CN104577706A - Efficient quantum cascade laser structure capable of realizing lateral heat conduction and preparation method thereof - Google Patents
Efficient quantum cascade laser structure capable of realizing lateral heat conduction and preparation method thereof Download PDFInfo
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- CN104577706A CN104577706A CN201410821162.1A CN201410821162A CN104577706A CN 104577706 A CN104577706 A CN 104577706A CN 201410821162 A CN201410821162 A CN 201410821162A CN 104577706 A CN104577706 A CN 104577706A
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Abstract
The invention discloses an efficient quantum cascade laser structure capable of realizing lateral heat conduction and a preparation method thereof. The laser adopts a stepped waveguide structure, that is, an active region part which produces heat severely during working of the laser is etched into a stepped platform, the heat exchange area of a heat producing region is increased, the temperature of the active region can be effectively reduced, the defect of poor current limitation caused by a traditional wet etching double-channel ridge waveguide can be overcome, the current leakage is reduced, and the electrical-to-optical conversion efficiency of the laser is improved. With the adoption of the structure, the output power and the working stability of the laser can be improved, the service life of the laser can be prolonged, the pressure of temperature control equipment can be reduced, and the structure is applicable to manufacturing of high-power quantum cascade laser single tubes and arrays.
Description
Technical field
The invention belongs to Semiconductor Optic Electronics technical field, relate generally to quantum cascade laser structure of a kind of efficient side direction heat conduction and preparation method thereof.
Background technology
Bell Laboratory in 1994 achieves the sharp of quantum cascade laser and penetrates, with conventional semiconductor laser unlike, quantum cascade laser relies on electronics at the monopole type device of energy subband transition luminescence, the excitation wavelength of this laser does not rely on the energy gap of material, can when not changing material system, carry out suitable " cutting " to obtain different excitation wavelengths to being with, the design for laser has the very large degree of freedom.
Because the heat production of quantum cascade laser active area is very high, even if at present conventional wet etching double channel ridge waveguide comparatively dry etching double channel ridge waveguide in device heat radiation, make optimization, but cause waveguide the limitation capability of Injection Current declined; In addition, wet etching double channel ridge waveguide quantum cascade laser, it swashs the TM Mode for Laser of penetrating and is coupled out surface plasmons at electric insulation layer and electrode metal interface, increases the waveguide loss of laser, threshold current density is increased, and there is (reference: Xue Huang without this phenomenon in dry etching double channel ridge waveguide device, et al, Optics Express, Vol.20, Issue 3, pp.2539-2547 (2012)).Therefore, in actual applications, for guaranteed discharge qc laser is at each field high-performance steady operation, all to carry out temperature-control refrigeration to laser, wherein be no lack of the temperature controlling instruments of bulky as water cooling unit, mobile inconvenience.
Summary of the invention
In order to solve problems of the prior art, the invention provides a kind of preparation method of quantum cascade laser structure of efficient side direction heat conduction, compared with traditional wet-etching technology, the method better can limit Injection Current, makes laser have good thermal diffusivity simultaneously.
The technical scheme that technical solution problem of the present invention adopts is as follows:
A quantum cascade laser structure for efficient side direction heat conduction, this structure comprises from bottom to top: ducting layer, N-type top covering, N-type cap rock and epitaxial surface electrode in substrate surface electrode, N-type substrate, N-type under-clad layer, N-type lower waveguide layer, active area, N-type; Active area is ridge structure, and both sides are hierarchic structure; In N-type, the width of ducting layer, N-type top covering and N-type cap rock is equal with the ridge upper surface of active area; The outer surface growth electric insulation layer of ducting layer, N-type top covering and N-type cap rock in N-type substrate, N-type under-clad layer, N-type lower waveguide layer, active area, N-type; Electric insulation layer upper surface opens an electrical pumping window; At the outer surface growing epitaxial electrode of electric insulation layer.
