CN104638954B - A kind of MOSFET bridge circuits - Google Patents
A kind of MOSFET bridge circuits Download PDFInfo
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- CN104638954B CN104638954B CN201510114239.6A CN201510114239A CN104638954B CN 104638954 B CN104638954 B CN 104638954B CN 201510114239 A CN201510114239 A CN 201510114239A CN 104638954 B CN104638954 B CN 104638954B
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- port
- tube
- pmos tube
- nmos tube
- poe
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The present invention relates to field of communication technology, more particularly to a kind of MOSFET bridge circuit, current potential extraction circuit, metal-oxide-semiconductor driving circuit, the first PMOS tube, the second PMOS tube, the first NMOS tube and the second NMOS tube.The current potential extraction circuit is connected with the metal-oxide-semiconductor driving circuit, and the metal-oxide-semiconductor driving circuit is connected respectively with first PMOS tube, the second PMOS tube, the first NMOS tube and the second NMOS tube.MOSFET bridge circuit provided by the invention, scale of mass production simple in structure, easy to implement can reduce power consumption and reduce caloric value.
Description
Technical field
The present invention relates to field of communication technology, more particularly to a kind of MOSFET bridge circuit.
Background technology
Industry is using diode rectification bridge circuit on PoE at present, and there are efficiency is low, the bigger fever of output power is higher
The shortcomings that, it can not be used in powerful PD equipment.More and more with the function of communication products, the power consumption of product is also followed
It is increasing, such as the application of PoE+, PoE++ product.Meanwhile with global warming, Global Precipitation amount is redistributed, ice
River and frozen soil ablation, sea level rise, has both endangered the balance of natural ecosystems, more threaten the existence of the mankind.MOSFET bridge
Application can greatly improve efficiency, it is energy saving, reduce greenhouse effects, alleviate global warming trend.Make at present in PoE equipment
There are mainly two types of bridge circuits：Diode rectifier bridge heap.With the PDBC devices using Linear companies as representative.Diode rectification
Bridge heap can be only applied on the product of low-power consumption, and lower with the increase efficiency of product power consumption, caloric value is bigger, on rectifier bridge stack
Power consumption be P (W)=1.4 (V) * Iout (A).PDBC devices are expensive, handled inside circuit using boosting mode, to drive
8 N-channel MOSFET are moved, principle complexity is not easy to realize, it is difficult to which scale of mass production uses.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of simple in structure, easy to implement, can reduce power consumption and subtract
The MOSFET bridge circuit of small caloric value.
In order to solve the above technical problems, the present invention provides a kind of MOSFET bridge circuit, including：Current potential extraction circuit, MOS
Tube drive circuit, the first PMOS tube, the second PMOS tube, the first NMOS tube and the second NMOS tube.
It is defeated that current potential extraction circuit is provided with cathode power supply input port, negative power supply input port, high potential extraction
Exit port and low potential extraction output port.
High potential input port, low potential input port, the first PMOS tube grid are provided on the metal-oxide-semiconductor driving circuit
Drive port, the first PMOS tube source drive port, the second PMOS tube raster data model port, the second PMOS tube source drive end
Mouth, the first NMOS tube raster data model port, the first NMOS tube source drive port, the second NMOS tube raster data model port and second
NMOS tube source drive port.
The high potential extraction output port is connected with the high potential input port；The low potential extracts output port
It is connected with the low potential input port.
The first PMOS tube raster data model port is connected with the grid of first PMOS tube；The first PMOS tube source
Pole driving port is connected with the source electrode of first PMOS tube；The second PMOS tube raster data model port and the 2nd PMOS
The grid connection of pipe；The second PMOS tube source drive port is connected with the source electrode of the 2nd PMOS；First NMOS
Tube grid driving port is connected with the grid of first NMOS tube；The first NMOS tube source drive port and described first
The source electrode connection of NMOS tube；The second NMOS tube raster data model port is connected with the grid of second NMOS tube；Described
Two NMOS tube source drive ports are connected with the source electrode of second NMOS tube.
The drain electrode of first PMOS tube is connected to form PoE positive pole output terminals with the drain electrode of second PMOS tube；
The drain electrode of first NMOS tube is connected to form PoE power cathode output terminals with the drain electrode of second NMOS tube.
Further, further include：PoE positive poles output port and PoE power cathode output ports；
The PoE positive poles output port is connected with the PoE positive poles output terminal；The POE power cathodes are defeated
Exit port is connected with the PoE power cathodes output terminal.
