CN104617915A - Master-slave flip-flop based on FinFET transistor - Google Patents
Master-slave flip-flop based on FinFET transistor Download PDFInfo
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Abstract
The invention discloses a master-slave flip-flop based on a FinFET transistor. The master-slave flip-flop based on the FinFET transistor is that a first P type FinFET pipe, a second P type FinFET pipe, a third P type FinFET pipe, a first N type FinFET pipe, a second N type FinFET pipe, a third N type FinFET pipe, a fourth N type FinFET pipe, a fifth N type FinFET pipe and a sixth N type FinFET pipe form a master latch; a slave latch comprises a second phase inverter and a third phase inverter, wherein the second phase inverter consists of a fourth P type FinFET pipe and a seventh N type FinFET pipe; the third phase inverter consists of a fifth P type FinFET pipe and an eighth N type FinFET pipe; the slave lock is a loop composed of two phase inverters. The master-slave flip-flop based on the FinFET transistor has the advantages that the circuit structure is simple, the power consumption and spreading delay are small, the 32nm process device parameters of a PTM model are adopted for simulating under a standard voltage (1v) condition; compared with the existing flip-flop, the master-slave flip-flop has the advantages that the circuit power consumption is reduced by about 66%, and the spreading delay is reduced by about 48%.
Description
Technical field
The present invention relates to a kind of trigger, especially relate to a kind of master-slave flip-flop based on FinFET transistor.
Background technology
At present, the design technology of integrated circuit technique enters into the nanometer stage, in chip design process, no matter considers from the cost of chip itself and performance, or consider from the market angle of electronics and IT products, power consumption size has become the important indicator weighing chip performance.Low power dissipation design has become focus and the difficult point of current chip design.
Along with constantly reducing of transistor size, by the restriction of short-channel effect and present production process, the space that common CMOS transistor size reduces extremely reduces.When the size of common CMOS transistor narrows down to below 20nm, the leakage current of CMOS transistor can sharply strengthen, and causes larger circuit to leak power consumption.Further, circuit short-channel effect becomes more obvious, and CMOS transistor becomes rather unstable, significantly limit the raising of circuit performance.The raceway groove of FinFET transistor adopts zero doping or low-doped, and raceway groove is enclosed by grid three bread, this special 3-D solid structure, enhances the control dynamics of grid to raceway groove, inhibits short-channel effect greatly, inhibit the leakage current of device.FinFET (fin field-effect transistor, Fin Field-Effect Transistor), as a kind of novel 3D transistor, becomes gradually and takes over common CMOS transistor, one of improved device of continuity Moore's Law.
Trigger, as a kind of basic processing unit of electronic system, is the important composition parts forming basic timing unit, is widely used in large-scale integrated circuit (IC) design.The quality of trigger performance often can the quality of decision-making circuit performance.Design one to be swift in response, the trigger that power consumption is lower has become one of unavoidable problem of circuit designers.The existing master-slave flip-flop based on FinFET transistor mainly contains two kinds: variable connector type master-slave flip-flop and pressure impulse type master-slave flip-flop.As shown in Figure 1, there is following problem in this trigger with the circuit diagram of variable connector type master-slave flip-flop: the FinFET number of transistors one, used is more, and circuit structure is complicated, takies chip area large and can cause larger circuit power consumption; Two, the clock signal of this circuit access needs driving four FinFET transmission gates, load clock signal is very large, cause very large circuit power consumption and propagation delay, the propagation delay of this circuit is time delay and a FinFET inverter time delay sum of a FinFET transmission gate.Force the circuit diagram of impulse type master-slave flip-flop as shown in Figure 2, the quantity relative variable connector type master-slave flip-flop of the transistor that this trigger uses reduces, clock signal only needs driving two FinFET transmission gates, clock load reduces, but there is following problem in this trigger: the change of latch state in trigger, need stronger input data pulse, of short duration DC channel causes larger quiescent dissipation, and power consumption is larger.
