CN101235542A - Polycrystalline synthesis and single-crystal growth method for germanium zinc phosphide - Google Patents
Polycrystalline synthesis and single-crystal growth method for germanium zinc phosphide Download PDFInfo
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- CN101235542A CN101235542A CNA2007101445996A CN200710144599A CN101235542A CN 101235542 A CN101235542 A CN 101235542A CN A2007101445996 A CNA2007101445996 A CN A2007101445996A CN 200710144599 A CN200710144599 A CN 200710144599A CN 101235542 A CN101235542 A CN 101235542A
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CN2007101445996A CN101235542B (en) | 2007-11-14 | 2007-11-14 | Single-crystal growth method for germanium zinc phosphide |
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CN2007101445996A CN101235542B (en) | 2007-11-14 | 2007-11-14 | Single-crystal growth method for germanium zinc phosphide |
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CN101235542A true CN101235542A (en) | 2008-08-06 |
CN101235542B CN101235542B (en) | 2010-06-02 |
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CN2007101445996A Expired - Fee Related CN101235542B (en) | 2007-11-14 | 2007-11-14 | Single-crystal growth method for germanium zinc phosphide |
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Cited By (18)
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CN101892514A (en) * | 2010-07-20 | 2010-11-24 | 中国科学院上海硅酸盐研究所 | Process for growing sodium nitrate monocrystal by Bridgman method |
CN102060279A (en) * | 2010-11-29 | 2011-05-18 | 中山大学 | Device and method for synthesizing zinc germanium phosphide polycrystal |
CN102168305A (en) * | 2011-04-02 | 2011-08-31 | 山东大学 | Synthesis method of phosphorus-silicon-cadmium polycrystal material |
CN102168299A (en) * | 2011-04-02 | 2011-08-31 | 山东大学 | Method for growing phosphorus-silicon-cadmium single crystal |
CN102191541A (en) * | 2011-04-02 | 2011-09-21 | 山东大学 | Dual-temperature-zone synthesis method and apparatus for phosphorus-silicon-cadmium polycrystal material |
CN102433590A (en) * | 2011-11-25 | 2012-05-02 | 哈尔滨工业大学 | Method for reducing absorption coefficient of zinc-germanium phosphide crystal |
CN102437505A (en) * | 2011-11-25 | 2012-05-02 | 哈尔滨工业大学 | Manufacturing method of zinc germanium phosphide optical parametric oscillation element |
CN102540414A (en) * | 2010-12-15 | 2012-07-04 | 太仓南极风能源设备有限公司 | Bright-enhancement passive infrared night-vision glass |
CN102618935A (en) * | 2012-01-19 | 2012-08-01 | 中国科学院安徽光学精密机械研究所 | Annealing method for infrared nonlinear single crystal of multi-component compound containing easily volatile components |
CN104600299A (en) * | 2015-01-08 | 2015-05-06 | 华中科技大学 | Negative electrode active material for lithium-ion/sodium-ion battery, negative electrode and battery |
CN106400102A (en) * | 2016-10-26 | 2017-02-15 | 北京鼎泰芯源科技发展有限公司 | Growth equipment and method thereof capable of achieving online annealing of single crystal |
CN107268070A (en) * | 2017-06-10 | 2017-10-20 | 中国科学院合肥物质科学研究院 | A kind of method of low absorption phosphorus germanium zinc crystal growth |
CN108277532A (en) * | 2018-01-26 | 2018-07-13 | 山东大学 | The heteroepitaxial growth method of phosphorus silicon-zinc crystal body for silicon lamination solar cell |
CN109137070A (en) * | 2018-04-04 | 2019-01-04 | 中国科学院理化技术研究所 | Zn3P2S8Preparation method and application of nonlinear optical crystal |
CN110042461A (en) * | 2019-04-30 | 2019-07-23 | 哈尔滨工业大学 | A kind of growing method increasing heat transmitting large scale zinc-germanium phosphide crystal |
CN110144624A (en) * | 2018-02-11 | 2019-08-20 | 中国科学院理化技术研究所 | A kind of growing method of selenium germanium gallium barium polycrystalline synthetic method and selenium germanium gallium barium monocrystalline |
CN110424054A (en) * | 2019-09-03 | 2019-11-08 | 山东大学 | The preparation method and application of two-dimensional layer GeP nanometer monocrystalline film |
WO2023035343A1 (en) * | 2021-09-10 | 2023-03-16 | 海南大学 | Zn-ge-cu-si-p high-entropy alloy material used as negative electrode for lithium-ion battery and preparation method therefor |
Family Cites Families (3)
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US5611856A (en) * | 1994-05-19 | 1997-03-18 | Lockheed Sanders, Inc. | Method for growing crystals |
CN1234921C (en) * | 2003-03-25 | 2006-01-04 | 四川大学 | Method and apparatus for preparing polycrystals of S-Ga-Ag |
CN100494512C (en) * | 2007-05-09 | 2009-06-03 | 四川大学 | Method and equipment for synthesizing polycrystal of phosphor, germanium and zinc |
-
2007
- 2007-11-14 CN CN2007101445996A patent/CN101235542B/en not_active Expired - Fee Related
