CN104594813A - Polycrystalline diamond composite sheet and treatment method thereof - Google Patents
Polycrystalline diamond composite sheet and treatment method thereof Download PDFInfo
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- CN104594813A CN104594813A CN201510021969.1A CN201510021969A CN104594813A CN 104594813 A CN104594813 A CN 104594813A CN 201510021969 A CN201510021969 A CN 201510021969A CN 104594813 A CN104594813 A CN 104594813A
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Abstract
The invention provides a polycrystalline diamond composite sheet and a treatment method thereof. The polycrystalline diamond composite sheet comprises a hard alloy substrate, a polycrystalline diamond layer and protection layers, wherein the polycrystalline diamond layer is compounded on the hard alloy substrate and comprises a layer without residual metal and a layer with the residual metal; the layer with the residual metal is located between the layer without the residual metal and the hard alloy substrate; the thickness of the polycrystalline diamond layer is 1.9mm-2.2mm; the thickness of the layer without the residual metal is 30-50 microns; the protection layers cover the bottom surface and all side faces of the hard alloy substrate, and part of the side face of the polycrystalline diamond layer. Compared with the prior art, the removing depth of the residual metal of the polycrystalline diamond layer of the polycrystalline diamond composite sheet provided by the invention is large and the hard alloy substrate is not corroded, so that the stability of the polycrystalline diamond composite sheet in a utilization process is improved and the service life is prolonged.
Description
Technical field
The present invention relates to technical field of superhard material, more particularly, relate to a kind of composite polycrystal-diamond and processing method.
Background technology
Composite polycrystal-diamond is a kind of advanced composite material (ACM) adopting diadust and cemented carbide substrate to sinter under high pressure high temperature condition, and its structure comprises polycrystalline diamond layer and the hard alloy layer as supporter.Wherein, polycrystalline diamond layer has the advantages that hardness is high, abrasion resistance is good, hard alloy layer then improves toughness and the solderability of composite polycrystal-diamond on the whole, and therefore composite polycrystal-diamond becomes the ideal material manufacturing cutting tool, drilling bit and other wear resistant tools.
But, composite polycrystal-diamond is in HP-HT synthesize process, meeting remnant metal in its polycrystalline diamond layer, because the coefficient of thermal expansion of metal is far above diamond, metal residual is in diamond particles gap, and the high temperature that operationally can produce due to composite polycrystal-diamond makes expansion of metal, thus cause micro-crack, accelerate destruction and the wearing and tearing of material, have a strong impact on composite polycrystal-diamond stability in use, reduce the application life of workpiece.Therefore, need to carry out removing of residual metal to composite polycrystal-diamond.
At present, tradition removes the method for residual metal as electrolysis and the acid-hatching of young eggs, due to the restriction of process conditions, removes the degree of depth and reaches after more than 15 μm, is just difficult to leach again; And remove the degree of depth and reach more than 25 μm, then need more than 240 hours, efficiency is extremely low, is not suitable for large-scale operation.Therefore, the problem obtaining the composite polycrystal-diamond removing residual metal is not also solved.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of composite polycrystal-diamond and processing method, the polycrystalline diamond layer residual metal of composite polycrystal-diamond provided by the invention to remove the degree of depth large, the good stability in use procedure, long service life.
The invention provides a kind of composite polycrystal-diamond, comprising:
Cement carbide substrate;
Be compounded in the polycrystalline diamond layer on described cement carbide substrate, described polycrystalline diamond layer comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate; The thickness of described polycrystalline diamond layer is 1.9mm ~ 2.2mm; The thickness removing residual metal layer is 30 μm ~ 50 μm;
Be coated on the topping of cement carbide substrate bottom surface and whole side and polycrystalline diamond layer surface.
Preferably, described topping is polytetrafluoroethylene floor.
Preferably, the thickness of described topping is 0.3mm ~ 1mm.
Preferably, described topping lateral edge exceeds the distance of cement carbide substrate and polycrystalline diamond layer contact plane is 1mm ~ 1.5mm.
