CN104576969A - Manufacturing method of flexible photoelectric device - Google Patents
Manufacturing method of flexible photoelectric device Download PDFInfo
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- CN104576969A CN104576969A CN201310472546.2A CN201310472546A CN104576969A CN 104576969 A CN104576969 A CN 104576969A CN 201310472546 A CN201310472546 A CN 201310472546A CN 104576969 A CN104576969 A CN 104576969A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention provides a manufacturing method of a flexible photoelectric device. The manufacturing method comprises the following steps: arranging a flexible polymer substrate on the surface, on which coarse areas are manufactured, of a glass carrier plate; performing high-temperature and high-pressure treatment in a chamber, so as to enable polymer molecules and -OH on the surface of glass gradually to form hydrogen bonds gradually and further enable the flexible polymer substrate to be adhered to the surface of the glass carrier plate, wherein a low coarse area enhances adhesion of the flexible polymer substrate to the glass carrier plate; adhesion of a high coarse area and the flexible polymer substrate to the glass carrier plate is small, so that after a cutting process of the device, the flexible polymer substrate and the photoelectric device borne by the flexible polymer substrate in the high coarse area can be easily stripped from the glass carrier plate. In the fixing process of the flexible polymer substrate, a bonding agent is not used and a sacrificial layer is not arranged, so that processing steps are simpler; the surface of the substrate is high in smoothness, so that the follow-up manufacturing process of the photoelectric device is facilitated.
Description
Technical field
The present invention relates to flexible electronic device field, be specifically related to a kind of preparation method of flexible photoelectric device.
Background technology
(English full name is Organic Light-Emitting Diodes to organic electroluminescent LED, referred to as OLED), (English full name is Organic Photovoltaic to organic solar batteries, referred to as OPV), (English full name is Organic Thin Film Transistor to organic film FET, referred to as OTFT), (English full name is Organic Semiconductor Lasers to organic light pumped laser, referred to as OSL) etc. the place of photoelectric device most glamour can realize flexibility exactly, electric device specifically will be had to be produced in flexible polymer substrate, as polyethylene (PE), polypropylene (PP), polystyrene (PS), poly-alum ether (PES), polyethylene naphthalate (PEN), polyimides (PI), PETG (PET) etc., these polymeric substrates can make photoelectric device bend, and can arbitrary shape be rolled into.
Because there is the features such as hardness is low, thermal coefficient of expansion is high, resistance to elevated temperatures is poor in polymeric substrates, when be heated or stressed easily occur curling or peel off the phenomenon of separation, serious defect can be caused in the preparation process of device; Therefore, can not being simply transplanted on polymer flexibility substrate with the preparation method of the rigid materials such as the glass photoelectric device that is substrate simply by routine.General by first polymeric substrates being fixed on the rigid substrate in prior art, as glass substrate, with the preparation of the transmission of completing substrate and each segment process, again flexible base, board is peeled off from rigid substrates together with device after device package, finally form flexible photoelectric device.
Chinese patent CN102651331A discloses a kind of preparation method of flexible electronic device, be specially: first adopt photoetching process to prepare substrate tray, namely on rigid substrates (as glass substrate), etch multiple groove, form groove area, the periphery of groove area is plane marginal zone; Flexible base, board is placed on the top of substrate tray, the substrate tray of subsidiary flexible base, board is put into chamber and vacuumizes process, and just deposit fixed bed on flexible substrates by chemical vapour deposition (CVD) or physical vapour deposition (PVD), fixed bed is conductive layer or insulating barrier, the outward flange covering of fixed bed extends to beyond the external boundary of flexible base, board, is fixed on substrate tray thus by flexible base, board; Carry out the processing technology of electronic device on flexible substrates; By being coated with photoresist on fixed bed, carrying out precuring, exposure, development, developing regional is etched, etch away the fixed bed on this region, the photoresist lift off in other regions on flexible base, board and substrate tray is fallen, vacuum between flexible base, board and substrate tray is released, and flexible base, board is separated with substrate tray.And conventionally in prior art arrange sacrifice layer between rigid substrates and flexible base, board, sacrifice layer is removed to reach compared with technology that flexible base, board and rigid substrates peel off by device again after prepare, above-mentioned preparation method's technique is simpler.But above-mentioned preparation method repeatedly adopts photoetching technique, also there is the problem that process costs is high, and in the process peeled off at device and rigid substrates, easily occur the problems such as colloid pollution; Bearing substrate is provided with groove, the evenness on flexible base, board surface will be destroyed under vacuum conditions, have influence on the performance of subsequent device preparation process and device.
