CN104638515B - III V races and silicon hybrid laser structures and methods are bonded based on zinc oxide - Google Patents
III V races and silicon hybrid laser structures and methods are bonded based on zinc oxide Download PDFInfo
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Abstract
Included the invention discloses one kind based on zinc oxide bonding III V races and silicon hybrid laser structures and methods, methods described：Silicon waveguide is made on silicon chip；In silicon waveguide end deep etching bond area, direction extension first size of the bond area along the silicon waveguide end, extend the second size perpendicular to silicon wave guide direction；And in the bond area using the silicon waveguide core as axis, both ends each extend over the 3rd size and form bond area central platform, the groove that the bond area beyond the bond area central platform is etched to certain depth forms deep etching region；In surface spin coating zinc oxide, spin coating photoresist again afterwards, after photolithographic exposure development remove the photoresist in the deep etching region, erode the zinc oxide in the deep etching region afterwards；In surface spin coating photoresist, development removes the photoresist beyond deep etching region；By III V race's lasers with being bonded to the deep etching region, entry port of the exit ports to eka-silicon waveguide.
Description
Technical field
This method is related to technical field of semiconductors, particularly a kind of end coupling III- being bonded by photoresist zinc oxide
V races and silicon hybrid laser and its bonding method.
Background technology
In recent decades, one of main means of fiber optic communication telecommunication always.However, with information technology
Increase constantly progressive, that modern society is being exceedingly fast for the demand of data processing and transmission, the distance especially below 10 meters
In data transmission applications, traditional copper wires can not increasingly meet people to transmission rate and the pursuit of low-power consumption.Board
Between, the optical interconnection between chip and board, between chip and chip or even on chip turning into what silicon based photon was being studied
Focus.Silicon substrate optical interconnection device includes light source, modulator, amplifier, wavelength division multiplexer and waveguide etc..The difficult point of silicon substrate optical interconnection
One of be exactly on silicon integrate a stable LASER Light Source.At present, it is by being bonded III-V laser to develop faster method
Device is integrated on silicon.Hyundai Park et al., using this cryogenic oxygen plasma bonding techniques, by AlGaInAs quantum
Trap epitaxial material Direct Bonding realizes the mixing silicon substrate laser of optical pumping lasing first in the silicon waveguide that CMOS technology makes
Device, the emission wavelength of this laser is 1538nm, power output 1.4mW.Fang et al. realizes the continuous electric pump of room temperature
Fabry-Perot cavity AlGaInAs mixed type silicon substrate lasers, the maximum operation temperature of the laser is 40 DEG C, and threshold current is
65mA, peak power output 1.8mW, differential quantum efficency 12.7%.Hsu Hao Chang et al., which have made, to be based on
The mixed type silicon substrate laser of AlGaInAs materials, this laser emission wavelength are 1310nm, threshold current 30mA, maximum
Power output is 5.5mW, it is important that its maximum operating temperature is significantly increased to 105 DEG C.The same year, the group also successfully develop
Silicon substrate hybrid laser with locked mode function, it is 40GHz that the laser, which can produce frequency, and pulsewidth is 4ps laser.Can
With applied to silicon substrate wavelength division multiplexer, adaptive multiplexer and Optical Code Division Multiplexing device.Silicon substrate hybrid laser is due to adopting before
With FP resonators, its end face polishes relatively difficult.Fang et al. is prepared for the silicon substrate mixed type laser of endless track resonator
Device, and it is integrated with two based on the photo-detector that evanescent waves couple.The light sent from laser is first coupled into
In silicon waveguide, received after the transmission of waveguide by the detector at both ends.In light network, the single longitudinal mode characteristic of laser for
Signal modulation is very necessary.Therefore, Fang et al. has made distributed feed-back by making optical grating construction in SOI waveguides
(DFB) silicon substrate disappearance wave laser, realizes single mode emission.The laser threshold current is 25mA, maximum work output at 10 DEG C
Rate is 5.4mW, and maximum operating temperature is up to 50 DEG C.Afterwards, they are prepared for being distributed Bradley with similar method in silicon waveguide again
Lattice reflect (DBR) grating, realize DBR silicon substrate disappearance wave lasers, and the threshold current of the laser is 65mA, maximum work output
Rate is 11mW.Then, the group is based on Direct Bonding, and modulator, detector, wavelength division multiplexer are successively completed in silicon platform
Deng the making of photoelectron element.And in 2010, joint Intel integrated these discrete photonic devices, designs
A light network transceiver module with a width of 50Gbps is made.In order to solve the problems, such as insulating bond interface in Direct Bonding.