MOSFET bridge circuit provided by the invention when cathode power supply input port is connected with the anode of PoE power supplies, is born
When pole power input port is connected with the cathode of PoE power supplies, the first PMOS tube and the first NMOS tube are opened, and PoE power supplys are just
PoE positive poles after the output terminal output rectification of pole, the PoE power cathodes after the output rectification of PoE power cathodes output terminal.When just
Pole power input port connection PoE power supply cathode, when negative power supply input port connects PoE power supply anodes, second
PMOS tube and the second NMOS tube are opened, the PoE power cathodes after the output rectification of PoE positive poles output terminal, and PoE power cathodes are defeated
PoE positive poles after outlet output rectification.MOSFET bridge circuit provided by the invention possesses following advantageous effect：
1st, MOSFET bridge is formed using four metal-oxide-semiconductors, since metal-oxide-semiconductor conduction voltage drop is small, avoided using diode rectification
The power dissipation generated during bridge loses, and reduces caloric value and noise.
2nd, MOSFET bridge is formed using four metal-oxide-semiconductors, itself dissipated power is low, it is achieved that energy efficiently turns
Change, and operating current is less than 1mA.
3rd, it (is respectively that cathode power supply input port, negative power supply are defeated that the present invention, which provides several output ports that are simply input,
Inbound port, PoE positive poles output port and PoE power cathodes output port), it is simple in structure, it can be used with scale of mass production.
4th, the PD equipment such as completely compatible IEEE802.3af/at/PoE+/PoE++ passes through the parts selection of metal-oxide-semiconductor etc., sheet
The equipment that invention can even be compatible with higher power.
5th, the application of two pairs and four pairs lines of RJ45 can be compatible with simultaneously, i.e., when using RJ45 two to line (line 1 and line 2, line 3
With line 6) when being powered, use the positive-negative power after one group of circuit of the present invention, that is, exportable rectification；When use RJ45 tetra- is to line
When (line 1 and line 2, line 3 and line 6, line 4 and line 5, line 7 and line 8) is powered, two groups of circuits of the present invention, that is, exportable whole are used
Positive-negative power after stream.
6th, the equipment that maximum 100V can be supported according to the pressure voltage of device, the present invention, the device for selecting pressure voltage higher,
The present invention can even support the voltage of higher demand.It can support the Surge voltages of 1500V.Can be at 125 DEG C, even more high
At a temperature of work.The present invention is at low cost only with 2 PMOS and 2 NMOS, and metal-oxide-semiconductor is driven more using partial pressure decompression mode
Reliably.
Description of the drawings
Fig. 1 is MOSFET bridge electrical block diagram provided in an embodiment of the present invention.
Specific embodiment
As shown in Figure 1, an embodiment of the present invention provides a kind of MOSFET bridge circuit, including：Current potential extraction circuit 3, metal-oxide-semiconductor
Driving circuit 4, the first PMOS tube 5, the second PMOS tube 6, the first NMOS tube 7 and the second NMOS tube 8.
As shown in Figure 1, current potential extraction circuit 3 is provided with cathode power supply input port 1, negative power supply input port 2, high electricity
Position extraction output port 11 and low potential extraction output port 12.
As shown in Figure 1, high potential input port 13, low potential input port 14, are provided on metal-oxide-semiconductor driving circuit 4
One PMOS tube raster data model port 15, the first PMOS tube source drive port 16, the second PMOS tube raster data model port 17, second
PMOS tube source drive port 18, the first NMOS tube raster data model port 19, the first NMOS tube source drive port 20, second
NMOS tube raster data model port 21 and the second NMOS tube source drive port 22.
As shown in Figure 1, high potential extraction output port 11 is connected with high potential input port 13；Low potential extracts output terminal
Mouth 12 is connected with low potential input port 14.
As shown in Figure 1, the first PMOS tube raster data model port 15 is connected with the grid of the first PMOS tube；First PMOS tube source
Pole driving port 16 is connected with the source electrode of the first PMOS tube；Second PMOS tube raster data model port 17 and the grid of the second PMOS tube
Connection；Second PMOS tube source drive port 18 is connected with the source electrode of the 2nd PMOS；First NMOS tube raster data model port 19 with
The grid connection of first NMOS tube；First NMOS tube source drive port 20 is connected with the source electrode of the first NMOS tube；2nd NMOS
Tube grid driving port 21 is connected with the grid of the second NMOS tube；Second NMOS tube source drive port 22 and the second NMOS tube
Source electrode connects.
