CN104638075A - Method for preparing epitaxial structure capable of increasing LED (light-emitting diode) brightness - Google Patents
Method for preparing epitaxial structure capable of increasing LED (light-emitting diode) brightness Download PDFInfo
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- CN104638075A CN104638075A CN201510061076.XA CN201510061076A CN104638075A CN 104638075 A CN104638075 A CN 104638075A CN 201510061076 A CN201510061076 A CN 201510061076A CN 104638075 A CN104638075 A CN 104638075A
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000012298 atmosphere Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 241001012508 Carpiodes cyprinus Species 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 13
- 229910052799 carbon Inorganic materials 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000010348 incorporation Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a method for preparing an epitaxial structure capable of increasing LED (light-emitting diode) brightness. The method comprises the following steps of pretreating a substrate at a high temperature in a hydrogen atmosphere, and sequentially growing a buffer layer, a non-doped GaN layer, an n type GaN layer, at least two layers of multi-quantum well active layers, a p type electronic baffle layer, a p type GaN layer and a p type contact layer on the surface of the substrate, wherein each quanta trap active layer consists of at least two InGaN trap layers and a base layer, each quanta trap is grown at high pressure, and during a growing process, a small amount of hydrogen is introduced. The quanta trap is grown at high pressure, and meanwhile, the small amount of hydrogen is introduced during the growing process, so that carbon impurity content in an InGaN thin film is reduced, and the LED brightness is reduced.
Description
Technical field
The invention belongs to LED epitaxy technology growth field, particularly relate to a kind of epitaxial preparation method improving LED luminance.
Background technology
Light-emitting diode (LED, Light Emitting Diode) has longevity, energy-saving and environmental protection, high reliability, and in recent years, LED has played more and more important effect in fields such as large-sized solor display, traffic lights and illuminations.But to can be more widely used on full-color screen display and lighting field, then need the brightness promoting LED further.
Multi-quantum well active region as the nucleus of LED, usually by organizing InGaN quantum well and GaN barrier layer is alternately stacked forms more.But due to H
2have reproducibility, there is chemical reaction in easy and In, generates complex compound, thus affect the incorporation efficiency of In in InGaN.Therefore, in existing growth technique, Multiple Quantum Well generally grows under pure nitrogen gas atmosphere, as described in patent 201210189941.5, and grown quantum trap under pure nitrogen gas atmosphere.
Because the incorporation efficiency of In under high pressure declines, therefore in prior art, InGaN quantum well grows usually in low pressure, and 200-500 Torr generally can be adopted as the pressure limit of growth.
Because the MO source metal adopted in growth is organic source, and containing a large amount of C and O in organic source, these C, O impurity can be incorporated in Multiple Quantum Well, reduce crystal mass, thus affect the efficiency of active area, affect the brightness of LED.
Summary of the invention
In view of the above, the present invention proposes a kind of epitaxial structures growth method improving LED luminance.
Object of the present invention, will be achieved by the following technical programs:
Improve an epitaxial structure preparation method for LED luminance, described preparation method comprises the following steps:
S1, in a hydrogen atmosphere, high-temperature process substrate;
S2, in GaN layer and the n-type GaN layer of the substrate surface processed successively grown buffer layer, undoped;
S3, n-type GaN layer periodically grows at least two-layer multiple quantum well active layer, and described multiple quantum well active layer comprises quantum well layer and barrier layer;
S4, multiple quantum well active layer grows p-type electronic barrier layer, p-type GaN layer and P type contact layer successively;
In described S3, the growth conditions of multiple quantum well active layer is, temperature is 650-900 DEG C, and pressure is 500-1000 Torr, and keeps passing into hydrogen in the growth of described quantum well layer, and the hydrogen flowing quantity passed into is 0-200 sccm.
Preferably, in described S3, multiple quantum well active layer growth comprises the steps:
S31, passes into hydrogen in nitrogen atmosphere, and grow the InGaN quantum well layer that first thickness is 1-5nm, described nitrogen flow is 20-70 L/min, and the hydrogen flowing quantity passed into is 0-200 sccm;
S32, on first the InGaN quantum well layer grown, continued growth thickness is the barrier layer of 3-25nm, and barrier layer grows under pure hydrogen, pure nitrogen gas or nitrogen and hydrogen mixture atmosphere, and described total gas couette is 20-70 L/min;
S33, repeats S31, S32 step growth multiple quantum well active layer.
