CN104635436A - Temperature variable curtain-like developing apparatus - Google Patents

Temperature variable curtain-like developing apparatus Download PDF

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Publication number
CN104635436A
CN104635436A CN201310554878.5A CN201310554878A CN104635436A CN 104635436 A CN104635436 A CN 104635436A CN 201310554878 A CN201310554878 A CN 201310554878A CN 104635436 A CN104635436 A CN 104635436A
Authority
CN
China
Prior art keywords
tentiform
nozzle
temperature
developing apparatus
communicated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310554878.5A
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Chinese (zh)
Inventor
魏猛
胡延兵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenyang Solidtool Co Ltd
Shenyang Xinyuan Microelectronics Equipment Co Ltd
Original Assignee
Shenyang Xinyuan Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenyang Xinyuan Microelectronics Equipment Co Ltd filed Critical Shenyang Xinyuan Microelectronics Equipment Co Ltd
Priority to CN201310554878.5A priority Critical patent/CN104635436A/en
Publication of CN104635436A publication Critical patent/CN104635436A/en
Pending legal-status Critical Current

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Abstract

The present invention belongs to developing treatment equipment for obtaining a photoresist pattern on a semiconductor wafer, particularly to a temperature variable curtain-like developing apparatus, which comprises a curtain-like nozzle, a semiconductor temperature control module and a circulating water heat sink, wherein the semiconductor temperature control module is arranged on the curtain-like nozzle and is connected with a temperature sensor arranged in the curtain-like nozzle, and the circulating water heat sink is arranged on the semiconductor temperature control module. According to the present invention, the developing treatment is performed on the resist membrane being subjected to the exposure treatment on the substrate, a developing agent layer is coated on the wafer surface in a spray manner, the sprayed liquid is subjected to the accurate temperature control at the nozzle body when the developing agent is coated, the temperature can be set according to the user requirement, and the shape of the sprayed liquid is the curtain shape.