2009, Chen Ting of Peking University et al. proposed the method by selective area growth bond wire, and metal is grown in into coupling
The silicon waveguide both sides beyond region are closed, so as to not influence the coupling of light.2012, the group introduced one on bonded interface again
The ITO of layer electrically conducting transparent, effectively increase the conductive capability of bonded interface side.Although ITO has more preferable electric conductivity,
Its cost is higher, in-convenience in use.
The content of the invention
In view of this, the present invention proposes a kind of end coupling iii-v being bonded by photoresist zinc oxide and silicon mixes
Mould assembly laser and its bonding method, its zinc oxide synthesized by using sol-gel process, burnett's solution is spin-coated on silicon chip
On, under the photoresist auxiliary that selection region is placed, iii-v laser is bonded to silicon waveguide port side so that laser
The light that device is sent is coupled into silicon waveguide by port.
The present invention proposes the bonding method of a kind of end coupling iii-v and silicon hybrid laser, and it includes：
Step 1：Silicon waveguide is made on silicon chip；
Step 2：In silicon waveguide end deep etching bond area, direction of the bond area along the silicon waveguide end is prolonged
First size is stretched, extends the second size perpendicular to silicon wave guide direction；And in the bond area using the silicon waveguide core as axle
Line, both ends each extend over the 3rd size and form bond area central platform, by the bonding beyond the bond area central platform
The groove of region etch certain depth forms deep etching region；
Step 3：In surface spin coating zinc oxide, and solvent is removed after heating the scheduled time, afterwards spin coating photoresist again, photoetching
Development removes the photoresist in the deep etching region after exposure, erodes the zinc oxide in the deep etching region afterwards；
Step 4：In surface spin coating photoresist, after carrying out photolithographic exposure, development removes the photoresist beyond deep etching region；
Step 5：By iii-v laser with being bonded to the deep etching region, incidence of the exit ports to eka-silicon waveguide
Port.
The invention also provides a kind of end coupling iii-v bonded together to form using the above method and silicon mixed type laser
Device device architecture, it includes：
Silicon waveguide；
Waveguide etch areas, thereon formed with silicon waveguide；
Bond area central platform, it is located at one end of the silicon waveguide；
Deep etching region, it is located at the both sides of bond area central platform line centered on the axis of silicon waveguide；
Photoresist bonded layer, it is located at the deep etching region surface；
Zinc oxide bonded layer, it is located at the bond area central platform surface；
Iii-v laser, it is bonded on the deep etching region and bond area central platform.
It is higher to have obtained bond strength by being bonded iii-v and silicon materials with photoresist come assisted oxidation zinc by the present invention
Sample, zinc oxide bonded layer is with good electric conductivity and in communication band with very high transmitance.
It is relatively low to equipment requirement that flow is bonded in such scheme proposed by the present invention, and used zinc oxide bonding material
With advantages such as inexpensive, easy to use and using flexibles, good application can be provided.
Brief description of the drawings
Fig. 1 is the end coupling iii-v and silicon hybrid laser being bonded in the present invention by photoresist zinc oxide
Device architecture schematic top plan view；
Fig. 2 is the end coupling iii-v and silicon hybrid laser being bonded in the present invention by photoresist zinc oxide
Device architecture schematic side view；
Fig. 3 is the end coupling iii-v and silicon hybrid laser being bonded in the present invention by photoresist zinc oxide
Device architecture front schematic view.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
It is an object of the present invention to provide it is a kind of based on photoresist assisted oxidation zinc bonding end coupling iii-v and
The structures and methods of silicon hybrid laser.It is to provide a kind of technique simple iii-v laser in silicon base luminescence application
Device integration mode.Photoresist is placed by using in the deep etching region of bond area, the land regions in bond area are placed
Zinc oxide, realize bonding of the III-V material to silicon.Using the electric conductivity of zinc oxide, electricity can be guided on silicon, and obtain very
High bond strength.
