CN104655883B

CN104655883B - A kind of method of wafer pyrometer testing needle trace control

Info

Publication number: CN104655883B
Application number: CN201310602084.1A
Authority: CN
Inventors: 李亮; 杨振宇; 石志刚; 韩顺宝; 杨颖超
Original assignee: Beijing Chip Advanced Science And Technology Co Ltd
Current assignee: Zhejiang Quean Technology Co ltd
Priority date: 2013-11-26
Filing date: 2013-11-26
Publication date: 2018-02-13
Anticipated expiration: 2033-11-26
Also published as: CN104655883A

Abstract

The present invention provides a kind of method of wafer pyrometer testing needle trace control, performs following steps successively：Step is loaded into, wafer to be measured is loaded into slide holder, postpones step, before testing the wafer to be measured, postpones certain time, updates and collects data step, update and collect the data of the wafer to be measured, testing procedure, the wafer to be measured is tested.The effect of the present invention is to avoid the precision after probe station all parts deformation caused by temperature change to change, so as to cause pin trace effect and the thus appearance of the quality accident such as caused wafer test result exception and wafer loss.

Description

A kind of method of wafer pyrometer testing needle trace control

Technical field

The invention belongs to ic test technique field, and in particular to pin trace during a kind of progress high temperature test to wafer The method of control.

Background technology

In the conventionally test of wafer, conventional arrangement is carried out to equipment according to the standard step that operation manual is formulated, realized The automatic test being connected with test machine.When carrying out high temperature test, but because the change of temperature can be to equipment each in itself Accurate part, which includes probe card, can all produce physical change.The contraposition of probe and pressure point produces when thus can be to test product Error, guarantee whether consistent with the position of pressure point on wafer tube core that contraposition process is measured microscopically probe location by equipment Pin trace does not deviate by out pressure point scope, so that damage tube core.Such as according to high temperature test old process, it can be deduced that test is each Batch, thickness, radius and the probe length of wafer can all change, and high temperature test old process is only at first of each batch Wafer carries out warm pin, but has a section interval time during replacing wafer after current wafer is completed in test, this it is intersegmental every In time, probe is in non-contact and shelves state, and probe now can change with environment temperature, due to probe temperature not Disconnected change, pin trace length, which can also change, influences whether pin trace effect.Although also there is the method to the correction of pin trace now, effect Fruit is undesirable.

The content of the invention

For the above mentioned problem in solution technology, high temperature test process is adapted to, technique is to pressure during ensureing high temperature test The requirement of point pin trace size, position, extend the service life of probe card under hot environment, propose the present invention hereby.

The present invention is a kind of method of wafer pyrometer testing needle trace control, performs following steps successively：Step is loaded into, will be treated Survey wafer and be loaded into slide holder, postpone step, before testing the wafer to be measured, postpone certain time, update and collect Data step, update and collect the data of the wafer to be measured, testing procedure, the wafer to be measured is tested.

The present invention further provides a kind of method of wafer pyrometer testing needle trace control, the time of the delay is at least 60 Second.The time of delay can also be set as 60 to 70 seconds.

The present invention further provides a kind of wafer pyrometer testing needle trace control method, update and collect data step it Afterwards, probe is preheated.

The present invention further provides a kind of method of wafer pyrometer testing needle trace control, time of the preheating for 40 seconds extremely 60 seconds.

The present invention further provides a kind of method of wafer pyrometer testing needle trace control, the time of the preheating is 40 seconds.

The present invention further provides a kind of wafer pyrometer testing needle trace control method, before step is loaded into, also successively Perform following steps：Design temperature step is heated up to, equipment is warming up to high temperature design temperature；

Equipment preheating step, equipment is stood 120 minutes；System calibration step, by system calibration to each of probe station Individual part carries out resurveying and updating calibration data for data.

Present invention, avoiding precision after the probe station all parts deformation caused by temperature change to change, so as to cause Pin trace effect and the thus appearance of the quality accident such as caused wafer sort results abnormity and wafer damage.

Brief description of the drawings

Fig. 1 is the flow chart of the high temperature test of the present invention.

The wafer thickness that Fig. 2 is the present invention corresponds to time change value schematic diagram.

Embodiment

Step shown in reference picture 1, S101-S103 is to carry out the preparation work before high temperature test, as long as setting once not Change high temperature test state just not having to reform the process again.First, step S101 is to be heated up to design temperature.I.e. by equipment liter Temperature can have height error twice to high temperature design temperature, and warm-up time is 6 minutes, during heating, the position of slide holder It is moved to initial position.Secondly, step S102 preheats for equipment.After design temperature is warming up to, equipment stands 120 minutes, Its object is to which device interior is established into hot environment, contraposition calibration steps is set to reach stable state in high temperature environments.Then, Step S103 is system calibration step, that is, after preheating, the precision of each part of probe station can pass through system with being deviated during normal temperature Calibrate and all parts of probe station are carried out with resurveying and updating calibration data for data, equipment passes through height during this The methods of measurement, aligning parts measurement, collects the probe station hardware such as parameter such as high low power lens of slide holder surface parameter, microscope, Necessary basis is provided for pin trace precise control.