Present invention also offers a kind of processing method of composite polycrystal-diamond, comprise the following steps:
A) pending composite polycrystal-diamond is carried out successively surface clean, blasting treatment and EFI plating, obtain the composite polycrystal-diamond being with matcoveredn; Described topping is coated on cement carbide substrate bottom surface and whole side and polycrystalline diamond layer surface;
B) composite polycrystal-diamond of the band matcoveredn obtained is carried out acid dip process, obtain the composite polycrystal-diamond after processing; The polycrystalline diamond layer of the composite polycrystal-diamond after described process comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate.
Preferably, described step b) be specially:
The composite polycrystal-diamond of the band matcoveredn obtained is immersed in acid solution, under the condition stirred, carries out high-temperature high-voltage reaction, obtain the composite polycrystal-diamond after processing.
Preferably, the temperature of described high-temperature high-voltage reaction is 50 DEG C ~ 160 DEG C, and pressure is 5MPa ~ 10MPa, and the time is 1h ~ 48h.
Preferably, described acid is one or more in hydrochloric acid, nitric acid and hydrofluoric acid.
Preferably, the speed of described stirring is 100r/min ~ 180r/min.
The invention provides a kind of composite polycrystal-diamond and processing method, described composite polycrystal-diamond comprises: cement carbide substrate; Be compounded in the polycrystalline diamond layer on described cement carbide substrate, described polycrystalline diamond layer comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate; The thickness of described polycrystalline diamond layer is 1.9mm ~ 2.2mm; The thickness removing residual metal layer is 30 μm ~ 50 μm; Be coated on the topping of cement carbide substrate bottom surface and whole side and polycrystalline diamond layer surface.Compared with prior art, the polycrystalline diamond layer residual metal of composite polycrystal-diamond provided by the invention to remove the degree of depth large, and corrosion can not be produced to cement carbide substrate, thus improve composite polycrystal-diamond stability in use, increase the service life.Testing result shows, the removing the degree of depth and can reach 50 μm of the polycrystalline diamond layer residual metal of composite polycrystal-diamond provided by the invention.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
Fig. 1 is the structural representation of composite polycrystal-diamond provided by the invention;
Fig. 2 is the structural representation that the present invention carries out acid dip process autoclave used;
The scanning electron microscope diagram of the composite polycrystal-diamond polycrystalline diamond layer that Fig. 3 provides for the embodiment of the present invention 1.
Detailed description of the invention
Below in conjunction with the embodiment of the present invention, be clearly and completely described technical scheme of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The invention provides a kind of composite polycrystal-diamond, comprising:
Cement carbide substrate;
Be compounded in the polycrystalline diamond layer on described cement carbide substrate, described polycrystalline diamond layer comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate; The thickness of described polycrystalline diamond layer is 1.9mm ~ 2.2mm; The thickness removing residual metal layer is 30 μm ~ 50 μm;
Be coated on the topping of cement carbide substrate bottom surface and whole side and polycrystalline diamond layer surface.
Refer to Fig. 1, Fig. 1 is the structural representation of composite polycrystal-diamond provided by the invention, and wherein, 1 is cement carbide substrate, and 2 for removing residual metal layer, and 3 for not remove residual metal layer, and 4 is topping.
In the present invention, described cement carbide substrate (1) is cylinder, the present invention is not particularly limited described cement carbide substrate (1), adopt the Hardmetal materials as composite polycrystal-diamond base part well known to those skilled in the art, described cement carbide substrate (1) can improve toughness and the weldability of composite polycrystal-diamond.
In the present invention, described cement carbide substrate is compounded with polycrystalline diamond layer, described polycrystalline diamond layer comprises and removes residual metal layer (2) and do not remove residual metal layer (3), and the described residual metal layer (3) that do not remove is positioned at and removes between residual metal layer (2) and cement carbide substrate (1).In the present invention, the thickness of described polycrystalline diamond layer is 1.9mm ~ 2.2mm, is preferably 2mm.In the present invention, described residual metal is one or both in cobalt and tungsten, and the polycrystalline diamond layer of described residual metal to composite polycrystal-diamond has destruction; In the present invention, the described residual metal layer (3) that do not remove is positioned at and removes between residual metal layer (2) and cement carbide substrate (1), remove residual metal layer (2) described in such structure makes and be positioned at composite polycrystal-diamond outermost layer, improve the stability in composite polycrystal-diamond use procedure, extend its application life.The described thickness removing residual metal layer (2) is 30 μm ~ 50 μm.
