CN104655883A

CN104655883A - Method for controlling high-temperature test needle mark of wafer

Info

Publication number: CN104655883A
Application number: CN201310602084.1A
Authority: CN
Inventors: 李亮; 杨振宇; 石志刚; 韩顺宝; 杨颖超
Original assignee: Beijing Chip Advanced Science And Technology Co Ltd
Current assignee: Zhejiang Quean Technology Co ltd
Priority date: 2013-11-26
Filing date: 2013-11-26
Publication date: 2015-05-27
Anticipated expiration: 2033-11-26
Also published as: CN104655883B

Abstract

The invention provides a method for controlling a high-temperature test needle mark of a wafer. The method comprises the following steps: a loading step: loading to a wafer to be tested into a slide holder; a delaying step: delaying a certain time before the wafer to be tested is tested; a data updating and collecting step: updating and collecting data of the wafer to be tested; a testing step: testing the wafer to be tested. The method provided by the invention has the benefit that a needle mark effect and quality accidents such as abnormal test result of the wafer and the loss of the wafer, which are caused by the fact that the precision is changed as the parts of a probe table are deformed due to the change of temperature, are avoided.

Description

A kind of method that wafer pyrometer testing needle trace controls

Technical field

The invention belongs to ic test technique field, be specifically related to a kind of method pin trace controlled when high temperature test carries out to wafer.

Background technology

In the conventionally test of wafer, the standard step formulated according to operation manual is carried out routine to equipment and is arranged, the automatic test that implementation and testing machine connects.When carrying out high temperature test, but because the change of temperature can comprise probe to each accurate parts of equipment itself and all can produce physical change.Will produce error to the contraposition of probe during test products and pressure point like this, whether contraposition process is namely consistent with the position of pressure point on wafer tube core by equipment microscope measuring probe position, ensures that pin trace can not deviate from pressure point scope, so that damage tube core.(contraposition could be explained down).Such as according to high temperature test old process, test each batch can be drawn, the thickness of wafer, radius and probe length all can change, high temperature test old process only carries out warm pin at the first wafer of each batch, but when having the spacer segment time in the process changing wafer after having tested current wafer, in this spacer segment time, probe is in noncontact and shelves state, probe now can change along with environment temperature, due to the continuous change of probe temperature, namely pin trace length also can change can have influence on pin trace effect.Although also there is now the method corrected pin trace, effect is undesirable.

Summary of the invention

In order to the problems referred to above in technical solution, adapt to high temperature test operation, ensure that in high temperature test process, technique is to the requirement of pressure point pin trace size, position, under prolongation hot environment, in the serviceable life of probe, propose the present invention hereby.

The present invention is a kind of method that wafer pyrometer testing needle trace controls, perform following steps successively: be loaded into step, wafer to be measured is loaded into slide holder, postpone step, before described wafer to be measured is tested, postpone certain hour, upgrade and collect data step, upgrade and collect the data of described wafer to be measured, testing procedure, tests described wafer to be measured.

The present invention further provides a kind of method that wafer pyrometer testing needle trace controls, the time of described delay is at least 60 seconds.The time of delay can also be set as 60 to 70 seconds.

The present invention further provides a kind of method that wafer pyrometer testing needle trace controls, after renewal and collecting data step, preheating is carried out to probe.

The present invention further provides a kind of method that wafer pyrometer testing needle trace controls, the time of described preheating is 40 seconds to 60 seconds.

The present invention further provides a kind of method that wafer pyrometer testing needle trace controls, the time of described preheating is 40 seconds.

The present invention further provides a kind of method that wafer pyrometer testing needle trace controls, before loading step, also perform following steps successively: heat to design temperature step, equipment is warming up to high temperature design temperature;

Equipment preheating step, leaves standstill 120 minutes by equipment; System calibration step, carries out the Resurvey of data by system calibration to all parts of probe station and upgrades calibration data.

After present invention, avoiding the probe station all parts distortion caused due to temperature variation, precision changes, thus causes the appearance of pin trace effect and the quality accident such as the wafer sort results abnormity caused thus and wafer damage.

Accompanying drawing explanation

Fig. 1 is the process flow diagram of high temperature test of the present invention.

Fig. 2 is wafer thickness of the present invention corresponding time variations value schematic diagram.

Embodiment

With reference to step shown in Fig. 1, S101-S103 is the preparation work before carrying out high temperature test, does not once change high temperature test state just need not again to reform this process as long as set.First, step S101 is for heating to design temperature.Be warming up to high temperature design temperature by equipment, can have height error twice, warm-up time is 6 minutes, heats in process, and the position of slide holder will move to initial position.Secondly, step S102 is equipment preheating.After being warming up to design temperature, equipment leaves standstill 120 minutes, its object is to device interior to set up hot environment, makes contraposition calibration steps reach steady state (SS) in high temperature environments.Then, step S103 is system calibration step, namely after preheating, the precision of each parts of probe station can with deviation to some extent during normal temperature, by system calibration the Resurvey of data carried out to all parts of probe station and upgrade calibration data, in this process, equipment collects probe station hardware as parameters such as slide holder surface parameter, microscope height low power lens by the method such as elevation carrection, aligning parts measurement, for the precise control of pin trace provides necessary basis.

