CN104576926B - Resistance-type memory and its manufacturing method - Google Patents
Resistance-type memory and its manufacturing method Download PDFInfo
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- CN104576926B CN104576926B CN201310512266.XA CN201310512266A CN104576926B CN 104576926 B CN104576926 B CN 104576926B CN 201310512266 A CN201310512266 A CN 201310512266A CN 104576926 B CN104576926 B CN 104576926B
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Abstract
The present invention provides a kind of resistance-type memory and its manufacturing method, which includes: to provide a substrate；A dielectric layer is formed on substrate；A stop-layer is formed on dielectric layer；An opening is formed across stop-layer and dielectric layer；A hearth electrode is formed among opening, wherein hearth electrode and stop-layer are coplanar；A dielectric layer is deposited on hearth electrode and stop-layer；A top electrode material is deposited on dielectric layer；And top electrode material and dielectric layer are patterned, with the inter-electrode dielectric layer for defining a top electrode and under it, wherein top electrode has a second surface opposite with a first surface of hearth electrode, and the area of second surface is greater than the area of first surface.Operation electric current-voltage characteristic variation of resistive random access memory can be effectively solved the problems, such as through the invention.
Description
Technical field
The present invention relates to a kind of resistance-type memory (resistive random-access memory, RRAM) and its systems
Make method.
Background technique
Non-volatility memorizer has the advantages that the data of deposit will not disappear after a loss of power, therefore is that many electric appliances produce
Product maintain memory element essential to normal operating.Currently, resistive random access memory (resistive random
Access memory, RRAM) it is a kind of non-volatility memorizer that industry actively develops, it is low with write operation voltage, write
Enter the advantages that time of erasing is short, storage time is long, non-destructive is read, multimode stores, structure is simple and required area is small,
The great application potential on the following PC and electronic equipment.
However, still there are many challenges urgently to overcome before mass production RRAM.One of challenge is the operation of RRAM
The variation of current-voltage (I-V) characteristic, the variation are multiple possible conductive filaments between top electrode and hearth electrode
(filament) path is formed.Biggish electrode can generate more possible conductive filament and form path, will increase RRAM behaviour
The variation of the I-V characteristic of work.In order to be minimized these variations, the most direct practice is exactly to reduce electrode.
On the other hand, the hearth electrode material of traditional RRAM in formed when, often naturally (inherently) in its surface shape
At the structure of column crystal, so that the uniformity is bad when dielectric layer deposition between subsequent electrode, the life that conductive filament forms path is influenced
At the variation of the I-V characteristic of increase RRAM operation
Summary of the invention
The technical problem to be solved by the present invention is a kind of resistance-type memory and its manufacturing method are provided, to solve resistance
Operation electric current-voltage characteristic variation problem of formula random access memory.
The scheme that the present invention solves the above problems includes: to provide a kind of manufacturing method of resistance-type memory, comprising: is provided
One substrate；A dielectric layer is formed on substrate；A stop-layer is formed on dielectric layer；An opening is formed across stop-layer and is situated between
Electric layer；A hearth electrode is formed among opening, wherein hearth electrode and stop-layer are coplanar (coplanar)；Deposit a dielectric layer in
On hearth electrode and stop-layer；A top electrode material is deposited on dielectric layer；And top electrode material and dielectric layer are patterned, with
A top electrode and the inter-electrode dielectric layer under it are defined, wherein top electrode has the one the of a second surface and hearth electrode
One surface is opposite, and the area of second surface is greater than the area of first surface.
The embodiment of the present invention provides a kind of resistance-type memory, comprising: a substrate；One dielectric layer, on substrate；One stops
Only layer, on dielectric layer；One opening, passes through stop-layer and dielectric layer；One hearth electrode, among opening, and it is total with stop-layer
Plane；One inter-electrode dielectric layer, on hearth electrode and extend to part stop-layer on；And a top electrode, in electrode
Between on dielectric layer, wherein top electrode has a second surface opposite with a first surface of hearth electrode, and the face of second surface
Product is greater than the area of first surface.