In view of this, design a circuit structure simple, the master-slave flip-flop based on FinFET transistor that power consumption and propagation delay are all less is significant.
Summary of the invention
It is simple that technical problem to be solved by this invention is to provide a kind of circuit structure, the master-slave flip-flop based on FinFET transistor that power consumption and propagation delay are all less.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of master-slave flip-flop based on FinFET transistor, comprises a P type FinFET pipe, the 2nd P type FinFET pipe, the 3rd P type FinFET manages, the 4th P type FinFET pipe, the 5th P type FinFET manage, the first N-type FinFET manages, the second N-type FinFET manages, the 3rd N-type FinFET pipe, the 4th N-type FinFET manage, the 5th N-type FinFET pipe, the 6th N-type FinFET manage, the 7th N-type FinFET manages and the 8th N-type FinFET manages;
The substrate of the drain electrode of a described P type FinFET pipe, the drain electrode of the 2nd described P type FinFET pipe, the drain electrode of the 4th described P type FinFET pipe, the drain electrode of the 5th described P type FinFET pipe, the substrate of a described P type FinFET pipe, the substrate of the 2nd described P type FinFET pipe, the substrate of the 3rd described P type FinFET pipe, the substrate of the 4th described P type FinFET pipe and the 5th described P type FinFET pipe all accesses power supply;
The substrate of the first described N-type FinFET pipe, the substrate of the second described N-type FinFET pipe, the substrate of the 3rd described N-type FinFET pipe, the substrate of the 4th described N-type FinFET pipe, the substrate of the 5th described N-type FinFET pipe, the substrate of the 6th described N-type FinFET pipe, the substrate of the 7th described N-type FinFET pipe, the substrate of the 8th described N-type FinFET pipe, the drain electrode of the first described N-type FinFET pipe, the drain electrode of the 5th described N-type FinFET pipe, the drain electrode of the 7th described N-type FinFET pipe and the equal ground connection of drain electrode of the 8th described N-type FinFET pipe,
The drain electrode of the second described N-type FinFET pipe is signal input part, and the drain electrode of the 3rd described N-type FinFET pipe is inversion signal input; The grid of the second described N-type FinFET pipe, the grid of the 3rd described P type FinFET pipe is connected with the grid of the 3rd described N-type FinFET pipe and its link is clock signal input terminal, and the grid of the 4th described N-type FinFET pipe is connected with the grid of the 6th described N-type FinFET pipe and its link is inverting clock signal input;
The source electrode of the first described N-type FinFET pipe, the grid of a described P type FinFET pipe, the source electrode of the second described N-type FinFET pipe are connected with the drain electrode of the 4th described N-type FinFET pipe; The source electrode of a described P type FinFET pipe, the grid of the 2nd described P type FinFET pipe, the grid of the first described N-type FinFET pipe, the grid of the 5th described N-type FinFET pipe are connected with the source electrode of the 3rd described N-type FinFET pipe; The source electrode of the 2nd described P type FinFET pipe, the drain electrode of the 3rd described P type FinFET pipe, the source electrode of the 5th described N-type FinFET pipe are connected with the drain electrode of the 6th described N-type FinFET pipe;
The source electrode of the 3rd described P type FinFET pipe, the source electrode of the 4th described P type FinFET pipe, the grid of the 5th described P type FinFET pipe, the source electrode of the 4th described N-type FinFET pipe, the source electrode of the 6th described N-type FinFET pipe, the source electrode of the 7th described N-type FinFET pipe is connected with the grid of the 8th described N-type FinFET pipe and its link is signal output part; Grid, the source electrode of the 5th described P type FinFET pipe of the 4th described P type FinFET pipe, the grid of the 7th described N-type FinFET pipe is connected with the source electrode of the 8th described N-type FinFET pipe and its link is inversion signal output.