As shown in Figure 1, the drain electrode of the first PMOS tube is connected to form PoE positive pole output terminals with the drain electrode of the second PMOS tube
9；The drain electrode of first NMOS tube is connected to form PoE power cathodes output terminal 10 with the drain electrode of the second NMOS tube.
To be easy to use, MOSFET bridge circuit provided in an embodiment of the present invention further includes：PoE positive pole output ports
And PoE power cathode output ports.As shown in Figure 1, PoE positive poles output port is connected with PoE positive poles output terminal 9；
PoE power cathodes output port is connected with PoE power cathodes output terminal 10.
MOSFET bridge circuit provided in an embodiment of the present invention, when cathode power supply input port and the anode of PoE power supplies
Connection, when negative power supply input port is connected with the cathode of PoE power supplies, the first PMOS tube and the first NMOS tube are opened, PoE
PoE positive poles after the output rectification of positive pole output terminal, the PoE power supplys after the output rectification of PoE power cathodes output terminal are born
Pole.When cathode power supply input port connects PoE power supply cathode, negative power supply input port connection PoE power supply anodes
When, the second PMOS tube and the second NMOS tube are opened, the PoE power cathodes after the output rectification of PoE positive poles output terminal, PoE electricity
PoE positive poles after the cathode output end output rectification of source.
MOSFET bridge circuit provided in an embodiment of the present invention possesses following advantageous effect：
1st, MOSFET bridge is formed using four metal-oxide-semiconductors, since metal-oxide-semiconductor conduction voltage drop is small, avoided using diode rectification
The power dissipation generated during bridge loses, and reduces caloric value and noise.
2nd, MOSFET bridge is formed using four metal-oxide-semiconductors, itself dissipated power is low, it is achieved that energy efficiently turns
Change, and operating current is less than 1mA.
3rd, it (is respectively that cathode power supply input port, negative power supply are defeated that the present invention, which provides several output ports that are simply input,
Inbound port, PoE positive poles output port and PoE power cathodes output port), it is simple in structure, it can be used with scale of mass production.
4th, the PD equipment such as completely compatible IEEE802.3af/at/PoE+/PoE++ passes through the parts selection of metal-oxide-semiconductor etc., sheet
The equipment that invention can even be compatible with higher power.
5th, the application of two pairs and four pairs lines of RJ45 can be compatible with simultaneously, i.e., when using RJ45 two to line (line 1 and line 2, line 3
With line 6) when being powered, use the positive-negative power after one group of circuit of the present invention, that is, exportable rectification；When use RJ45 tetra- is to line
When (line 1 and line 2, line 3 and line 6, line 4 and line 5,7 line 8 of line) is powered, two groups of circuits of the present invention, that is, exportable rectification is used
Positive-negative power afterwards.
6th, the equipment that maximum 100V can be supported according to the pressure voltage of device, the present invention, the device for selecting pressure voltage higher,
The present invention can even support the voltage of higher demand.It can support the Surge voltages of 1500V.Can be at 125 DEG C, even more high
At a temperature of work.The present invention is at low cost only with 2 PMOS and 2 NMOS, and metal-oxide-semiconductor is driven more using partial pressure decompression mode
Reliably.
It should be noted last that more than specific embodiment is merely illustrative of the technical solution of the present invention and unrestricted,
Although the present invention is described in detail with reference to example, it will be understood by those of ordinary skill in the art that, it can be to the present invention
Technical solution be modified or replaced equivalently, without departing from the spirit and scope of technical solution of the present invention, should all cover
Among scope of the presently claimed invention.