Summary of the invention
For this reason, in prior art to be solved by this invention flexible photoelectric device preparation technology in process costs high, the problem that substrate surface evenness is low, provides the preparation method of the flexible photoelectric device that technique is simple, substrate surface evenness is high.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
The preparation method of a kind of flexible photoelectric device of the present invention, comprises the steps:
S1, in glass support plate, prepare some high rough region and some low rough region around described high rough region, each high rough region and form a device around the low rough region of described high rough region and prepare unit area;
S2, to prepare on unit area at described device directly flexible polymer substrate is set, then be placed in chamber and carry out high temperature, HIGH PRESSURE TREATMENT;
Preparation and the encapsulation of photoelectric device are carried out in S3, described flexible polymer substrate surface corresponding to described high rough region;
S4, described photoelectric device carried with it for flexible polymer substrate described in described high rough region to be cut, and the described photoelectric device that described flexible polymer substrate is carried with it is peeled off from described glass support plate.
Also comprise the steps: after step S4
S5, to prepare at described device in the described flexible polymer substrate that retains in unit area and prepare mask layer, and by mask layer, ashing process is carried out to described flexible polymer substrate, flexible polymer substrate forms through channel;
The described glass support plate that S6, the part obtained by step S5 retain described flexible polymer substrate is placed in containing H
2carry out heat treated in the chamber of O gas, more described flexible polymer substrate will be remained peel off from described glass support plate.
The roughness of low rough region described in step S1 is R
a<0.1, the roughness of described high rough region is 0.3<R
a<0.5.
In high temperature described in step S2, step of high pressure, temperature is 200 ~ 250 DEG C, and pressure is 0.3 ~ 0.5MPa.
The processing time of high temperature described in step S2, step of high pressure is 30 ~ 90 minutes.
Mask layer described in step S5 is the metal shielding layer being provided with micropore.
The thickness of described metal shielding layer is 0.1 ~ 0.5mm, and the aperture of described micropore is 40 ~ 100 μm.
The heating-up temperature of heating steps described in step S6 is 180 ~ 220 DEG C.
The processing time of heating steps described in step S6 is 20 ~ 60 minutes.
Flexible polymer substrate described in step S2 is directly placed or is arranged in described glass support plate by the method for rotary coating, chemical vapour deposition (CVD), vacuum evaporation.
Preferably described flexible polymer substrate is directly placed in described glass support plate in step S2.
Also comprise before high temperature described in step S2, step of high pressure and vacuumize process, vacuum degree is 10
-4~ 10
-2pa.
High rough region described in step S1 and described low rough region are prepared by acid system etching technics.
Before the preparation process of photoelectric device described in step S3, also to be included in described flexible polymer substrate preparation and to comprise the water oxygen barrier layer that at least 2 layers of blocker unit layer and at least 1 layer of planarization elementary layer be arranged alternately, described blocker unit layer comprises the some blocker unit in array distribution, described planarization elementary layer comprises the some planarization unit in array distribution, and described planarization unit to be arranged in the gap of adjacent described blocker unit and to extend in described blocker unit.
The material of described blocker unit is identical or different, is selected from one or more the combination in aluminium oxide, silica, silicon nitride, titanium oxide, zirconia, aluminum oxynitride, silicon oxynitride, amorphous carbon.
