CN1046350C - 半导体器件的加速老化的检测系统和方法 - Google Patents

半导体器件的加速老化的检测系统和方法 Download PDF

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Publication number
CN1046350C
CN1046350C CN93114427A CN93114427A CN1046350C CN 1046350 C CN1046350 C CN 1046350C CN 93114427 A CN93114427 A CN 93114427A CN 93114427 A CN93114427 A CN 93114427A CN 1046350 C CN1046350 C CN 1046350C
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CN
China
Prior art keywords
semiconductor device
light
current
testing
emitting diodes
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CN93114427A
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English (en)
Chinese (zh)
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CN1090053A (zh
Inventor
约翰·A·爱德蒙
道格拉斯·A·阿司布利
卡温·H·卡特
道格拉斯·G·华尔兹
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Cree Huizhou Solid State Lighting Co Ltd
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Cree Research Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN93114427A 1992-10-13 1993-10-13 半导体器件的加速老化的检测系统和方法 Expired - Lifetime CN1046350C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/959,714 US5381103A (en) 1992-10-13 1992-10-13 System and method for accelerated degradation testing of semiconductor devices
US959,714 1992-10-13

Publications (2)

Publication Number Publication Date
CN1090053A CN1090053A (zh) 1994-07-27
CN1046350C true CN1046350C (zh) 1999-11-10

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Family Applications (1)

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CN93114427A Expired - Lifetime CN1046350C (zh) 1992-10-13 1993-10-13 半导体器件的加速老化的检测系统和方法

Country Status (10)

Country Link
US (1) US5381103A (OSRAM)
EP (1) EP0664889B1 (OSRAM)
JP (1) JP2863633B2 (OSRAM)
KR (1) KR100252775B1 (OSRAM)
CN (1) CN1046350C (OSRAM)
AT (1) ATE166725T1 (OSRAM)
AU (1) AU5141593A (OSRAM)
DE (1) DE69318845T2 (OSRAM)
TW (1) TW237566B (OSRAM)
WO (1) WO1994009378A1 (OSRAM)

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US9091721B2 (en) 2013-07-15 2015-07-28 Institute Of Semiconductors, Chinese Academy Of Sciences Multi-functional online testing system for semiconductor light-emitting devices or modules and method thereof

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US8294484B1 (en) * 2007-05-31 2012-10-23 Finisar Corporation Pulse voltage age acceleration of a laser for determining reliability
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WO2010095809A2 (ko) * 2009-02-20 2010-08-26 (주)큐엠씨 엘이디 칩 테스트장치
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CN101672888B (zh) * 2009-09-22 2013-05-29 上海宏力半导体制造有限公司 二极管反向电容的测量方法
US8476918B2 (en) * 2010-04-28 2013-07-02 Tsmc Solid State Lighting Ltd. Apparatus and method for wafer level classification of light emitting device
TWM430614U (en) * 2011-12-21 2012-06-01 Youngtek Electronics Corp Fiber optic light guiding top cover structure
CN102608509B (zh) * 2011-12-22 2015-06-03 中国科学院半导体研究所 对发光二极管进行光电热老化综合检测的方法
US8907686B2 (en) 2012-02-02 2014-12-09 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for accelerating device degradation and diagnosing the physical changes of the device during the degradation process
CN102628735A (zh) * 2012-03-15 2012-08-08 威力盟电子(苏州)有限公司 Led的耐热测试装置以及耐热测试方法
CN102779208B (zh) * 2012-06-19 2014-11-05 北京航空航天大学 基于相对熵的序贯加速退化试验优化设计方法
CN104142461B (zh) * 2013-05-09 2017-05-17 中芯国际集成电路制造(上海)有限公司 半导体器件老化测试方法
JP6075257B2 (ja) * 2013-09-25 2017-02-08 富士電機株式会社 炭化珪素半導体装置の検査方法及び検査装置
US20170038425A1 (en) * 2015-08-03 2017-02-09 Fisher Controls International Llc Apparatus and methods to detect semiconductor device degradation due to radiation exposure
JP6692646B2 (ja) * 2016-01-19 2020-05-13 スタンレー電気株式会社 半導体発光素子および該素子構成を含むウェハにおける品質管理方法
US10302496B2 (en) 2016-02-09 2019-05-28 Nasa Solutions, Llc Method and apparatus for determining presence and operation of a component in a printed circuit board
US10319648B2 (en) * 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
CN107093651B (zh) * 2017-05-18 2023-08-04 江西比太科技有限公司 太阳能硅片二合一自动上下料设备
JP7013685B2 (ja) * 2017-06-08 2022-02-01 富士電機株式会社 炭化珪素半導体装置の選別方法
US10612978B2 (en) * 2018-03-01 2020-04-07 International Business Machines Corporation Light emitting diode color resolution testing
US11125780B2 (en) 2018-10-18 2021-09-21 International Business Machines Corporation Test probe assembly with fiber optic leads and photodetectors
US11119148B2 (en) 2018-10-18 2021-09-14 International Business Machines Corporation Test probe assembly with fiber optic leads and photodetectors for testing semiconductor wafers
CN109521348B (zh) * 2018-11-12 2020-12-29 重庆大学 一种直流断路器用igbt模块的可靠性测试及寿命评估方法
JP7422731B2 (ja) * 2019-02-27 2024-01-26 ヌヴォトンテクノロジージャパン株式会社 光源装置
CN113466649B (zh) * 2021-06-29 2022-10-25 西安交通大学 一种判断浪涌电流测试中SiC MOSFET失效原因的方法
CN114664704B (zh) * 2022-03-18 2024-10-29 东莞市中麒光电技术有限公司 Led芯片筛选方法及显示屏

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9091721B2 (en) 2013-07-15 2015-07-28 Institute Of Semiconductors, Chinese Academy Of Sciences Multi-functional online testing system for semiconductor light-emitting devices or modules and method thereof

Also Published As

Publication number Publication date
ATE166725T1 (de) 1998-06-15
CN1090053A (zh) 1994-07-27
US5381103A (en) 1995-01-10
KR100252775B1 (ko) 2000-04-15
WO1994009378A1 (en) 1994-04-28
DE69318845D1 (de) 1998-07-02
TW237566B (OSRAM) 1995-01-01
EP0664889A1 (en) 1995-08-02
EP0664889B1 (en) 1998-05-27
AU5141593A (en) 1994-05-09
DE69318845T2 (de) 1998-11-05
JPH08502822A (ja) 1996-03-26
JP2863633B2 (ja) 1999-03-03

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Patentee before: Cree Research, Inc.

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