Description

Variable temperature tentiform developing apparatus
Technical field
The invention belongs to the equipment of the development treatment obtaining photoetching offset plate figure on the semiconductor wafer, specifically a kind of variable temperature tentiform developing apparatus.
Background technology
At present, known developing cell forms primarily of developer arm, top cleaning arm, protection cup, discharge opeing room, hydro-extractor part etc.Developer arm is fixed developing nozzle to be come on wafer (hereinafter referred to as wafer) by driving and develop, top cleaning arm is fixed washer jet and clean by being driven on wafer.During development, due to technological requirement, developer solution requires to be stabilized in a certain temperature spot, and in production in the past, we lean against the heat-exchange system installing a set of complexity in development pipeline additional to realize.Developer solution is sprayed at crystal column surface, and wafer will soak wherein by liquid level.Complete above-mentioned functions, must buy a set of temperature conditioning unit and a set of heat exchange unit, cost is high simultaneously, volume is large, and during placement, floor area is many, and the pipeline controlling developing nozzle is complicated, very high to the requirement safeguarded, it is very inconvenient that problem once occur searches maintenance.Most development is immersion type development, and most of developing nozzle will reach the immersion of wafer useful area, all needs a large amount of developer solutions and wastes very long a period of time, and neither economic productivity aspect is also difficult to improve.
Summary of the invention
For the problems referred to above, the object of the present invention is to provide a kind of variable temperature tentiform developing apparatus.Be placed in by this device in developing cell, make complicated development temperature control system become simple and practical, developer solution can be covered crystal column surface fast without dead band by tentiform hydrojet.
To achieve these goals, the present invention is by the following technical solutions:
A kind of variable temperature tentiform developing apparatus, comprise tentiform nozzle, semiconductor temperature-control module, recirculated water heat radiator, temperature sensor and temperature controller, wherein semiconductor temperature-control module installation to be connected in the outside of tentiform nozzle with the temperature controller being arranged at tentiform nozzle exterior, described recirculated water heat radiator is arranged in semiconductor temperature-control module, and described temperature sensor is arranged at the inside of tentiform nozzle and is connected with temperature controller.
Described tentiform nozzle comprises nozzle body and nozzle cover, wherein nozzle cover is arranged at the top of nozzle body, the section structure and jet hole that form tentiform sprinkling is provided with between described nozzle body and nozzle cover, described jet hole is communicated with section structure, and described nozzle cover is provided with the water supply connector be communicated with described section structure.
Described section structure comprises tank and overflow portion, wherein tank be arranged at nozzle body upper surface on and be communicated with the water supply connector on nozzle cover, the upper surface side of described nozzle body is provided with a slope, gap is left between this slope and described nozzle cover, form described overflow portion, the two ends of described overflow portion are communicated with described jet hole with tank respectively.
Water proof baffle plate is provided with in described tank, tank is divided into two chambers by described water proof baffle plate, the chamber be wherein communicated with the water supply connector on nozzle cover is for intaking buffer portion, another chamber is retaining part, and the bottom of described water proof baffle plate is provided with water inlet buffer portion and the partially communicating conducting structure of retaining.
Described tank is U-type groove.Described jet hole is the micro-mouth of straight line.Effective spray width of the developer solution that described jet hole sprays is for being more than or equal to brilliant diameter of a circle, and the walking path of developing nozzle is that the vertical scan direction of tentiform water curtain and crystal round fringes tangent line is advanced, and sweep limit is for being greater than brilliant diameter of a circle.The water inlet of described recirculated water heat radiator and water delivering orifice are arranged at the same side of recirculated water heat radiator.
Advantage of the present invention and beneficial effect are:
1. the present invention is improved vaporific for tradition with column spin coating mode.Because the contact distance of nozzle and wafer is very little so the development liquid measure of waste can be adjusted to very little in the process sprayed.Nozzle of the present invention self is with semiconductor temperature-control module, and do not need traditional complicated temperature control system, cost is saved huge, fault detect and eliminating are convenient in modular design, can save a lot of maintenance process and time.
2. in the present invention, temperature conditioning unit is positioned at nozzle body and can controls developer temperatur more accurately, meets the technological requirement that improves constantly, improves product quality.
Accompanying drawing explanation
Fig. 1 is cross-sectional view of the present invention;
Fig. 2 is the upward view of Fig. 1;
Fig. 3 is the partial enlarged drawing in Fig. 2;
Fig. 4 is front view of the present invention;
Fig. 5 is the vertical view of Fig. 4;
Fig. 6 is the side view of Fig. 4;
Fig. 7 is the structural representation of tentiform nozzle of the present invention.
Wherein: 1 is tentiform nozzle, 2 is conductor temperature control module, and 3 is recirculated water heat radiator, 4 is jet hole, 5 is water inlet, and 6 is water delivering orifice, and 7 is water supply connector, 101 is nozzle body, 102 is nozzle cover, and 103 is water proof baffle plate, and 105 is water inlet buffer portion, 106 is retaining part, and 107 is overflow portion.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