The material of described planarization unit is selected from one or more the combination in polyacrylate, Parylene, polyureas, PETG, PEN, polystyrene.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, the invention provides a kind of preparation method of flexible photoelectric device, wherein, in glass support plate, device is prepared on unit area and is arranged flexible polymer substrate, then is placed in chamber and carries out high temperature, HIGH PRESSURE TREATMENT; Under high temperature, condition of high voltage, in flexible polymer substrate, polymer molecule energy strengthens, and movement velocity is accelerated, and shakes off the constraint of hydrogen bond between polymer molecule gradually, hydrogen bond is disconnected; And the surface of glass support plate has a large amount of-Si-OH, according to strangling Saudi Arabia's row principle, under high temperature, high pressure, polymer molecule gradually with glass surface-OH forms hydrogen bond, makes flexible polymer substrate fit in glass support plate surface.Prepare the high rough region that unit area is prepared for the preparation of device and the low rough region adhered to for flexible base, board at described device, described low rough region is around described high rough region; Low rough region surface-OH quantity is relatively many, and the tack of flexible polymer substrate and glass support plate is better.And be arranged to high rough region for region prepared by device, the glass support plate in this region and the contact area of flexible polymer substrate are reduced, thus reduce the quantity of hydrogen bond between this regional flexibility polymeric substrates and glass support plate, when not affecting prepared by photoelectric device the tack reducing flexible polymer substrate as far as possible, can be stripped out from glass support plate by the photoelectric device that the flexible polymer substrate in this region is carried with it easily after the cutting process of device, preparation technology is simple.
2, the invention provides a kind of preparation method of flexible photoelectric device, in the fixation procedure of flexible polymer substrate, do not use adhesive, also do not arrange sacrifice layer, processing step is simpler; Do not adopt photoetching process when substrate cuts, need not carry out the steps such as the removing of photoresist, step simply also there will not be the problems such as colloid pollution, and process costs is low; And substrate surface evenness is high, the roughness R of described high rough region
abe only 0.3 ~ 0.5, be conducive to the preparation process of subsequent optical electric device.
3, the invention provides a kind of preparation method of flexible photoelectric device, wherein, prepare in flexible polymer substrate that unit area retains at described device and prepare mask layer, and by mask layer, ashing process is carried out to described flexible polymer substrate, flexible polymer substrate forms through channel; Be placed in again containing H
2carry out heat treated in the chamber of O gas, with this understanding, the polymer molecule at described through channel edge easily and H
2o molecule form hydrogen bond and replace gradually and glass support plate surface-OH between hydrogen bond, making to remain described flexible polymer substrate can peel off from described glass support plate easily, and glass support plate can reuse, and technique is simple, easy to implement.
4, the invention provides a kind of preparation method of flexible photoelectric device, flexible polymer substrate also arranges the water oxygen barrier layer comprising at least 2 layers of blocker unit layer and at least 1 layer of planarization elementary layer and be arranged alternately, described blocker unit and described planarization unit are all arranged in the cycle, described planarization unit to be arranged in the gap of adjacent described blocker unit and to extend in described blocker unit, can ensure that adjacent barrier elementary layer can cover the gap position between component units mutually like this, the lateral penetration of effective block water oxygen, the effective guarantee performance and used life of device.And described flexible polymer substrate can cut by arbitrary dimension in the range scale being greater than described planarization unit, simplifies the processing step of flexible photoelectric device, reduces production cost.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is glass support plate subregion schematic diagram in the present invention;
Fig. 2 A is high rough region microcosmic schematic diagram described in glass support plate of the present invention;
Fig. 2 B is the sectional view after high rough region described in glass support plate of the present invention and described flexible polymer substrate are fitted;
Fig. 3 A is low rough region microcosmic schematic diagram described in glass support plate of the present invention;
Fig. 3 B is the sectional view after low rough region described in glass support plate of the present invention and described flexible polymer substrate are fitted;
Fig. 4 is the sectional view of photoelectric device described in embodiment 1;
Fig. 5 A is the schematic diagram of described glass substrate after described photoelectric device that flexible polymer substrate described in the present invention is carried with it is peeled off from described high rough region;
Fig. 5 B is the sectional view along A-A ' line in Fig. 5 A;
Fig. 6 is the schematic cross-section arranging mask layer in the present invention after photoelectric device is peeled off in residual described flexible polymer substrate;
Fig. 7 carries out the schematic cross-section after cineration technics to described flexible polymer substrate in the present invention;
Fig. 8 is the mechanism figure that described in the present invention, flexible polymer substrate described in low rough region is peeled off.
