CN103869633A - Extreme ultraviolet lithography light source collection and illumination system - Google Patents
Extreme ultraviolet lithography light source collection and illumination system Download PDFInfo
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- CN103869633A CN103869633A CN201410145987.6A CN201410145987A CN103869633A CN 103869633 A CN103869633 A CN 103869633A CN 201410145987 A CN201410145987 A CN 201410145987A CN 103869633 A CN103869633 A CN 103869633A
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- extreme ultraviolet
- reflector group
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- ultraviolet lithography
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Abstract
The invention provides an extreme ultraviolet lithography light source collection and illumination system. The extreme ultraviolet lithography light source collection and illumination system comprises two parts including a front-end reflection mirror set and a rear-end reflection mirror set, wherein the front-end reflection mirror set and the rear-end reflection mirror set are mounted and fixed by a supporting structure. Each layer of a reflection surface in the front-end reflection mirror set is formed by rotating different parabolic segments around the optical axis; the center of an extreme ultraviolet light source is located on a focal plane of a parabola and is located on the optical axis. Light emitted by a light source is reflected by each parabola to be emitted by a parallel light path; each annular conical surface of the rear-end reflection mirror set is used for separating the parallel light path emitted by the front-end reflection mirror set into a plurality of narrow and thin parallel light paths and all the parallel light paths are reflected to a final illumination point. According to the extreme ultraviolet lithography light source collection and illumination system, the light is collected and the function of an illumination system can also be realized to finish light bean reshaping and spectrum filtering work a good illumination condition is provided for the aeration of a mask plate; a collection system and the illumination system are integrated so that the whole working space can be diminished and the structure of an optical system is compact.
Description
Technical field
The invention belongs to extreme ultraviolet advanced photolithography techniques field, relate to a kind of extreme Ultraviolet Lithography Source and collect and illuminator, for the ray-collecting of plasma EUV light source and the shaping of focused light spot and spectral filtering, to realize the illuminating effect good to mask plate.
Background technology
Extreme ultraviolet/soft X-ray lithography is considered to one of photoetching technique most with prospects of future generation, and light source collection system and illuminator are the important component parts of extreme ultraviolet photolithographic machine.
From purposes, collection system is not pure imaging system, its object is not plasma light source to be imaged onto to intermediate focus place, but the extreme ultraviolet light simply it being sent converges to intermediate focus place, and meeting under the prerequisite of image space aperture angle requirement, make as much as possible object space aperture angle effectively maximize and then reach higher collection efficiency.Be subject to the impact of light source characteristic and mirror body deformability and mechanical support structure, the common out-of-shape of speck forming in intermediate focus place, Luminance Distribution inequality, except effective exposure wavelength (wavelength centered by 13.5nm, 2% wavestrip width) outside, spectral line outside other service bands is also introduced into, the infrared radiation can not be ignored that particularly system heat absorption intensification brings, so this speck can not directly be used for the mask plate that throws light on, need between the two, add an illuminator, light spot energy homogenising and spectrum are purified, and then required lighting condition and the exposure requirement of formation mask plate.
No matter be transmission-type illuminator or reflective illuminator, conventionally all can adopt a kind of typical compound eye type structure, the compound eye Lighting Design thought of broad sense for: the light beam that actual light source is sent is divided into numerous beamlets, because the cross section of these beamlets is narrower, so energy approaches and is uniformly distributed, afterwards, these beamlets are under spatial order and symmetric effect, carry out complementary intensity stack in illumination place, homogeneity is further improved, by being plated in the filtration of rete of specular surface, operation wavelength can efficiently be passed through, other spectral coverage wavelength obtains obvious filtering.
The generation of EUV light source is mainly adopted in two ways: laser plasma light source (LPP) and plasma discharging light source (DPP), the collection system current and collocation of DPP light source adopts Wolter-I type glancing incidence catoptron, due to its structural behaviour be better than at present serviceable life with the normal incidence of LPP collocation and collect catoptron, so Wolter-I type collection system is also expected to and the use of arranging in pairs or groups of LPP light source.
But Wolter type collection system is due to its special version, cause the axial distance of itself and light source very near, to light source, the disappear design of assorted system brings certain difficulty for this, and the hyperbolic reflecting surface difficulty of processing of mirror body leading portion is large, aspect manufacture and cost, this is the problem that must will consider.The extreme ultraviolet compound eye type illuminator that initial stage proposes, because processing and the assembly difficulty of its each small mirror unit are large, does not obtain practicality accreditation widely.
