CN104630747A - 一种mocvd设备的喷淋头 - Google Patents
一种mocvd设备的喷淋头 Download PDFInfo
- Publication number
- CN104630747A CN104630747A CN201510062237.7A CN201510062237A CN104630747A CN 104630747 A CN104630747 A CN 104630747A CN 201510062237 A CN201510062237 A CN 201510062237A CN 104630747 A CN104630747 A CN 104630747A
- Authority
- CN
- China
- Prior art keywords
- spray header
- induction pipe
- gas
- baffling
- header according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510062237.7A CN104630747B (zh) | 2015-02-05 | 2015-02-05 | 一种mocvd设备的喷淋头 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510062237.7A CN104630747B (zh) | 2015-02-05 | 2015-02-05 | 一种mocvd设备的喷淋头 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104630747A true CN104630747A (zh) | 2015-05-20 |
CN104630747B CN104630747B (zh) | 2017-06-30 |
Family
ID=53209982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510062237.7A Active CN104630747B (zh) | 2015-02-05 | 2015-02-05 | 一种mocvd设备的喷淋头 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104630747B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102277561A (zh) * | 2010-06-14 | 2011-12-14 | 硅绝缘体技术有限公司 | 用于多个基板的气体处理的系统和方法 |
CN202671653U (zh) * | 2012-06-18 | 2013-01-16 | 杭州士兰明芯科技有限公司 | Mocvd设备反应器的喷淋头及其连接结构 |
CN103140602A (zh) * | 2010-08-02 | 2013-06-05 | 威科仪器有限公司 | Cvd反应器的排气装置 |
US20140061324A1 (en) * | 2012-08-31 | 2014-03-06 | Jonathan D. Mohn | Variable showerhead flow by varying internal baffle conductance |
CN103938177A (zh) * | 2014-05-07 | 2014-07-23 | 南昌黄绿照明有限公司 | 可用氯气在线清洗的非钎焊mocvd喷头 |
-
2015
- 2015-02-05 CN CN201510062237.7A patent/CN104630747B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102277561A (zh) * | 2010-06-14 | 2011-12-14 | 硅绝缘体技术有限公司 | 用于多个基板的气体处理的系统和方法 |
CN103140602A (zh) * | 2010-08-02 | 2013-06-05 | 威科仪器有限公司 | Cvd反应器的排气装置 |
CN202671653U (zh) * | 2012-06-18 | 2013-01-16 | 杭州士兰明芯科技有限公司 | Mocvd设备反应器的喷淋头及其连接结构 |
US20140061324A1 (en) * | 2012-08-31 | 2014-03-06 | Jonathan D. Mohn | Variable showerhead flow by varying internal baffle conductance |
CN103938177A (zh) * | 2014-05-07 | 2014-07-23 | 南昌黄绿照明有限公司 | 可用氯气在线清洗的非钎焊mocvd喷头 |
Also Published As
Publication number | Publication date |
---|---|
CN104630747B (zh) | 2017-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8679956B2 (en) | Multiple precursor showerhead with by-pass ports | |
US20130269612A1 (en) | Gas Treatment Apparatus with Surrounding Spray Curtains | |
TWI548774B (zh) | Cvd反應器之進氣機構 | |
JP5859004B2 (ja) | ガス注入分散デバイスを備えるシャワーヘッドアセンブリ | |
CN101925980B (zh) | 化学汽相沉积设备 | |
CN101328579B (zh) | Hvpe喷头设计 | |
TWI478771B (zh) | 多氣體同心注入噴頭 | |
CN105839077B (zh) | 用于沉积iii-v主族半导体层的方法和装置 | |
KR20140023934A (ko) | 다수 레벨의 샤워헤드 디자인 | |
US9328419B2 (en) | Gas treatment apparatus with surrounding spray curtains | |
CN101298693A (zh) | 一种用于mocvd系统的双层气流石英整流罩反应室装置 | |
CN106811736A (zh) | 一种化学气相沉积装置 | |
TW201439367A (zh) | Cvd裝置及cvd裝置處理室的淨化方法 | |
CN103160814B (zh) | 反应室及其气流控制方法 | |
CN104630747A (zh) | 一种mocvd设备的喷淋头 | |
JP2010027675A (ja) | 気相成長装置 | |
CN102586759B (zh) | 一种气体输送系统及应用该系统的半导体处理设备 | |
CN109423695A (zh) | 掺杂源供应管路及化学气相沉积系统 | |
CN205821448U (zh) | 一种用于mocvd反应室的清洁系统 | |
TWM464459U (zh) | 金屬有機化學氣相沉積反應器的氣體分佈裝置及反應器 | |
CN103305809B (zh) | 一种温度连续可调的喷淋头 | |
US20180119277A1 (en) | Gas Distribution Apparatus for Deposition System | |
CN201834966U (zh) | 一种金属有机物化学气相沉积设备的水冷夹层 | |
US20120247392A1 (en) | Multichamber thin-film deposition apparatus and gas-exhausting module | |
KR101160935B1 (ko) | 배치식 증착 장치의 가스 분사 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201215 Address after: Floor 3, building a, Chongxian building, information Avenue, Nanhai Software Park, Nanhai District, Foshan City, Guangdong Province Patentee after: FOSHAN INSTITUTE, SUN YAT-SEN University Patentee after: SUN YAT-SEN University Address before: 3 / F, building s, Chongxian building, information Avenue, Nanhai Software Park, Foshan City, Guangdong Province Patentee before: FOSHAN INSTITUTE, SUN YAT-SEN University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210401 Address after: 201600 G08, 7th floor, building 11, 1569 Yushu Road, Songjiang District, Shanghai Patentee after: Shanghai Youdian Semiconductor Technology Co.,Ltd. Address before: Floor 3, building a, Chongxian building, information Avenue, Nanhai Software Park, Nanhai District, Foshan City, Guangdong Province Patentee before: FOSHAN INSTITUTE, SUN YAT-SEN University Patentee before: SUN YAT-SEN University |