The channel length of a described P type FinFET pipe, the channel length of the 2nd described P type FinFET pipe, the channel length of the 3rd described P type FinFET pipe, the channel length of the 4th described P type FinFET pipe, the channel length of the 5th described P type FinFET pipe, the channel length of the first described N-type FinFET pipe, the channel length of the second described N-type FinFET pipe, the channel length of the 3rd described N-type FinFET pipe, the channel length of the 4th described N-type FinFET pipe, the channel length of the 5th described N-type FinFET pipe, the channel length of the 6th described N-type FinFET pipe, the channel length of the 7th described N-type FinFET pipe and the channel length of the 8th described N-type FinFET pipe are 32nm.
Compared with prior art, the invention has the advantages that by a P type FinFET pipe, the 2nd P type FinFET manages, the 3rd P type FinFET manages, the first N-type FinFET pipe, the second N-type FinFET pipe, the 3rd N-type FinFET manage, the 4th N-type FinFET pipe, the 5th N-type FinFET pipe and the 6th N-type FinFET pipe form main latch; The second inverter be made up of the 4th P type FinFET pipe and the 7th N-type FinFET pipe from latch and the 3rd inverter that the 5th P type FinFET manages and the 8th N-type FinFET pipe is formed form, and are the loop of two inverters compositions from latch; Main latch and from the isolation that there is not switching circuit between latch, is embedded in the inverter ring of main latch from latch, can reduces the propagation delay time of trigger thus greatly; And master-slave flip-flop of the present invention is made up of 13 FinFET pipes, and number of transistors is less, and circuit structure is simple, reduce chip area, reduce circuit power consumption, clock signal only needs load five FinFET pipes, clock load reduces, and reduces circuit power consumption further; 3rd P type FinFET manages and the passgate structures of the 6th N-type FinFET pipe formation, not only ensures the Full-swing output of circuit, but also can the driving force of intensifier circuit; Adopt the 32nm process devices parameter of PTM model, emulate under normal voltage (1v) condition, circuit power consumption of the present invention is than existing flip-flop circuit lower power consumption about 66%, and propagation delay reduces about 48%.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the variable connector type master-slave flip-flop of prior art;
Fig. 2 is the circuit diagram of the pressure impulse type master-slave flip-flop of prior art;
Fig. 3 (a) is the circuit diagram of the master-slave flip-flop based on FinFET transistor of the present invention;
The simplified electrical circuit diagram that Fig. 3 (b) is Fig. 3 (a);
Fig. 4 is the circuit simulation figure of master-slave flip-flop under normal voltage (1v) based on FinFET transistor of the present invention;
Fig. 5 is the circuit simulation figure of master-slave flip-flop under superthreshold voltage (0.8v) based on FinFET transistor of the present invention;
Fig. 6 is the propagation delay comparative analysis figure of two kinds of triggers of the master-slave flip-flop based on FinFET transistor of the present invention and prior art;
Fig. 7 is the unit switch observable index comparatively analysis chart of two kinds of triggers of the master-slave flip-flop based on FinFET transistor of the present invention and prior art.