Summary of the invention
The problem occurring for prior art, the present invention collects at Wolter under the design philosophy of catoptron and compound eye type illuminator, propose a kind ofly novel to collect and complete simultaneously for extreme ultraviolet light the housing nested type system that illumination is optimized, this system can meet photoetching requirement in design, and utilize existing process technology more easily to realize, and can reduce manufacturing cost.
For achieving the above object, the present invention adopts following technical scheme:
A kind of extreme Ultraviolet Lithography Source is collected and illuminator, comprises front terminal reflector group and rear terminal reflector group two parts, and between front terminal reflector group and rear terminal reflector group, install and fix by star-like supporting construction, wherein:
Described front terminal reflector group and rear terminal reflector group all comprise equal number, the housing catoptron of arranging is installed from internal layer to skin with nested form, there is relation one to one in certain layer of housing catoptron of front terminal reflector group and the housing catoptron of the corresponding number of plies of rear terminal reflector group wherein in light path, and be engaged togather by supporting construction;
The reflecting surface of every layer of housing catoptron in described front terminal reflector group is all that certain para-curve rotates and forms around optical axis, light source is positioned at parabolical focal plane and is on optical axis, every layer of para-curve has 6 ° of-8 ° of ray-collecting angles, and minimum collection angle is 20 °, and maximum collection angle is 60 °.After the each para-curve reflection of the premenstrual terminal reflector group of light that EUV light source sends, penetrate with parallel light path, and from outermost layer para-curve to innermost layer para-curve, the slope of their emitted parallel rayss is descending to be reduced successively;
Every layer of housing catoptron in described rear terminal reflector group is ring-band shape circular conical surface, the coaxial setting of each ring-band shape circular conical surface, wherein each ring-band shape circular conical surface is the continuous line segment of multistage along shaft section, each circular conical surface bus slope changes successively, form many ribs multistage conical surface, thereby the directional light that front end reflecting surface is penetrated along shaft section is divided into multiple thin narrow parallel light paths, last each housing catoptron reflexes to final lighting point place the thin narrow parallel light path projecting on it, because the slope of each housing catoptron changes successively, ensure that multiple thin narrow parallel light paths are superimposed at lighting point place.
In the present invention, the front terminal reflector group of whole system and rear terminal reflector group are made up of 5-6 layer housing catoptron, object space aperture angle is 60 °, image space aperture angle is determined (being generally 10 °-15 °) according to lighting demand, system axial length 400m, radical length 700mm, electric light source and lighting point distance is between 1000-1500mm, and light source and system front end catoptron group distance are 150mm.
In the present invention, adopt following principle for method for designing: one, adopt the method for ecto-entad design, that is: first determine outermost structural parameters, determine successively again the structural parameters of internal layer, each layer of para-curve will accurately be connected at the collection angle of object space, and every layer of housing catoptron can not produce and block the light path of each layer of housing catoptron of periphery.Its two, the method for designing after adopting previously again, that is: designed after the para-curve of every layer of front terminal reflector group, thereupon according to its structure, determines rear many ribs of terminal reflector group multistage circular cone reflecting surface thereafter.
In the present invention, described extreme Ultraviolet Lithography Source is collected and illuminator system is connected under rational condition meeting each housing catoptron marginal ray, has very high-freedom degree in general structure design, and each housing catoptron can carry out separately design and optimization.Each para-curve has four design freedoms, be respectively: light source is adjustable with respect to the position of focus on para-curve focal plane, before light source distance, the axial distance of group catoptron is adjustable, system is adjustable to the maximum collection angle of light source, and the collection angle scope of each layer of housing catoptron is adjustable.Many ribs multistage circular conical surface also has four design freedoms, is respectively: the position of first mirror unit is adjustable, and the size of each mirror unit is adjustable, and the slope of each mirror unit is adjustable (having two degree of freedom).
In the present invention, described para-curve can change the slope size from its emitted parallel rays along optical axis by amendment equation parameter, light slope size determines its incident angle on front group of catoptron, and the size of incident angle is determining the reflectivity of reflecting surface, therefore adjusting the parallel rays slope that each para-curve gets is necessary to optimizing mass reflex rate.
In the present invention, described many ribs multistage circular conical surface is by size and the bus slope of the each mirror of change unit, can control size and the numerical aperture angle of illumination light spot, overall light harvesting degree is met the demands, wherein the size of mirror unit determines the size of illumination hot spot, the two is geometrically becoming certain proportionate relationship, and the slope of mirror unit determines that illumination hot spot, in the position of optical axis, determines image space aperture angle.When design, taking intermediate mirror unit as benchmark, the parallel light path of its reflection is just in time overlapped with required illumination hot spot in the cross section at optical axis place, afterwards, adjust size and the slope of other mirror units, make the parallel light path of their reflections also overlapping at required illumination hot spot place.
