CN104576358A - Substrate processing equipment - Google Patents
Substrate processing equipment Download PDFInfo
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- CN104576358A CN104576358A CN201410584852.XA CN201410584852A CN104576358A CN 104576358 A CN104576358 A CN 104576358A CN 201410584852 A CN201410584852 A CN 201410584852A CN 104576358 A CN104576358 A CN 104576358A
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- substrate
- lamp
- heating lamp
- gas inlet
- line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to substrate processing equipment, and especially relates to substrate processing equipment for carrying out a heat treatment on a substrate. The equipment comprises a heat treatment cavity, which comprises a heat treatment space for accommodating a substrate; a substrate support, which is arranged in the heat treatment space and is used for supporting the substrate; and a heating block; wherein the heating block comprises a heating lamp for generating heat and a gas inlet hole for injecting gas to the substrate support, and the heating lamp and the gas inlet hole both face the substrate support.
Description
Technical field
The present invention relates to a kind of substrate-treating apparatus, particularly relate to one on substrate, perform heat treated substrate-treating apparatus.
Background technology
Heat treatment is for the required program in the various processes of semiconductor, display etc.Ohmic contact alloy (ohmic contact alloying), implanted ions damage anneal (ion-implantation damageannealing), dopant activation (dopant activation), TiN, TiSi
2and CoSi
2film formation etc. all need heat treatment.
The example of equipment for Heating Processing comprises smelting furnace and rapid thermal process (rapid thermal process, RTP) equipment.RTP equipment did not cause concern because it be difficult to types of flexure equably holding temperature, be difficult to when substrate is replaced maintain substrate identical temperature-temporal characteristics and be difficult to accurately measure and control substrate temperature.But, owing to have developed temperature measure and control technology in recent years, so use RTP equipment to carry out alternative smelting furnace widely.
Fig. 1 is the configuration block diagram performing heat treated substrate-treating apparatus.
Perform heat treated substrate-treating apparatus and transfer heat to substrate S by using from the radiation of tungsten halogen lamp radiation.Therefore, perform heat treated substrate-treating apparatus and comprise heat block 10 and the multiple heating lamps 11 on the surface of the heat block 10 towards substrate S.The stripper pin (lift pin) 51 that thermal processing chamber 20 is equipped with substrate support (substratesupporter) 50 and allows substrate to move up and down, and substrate S is loaded into thermal processing chamber 20 by door 60 or unloads from thermal processing chamber 20.Thermal processing chamber 20 has the gas access 40 for injected gas and the exhaust outlet 70 for emission gases within it.
The window 30 be made up of clear quartz material is arranged between thermal processing chamber 20 and heat block 10 the heating lamp 11 in heat block 10 and the gas access 40 in thermal processing chamber 20 to be separated.Window 30 prevents particle (that is, pollutant) from flowing in the thermal processing chamber 20 be placed in below heat block 10, and transmit downwards the heat energy that produces from the heating lamp 11 heat block 10 with by thermal energy transfer to substrate.
Therefore, in the heat treated prior art substrate-treating apparatus of execution, injected gas is in one direction sentenced in the side that gas access 40 is arranged on thermal processing chamber 20, and therefore gas is not supplied equably.Further, as illustrated in figure 2, between the respective regions of thermal processing chamber 20, there is gas temperature differential.This have impact on heat treatment process.Especially, perform heat treatment equably under needing temperature between 80 DEG C to 850 DEG C for the manufacture of the large scale RTP equipment of AMOLED, solar energy, LED, semiconductor etc., this causes the uneven temperature in thermal processing chamber 20.
Further, gas access 40 is placed in thermal processing chamber 20, and therefore when heat treated substrate S will be stood break gas access 40 may be destroyed.In addition, because gas access 40 is placed in thermal processing chamber 20 inside, clean air entrance 40 is therefore not easy to.
[prior art document]
[patent documentation]
(patent documentation 1) No. 1031226 Korean Patent
Summary of the invention
The invention provides a kind of substrate-treating apparatus, the temperature difference between the respective regions of wherein thermal processing chamber is minimized.Present invention also offers a kind of substrate-treating apparatus, the gas homogeneity in its middle chamber and temperature homogeneity are improved.Present invention also offers a kind of substrate-treating apparatus, wherein gas inlet orifice is placed in the outside of thermal processing chamber so that clean.