A preparation method for the quantum cascade laser structure of efficient side direction heat conduction, the method comprises the steps:
Step one: grow ducting layer, N-type top covering and N-type cap rock in N-type under-clad layer, N-type lower waveguide layer, active area, N-type in N-type successively;
Step 2: etch double channel ridge waveguide structure, etching depth is at least to N-type substrate;
Step 3: make notch cuttype waveguiding structure in active area;
Step 4: at N-type cap rock, double channel and notch cuttype waveguiding structure superficial growth electric insulation layer;
Step 5: open an electrical pumping window in the centre of electric insulation layer upper surface;
Step 6: at electric insulation layer superficial growth epitaxial surface electrode;
Step 7: by N-type substrate thinning back side, polishing, growth substrates face electrode, and carry out annealed alloy;
Step 8: chip cleavage, cavity surface film coating, packaging and testing.
The invention has the beneficial effects as follows: the quantum cascade laser structure of a kind of efficient side direction heat conduction of the present invention, its active area side direction area is larger, makes the effect promoting of active area side direction auxiliary heat dissipation; Active area current limit capability is stronger, can reduce Injection Current and leak, be improved laser electro-optical efficiency, and reduces the effect of active area heat generation.Preparation method of the present invention and semiconductor technology compatibility, mature preparation process, reproducible, be applicable to the quantum cascade laser of various material system and each wave band.
Accompanying drawing explanation
The structural representation of the quantum cascade laser structure of a kind of efficient side direction heat conduction of Fig. 1 the present invention.
Preparation method's flow chart of the quantum cascade laser structure of a kind of efficient side direction heat conduction of Fig. 2 the present invention.
Fig. 3 is that the present invention and conventional wet etch the temperature of double channel ridge waveguide quantum cascade laser structure when continuous wave work stable state and heat flux distribution simulation drawing.
Fig. 4 is that the present invention and conventional wet etch the electric current distribution simulation drawing of double channel ridge waveguide quantum cascade laser structure when continuous wave work stable state.
Embodiment
Be material system below with InGaAs/InAlAs/InP, silicon nitride is insulating barrier quantum cascade laser is example, the present invention is further described with embodiment by reference to the accompanying drawings.
As shown in Figure 1, the quantum cascade laser structure of a kind of efficient side direction heat conduction of the present invention is followed successively by from bottom to up: ducting layer 6, N-type InP top covering 7, N-type InP cap rock 8, Si on Au/Ge/Ni substrate surface electrode 1, N-type InP substrate 2, N-type InP under-clad layer 3, N-type InGaAs lower waveguide layer 4, N-type InGaAs/InAlAs active area 5, N-type InGaAs
3n
4electric insulation layer 10 and Ti/Pt/Au epitaxial surface electrode 11.Wherein the ladder quantity of notch cuttype waveguiding structure 9 is more than or equal to single order, and in the present embodiment, ladder quantity is three rank.Hierarchic structure height and width are 300nm-500nm.The ridge mesa width of active area 5 is 10 μm-20 μm.On N-type InGaAs, the width of ducting layer 6, N-type InP top covering 7, N-type InP cap rock 8 is equal with the ridge table top of active area 5; The outer surface growth Si of ducting layer 6, N-type InP top covering 7 and N-type InP cap rock 8 on N-type InP substrate 2, N-type InP under-clad layer 3, N-type InGaAs lower waveguide layer 4, N-type InGaAs/InAlAs active area 5, N-type InGaAs
3n
4electric insulation layer 10; Si
3n
4electric insulation layer 10 upper surface opens an electrical pumping window; At Si
3n
4the outer surface growth Ti/Pt/Au epitaxial surface electrode 11 of electric insulation layer 10.