Embodiment
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
Embodiment: as shown in Fig. 3 (a), based on a master-slave flip-flop for FinFET transistor, comprise a P type FinFET pipe P1, the 2nd P type FinFET pipe P2, the 3rd P type FinFET pipe P3, the 4th P type FinFET pipe P4, the 5th P type FinFET pipe P5, the first N-type FinFET pipe N1, the second N-type FinFET pipe N2, the 3rd N-type FinFET pipe N3, the 4th N-type FinFET pipe N4, the 5th N-type FinFET pipe N5, the 6th N-type FinFET pipe N6, the 7th N-type FinFET pipe N7 and the 8th N-type FinFET pipe N8;
The substrate of the substrate of the drain electrode of the drain electrode of the one P type FinFET pipe P1, the drain electrode of the 2nd P type FinFET pipe P2, the 4th P type FinFET pipe P4, the drain electrode of the 5th P type FinFET pipe P5, a P type FinFET pipe P1, the substrate of the 2nd P type FinFET pipe P2, the substrate of the 3rd P type FinFET pipe P3, the substrate of the 4th P type FinFET pipe P4 and the 5th P type FinFET pipe P5 all accesses power supply;
The substrate of the first N-type FinFET pipe N1, the substrate of the second N-type FinFET pipe N2, the substrate of the 3rd N-type FinFET pipe N3, the substrate of the 4th N-type FinFET pipe N4, the substrate of the 5th N-type FinFET pipe N5, the substrate of the 6th N-type FinFET pipe N6, the substrate of the 7th N-type FinFET pipe N7, the substrate of the 8th N-type FinFET pipe N8, the drain electrode of the first N-type FinFET pipe N1, the drain electrode of the 5th N-type FinFET pipe N5, the drain electrode of the 7th N-type FinFET pipe N7 and the equal ground connection of drain electrode of the 8th N-type FinFET pipe N8,
The drain electrode of the second N-type FinFET pipe N2 is signal input part, access input signal D, and the drain electrode of the 3rd N-type FinFET pipe N3 is inversion signal input, access rp input signal Db; The grid of the second N-type FinFET pipe N2, the grid of the 3rd P type FinFET pipe P3 is connected with the grid of the 3rd N-type FinFET pipe N3 and its link is clock signal input terminal, incoming clock signal CLK, the grid of the 4th N-type FinFET pipe N4 is connected with the grid of the 6th N-type FinFET pipe N6 and its link is inverting clock signal input, access inverting clock signal CLKb; The difference of input signal D and rp input signal Db is only that both phase 180 degree, the difference of clock signal clk and inverting clock signal CLKb are only both phase 180 degree;
The source electrode of the first N-type FinFET pipe N1, the grid of a P type FinFET pipe P1, the source electrode of the second N-type FinFET pipe N2 are connected with the drain electrode of the 4th N-type FinFET pipe N4; The source electrode of the one P type FinFET pipe P1, the grid of the 2nd P type FinFET pipe P2, the grid of the first N-type FinFET pipe N1, the grid of the 5th N-type FinFET pipe N5 are connected with the source electrode of the 3rd N-type FinFET pipe N3; The source electrode of the 2nd P type FinFET pipe P2, the drain electrode of the 3rd P type FinFET pipe P3, the source electrode of the 5th N-type FinFET pipe N5 are connected with the drain electrode of the 6th N-type FinFET pipe N6;
The grid of the source electrode of the 3rd P type FinFET pipe P3, the source electrode of the 4th P type FinFET pipe P4, the 5th P type FinFET pipe P5, the source electrode of the 4th N-type FinFET pipe N4, the source electrode of the 6th N-type FinFET pipe N6, the source electrode of the 7th N-type FinFET pipe N7 is connected with the grid of the 8th N-type FinFET pipe N8 and its link is signal output part, output signal output Q; Grid, the source electrode of the 5th P type FinFET pipe P5 of the 4th P type FinFET pipe P4, the grid of the 7th N-type FinFET pipe N7 is connected with the source electrode of the 8th N-type FinFET pipe N8 and its link is inversion signal output, exports reversed-phase output signal Qb; The difference of output signal Q and reversed-phase output signal Qb is only both phase 180 degree.
In the present embodiment, the channel length of the one P type FinFET pipe P1, the channel length of the 2nd P type FinFET pipe P2, the channel length of the 3rd P type FinFET pipe P3, the channel length of the 4th P type FinFET pipe P4, the channel length of the 5th P type FinFET pipe P5, the channel length of the first N-type FinFET pipe N1, the channel length of the second N-type FinFET pipe N2, the channel length of the 3rd N-type FinFET pipe N3, the channel length of the 4th N-type FinFET pipe N4, the channel length of the 5th N-type FinFET pipe N5, the channel length of the 6th N-type FinFET pipe N6, the channel length of the 7th N-type FinFET pipe N7 and the channel length of the 8th N-type FinFET pipe N8 are 32nm.