In figure, Reference numeral is expressed as: 1-glass support plate, 11-high rough region, the low rough region of 12-, 2-flexible polymer substrate, 3-resilient coating, 41-gate insulator, 42-semiconductor channel layer, 43-interlayer dielectric layer, 44-grid, 45-source electrode, 46-drain electrode, 5-planarization layer, 6-anode, 7-organic function layer, 8-negative electrode, 9-encapsulated layer, 10-mask layer, 13-through channel.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.But the present invention can realize and be not limited to embodiment described here in a number of different manners.On the contrary, following provided embodiment, to one skilled in the art, makes the present invention fully open and covers scope of the present invention completely.In accompanying drawing, for the sake of clarity, size and the relative size in each layer or region is exaggerated.
Unless otherwise defined, at these all terms adopted (comprising technology and scientific and technical terminology), there is usual the understood equivalent with those skilled in the art.
Embodiment 1
The present embodiment provides a kind of preparation method of flexible photoelectric device, specifically comprises the steps:
S1, as shown in Figure 1, divide 4 devices in glass support plate 1 and prepare unit area, described device is prepared unit area and is formed by the high rough region 11 prepared for device with for the low rough region 12 that flexible base, board adheres to, and described low rough region 12 is around described high rough region.
Described high rough region 11 and described low rough region 12 are prepared by acid system etching technics, and the roughness of described rough region is R
a<0.1, the present embodiment is preferably 0.05, and the thickness of described low rough region is 0.1 μm; The roughness of described high rough region is 0.3<R
a<0.5, the present embodiment is preferably 0.4, and the thickness of described high rough region is 0.5 μm.As other embodiments of the present invention, coarse process can also be carried out by other glass etch techniques such as alkaline process etchings to described high rough region 11 and described low rough region 12, all can realize object of the present invention, belong to protection scope of the present invention.
S2, to prepare on unit area at described device flexible polymer substrate 2 is directly set, then be placed in chamber and carry out high temperature, HIGH PRESSURE TREATMENT, described flexible polymer substrate 2 can directly be placed or pass through rotary coating, chemical vapour deposition (CVD), the polymer film forming methods such as vacuum evaporation are arranged in described glass support plate 1, the preferred described flexible polymer substrate 2 of the present embodiment can directly be placed in described glass support plate 1, described flexible polymer substrate 2 is selected from but is not limited to polyethylene (PE), polypropylene (PP), polystyrene (PS), poly-alum ether (PES), polyethylene naphthalate (PEN), polyimides (PI), PETG (PET) etc., the preferred PI substrate of the present embodiment.First the described glass support plate 1 being coated with described flexible polymer substrate 2 is placed in chamber and vacuumizes process, vacuum degree is 0.001Pa, described flexible polymer substrate 2 is fitted tightly with described glass support plate 1, and then carry out high temperature, HIGH PRESSURE TREATMENT, chamber indoor temperature is 220 DEG C, pressure is 0.4MPa, and the processing time is 60 minutes.
As other embodiments of the present invention, described chamber indoor temperature is 200 ~ 250 DEG C, and pressure is 0.3 ~ 0.5MPa, and the processing time is all can realize object of the present invention in 30 ~ 90 minutes, belongs to protection scope of the present invention.
As other embodiments of the present invention, to the described glass support plate 1 being coated with described flexible polymer substrate 2 be placed in chamber vacuumize process time, vacuum degree is 10
-4~ 10
-2pa, all can realize object of the present invention, belong to protection scope of the present invention.
Prepare on unit area at described device and flexible polymer substrate 2 is directly set, then be placed in chamber and carry out high temperature, HIGH PRESSURE TREATMENT; Under high temperature, condition of high voltage, in flexible polymer substrate 2, polymer molecule energy strengthens, and movement velocity is accelerated, and shakes off the constraint of hydrogen bond between polymer molecule gradually, hydrogen bond is disconnected; And the surface of described glass support plate 1 has a large amount of-Si-OH, according to strangling Saudi Arabia's row principle, under high temperature, condition of high voltage, polymer molecule gradually with glass surface-OH forms hydrogen bond, flexible polymer substrate 2 fitted tightly and glass support plate 1 surface.
