CN104630879A - Method for preparing black phosphorus monocrystal from high-purity red phosphorus under atmospheric pressure - Google Patents

Method for preparing black phosphorus monocrystal from high-purity red phosphorus under atmospheric pressure Download PDF

Info

Publication number
CN104630879A
CN104630879A CN201510090509.4A CN201510090509A CN104630879A CN 104630879 A CN104630879 A CN 104630879A CN 201510090509 A CN201510090509 A CN 201510090509A CN 104630879 A CN104630879 A CN 104630879A
Authority
CN
China
Prior art keywords
phosphorus
black phosphorus
red phosphorus
purity red
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510090509.4A
Other languages
Chinese (zh)
Inventor
张芷铭
邱俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ANQING PERFECT CRYSTAL NEW MATERIAL Co Ltd
Original Assignee
ANQING PERFECT CRYSTAL NEW MATERIAL Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANQING PERFECT CRYSTAL NEW MATERIAL Co Ltd filed Critical ANQING PERFECT CRYSTAL NEW MATERIAL Co Ltd
Priority to CN201510090509.4A priority Critical patent/CN104630879A/en
Publication of CN104630879A publication Critical patent/CN104630879A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention provides a method for preparing black phosphorus monocrystal from high-purity red phosphorus under atmospheric pressure, which comprises the following steps: sufficiently mixing the raw material high-purity red phosphorus with AuSn and SnI4, sealing in a quartz tube, heating in a single-temperature-area furnace, keeping the temperature for some time, cooling to a certain temperature at a certain rate, and quickly cooling to obtain the black phosphorus monocrystal.

Description

High-purity red phosphorus is utilized to prepare the method for black phosphorus monocrystalline under a kind of normal pressure
Technical field
High-purity red phosphorus is utilized to prepare the method for black phosphorus monocrystalline under the present invention relates to a kind of normal pressure.
Background technology
Black phosphorus is the allotropic substance of the stable phosphorus of a kind of thermal property at normal temperatures and pressures, is normally under high pressure heated by white phosphorus and obtains.The laminate structure that the structure of black phosphorus and Graphene are very similar, and phonon, photon and electronics show the anisotropy of height in stratiform black phosphorus plane, make black phosphorus have important using value in fields such as Two-dimensional electron Infrared Opto-electronics.The preparation of monocrystal material, also referred to as the growth of crystal, is the reactant that the non-crystalline state of material, polycrystalline state maybe can be formed this material changes monocrystalline into process by the means of certain chemistry.The preparation method of monocrystalline usually can be divided into melt growth, solution growth and grow mutually.Melt growth method prepares the most frequently used and most important method of the monocrystalline of large single crystal and specified shape, has that fast growth, crystal grain are large, purity high.
Summary of the invention
In order to black phosphorus monocrystalline can be prepared safer, more easily, high-purity red phosphorus under the invention provides a kind of normal pressure, is utilized to prepare the method for black phosphorus monocrystalline.The technical solution adopted for the present invention to solve the technical problems is: with high-purity red phosphorus for starting material, with AuSn and SnI 4after abundant mixing, be together sealed in silica tube, be placed in the heating of single warm area stove and after constant temperature for some time, after being down to certain temperature with certain rate of temperature fall, more rapidly cooling obtains black phosphorus monocrystalline.
The invention has the beneficial effects as follows: compare traditional black phosphorus preparation method, former material is safer, operate easier, can carry out at ambient pressure.
Embodiment: the 1. SnI taking high-purity red phosphorus of 500mg, AuSn and 10mg of 364mg 4, fully to pour into after mixing in the one section of silica tube being about 12cm and to seal.
2. the silica tube of good seal is placed in single warm area stove, by the centre having one end of medicine to be placed on stove.
3. heat single warm area stove, within 10 hours, be warming up to 873K, and 873K constant temperature 24 hours.
4. with the rate of temperature fall of 40K/ hour, single warm area stove is cooled to 773K.
5. single warm area stove is down to normal temperature fast, takes out silica tube, black phosphorus monocrystalline can be obtained at the cold junction of silica tube.

Claims (3)

1. utilize high-purity red phosphorus to prepare a method for black phosphorus monocrystalline under normal pressure, it is characterized in that with high-purity red phosphorus, AuSn and SnI 4for starting material, in single warm area stove, obtain black phosphorus monocrystalline by series of steps such as heating, constant temperature, coolings.
2. utilize high-purity red phosphorus to prepare the method for black phosphorus monocrystalline under a kind of normal pressure according to claim 1, it is characterized in that the SnI of AuSn and 10mg of high-purity for 500mg red phosphorus, 364mg 4be sealed in the silica tube of 12 cm long.
3. utilize high-purity red phosphorus to prepare the method for black phosphorus monocrystalline under a kind of normal pressure according to claim 1, by series of steps such as heating, constant temperature, coolings in single warm area stove, single warm area stove is it is characterized in that to rise to 873K in 10 hours, constant temperature is down to normal temperature after cooling the temperature to 773K with 40K rate of temperature fall hourly after 24 hours fast, can obtain black phosphorus monocrystalline at the cold junction of silica tube.
CN201510090509.4A 2015-02-28 2015-02-28 Method for preparing black phosphorus monocrystal from high-purity red phosphorus under atmospheric pressure Pending CN104630879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510090509.4A CN104630879A (en) 2015-02-28 2015-02-28 Method for preparing black phosphorus monocrystal from high-purity red phosphorus under atmospheric pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510090509.4A CN104630879A (en) 2015-02-28 2015-02-28 Method for preparing black phosphorus monocrystal from high-purity red phosphorus under atmospheric pressure

