CN104576803B - Solaode based on GaN nano wire three dimensional structure and preparation method thereof - Google Patents
Solaode based on GaN nano wire three dimensional structure and preparation method thereof Download PDFInfo
- Publication number
- CN104576803B CN104576803B CN201510030070.6A CN201510030070A CN104576803B CN 104576803 B CN104576803 B CN 104576803B CN 201510030070 A CN201510030070 A CN 201510030070A CN 104576803 B CN104576803 B CN 104576803B
- Authority
- CN
- China
- Prior art keywords
- nano wire
- gan nano
- silicon substrate
- layer
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 85
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 75
- 239000010703 silicon Substances 0.000 claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 32
- 229920005591 polysilicon Polymers 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000001312 dry etching Methods 0.000 claims abstract description 10
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 22
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910021529 ammonia Inorganic materials 0.000 claims description 11
- 230000001476 alcoholic effect Effects 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 8
- 239000000725 suspension Substances 0.000 claims description 8
- 229910004014 SiF4 Inorganic materials 0.000 claims description 6
- 239000007792 gaseous phase Substances 0.000 claims description 6
- 238000007654 immersion Methods 0.000 claims description 6
- 238000000992 sputter etching Methods 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000005587 bubbling Effects 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 239000010431 corundum Substances 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 150000003376 silicon Chemical class 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- 229910015844 BCl3 Inorganic materials 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 235000012149 noodles Nutrition 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 11
- 230000002708 enhancing effect Effects 0.000 claims 2
- 241000628997 Flos Species 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 14
- 210000004027 cell Anatomy 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 230000003252 repetitive effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 231100001240 inorganic pollutant Toxicity 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of solaode based on GaN nano wire three dimensional structure and preparation method thereof.It includes N-type silicon substrate (6) and backplate (7)；Upper surface in N-type silicon substrate (6) forms trapezoidal shape by dry etching；Pass sequentially through on this is trapezoidal transfer form GaN nano wire matte layer (5), by formation of deposits intrinsically polysilicon layer (4) and p-type polysilicon layer (3), form ITO indium tin oxide transparent conducting film (2) by sputtering, finally give three-dimensional inverted trapezoidal overall structure；This structure top end uses electron beam evaporation to form front electrode (1).Every a diameter of 50 100nm of GaN nano wire in described GaN nano wire matte layer, a length of 10 20 μm, this layer has strong sunken light characteristic, it is possible to reduce the luminous reflectance of surface of silicon.The present invention improves device to the absorption of photon and utilization, improves the conversion efficiency of solaode, can be used for photovoltaic generation.
Description
Technical field
The present invention relates to the technical field of solaode, particularly relate to based on GaN nano wire three dimensional structure too
Sun energy battery, can be used for photovoltaic generation.
Background technology
Owing to solar energy is abundant and cleaning, for energy related application widely, photovoltaic device very attractive.So
And, the most silica-based and other solaodes electricity conversion is low, makes the relatively costly of solaode, hinders
Its development and application.The optoelectronic transformation efficiency of solaode is defined as electricity output and the solaode of solaode
The ratio of the solar energy that region, surface is incident.In the making of actual solaode, several factors is had to limit device
Performance, thus the impact of these factors is must take at the aspect such as selection of the design of solaode and material.
In order to improve the optoelectronic transformation efficiency of solaode, need to use and fall into light technology.When light is through these structures,
Light beam can scatter, and scattered light enters the absorbed layer of hull cell with bigger angle of incidence, due to absorbed layer material
Coefficient of refraction is generally high than the refractive index of surrounding material, and the light beam of large-angle scatter is prone to be totally reflected in absorbed layer.
Total reflection light beam vibrates in absorbed layer back and forth, until the generation photo-generated carrier that is absorbed by the absorption layer.So by sunken light
Technology, the light that can be effectively improved thin-film solar cells absorbs, thus improves cell conversion efficiency.
