CN104638954A - MOSFET (metal-oxide-semiconductor field effect transistor) bridge circuit - Google Patents
MOSFET (metal-oxide-semiconductor field effect transistor) bridge circuit Download PDFInfo
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- CN104638954A CN104638954A CN201510114239.6A CN201510114239A CN104638954A CN 104638954 A CN104638954 A CN 104638954A CN 201510114239 A CN201510114239 A CN 201510114239A CN 104638954 A CN104638954 A CN 104638954A
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- pmos
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- nmos tube
- poe
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention relates to the technical field of communication, in particular to an MOSFET (metal-oxide-semiconductor field effect transistor) bridge circuit. The MOSFET bridge circuit comprises a potential extraction circuit, an MOS (metal oxide semiconductor) tube drive circuit, a first PMOS (P-channel metal oxide semiconductor) tube, a second PMOS tube, a first NMOS (N-channel metal oxide semiconductor) tube and a second NMOS tube, wherein the potential extraction circuit is connected with the MOS tube drive circuit; the MOS tube drive circuit is respectively connected with the first PMOS tube, the second PMOS tube, the first NMOS tube and the second NMOS tube. The MOSFET bridge circuit provided by the invention is simple in structure; large-scale mass production is easy to achieve; power consumption can be lowered; the calorific value can be reduced.
Description
Technical field
The present invention relates to communication technical field, particularly a kind of MOSFET bridge circuit.
Background technology
Current industry is used in the diode rectification bridge circuit on PoE, there is the shortcoming that efficiency is low, the larger heating of power output is higher, cannot use on powerful PD equipment.Along with the function of communication products gets more and more, the power consumption of product is also and then increasing, as the application of the products such as PoE+, PoE++.Meanwhile, along with global warming, Global Precipitation amount is redistributed, glacier and frozen soil melts, sea level rise, has both endangered the balance of natural ecosystems, more threaten the existence of the mankind.The application of MOSFET bridge can be raised the efficiency greatly, energy savings, reduction greenhouse effect, alleviate global warming trend.The bridge circuit that current PoE equipment uses mainly contains two kinds: diode rectifier bridge is piled.With the PDBC device being representative with Linear company.Diode rectifier bridge heap can only be applied on the product of low-power consumption, and along with the increase efficiency of product power consumption is lower, caloric value is larger, and the power consumption on rectifier bridge stack is P (W)=1.4 (V) * Iout (A).PDBC device is expensive, and its inside circuit uses boosting mode process, and drive 8 N-channel MOSFET, principle complexity not easily realizes, and is difficult to scale of mass production and uses.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of structure and simply, easily realizes, and can reduce the MOSFET bridge circuit of power consumption and reduction caloric value.
For solving the problems of the technologies described above, the invention provides a kind of MOSFET bridge circuit, comprising: current potential extracts circuit, metal-oxide-semiconductor drive circuit, the first PMOS, the second PMOS, the first NMOS tube and the second NMOS tube.
Described current potential extracts circuit and is provided with cathode power supply input port, negative power supply input port, high potential extraction output port and electronegative potential extraction output port.
Described metal-oxide-semiconductor drive circuit is provided with high potential input port, electronegative potential input port, the first PMOS grid drive end mouth, the first PMOS source drive port, the second PMOS grid drive end mouth, the second PMOS source drive port, the first NMOS tube raster data model port, the first NMOS tube source drive port, the second NMOS tube raster data model port and the second NMOS tube source drive port.
Described high potential extracts output port and is connected with described high potential input port; Described electronegative potential extracts output port and is connected with described electronegative potential input port.
Described first PMOS grid drive end mouth is connected with the grid of described first PMOS; Described first PMOS source drive port is connected with the source electrode of described first PMOS; Described second PMOS grid drive end mouth is connected with the grid of described second PMOS; Described second PMOS source drive port is connected with the source electrode of described 2nd PMOS; Described first NMOS tube raster data model port is connected with the grid of described first NMOS tube; Described first NMOS tube source drive port is connected with the source electrode of described first NMOS tube; Described second NMOS tube raster data model port is connected with the grid of described second NMOS tube; Described second NMOS tube source drive port is connected with the source electrode of described second NMOS tube.
The drain electrode of described first PMOS and the drain electrode of described second PMOS are connected to form PoE positive source output; The drain electrode of described first NMOS tube and the drain electrode of described second NMOS tube are connected to form PoE power cathode output.