Be illustrated in figure 2 preparation technology's flow chart of the quantum cascade laser of a kind of efficient side direction heat conduction of the present invention.The preparation method of this structure provided by the present invention is as follows:
Step one: in N-type InP substrate 2, adopt molecular beam epitaxy (MBE) or MOCVD (MOCVD) technology to grow ducting layer 6, N-type InP top covering 7 and N-type InP cap rock 8 on waveguide N-type layer 4 under N-type InP under-clad layer 3, InGaAs, N-type InGaAs/InAlAs active area 5, N-type InGaAs successively, gained is epitaxial wafer used;
Step 2: adopt photoetching and dry etch process, etch double channel from N-type InP cap rock 8 down to N-type InP substrate 2, form ridge waveguide structure, wherein channel width is 20 μm-40 μm, and ridged mesa width is 10 μm-20 μm;
Step 3: adopt electron beam exposure and dry etch process, the strip structure that width is 300nm-500nm is produced outside gained double channel ridge waveguide in step 2, and be etched to InGaAs lower waveguide layer 4, multiple this step multiple several times, and gradually reduce the etching depth of 300nm-500nm strip structure, reduce on InGaAs till ducting layer 6 until etching depth, to form notch cuttype waveguiding structure 9, ladder is fixed tentatively by we is in this example three rank;
Step 4: at N-type InP cap rock 8, double channel and notch cuttype waveguiding structure 9 superficial growth Si
3n
4electric insulation layer 10;
Step 5: the technique using photoetching and etching, at ridge portion centers, the Si on N-type InP cap rock 8 surface
3n
4open an electrical pumping window in electric insulation layer 10, its width is slightly less than ridge partial width;
Step 6: the method adopting magnetron sputtering, at Si
3n
4electric insulation layer 10 superficial growth Ti/Pt/Au epitaxial surface electrode 11;
Step 7: by N-type InP substrate 2 thinning back side, polishing, adopts the method for magnetron sputtering growth Au/Ge/Ni substrate surface electrode 1 and carries out annealed alloy;
Step 8: chip cleavage, cavity surface film coating, packaging and testing.
Be illustrated in figure 3 temperature when continuous wave work stable state of the quantum cascade laser structure of a kind of efficient side direction heat conduction of the present invention and conventional wet etching double channel ridge table top waveguide quantum cascade laser and heat flux distribution simulation drawing.Can find out in figure, laser of the present invention is when continuous wave work stable state, and the inner maximum temperature in active area is 328K, and significantly pass device (335K) prepared by wet-etching technology lower than use, transverse temperature distribution in active area is also more even; Further, the heat flux distribution density of ridge mesa sides also obviously increases.
Be illustrated in figure 4 quantum cascade laser structure and the electric current distribution simulation drawing of conventional wet etching double channel ridge table top waveguide quantum cascade laser when continuous wave work stable state of a kind of efficient side direction heat conduction of the present invention.Can find out in figure, laser of the present invention is when continuous wave work stable state, ridge mesa edge current density is starkly lower than and uses device prepared by conventional wet etching technics, reduces current leakage, Injection Current is better utilized in ridge table top inner space.
To sum up, quantum cascade laser structure of a kind of efficient side direction heat conduction that the present invention proposes and preparation method thereof, take into account ridge sidewall auxiliary active area heat radiation in conventional wet etching double channel ridge waveguide structure, the advantage of the current limit inner very strong with ridge in conventional dry etching double channel ridge waveguide structure, notch cuttype double channel ridge mesa structure is made to reduce current leakage while being more conducive to heat radiation, improve the electro-optical efficiency of laser, decrease caloric value, make laser operationally more stable.
Claims (6)
1. the quantum cascade laser structure of an efficient side direction heat conduction, it is characterized in that, this structure comprises from bottom to top: ducting layer, N-type top covering, N-type cap rock and epitaxial surface electrode in substrate surface electrode, N-type substrate, N-type under-clad layer, N-type lower waveguide layer, active area, N-type; Active area is ridge structure, and both sides are hierarchic structure; In N-type, the width of ducting layer, N-type top covering and N-type cap rock is equal with the ridge upper surface of active area; The outer surface growth electric insulation layer of ducting layer, N-type top covering and N-type cap rock in N-type substrate, N-type under-clad layer, N-type lower waveguide layer, active area, N-type; Electric insulation layer upper surface opens an electrical pumping window; At the outer surface growing epitaxial electrode of electric insulation layer.
2. the quantum cascade laser structure of a kind of efficient side direction heat conduction as claimed in claim 1, it is characterized in that, the forge piece of step type structure of described active area, ladder quantity is more than or equal to single order.
3. the quantum cascade laser structure of a kind of efficient side direction heat conduction as claimed in claim 1, is characterized in that, the ridge mesa width of described active area is 10 μm-20 μm.
4. the quantum cascade laser structure of a kind of efficient side direction heat conduction as claimed in claim 1, it is characterized in that, the hierarchic structure height of described active area and width are 300nm-500nm.