The light trapping structure of existing solar cell surface generally uses three-dimensional inverted trapezoidal structure, and section is as shown in Figure 2.
Its structure be respectively as follows: from top to bottom front electrode 1, ITO indium tin oxide transparent conducting film 2, p-type polysilicon layer 3,
Intrinsically polysilicon layer 4, N-type silicon substrate 5, backplate 6.Substrate surface passes through wet etching, is formed and has three-dimensional
The surface of inverted trapezoidal repetitive, then plasma chemical vapor deposition PECVD intrinsically polysilicon layer and P thereon
Type polysilicon layer, forms the energy transfer mechanism with three-dimensional inverted trapezoidal light trapping structure.When light incidence battery surface light
Light effective exercise length in battery surface light trapping structure and order of reflection can be increased in its surface continuous reflection, from
And the absorption efficiency that energization shifter is to light.But this structure is owing to matte size is uneven and is distributed relatively
Extensively so that substrate surface defect concentration is greatly increased, it is difficult to obtain high-quality matte at front surface and falls into light, be difficult to fall
The low substrate reflection coefficient to light.
Summary of the invention
Present invention aims to the deficiencies in the prior art, give a kind of based on GaN nano wire three dimensional structure
Solaode, reduce the luminous reflectance of surface of silicon, to improve solaode to the absorption of photon and utilization.
For achieving the above object, the solaode based on GaN nano wire three dimensional structure that the present invention proposes, including N
Type silicon substrate 6 and backplate 7, wherein the upper surface of N-type silicon substrate 6 uses reverse trapezoid shape, in this inverted trapezoidal
It is sequentially laminated with intrinsically polysilicon layer 4, p-type polysilicon layer 3 and ITO indium tin oxide transparent conducting film 2, is formed
Three-dimensional inverted trapezoidal overall structure, this integrally-built top of three-dimensional inverted trapezoidal is provided with front electrode 1, it is characterised in that:
GaN nano wire matte layer 5 is had additional between intrinsically polysilicon layer 4 and N-type silicon substrate 6.
As preferably, described GaN nano wire matte layer 5 is made up of, often the GaN nano wire of the stacking that intersects
A diameter of 50-100nm of root GaN nano wire, a length of 10-20 μm.
As preferably, the thickness of described N-type silicon substrate 6 is 200-400 μm.
As preferably, described front electrode 1 uses metallic Silver material.
As preferably, described p-type polysilicon layer 3 and the thickness of intrinsically polysilicon layer 4 are 10-15nm.
As preferably, described backplate 7 uses metallic aluminum material.
For achieving the above object, the preparation method of the present invention comprises the steps:
1) N-type silicon substrate is carried out；
2) use dry etching, form reverse trapezoid shape in surface of silicon；
3) the N-type silicon substrate upper surface forming reverse trapezoid shape on surface makes GaN nano wire matte layer；
3a) take another block silicon substrate a, and deposit the W metal of 5-10nm thereon；
3b) the silicon substrate a being deposited with W metal is put in the reaction chamber of CVD equipment, is warming up to 850-920 DEG C,
Be placed in and fill above the corundum boat of the metal Ga that 0.5g purity is 99.999%, then be passed through flow-rate ratio be 4:1 hydrogen and
The mixed gas of ammonia, reacts 10-30 minute, grows one layer of GaN nano wire on this silicon substrate a；
3c) the silicon substrate a growing GaN nano wire is placed in alcoholic solution ultrasonic vibration 20-30 minute, makes GaN
Nano wire departs from silicon substrate a and is dissolved in alcoholic solution, forms GaN nano wire suspension；
3d) with dropper, GaN nano wire solution is transferred to the N-type silicon substrate upper surface with reverse trapezoid shape,
Form GaN nano wire layer；
3e) the most transferred N-type silicon substrate having GaN nano wire layer is placed in concentrated nitric acid immersion 5-10 minute, then
Transfer them in the ammonia of volume ratio 3:1 and the mixed liquor of Tetramethylammonium hydroxide TMAH solution, and be passed through pure
The high purity oxygen gas of degree 99.999%, GaN nano wire layer is carried out by bubbling for 30 minutes；
3f) use the GaN nano wire layer that coupled ion etching ICP technique micro etch is cleaned, form GaN nanometer
Line matte layer, its etching gas is SF6Or CF4, etch period is 2-5 minute.