In the present invention; described topping (4) is coated on cement carbide substrate (1) bottom surface and whole side and polycrystalline diamond layer surface; such structure makes cement carbide substrate (1) bottom surface and whole side be coated on inside topping; and cement carbide substrate (1) and polycrystalline diamond layer contact plane are inside polycrystalline diamond layer, thus cement carbide substrate (1) is avoided to contact acid solution and be corroded.In the present invention, described topping (4) lateral edge exceeds cement carbide substrate (1) and is preferably 1mm ~ 1.5mm with the distance of polycrystalline diamond layer contact plane, is more preferably 1.2mm.
In the present invention, described topping (4) is preferably polytetrafluoroethylene floor; Described polytetrafluoroethylene (PTFE) is a kind of Prof. Du Yucang macromolecular material using fluorine to replace all hydrogen atoms in polyethylene, has antiacid alkali resistant and resistant to elevated temperatures feature.In the present invention, the preparation method of described polytetrafluoroethylene floor is specially:
Pending composite polycrystal-diamond is carried out successively surface clean, blasting treatment and EFI plating, obtain the composite polycrystal-diamond being with matcoveredn.
Pending composite polycrystal-diamond is carried out surface clean by the present invention; Described surface clean can remove the greasy dirt on composite polycrystal-diamond surface.The method of the present invention to described surface clean is not particularly limited, and preferably adopts acetone cleaning.
After carrying out surface clean to pending composite polycrystal-diamond, the composite polycrystal-diamond after surface clean is carried out blasting treatment by the present invention; The method of the present invention to described blasting treatment is not particularly limited, and the object of described blasting treatment increases the adhesive power between process rear surface and polytetrafluoroethylene floor, extends the durability of polytetrafluoroethylene floor.
After composite polycrystal-diamond after effects on surface cleaning carries out blasting treatment, the composite polycrystal-diamond after blasting treatment is carried out EFI plating by the present invention, obtains polytetrafluoroethylene floor.The present invention is not particularly limited the method that described EFI plates, and the object that described EFI plates is that attached polytetrafluoroethylene floor is plated in the position of topping (4) described in technique scheme.
In the present invention, the thickness of described topping (4) is preferably 0.3mm ~ 1mm, is more preferably 0.5mm.
Present invention also offers a kind of processing method of composite polycrystal-diamond, comprise the following steps:
A) pending composite polycrystal-diamond is carried out successively surface clean, blasting treatment and EFI plating, obtain the composite polycrystal-diamond being with matcoveredn; Described topping is coated on cement carbide substrate bottom surface and whole side and polycrystalline diamond layer surface;
B) composite polycrystal-diamond of the band matcoveredn obtained is carried out acid dip process, obtain the composite polycrystal-diamond after processing; The polycrystalline diamond layer of the composite polycrystal-diamond after described process comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate.
Pending composite polycrystal-diamond is carried out surface clean, blasting treatment and EFI plating by the present invention successively.The present invention is not particularly limited the kind of described pending composite polycrystal-diamond and source, is preferably the 1913 type composite polycrystal-diamonds that Henan Jingrui Superhard Material Co., Ltd. produces; Described pending composite polycrystal-diamond does not remove through residual metal.
Pending composite polycrystal-diamond is carried out surface clean by the present invention, and described surface clean can remove the greasy dirt on composite polycrystal-diamond surface.The method of the present invention to described surface clean is not particularly limited, and preferably adopts acetone cleaning.In the present invention, the time of described surface clean is preferably 30min-60min, is more preferably 45min.
