CN104597725A - Vacuum chamber of capillary discharge EUV light source - Google Patents
Vacuum chamber of capillary discharge EUV light source Download PDFInfo
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- CN104597725A CN104597725A CN201510084924.9A CN201510084924A CN104597725A CN 104597725 A CN104597725 A CN 104597725A CN 201510084924 A CN201510084924 A CN 201510084924A CN 104597725 A CN104597725 A CN 104597725A
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Abstract
The invention discloses a vacuum chamber of a capillary discharge EUV light source and relates to the technical field of capillary discharge EUV light sources. The vacuum chamber comprises a vacuum chamber I and a vacuum chamber II, wherein one end of the vacuum chamber I is connected with a discharging chamber; the other end of the vacuum chamber I is communicated with the vacuum chamber II; a capillary tube of the EUV light source is arranged at the joint of the discharging chamber and the vacuum chamber I; a collection mirror bracket is arranged at the joint of the vacuum chamber I and the vacuum chamber II; a plurality of grooves are formed in a support rod of the collection mirror bracket and are used for mounting an optical collection mirror of a collection system; the tail end of the vacuum chamber II is connected with a photo-etching machine lighting system; a window is formed in the wall of the tail end; the extreme ultraviolet emitted by the capillary tube passes through the optical collection system, is focused in the center of the window and enters the lighting system through the window. The vacuum chamber is designed for a multi-layer wolte-I type optical collection system; compared with the conventional vacuum chamber, the vacuum chamber is high in vacuum degree and high in collection efficiency.
Description
Technical field
The present invention relates to capillary discharging EUV light source technology.
Background technology
In order to realize the great-leap-forward development of China's VLSI (very large scale integrated circuit), the year two thousand twenty is realized 45nm ~ 22nm groove and plans as the Long-and Medium-term Development of China's microelectronic industry by country, and it is special to have formulated national science and technology key special subjects 02 thus.The decades in past, microelectronic industry develops rapidly, integrated circuit minimum feature size to determine on a wafer can be integrated number of transistors, also determine integrated circuit travelling speed and memory capacity.Photoetching technique, as the technical foundation of integrated circuit, is the key factor determining integrated circuit speed of development.The physics limit R of litho machine resolution determines the minimum feature size of integrated circuit, and the physics limit R of litho machine resolution determines the minimum feature size of integrated circuit, can reduce process factor k by resolution enhance technology
1, or reduce photo-etching machine exposal wavelength X, or improve the method for numerical aperture NA, improve litho machine resolution R.Wherein, reducing photo-etching machine exposal wavelength is one of main method.Extreme ultraviolet lithography adopts 13.5nm (2% bandwidth) radiant light as exposure light source, is most possibly to realize one of even following Next Generation Lithography of 16nm node.
For large-scale industrial production (HVM) various critical component in EUV lithography machine, such as light source, collection mirror, mask plate, photoresist etc., its performance parameter is more harsh compared with the parts in conventional lithographic machine, testing conditions is more complicated, needs to adopt 13.5nm light source detection radiation of light source characteristic and power stability, collection mirror surfaceness, surface precision, mask plate precision, photoresist to parameters such as 13.5nm (2% bandwidth) radiometric response sensitivity.Detection EUV light source claimed structure and easy and simple to handle, power and moderate cost, job costs are cheap, and power stability is high simultaneously, and the high power EUV light source of routine is bulky, expensive, operating cost is high, is not suitable as test light source.Therefore, the light source developing a kind of satisfied detection becomes very important, and this had both met Present Domestic technical foundation, and this also can provide technical support for next step realizes large-scale industrial production EUV light source.
Capillary discharging EUV lithography light source refers to and adopts Xe medium, obtain 13.5nm (2% bandwidth) radiant light in capillary discharging Z constriction mechanism to export, the radiant light of 13.5nm (2% bandwidth) wavelength can realize the even less photoetching line of 22nm.In capillary discharging process, high voltage can make to form one deck Xe plasma sheath along inner surface wall in kapillary, by the heavy current of plasma during main pulse electric discharge, by self-field effect, produce powerful Lorentz force, make plasma radially constriction (being referred to as Z constriction).In the process of plasma compression, plasma is subject to repulsive force, Ohmic heating simultaneously, and plasma temperature is raised, and collision Xe ion produces the Xe ion of more high-valence state, when plasma compression is minimum to radius ~ 300 μm, now will realize EUV radiant light and export.Plasma compression is a very thin plasma column to the plasma in kapillary during least radius, a pointolite is all can be considered by small for each in this plasma column section, this pointolite will in surrounding 4 π spatial angle range uniform radiates EUV radiation light, the EUV radiant light that capillary discharging is formed, through follow-up extreme ultraviolet collection optical system, be imaged on intermediate focus IF point, thus 13.5nm (2% bandwidth) radiant light realizing the certain power of IF point exports.Capillary discharging Z constriction EUV light source has less dimension of light source, good power stability and spatial stability, and Technical comparing is simple simultaneously, but has more chip during electric discharge, and this can solve by going chip system 5.In sum, capillary discharging Z constriction EUV light source has good stability, is one of current main technical schemes as detection EUV light source.