In the present embodiment, 2nd P type FinFET pipe P2 and the 5th N-type FinFET pipe N5 forms the first inverter F1,4th P type FinFET pipe P4 and the 7th N-type FinFET pipe N7 forms the second inverter F2, and the 5th P type FinFET pipe P5 and the 8th N-type FinFET pipe N8 forms the 3rd inverter F3.The master-slave flip-flop of the present embodiment uses inverter to replace the simplified electrical circuit diagram after the FinFET pipe of its correspondence as shown in Fig. 3 (b).
In the master-slave flip-flop of the present embodiment, a P type FinFET pipe P1, the 2nd P type FinFET pipe P2, the 3rd P type FinFET pipe P3, the first N-type FinFET pipe N1, the second N-type FinFET pipe N2, the 3rd N-type FinFET pipe N3, the 4th N-type FinFET pipe N4, the 5th N-type FinFET pipe N5 and the 6th N-type FinFET pipe N6 form main latch; In main latch, 3rd P type FinFET pipe P3 and the 6th N-type FinFET pipe N6 forms transmission gate circuit, 3rd P type FinFET pipe P3, the 4th N-type FinFET pipe N4 and the 6th N-type FinFET pipe N6 form switching circuit, and a P type FinFET pipe P1, the first N-type FinFET pipe N1, the second N-type FinFET pipe N2 and the 3rd N-type FinFET pipe N3 form assignment circuit.4th P type FinFET pipe P4, the 5th P type FinFET pipe P5, the 7th N-type FinFET pipe N7 and the 8th N-type FinFET pipe N8 are formed from latch, are the loop be made up of the second inverter F2 and the 3rd inverter F3 from latch.
The operation principle of the master-slave flip-flop of the present embodiment is as described below:
When clock signal clk is high level, one P type FinFET pipe P1, 2nd P type FinFET pipe P2, 3rd P type FinFET pipe P3, first N-type FinFET pipe N1, second N-type FinFET pipe N2, 3rd N-type FinFET pipe N3, 4th N-type FinFET pipe N4, the main latch that 5th N-type FinFET pipe N5 and the 6th N-type FinFET pipe N6 is formed is in sample states, input signal D and rp input signal Db is input in master-slave flip-flop, if input signal D is low level, the circuit that a first N-type FinFET pipe N1 and P type FinFET pipe P1 forms has latch function, if input signal D is high level, the circuit that a first N-type FinFET pipe N1 and P type FinFET pipe P1 forms does not have latch function, and circuit relies on the discharge and recharge of node capacitor to carry out work.Input signal D and rp input signal Db is transferred to the drain electrode of the 3rd P type FinFET pipe P3 and the 6th N-type FinFET pipe N6; Now, be in hold mode from latch, the output signal Q of signal output part and the reversed-phase output signal Qb of inversion signal output is in maintenance state.
When CLK is low level, the switching circuit of the 3rd P type FinFET pipe P3, the 4th N-type FinFET pipe N4 and the 6th N-type FinFET pipe N6 composition is in conducting state, meanwhile, what the 4th P type FinFET pipe P4, the 5th P type FinFET pipe P5, the 7th N-type FinFET pipe P7 and the 8th N-type FinFET pipe P8 formed is changed from the state of latch, the output signal Q of signal output part and the corresponding change of reversed-phase output signal Qb of inversion signal output.
Adopt PTM model (Predictive Technology Model), be specially the 32nm process devices parameter of the BSIM-CMG108 model of Berkeley University, respectively under normal voltage (1v) condition and under superthreshold voltage (0.8v) condition, functional simulation emulation is carried out to master-slave flip-flop of the present invention, wherein Fig. 4 is the circuit simulation figure under normal voltage (1v), abscissa represents simulation time, ordinate V (CLK) represents the amplitude voltage of clock signal clk, V (D) represents the amplitude voltage of input signal D, V (Q) represents the amplitude voltage of output signal Q, Fig. 5 is the circuit simulation figure under superthreshold voltage (0.8v), abscissa represents simulation time, ordinate V (CLK) represents the amplitude voltage of clock signal clk, V (D) represents the amplitude voltage of input signal D, and V (Q) represents the amplitude voltage of output signal Q.Analysis chart 4 and Fig. 5 can know, master-slave flip-flop of the present invention not only has correct logic function and also has high-speed low-power-consumption feature, wherein master-slave flip-flop is operated in the propagation delay that the propagation delay under superthreshold voltage (0.8v) condition is operated under normal voltage (1v) condition relative to master-slave flip-flop increases about 14%, but the lower power consumption of circuit about 38%.