4) on the nano wire matte layer have reverse trapezoid shape, using plasma strengthens chemical gaseous phase deposition PECVD
Deposition thickness is the intrinsically polysilicon layer of 10-15nm；
5) in the intrinsically polysilicon layer have reverse trapezoid shape, using plasma strengthens chemical gaseous phase deposition
PECVD deposition thickness is the p-type polysilicon layer of 15-20nm；
6) use magnetron sputtering deposition ITO tin indium oxide saturating on the p-type polysilicon layer have reverse trapezoid shape
Bright conductive film, as transparent conductive electrode, forms three-dimensional inverted trapezoidal overall structure；
7) use electron beam evaporation process deposition argent on three-dimensional inverted trapezoidal overall structure top and etch formation front
Electrode；
8) use electron beam evaporation process deposition metallic aluminium to form the back side electricity of solaode at the N-type silicon substrate back side
Pole, completes the preparation of solaode based on GaN nano wire three dimensional structure.
The present invention has the GaN nano wire matte layer of high surface and high light trapping characteristic by increase, it is possible to effectively drop
The reflection to light of the low silicon substrate, improves solaode to the absorption of photon and utilization, improves the conversion of solaode
Efficiency.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of the present invention.
Fig. 2 is the existing solar battery structure figure having three-dimensional inverted trapezoidal light trapping structure.
Fig. 3 is the fabrication processing figure of the present invention.
Detailed description of the invention
With reference to Fig. 1, the present invention includes front electrode 1, ITO indium tin oxide transparent conducting film 2, p-type polysilicon layer
3, intrinsically polysilicon layer 4, GaN nano wire matte layer 5, N-type silicon substrate 6, backplate 7.Wherein N-type silicon
The upper surface of substrate 6 uses trapezoidal shape, GaN nano wire matte layer 5, intrinsically polysilicon layer 4, p-type polysilicon
Layer 3 and ITO indium tin oxide transparent conducting film 2 be sequentially laminated on this trapezoidal on, form three-dimensional inverted trapezoidal overall structure,
Front electrode 1 is located at the top of this three-dimensional inverted trapezoidal structure.Described front electrode 1 uses metallic Silver material；Described P
The thickness of type polysilicon layer 3 and intrinsically polysilicon layer 4 is 10-15nm；Described GaN nano wire matte layer 5 is logical
Cross the GaN nano wire layer of the stacking that intersects that solution is transferred to be formed on silicon substrate 6, every GaN nano wire
A diameter of 50-100nm, a length of 10-20 μm, this matte layer has strong sunken light characteristic, it is possible to effective
Reduce the luminous reflectance of surface of silicon；The thickness of described N-type silicon substrate 6 is 200-400nm；Backplate 7 is adopted
Use metallic aluminum material.
Three embodiments of making given below solaode based on GaN nano wire three dimensional structure:
Embodiment 1, makes a diameter of 50nm of every GaN nano wire, the GaN nano wire of a length of 10 μm
Three dimensional structure solaode.
With reference to Fig. 3, the making step of this example is as follows:
Step 1: clean N-type silicon substrate, to remove surface contaminant.