For capillary discharging EUV light source, require the electrode in light source works process in arc chamber, insulation course, the collection optical system in vacuum chamber, go chip system 5, detection system etc. to be in vacuum environment.Therefore, need to design a set of vacuum system, make whole light source meet condition of work.Conventional vacuum chamber is generally independent for meeting a certain job requirement, and design need the cavity reaching certain vacuum degree.And for capillary discharging EUV light source, capillary discharging radiant light is dispersed along 2 π solid angles, this just needs this part light to collect.In order to ensure collection efficiency, collection optical system central shaft should be symmetrical with kapillary central shaft.Meanwhile, in order to make to collect the least possible being in the light of mirror, the installation degree of accuracy of collecting mirror also has very high requirement.Therefore, first the vacuum chamber of native system should have the function of accurately installing collection optical system, and these are different from conventional vacuum chamber.On the other hand, in capillary discharging process, while generation 13.5nm radiant light exports, also a certain amount of chip can be produced, these chips can destroy collection optical system surface, with this understanding, should install one and go chip system 5 in the middle of collection optical system and kapillary, this just requires that the empty room of reality has and accurately installs and locate the function of going chip system 5, and this is not identical with conventional vacuum chamber yet.
Summary of the invention
The object of the invention is the collection optical system not being suitable for multilayer wolte-I type in order to solve conventional vacuum chamber, causing the problem that collection efficiency is low, a kind of vacuum chamber of capillary discharging EUV light source is provided.
The vacuum chamber of a kind of capillary discharging EUV light source of the present invention comprises vacuum chamber I1 and vacuum chamber II2 two parts, one end of vacuum chamber I1 connects arc chamber, the other end is connected with vacuum chamber II2, the junction of arc chamber and vacuum chamber I1 junction and vacuum chamber I1 and vacuum chamber II2 all seals, in arc chamber and vacuum chamber I1 junction, be provided with the kapillary 3 of EUV light source, namely the central shaft of this kapillary 3 is the central shaft of EUV light source, the junction of vacuum chamber I1 and vacuum chamber II2 is provided with collects mirror support 4, this collection mirror support 4 comprises two concentric metal rings support bar identical with multiple structure, described two concentric metal rings and multiple support bar are positioned at same plane, and this plane and described central axis, and the center of circle of described two concentric metal rings is positioned on described central shaft, the two ends of each support bar are fixedly connected with two concentric metal rings respectively, multiple support bar is centered by the center of circle of becket, equally radial distribution, support bar has multiple groove, for each support bar, its each groove is for installing one deck optical collection mirror of collection system, the end of vacuum chamber II2 is for connecting illuminator, the wall of described end is provided with window, the extreme ultraviolet that kapillary 3 sends focuses on this window after collection optical system, and enter illuminator by this window, the wall of vacuum chamber I1 and vacuum chamber II2 is provided with venthole 6, for connecting vacuum pump, vacuum chamber I1 is also provided with air admission hole 7, for passing into argon gas in vacuum chamber.
Vacuum chamber of the present invention, the collection optical system of multilayer wolte-I type can be installed in its inside, this collection optical system is made up of the barrel-shaped catoptron of multilayer, the barrel-shaped catoptron of described multilayer is coaxial embedded successively, every layer of catoptron is formed by connecting by an Ellipsoid of gyration and a hyperboloid of revolution, and this Ellipsoid of gyration and this hyperboloid of revolution have a public geometrical focus, i.e. public focus, the public focus of each layer catoptron overlaps, and described public focus is extreme ultraviolet after collection optical system, focuses on point on window.Outside from central shaft, the distance between adjacent two layers catoptron increases gradually, and correspondingly, collect on the support bar of mirror support 4, the spacing of adjacent two grooves also increases gradually.The quantity of support bar is generally between 3 to 8, and the width of support bar is as far as possible little, to reduce the loss of extreme ultraviolet.The size of groove and the thickness of catoptron match, to guarantee the installation accuracy of catoptron.