Operation electric current-voltage characteristic variation of resistive random access memory can be greatly lowered through the invention.
Detailed description of the invention
Figure 1A~Fig. 1 H is the diagrammatic cross-section for showing the intermediate stage of manufacture RRAM100 according to embodiments of the present invention.
Fig. 2A~Fig. 2 E is that the section in the intermediate stage that another embodiment shows manufacture RRAM200 according to the present invention is illustrated
Figure.
Main element label declaration
100,200~RRAM, 102~substrate
112a, 250~hearth electrode 116a~top electrode
104,104a~106~dielectric layer of conductive layer
108~stop-layer 110~opening
112,230,230a, 240,240a~hearth electrode 114~dielectric layer of material
114a~116~top electrode material of inter-electrode dielectric layer
106a, 118~filamentray structure 116S~lower surface
112S~220~lining of upper surface
Specific embodiment
Different characteristic under this invention enumerates several different embodiments below.In the present invention specific element and arrange be
To put it more simply, but the present invention be not limited with these embodiments.For example, in the description for forming first element in second element
May include the embodiment that first element is directly contacted with second element, also include have additional element be formed in first element with
Between second element, make first element and second element embodiment not in direct contact.In addition, for simplicity, this hair
It is bright to be indicated in different examples with duplicate component symbol and/or letter, but do not represent and have between each embodiment and/or structure
There is specific relationship.
Figure 1A~Fig. 1 H illustrates for the section of the manufacturing method of RRAM100 depicted in first embodiment according to the present invention
Figure.Figure 1A is please referred to, forms a conductive material 104 in a substrate 102.Substrate 102 can be silicon base, SiGe substrate, carbon
SiClx substrate, silicon-on-insulator (silicon-on insulator, SOI) substrate, multilayer (multi-layered) substrate, ladder
Spend (gradient) substrate or blend together orientation (hybrid orientation) substrate etc..In one embodiment, substrate 102 is
One Silicon Wafer (wafer).Conductive material 104 is, for example, tungsten, copper, aluminium, silver, gold or other suitable conductive materials (for example, mixing
Miscellaneous polysilicon (doped polysilicon)).Then, Figure 1B is please referred to, patterning conductive material 104 is to form conductive layer
104a.It in embodiments of the present invention, can be by carrying out a lithographic (lithography) and dry etching process (e.g. reaction equation
Ion(ic) etching (reactive ion etching, RIE)) conductive material 104 is patterned.
Then, Fig. 1 C is please referred to, forms the stop-layer above dielectric layer 106 and dielectric layer 106 above substrate 102
108.Dielectric layer 106 may include silica, silicon nitride, silicon oxynitride, advanced low-k materials (low-kdielectrics) or
Other suitable dielectric materials.In some embodiments, stop-layer 108 is nitrogenous material, for example, silicon nitride, silicon oxynitride.
The forming method of dielectric layer 106 and stop-layer 108 be, for example, chemical vapour deposition technique (chemical vapor deposition,
CVD), method of spin coating (spin on coating).
Fig. 1 D is please referred to, after forming dielectric layer 106 and stop-layer 108, one is formed and runs through dielectric layer 106 and stop-layer
108 opening 110.Opening 110 exposes the conductive layer 104a of part.The method for forming opening 110 may include dry etching process,
Such as RIE.It is worth noting that, carrying out to before subsequent step, the optionally shape on the side wall of opening 110 and bottom
At a lining (liner) (not shown).
Then, Fig. 1 E is please referred to, forms a hearth electrode material 112 in opening 110 and on stop-layer.Hearth electrode material
112 be, for example, titanium, titanium nitride, platinum, tungsten, aluminium, other suitable electrode materials.The method for forming hearth electrode material is, for example, physics
Vapour deposition process (PVD), atomic layer deposition (atomic layer deposition, ALD), Metalorganic Chemical Vapor depositing
(metal organic CVD, MOCVD) or other suitable depositing operations.