According to exemplary embodiment, a kind of substrate-treating apparatus comprises: thermal processing chamber, and it has the heat treatment space for substrate; Substrate support, it is configured to support described substrate in described heat treatment space; And heat block, it comprises heating lamp and gas inlet orifice, described heating lamp is configured to produce heat energy, and described gas inlet orifice is configured to towards described substrate support injected gas, and wherein said heating lamp and described gas inlet orifice are set to towards described substrate support.
Described heat block can comprise: heat block shell, and it has the lamp mounting surface relative with substrate support, and has air flow path; Multiple heating lamp, it to be embedded in described heat block shell and to be exposed to lamp mounting surface place; And multiple gas inlet orifice, it is placed between described heating lamp, is connected to described air flow path, and is arranged in lamp mounting surface.
Gas inlet orifice can be placed between heating lamp.
When X-direction is perpendicular to Y-direction, multiple heating lamp can be settled along multiple line in the X direction, and multiple gas inlet orifice can be parallel to described line in the X direction and settle between described line.
The heating lamp be placed on the line of the odd-numbered on the line of the odd-numbered in line can be placed on alignment different from each other in the Y direction with the heating lamp be placed on the line of the even-numbered on the line of the even-numbered in line.
When X-direction is perpendicular to Y-direction, multiple heating lamp can be settled along the incline direction of multiple parallax in X direction and between Y-direction, and multiple gas inlet orifice can have identical slope with parallax and be placed between described parallax.
The line heating lamp being placed in the odd-numbered on the line of the odd-numbered in line and the line heating lamp being placed in the even-numbered on the line of the even-numbered in line can be placed on alignment different from each other in the Y direction.
Multiple heating lamp can be placed on multiple line and multiple gas inlet orifice can be settled along the periphery of heating lamp.
Heat block shell can have the lamp groove be recessed in lamp mounting surface, and heating lamp is placed in described lamp groove.
Described lamp groove can be spaced apart with intervenient separation surfaces, and described gas inlet orifice can be placed in described separation surfaces.
Be mounted with the line of heating lamp above can being parallel to and provide air flow path between described line.
Be mounted with the parallax of heating lamp above can being parallel to and form air flow path between described parallax.
Air flow path can be formed along the periphery of lamp groove.
Accompanying drawing explanation
The following description carried out in conjunction with the drawings can understand exemplary embodiment in more detail, wherein:
Fig. 1 is the configuration block diagram performing heat treated substrate-treating apparatus.
Fig. 2 is the heteropical view of diagram according to the temperature in the thermal processing chamber of injected air-flow.
Fig. 3 is the cross-sectional view according to the heat treated substrate-treating apparatus of the execution of exemplary embodiment.
Fig. 4 is the view of the heating lamp according to exemplary embodiment.
Fig. 5 is the cross-sectional view of the heat block shell according to exemplary embodiment.
Fig. 6 is diagram according to the heating lamp of embodiment and the view of arrangement being placed in the gas inlet orifice in lamp mounting surface.
Fig. 7 is diagram according to the heating lamp of another embodiment and the view of arrangement being placed in the gas inlet orifice in lamp mounting surface.
Fig. 8 and Fig. 9 is diagram according to the heating lamp of an embodiment again and the view of arrangement being placed in the gas inlet orifice in lamp mounting surface.
Description of reference numerals:
10 heat blocks
11 heating lamps
20 thermal processing chambers
30 windows
40 gas accesses
50 substrate supports
51 stripper pins
60
70 exhaust outlets
100 heat blocks
100a heat block shell
110 lamp mounting surface
200 thermal processing chambers
300 heating lamps
310 lamp sockets
320 lamp supports
330 lamp main bodys
350 lamp grooves
400 gas inlet orifice
400a gas inlet orifice
400b gas inlet orifice
410 air flow paths
500 substrate supports
510 stripper pins
600
700 exhaust outlets
Embodiment
Hereinafter, specific embodiment is described in detail with reference to accompanying drawing.But the present invention can use multi-form enforcement, and should not be construed as limited to embodiment described in this paper.In fact, provide these embodiments will to be thorough and complete to make the present invention, and scope of the present invention intactly will be conveyed to those skilled in the art.In the accompanying drawings, identical reference number refers to identical element.