The present invention gives prominence to effect:
(1) hydrogen of 0-200sccm is passed in quantum trap growth, can in guarantee In incorporation efficiency situation, significantly reduce C and the O impurity in Quantum well active district, improve the crystal mass of multi-quantum well active region, improve the crystal mass of multi-quantum well active region, proposed the brightness of LED, if be greater than the hydrogen of 200 sccm, In incorporation efficiency reduces on the contrary;
(2) under the high pressure of 500-1000 Torr, grow multiple quantum well active layer, contribute to reducing C and the O impurity content in multi-quantum well active region, improve the crystal mass of active area;
(3) after epitaxial wafer is made into 10 mil*16 mil chips, brightness is significantly improved, and the epitaxial wafer that the method for luminous efficiency more existing growth MQW grows exceeds 5%.
Below just accompanying drawing in conjunction with the embodiments, is described in further detail the specific embodiment of the present invention, is easier to understand, grasp to make technical solution of the present invention.
Accompanying drawing explanation
Fig. 1 is the LED epitaxial structure schematic diagram in the present embodiment.
Fig. 2 is the C impurity content comparison diagram in the multi-quantum well active region that grows of the present embodiment and prior art.
Wherein, 1 is substrate, and 2 is low temperature buffer layer, and 3 is non-doped gan layer, and 4 is n-type GaN layer, and 5 is InGaN quantum well layer, and 6 is barrier layer, and 7 is electronic barrier layer, and 8 is p-type GaN layer, and 9 is P type contact layer.
Embodiment
The invention provides a kind of epitaxial structure preparation method improving LED luminance, this method adopts the MOCVD device of Aixtron company to carry out epitaxial growth, uses NH
3, TMGa/TEGa, TMIn be respectively as N, Ga, In source.
Improve an epitaxial structure for LED luminance, as shown in Figure 1, comprise substrate 1, low temperature buffer layer 2, undoped GaN layer 3, n-type GaN layer 4, some layers of multiple quantum well active layer, p-type electronic barrier layer 7, p-type GaN layer 8 and P type contact layer 9.Each described multiple quantum well active layer comprises at least one deck InGaN quantum well layer 5 and barrier layer 6.Be generally and reach actual luminous demand, adopt 3-20 InGaN/GaN multiple quantum well active layer.The structure of this multiple quantum well layer, originally as prior art, does not repeat them here.
Above-described epitaxial structure preparation method, specifically comprises the steps:
S1, in a hydrogen atmosphere, high-temperature process substrate;
S2, in GaN layer and the n-type GaN layer of the substrate surface processed successively grown buffer layer, undoped;
S3 is temperature 750 DEG C at growth conditions, under pressure 700 Torr, and cyclical growth 3-20 layer multiple quantum well active layer in n-type GaN layer;
The present embodiment grows 12 multiple quantum well layers, and passes into 100sccm hydrogen in described each quantum trap growth process, and under pressure maintains 700 Torr.
S31, passes into a small amount of hydrogen in nitrogen atmosphere, and grow the InGaN quantum well layer that first thickness is 2.5nm, described nitrogen flow is 65L/min, and the hydrogen flowing quantity passed into is 100 sccm;
S32, on first the InGaN quantum well layer grown, continued growth thickness is the barrier layer of 14nm, and barrier layer grows under pure hydrogen atmosphere, and described hydrogen gas stream amount is 65 L/min; Repeated growth like this 12 mqw active layers.Certainly, described barrier layer also can grow under pure nitrogen gas or nitrogen and hydrogen mixed gas atmosphere.
Because the In component in quantum well is higher, In easily separates out, and causes the interface quality of quantum well and barrier layer poor, affects the brightness of LED, and therefore the present invention proposes in quantum well, pass into a small amount of H
2, the In separated out in etching quantum well, to improve the interface quality of quantum well and barrier layer.
Experimental studies have found that and pass into a small amount of H
2, the interface of quantum well and barrier layer flattens whole, and the interface that TEM shows quantum well and barrier layer is very smooth; Another due to H
2there is reproducibility, can also react with C and O, reduce C and the O impurity concentration in quantum well; Due to H
2amount less, therefore H
2less on the incorporation efficiency impact of In in quantum well, can ignore.
Under high pressure, in cavity, atom N increases, and N dividing potential drop increases, and in InGaN, the content of C and O impurity can corresponding minimizing, and the quality of InGaN quantum well can increase, and luminous intensity also can correspondingly increase; And low In incorporation efficiency makes up by the long speed etc. improving InGaN quantum well, thus ensure certain In incorporation efficiency.
S4, multiple quantum well active layer grows p-type electronic barrier layer, p-type GaN and P type contact layer successively.
Figure 2 shows that the C impurity content comparison diagram in the multi-quantum well active region of prior art and the present invention's growth, in figure, solid line is the C impurity content in the quantum well of prior art growth, and dotted line is the C impurity content in the quantum well of the technology of the present invention growth.In prior art, C impurity content is up to 3.5e17, and the multi-quantum well active region grown in technology of the present invention, the C impurity content in multi-quantum well active region is reduced to 6e16, and compared to existing technology, C impurity content reduces more than 80%.