Then, Fig. 1 F is please referred to, removes part hearth electrode material 112 to form hearth electrode 112a in opening 110.It removes
The method of part hearth electrode material 112 is, for example, that it is flat to carry out one to hearth electrode material using stop-layer 108 as polish stop layer
Chemical industry skill (such as chemical mechanical milling method (CMP)), puts down the upper surface 112S of hearth electrode 112a and the top surface of stop-layer 108 altogether
Face (coplanar).Wherein, which can also remove lining (if present) simultaneously.It is different from traditional RRAM, this hair
It is bright that by forming ground end electrode material 112 in opening 108, and using stop-layer 108 as polish stop layer, progress one is planarized
Technique, can effectively in forming flat upper surface 112S on hearth electrode 112a, and then promoted between subsequent electrode dielectric layer with
The uniformity of top electrode avoids the problem that the columnar crystal structure that traditional RRAM is formed in hearth electrode surface, and RRAM behaviour is greatly decreased
The variation of the I-V characteristic of work.
Fig. 1 G is please referred to, after forming hearth electrode 112a, in sequentially shape on the surface of stop-layer 108 and hearth electrode 112a
At a dielectric layer 114 and a top electrode material 116.Dielectric layer 114 may include that silica, silicon nitride, silicon oxynitride, high dielectric are normal
Number material (high-k dielectrics) or other suitable dielectric materials.Wherein, high dielectric constant material may include metal
Oxide, for example, Li, Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm,
Yb, Lu, etc. metals oxide.In one embodiment, dielectric layer 114 is, for example, hafnium oxide (HfO2).Top electrode material 116
It may include titanium, titanium nitride, platinum, tungsten, aluminium or other suitable electrode materials.
Then, Fig. 1 H, pattern dielectric layer 114 and top electrode material 116 are please referred to, to define inter-electrode dielectric respectively
Layer 114a and top electrode 116a completes the production of RRAM100.Wherein, inter-electrode dielectric layer 114a and the part top electrode 116a
It extends on the stop-layer 108 of 110 two sides of opening.Pattern dielectric layer 114 and the method for top electrode material 116 can for example pass through
Carry out a lithographic and dry etching process (such as RIE).In embodiments of the present invention, top electrode 116a has a lower surface 116S,
Lower surface 116S is opposite with the upper surface 112S of hearth electrode 112a, and the area of the lower surface 116S of top electrode 116a is greater than bottom electricity
The area of the upper surface 112S of pole 112a.The present invention can effectively reduce filamentray structure by forming above-mentioned asymmetrical mim structure
118 in the forming region of the upper surface 112S of hearth electrode 112a, and then the variation of the I-V characteristic of RRAM operation is greatly reduced.
In addition to the above embodiments, RRAM of the invention can be further according to the selection of the material of inter-electrode dielectric layer 114a
Ground uses the hearth electrode of composite construction.Collocation Fig. 2A~Fig. 2 E is described further the RRAM200 of another embodiment of the present invention below,
For simplicity, the same or similar element in RRAM100 is made marks with identical label, and identical processing step will not
It repeats again.
A referring to figure 2., be the step of being connected at Fig. 1 D after schematic diagram.In one embodiment, opening is being formed
After 110, optionally (optionally) opening 110 in a lining 220 is conformally formed on stop-layer 108,
Effect is reduction stress.Lining 220 can be a conductive material, for example, titanium, titanium nitride or combination above-mentioned.Lining 220 with lead
Electric layer 104a is in electrical contact.Then, in opening 110 in above stop-layer 108 formed one first hearth electrode material 230.First
Hearth electrode material 230 may include tungsten, copper, aluminium or other suitable electrode materials.In one embodiment, the first hearth electrode material
230 be, for example, tungsten.The forming method of first hearth electrode material 230 may include PVD, ALD, MOCVD or other suitable deposition works
Skill.
Then, B referring to figure 2., the first hearth electrode material 230 being located in removal stop layer 108 with part in opening 110
To form the first hearth electrode 230a.The method for removing the first hearth electrode material 230 may include dry etching process, such as RIE technique.
In Fig. 2 B the step of, stop-layer 108 is as etching stopping layer, and this step removes the part lining other than opening 110 simultaneously
220 (if present) of layer.