During work, by vacuum system to arc chamber and vacuum chamber, obtain 10
-3the vacuum of Pa magnitude, experimentally need again to be filled with the gases such as appropriate Xe gas in kapillary 3, Xe, Ar or He gas all controls the gas flow be filled with in kapillary by independently flowmeter, the gas that three flowmeters export, by an air valve mixing, is filled with in kapillary.After kapillary and vacuum chamber internal gas pressure are stablized, power-supply system is discharged, and forms high-temperature high-density plasma, realize 13.5nm radiant light to export, this 13.5nm radiant light, after collection optical system reflection, focuses on window, and enters follow-up illuminator through this window.
Vacuum chamber of the present invention designs for the collection optical system of above-mentioned multilayer wolte-I type, compared with the vacuum chamber of routine, not only have good vacuum tightness, and collection efficiency is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of the vacuum chamber of a kind of capillary discharging EUV light source of the present invention;
Fig. 2 is the structural representation of the collection optical system described in embodiment one.
Embodiment
Embodiment one: composition graphs 1 illustrates present embodiment, the vacuum chamber of a kind of capillary discharging EUV light source described in present embodiment, comprise vacuum chamber I1 and vacuum chamber II2 two parts, one end of vacuum chamber I1 connects arc chamber, the other end is connected with vacuum chamber II2, the junction of arc chamber and vacuum chamber I1 junction and vacuum chamber I1 and vacuum chamber II2 all seals, in arc chamber and vacuum chamber I1 junction, be provided with the kapillary 3 of EUV light source, namely the central shaft of this kapillary 3 is the central shaft of EUV light source, the junction of vacuum chamber I1 and vacuum chamber II2 is provided with collects mirror support 4, this collection mirror support 4 comprises two concentric metal rings support bar identical with multiple structure, described two concentric metal rings and multiple support bar are positioned at same plane, and this plane and described central axis, and the center of circle of described two concentric metal rings is positioned on described central shaft, the two ends of each support bar are fixedly connected with two concentric metal rings respectively, multiple support bar is centered by the center of circle of becket, equally radial distribution, support bar has multiple groove, for each support bar, its each groove is for installing one deck optical collection mirror of collection system, the end of vacuum chamber II2 is for connecting illuminator, the wall of described end is provided with window, the extreme ultraviolet that kapillary 3 sends focuses on this window after collection optical system, and enter illuminator by this window, the wall of vacuum chamber I1 and vacuum chamber II2 is provided with venthole 6, for connecting vacuum pump, vacuum chamber I1 is also provided with air admission hole 7, for passing into argon gas in vacuum chamber.
In present embodiment, vacuum chamber I1 is cylindrical, vacuum chamber II2 is conical, and an end face of vacuum chamber I1 is connected with arc chamber, and another end is communicated with the bottom surface of vacuum chamber II2, the shape of vacuum chamber I1 and vacuum chamber II2 is mainly in order to coordinate collection optical system, extreme ultraviolet radiation is after the collection mirror reflection of collection optical system, and the angle of divergence is compressed, in the state focused on, the vacuum chamber II2 of conical structure, when not sheltering from extreme ultraviolet, reduces the volume of whole vacuum chamber.
Collection optical system adopts 10 layers of catoptron to realize, and correspondingly, each support bar of collection mirror support 4 has 10 grooves, and this groove can be circular arc along its length, and arc radius is equal with the radius of the catoptron installed in this groove.
Embodiment two: composition graphs 2 illustrates present embodiment, present embodiment is the further restriction of the vacuum chamber to a kind of capillary discharging EUV light source described in embodiment one, in present embodiment, chip system 5 is also provided with between kapillary 3 and collection mirror support 4, described chip system 5 of going comprises air jet system 5-1 and tinsel cold-trap 5-2, this tinsel cold-trap 5-2 comprises the copper tinsel of multilayer, every layer of tinsel is circular conical surface, multiple layer metal paillon foil and EUV light source are coaxially and nested successively, the open side of multiple layer metal paillon foil is towards kapillary 3, air jet system 5-1 is between kapillary 3 and tinsel cold-trap 5-2, the jet direction of air jet system 5-1 and the central axis of EUV light source.
In present embodiment, more chip can be produced when kapillary 3 discharges, be changed the track of chip by air jet system 5-1 gas jet, make itself and light radiation direction not parallel, the chip changed after track can be attached on tinsel, thus reach the object of chip.
Embodiment three: composition graphs 1 illustrates present embodiment, present embodiment is the further restriction of the vacuum chamber to a kind of capillary discharging EUV light source described in embodiment one, in present embodiment, detection system 8 is also provided with in the inside of vacuum chamber II2, for the dynamic monitoring to EUV light source flash-over characteristic and radiant light, described detection system 8 is fixed in vacuum chamber II2 by detection system support.