(1.1) use acetone and isopropanol are to N-type silicon substrate alternately ultrasonic waves for cleaning, to remove substrate surface
Organic Pollution；
(1.2) the configuration ammonia of 1:1:3, hydrogen peroxide, the mixed solution of deionized water, and it is heated to 120 DEG C,
N-type silicon substrate is placed in this mixed solution immersion 12 minutes, after taking-up, uses a large amount of deionized water rinsing, to remove
N-type silicon substrate surface inorganic pollutant；
(1.3) N-type silicon substrate HF acid buffer is soaked 2 minutes, remove the oxide layer on surface.
Step 2: form reverse trapezoid shape in N-type silicon substrate upper surface etching.
Using dry etching, forming the degree of depth in surface of silicon is 2 μm three-dimensional inverted trapezoidal repetitives.Dry etching
Technological parameter is: RF power is 100W, chlorine flowrate 20ml/min, BCl3Flow is 8ml/min, Ar flow
For 5ml/min, in reaction chamber, pressure is 10mTorr.
Step 3: make GaN nano wire matte layer at the N-type silicon substrate upper surface forming reverse trapezoid shape.
(3.1) take another block silicon substrate a, and deposit the W metal of 5nm thereon；
(3.2) the silicon substrate a being deposited with W metal is put in the reaction chamber of CVD equipment, be placed in and fill 0.5g
Purity is above the corundum boat of the metal Ga of 99.999%, is warming up to 850 DEG C, then be passed through flow-rate ratio be 4:1 hydrogen and
The mixed gas of ammonia, reacts 10 minutes, grows one layer of GaN nano wire on this silicon substrate a；
(3.3) the silicon substrate a growing GaN nano wire is placed in alcoholic solution ultrasonic vibration 20 minutes, makes GaN
Nano wire departs from silicon substrate a and is dissolved in alcoholic solution, forms GaN nano wire suspension；
(3.4) with dropper, GaN nano wire suspension is transferred to the N-type silicon substrate upper surface with reverse trapezoid shape,
Form GaN nano wire layer；
(3.5) the most transferred N-type silicon substrate having GaN nano wire layer is placed in concentrated nitric acid immersion 5 minutes, then
Transfer them in the ammonia of volume ratio 3:1 and the mixed liquor of Tetramethylammonium hydroxide TMAH solution, and be passed through pure
The high purity oxygen gas of degree 99.999%, GaN nano wire layer is carried out by bubbling for 30 minutes；
(3.6) use the GaN nano wire layer that coupled ion etching ICP technique miniature carving is cleaned, form GaN nanometer
Line matte layer, its etching gas is SF6, etch period is 2 minutes.
Step 4: using plasma strengthens chemical gaseous phase deposition on the nano wire matte layer have reverse trapezoid shape
Pecvd process deposition thickness is the intrinsically polysilicon layer of 10nm, its deposition power 100W, SiF4With H2Gas
Body flow-rate ratio is 50ml/min:10ml/min, SiH4Flow is 0.5ml/min, reative cell pressure 100Pa, substrate temperature
Spend 300 DEG C.
Step 5: using plasma strengthens chemical vapor deposition in the intrinsically polysilicon layer have reverse trapezoid shape
PECVD deposition thickness is the p-type polysilicon layer of 10nm, its deposition power 100W, SiF4With H2Gas stream
Amount ratio is 50ml/min:10ml/min, SiH4Flow is 0.5ml/min, B2H6Flow is 0.5ml/min, reative cell
Pressure 100Pa, substrate temperature 300 DEG C.
Step 6: use magnetron sputtering deposition ITO tin indium oxide saturating on the p-type polysilicon layer have reverse trapezoid shape
Bright conductive film, as transparency electrode, forms three-dimensional inverted trapezoidal overall structure.
Step 7: use electron beam evaporation process deposition argent on three-dimensional inverted trapezoidal overall structure top and etch formation
Front electrode.
Step 8: use electron beam evaporation process deposition metallic aluminium at the N-type silicon substrate back side, form solaode
Backplate, completes the preparation of solaode based on GaN nano wire three dimensional structure.
Embodiment 2, makes a diameter of 80nm of every GaN nano wire, the GaN nano wire three of a length of 15 μm
Dimension structure solaode.