Then, as shown in Figure 2 C, the second hearth electrode material 240 is formed on the first hearth electrode 230a and stop-layer 108.
Second hearth electrode material 240 may include titanium, platinum, titanium nitride or other suitable electrode materials.In one embodiment, the second bottom
Electrode material 240 is, for example, for titanium nitride.
Then, D referring to figure 2. removes the second hearth electrode of part material 240 to form the second hearth electrode in opening 110
240a completes the hearth electrode 250 of the composite construction of the present embodiment.As shown in Figure 2 D, hearth electrode 250 includes the first hearth electrode 230a
With the second hearth electrode material 240a.The method for removing the second hearth electrode of part material 240 is, for example, using stop-layer 108 as grinding
Stop-layer carries out a flatening process (such as chemical mechanical milling method (CMP)) to the second hearth electrode material 240, makes hearth electrode
The top surface of 250 upper surface 250S and stop-layer 108 are coplanar (coplanar).
Finally, as shown in Figure 2 E, in formation inter-electrode dielectric layer 114a and top electrode on stop-layer 108 and hearth electrode 250
116a completes the structure of the RRAM200 of the present embodiment.Inter-electrode dielectric layer 114a and the forming method of top electrode 116a are identical to
Fig. 1 G~Fig. 1 H and its relevant paragraph, therefore details are not described herein.The top electrode 116a of RRAM200 has a lower surface 116S, under
Surface 116S is opposite with the upper surface 250S of hearth electrode 250, and the area of the lower surface 116S of top electrode 116a is greater than hearth electrode
The area of 250 upper surface 250S.It is worth noting that, the present embodiment can effectively be dropped by forming the hearth electrode of composite material
The resistance of low RRAM promotes the operation efficiency of RRAM.
The present invention is by hearth electrode material being formed in opening, and is ground using stop-layer in the technique of manufacture RRAM
Hearth electrode material is ground to remove the column crystal of hearth electrode material self-assembling formation.In this way, which the bottom with flat surfaces can be formed
Electrode, and then the uniformity of subsequent deposited inter-electrode dielectric layer is promoted, the change of the I-V characteristic of RRAM operation is greatly decreased
It is different.In addition to this, the present invention is also by forming asymmetric mim structure (i.e. upper table of the lower surface of top electrode greater than hearth electrode
Face), filamentray structure can be effectively reduced in the forming region of the upper surface of hearth electrode, and then the I-V that RRAM operation is greatly reduced is special
The variation of property.
Although presently preferred embodiments of the present invention explanation is as above, however, it is not to limit the invention, any to be familiar with this skill
Person, without departing from the spirit and scope of the present invention, when can make some changes and embellishment, therefore protection scope of the present invention is worked as
Subject to claim institute defender.
Claims (8)
1. a kind of manufacturing method of resistance-type memory, which is characterized in that the manufacturing method includes:
One substrate is provided；
A dielectric layer is formed on the substrate；
A stop-layer is formed on the dielectric layer；
An opening is formed across the stop-layer and the dielectric layer；
A lining is formed on the bottom and side wall of the opening；
A hearth electrode is formed on the lining among the opening, wherein the hearth electrode and the stop-layer are coplanar, the hearth electrode
Including one first hearth electrode material and one second hearth electrode material, and the step of wherein forming the hearth electrode includes:
The first hearth electrode material is deposited to fill up in the opening and cover the stop-layer；
The hearth electrode material is recessed, is filled in the first hearth electrode material part in the opening；
It deposits the rest part that the second hearth electrode material fills up in the opening and covers the stop-layer；And
The second hearth electrode material is ground, using the stop-layer as polish stop layer to remove second bottom electricity other than the opening
Pole material；
A dielectric layer is deposited on the hearth electrode and the stop-layer；
A top electrode material is deposited on the dielectric layer；And
Pattern the top electrode material and the dielectric layer, with define a top electrode and an inter-electrode dielectric layer under it wherein
The top electrode have a second surface it is opposite with a first surface of the hearth electrode, and the area of the second surface greater than this first
The area on surface.