After carrying out surface clean to pending composite polycrystal-diamond, the composite polycrystal-diamond after surface clean is carried out blasting treatment by the present invention.The method of the present invention to described blasting treatment is not particularly limited, and the object of described blasting treatment increases the adhesive power between process rear surface and polytetrafluoroethylene floor, extends the durability of polytetrafluoroethylene floor.In the present invention, the pressure of described blasting treatment is preferably 0.3MPa-0.8MPa, is more preferably 0.5MPa; The time of described blasting treatment is preferably 15s-60s, is more preferably 30s.
After composite polycrystal-diamond after effects on surface cleaning carries out blasting treatment, the composite polycrystal-diamond after blasting treatment is carried out EFI plating by the present invention.The present invention is not particularly limited the method that described EFI plates, and the object of described EFI plating plates attached topping in cement carbide substrate bottom surface and whole side and polycrystalline diamond layer surface.In the present invention, the jet velocity of described EFI plating is preferably 4m/s-8m/s, is more preferably 5m/s; The time of described EFI plating is preferably 60s-120s, is more preferably 80s.
In the present invention, pending composite polycrystal-diamond is carried out successively surface clean, blasting treatment and EFI plating, obtain the composite polycrystal-diamond being with matcoveredn.Described topping is preferably polytetrafluoroethylene floor; Described polytetrafluoroethylene (PTFE) is a kind of Prof. Du Yucang macromolecular material using fluorine to replace all hydrogen atoms in polyethylene, has antiacid alkali resistant and resistant to elevated temperatures feature.In the present invention, the thickness of described topping (4) is preferably 0.3mm ~ 1mm, is more preferably 0.5mm.
After obtaining the composite polycrystal-diamond of band matcoveredn, the composite polycrystal-diamond of the band matcoveredn obtained is carried out acid dip process by the present invention, obtains the composite polycrystal-diamond after processing; The polycrystalline diamond layer of the composite polycrystal-diamond after described process comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate.
In the present invention, the device of described acid dip process is preferably autoclave, and the structural representation of described autoclave as shown in Figure 2; wherein, 5 is autoclave cavity, and 6 is paddle; 7 is carrier, and 8 is acid solution, and 9 is the composite polycrystal-diamond being with matcoveredn.The polycrystalline diamond layer of described composite polycrystal-diamond (9) is upwards placed, and contacts with acid solution (8).
In the present invention; the composite polycrystal-diamond of the band matcoveredn obtained is carried out the process of acid dip process; preferably be specially: the composite polycrystal-diamond of the band matcoveredn obtained is immersed in acid solution; under the condition stirred, carry out high-temperature high-voltage reaction, obtain the composite polycrystal-diamond after processing.
In the present invention, the composite polycrystal-diamond (9) of described band matcoveredn is placed on carrier (7), then acid solution (8) is joined in autoclave cavity (5).In the present invention, the polycrystalline diamond layer of described composite polycrystal-diamond (9) is upwards placed, and contacts with acid solution (8).The addition of described acid solution (8) is 2/3 of described autoclave cavity (5) volume.In the present invention, described acid is preferably one or more in hydrochloric acid, nitric acid and hydrofluoric acid.The source of the present invention to described acid is not particularly limited, and adopts the commercial goods of above-mentioned hydrochloric acid well known to those skilled in the art, nitric acid and hydrofluoric acid.The concentration of acid of the present invention is preferably saturated concentration; Concentration of hydrochloric acid is preferably 36% ~ 38%; Concentration of nitric acid is preferably 69%; Hydrofluoric acid concentration is preferably 40%.
After acid solution (8) is joined autoclave cavity (5), under the condition that the present invention stirs at paddle (6), carry out high-temperature high-voltage reaction.In the present invention, the speed that described paddle (6) carries out stirring is preferably 100r/min ~ 180r/min; Be more preferably 120r/min.In the present invention, the temperature of described high-temperature high-voltage reaction is preferably 50 DEG C ~ 160 DEG C, is more preferably 150 DEG C; The pressure of described high-temperature high-voltage reaction is preferably 5MPa ~ 10MPa, is more preferably 7MPa; The time of described high-temperature high-voltage reaction is preferably 1h ~ 48h; Be more preferably 24h.