Fig. 3 is the cross-sectional view according to the heat treated substrate-treating apparatus of the execution of exemplary embodiment, Fig. 4 is the view of the heating lamp according to exemplary embodiment, Fig. 5 is the cross-sectional view of the heat block shell according to exemplary embodiment, Fig. 6 is diagram according to the heating lamp of embodiment and the view of arrangement being placed in the gas inlet orifice in lamp mounting surface, Fig. 7 is diagram according to the heating lamp of another embodiment and the view of arrangement being placed in the gas inlet orifice in lamp mounting surface, and Fig. 8 and Fig. 9 is diagram according to the heating lamp of an embodiment again and the view of arrangement being placed in the gas inlet orifice in lamp mounting surface.
Thermal processing chamber 200 has inner space, provides described inner space to perform heat treatment on substrate to be heated.Substrate is placed in described inner space for heat treatment.For this reason, thermal processing chamber 200 is with closed quadrangle and the shape of the container of hollow manufactures, but it is not limited to this, and various container shapes can be possible.That is, cylindrical and polygonal container can be used.Thermal processing chamber 200 has the door 600 be separately positioned on its side and opposite side, entering and leaving for substrate, and door 600 is connected to substrate transfer module (not shown).
Thermal processing chamber 200 has the substrate support 500 for support substrates wherein.Substrate support 500 can implemented in many forms.For example, when substrate support 500 is formed with the shape of edge ring, edge ring can allow substrate to be placed on relative position towards the heat block 100 in heat treatment space.Substrate support 500 can be connected to the component for providing rise/fall power, such as, and cylinder.
Further, substrate support 500 can be equipped with wherein multiple stripper pins 510 of movement vertically.But, substrate support 500 is not limited to this, and therefore also can use the various components for support substrates on substrate support 500, such as, use the component (electrostatic chuck (electrostaticchuck)) of electrostatic force or use the component of vacuum force.For the purpose of reference, substrate to stand heat treated object to be heated (such as, AMOLED, solar energy, LED and semiconductor).
Heat block 100 comprises the heating lamp 300 that produces heat energy and for the gas inlet orifice 400 towards substrate support 500 injected gas, and heating lamp 300 and gas inlet orifice 400 are placed in lamp mounting surface 110 towards substrate support 500.Heat block 100 is the shape of top doors and the top sealing thermal processing chamber 200 affects from external environment condition (such as, pressure and pollutant) to protect thermal processing chamber 200.According to circumstances, heat block 100 and thermal processing chamber 200 can seal further by use sealant.Between heat block 100 and thermal processing chamber 200, do not provide extra window.
Heat block 100 comprises: heat block shell 100a, and it has the lamp mounting surface 110 relative with substrate support 500 and air flow path 410; Multiple heating lamp 300, it to be embedded in heat block shell 100a and to be exposed to relative surface; And multiple gas inlet orifice 400, it is placed between heating lamp 300, is connected to air flow path 410, and is formed in lamp mounting surface 110.
Heat block shell 100a has the air flow path 410 for being expelled to by environmental gas in heat treatment space.From environmental gas (such as, the N that extraneous gas supply section (not shown) is supplied
2gas) can be expelled in heat treatment space along the air flow path 410 in heat block shell 100a by gas inlet orifice 400.
Gas inlet orifice 400 is connected to air flow path 410 and is placed between gas-heated lamp 300.By gas inlet orifice 400, environmental gas (such as, N can be injected towards heat treatment space
2gas).For the purpose of reference, the gas be expelled in the heat treatment space in thermal processing chamber 200 can be discharged into outside by the exhaust outlet 700 be formed on thermal processing chamber 200.