2. the manufacturing method of resistance-type memory according to claim 1, which is characterized in that the first hearth electrode material packet
Tungsten, copper, aluminium or aforementioned combinatorial are included, and the second hearth electrode material includes titanium nitride, titanium, platinum or aforementioned combinatorial.
3. the manufacturing method of resistance-type memory according to claim 1, which is characterized in that the stop-layer includes nitridation
Silicon, silicon oxynitride or aforementioned combinatorial.
4. the manufacturing method of resistance-type memory according to claim 1, which is characterized in that in the step for forming the dielectric layer
Before rapid, the manufacturing method further include:
A conductive layer is formed on the substrate；And
The conductive layer is patterned, wherein the conductive layer is exposed in form the opening the step of.
5. a kind of resistance-type memory, which is characterized in that the resistance-type memory includes:
One substrate；
One dielectric layer is located on the substrate；
One stop-layer is located on the dielectric layer；
One opening, passes through the stop-layer and the dielectric layer；
One lining is inside lining on the side wall and bottom of the opening；
One hearth electrode is located among the opening, and coplanar with the stop-layer, and wherein the hearth electrode is to fill in being somebody's turn to do in the opening
On lining, which includes that part fills in one first hearth electrode material among the opening and is located at the first hearth electrode material
One second hearth electrode material on material grinds the second hearth electrode material using the stop-layer as polish stop layer, make this
The top surface and the stop-layer of two hearth electrode materials are coplanar；
One inter-electrode dielectric layer on the hearth electrode and extends on the stop-layer of part；And
One top electrode is located on the inter-electrode dielectric layer, and wherein the top electrode has a second surface and the one of the hearth electrode
First surface is opposite, and the area of the second surface is greater than the area of the first surface.
6. resistance-type memory according to claim 5, which is characterized in that the first hearth electrode material include tungsten, copper,
Aluminium or aforementioned combinatorial, and the second hearth electrode material includes titanium nitride, titanium, platinum or combination above-mentioned.
7. resistance-type memory according to claim 5, which is characterized in that the stop-layer include silicon nitride, silicon oxynitride,
Or aforementioned combinatorial.
8. resistance-type memory according to claim 5, which is characterized in that the resistance-type memory further include:
One conductive layer is located under the dielectric layer, and wherein the opening exposes the conductive layer of a part.
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| CN107665945A (en) * | 2016-07-28 | 2018-02-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of resistive random access memory and its manufacture method |
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| CN101577307A (en) * | 2008-05-05 | 2009-11-11 | 中芯国际集成电路制造(北京)有限公司 | Storage unit of resistance storage and manufacture method thereof |
| CN102270738A (en) * | 2010-06-03 | 2011-12-07 | 北京大学 | Manufacturing method of memory unit comprising resistor |
| CN102891253A (en) * | 2012-09-25 | 2013-01-23 | 北京大学 | Resistance random access memory and manufacturing method thereof |
| CN103094471A (en) * | 2011-10-28 | 2013-05-08 | 中国科学院物理研究所 | Nonvolatile storing device capable of reducing storage node and manufacturing method thereof |
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| TWI394231B (en) * | 2009-02-03 | 2013-04-21 | Nanya Technology Corp | Non-volatile memory cell and fabrication method thereof |
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|---|---|---|---|---|
| CN101165911A (en) * | 2006-10-18 | 2008-04-23 | 三星电子株式会社 | Phase change memory devices and methods of manufacturing the same |
| CN101577307A (en) * | 2008-05-05 | 2009-11-11 | 中芯国际集成电路制造(北京)有限公司 | Storage unit of resistance storage and manufacture method thereof |
| CN102270738A (en) * | 2010-06-03 | 2011-12-07 | 北京大学 | Manufacturing method of memory unit comprising resistor |
| CN103094471A (en) * | 2011-10-28 | 2013-05-08 | 中国科学院物理研究所 | Nonvolatile storing device capable of reducing storage node and manufacturing method thereof |
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