CN104638056A - Cleaning method for removing metallic contaminations before diffusion of polycrystalline silicon wafers - Google Patents
Cleaning method for removing metallic contaminations before diffusion of polycrystalline silicon wafers Download PDFInfo
- Publication number
- CN104638056A CN104638056A CN201310569505.5A CN201310569505A CN104638056A CN 104638056 A CN104638056 A CN 104638056A CN 201310569505 A CN201310569505 A CN 201310569505A CN 104638056 A CN104638056 A CN 104638056A
- Authority
- CN
- China
- Prior art keywords
- cleaning
- silicon wafers
- pure water
- cleaning method
- volume fraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004140 cleaning Methods 0.000 title claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 14
- 238000009792 diffusion process Methods 0.000 title claims abstract description 13
- 235000012431 wafers Nutrition 0.000 title abstract 8
- 238000011109 contamination Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a cleaning method for removing metallic contaminations before diffusion of polycrystalline silicon wafers. A slot type cleaning process is added between a cleaning and texturing process and a diffusing process. The cleaning method comprises the following specific steps of firstly, preliminarily cleaning silicon wafers which cannot be diffused in time after being textured by using pure water; secondly, cleaning the preliminarily cleaned silicon wafers by using HCl solution with the volume fraction of 1-5%; thirdly, continuously cleaning the silicon wafers twice by using pure water; fourthly, cleaning the silicon wafers cleaned by the pure water by using HF solution with the volume fraction of 1-3%; and finally continuously cleaning the silicon wafers twice by using pure water and diffusing the silicon wafers. The cleaning method has the advantages that by the technical scheme, short-circuit current in electrical performance parameters of polycrystalline silicon solar cells has 20-40 milliamperes of gain, and the photoelectric conversion efficiency has 0.05-0.1% of gain.
Description
Technical field
The present invention relates to crystal silicon solar batteries sheet and manufacture field, relating to a kind of for removing metal impurities cleaning method before polysilicon chip diffusion particularly.
Background technology
In preparation technology's flow process of crystal silicon solar batteries sheet, it is first the absorption reducing surface reflectivity, increase light by preparing matte at silicon chip surface.In actual production process, often there will be that the silicon chip after making herbs into wool is exposed does not enter diffusion technology in atmosphere in time, cause silicon chip surface to be oxidized and stain phenomenon.In addition, the inert metal ion that naked silicon chip is self-contained does not clean up phenomenon completely in cleaning and texturing technique.Above-mentioned phenomenon all can affect the unit for electrical property parameters of polysilicon solar battery slice.
Summary of the invention
The object of this invention is to provide a kind of for removing metal impurities cleaning method before polysilicon chip diffusion, reaching the object can stablized sustainable volume production, improve short circuit current and photoelectric conversion efficiency.
In order to solve the problem, the technical solution that the present invention adopts is to provide a kind of for removing metal impurities cleaning method before polysilicon chip diffusion, and between diffusion twice technique, increase one slot type cleaning at cleaning and texturing, concrete technology flow process is as follows:
(1) silicon chip failing to enter in time diffusing procedure after making herbs into wool is placed in pure water tentatively to clean;
(2) silicon chip after preliminary cleaning being placed in volume fraction is that the HCl solution of 1-5% cleans;
(3) then doublely to clean through pure water;
(4) silicon chip cleaned through pure water being placed in volume fraction is that the HF solution of 1-3% cleans;
(5) finally double through pure water cleaning, enter diffusing procedure.
The invention has the beneficial effects as follows that the unit for electrical property parameters short circuit currents of polysilicon solar battery slice has the gain of 20-40 milliampere, and photoelectric conversion efficiency has the gain of 0.05-0.1% by adopting technique scheme.
Accompanying drawing explanation
Fig. 1 concrete technology flow process for removing metal impurities cleaning method before polysilicon chip diffusion provided by the invention.
Embodiment
Below according to the technical solution for removing metal impurities cleaning method before polysilicon chip diffusion provided by the invention, specific embodiments is below adopted to be described further.The present embodiment is carried out under the condition that the technique of making herbs into wool, diffusion, etching, PECVD, each procedure of silk screen printing is identical with former technique, and wherein A represents former process program, and B represents technical scheme provided by the invention.Embodiment is as follows:
(1) silicon chip failing to enter in time diffusing procedure after making herbs into wool is placed in pure water tentatively to clean;
(2) by tentatively cleaning after silicon chip be placed in volume fraction be 2% HCl solution clean, reaction temperature is normal temperature;
(3) then doublely to clean through pure water;
(4) silicon chip cleaned through pure water is placed in volume fraction be 2.5% HF solution clean, reaction temperature is normal temperature;
(5) finally double through pure water cleaning, enter diffusion, etching, PECVD, silkscreen process successively.
The unit for electrical property parameters of the polysilicon solar battery slice adopting present embodiment to prepare is as shown in the table:
Experimental result shows: in the unit for electrical property parameters of the polysilicon solar battery slice adopting technical scheme B provided by the invention to prepare, short circuit electricity improves 39 milliamperes, and photoelectric conversion efficiency improves 0.06%.
Claims (1)
1., for removing a metal impurities cleaning method before polysilicon chip diffusion, between diffusion twice technique, increase one slot type cleaning at cleaning and texturing, concrete technology flow process is as follows:
(1) silicon chip failing to enter in time diffusing procedure after making herbs into wool is placed in pure water tentatively to clean;
(2) silicon chip after preliminary cleaning being placed in volume fraction is that the HCl solution of 1-5% cleans;
(3) then doublely to clean through pure water;
(4) silicon chip cleaned through pure water being placed in volume fraction is that the HF solution of 1-3% cleans;
(5) finally double through pure water cleaning, enter diffusing procedure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310569505.5A CN104638056A (en) | 2013-11-13 | 2013-11-13 | Cleaning method for removing metallic contaminations before diffusion of polycrystalline silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310569505.5A CN104638056A (en) | 2013-11-13 | 2013-11-13 | Cleaning method for removing metallic contaminations before diffusion of polycrystalline silicon wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104638056A true CN104638056A (en) | 2015-05-20 |
Family
ID=53216565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310569505.5A Pending CN104638056A (en) | 2013-11-13 | 2013-11-13 | Cleaning method for removing metallic contaminations before diffusion of polycrystalline silicon wafers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104638056A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105327887A (en) * | 2015-10-28 | 2016-02-17 | 江苏辉伦太阳能科技有限公司 | Chain type device for removing and recycling metal impurities through cyclic utilization of cleaning fluid |
-
2013
- 2013-11-13 CN CN201310569505.5A patent/CN104638056A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105327887A (en) * | 2015-10-28 | 2016-02-17 | 江苏辉伦太阳能科技有限公司 | Chain type device for removing and recycling metal impurities through cyclic utilization of cleaning fluid |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150520 |