Fig. 1 shows that the present invention proposes a kind of end coupling iii-v being bonded by photoresist zinc oxide and silicon mixes
The device architecture schematic top plan view of mould assembly laser.As shown in figure 1, it includes：
The silicon waveguide 11 of one dry etching, it is located in waveguide etch areas 12；
One waveguide etch areas 12；
One zinc oxide bond area central platform 14, it is located at one end of silicon waveguide 11；
One deep etching places photoresist region 13, and it is located at zinc oxide key and regional center platform 14 with the axle of silicon waveguide 11
The both sides of line centered on line；
One photoresist aids in bonded layer, positioned at the upper surface of deep etching region 13；
One zinc oxide bonded layer, 14 upper surfaces on the central platform of zinc oxide bond area；
Iii-v laser, it is bonded on the deep etching region and bond area central platform.
The invention also provides a kind of end coupling iii-v and silicon mixed type based on the bonding of photoresist assisted oxidation zinc
The method of laser, comprises the following steps：
Step 1：Silicon waveguide 11 is made on silicon chip, soi wafer used in the silicon waveguiding structure has following parameter：Oxygen buried layer
1000~2000nm of thickness, top layer silicon thickness are 500~800nm.Etching forms silicon 500~5000nm of duct width, silicon waveguide
Highly 200~800nm.The made both sides of silicon waveguide 11 are waveguide etch areas 12；
Step 2：In one end deep etching bond area as shown in Figure 1 of silicon waveguide 11, it includes deep etching region 13
With zinc oxide bond area central platform 14, the bond area is more than 1mm along the direction size of silicon waveguide 11, perpendicular to waveguide
Direction size is more than 100 μm.At the port adjacent with bond area of silicon waveguide 11, using waveguide core as axis, perpendicular to ripple
The both ends for leading bearing of trend are each extended over more than 50 μm, form zinc oxide bond area central platform 14, the zinc oxide bonding region
The groove that both sides etching depth is 1~3 μm beyond domain central platform 14 is as deep etching region 13, for placing photoresist；
Step 3：The surface of total (including silicon waveguide 11, waveguide etch areas 12, deep etching region 13 and oxidation
The surface of zinc bond area central platform 14) on the synthesis of spin coating sol-gel process zinc oxide, 50~80 degrees Centigrades 3~
Remove solvent within 10 minutes, after the surface of total spin coating photoresist again, photolithographic exposure development remove deep etching region 13
Photoresist, the zinc oxide in deep etching region 13 is eroded with watery hydrochloric acid.Wherein, the photoetching that deep etching region is removed with acetone is utilized
Glue.
Step 4：In total surface spin coating photoresist, using the photolithography plate with corresponding alignment mark, with alignment
After mode photolithographic exposure, development removes the photoresist beyond deep etching region 13.
Step 5：The iii-v laser component made based on prior art is bonded to deep etching region with bonding apparatus
13 and zinc oxide bond area central platform 14, exit ports are small to the entry port of eka-silicon waveguide 11, two-port horizontal range
In 20 μm.
Wherein, the iii-v laser emission wavelength is 1310nm GaAs base InAs quantum dot laser or hair
Hit a length of 1550nm of cardiac wave InP-base quantum-well laser.
Wherein, the zinc oxide for bonding is synthesized with sol-gel process, and concentration is 0.5~1mol/L.
Wherein, using photoetching technique so that be used to aiding in groove bonding photoresist and groove edge have 5 μm-
10 μm of distance, so that photoresist is squeezed flowing in bonding process.
Wherein, bonding temperature is 150~200 degrees Celsius, and bonding time is 1~3 hour, and axial compressive force added by bonding is 2
~10N.
Wherein, bonding temperature increases to 150~200 degrees Celsius with 1 DEG C/min speed.Room is naturally cooled to after bonding
Temperature.
Wherein, the alignment precision of the light-receiving end face (end coupling) of the light emitting end face of laser and silicon waveguide is in sub-micro
Rice magnitude.
Wherein, the waveguide etching in step 1 is using inductively coupled plasma (ICP) etching or reactive ion etching
Or selective wet chemical etching (RIE).
Wherein, etched recesses corrode silicon using the mixed solution of nitric acid, water and hydrofluoric acid, then with hydrogen fluoride, ammonium fluoride
Corrode silica with the mixed solution of hydrogen peroxide.
The characteristic of position is conveniently defined present invention utilizes photoresist, the bonding for largely strengthening zinc oxide is strong
Degree, simultaneous oxidation zinc are not only a kind of preferably electrically conducting transparent bonding medium, and, easy to use, cost simple with synthesis
The characteristics of low.Other end coupling technical maturity, is advantageous to practical application.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., the protection of the present invention should be included in
Within the scope of.