Step S104, for being loaded into step, being transmitted by mechanical arm exactly and is placed on slide holder by wafer.

After S104 step terminates, enter the stand-by period, namely time delay step S105, this time is to ensure that wafer reaches the thermally equilibrated time being loaded into after slide holder is heated.As shown in table 1 and Fig. 2, through testing research repeatedly, the time of determination is that 60-70 second is for best.Because wafer goes forward to be in normal temperature state being loaded on slide holder always within this period, design temperature is reached in order to make wafer, wafer can be heated up by slide holder heat transfer when being loaded on slide holder, in temperature-rise period, wafer can produce the change of data along with the rising of temperature, before carrying out renewal wafer data information and step S106, needing wafer to rest on slide holder the preceding paragraph time carries out abundant preheating, to reach steady state (SS).By being recorded in the data situation of every 10 seconds wafer thickness in waiting process, according to numerical value change situation, determine that wafer thickness stablizes the required time, grope to find that preheating 60-70 wafer thickness second reaches stable substantially through repeatedly testing, data now can as the basic data of setting depth of probe value, the pin trace degree of depth is basically identical, determines the preheating time of wafer thus, determines pin trace effect simultaneously.By table 1 and Fig. 2 can find out wafer in the case of a high temperature thickness change with the corresponding of time.In addition, although be best between 60 seconds to 70 seconds, after recognizing 70 seconds further, wafer thickness is still in basicly stable, namely changes little, although not as 60 to 70 seconds, also substantially can reach effect of the present invention.

Time (sec)	Temperature (DEG C)	Wafer thickness (mil)
			0	90℃	29.597
10	90℃	29.875
			20	90℃	29.958
30	90℃	30.097
			40	90℃	30.139
50	90℃	30.208
			60	90℃	30.236
70	90℃	30.236
			80	90℃	30.222

Table 1

After S105 step time delay terminates, enter S106 and collect renewal wafer data step, now equipment is by height detecting, edge detection, measure wafer be loaded into slide holder after whole height, the parts such as limit device carry out thickness, edge measurement to crystal column surface is visited by equipment, calculate with the equipment slide holder height value obtained during S103 step, draw now wafer thickness; By the measurement of edge, calculate wafer radius, obtain the data of wafer size, and be updated in probe station system, as the basic data of test.

Enter into probe preheating step S107 below, when performing the action before S106 step, probe is in normal temperature state always, because probe does not have physical contact with equipment high-temperature part in waiting process, cannot be heated by part of appliance, only after touching wafer, just can carry out conduction by the temperature of crystallographic axis stream to heat, in order to draw the change (length that this process middle probe produces because being heated, position etc.), when probe depression depths is identical, pin trace effect after probes touch wafer is contrasted, namely the corresponding pin trace effect of warm pin time shown in table 2.

Table 2

As can be seen from data, with wafer contacts after, along with the lengthening of time, test by test machine program, test result all belongs to normal; The temperature pin time is when being less than 40 seconds, size, the degree of depth of pin trace are unstable, this changes the length of probe itself due to probe along with the rising of temperature and does not reach stable caused, in order to ensure that the size of pin trace accounts for pressure point area ratio and is not more than 1/4, make the effect of pin trace more stable, so at least 40 seconds will be decided to be preheating time, and can not more than 60 seconds, if affected to some extent the probe station life-span more than 60 seconds.

Enter S108 step and start proper testing.Every wafer test process repeats S105-S107 afterwards.

Claims

1. a method for wafer pyrometer testing needle trace control, is characterized in that, perform following steps successively:

Be loaded into step, wafer to be measured be loaded into slide holder,

Postpone step, before described wafer to be measured is tested, postpone certain hour,

Upgrade and collect data step, upgrade and collect the data of described wafer to be measured,

Testing procedure, tests described wafer to be measured.

2. the method for a kind of wafer pyrometer testing needle trace control according to claim 1, it is characterized in that, the time of described delay is at least 60 seconds.

3. the method for a kind of wafer pyrometer testing needle trace control according to claim 2, it is characterized in that, the time of described delay is 60 to 70 seconds.

4. the method for a kind of wafer pyrometer testing needle trace control according to claim 1, is characterized in that, after renewal and collecting data step, carry out preheating to probe.

5. the method for a kind of wafer pyrometer testing needle trace control according to claim 4, it is characterized in that, the time of described preheating is at least 40 seconds to 60 seconds.

6. the method for a kind of wafer pyrometer testing needle trace control according to claim 5, it is characterized in that, the time of described preheating is 40 seconds.

7. according to the method that a kind of wafer pyrometer testing needle trace in claim 1 to 6 described in any one controls, it is characterized in that, before loading step, also perform following steps successively:

Heat to design temperature step, equipment is warming up to high temperature design temperature;

Equipment preheating step, leaves standstill 120 minutes by equipment;

System calibration step, carries out the Resurvey of data by system calibration to all parts of probe station and upgrades calibration data.