The heating lamp 300 be arranged in the lamp mounting surface 110 of heat block shell 100a is heated by the electric power received from external power supply section (not shown).Heating lamp 300 can heat by using radiant heat the substrate be placed in heat treatment space.By more electric power is fed to heating lamp 300, heat treatment temperature can maintain between approximate 80 DEG C to 850 DEG C.
As illustrated in Figure 4, heating lamp 300 comprises: lamp main body 330, has filament and extend there through to allow radiant heat in described lamp main body 330; For the lamp support 320 of fixed light main body 330; And be coupled to lamp support 320 for the lamp socket 310 receiving external power.
Lamp main body 330 can have the shape of hollow pipeline, that is, tube shape.Lamp main body 330 can be T-shaped or linearly tubular.Certainly, lamp main body 330 is not limited to foregoing, and therefore can have the shape of bending, circular or oval band.Further, lamp main body 330 can be made up of glass or quartz.This can allow radiant heat pass lamp main body 330 and do not have any loss.In addition, lamp main body 330 can be filled with inert gas, such as argon gas.
As illustrated in Figure 4, heating lamp 300 can have the structure of partition type, wherein lamp main body 330, lamp support 320 and lamp socket 310 are can be separated, or alternatively, the structure of integrated curriculum types can be had, wherein can receive external power and lamp support 320 without the need to extra lamp socket forms with lamp main body 330.
In described exemplary embodiment, heating lamp 300 is formed in lamp mounting surface 110 together with gas inlet orifice 400.Heating lamp 300 is arranged in lamp mounting surface 110, and for this purpose, as illustrated in fig. 5, heat block shell 100a is equipped with the lamp groove 350 be recessed in lamp mounting surface 110, and heating lamp 300 is placed in described lamp groove 350.Lamp groove 350 is spaced apart with intervenient separation surfaces, and gas inlet orifice 400 is placed in described separation surfaces.In other words, gas inlet orifice 400 is placed between heating lamp 300.
There are three kinds of type of arrangement of the gas inlet orifice 400 between heating lamp 300, it is as follows.
First, heating lamp 300 and gas inlet orifice 400 can be arranged on the line of being separated by of equidirectional.With reference to the front view of lamp mounting surface 110 illustrated in figure 6, when the X-direction of transverse direction is perpendicular to one another with longitudinal Y-direction, multiple heating lamp 300 is settled along multiple line in the X direction, arranged parallel between multiple gas inlet orifice 400 line in the X direction.Therefore, multiple gas inlet orifice 400 to be placed on a line and heating lamp 300 is placed on another line.For the purpose of reference, heating lamp 300 is settled along line and is meaned that the central point point of filament (for example, locate) of heating lamp 300 is through arranging with along location such as the first line R1, the second line R2.Similarly, gas inlet orifice 400 is settled in the X direction and is meaned the central point of gas inlet orifice 400 arranged parallel between the line arranging heating lamp 300 edges between line.
Meanwhile, when the heating lamp 300 be placed on multiple line is placed on straight alignment in longitudinal Y-direction, may can not perform heating equably.Need to arrange to realize uniform heating to heating lamp 300.For this reason, as illustrated in fig. 6, the line heating lamp 300 being placed in the odd-numbered on the line of the odd-numbered in line and the line heating lamp 300 of even-numbered be placed on the line of the even-numbered in line need to be placed in the Y direction on alignment different from each other.For example, first the first lamp be placed in line R1, R3, R5 and R7 of odd-numbered is placed on the first identical alignment C1, and the first lamp be first placed in line R2, R4 and R6 of even-numbered is placed on the second identical alignment C2, the lamp in the lamp that is placed in line R1, R3, R5 and R7 of odd-numbered and line R2, R4, R6 of being placed in even-numbered is departed from the Y direction each other along alignment.
For arranging that between heating lamp 300 second type of arrangement of gas inlet orifice 400 is that heating lamp 300 and gas inlet orifice 400 are arranged with oblique form.As illustrated in figure 7, when X-direction and Y-direction perpendicular to one another time, multiple heating lamp 300 is settled along on the incline direction of multiple parallax between X-direction and Y-direction, and described multiple gas inlet orifice 400 has the slope identical with parallax and is placed between described parallax.When heating lamp 300 and gas inlet orifice 400 are arranged along these parallaxs, can perform equably and be raised and distribution of gas by the temperature of heating.