As shown in Fig. 3 A and Fig. 3 B, to be prepared in unit area at described device by acid system etching technics and make described low rough region 12, described low rough region 12 surface-OH quantity is relatively many, and flexible polymer substrate 2 is larger at the adhesive force of described glass support plate 1.As shown in Fig. 2 A and Fig. 2 B, due to the tip contact effect of described high rough region 11, contact area between this regional flexibility polymeric substrates 2 and glass support plate 1 is reduced, thus reduce the quantity of hydrogen bond between this regional flexibility polymeric substrates 2 and glass support plate 1, reduce the adhesive force of flexible polymer substrate 2 in described glass support plate 1 when not affecting prepared by photoelectric device as far as possible, after the cutting process of device, along with the infiltration cutting edge air, easily photoelectric device carried with it for the described flexible polymer substrate 2 in this region can be stripped out from glass support plate 1.
In the fixation procedure of flexible polymer substrate 2, do not use adhesive, also do not arrange sacrifice layer, processing step is more simple, and also there will not be the problems such as colloid pollution, process costs is low; And the roughness of described low rough region 12 is less than 0.1, and surface roughness is low, and plane is more smooth, the roughness (R of described high rough region 11
a) be 0.4, thickness is only 0.5 μm, makes described flexible polymer substrate 2 surface smoothness high, is conducive to the preparation process of subsequent optical electric device.
S3, carry out preparation and the encapsulation of photoelectric device in the described high rough region 11 on described flexible polymer substrate 2 surface; In the present embodiment, photoelectric device is active OLED; as other embodiments of the present invention; described photoelectric device can also be OPV, OTFT, OSL, LCD(liquid crystal display), LED(light-emitting diode), PDP(plasma display system), LEC(luminescent electrochemical cell) etc.; all can realize object of the present invention, belong to protection scope of the present invention.
The structural representation of active OLED described in the present embodiment as shown in Figure 4, structure and the same prior art of preparation technology, comprise the resilient coating 3 be successively set on flexible base, board 2, TFT(thin film field-effect pipe) in semiconductor channel layer 42, gate insulator 41, grid 44, be arranged on the interlayer dielectric layer 43 on grid 44, be arranged on the source electrode 45 on interlayer dielectric layer 43 and drain electrode 46; TFT is arranged planarization layer 5, for the planarization of device architecture, be convenient to the preparation of Organic Light Emitting Diode, described Organic Light Emitting Diode has and comprises anode 6, organic function layer 7, negative electrode 8; Wherein organic function layer 7 comprises organic luminous layer, and one or more the combination in the structure such as hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer.Treat that can arrange flexible package layer 9 above described active OLED after Organic Light Emitting Diode makes encapsulates.
As other embodiments of the present invention, before the preparation process of photoelectric device described in step S3, also to be included in described flexible polymer substrate 2 preparation and to comprise the water oxygen barrier layer that at least 2 layers of blocker unit layer and at least 1 layer of planarization elementary layer be arranged alternately, described blocker unit layer comprises the some blocker unit in array distribution, described planarization elementary layer comprises the some planarization unit in array distribution, and described planarization unit to be arranged in the gap of adjacent described blocker unit and to extend in described blocker unit.Can ensure that adjacent barrier elementary layer can cover the gap position between component units mutually like this, the lateral penetration of effective block water oxygen, the effective guarantee performance and used life of photoelectric device.And described flexible polymer substrate 2 can cut by arbitrary dimension in the range scale being greater than described planarization unit, simplifies the processing step of flexible photoelectric device, reduces production cost.
Wherein, the material of described blocker unit is identical or different, is selected from one or more the combination in aluminium oxide, silica, silicon nitride, titanium oxide, zirconia, aluminum oxynitride, silicon oxynitride, amorphous carbon.
Wherein, the material of described planarization unit is selected from one or more the combination in polyacrylate, Parylene, polyureas, PETG, PEN, polystyrene.
S4, described photoelectric device carried with it for the described flexible polymer substrate 1 in described high rough region 11 to be cut, and described photoelectric device carried with it for described flexible polymer substrate is peeled off from described glass support plate 1.Due to described in described high rough region 11 between flexible polymer substrate 2 and described glass support plate 1 quantity of hydrogen bond few, the adhesive force of described flexible polymer substrate 2 in described glass support plate 1 is little, after the cutting process of device, due to the infiltration of incision air, can easily photoelectric device carried with it for the described flexible polymer substrate 2 in this region be stripped out from glass support plate 1.