In the present invention, the composite polycrystal-diamond of the band matcoveredn obtained is carried out acid dip process, obtain the composite polycrystal-diamond after processing; The polycrystalline diamond layer of the composite polycrystal-diamond after described process comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate.The present invention carries out electron-microscope scanning to the composite polycrystal-diamond after process, and testing result shows, the removing the degree of depth and can reach 50 μm of the polycrystalline diamond layer residual metal of the composite polycrystal-diamond after process.
The invention provides a kind of composite polycrystal-diamond and processing method, described composite polycrystal-diamond comprises: cement carbide substrate; Be compounded in the polycrystalline diamond layer on described cement carbide substrate, described polycrystalline diamond layer comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate; Be coated on the topping of cement carbide substrate bottom surface and whole side and polycrystalline diamond layer surface.Compared with prior art, the polycrystalline diamond layer residual metal of composite polycrystal-diamond provided by the invention to remove the degree of depth large, and corrosion can not be produced to cement carbide substrate, thus improve composite polycrystal-diamond stability in use, increase the service life.Testing result shows, the removing the degree of depth and can reach 50 μm of the polycrystalline diamond layer residual metal of composite polycrystal-diamond provided by the invention.
In order to further illustrate the present invention, be described in detail below by following examples.
Embodiment 1
(1) the 1913 type composite polycrystal-diamonds that Henan Jingrui Superhard Material Co., Ltd. produces are got, first acetone cleaning 40min is adopted, remove the greasy dirt on composite polycrystal-diamond surface, then the composite polycrystal-diamond after cleaning is carried out blasting treatment 35s, under 6m/s condition, carry out EFI plating 90s again, obtain the composite polycrystal-diamond with polytetrafluoroethylene floor; Described polytetrafluoroethylene floor is coated on the cement carbide substrate bottom surface of composite polycrystal-diamond and whole side and polycrystalline diamond layer surface, and the thickness of described polytetrafluoroethylene floor is 0.5mm.
(2) get 50 above-mentioned composite polycrystal-diamonds with polytetrafluoroethylene floor, be placed in autoclave, then add the technical hydrochloric acid that 500mL concentration is 36%.As shown in Figure 2, wherein, 5 is autoclave cavity to the structural representation of described autoclave, and 6 is paddle, and 7 is carrier, and 8 is the technical hydrochloric acid of 36%, and 9 is the composite polycrystal-diamond with polytetrafluoroethylene floor.The polycrystalline diamond layer of described composite polycrystal-diamond (9) is upwards placed, and contacts with the technical hydrochloric acid (8) of 36%.
Then, close autoclave cavity (5), set temperature is 150 DEG C, and pressure is 7MPa, carries out high-temperature high-voltage reaction 24h, opens paddle (6) simultaneously and stirs under the condition of 120r/min.After completion of the reaction, the composite polycrystal-diamond after processing is obtained; The polycrystalline diamond layer of the composite polycrystal-diamond after described process comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate.
(3) to process after composite polycrystal-diamond carry out electron-microscope scanning, testing result as shown in Figure 3, the scanning electron microscope diagram of the composite polycrystal-diamond polycrystalline diamond layer that Fig. 3 provides for the embodiment of the present invention 1.As shown in Figure 3, more than white line for removing residual metal layer, for not remove residual metal layer below white line, the residual metal of the composite polycrystal-diamond provided according to the known embodiment 1 of the thickness removing residual metal layer removes the degree of depth and can reach 50 μm.
Embodiment 2
(1) the 1913 type composite polycrystal-diamonds that Henan Jingrui Superhard Material Co., Ltd. produces are got, first acetone cleaning 45min is adopted, remove the greasy dirt on composite polycrystal-diamond surface, then the composite polycrystal-diamond after cleaning is carried out blasting treatment 40s, under 5m/s condition, carry out EFI plating 100s again, obtain the composite polycrystal-diamond with polytetrafluoroethylene floor; Described polytetrafluoroethylene floor is coated on the cement carbide substrate bottom surface of composite polycrystal-diamond and whole side and polycrystalline diamond layer surface, and the thickness of described polytetrafluoroethylene floor is 1.0mm.