Further, also comprise: PoE positive source output port and PoE power cathode output port;
Described PoE positive source output port is connected with described PoE positive source output; Described POE power cathode output port is connected with described PoE power cathode output.
MOSFET bridge circuit provided by the invention, when the positive pole of cathode power supply input port with PoE power supply is connected, when negative power supply input port is connected with the negative pole of PoE power supply, first PMOS and the first NMOS tube are opened, PoE positive source output exports the PoE positive source after rectification, and PoE power cathode output exports the PoE power cathode after rectification.When cathode power supply input port connects PoE power supply negative pole, when negative power supply input port connects PoE power supply positive pole, second PMOS and the second NMOS tube are opened, PoE positive source output exports the PoE power cathode after rectification, and PoE power cathode output exports the PoE positive source after rectification.MOSFET bridge circuit provided by the invention possesses following beneficial effect:
1, adopt four metal-oxide-semiconductors to form MOSFET bridge, because metal-oxide-semiconductor conduction voltage drop is little, avoid the power dissipation produced when adopting diode rectifier bridge and lose, reduce caloric value and noise.
2, adopt four metal-oxide-semiconductors to form MOSFET bridge, itself dissipation power is low, therefore achieve the Efficient Conversion of energy, and operating current is less than 1mA.
3, the invention provides several simple input/output port (being respectively cathode power supply input port, negative power supply input port, PoE positive source output port and PoE power cathode output port), structure is simple, can scale of mass production use.
4, the PD equipment such as complete compatible IEEE802.3af/at/PoE+/PoE++, by the parts selection of metal-oxide-semiconductor etc., the present invention even can the more high-power equipment of compatibility.
5, to the application with four pairs of lines, namely when adopting RJ45 two pairs of lines (line 1 and line 2, line 3 and line 6) to power, the positive-negative power after one group of circuit of the present invention and exportable rectification can be used by compatible RJ45 two simultaneously; When adopting RJ45 tetra-pairs of lines (line 1 and line 2, line 3 and line 6, line 4 and line 5, line 7 and line 8) to power, use the positive-negative power after two groups of circuit of the present invention and exportable rectification.
6, according to the withstand voltage of device, the present invention can support the equipment of maximum 100V, and select the device that withstand voltage is higher, the present invention even can support the voltage of higher demand.The Surge voltage of 1500V can be supported.At 125 DEG C, can work at even higher temperature.The present invention only adopts 2 PMOS and 2 NMOS, and cost is low, adopts dividing potential drop step-down mode driven MOS pipe more reliable.
Accompanying drawing explanation
The MOSFET bridge circuit structural representation that Fig. 1 provides for the embodiment of the present invention.
Embodiment
As shown in Figure 1, embodiments provide a kind of MOSFET bridge circuit, comprising: current potential extracts circuit 3, metal-oxide-semiconductor drive circuit 4, first PMOS 5, second PMOS 6, first NMOS tube 7 and the second NMOS tube 8.
As shown in Figure 1, current potential extracts circuit 3 and is provided with cathode power supply input port 1, negative power supply input port 2, high potential extraction output port 11 and electronegative potential extraction output port 12.
As shown in Figure 1, metal-oxide-semiconductor drive circuit 4 is provided with high potential input port 13, electronegative potential input port 14, first PMOS grid drive end mouth 15, first PMOS source drive port one 6, second PMOS grid drive end mouth 17, second PMOS source drive port one 8, first NMOS tube raster data model port one 9, first NMOS tube source drive port 20, second NMOS tube raster data model port 21 and the second NMOS tube source drive port 22.
As shown in Figure 1, high potential extraction output port 11 is connected with high potential input port 13; Electronegative potential extracts output port 12 and is connected with electronegative potential input port 14.
As shown in Figure 1, the first PMOS grid drive end mouth 15 is connected with the grid of the first PMOS; First PMOS source drive port one 6 is connected with the source electrode of the first PMOS; Second PMOS grid drive end mouth 17 is connected with the grid of the second PMOS; Second PMOS source drive port one 8 is connected with the source electrode of the 2nd PMOS; First NMOS tube raster data model port one 9 is connected with the grid of the first NMOS tube; First NMOS tube source drive port 20 is connected with the source electrode of the first NMOS tube; Second NMOS tube raster data model port 21 is connected with the grid of the second NMOS tube; Second NMOS tube source drive port 22 is connected with the source electrode of the second NMOS tube.