The present invention still has numerous embodiments, all employing equivalents or equivalent transformation and all technical schemes formed, and all drops within protection scope of the present invention.
Claims (2)
1. can improve an epitaxial structure preparation method for LED luminance, described preparation method comprises the following steps:
S1, in a hydrogen atmosphere, high-temperature process substrate;
S2, in GaN layer and the n-type GaN layer of the substrate surface processed successively grown buffer layer, undoped;
S3, n-type GaN layer periodically grows at least two-layer multiple quantum well active layer, and described multiple quantum well active layer comprises quantum well layer and barrier layer;
S4, multiple quantum well active layer grows p-type electronic barrier layer, p-type GaN layer and P type contact layer successively;
It is characterized in that: in described S3, the growth conditions of multiple quantum well active layer is, temperature is 650-900 DEG C, and pressure is 500-1000 Torr, and keeps passing into hydrogen in the growth of described quantum well layer, and the hydrogen flowing quantity passed into is 0-200 sccm.
2. a kind of epitaxial structure preparation method improving LED luminance according to claim 1, is characterized in that: in described S3, multiple quantum well active layer growth comprises the steps:
S31, passes into hydrogen in nitrogen atmosphere, and grow the InGaN quantum well layer that first thickness is 1-5nm, described nitrogen flow is 20-70 L/min, and the hydrogen flowing quantity passed into is 0-200 sccm;
S32, on first the InGaN quantum well layer grown, continued growth thickness is the barrier layer of 3-25nm, and barrier layer grows under pure hydrogen, pure nitrogen gas or nitrogen and hydrogen mixture atmosphere, and described total gas couette is 20-70 L/min;
S33, repeats S31, S32 step growth multiple quantum well active layer.
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| CN201510061076.XA CN104638075B (en) | 2015-02-06 | 2015-02-06 | A kind of epitaxial structure preparation method for improving LED luminance |
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| CN104638075A true CN104638075A (en) | 2015-05-20 |
| CN104638075B CN104638075B (en) | 2017-07-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244424A (en) * | 2015-11-03 | 2016-01-13 | 湘能华磊光电股份有限公司 | Epitaxial growth method for improving luminous efficiency of LED (Light Emitting Diode) device |
| CN109326691A (en) * | 2018-08-31 | 2019-02-12 | 华灿光电（浙江）有限公司 | A kind of manufacturing method of LED epitaxial slice |
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| US20030153168A1 (en) * | 2002-01-31 | 2003-08-14 | Yoshihiko Tsuchida | 3-5 Group compound semiconductor, process for producing the same, and compound semiconductor element using the same |
| CN102738325A (en) * | 2012-07-17 | 2012-10-17 | 大连理工常州研究院有限公司 | Metal substrate vertical GaN-based LED (Light-Emitting Diode) chip and manufacturing method thereof |
| CN102769078A (en) * | 2012-07-13 | 2012-11-07 | 合肥彩虹蓝光科技有限公司 | Method for manufacturing high-growth-rate LED (light-emitting diode) with P-type GaN structure |
| CN103390705A (en) * | 2013-07-24 | 2013-11-13 | 广州金鉴检测科技有限公司 | Method of controlling epitaxial growth of thickness of membrane of quantum well |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030153168A1 (en) * | 2002-01-31 | 2003-08-14 | Yoshihiko Tsuchida | 3-5 Group compound semiconductor, process for producing the same, and compound semiconductor element using the same |
| CN102769078A (en) * | 2012-07-13 | 2012-11-07 | 合肥彩虹蓝光科技有限公司 | Method for manufacturing high-growth-rate LED (light-emitting diode) with P-type GaN structure |
| CN102738325A (en) * | 2012-07-17 | 2012-10-17 | 大连理工常州研究院有限公司 | Metal substrate vertical GaN-based LED (Light-Emitting Diode) chip and manufacturing method thereof |
| CN103390705A (en) * | 2013-07-24 | 2013-11-13 | 广州金鉴检测科技有限公司 | Method of controlling epitaxial growth of thickness of membrane of quantum well |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244424A (en) * | 2015-11-03 | 2016-01-13 | 湘能华磊光电股份有限公司 | Epitaxial growth method for improving luminous efficiency of LED (Light Emitting Diode) device |
| CN105244424B (en) * | 2015-11-03 | 2017-07-18 | 湘能华磊光电股份有限公司 | A kind of epitaxial growth method for improving LED component light efficiency |
| CN109326691A (en) * | 2018-08-31 | 2019-02-12 | 华灿光电（浙江）有限公司 | A kind of manufacturing method of LED epitaxial slice |
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