Claims (3)
1. the vacuum chamber of a capillary discharging EUV light source, it is characterized in that: it comprises vacuum chamber I (1) and vacuum chamber II (2) two parts, one end of vacuum chamber I (1) connects arc chamber, the other end is connected with vacuum chamber II (2), the junction of arc chamber and vacuum chamber I (1) junction and vacuum chamber I (1) and vacuum chamber II (2) all seals, in arc chamber and vacuum chamber I (1) junction, be provided with the kapillary (3) of EUV light source, the central shaft of this kapillary (3) is namely the central shaft of EUV light source, vacuum chamber I (1) is provided with the junction of vacuum chamber II (2) and collects mirror support (4), this collection mirror support (4) comprises two concentric metal rings support bar identical with multiple structure, described two concentric metal rings and multiple support bar are positioned at same plane, and this plane and described central axis, and the center of circle of described two concentric metal rings is positioned on described central shaft, the two ends of each support bar are fixedly connected with two concentric metal rings respectively, multiple support bar is centered by the center of circle of becket, equally radial distribution, support bar has multiple groove, for each support bar, its each groove is for installing one deck optical collection mirror of collection system, the end of vacuum chamber II (2) is for connecting illuminator, the wall of described end is provided with window, the extreme ultraviolet that kapillary (3) sends focuses on this window after collection optical system, and enter illuminator by this window, the wall of vacuum chamber I (1) and vacuum chamber II (2) is provided with venthole, for connecting vacuum pump, (1) is also provided with air admission hole to vacuum chamber I, for passing into argon gas in vacuum chamber.
2. the vacuum chamber of a kind of capillary discharging EUV light source according to claim 1, it is characterized in that: between kapillary (3) and collection mirror support (4), be also provided with chip system (5), described chip system (5) of going comprises air jet system (5-1) and tinsel cold-trap (5-2), this tinsel cold-trap (5-2) comprises the copper tinsel of multilayer, every layer of tinsel is circular conical surface, multiple layer metal paillon foil and EUV light source are coaxially and nested successively, the open side of multiple layer metal paillon foil is towards kapillary (3), air jet system (5-1) is positioned between kapillary (3) and tinsel cold-trap (5-2), the jet direction of air jet system (5-1) and the central axis of EUV light source.
3. the vacuum chamber of a kind of capillary discharging EUV light source according to claim 1, it is characterized in that: be also provided with detection system (8) in the inside of vacuum chamber II (2), for the dynamic monitoring to EUV light source flash-over characteristic and radiant light, described detection system (8) is fixed in vacuum chamber II (2) by detection system support.
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| CN201510084924.9A CN104597725A (en) | 2015-02-16 | 2015-02-16 | Vacuum chamber of capillary discharge EUV light source |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496538A (en) * | 2011-11-28 | 2012-06-13 | 哈尔滨工业大学 | Discharge electrode used for capillary extreme ultraviolet photoetching light source |
| CN102496551A (en) * | 2011-11-28 | 2012-06-13 | 哈尔滨工业大学 | Method for generating EUV (extreme ultraviolet) radiation light by using capillary discharge electrode UV (ultraviolet) photoetching light source |
| CN103237401A (en) * | 2013-04-01 | 2013-08-07 | 哈尔滨工业大学 | Fragment removing system for removing fragments in ultra-violet lithography illumination source of capillary discharge electrode |
| CN103869633A (en) * | 2014-04-11 | 2014-06-18 | 哈尔滨工业大学 | Extreme ultraviolet lithography light source collection and illumination system |
-
2015
- 2015-02-16 CN CN201510084924.9A patent/CN104597725A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496538A (en) * | 2011-11-28 | 2012-06-13 | 哈尔滨工业大学 | Discharge electrode used for capillary extreme ultraviolet photoetching light source |
| CN102496551A (en) * | 2011-11-28 | 2012-06-13 | 哈尔滨工业大学 | Method for generating EUV (extreme ultraviolet) radiation light by using capillary discharge electrode UV (ultraviolet) photoetching light source |
| CN103237401A (en) * | 2013-04-01 | 2013-08-07 | 哈尔滨工业大学 | Fragment removing system for removing fragments in ultra-violet lithography illumination source of capillary discharge electrode |
| CN103869633A (en) * | 2014-04-11 | 2014-06-18 | 哈尔滨工业大学 | Extreme ultraviolet lithography light source collection and illumination system |
Non-Patent Citations (1)
| Title |
|---|
| 徐强: "毛细管放电Z箍缩Xe等离子体EUV光源研究", 《中国博士学位论文全文数据库 信息科技辑》, no. 12, 15 December 2014 (2014-12-15) * |
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Application publication date: 20150506 |