For arranging that between heating lamp 300 the 3rd type of arrangement of gas inlet orifice 400 is that gas inlet orifice 400 is settled around heating lamp 300.As Fig. 8 and illustrated in fig. 9, multiple heating lamp 300 is placed on multiple line, and multiple gas inlet orifice 400a settles along the periphery of heating lamp 300.For example, as illustrated in figure 8, multiple heating lamp 300 can be settled along multiple line in the X-axis direction, and multiple gas inlet orifice 400a can settle along the periphery of heating lamp 300.For this purpose, the central point of lamp groove 350 is along the multiple line location be positioned in the lamp mounting surface 110 of heat block shell 100a, and multiple gas inlet orifice 400a is respectively formed on the periphery of lamp groove 350.
In addition, multiple gas inlet orifice 400b is mounted with on the identical line of multiple heating lamp 300 above can being placed in extraly.For example, as illustrated in figure 8, heating lamp 300 is settled along the first line, and multiple gas inlet orifice 400b is mounted with on the first line of heating lamp 300 above being placed in extraly.
Therefore, can by lamp mounting surface 110 equably distributing gas ingate 400a and 400b perform uniform gas injection.
As illustrated in figure 9, multiple heating lamp 300 is settled along multiple alignment in the Y-axis direction, and multiple gas inlet orifice 400 is settled along the periphery of heating lamp 300 and line.
According to the shape of air flow path, determine the position of the multiple gas inlet orifice be placed on air flow path.In other words, the position of gas inlet orifice can change along with the shape of air flow path.
Be formed in air flow path 410 on heat block 100 to be formed with various shape and as illustrated in figure 9, be mounted with the alignment of heating lamp above being parallel to and form air flow path 410 between described alignment, gas inlet orifice 400 is formed on parallel air flow path 410.
As illustrated in figure 7, can be parallel to above be mounted with the parallax of heating lamp 300 and form air flow path 410 between described parallax.As Fig. 8 and illustrated in fig. 9, air flow path 410 can be formed along the periphery of lamp groove 350.
According to exemplary embodiment, heat block is equipped with gas access, and the temperature difference between the respective regions that therefore can minimize thermal processing chamber.Therefore, the uniformity of the substrate be heat-treated can be improved.According to exemplary embodiment, gas inlet orifice is positioned in heat block, therefore makes gas inlet orifice easy to clean.Further, the extra window physically separating heat block and thermal processing chamber is not needed.
Although describe the present invention with reference to specific embodiment, it is not limited to this, and scope of the present invention is defined by claims.Therefore, those skilled in the art will readily appreciate that, when not departing from the spirit and scope of the present invention defined by claims, can carry out various amendment and change to it.
Claims (13)
1. a substrate-treating apparatus, is characterized in that comprising:
Thermal processing chamber, has the heat treatment space for substrate;
Substrate support, is configured to support described substrate in described heat treatment space; And
Heat block, comprises heating lamp and gas inlet orifice, and described heating lamp is configured to produce heat energy, and described gas inlet orifice is configured to towards described substrate support injected gas, and wherein said heating lamp and described gas inlet orifice are set to towards described substrate support.
2. substrate-treating apparatus according to claim 1, wherein said heat block comprises:
Heat block shell, has the lamp mounting surface relative with described substrate support, and has air flow path;
Multiple described heating lamp, to be embedded in described heat block shell and to be exposed to described lamp mounting surface place; And
Multiple described gas inlet orifice, is placed between described heating lamp, is connected to described air flow path, and is arranged in described lamp mounting surface.
3. substrate-treating apparatus according to claim 1, wherein said gas inlet orifice is placed between described heating lamp.
4. substrate-treating apparatus according to claim 3, wherein when X-direction is perpendicular to Y-direction, multiple described heating lamp is settled along multiple line in described X-direction, and multiple described gas inlet orifice is parallel to described line and settles between described line in described X-direction.