As shown in Figure 1, the drain electrode of the first PMOS and the drain electrode of the second PMOS are connected to form PoE positive source output 9; The drain electrode of the first NMOS tube and the drain electrode of the second NMOS tube are connected to form PoE power cathode output 10.
For easy to use, the MOSFET bridge circuit that the embodiment of the present invention provides, also comprises: PoE positive source output port and PoE power cathode output port.As shown in Figure 1, PoE positive source output port is connected with PoE positive source output 9; PoE power cathode output port is connected with PoE power cathode output 10.
The MOSFET bridge circuit that the embodiment of the present invention provides, when the positive pole of cathode power supply input port with PoE power supply is connected, when negative power supply input port is connected with the negative pole of PoE power supply, first PMOS and the first NMOS tube are opened, PoE positive source output exports the PoE positive source after rectification, and PoE power cathode output exports the PoE power cathode after rectification.When cathode power supply input port connects PoE power supply negative pole, when negative power supply input port connects PoE power supply positive pole, second PMOS and the second NMOS tube are opened, PoE positive source output exports the PoE power cathode after rectification, and PoE power cathode output exports the PoE positive source after rectification.
The MOSFET bridge circuit that the embodiment of the present invention provides possesses following beneficial effect:
1, adopt four metal-oxide-semiconductors to form MOSFET bridge, because metal-oxide-semiconductor conduction voltage drop is little, avoid the power dissipation produced when adopting diode rectifier bridge and lose, reduce caloric value and noise.
2, adopt four metal-oxide-semiconductors to form MOSFET bridge, itself dissipation power is low, therefore achieve the Efficient Conversion of energy, and operating current is less than 1mA.
3, the invention provides several simple input/output port (being respectively cathode power supply input port, negative power supply input port, PoE positive source output port and PoE power cathode output port), structure is simple, can scale of mass production use.
4, the PD equipment such as complete compatible IEEE802.3af/at/PoE+/PoE++, by the parts selection of metal-oxide-semiconductor etc., the present invention even can the more high-power equipment of compatibility.
5, to the application with four pairs of lines, namely when adopting RJ45 two pairs of lines (line 1 and line 2, line 3 and line 6) to power, the positive-negative power after one group of circuit of the present invention and exportable rectification can be used by compatible RJ45 two simultaneously; When adopting RJ45 tetra-pairs of lines (line 1 and line 2, line 3 and line 6, line 4 and line 5, line 7 line 8) to power, use the positive-negative power after two groups of circuit of the present invention and exportable rectification.
6, according to the withstand voltage of device, the present invention can support the equipment of maximum 100V, and select the device that withstand voltage is higher, the present invention even can support the voltage of higher demand.The Surge voltage of 1500V can be supported.At 125 DEG C, can work at even higher temperature.The present invention only adopts 2 PMOS and 2 NMOS, and cost is low, adopts dividing potential drop step-down mode driven MOS pipe more reliable.
It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to example to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (2)
1. a MOSFET bridge circuit, is characterized in that, comprising: current potential extracts circuit, metal-oxide-semiconductor drive circuit, the first PMOS, the second PMOS, the first NMOS tube and the second NMOS tube;
Described current potential extracts circuit and is provided with cathode power supply input port, negative power supply input port, high potential extraction output port and electronegative potential extraction output port;
Described metal-oxide-semiconductor drive circuit is provided with high potential input port, electronegative potential input port, the first PMOS grid drive end mouth, the first PMOS source drive port, the second PMOS grid drive end mouth, the second PMOS source drive port, the first NMOS tube raster data model port, the first NMOS tube source drive port, the second NMOS tube raster data model port and the second NMOS tube source drive port;
Described high potential extracts output port and is connected with described high potential input port; Described electronegative potential extracts output port and is connected with described electronegative potential input port;
Described first PMOS grid drive end mouth is connected with the grid of described first PMOS; Described first PMOS source drive port is connected with the source electrode of described first PMOS; Described second PMOS grid drive end mouth is connected with the grid of described second PMOS; Described second PMOS source drive port is connected with the source electrode of described 2nd PMOS; Described first NMOS tube raster data model port is connected with the grid of described first NMOS tube; Described first NMOS tube source drive port is connected with the source electrode of described first NMOS tube; Described second NMOS tube raster data model port is connected with the grid of described second NMOS tube; Described second NMOS tube source drive port is connected with the source electrode of described second NMOS tube;
The drain electrode of described first PMOS and the drain electrode of described second PMOS are connected to form PoE positive source output; The drain electrode of described first NMOS tube and the drain electrode of described second NMOS tube are connected to form PoE power cathode output.