With reference to Fig. 3, the making step of this example is as follows:
Step one: clean N-type silicon substrate, to remove surface contaminant.
This step is identical with the step 1 of embodiment 1.
Step 2: form reverse trapezoid shape in N-type silicon substrate upper surface etching.
Using dry etching, forming the degree of depth in surface of silicon is 3 μm three-dimensional inverted trapezoidal repetitives.Dry etching
Technological parameter is: RF power is 100W, chlorine flowrate 20ml/min, BCl3Flow is 8ml/min, Ar flow
For 5ml/min, in reaction chamber, pressure is 10mTorr.
Step 3: make GaN nano wire matte layer at the N-type silicon substrate upper surface forming reverse trapezoid shape.
(3a) take another block silicon substrate a, and deposit the W metal of 8nm thereon；
(3b) the silicon substrate a being deposited with W metal is put in the reaction chamber of CVD equipment, be placed in and fill 0.5g
Purity is above the corundum boat of the metal Ga of 99.999%, is warming up to 885 DEG C, then be passed through flow-rate ratio be 4:1 hydrogen and
The mixed gas of ammonia, reacts 20 minutes, grows one layer of GaN nano wire on this silicon substrate a；
(3c) the silicon substrate a growing GaN nano wire is placed in alcoholic solution ultrasonic vibration 20 minutes, makes GaN
Nano wire departs from silicon substrate a and is dissolved in alcoholic solution, forms GaN nano wire suspension；
(3d) with dropper, GaN nano wire suspension is transferred to the N-type silicon substrate upper surface with reverse trapezoid shape,
Form GaN nano wire layer；
(3e) the most transferred N-type silicon substrate having GaN nano wire layer is placed in concentrated nitric acid immersion 5 minutes, then
Transfer them in the ammonia of volume ratio 3:1 and the mixed liquor of Tetramethylammonium hydroxide TMAH solution, and be passed through pure
The high purity oxygen gas of degree 99.999%, GaN nano wire layer is carried out by bubbling for 30 minutes；
(3f) use the GaN nano wire layer that coupled ion etching ICP technique micro etch is cleaned, form GaN and receive
Rice noodle matte layer, its etching gas is SF6, etch period is 4 minutes.
Step 4: using plasma strengthens chemical gaseous phase deposition on the nano wire matte layer have reverse trapezoid shape
Pecvd process deposition thickness is the intrinsically polysilicon layer of 13nm, its deposition power 100W, SiF4With H2Gas
Body flow-rate ratio is 50ml/min:10ml/min, SiH4Flow is 0.6ml/min, reative cell pressure 100Pa, substrate temperature
Spend 300 DEG C.
Step 5: using plasma strengthens chemical vapor deposition in the intrinsically polysilicon layer have reverse trapezoid shape
PECVD deposition thickness is the p-type polysilicon layer of 13nm, its deposition power 100W, SiF4With H2Gas stream
Amount ratio is 50ml/min:10ml/min, SiH4Flow is 0.6ml/min, B2H6Flow is 0.5ml/min, reative cell
Pressure 100Pa, substrate temperature 300 DEG C.
Step 6: identical with the step 6 of embodiment 1.
Step 7: identical with the step 7 of embodiment 1.
Step 8: identical with the step 8 of embodiment 1, completes solar-electricity based on GaN nano wire three dimensional structure
The preparation in pond.
Embodiment 3, makes a diameter of 100nm of every GaN nano wire, the GaN nano wire of a length of 20 μm
Three dimensional structure solaode.
With reference to Fig. 3, the making step of this example is as follows:
Step A: clean N-type silicon substrate, to remove surface contaminant.
This step is identical with the step 1 of embodiment 1.
Step B: form reverse trapezoid shape in N-type silicon substrate upper surface etching.