Under 32nm technique, respectively the propagation delay of two kinds of master-slave flip-flops of master-slave flip-flop of the present invention and prior art (variable connector type master-slave flip-flop and force impulse type master-slave flip-flop) and circuit energy consumption are contrasted, wherein propagation delay comparative analysis figure as shown in Figure 6, and comparatively analysis chart is as shown in Figure 7 for unit switch observable index.Analysis chart 6 and Fig. 7 known, under 32nm FinFET technique, when master-slave flip-flop circuit working of the present invention is when normal voltage (1v), the circuit power consumption of this master-slave flip-flop reduces about 66% than the circuit power consumption of two kinds of master-slave flip-flops of prior art, and propagation delay reduces about 48%.
Claims (2)
1., based on a master-slave flip-flop for FinFET transistor, it is characterized in that comprising a P type FinFET pipe, the 2nd P type FinFET pipe, the 3rd P type FinFET manages, the 4th P type FinFET pipe, the 5th P type FinFET manage, the first N-type FinFET manages, the second N-type FinFET manages, the 3rd N-type FinFET pipe, the 4th N-type FinFET manage, the 5th N-type FinFET pipe, the 6th N-type FinFET manage, the 7th N-type FinFET manages and the 8th N-type FinFET manages;
The substrate of the drain electrode of a described P type FinFET pipe, the drain electrode of the 2nd described P type FinFET pipe, the drain electrode of the 4th described P type FinFET pipe, the drain electrode of the 5th described P type FinFET pipe, the substrate of a described P type FinFET pipe, the substrate of the 2nd described P type FinFET pipe, the substrate of the 3rd described P type FinFET pipe, the substrate of the 4th described P type FinFET pipe and the 5th described P type FinFET pipe all accesses power supply;
The substrate of the first described N-type FinFET pipe, the substrate of the second described N-type FinFET pipe, the substrate of the 3rd described N-type FinFET pipe, the substrate of the 4th described N-type FinFET pipe, the substrate of the 5th described N-type FinFET pipe, the substrate of the 6th described N-type FinFET pipe, the substrate of the 7th described N-type FinFET pipe, the substrate of the 8th described N-type FinFET pipe, the drain electrode of the first described N-type FinFET pipe, the drain electrode of the 5th described N-type FinFET pipe, the drain electrode of the 7th described N-type FinFET pipe and the equal ground connection of drain electrode of the 8th described N-type FinFET pipe,
The drain electrode of the second described N-type FinFET pipe is signal input part, and the drain electrode of the 3rd described N-type FinFET pipe is inversion signal input; The grid of the second described N-type FinFET pipe, the grid of the 3rd described P type FinFET pipe is connected with the grid of the 3rd described N-type FinFET pipe and its link is clock signal input terminal, and the grid of the 4th described N-type FinFET pipe is connected with the grid of the 6th described N-type FinFET pipe and its link is inverting clock signal input;
The source electrode of the first described N-type FinFET pipe, the grid of a described P type FinFET pipe, the source electrode of the second described N-type FinFET pipe are connected with the drain electrode of the 4th described N-type FinFET pipe; The source electrode of a described P type FinFET pipe, the grid of the 2nd described P type FinFET pipe, the grid of the first described N-type FinFET pipe, the grid of the 5th described N-type FinFET pipe are connected with the source electrode of the 3rd described N-type FinFET pipe; The source electrode of the 2nd described P type FinFET pipe, the drain electrode of the 3rd described P type FinFET pipe, the source electrode of the 5th described N-type FinFET pipe are connected with the drain electrode of the 6th described N-type FinFET pipe;
The source electrode of the 3rd described P type FinFET pipe, the source electrode of the 4th described P type FinFET pipe, the grid of the 5th described P type FinFET pipe, the source electrode of the 4th described N-type FinFET pipe, the source electrode of the 6th described N-type FinFET pipe, the source electrode of the 7th described N-type FinFET pipe is connected with the grid of the 8th described N-type FinFET pipe and its link is signal output part; Grid, the source electrode of the 5th described P type FinFET pipe of the 4th described P type FinFET pipe, the grid of the 7th described N-type FinFET pipe is connected with the source electrode of the 8th described N-type FinFET pipe and its link is inversion signal output.