As shown in Figures 1 to 6, the present invention includes and comprise tentiform nozzle 1, semiconductor temperature-control module 2, recirculated water heat radiator 3, temperature sensor and temperature controller, wherein semiconductor temperature-control module 2 is arranged at the upper surface of tentiform nozzle 1, and described recirculated water heat radiator 3 is arranged in semiconductor temperature-control module 2.Namely tentiform nozzle 1 upper surface is close in the side of conductor temperature control module 2, and opposite side is close to recirculated water heat radiator 3.Described temperature sensor is arranged at the inside of tentiform nozzle 1, and described temperature controller is arranged at the outside of tentiform nozzle 1, and described temperature controller is connected with temperature sensor and semiconductor temperature-control module 2 respectively, forms closed-loop control system.The semiconductor temperature-control module 2 that the temperature of described tentiform nozzle 1 is pasted by its back accurately controls, described semiconductor temperature-control module 2, and the heat produced in its control temperature process is taken away by the recirculated water heat radiator 3 at its back.In the present invention, temperature controller and semiconductor temperature-control module 2 are prior art.
As shown in Figure 7, described tentiform nozzle 1 comprises nozzle body 101 and nozzle cover 102, wherein nozzle cover 102 is arranged at the top of nozzle body 101, the section structure and jet hole 4 that form tentiform sprinkling is provided with between described nozzle body 101 and nozzle cover 102, described jet hole 4 is communicated with section structure, and described nozzle cover 102 is provided with the water supply connector 7 be communicated with described section structure.Described section structure comprises tank and overflow portion 107, wherein tank be arranged at nozzle body 101 upper surface on and be communicated with the water supply connector 7 on nozzle cover 102, the upper surface side of described nozzle body 101 is provided with a slope, gap is left between this slope and described nozzle cover 102, form described overflow portion 107, the two ends of described overflow portion 107 are communicated with described jet hole 4 with tank respectively.
Water proof baffle plate 103 is provided with in described tank, tank is divided into two chambers by described water proof baffle plate 103, the chamber be wherein communicated with the water supply connector 7 on nozzle cover 102 is for intaking buffer portion 105, another chamber is retaining part 106, and the bottom of described water proof baffle plate 103 is provided with the conducting structure be communicated with retaining part 106 by water inlet buffer portion 105.Described tank is U-type groove.Described jet hole 4 is the micro-mouth of straight line, and the liquid form that described jet hole 4 sprays is tentiform and coverage is more than or equal to processed brilliant diameter of a circle.
Principle of work of the present invention is:
The present invention implements development treatment to the resist film of the exposure-processed implemented on substrate, sprays one deck developer on a surface of the wafer.When painting developer, the wafer through gluing and exposure-processed is attracted on the vacuum cup on hydro-extractor top of developing cell.Tentiform nozzle is fixedly placed on bracket, and bracket is connected with lift drive mechanism and horizontal drive mechanism respectively.Sprinkling wafer being carried out to developer solution is driven by Liang Zu mechanism.Developer solution flows into water inlet buffer portion 105 through water supply connector 7, because water proof baffle plate 103 is bottom conducting structure, a U-shaped linker structure is formed, because the effect current of water proof baffle plate 103 are a kind of steady state (SS) in retaining part 106 at water inlet buffer portion 105 and retaining part 106.Along with the increase developer solution of development liquid measure can flow out in overflow portion 107, according to the relation of flow, pressure, flow velocity, current can form one group of water curtain at below jet hole 4 place of overflow portion 107.Effective spray width of developer solution is the effective diameter being more than or equal to wafer, and the walking path of developing nozzle is that the vertical scan direction of tentiform water curtain and crystal round fringes tangent line is advanced, and sweep limit is the effective diameter being greater than wafer.The distance of nozzle distance wafer can adjust.At this moment the developer solution of tentiform can be sprayed at crystal column surface, developer solution is temporary in crystal column surface and forms moisture film under capillary effect, form developer solution to the immersion of wafer, after reaching required development soak time, developer solution can depart from crystal column surface under lower motor drives the centrifugal action of wafer High Rotation Speed, so namely completes the process of developing nozzle to wafer spray developing liquid.
Because developer solution is when flowing through tentiform nozzle 1, temperature under conductor temperature control module 2, recirculated water heat radiator 3 act on by constant at a default temperature spot, be then sprayed on crystal column surface.Stationary temperature is realized by conductor temperature control module 2 and recirculated water heat radiator 3, because tentiform nozzle 1 upper surface is close in the side of conductor temperature control module 2, opposite side is close to recirculated water heat radiator 3.Conductor temperature control module 2 forms a closed-loop control system under the effect of temperature controller and temperature sensor, temperature sensor is docile and obedient in tentiform nozzle 1, real-time control be the actual temperature of tentiform nozzle 1, and transformation temperature is delivered to temperature controller, temperature controller applies corresponding state signal according to design temperature demand to temperature control modules 2 (semiconductor chilling plate) after being calculated by the temperature signal transmitted.
Conductor temperature control module 2 operationally can bring a large amount of heats, and its heat can be flowed out by recirculated water heat radiator 3, and the heat energy of recirculated water heat radiator 3 is scattered and disappeared by plant circulation water.Principle of work is that recirculated water enters through water delivering orifice 6 by water inlet 5 and flows out, and takes away the heat in recirculated water heat radiator 3 in this process, to meet the temperature requirement of tentiform nozzle 1.The present invention is when painting developer, and liquid is through accurate temperature controller in tentiform nozzle 1, and temperature can according to user's request sets itself, and the shape of the liquid sprayed is tentiform.