Claims (10)
1. a kind of be bonded iii-v and the method for silicon hybrid laser based on zinc oxide, it includes：
Step 1：Silicon waveguide is made on silicon chip；
Step 2：In silicon waveguide end deep etching bond area, direction extension the of the bond area along the silicon waveguide end
One size, extend the second size perpendicular to silicon wave guide direction；And in the bond area using the silicon waveguide core as axis, two
End each extends over the 3rd size and forms bond area central platform, and the bond area beyond the bond area central platform is carved
The groove for losing certain depth forms deep etching region；
Step 3：In surface spin coating zinc oxide, and solvent is removed after heating the scheduled time, afterwards spin coating photoresist again, photolithographic exposure
Development removes the photoresist in the deep etching region afterwards, erodes the zinc oxide in the deep etching region afterwards；
Step 4：In surface spin coating photoresist, after carrying out photolithographic exposure, development removes the photoresist beyond deep etching region；
Step 5：By iii-v laser with being bonded to the deep etching region, entry port of the exit ports to eka-silicon waveguide.
2. according to the method for claim 1, wherein, the iii-v laser is that emission center wavelength is 1310nm
GaAs base InAs quantum dot lasers or the InP-base quantum-well laser that emission center wavelength is 1550nm.
3. according to the method for claim 1, wherein, the zinc oxide for bonding is synthesized with sol-gel process, concentration
For 0.5~1mol/L.
4. the method according to claim 11, wherein, the photoresist and groove retained in deep etching region described in step 4
The distance of preliminary dimension be present in edge.
5. according to the method for claim 1, wherein, bonding temperature is 150~200 degrees Celsius in step 5, bonding time is
1~3 hour, axial compressive force added by bonding was 2~10N.
6. according to the method for claim 5, wherein, bonding temperature increases to 150 with 1 DEG C/min speed and taken the photograph in step 5
Family name's degree, room temperature is naturally cooled to after bonding.
7. according to the method for claim 1, wherein, the alignment precision of end coupling is in sub-micrometer scale in step 5.
8. according to the method for claim 1, wherein, silicon waveguide described in step 1 using inductively coupled plasma etching,
Reactive ion etching or selective wet chemical etching are formed.
9. according to the method for claim 1, wherein, etched recesses are molten using the mixing of nitric acid, water and hydrofluoric acid in step 2
Corrosion silicon, then corrode silica with the mixed solution of hydrogen fluoride, ammonium fluoride and hydrogen peroxide and formed.
10. iii-v and silicon hybrid laser structure that a kind of method using described in claim 1 bonds together to form, it is wrapped
Include：
Silicon waveguide；
Waveguide etch areas, thereon formed with silicon waveguide；
Bond area central platform, it is located at one end of the silicon waveguide；
Deep etching region, it is located at the both sides of bond area central platform line centered on the axis of silicon waveguide；
Photoresist bonded layer, it is located at the deep etching region surface；
Zinc oxide bonded layer, it is located at the bond area central platform surface；
Iii-v laser, it is bonded on the deep etching region and bond area central platform.
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| CN108054182B (en) * | 2017-12-19 | 2024-04-12 | 苏州矩阵光电有限公司 | Compound semiconductor silicon-based hybrid device and preparation method thereof |
| CN110277731B (en) * | 2018-03-15 | 2020-09-25 | 山东大学 | III-V group silicon-based low-refractive-index gap structure DBR laser and integration method |
| CN111181006B (en) * | 2018-11-12 | 2021-05-11 | 中国科学院半导体研究所 | On-chip bonded Si/III-V quantum dot single photon source and preparation method thereof |
| CN111262132B (en) * | 2018-11-30 | 2021-08-27 | 中国科学院半导体研究所 | III-V group/silicon material slotted bonding laser structure and method thereof |
| CN114815060B (en) * | 2022-05-06 | 2023-09-29 | 厦门市三安集成电路有限公司 | Mixed light transmission module with polymer transition structure and manufacturing method thereof |
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| US8106379B2 (en) * | 2006-04-26 | 2012-01-31 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
| US8257990B2 (en) * | 2009-12-30 | 2012-09-04 | Intel Corporation | Hybrid silicon vertical cavity laser with in-plane coupling |
| CN102638000A (en) * | 2012-04-20 | 2012-08-15 | 中国科学院半导体研究所 | Method for preparing silicon-based mix laser device by etching trenchs on silicon waveguide |
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