Also comprise after step S4:
Carried the with it photoelectric device of S5, described flexible polymer substrate 2 is from after glass support plate 1 is peeled off, and the structural representation of described glass support plate 1 as shown in Figure 5 A and 5B; The described flexible polymer substrate 2 that described glass support plate 1 retains prepares mask layer 10, and described mask layer 10 is the metal mask layer with micropore that Ni base alloy is made, and the thickness of metal mask layer is 0.2mm, and aperture is 50 μm, as shown in Figure 6; And by mask layer 10, ashing process is carried out to described flexible polymer substrate 2, described flexible polymer substrate 2 forms through channel 13, as shown in Figure 7.
As by the convertible embodiment of inventing, described mask layer 10 can be the metal mask layer with micropore, and thickness is 0.1 ~ 0.5mm, and aperture is 40 ~ 100 μm, all can realize object of the present invention, belong to protection scope of the present invention.
S6, as shown in Figure 8, the described glass support plate 1 that the part obtained by step S5 retains described flexible polymer substrate 2 is placed in containing H
2carry out heat treated in the chamber of O gas, temperature is 200 DEG C, and the processing time is 30 minutes, H in chamber
2the bulk density of O gas is 10 ~ 30g/L, is preferably 20g/L.With this understanding, the polymer molecule at described through channel 13 edge easily and H
2o molecule formed hydrogen bond and replace gradually and described glass support plate surface-OH between hydrogen bond, make can easily by residue described flexible polymer substrate 2 peel off from described glass support plate 1, described glass support plate 1 can reuse, and effectively reduces process costs; And technique is simple, easy to implement.
As other embodiments of the present invention, the temperature in chamber described in step S6 is 180 ~ 220 DEG C, and the processing time is 20 ~ 60 minutes, all can realize object of the present invention, belong to protection scope of the present invention.
Embodiment 2
The present embodiment provides a kind of preparation method of flexible photoelectric device, concrete steps with embodiment 1, uniquely unlike, in high temperature described in step S2, step of high pressure, temperature is 200 DEG C, and pressure is 0.3MPa, and described high temperature, step of high pressure processing time are 30 minutes; The temperature of heating steps described in step S6 is 180 DEG C, and heating time is 20 minutes.
Embodiment 3
The present embodiment provides a kind of preparation method of flexible photoelectric device, concrete steps with embodiment 1, uniquely unlike, in high temperature described in step S2, step of high pressure, temperature is 250 DEG C, and pressure is 0.5MPa, and described high temperature, step of high pressure processing time are 90 minutes; The temperature of heating steps described in step S6 is 220 DEG C, and heating time is 60 minutes.
Use hundred lattice methods of testing, described device obtained in step 2 in above-described embodiment is prepared the flexible polymer substrate 2 posted in unit area and carries out adhesive force test at different temperatures.Method of testing is: flexible polymer substrate 2 and glass support plate 1 are fitted by method of the present invention, cross-cut tester is used to produce on flexible base, board surface the lattice that hem width is 3mm, then use tape adhesion flexible base, board surface and press, afterwards adhesive tape is opened, flexible base, board square dropping situations with reference to glass support plate surface judges the adhesiveness between flexible base, board and glass support plate, and adhesiveness index is with reference to ASTM D3359 standard.Test result is as shown in the table:
As can be seen from upper table data, the preparation method of a kind of flexible photoelectric device provided by the invention, described low rough region adhesion is larger, in the instance where such an adhesive is not utilized, flexible polymer substrate can be made firmly to fit in glass support plate, can not produce curling at different temperature or peel off the phenomenon of separation, being applicable to the carrying out of subsequent device preparation technology; And described high rough region adhesion is less, after prepared by described flexible photoelectric device, through cutting step, can be easy to peel off from described glass support plate, technique is simple, easy to operate.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (16)
1. a preparation method for flexible photoelectric device, is characterized in that, comprises the steps:
S1, in glass support plate, prepare some high rough region and some low rough region around described high rough region, each high rough region and form a device around the low rough region of described high rough region and prepare unit area;
S2, to prepare on unit area at described device directly flexible polymer substrate is set, then be placed in chamber and carry out high temperature, HIGH PRESSURE TREATMENT;
Preparation and the encapsulation of photoelectric device are carried out in S3, described flexible polymer substrate surface corresponding to described high rough region;
S4, described photoelectric device carried with it for flexible polymer substrate described in described high rough region to be cut, and the described photoelectric device that described flexible polymer substrate is carried with it is peeled off from described glass support plate.