In the present invention, the ray-collecting angle of the internal layer shell catoptron of described extreme Ultraviolet Lithography Source collection and illuminator is less than the ray-collecting angle of outer casing catoptron, thereby internal layer mirror axis is consistent to contraction in length and with skin, has ensured the requirement of the fixing aspect of each housing installation.
The present invention has following beneficial effect:
1, the present invention makes extreme ultraviolet photolithographic machine light source collection system in carrying out ray-collecting, also can realize the function of illuminator, complete shaping and the spectral filtering work of light beam, for the exposure of mask plate provides good lighting condition, collection system and illuminator are integrated together, can reduce overall work space and make optical system structure compacter.
2, than hyperbolic mirror and the ellipsoidal mirror of Wolter type collection system, and the reflection type compound eye illuminator of existing complexity, the present invention adopts the para-curve surfaces of revolution and Axicon mirror unit, more easily processes and assembles, the manufacturing cost of having reduced.
Brief description of the drawings
Fig. 1 is the two-dimentional light channel structure sketch of extreme Ultraviolet Lithography Source collection provided by the present invention and illuminator;
Fig. 2 is the designed many ribs multistage circular conical surface catoptron of the present invention and the illumination principle of optimality thereof;
Fig. 3 is the designed five layers of para-curve surfaces of revolution that are positioned at system front end of the present invention;
Fig. 4 is the circular conical surface of rib multistage more than the five layers catoptron of the designed system that the is positioned at rear end of the present invention;
In figure, 1-light source, terminal reflector group before 2-, terminal reflector group after 3-, the 4-hot spot place of throwing light on, 5-circular conical surface catoptron unit, the parallel beam that 6-reflects through para-curve, the thin narrow parallel beam of 7-.
Embodiment
In conjunction with Fig. 1 and Fig. 2, provide one embodiment of the present of invention, mainly as further description of the present invention, but not be used for limiting scope of the present invention.
As shown in Figure 1, the extreme Ultraviolet Lithography Source that present embodiment provides is collected and illuminator comprises light source 1, front terminal reflector group 2, rear terminal reflector group 3 and illumination hot spot place 4.The illuminating aperture angle of mask plate will mate with the object space aperture angle of optical projection system, can be according to this condition, in tentatively definite present embodiment, the image space numerical aperture of light source collection and illuminator is 0.3 (being approximately the half angle radian value of system rear end face to illumination light spot 4).If light source adopts laser plasma light source (LPP), due to its isoionic small-sized (500um), can be similar to and regard pointolite as, the object space aperture angle in present embodiment should be the bigger the better, but, be subject to the restriction of overall dimensions, axial distance between electric light source and lighting point should have individual upper limit maximal value, once maximal value is determined, along with the increase of object space aperture angle, collection in present embodiment and illuminator will be the closer to light sources, this can bring difficulty to design and the installation of the assorted system (DMT) that disappears between light source and collection system in extreme ultraviolet photolithographic machine, the object space aperture angle that is system in present embodiment will have a higher limit, according to design experiences, tentatively be decided to be 60 ° (being approximately the half angle radian value of system front end in the face of light source 1).For avoiding producing larger deformation induced by gravity, the axial length of whole system and diameter of section suggestion are no more than 0.5m.
According to the design philosophy of extreme ultraviolet photolithographic Woter type collection system nested type catoptron, we still adopt multilayer nest sandwich type element catoptron to be optimized distribution to the object space aperture angle of 60 °, each housing catoptron carries out independent light reflection and convergence to a part of incident angle, different from Wolter type collection system is, before each, the reflecting surface of terminal reflector group 2 is not hyperboloid, but para-curve rotates the reflecting surface forming along optical axis, light source 1 is positioned at a certain position, para-curve focal plane, light is after each para-curve reflection, become a branch of bundle parallel light path.
The angle (light slope) of each directional light and optical axis reduces to innermost layer para-curve successively from outermost layer para-curve, and the slope of each parallel beam is chosen and wanted suitably.This be because: light is from light source 1, after para-curve surfaces of revolution catoptron and circular conical surface catoptron two secondary reflections, arrive lighting point, for every one deck catoptron, image space and object space aperture angle are fixed, the overall angle of two secondary reflection deflections is also certain, two reflection deflection angles need to reasonably distribute so, so that mass reflex rate maximum.
Because every layer of catoptron housing is about optical axis Rotational Symmetry, paraboloid of revolution equation can be reduced to the two-dimensional square formula of system longitudinal cross-section.