Claims (8)

1. a variable temperature tentiform developing apparatus, it is characterized in that: comprise tentiform nozzle (1), semiconductor temperature-control module (2), recirculated water heat radiator (3), temperature sensor and temperature controller, wherein semiconductor temperature-control module (2) is arranged at the outside of tentiform nozzle (1) and is connected with the temperature controller being arranged at tentiform nozzle (1) outside, described recirculated water heat radiator (3) is arranged in semiconductor temperature-control module (2), and described temperature sensor is arranged at the inside of tentiform nozzle (1) and is connected with temperature controller.
2. by variable temperature tentiform developing apparatus according to claim 1, it is characterized in that: described tentiform nozzle (1) comprises nozzle body (101) and nozzle cover (102), wherein nozzle cover (102) is arranged at the top of nozzle body (101), the section structure and jet hole (4) that form tentiform sprinkling is provided with between described nozzle body (101) and nozzle cover (102), described jet hole (4) is communicated with section structure, and described nozzle cover (102) is provided with the water supply connector (7) be communicated with described section structure.
3. by variable temperature tentiform developing apparatus according to claim 2, it is characterized in that: described section structure comprises tank and overflow portion (107), wherein tank is arranged on the upper surface of nozzle body (101), and be communicated with the water supply connector (7) on nozzle cover (102), the upper surface side of described nozzle body (101) is provided with a slope, gap is left between this slope and described nozzle cover (102), form described overflow portion (107), the two ends of described overflow portion (107) are communicated with described jet hole (4) with tank respectively.
4. by variable temperature tentiform developing apparatus according to claim 3, it is characterized in that: in described tank, be provided with water proof baffle plate (103), tank is divided into two chambers by described water proof baffle plate (103), the chamber be wherein communicated with the water supply connector (7) on nozzle cover (102) is for intaking buffer portion (105), another chamber is retaining part (106), and the bottom of described water proof baffle plate (103) is provided with conducting structure water inlet buffer portion (105) be communicated with retaining part (106).
5., by the variable temperature tentiform developing apparatus described in claim 3 or 4, it is characterized in that: described tank is U-type groove.
6., by the variable temperature tentiform developing apparatus described in Claims 2 or 3, it is characterized in that: described jet hole (4) is the micro-mouth of straight line.
7. by variable temperature tentiform developing apparatus according to claim 6, it is characterized in that: effective spray width of the developer solution that described jet hole (4) sprays is for being more than or equal to brilliant diameter of a circle, the walking path of developing nozzle is that the vertical scan direction of tentiform water curtain and crystal round fringes tangent line is advanced, and sweep limit is for being greater than brilliant diameter of a circle.
8., by variable temperature tentiform developing apparatus according to claim 1, it is characterized in that: the water inlet (5) of described recirculated water heat radiator (3) and water delivering orifice (6) are arranged at the same side of recirculated water heat radiator (3).
CN201310554878.5A 2013-11-07 2013-11-07 Temperature variable curtain-like developing apparatus Pending CN104635436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310554878.5A CN104635436A (en) 2013-11-07 2013-11-07 Temperature variable curtain-like developing apparatus

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Application Number Priority Date Filing Date Title
CN201310554878.5A CN104635436A (en) 2013-11-07 2013-11-07 Temperature variable curtain-like developing apparatus

Publications (1)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104635437A (en) * 2013-11-07 2015-05-20 沈阳芯源微电子设备有限公司 Curtain-like developing nozzle

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2721248Y (en) * 2004-09-01 2005-08-31 李德祥 Overflow duct of water curtain type dope room
CN101088624A (en) * 2006-06-15 2007-12-19 株式会社细美事 Narrow slit nozzle and liquid medicine coating apparatus with same
KR20090055993A (en) * 2007-11-29 2009-06-03 세메스 주식회사 Chemical-coating apparatus having slit nozzle
CN101687206A (en) * 2007-07-02 2010-03-31 杜尔系统有限责任公司 Coating equipment and coating process with constant directing air temperature
CN101727009A (en) * 2008-10-21 2010-06-09 东京毅力科创株式会社 Liquid processing apparatus and liquid processing method
CN101992155A (en) * 2009-08-06 2011-03-30 诺信公司 Spraying nozzle, spraying method and internal volume control valve
CN202803469U (en) * 2012-08-13 2013-03-20 周裕佳 Waterfall water outlet device for overhead shower head

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2721248Y (en) * 2004-09-01 2005-08-31 李德祥 Overflow duct of water curtain type dope room
CN101088624A (en) * 2006-06-15 2007-12-19 株式会社细美事 Narrow slit nozzle and liquid medicine coating apparatus with same
CN101687206A (en) * 2007-07-02 2010-03-31 杜尔系统有限责任公司 Coating equipment and coating process with constant directing air temperature
KR20090055993A (en) * 2007-11-29 2009-06-03 세메스 주식회사 Chemical-coating apparatus having slit nozzle
CN101727009A (en) * 2008-10-21 2010-06-09 东京毅力科创株式会社 Liquid processing apparatus and liquid processing method
CN101992155A (en) * 2009-08-06 2011-03-30 诺信公司 Spraying nozzle, spraying method and internal volume control valve
CN202803469U (en) * 2012-08-13 2013-03-20 周裕佳 Waterfall water outlet device for overhead shower head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104635437A (en) * 2013-11-07 2015-05-20 沈阳芯源微电子设备有限公司 Curtain-like developing nozzle

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