arrays and its manufacture method.
Background technology
In vacuum microelectronic device, field emissive cathode, especially carbon nano-tube or carbon fiber field emissive cathode great majority all do not have control gate, during manufacture, carbon nano-tube is deposited directly in cathode substrate, or by silk screen print method, carbon nanotube dust is coated in cathode substrate, owing to there is no control gate, the practical application of this negative electrode is subject to great restriction, row as, in display tube, often need separately to do grid.For the cold cathode be applied in the fields such as flat panel display device (FED), at present comparatively ripe is Spindt field emitter arrays with grid, but the transmitting pointed cone of Spindt field emitter arrays is metal material Mo, it not carbon nano-tube, Mo is very responsive for operational environment, the gas of adsorption or other polluters can cause the change of transmitting and decline so that lost efficacy, in addition Spindt field emitter arrays, when particularly area is larger, very high to the requirement of manufacturing equipment, production cost is also very high.The present invention is further use in order to solve field emitter arrays and the research project be engaged in.In development of the present invention, utilize Micrometer-Nanometer Processing Technology thin film technique, the cathode emitter of control gate and carbon nano-tube or carbon fiber formation is made an assembly, this field emitter arrays with grid is more affected by environment than Spindt field emitter arrays little, launch stability is high, manufacturing process and equipment needed thereby are all fairly simple, easily meet instructions for use.
Summary of the invention
The technical issues that need to address of the present invention are, all do not have this defect of control gate for existing carbon nano-tube or carbon fiber field-transmitting cathode great majority, what experimental study make use of that Micrometer-Nanometer Processing Technology and thin film technique produce a kind ofly has extensive use and with the carbon nano-tube/carbon fiber field emitter arrays of control gate.The present invention realizes by the following technical solutions, a kind of grid-control carbon nano-tube/carbon fiber field emitter arrays, comprise one piece of electrically-conductive backing plate as negative electrode, substrate deposits insulating barrier, described insulating barrier has layer of metal conductive layer, in aspect, array circular hole control gate is formed through insulating barrier, it is characterized in that, location point residing for center of circular hole catalyst grows upright carbon nano-tube, and its growing height can arrive the position at control gate center on metal conducting layer always; Described electrically-conductive backing plate can be silicon chip, metal substrate; Deposit glass or other insulating material of conductive layer; Remove
outward, also can use
, the metal conducting layer that its face deposits again can be Mo, Cu, Cr, Ni, Ti; A kind of grid-control carbon nano-tube/carbon fiber field emitter arrays and preparation method thereof, electrically-conductive backing plate deposits a layer insulating, deposit layer of metal conductive layer on the insulating layer, metal film carves hole array, through metal film pitting corrosion insulating barrier, form hole array, it is characterized in that, deposit a layer insulating described in A. between 0.3 μm-30 μm; B. the layer of metal conductive layer of described deposition, its thickness is between 0.1 μm-0.5 μm; C. described hole array, its aperture is 0.3 μm-30 μm, centre distance 3 μm-100 μm; D. at array surface inclination angle, hole deposition of sacrificial layer Al, Cu, be inclined to 5-45 DEG C with base plan, substrate rotates and hole is contracted to 0.05 μm-1.0 μm; E. through catalyst n i, Fe, Co of circular hole vertical deposition carbon nano-tube or carbon fiber on substrate, thickness 0.5nm-200nm, and peel off sacrifice layer with caustic solution; F. utilize chemical gaseous phase depositing process, also can use pyrolysismethod, grow upright carbon nano-tube/carbon fiber in the position at catalyst place.
In the operation of the carbon nano-tube of described growing upright, adopt chemical gaseous phase depositing process, also pyrolysismethod can be used, methane and hydrogen is passed in reative cell, the two content is than being CH4/H2=1:3 to 1:10, reaction chamber temperature 600 DEG C-850 DEG C, the direct voltage of use is 200V-1000V, and the time is 1-30 minute; The gas that indoor pass into also can be acetylene and ammonia, and its content is than being C2H2/NH3=1:3 to 1:10, and other conditions are constant.
The invention has the beneficial effects as follows: the carbon nano-tube that can grow large, the thin and tall shape of depth-width ratio, the field-transmitting cathode formed, launch stable, because the chemical stability of carbon nano-tube is better than metal, affect little by operational environment, simultaneously threshold voltage is low, and the manufacturing process of carbon nano-tube and equipment all fairly simple, therefore production cost can significantly decline.