5. substrate-treating apparatus according to claim 4, the described heating lamp being wherein placed in the odd-numbered line on the line of the odd-numbered in described line and the described heating lamp of even-numbered line be placed on the line of the even-numbered in described line are placed on alignment different from each other in described Y-direction.
6. substrate-treating apparatus according to claim 3, wherein when X-direction is perpendicular to Y-direction, multiple described heating lamp is settled along multiple parallax along the incline direction between described X-direction and described Y-direction, and multiple described gas inlet orifice has identical slope with described parallax and is placed between described parallax.
7. substrate-treating apparatus according to claim 3, wherein multiple described heating lamp to be placed on multiple line and multiple described gas inlet orifice is settled along the periphery of described heating lamp.
8. substrate-treating apparatus according to claim 7, is mounted with on the identical described line of described multiple heating lamp above wherein said multiple gas inlet orifice is placed in.
9. substrate-treating apparatus according to claim 2, wherein said heat block shell has lamp groove, and be recessed in described lamp mounting surface, described heating lamp is placed in described lamp groove.
10. substrate-treating apparatus according to claim 9, wherein said lamp groove is spaced apart with intervenient separation surfaces, and described gas inlet orifice is placed in described separation surfaces.
11. substrate-treating apparatus according to claim 4, are mounted with the described line of described heating lamp and provide air flow path between described lines above being wherein parallel to.
12. substrate-treating apparatus according to claim 6, are mounted with the described parallax of described heating lamp and form air flow path between described parallaxs above being wherein parallel to.
13. substrate-treating apparatus according to claim 9, the periphery wherein along described lamp groove forms air flow path.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2013-0128524 | 2013-10-28 | ||
| KR20130128524 | 2013-10-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104576358A true CN104576358A (en) | 2015-04-29 |
Family
ID=53051176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410584852.XA Pending CN104576358A (en) | 2013-10-28 | 2014-10-27 | Substrate processing equipment |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2015088749A (en) |
| CN (1) | CN104576358A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504187A (en) * | 2018-05-18 | 2019-11-26 | Ap系统股份有限公司 | Heater block and Equipment for Heating Processing and method |
| CN111263977A (en) * | 2017-10-30 | 2020-06-09 | 应用材料公司 | Multi-zone spot heating in EPI |
| CN114388654A (en) * | 2021-12-13 | 2022-04-22 | 泰州隆基乐叶光伏科技有限公司 | Silicon wafer heating device and method |
| CN117497461A (en) * | 2023-12-29 | 2024-02-02 | 无锡尚积半导体科技有限公司 | Wafer coating pretreatment device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101809141B1 (en) * | 2014-05-29 | 2018-01-19 | 에이피시스템 주식회사 | Apparatus for heating substrate and heater block |
-
2014
- 2014-10-16 JP JP2014211848A patent/JP2015088749A/en active Pending
- 2014-10-27 CN CN201410584852.XA patent/CN104576358A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111263977A (en) * | 2017-10-30 | 2020-06-09 | 应用材料公司 | Multi-zone spot heating in EPI |
| CN111263977B (en) * | 2017-10-30 | 2023-09-26 | 应用材料公司 | Multi-zone spot heating in EPI |
| CN110504187A (en) * | 2018-05-18 | 2019-11-26 | Ap系统股份有限公司 | Heater block and Equipment for Heating Processing and method |
| CN114388654A (en) * | 2021-12-13 | 2022-04-22 | 泰州隆基乐叶光伏科技有限公司 | Silicon wafer heating device and method |
| CN114388654B (en) * | 2021-12-13 | 2023-10-24 | 泰州隆基乐叶光伏科技有限公司 | Silicon wafer heating device and method |
| CN117497461A (en) * | 2023-12-29 | 2024-02-02 | 无锡尚积半导体科技有限公司 | Wafer coating pretreatment device |
| CN117497461B (en) * | 2023-12-29 | 2024-04-12 | 无锡尚积半导体科技有限公司 | Wafer coating pretreatment device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015088749A (en) | 2015-05-07 |
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Application publication date: 20150429 |