Using dry etching, forming the degree of depth in surface of silicon is 4 μm three-dimensional inverted trapezoidal repetitives.Dry etching
Technological parameter is: RF power is 100W, chlorine flowrate 20ml/min, BCl3Flow is 8ml/min, Ar flow
For 5ml/min, in reaction chamber, pressure is 10mTorr.
Step C: make GaN nano wire matte layer at the N-type silicon substrate upper surface forming reverse trapezoid shape.
(C.1) take another block silicon substrate a, and deposit the W metal of 10nm thereon；
(C.2) the silicon substrate a being deposited with W metal is put in the reaction chamber of CVD equipment, be placed in and fill 0.5g
Purity is above the corundum boat of the metal Ga of 99.999%, is warming up to 920 DEG C, then be passed through flow-rate ratio be 4:1 hydrogen and
The mixed gas of ammonia, reacts 30 minutes, grows one layer of GaN nano wire on this silicon substrate a；
(C.3) the silicon substrate a growing GaN nano wire is placed in alcoholic solution ultrasonic vibration 20 minutes, makes GaN
Nano wire departs from silicon substrate a and is dissolved in alcoholic solution, forms GaN nano wire suspension；
(C.4) with dropper, GaN nano wire suspension is transferred to the N-type silicon substrate upper surface with reverse trapezoid shape,
Form GaN nano wire layer；
(C.5) the most transferred N-type silicon substrate having GaN nano wire layer is placed in concentrated nitric acid immersion 5 minutes, then
Transfer them in the ammonia of volume ratio 3:1 and the mixed liquor of Tetramethylammonium hydroxide TMAH solution, and be passed through pure
The high purity oxygen gas of degree 99.999%, GaN nano wire layer is carried out by bubbling for 30 minutes；
(C.6) use the GaN nano wire layer that coupled ion etching ICP technique micro etch is cleaned, form GaN and receive
Rice noodle matte layer, its etching gas is CF4, etch period is 5 minutes.
Step D: using plasma strengthens chemical gaseous phase deposition on the nano wire matte layer have reverse trapezoid shape
Pecvd process deposition thickness is the intrinsically polysilicon layer of 15nm, its deposition power 100W, SiF4With H2Gas
Body flow-rate ratio is 50ml/min:10ml/min, SiH4Flow is 0.7ml/min, and reative cell pressure is 100Pa, substrate
Temperature is 300 DEG C.
Step E: using plasma strengthens chemical vapor deposition in the intrinsically polysilicon layer have reverse trapezoid shape
PECVD deposition thickness is the p-type polysilicon layer of 15nm, its deposition power 100W, SiF4With H2Gas stream
Amount ratio is 50ml/min:10ml/min, SiH4Flow is 0.7ml/min, B2H6Flow is 0.5ml/min, reative cell
Pressure is 100Pa, and substrate temperature is 300 DEG C.
Step F: identical with the step 6 of embodiment 1.
Step G: identical with the step 7 of embodiment 1.
Step H: identical with the step 8 of embodiment 1, completes solar-electricity based on GaN nano wire three dimensional structure
The preparation in pond.