2. a kind of master-slave flip-flop based on FinFET transistor according to claim 1, it is characterized in that the channel length of a described P type FinFET pipe, the channel length of the 2nd described P type FinFET pipe, the channel length of the 3rd described P type FinFET pipe, the channel length of the 4th described P type FinFET pipe, the channel length of the 5th described P type FinFET pipe, the channel length of the first described N-type FinFET pipe, the channel length of the second described N-type FinFET pipe, the channel length of the 3rd described N-type FinFET pipe, the channel length of the 4th described N-type FinFET pipe, the channel length of the 5th described N-type FinFET pipe, the channel length of the 6th described N-type FinFET pipe, the channel length of the 7th described N-type FinFET pipe and the channel length of the 8th described N-type FinFET pipe are 32nm.
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| CN201410808899.XA CN104617915B (en) | 2014-12-23 | 2014-12-23 | Master-slave flip-flop based on FinFET transistor |
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| CN201410808899.XA CN104617915B (en) | 2014-12-23 | 2014-12-23 | Master-slave flip-flop based on FinFET transistor |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1431778A (en) * | 1995-09-05 | 2003-07-23 | 三菱电机株式会社 | Trigger circuit |
| EP0768758B1 (en) * | 1995-10-12 | 2004-01-02 | STMicroelectronics S.r.l. | Low-consumption and high-density D flip-flop circuit implementation, particularly for standard cell libraries |
| CN1855716A (en) * | 2005-04-29 | 2006-11-01 | 上海贝岭股份有限公司 | Structure and method for preventing primary and secondary trigger timers from interconnection |
| US20070085585A1 (en) * | 2005-10-13 | 2007-04-19 | Arm Limited | Data retention in operational and sleep modes |
| US20120014171A1 (en) * | 2010-07-16 | 2012-01-19 | Ching-Te Chuang | Schmitt trigger-based finfet sram cell |
-
2014
- 2014-12-23 CN CN201410808899.XA patent/CN104617915B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1431778A (en) * | 1995-09-05 | 2003-07-23 | 三菱电机株式会社 | Trigger circuit |
| EP0768758B1 (en) * | 1995-10-12 | 2004-01-02 | STMicroelectronics S.r.l. | Low-consumption and high-density D flip-flop circuit implementation, particularly for standard cell libraries |
| CN1855716A (en) * | 2005-04-29 | 2006-11-01 | 上海贝岭股份有限公司 | Structure and method for preventing primary and secondary trigger timers from interconnection |
| US20070085585A1 (en) * | 2005-10-13 | 2007-04-19 | Arm Limited | Data retention in operational and sleep modes |
| US20120014171A1 (en) * | 2010-07-16 | 2012-01-19 | Ching-Te Chuang | Schmitt trigger-based finfet sram cell |
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| CN104617915B (en) | 2017-04-26 |
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Effective date of registration: 20221221 Address after: 276000 intersection of Volvo road and Liugong Road, economic development zone, Linyi City, Shandong Province Patentee after: Shandong Zhongju Electric Co.,Ltd. Address before: 315211, Fenghua Road, Jiangbei District, Zhejiang, Ningbo 818 Patentee before: Ningbo University |