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101892514B (en) * | 2010-07-20 | 2012-05-30 | 中国科学院上海硅酸盐研究所 | Process for growing sodium nitrate monocrystal by Bridgman method |
CN101892514A (en) * | 2010-07-20 | 2010-11-24 | 中国科学院上海硅酸盐研究所 | Process for growing sodium nitrate monocrystal by Bridgman method |
CN102060279A (en) * | 2010-11-29 | 2011-05-18 | 中山大学 | Device and method for synthesizing zinc germanium phosphide polycrystal |
CN102060279B (en) * | 2010-11-29 | 2012-11-14 | 中山大学 | Device and method for synthesizing zinc germanium phosphide polycrystal |
CN102540414A (en) * | 2010-12-15 | 2012-07-04 | 太仓南极风能源设备有限公司 | Bright-enhancement passive infrared night-vision glass |
CN102168299B (en) * | 2011-04-02 | 2012-06-27 | 山东大学 | Method for growing phosphorus-silicon-cadmium single crystal |
CN102168305B (en) * | 2011-04-02 | 2012-06-27 | 山东大学 | Synthesis method of phosphorus-silicon-cadmium polycrystal material |
CN102191541A (en) * | 2011-04-02 | 2011-09-21 | 山东大学 | Dual-temperature-zone synthesis method and apparatus for phosphorus-silicon-cadmium polycrystal material |
CN102168299A (en) * | 2011-04-02 | 2011-08-31 | 山东大学 | Method for growing phosphorus-silicon-cadmium single crystal |
CN102168305A (en) * | 2011-04-02 | 2011-08-31 | 山东大学 | Synthesis method of phosphorus-silicon-cadmium polycrystal material |
CN102437505A (en) * | 2011-11-25 | 2012-05-02 | 哈尔滨工业大学 | Manufacturing method of zinc germanium phosphide optical parametric oscillation element |
CN102433590A (en) * | 2011-11-25 | 2012-05-02 | 哈尔滨工业大学 | Method for reducing absorption coefficient of zinc-germanium phosphide crystal |
CN102433590B (en) * | 2011-11-25 | 2014-04-09 | 哈尔滨工业大学 | Method for reducing absorption coefficient of zinc-germanium phosphide crystal |
CN102618935A (en) * | 2012-01-19 | 2012-08-01 | 中国科学院安徽光学精密机械研究所 | Annealing method for infrared nonlinear single crystal of multi-component compound containing easily volatile components |
CN104600299A (en) * | 2015-01-08 | 2015-05-06 | 华中科技大学 | Negative electrode active material for lithium-ion/sodium-ion battery, negative electrode and battery |
CN106400102A (en) * | 2016-10-26 | 2017-02-15 | 北京鼎泰芯源科技发展有限公司 | Growth equipment and method thereof capable of achieving online annealing of single crystal |
CN106400102B (en) * | 2016-10-26 | 2019-06-28 | 珠海鼎泰芯源晶体有限公司 | A kind of growth apparatus and its method of achievable monocrystalline online annealing |
CN107268070A (en) * | 2017-06-10 | 2017-10-20 | 中国科学院合肥物质科学研究院 | A kind of method of low absorption phosphorus germanium zinc crystal growth |
CN108277532B (en) * | 2018-01-26 | 2019-08-16 | 山东大学 | The heteroepitaxial growth method of phosphorus silicon-zinc crystal body for silicon lamination solar cell |
CN108277532A (en) * | 2018-01-26 | 2018-07-13 | 山东大学 | The heteroepitaxial growth method of phosphorus silicon-zinc crystal body for silicon lamination solar cell |
CN110144624A (en) * | 2018-02-11 | 2019-08-20 | 中国科学院理化技术研究所 | A kind of growing method of selenium germanium gallium barium polycrystalline synthetic method and selenium germanium gallium barium monocrystalline |
CN109137070A (en) * | 2018-04-04 | 2019-01-04 | 中国科学院理化技术研究所 | Zn3P2S8Preparation method and application of nonlinear optical crystal |
CN109137070B (en) * | 2018-04-04 | 2020-03-03 | 中国科学院理化技术研究所 | Zn3P2S8Preparation method and application of nonlinear optical crystal |
CN110042461A (en) * | 2019-04-30 | 2019-07-23 | 哈尔滨工业大学 | A kind of growing method increasing heat transmitting large scale zinc-germanium phosphide crystal |
CN110042461B (en) * | 2019-04-30 | 2021-06-08 | 哈尔滨工业大学 | Growth method of large-size zinc germanium phosphide crystal for increasing heat transfer |
CN110424054A (en) * | 2019-09-03 | 2019-11-08 | 山东大学 | The preparation method and application of two-dimensional layer GeP nanometer monocrystalline film |
CN110424054B (en) * | 2019-09-03 | 2021-09-28 | 山东大学 | Preparation method and application of two-dimensional layered GeP single crystal nano film |
WO2023035343A1 (en) * | 2021-09-10 | 2023-03-16 | 海南大学 | Zn-ge-cu-si-p high-entropy alloy material used as negative electrode for lithium-ion battery and preparation method therefor |
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Inventor after: Yang Chunhui Inventor after: Xia Shixing Inventor after: Lei Zuotao Inventor after: Wang Meng Inventor before: Yang Chunhui Inventor before: Yang Chunhui Inventor before: Xia Shixing Inventor before: Wang Meng |
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Free format text: CORRECT: INVENTOR; FROM: YANG CHUNHUI G. A. VEROZUBOVA XIA SHIXING WANG MENG TO: YANG CHUNHUI XIA SHIXING LEI ZUOTAO WANG MENG |
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