Publications (1)

Publication Number Publication Date
CN104630879A true CN104630879A (en) 2015-05-20

Family

ID=53210112

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510090509.4A Pending CN104630879A (en) 2015-02-28 2015-02-28 Method for preparing black phosphorus monocrystal from high-purity red phosphorus under atmospheric pressure

Country Status (1)

Country Link
CN (1) CN104630879A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105116034A (en) * 2015-09-08 2015-12-02 无锡百灵传感技术有限公司 Sensor based on black phosphorus electrode and preparation method of sensor
CN105133009A (en) * 2015-09-23 2015-12-09 清华大学 Preparation method for orthorhombic crystal system black phosphorus monocrystalline
CN105460910A (en) * 2015-11-19 2016-04-06 浙江大学 A constant-temperature large-scale preparing method of belt-shaped black phosphorus
CN105565289A (en) * 2016-01-29 2016-05-11 西北大学 Black phosphorus and phosphinidene preparing methods
CN105603517A (en) * 2016-01-11 2016-05-25 上海交通大学 Method for growing monocrystal black phosphorus based on solid-source chemical vapor deposition method
WO2017020672A1 (en) * 2015-08-06 2017-02-09 王贝贝 Processing method of etching black phosphorus two-dimensional material using oxygen plasma
CN106498492A (en) * 2016-11-01 2017-03-15 南京工业大学 Method for preparing orthorhombic black phosphorus single crystal
CN106744754A (en) * 2016-11-14 2017-05-31 深圳大学 A kind of red phosphorus preprocess method prepared for black phosphorus
CN107188141A (en) * 2017-07-10 2017-09-22 太原理工大学 A kind of method that low temperature batch synthesizes black phosphorus nanometer sheet material
CN107285289A (en) * 2016-04-01 2017-10-24 中国科学院苏州纳米技术与纳米仿生研究所 Black phosphorus crystal, its preparation method and application with high photoelectric respone rate
CN108059138A (en) * 2017-12-11 2018-05-22 昆明理工大学 A kind of preparation method of high-purity black phosphorus
CN108538707A (en) * 2018-03-05 2018-09-14 南京航空航天大学 A kind of two dimension black phosphorus crystal preparation method
JP2019516650A (en) * 2016-04-01 2019-06-20 中国科学院蘇州納米技術与納米▲ファン▼生研究所 Black phosphorus crystal having high photoelectric response ratio, two-dimensional black phosphorus PN junction, method for producing the same and application thereof
WO2020262035A1 (en) * 2019-06-27 2020-12-30 堺化学工業株式会社 Production method for black phosphorus-containing composition and black phosphorus-containing composition
CN115522260A (en) * 2022-10-31 2022-12-27 陕西科技大学 Preparation method of high-stability black phosphorus single crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102491294A (en) * 2011-12-01 2012-06-13 东北师范大学 Method for preparing black phosphorus of negative electrode materials of high-capacity lithium-ion battery

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102491294A (en) * 2011-12-01 2012-06-13 东北师范大学 Method for preparing black phosphorus of negative electrode materials of high-capacity lithium-ion battery

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MARIAN CRISTIAN STAN, ET AL.: "Puzzling out the origin of the electrochemical activity of black P as a negative electrode material for lithium-ion batteries", 《JOURNAL OF MATERIALS CHEMISTRY A》 *