2. MOSFET bridge circuit according to claim 1, is characterized in that, also comprise: PoE positive source output port and PoE power cathode output port;
Described PoE positive source output port is connected with described PoE positive source output; Described PoE power cathode output port is connected with described PoE power cathode output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510114239.6A CN104638954B (en) | 2015-03-16 | 2015-03-16 | A kind of MOSFET bridge circuits |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510114239.6A CN104638954B (en) | 2015-03-16 | 2015-03-16 | A kind of MOSFET bridge circuits |
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| CN104638954A true CN104638954A (en) | 2015-05-20 |
| CN104638954B CN104638954B (en) | 2018-05-25 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1148288A (en) * | 1995-10-16 | 1997-04-23 | 三星电子株式会社 | Full-wave bridge rectifier circuit |
| CN1874133A (en) * | 2006-06-27 | 2006-12-06 | 肖俊承 | Full wave bridge type circuit of synchronous rectification |
| CN201204552Y (en) * | 2008-06-04 | 2009-03-04 | 北京铱钵隆芯科技有限责任公司 | Rectifier bridge circuit |
| US20090225576A1 (en) * | 2005-07-08 | 2009-09-10 | Med-El Elektromedizinische Geraete Gmbh | Data and Power System Based on CMOS Bridge |
| US20140268956A1 (en) * | 2013-03-15 | 2014-09-18 | Power-One, Inc. | Power converter with self-driven synchronous rectifier control circuitry |
| CN104092389A (en) * | 2014-07-24 | 2014-10-08 | 国家电网公司 | Low-loss rectifying circuit |
| CN204442189U (en) * | 2015-03-16 | 2015-07-01 | 博为科技有限公司 | A kind of MOSFET bridge circuit |
-
2015
- 2015-03-16 CN CN201510114239.6A patent/CN104638954B/en active Active
Patent Citations (7)
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|---|---|---|---|---|
| CN1148288A (en) * | 1995-10-16 | 1997-04-23 | 三星电子株式会社 | Full-wave bridge rectifier circuit |
| US20090225576A1 (en) * | 2005-07-08 | 2009-09-10 | Med-El Elektromedizinische Geraete Gmbh | Data and Power System Based on CMOS Bridge |
| CN1874133A (en) * | 2006-06-27 | 2006-12-06 | 肖俊承 | Full wave bridge type circuit of synchronous rectification |
| CN201204552Y (en) * | 2008-06-04 | 2009-03-04 | 北京铱钵隆芯科技有限责任公司 | Rectifier bridge circuit |
| US20140268956A1 (en) * | 2013-03-15 | 2014-09-18 | Power-One, Inc. | Power converter with self-driven synchronous rectifier control circuitry |
| CN104092389A (en) * | 2014-07-24 | 2014-10-08 | 国家电网公司 | Low-loss rectifying circuit |
| CN204442189U (en) * | 2015-03-16 | 2015-07-01 | 博为科技有限公司 | A kind of MOSFET bridge circuit |
Non-Patent Citations (2)
| Title |
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| 一种全桥同步整流器的设计及其应用;王贤江等;《电子科技》;20120915;第25卷(第9期);第91-92页，图2 * |
| 王贤江等: "一种全桥同步整流器的设计及其应用", 《电子科技》 * |
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| CN104638954B (en) | 2018-05-25 |
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Address after: 314400 Room 201, building 2, No. 306, Gushui Road, Haining Economic Development Zone, Haining City, Jiaxing City, Zhejiang Province Patentee after: BIRTRONIX TECHNOLOGY CORPORATION Address before: 307, room 2, building 522, 314000 Asia Pacific Road, Nanhu District, Zhejiang, Jiaxing Patentee before: BIRTRONIX TECHNOLOGY CORPORATION |
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Denomination of invention: A MOSFET bridge circuit Effective date of registration: 20211011 Granted publication date: 20180525 Pledgee: Agricultural Bank of China Limited by Share Ltd. South Lake branch Pledgor: BOWEI TECHNOLOGY Co.,Ltd. Registration number: Y2021980010558 |
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