Accompanying drawing explanation
Fig. 1 is grid-control of the present invention carbon nano-tube/carbon fiber field emitter arrays structural representation;
Fig. 2 is the vertical view of this gate modulated cathode;
Fig. 3 is this cathode manufacturing method FB(flow block).
Embodiment
Grid-control carbon nano-tube of the present invention/carbon fiber field emitter arrays structural representation shown in Fig. 1, in figure, electrically-conductive backing plate is 1, be 2 by array circular hole at the catalyst n i of its surface deposition, its little area of a circle is substantially identical with the scope of grown carbon nano-tube, insulating barrier is 3, adopt LPCVD method in the present embodiment, to generate 1 μm
insulating barrier, its disposed thereon has one deck Mo conductive layer 4,5 to represent the carbon nano-tube grown, and be positioned at the center in array hole 6, diameter is 0.2 μm.Fig. 2 is the vertical view of described negative electrode, the array arrangement of each aperture can be seen, the diameter in each hole is 1 μm, centre-to-centre spacing is 5 μm, thus the negative electrode of 1mm diameter will hold aperture like this more than 20,000 5 thousand, Fig. 3 is manufacture method flow chart, have seven operating procedures, the preparation of electrically-conductive backing plate can adopt the semi-conducting material of metal substrate or conduction, as aluminium sheet, monocrystalline silicon piece, also can on insulated substrate depositing conducting layer, as single or multiple lift metallic films such as plated metal Mo, W, Cr, Si, Ti on glass substrate; Insulating barrier can comprise deposition
deng, sacrificial layer material comprise Al, Cu, Cr,
deng, during deposition, the axis of sedimentary origin becomes inclination angle with substrate, and the catalyst of carbon nano-tube or carbon fiber comprises Fe, Co, Ni, Pd, carbon nano-tube or carbon fibre growth technique, comprise chemical vapour deposition (CVD) and antipyretic method etc., as adopt current plasma body electric discharge in the embodiment of being carried out, thickness of insulating layer is 0.3 to 30 microns, and aperture is 0.3 to 30 microns, gate hole centre distance is 3 to 100 microns, and the size of carbon nano-tube or carbon fiber is with the size respective change in hole.
Claims (1)
1. grid-control carbon nano-tube/carbon fiber field emitter arrays, it is characterized in that: comprise one piece of electrically-conductive backing plate as negative electrode, substrate deposits insulating barrier, described insulating barrier has layer of metal conductive layer, in aspect, form array circular hole control gate through insulating barrier, it is characterized in that, location point residing for center of circular hole catalyst grows upright carbon nano-tube, and its growing height can arrive the position at control gate center on metal conducting layer always.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310599290.1A CN104658828A (en) | 2013-11-25 | 2013-11-25 | Grid control carbon nano tube/carbon fiber field emission array cathode and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310599290.1A CN104658828A (en) | 2013-11-25 | 2013-11-25 | Grid control carbon nano tube/carbon fiber field emission array cathode and production method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104658828A true CN104658828A (en) | 2015-05-27 |
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| CN201310599290.1A Pending CN104658828A (en) | 2013-11-25 | 2013-11-25 | Grid control carbon nano tube/carbon fiber field emission array cathode and production method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081505A (en) * | 2019-12-24 | 2020-04-28 | 中山大学 | Nano cold cathode electron source with coplanar double-gate focusing structure and manufacturing method thereof |
| CN113675057A (en) * | 2021-07-12 | 2021-11-19 | 郑州大学 | Self-aligned graphene field emission gate structure and preparation method thereof |
-
2013
- 2013-11-25 CN CN201310599290.1A patent/CN104658828A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081505A (en) * | 2019-12-24 | 2020-04-28 | 中山大学 | Nano cold cathode electron source with coplanar double-gate focusing structure and manufacturing method thereof |
| CN113675057A (en) * | 2021-07-12 | 2021-11-19 | 郑州大学 | Self-aligned graphene field emission gate structure and preparation method thereof |
| CN113675057B (en) * | 2021-07-12 | 2023-11-03 | 郑州大学 | Self-aligned graphene field emission grid structure and preparation method thereof |
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Application publication date: 20150527 |