2. the preparation method of a kind of flexible photoelectric device according to claim 1, is characterized in that, also comprise the steps: after step S4
S5, to prepare at described device in the described flexible polymer substrate that retains in unit area and prepare mask layer, and by mask layer, ashing process is carried out to described flexible polymer substrate, flexible polymer substrate forms through channel;
The described glass support plate that S6, the part obtained by step S5 retain described flexible polymer substrate is placed in containing H
2carry out heat treated in the chamber of O gas, more described flexible polymer substrate will be remained peel off from described glass support plate.
3. the preparation method of a kind of flexible photoelectric device according to claim 1 and 2, is characterized in that, the roughness of low rough region described in step S1 is R
a<0.1, the roughness of described high rough region is 0.3<R
a<0.5.
4. the preparation method of a kind of flexible photoelectric device according to claim 1 and 2, is characterized in that, in high temperature described in step S2, step of high pressure, temperature is 200 ~ 250 DEG C, and pressure is 0.3 ~ 0.5MPa.
5. the preparation method of a kind of flexible photoelectric device according to claim 4, is characterized in that, the processing time of high temperature described in step S2, step of high pressure is 30 ~ 90 minutes.
6. the preparation method of a kind of flexible photoelectric device according to claim 2, is characterized in that, mask layer described in step S5 is the metal shielding layer being provided with micropore.
7. the preparation method of a kind of flexible photoelectric device according to claim 6, is characterized in that, the thickness of described metal shielding layer is 0.1 ~ 0.5mm, and the aperture of described micropore is 40 ~ 100 μm.
8. the preparation method of a kind of flexible photoelectric device according to claim 2, is characterized in that, the heating-up temperature of heating steps described in step S6 is 180 ~ 220 DEG C.
9. the preparation method of a kind of flexible photoelectric device according to claim 2, is characterized in that, the processing time of heating steps described in step S6 is 20 ~ 60 minutes.
10. the preparation method of a kind of flexible photoelectric device according to claim 1 and 2, it is characterized in that, flexible polymer substrate described in step S2 is directly placed or is arranged in described glass support plate by the method for rotary coating, chemical vapour deposition (CVD), vacuum evaporation.
The preparation method of 11. a kind of flexible photoelectric devices according to claim 1 and 2, it is characterized in that, flexible polymer substrate described in step S2 is directly placed in described glass support plate.
The preparation method of 12. a kind of flexible photoelectric devices according to claim 1 and 2, is characterized in that, also comprises and vacuumize process before high temperature described in step S2, step of high pressure, and vacuum degree is 10
-4~ 10
-2pa.
The preparation method of 13. a kind of flexible photoelectric devices according to claim 1 and 2, is characterized in that, high rough region described in step S1 and described low rough region are prepared by acid system etching technics.
The preparation method of 14. a kind of flexible photoelectric devices according to claim 1 and 2, it is characterized in that, before the preparation process of photoelectric device described in step S3, also to be included in described flexible polymer substrate preparation and to comprise the water oxygen barrier layer that at least 2 layers of blocker unit layer and at least 1 layer of planarization elementary layer be arranged alternately, described blocker unit layer comprises the some blocker unit in array distribution, described planarization elementary layer comprises the some planarization unit in array distribution, described planarization unit to be arranged in the gap of adjacent described blocker unit and to extend in described blocker unit.
The preparation method of 15. a kind of flexible photoelectric devices according to claim 14, it is characterized in that, the material of described blocker unit is identical or different, is selected from one or more the combination in aluminium oxide, silica, silicon nitride, titanium oxide, zirconia, aluminum oxynitride, silicon oxynitride, amorphous carbon.
The preparation method of 16. a kind of flexible photoelectric devices according to claim 15, it is characterized in that, the material of described planarization unit is selected from one or more the combination in polyacrylate, Parylene, polyureas, PETG, PEN, polystyrene.
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