Claims (2)
1. a kind of MOSFET bridge circuit, which is characterized in that including：Current potential extraction circuit, metal-oxide-semiconductor driving circuit, the first PMOS tube,
Second PMOS tube, the first NMOS tube and the second NMOS tube；
The current potential extraction circuit is provided with cathode power supply input port, negative power supply input port, high potential extraction output terminal
Mouth and low potential extraction output port；
High potential input port, low potential input port, the first PMOS tube raster data model are provided on the metal-oxide-semiconductor driving circuit
Port, the first PMOS tube source drive port, the second PMOS tube raster data model port, the second PMOS tube source drive port,
One NMOS tube raster data model port, the first NMOS tube source drive port, the second NMOS tube raster data model port and the 2nd NMOS
Pipe source drive port；
The high potential extraction output port is connected with the high potential input port；The low potential extraction output port and institute
State the connection of low potential input port；
The first PMOS tube raster data model port is connected with the grid of first PMOS tube；The first PMOS tube source electrode drives
Moved end mouthful is connected with the source electrode of first PMOS tube；The second PMOS tube raster data model port and second PMOS tube
Grid connects；The second PMOS tube source drive port is connected with the source electrode of the 2nd PMOS；The first NMOS tube grid
Pole driving port is connected with the grid of first NMOS tube；The first NMOS tube source drive port and the first NMOS
The source electrode connection of pipe；The second NMOS tube raster data model port is connected with the grid of second NMOS tube；Described second
NMOS tube source drive port is connected with the source electrode of second NMOS tube；
The drain electrode of first PMOS tube is connected to form PoE positive pole output terminals with the drain electrode of second PMOS tube；It is described
The drain electrode of first NMOS tube is connected to form PoE power cathode output terminals with the drain electrode of second NMOS tube.
2. MOSFET bridge circuit according to claim 1, which is characterized in that further include：PoE positive poles output port and
PoE power cathode output ports；
The PoE positive poles output port is connected with the PoE positive poles output terminal；The PoE power cathodes output terminal
Mouth is connected with the PoE power cathodes output terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510114239.6A CN104638954B (en) | 2015-03-16 | 2015-03-16 | A kind of MOSFET bridge circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510114239.6A CN104638954B (en) | 2015-03-16 | 2015-03-16 | A kind of MOSFET bridge circuits |
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| Publication Number | Publication Date |
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| CN104638954A CN104638954A (en) | 2015-05-20 |
| CN104638954B true CN104638954B (en) | 2018-05-25 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1874133A (en) * | 2006-06-27 | 2006-12-06 | 肖俊承 | Full wave bridge type circuit of synchronous rectification |
| CN201204552Y (en) * | 2008-06-04 | 2009-03-04 | 北京铱钵隆芯科技有限责任公司 | Rectifier bridge circuit |
| CN104092389A (en) * | 2014-07-24 | 2014-10-08 | 国家电网公司 | Low-loss rectifying circuit |
| CN204442189U (en) * | 2015-03-16 | 2015-07-01 | 博为科技有限公司 | A kind of MOSFET bridge circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0173949B1 (en) * | 1995-10-16 | 1999-05-01 | 김광호 | A full-wave bridge rectifier circuit |
| US8248141B2 (en) * | 2005-07-08 | 2012-08-21 | Med-El Elekromedizinische Geraete Gmbh | Data and power system based on CMOS bridge |
| US9577546B2 (en) * | 2013-03-15 | 2017-02-21 | Pai Capital Llc | Power converter with self-driven synchronous rectifier control circuitry |
-
2015
- 2015-03-16 CN CN201510114239.6A patent/CN104638954B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1874133A (en) * | 2006-06-27 | 2006-12-06 | 肖俊承 | Full wave bridge type circuit of synchronous rectification |
| CN201204552Y (en) * | 2008-06-04 | 2009-03-04 | 北京铱钵隆芯科技有限责任公司 | Rectifier bridge circuit |
| CN104092389A (en) * | 2014-07-24 | 2014-10-08 | 国家电网公司 | Low-loss rectifying circuit |
| CN204442189U (en) * | 2015-03-16 | 2015-07-01 | 博为科技有限公司 | A kind of MOSFET bridge circuit |
Non-Patent Citations (1)
| Title |
|---|
| 一种全桥同步整流器的设计及其应用;王贤江等;《电子科技》;20120915;第25卷(第9期);第91-92页，图2 * |
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| Publication number | Publication date |
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| CN104638954A (en) | 2015-05-20 |
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Address after: 314400 Room 201, building 2, No. 306, Gushui Road, Haining Economic Development Zone, Haining City, Jiaxing City, Zhejiang Province Patentee after: BIRTRONIX TECHNOLOGY CORPORATION Address before: 307, room 2, building 522, 314000 Asia Pacific Road, Nanhu District, Zhejiang, Jiaxing Patentee before: BIRTRONIX TECHNOLOGY CORPORATION |
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Denomination of invention: A MOSFET bridge circuit Effective date of registration: 20211011 Granted publication date: 20180525 Pledgee: Agricultural Bank of China Limited by Share Ltd. South Lake branch Pledgor: BOWEI TECHNOLOGY Co.,Ltd. Registration number: Y2021980010558 |