(2) get 50 above-mentioned composite polycrystal-diamonds with polytetrafluoroethylene floor, be placed in autoclave, then add the technical hydrochloric acid that 500mL concentration is 36%.As shown in Figure 2, wherein, 5 is autoclave cavity to the structural representation of described autoclave, and 6 is paddle, and 7 is carrier, and 8 is the technical hydrochloric acid of 36%, and 9 is the composite polycrystal-diamond with polytetrafluoroethylene floor.The polycrystalline diamond layer of described composite polycrystal-diamond (9) is upwards placed, and contacts with the technical hydrochloric acid (8) of 36%.
Then, close autoclave cavity (5), set temperature is 120 DEG C, and pressure is 9MPa, carries out high-temperature high-voltage reaction 24h, opens paddle (6) simultaneously and stirs under the condition of 160r/min.After completion of the reaction, the composite polycrystal-diamond after processing is obtained; The polycrystalline diamond layer of the composite polycrystal-diamond after described process comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate.
(3) carry out electron-microscope scanning to the composite polycrystal-diamond after process, testing result shows that the residual metal of the composite polycrystal-diamond that embodiment 2 provides removes the degree of depth and can reach 30 μm.
The above-mentioned explanation of the disclosed embodiments, enables professional and technical personnel in the field realize or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. a composite polycrystal-diamond, is characterized in that, comprising:
Cement carbide substrate;
Be compounded in the polycrystalline diamond layer on described cement carbide substrate, described polycrystalline diamond layer comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate; The thickness of described polycrystalline diamond layer is 1.9mm ~ 2.2mm; The thickness removing residual metal layer is 30 μm ~ 50 μm;
Be coated on the topping of cement carbide substrate bottom surface and whole side and polycrystalline diamond layer surface.
2. composite polycrystal-diamond according to claim 1, is characterized in that, described topping is polytetrafluoroethylene floor.
3. composite polycrystal-diamond according to claim 1, is characterized in that, the thickness of described topping is 0.3mm ~ 1mm.
4. composite polycrystal-diamond according to claim 1, is characterized in that, the distance that described topping lateral edge exceeds cement carbide substrate and polycrystalline diamond layer contact plane is 1mm ~ 1.5mm.
5. a processing method for composite polycrystal-diamond, is characterized in that, comprises the following steps:
A) pending composite polycrystal-diamond is carried out successively surface clean, blasting treatment and EFI plating, obtain the composite polycrystal-diamond being with matcoveredn; Described topping is coated on cement carbide substrate bottom surface and whole side and polycrystalline diamond layer surface;
B) composite polycrystal-diamond of the band matcoveredn obtained is carried out acid dip process, obtain the composite polycrystal-diamond after processing; The polycrystalline diamond layer of the composite polycrystal-diamond after described process comprises and removes residual metal layer and do not remove residual metal layer, and the described residual metal layer that do not remove is removing between residual metal layer and cement carbide substrate.
6. preparation method according to claim 5, is characterized in that, described step b) be specially:
The composite polycrystal-diamond of the band matcoveredn obtained is immersed in acid solution, under the condition stirred, carries out high-temperature high-voltage reaction, obtain the composite polycrystal-diamond after processing.
7. preparation method according to claim 6, is characterized in that, the temperature of described high-temperature high-voltage reaction is 50 DEG C ~ 160 DEG C, and pressure is 5MPa ~ 10MPa, and the time is 1h ~ 48h.
8. preparation method according to claim 6, is characterized in that, described acid is one or more in hydrochloric acid, nitric acid and hydrofluoric acid.
9. preparation method according to claim 6, is characterized in that, the speed of described stirring is 100r/min ~ 180r/min.
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