Step S104 is exactly transmitted by manipulator and wafer is placed on slide holder to be loaded into step.

Enter stand-by period, i.e. time delay step S105 after S104 steps terminate, this time is to ensure wafer Reach the thermally equilibrated time after being loaded into slide holder and being heated.As shown in table 1 and Fig. 2, by testing research repeatedly, the time is determined It is optimal for the 60-70 seconds.Because wafer goes forward to have been at normal temperature state being loaded onto slide holder within this time, in order that Wafer reaches design temperature, and wafer can be conducted heat when being loaded onto on slide holder by slide holder to be heated up, in temperature-rise period Wafer can produce the change of data with the rise of temperature, before wafer data information i.e. step S106 is updated, need Wafer rested on into slide holder the preceding paragraph time to be fully warmed-up, to reach stable state.By being recorded in waiting process In every 10 seconds wafer thickness data situation, according to numerical value change situation, determine wafer thickness it is stable required for time, Stabilization is basically reached by wafer thickness when repeatedly test gropes to find the preheating 60-70 seconds, data now can be used as setting The basic data of depth of probe value, pin trace depth is basically identical, thus determines the preheating time of wafer, while pin trace is determined Effect.Wafer thickness change corresponding with the time in the case of a high temperature can be seen that by table 1 and Fig. 2.In addition, though 60 seconds extremely Be optimal between 70 seconds, after being further appreciated that 70 seconds wafer thickness still in basicly stable, that is, change it is small, although not Such as 60 to 70 seconds, but the effect of the present invention can also be basically reached.

Time (sec)	Temperature (DEG C)	Wafer thickness (mil)
			0	90℃	29.597
10	90℃	29.875
			20	90℃	29.958
30	90℃	30.097
			40	90℃	30.139
50	90℃	30.208
			60	90℃	30.236
70	90℃	30.236
			80	90℃	30.222

Table 1

After S105 time delay steps terminate, renewal wafer data step is collected into S106, now equipment passes through height Detection, edge detection, measure the whole height that wafer is loaded into after slide holder, by parts such as equipment delineation devices to wafer table Face carries out the measurement of thickness, edge, is calculated with the equipment slide holder height value obtained during S103 steps, draws now wafer Thickness；By the measurement to edge, wafer radius is calculated, obtains the data of wafer size, and is updated into probe station system, Basic data as test.

Probe preheating step S107 is entered below, and during action before S106 steps are performed, probe has been at often Temperature state, because probe is not physically contacted in waiting process with equipment high-temperature part, it can not be added by part of appliance Temperature, only after wafer is touched, just conduction heating can be carried out by the temperature of crystallographic axis stream, visited to draw during this Pin changes (length, position etc.) caused by because heated, in the case of probe push down depth identical, after contacting wafer to probe Pin trace effect contrasted, i.e., the warm pin time shown in table 2 corresponds to pin trace effect.

Table 2

From data as can be seen that with after wafer contacts, lengthening over time, being tested with test machine program, Test result belongs to normal；When the warm pin time is less than 40 seconds, size, the depth of pin trace are unstable, and this is due to probe with temperature The rise of degree and change probe length in itself and be not reaching to it is stable caused by, in order to ensure that the size of pin trace accounts for pressure point face Product ratio is not more than 1/4, makes the effect of pin trace more stable, so will be set to preheating time at least 40 seconds, and no more than 60 Second, if it exceeds 60 seconds have influenceed on the probe station life-span.

Start proper testing into S108 steps.Afterwards S105-S107 is repeated per wafer test process.

Claims

A kind of 1. method of wafer pyrometer testing needle trace control, it is characterised in that perform following steps successively：

Step is loaded into, wafer to be measured is loaded into slide holder,

Postpone step, before testing the wafer to be measured, postpone certain time, the time of the delay is at least 60 Second,

Renewal and collection data step, update and collect the data of the wafer to be measured,

Probe preheating step, after updating and collecting data step, probe is preheated by the temperature conduction of crystallographic axis stream, The time of the preheating is at least 40 seconds to 60 seconds,

Testing procedure, the wafer to be measured is tested.
2. the method for a kind of wafer pyrometer testing needle trace control according to claim 1, it is characterised in that the delay Time is 60 to 70 seconds.
A kind of 3. method of wafer pyrometer testing needle trace control according to claim 1, it is characterised in that the preheating when Between be 40 seconds.
4. the method controlled according to a kind of wafer pyrometer testing needle trace any one of in claims 1 to 3, its feature exist In before step is loaded into, also performing following steps successively：

Design temperature step is heated up to, equipment is warming up to high temperature design temperature；

Equipment preheating step, equipment is stood 120 minutes；

System calibration step, by system calibration all parts of probe station are carried out with resurveying and updating calibration number for data According to.