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017020672A1 (en) * 2015-08-06 2017-02-09 王贝贝 Processing method of etching black phosphorus two-dimensional material using oxygen plasma
CN105116034A (en) * 2015-09-08 2015-12-02 无锡百灵传感技术有限公司 Sensor based on black phosphorus electrode and preparation method of sensor
CN105133009B (en) * 2015-09-23 2017-09-26 清华大学 A kind of preparation method of rhombic system black phosphorus monocrystalline
CN105133009A (en) * 2015-09-23 2015-12-09 清华大学 Preparation method for orthorhombic crystal system black phosphorus monocrystalline
CN105460910A (en) * 2015-11-19 2016-04-06 浙江大学 A constant-temperature large-scale preparing method of belt-shaped black phosphorus
CN105603517A (en) * 2016-01-11 2016-05-25 上海交通大学 Method for growing monocrystal black phosphorus based on solid-source chemical vapor deposition method
CN105565289A (en) * 2016-01-29 2016-05-11 西北大学 Black phosphorus and phosphinidene preparing methods
CN107285289A (en) * 2016-04-01 2017-10-24 中国科学院苏州纳米技术与纳米仿生研究所 Black phosphorus crystal, its preparation method and application with high photoelectric respone rate
JP2019516650A (en) * 2016-04-01 2019-06-20 中国科学院蘇州納米技術与納米▲ファン▼生研究所 Black phosphorus crystal having high photoelectric response ratio, two-dimensional black phosphorus PN junction, method for producing the same and application thereof
CN107285289B (en) * 2016-04-01 2019-07-05 中国科学院苏州纳米技术与纳米仿生研究所 Black phosphorus crystal, preparation method and application with high photoelectric respone rate
CN106498492A (en) * 2016-11-01 2017-03-15 南京工业大学 Method for preparing orthorhombic black phosphorus single crystal
CN106744754A (en) * 2016-11-14 2017-05-31 深圳大学 A kind of red phosphorus preprocess method prepared for black phosphorus
CN107188141A (en) * 2017-07-10 2017-09-22 太原理工大学 A kind of method that low temperature batch synthesizes black phosphorus nanometer sheet material
CN108059138A (en) * 2017-12-11 2018-05-22 昆明理工大学 A kind of preparation method of high-purity black phosphorus
CN108538707A (en) * 2018-03-05 2018-09-14 南京航空航天大学 A kind of two dimension black phosphorus crystal preparation method
CN108538707B (en) * 2018-03-05 2020-04-24 南京航空航天大学 Preparation method of two-dimensional black phosphorus crystal
WO2020262035A1 (en) * 2019-06-27 2020-12-30 堺化学工業株式会社 Production method for black phosphorus-containing composition and black phosphorus-containing composition
JP2021004161A (en) * 2019-06-27 2021-01-14 堺化学工業株式会社 Method for producing black phosphorus-containing composition and black phosphorus-containing composition
JP7248242B2 (en) 2019-06-27 2023-03-29 堺化学工業株式会社 Method for producing black phosphorus-containing composition and black phosphorus-containing composition
CN115522260A (en) * 2022-10-31 2022-12-27 陕西科技大学 Preparation method of high-stability black phosphorus single crystal
CN115522260B (en) * 2022-10-31 2024-06-04 陕西科技大学 Preparation method of high-stability black phosphorus single crystal

Similar Documents

Publication Publication Date Title
CN104630879A (en) Method for preparing black phosphorus monocrystal from high-purity red phosphorus under atmospheric pressure
CN103789835A (en) Improved gradient freeze GaAs single crystal growing method
RU2012113230A (en) METHOD AND DEVICE FOR GROWING SAPPHIRE SINGLE CRYSTALS
CN105603517A (en) Method for growing monocrystal black phosphorus based on solid-source chemical vapor deposition method
CN102877117A (en) Ingot furnace thermal field structure based on multi-heater and operation method
CN101235542A (en) Polycrystalline synthesis and single-crystal growth method for germanium zinc phosphide
RU2010130676A (en) METHOD AND DEVICE FOR PRODUCING SAPPHIRE SINGLE CRYSTAL
CN103952759B (en) The built-in Bridgman-Stockbarger method of calandria is prepared method and the device of calcium fluoride crystal
CN101550586B (en) Growing technique of ZnTe monocrystal
CN104451564B (en) A kind of method preparing siliceous target
CN101348939B (en) Growth method improving gallium arsenide single crystal utilization ratio
CN202989351U (en) Ingot furnace thermal field structure based on multiple heaters
CN103243380A (en) Horizontally directional zone-melting crystallization preparation method for large-size Re:YAG series of laser crystals
CN103397377B (en) The long brilliant technique of Uniform polycrystalline silicon and ingot furnace thermal field heating unit thereof
CN102191541A (en) Dual-temperature-zone synthesis method and apparatus for phosphorus-silicon-cadmium polycrystal material
CN101597787A (en) Under nitrogen, cast the method for the controlled doped monocrystalline silicon of nitrogen concentration
CN104073877A (en) Method for growing cerium-doped lutetium yttrium scintillation orthosilicate crystal by virtue of Bridgman-Stockbarger method
CN103205799A (en) Method for growing C-oriented white stone crystals
CN103911667A (en) Necking crucible-based crucible wall-free contact-type single crystal growth method
CN101613848B (en) Equiaxial method of ultrahigh pure aluminum employing grain refinement and grain deformation
CN203530480U (en) Equipment for growing sapphire single crystals
CN102168305B (en) Synthesis method of phosphorus-silicon-cadmium polycrystal material
US11242615B2 (en) Growth method and apparatus for preparing high-yield crystals
CN203382850U (en) Polycrystalline silicon ingot furnace thermal field heating device
CN103849931A (en) Polycrystalline silicon ingoting process for bottom compensated boron element

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150520

WD01 Invention patent application deemed withdrawn after publication