Paraboloid of revolution bus equation taking light source 1 position as initial point as:
(y+h)∧2＝2p*(x+p/2) (1)；
P, h are respectively transversal displacement and the vertical misalignment amount of light source 1 to para-curve summit.
On bus, the slope of every bit is:
y′＝p/(y+h) (2)。
Parabolic equation can be completed by follow procedure instruction:
K=20; Parallel beam and the optical axis included angle of the outgoing of % outermost layer
1=150; % light source and outermost layer housing front end face axial distance
U=60; % outermost layer catoptron collection angle maximal value
v＝(u+k)/2；
p＝2*1/((1/tan(v/180*pi))∧2-1)；
h＝p/tan(v/180*pi)-1*tan(u/180*pi)；
X=150:300; % para-curve axial length
Y=sqrt (2*p* (x+p/2))-h; % outermost layer housing parabolic equation
As shown in terminal reflector group 3 after in Fig. 1, the parallel beam penetrating from every one deck para-curve is all got to many ribs multistage circular conical surface of this layer of rear end.Many ribs multistage circular conical surface is made up of the circular conical surface catoptron unit 5 of multiple ring-band shapes, these mirror units are divided into again many thin narrow parallel beams 7 each parallel beam reflecting through para-curve 6, each mirror unit carries out separately primary event to each thin arrow beam of light, after reflection, be still the identical parallel thin arrow beam of light in cross section, by changing the inclination slope of each mirror unit, can make these many thin arrow beam of lights converge in identical required illumination hot spot 4, because the bus slope (about optical axis) of each mirror unit is different, should be using middle mirror unit as design reference standard, and the size of intermediate mirror unit and slope size are determined by the spatial relation of the spot size throwing light on and hot spot and this mirror unit, once this reference mirror unit determines, the size of other mirror unit and slope have also just been determined.
Claims (9)
1. extreme Ultraviolet Lithography Source is collected and illuminator, it is characterized in that described system comprises front terminal reflector group and rear terminal reflector group two parts, and between front terminal reflector group and rear terminal reflector group, install and fix by supporting construction, wherein:
Described front terminal reflector group and rear terminal reflector group all comprise equal number, the housing catoptron of arranging is installed from internal layer to skin with nested form, there is relation one to one in certain layer of housing catoptron of front terminal reflector group and the housing catoptron of the corresponding number of plies of rear terminal reflector group wherein in light path, and be engaged togather by supporting construction;
The reflecting surface of every layer of housing catoptron in described front terminal reflector group is all rotated and forms around optical axis by para-curve;
Every layer of housing catoptron in described rear terminal reflector group is ring-band shape circular conical surface, the coaxial setting of each ring-band shape circular conical surface, and wherein each ring-band shape circular conical surface is the continuous line segment of multistage along shaft section;
After the each para-curve reflection of the premenstrual terminal reflector group of light that EUV light source sends, penetrate with parallel light path, the each ring-band shape circular conical surface of rear terminal reflector group penetrates front end reflecting surface directional light along shaft section is divided into multiple thin narrow parallel light paths, and all reflexes to final lighting point place.
2. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, it is characterized in that described light source is positioned at parabolical focal plane and is on optical axis.
3. extreme Ultraviolet Lithography Source according to claim 1 and 2 is collected and illuminator, it is characterized in that described para-curve has the ray-collecting angle of 6 °-8 °.
4. extreme Ultraviolet Lithography Source according to claim 3 is collected and illuminator, it is characterized in that described parabolical minimum collection angle is 20 °, and maximum collection angle is 60 °.
5. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, and described in it is characterized in that, from outermost layer para-curve to innermost layer para-curve, the slope of their emitted parallel rayss is descending to be reduced successively.
6. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, it is characterized in that described front terminal reflector group and rear terminal reflector group are made up of 5-6 layer housing catoptron.
7. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, and the object space aperture angle that it is characterized in that described system is 60 °, and image space aperture angle is 10 °-15 °.
8. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, it is characterized in that described system axial length 400m, radical length 700mm.
9. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, it is characterized in that described system source and lighting point distance are between 1000-1500mm, and light source and front terminal reflector group distance are 150mm.
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Cited By (3)
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| CN104597725A (en) * | 2015-02-16 | 2015-05-06 | 哈尔滨工业大学 | Vacuum chamber of capillary discharge EUV light source |
| CN104866680A (en) * | 2015-06-01 | 2015-08-26 | 哈尔滨工业大学 | Optimum spacing obtaining method for cooling pipelines on back side of mirror body in extreme ultraviolet collecting system |
| CN114217509A (en) * | 2021-12-16 | 2022-03-22 | 哈尔滨工业大学 | Mechanical compound eye rotation driving device based on stay-supported mechanism |
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