Claims (5)
1. a preparation method for solaode based on GaN nano wire three dimensional structure, comprises the steps:
1) N-type silicon substrate is carried out；
2) use dry etching, form reverse trapezoid shape in surface of silicon；
3) the N-type silicon substrate upper surface forming reverse trapezoid shape on surface makes GaN nano wire matte layer；
3a) take another block silicon substrate a, and deposit the W metal of 5-10nm thereon；
3b) the silicon substrate a being deposited with W metal is put in the reaction chamber of CVD equipment, be warming up to 850-920 DEG C, put
Above the corundum boat filling the metal Ga that 0.5g purity is 99.999%, then to be passed through flow-rate ratio be 4:1 hydrogen and ammonia
Mixed gas, reacts 10-30 minute, grows one layer of GaN nano wire on this silicon substrate a；
3c) the silicon substrate a growing GaN nano wire is placed in alcoholic solution ultrasonic vibration 20-30 minute, makes GaN receive
Rice noodle departs from silicon substrate a and is dissolved in alcoholic solution, forms GaN nano wire suspension；
3d) with dropper, GaN nano wire solution is transferred to the N-type silicon substrate upper surface with reverse trapezoid shape, is formed
GaN nano wire layer；
3e) the most transferred N-type silicon substrate having GaN nano wire layer is placed in concentrated nitric acid immersion 5-10 minute, then by it
It is transferred in the ammonia of volume ratio 3:1 and the mixed liquor of Tetramethylammonium hydroxide TMAH solution, and is passed through purity 99.999%
High purity oxygen gas, GaN nano wire layer is carried out by bubbling for 30 minutes；
3f) use the GaN nano wire layer that coupled ion etching ICP technique micro etch is cleaned, form GaN nano wire floss
Surface layer；
4) on the nano wire matte layer have reverse trapezoid shape, using plasma enhancing chemical gaseous phase deposit thickness is
The intrinsically polysilicon layer of 10-15nm；
5) in the intrinsically polysilicon layer have reverse trapezoid shape, using plasma enhancing chemical gaseous phase deposit thickness is
The p-type polysilicon layer of 15-20nm；
6) magnetron sputtering deposition ITO indium tin oxide transparent is used to lead on the p-type polysilicon layer have reverse trapezoid shape
Conductive film, as transparent conductive electrode, forms three-dimensional inverted trapezoidal overall structure；
7) use electron beam evaporation process deposition argent on three-dimensional inverted trapezoidal overall structure top and etch formation front electricity
Pole；
8) use electron beam evaporation process deposition metallic aluminium to form the backplate of solaode at the N-type silicon substrate back side,
Complete the preparation of solaode based on GaN nano wire three dimensional structure.
Method the most according to claim 1, it is characterised in that step 2) described in dry etching, its technique join
Number is: RF power is 100W, chlorine flowrate 20ml/min, BCl3Flow be 8ml/min, Ar flow be 5ml/min,
In reaction chamber, pressure is 10mTorr.
Method the most according to claim 1, it is characterised in that step 3f) described in coupled ion etching, its carve
Erosion gas is SF6Or CF4, etch period is 3-5 minute.
Method the most according to claim 1, it is characterised in that step 4) described in plasma enhanced chemical gas
Depositing mutually, its technological parameter is: deposition power 100W, SiF4With H2Gas flow ratio be 50ml/min:10ml/min,
SiH4Flow is 0.5-0.7ml/min, reative cell pressure 100Pa, substrate temperature 300 DEG C.
Method the most according to claim 1, it is characterised in that step 5) described in plasma enhanced chemical gas
Depositing mutually, its technological parameter is: deposition power 100W, SiF4With H2Gas flow ratio be 50ml/min:10ml/min,
SiH4Flow is 0.5-0.7ml/min, B2H6Flow is 0.5ml/min, reative cell pressure 100Pa, substrate temperature 300 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510030070.6A CN104576803B (en) | 2015-01-21 | 2015-01-21 | Solaode based on GaN nano wire three dimensional structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510030070.6A CN104576803B (en) | 2015-01-21 | 2015-01-21 | Solaode based on GaN nano wire three dimensional structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576803A CN104576803A (en) | 2015-04-29 |
| CN104576803B true CN104576803B (en) | 2016-10-12 |
Family