5. the preparation method of the quantum cascade laser structure of a kind of efficient side direction heat conduction as claimed in claim 1, it is characterized in that, the method comprises the steps:
Step one: grow ducting layer, N-type top covering and N-type cap rock in N-type under-clad layer, N-type lower waveguide layer, active area, N-type in N-type substrate successively;
Step 2: etch double channel ridge waveguide structure, etching depth is at least to N-type substrate;
Step 3: make notch cuttype waveguiding structure in active area;
Step 4: at N-type cap rock, double channel and notch cuttype waveguiding structure superficial growth electric insulation layer;
Step 5: open an electrical pumping window in the centre of electric insulation layer upper surface;
Step 6: at electric insulation layer superficial growth epitaxial surface electrode;
Step 7: by N-type substrate thinning back side, polishing, growth substrates face electrode, and carry out annealed alloy;
Step 8: chip cleavage, cavity surface film coating, packaging and testing.
6. the preparation method of the quantum cascade laser structure of a kind of efficient side direction heat conduction as claimed in claim 5, is characterized in that, etching channel width in step 2 is 20 μm-40 μm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106451074A (en) * | 2016-10-31 | 2017-02-22 | 中国科学院半导体研究所 | Waveguide-optimization buried heterojunction quantum cascade laser |
| CN111288850A (en) * | 2018-12-06 | 2020-06-16 | 中国科学院长春光学精密机械与物理研究所 | Space photoelectric countermeasure method and equipment based on near space platform |
| CN113507040A (en) * | 2021-07-02 | 2021-10-15 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser and preparation method thereof |
| CN115332940A (en) * | 2022-10-11 | 2022-11-11 | 苏州长光华芯光电技术股份有限公司 | Lateral optical mode adjusting high-power semiconductor device and preparation method thereof |
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| JP2000124553A (en) * | 1998-10-16 | 2000-04-28 | Fujitsu Ltd | Semiconductor laser device and manufacture thereof |
| US20020027935A1 (en) * | 2000-09-04 | 2002-03-07 | Fujitsu Quantum Devices Limited | Laser diode and fabrication process thereof |
| JP2011055009A (en) * | 2010-12-13 | 2011-03-17 | Meijo Univ | Semiconductor laser |
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- 2014-12-25 CN CN201410821162.1A patent/CN104577706B/en active Active
Patent Citations (3)
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| JP2000124553A (en) * | 1998-10-16 | 2000-04-28 | Fujitsu Ltd | Semiconductor laser device and manufacture thereof |
| US20020027935A1 (en) * | 2000-09-04 | 2002-03-07 | Fujitsu Quantum Devices Limited | Laser diode and fabrication process thereof |
| JP2011055009A (en) * | 2010-12-13 | 2011-03-17 | Meijo Univ | Semiconductor laser |
Non-Patent Citations (1)
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| XUE HUANG ETAL.: "Ridge-width dependence of the threshold of long wavelength quantum cascade lasers with sloped and vertical sidewalls", 《OPTICS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106451074A (en) * | 2016-10-31 | 2017-02-22 | 中国科学院半导体研究所 | Waveguide-optimization buried heterojunction quantum cascade laser |
| CN106451074B (en) * | 2016-10-31 | 2019-05-17 | 中国科学院半导体研究所 | A kind of buried heterostructure quantum cascade laser of waveguide optimization |
| CN111288850A (en) * | 2018-12-06 | 2020-06-16 | 中国科学院长春光学精密机械与物理研究所 | Space photoelectric countermeasure method and equipment based on near space platform |
| CN113507040A (en) * | 2021-07-02 | 2021-10-15 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser and preparation method thereof |
| CN115332940A (en) * | 2022-10-11 | 2022-11-11 | 苏州长光华芯光电技术股份有限公司 | Lateral optical mode adjusting high-power semiconductor device and preparation method thereof |
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Effective date of registration: 20220616 Address after: 130102 first floor, building 2, incubation base, No. 19, Yingkou Road, Changchun Economic Development Zone, Jilin Province Patentee after: Jiguang Semiconductor Technology Co.,Ltd. Address before: 130033, 3888 southeast Lake Road, Jilin, Changchun Patentee before: CHANGCHUN INSTITUTE OF OPTICS, FINE MECHANICS AND PHYSICS, CHINESE ACADEMY OF SCIENCE |