ID=53092435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510030070.6A Active CN104576803B (en) | 2015-01-21 | 2015-01-21 | Solaode based on GaN nano wire three dimensional structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576803B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1139997C (en) * | 1997-03-21 | 2004-02-25 | 三洋电机株式会社 | Photovoltaic element and method for mfg. same |
| CN102770972A (en) * | 2010-01-27 | 2012-11-07 | 原子能和代替能源委员会 | Photovoltaic cell, including a crystalline silicon oxide passivation thin film, and method for producing same |
| CN204315610U (en) * | 2015-01-21 | 2015-05-06 | 中电投西安太阳能电力有限公司 | Based on the solar cell of GaN nano wire three-dimensional structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101086074B1 (en) * | 2009-02-18 | 2011-11-23 | 한국생산기술연구원 | Method for fabricating silicon nano wire, solar cell including silicon nano wire and method for fabricating solar cell |
| KR20140115515A (en) * | 2013-03-20 | 2014-10-01 | 경희대학교 산학협력단 | Multiple transparent electrode and organic solar cell using the same |
-
2015
- 2015-01-21 CN CN201510030070.6A patent/CN104576803B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1139997C (en) * | 1997-03-21 | 2004-02-25 | 三洋电机株式会社 | Photovoltaic element and method for mfg. same |
| CN102770972A (en) * | 2010-01-27 | 2012-11-07 | 原子能和代替能源委员会 | Photovoltaic cell, including a crystalline silicon oxide passivation thin film, and method for producing same |
| CN204315610U (en) * | 2015-01-21 | 2015-05-06 | 中电投西安太阳能电力有限公司 | Based on the solar cell of GaN nano wire three-dimensional structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576803A (en) | 2015-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Black silicon: fabrication methods, properties and solar energy applications | |
| CN105070792B (en) | A kind of preparation method of the polycrystalline solar cell based on solwution method | |
| WO2011001735A1 (en) | Thin-film solar battery and method for producing the same | |
| CN102074591A (en) | Composite micro-nano photon structure for enhancing absorption efficiency of solar cell and manufacturing method thereof | |
| CN102157608A (en) | Method for reducing surface light reflectivity of silicon chip | |
| JP2012142568A (en) | Photoelectric conversion element | |
| KR20110113189A (en) | Substrate en verre transparent glass substrate and method for producing such a substrate | |
| US20120073641A1 (en) | Solar cell apparatus having the transparent conducting layer with the structure as a plurality of nano-level well-arranged arrays | |
| CN104538470A (en) | Silicon nanowire array based solar battery and preparation method thereof | |
| CN104538476B (en) | Heterojunction solar battery based on silicon nanowire suede and preparation method thereof | |
| CN102254963A (en) | Graphene/silicon pillar array Schottky junction photovoltaic cell and manufacturing method thereof | |
| CN103811589A (en) | Manufacturing method of light trapping structures on front and back faces of semiconductor film solar cell | |
| CN103811590A (en) | Manufacturing method of mixed light trapping structures on front and back faces of semiconductor film solar cell | |
| KR101164326B1 (en) | Silicon thin film solar cells using periodic or random metal nanoparticle layer and fabrication method thereof | |
| CN104576783B (en) | Solar cell based on silicon nanowires three-dimensional structure and preparation method thereof | |
| CN104124286A (en) | Self-growing noble metal plasma element nano-structure and application thereof to increase of light absorption of GaInP-based solar cell | |
| CN104576803B (en) | Solaode based on GaN nano wire three dimensional structure and preparation method thereof | |
| JP2013012691A (en) | Method for manufacturing thin film solar cell and thin film solar cell | |
| CN102544200B (en) | Preparation method for nano solar cell light trapping structure | |
| CN102610665A (en) | Silicon nanoporous array structured concentrator solar cell and preparation method thereof | |
| CN108456895A (en) | A kind of α-Fe2O3/ Au nanometers of round platform array photoelectric pole and its preparation method and application | |
| CN204315594U (en) | Based on the solar cell of silicon nanowire array | |
| CN204315609U (en) | Based on the heterojunction solar battery of silicon nanowire suede | |
| Hussain et al. | Advanced Light scattering through various textured glass surface morphologies in thin film silicon solar cells | |
| CN204315610U (en) | Based on the solar cell of GaN nano wire three-dimensional structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |