CN104576284A - Phototube for measuring transmittance of ultraviolet cathode - Google Patents

Phototube for measuring transmittance of ultraviolet cathode Download PDF

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Publication number
CN104576284A
CN104576284A CN201310494118.XA CN201310494118A CN104576284A CN 104576284 A CN104576284 A CN 104576284A CN 201310494118 A CN201310494118 A CN 201310494118A CN 104576284 A CN104576284 A CN 104576284A
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negative electrode
quartz glass
ultraviolet light
ring flange
light photo
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CN201310494118.XA
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CN104576284B (en
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李晓峰
李浩雷
瞿利平
冯辉
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North Night Vision Technology Co Ltd
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North Night Vision Technology Co Ltd
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Abstract

The invention discloses a phototube for measuring transmittance of an ultraviolet cathode and mainly used for measuring the transmittance of the ultraviolet cathode of an ultraviolet image intensifier. The technical scheme adopted by the invention is as follows: the phototube includes a Kovar ring, a flange plate is welded to each of the two ends of the Kovar ring to form a tube shell; the flange plates and quartz glass are connected in a sealing manner at the upper part of the tube shell to form a cathode quartz glass input window; an ultraviolet cathode layer is made on the inner circular area of the quartz glass; an anode quartz glass output window is welded to the flange plates at the lower part of the tube shell. Applications prove that, the phototube provided by the invention can easily and accurately measure the transmittance of the ultraviolet cathode; during the development of the ultraviolet cathode, the formula for preparing the ultraviolet cathode is optimized, so that the ultraviolet cathode with high cathode sensitivity is produced; the ultraviolet cathode plays an important role in improving the comprehensive technical performance of the ultraviolet image intensifier.

Description

A kind of photoelectric tube for measuring ultraviolet light photo negative electrode transmitance
Technical field
the present invention relates to a kind of survey tool of photocathode index, be mainly used in the transmitance of the ultraviolet light photo negative electrode measuring ultraviolet imaging enhancer.Also can be used for the measurement of the similar index of other photoelectric device.
Background technology
ultraviolet imaging enhancer (see figure 1), forms primarily of negative electrode quartz glass input window 1, ultraviolet light photo negative electrode 2, microchannel plate 3, phosphor screen 4, anode optical glass output window 5 and shell 6.Main operational principle: the ultraviolet light of scenery incides on ultraviolet light photo negative electrode 2 by negative electrode quartz glass input window 1, be converted to charge pattern, charge pattern is after microchannel plate 3 strengthens, be transmitted on phosphor screen 4, be converted into visual optical image, export, for eye-observation through anode optical glass output window 5 again.Ultraviolet imaging enhancer has been used in observes guided missile to attack the aspects such as alarm, the identification of fingerprint and communication.Ultraviolet imaging enhancer high-end is at present primarily of external monopolization, expensive.Therefore develop domestic ultraviolet imaging enhancer and substitute import, realize the production domesticization of ultraviolet imaging enhancer, have important practical significance.The core of ultraviolet imaging enhancer is ultraviolet light photo negative electrode, develop high-caliber ultraviolet imaging enhancer, first the ultraviolet light photo negative electrode will developed, according to photoemissive principle, make the cathode sensitivity of ultraviolet light photo Cathode photoemission high, first just should require that ultraviolet light photo negative electrode wants high to the absorptivity of incident uv, the absorptivity measuring ultraviolet light photo negative electrode develops the indispensable means of high cathode sensitivity ultraviolet light photo negative electrode.And the transmitance (just learning its absorptivity) measuring ultraviolet light photo negative electrode is an important indicator of ultraviolet light photo negative electrode, this, to the structure of research ultraviolet light photo negative electrode, improves its spectral sensitivity and has important reference value.
because the spectral response of ultraviolet light photo negative electrode is between 200 ~ 320nm, cathode film layer must be made on quartz glass input window and be kept among vacuum, measure the transmitance of ultraviolet light photo negative electrode, the anode output window of ultraviolet light photo negative electrode is just needed also can, through the ultraviolet light within the scope of 200 ~ 320nm, so just to need the anode output window of ultraviolet light photo negative electrode to be also quartz glass.But because the coefficient of expansion of quartz glass is less, can not with kovar alloy sealing-in, even if moreover have employed quartz glass as anode output window, be also infeasible concerning ultraviolet imaging enhancer because anode output window export be visual optical image instead of UV image.Due to microchannel plate, phosphor screen, optical glass output window all can not be through to ultraviolet light, so just directly can not measure the transmitance of its ultraviolet light photo negative electrode.This problem hampers the research of ultraviolet light photo negative electrode always.Therefore only look for another way, seek new mode and solve.
Summary of the invention
the main technical problem to be solved in the present invention and object are: according to the current difficult problem existed ultraviolet light photo negative electrode Transmissivity measurement, design a kind of special photoelectric tube, to the measurement of ultraviolet light photo negative electrode transmitance, fundamentally overcome the defect that ultraviolet light photo negative electrode transmitance cannot be measured.Realize objective and accurately to the measurement of ultraviolet light photo negative electrode transmitance, for the research and development of ultraviolet imaging enhancer provides scientific basis.
main technical schemes of the present invention is: the structure of photoelectric tube, by a kovar alloy ring, oxygenless copper washer is passed through at two ends, respectively be welded with a ring flange, form shell, on shell top, ring flange is by indium stannum alloy sealing-in one block of quartz glass, the step surface of quartz glass is coated with layers of chrome, form negative electrode quartz glass input window, the inner circle area of quartz glass makes one deck to there being photoemissive ultraviolet light photo negative electrode in 200-320nm wave-length coverage, in shell bottom, ring flange welds an anode quartz glass output window identical with negative electrode quartz glass input window structure.
the present invention passes through application attestation: reach development object completely, and photoelectric tube, under the cooperation of other General Instrument, can measure Cs smoothly exactly 2 the transmitance of Te ultraviolet light photo negative electrode, thus learn the spectral absorption of ultraviolet light photo negative electrode.In the making of ultraviolet light photo negative electrode, optimize the formula of ultraviolet light photo negative electrode, have developed the Cs of high cathode sensitivity 2 te ultraviolet light photo negative electrode, cathode sensitivity reaches 67mA/W at 250nm wavelength place, reaches advanced world standards, for the comprehensive technical performance improving ultraviolet imaging enhancer has played obvious effect.Structure of the present invention and metering system belong to domestic initiation.
Accompanying drawing explanation
below in conjunction with accompanying drawing, enforcement of the present invention is described in further detail.
fig. 1 is the basic structure schematic diagram of existing ultraviolet imaging enhancer.
fig. 2 is concrete structure schematic diagram of the present invention.
fig. 3 is shell process chart of the present invention.
fig. 4 is the process chart that quartz glass of the present invention is coated with chromium rete.
fig. 5 is that ring flange of the present invention fuses with indium stannum alloy the process chart welded.
fig. 6 is that ring flange of the present invention fuses with quartz glass the process chart welded.
fig. 7 is that shell of the present invention fuses with indium stannum alloy the process chart welded.
fig. 8 is the process chart that shell of the present invention welds with anode quartz glass output window.
fig. 9 is the fundamental diagram that the present invention measures ultraviolet light photo negative electrode transmitance.
Embodiment
with reference to Fig. 2, technical scheme of the present invention is described: concrete structure of the present invention is, by a kovar alloy ring 7, two ends are respectively welded with a ring flange 9 by oxygenless copper washer 8, form shell, on shell top, ring flange 9 is by indium stannum alloy (13) sealing-in one block of quartz glass 10, the step surface of quartz glass 10 is coated with layers of chrome 11, forming negative electrode quartz glass input window, the inner circle area of quartz glass 10 making one deck to there being photoemissive ultraviolet light photo negative electrode (Cs in 200-320nm wave-length coverage 2 te) 12, in shell bottom, ring flange 9 welds an anode quartz glass output window identical with negative electrode quartz glass input window structure.
described kovar alloy ring 1, the material of ring flange 9 are kovar alloy, and the trade mark is 4J34; Quartz glass 10 is conventional quartz glasss in optics industry; The thickness of oxygenless copper washer is 0.3mm.
manufacturing process of the present invention:
a, reference Fig. 3, an oxygenless copper washer 8 is respectively filled at the two ends of kovar alloy ring 7, respectively fill ring flange 9 at oxygenless copper washer about 8, the assembly installed is put into vacuum furnace, temperature is raised to 1150 DEG C, after being incubated 2 hours, Temperature fall is to room temperature, take out the shell that sealing-in is good, (be incubated in the process of 2 hours, because oxygenless copper washer 8 melts, two ring flanges 9 and kovar alloy ring 7 are sealed, forms shell);
b, reference Fig. 4, put into vacuum coating equipment by quartz glass 10, when the vacuum degree of coating machine reaches 5 × 10 -6 during holder, open electron gun, utilize the chromium evaporation source in electron-beam evaporator heating crucible, the step surface of quartz glass 10 is coated with layers of chrome 11, thickness is 100nm;
c, reference Fig. 5, put into the groove of ring flange 9, ring flange 9 put into vacuum furnace, 5 × 10 by the particle of a certain amount of indium stannum alloy (In:Sn=48%:52%) 13 -5 under the vacuum condition of holder, vacuum furnace is heated up, heating flange dish also melts the particle of indium stannum alloy 13, makes indium stannum alloy 13 be welded in the groove of ring flange 9 uniformly, is naturally down to room temperature after being incubated 12 hours under 500 DEG C of temperature conditions, taking-up ring flange;
d, reference Fig. 6, being placed on by the quartz window 10 with chromium plating rete to melt has on the ring flange 9 of indium stannum alloy, afterwards ring flange 9 is put into vacuum furnace, 5 × 10 -5 make vacuum furnace be warming up to 500 DEG C under the vacuum condition of holder, be incubated and be naturally down to room temperature after 2 hours, take out ring flange 9, form anode quartz glass output window, (this process, quartz glass 10 and ring flange 9 seal after melting by indium stannum alloy 13);
e, reference Fig. 7, put into the groove of the ring flange 9 of shell, shell put into vacuum furnace, 5 × 10 by the particle of a certain amount of indium stannum alloy 13 -5 under the vacuum condition of holder, vacuum furnace is heated up, heating flange dish also melts the particle of indium stannum alloy 13, makes indium stannum alloy 13 be welded in the groove of ring flange 9 uniformly, is incubated 12 hours, is naturally down to room temperature afterwards under 500 DEG C of temperature conditions, taking-up shell;
f, reference Fig. 8, by anode quartz glass output window good for step D sealing-in and shell, by two ring flanges 9, weld together by the method for argon arc welding, forms the shell assembly of band anode output window;
g, reference Fig. 2, by with the quartz window 10 of chromium plating rete and the shell assembly (see figure 8) of band anode output window, put into ultraviolet light photo negative electrode making apparatus simultaneously, the vacuum bakeout degasification that vacuum chamber carries out 320 DEG C is made to the photocathode of equipment, time is about 12 hours, cool the temperature to the temperature (210-220 DEG C) that ultraviolet light photo negative electrode makes afterwards, on the inner circle area of the quartz glass 10 with chromium plating rete, make one deck to there being photoemissive ultraviolet light photo negative electrode 12(Cs in 200 ~ 320nm wave-length coverage 2 te), after ultraviolet light photo negative electrode 12 completes, the temperature of equipment is remained on 130 DEG C, vacuum machine transfer device is utilized will to make the quartz window 10 of ultraviolet light photo negative electrode 12 rete, be delivered to the top of the shell assembly ring flange 9 of band anode input window, put down gently, seal with the indium stannum alloy 13 melted in ring flange groove, afterwards the temperature of ultraviolet light photo negative electrode making apparatus is down to room temperature, takes out Manufactured photoelectric tube.(equipment wherein making ultraviolet light photo negative electrode is identical with the photocathode of existing making ultraviolet imaging enhancer with operation).
the key technology of the present invention on technique makes is: in negative electrode input window and anode output window, and two pieces of quartz windows 10 that shape and structure is identical and ring flange 9, adopt indium stannum alloy sealing-in.By adopting the structure of this pair of indium envelope, successfully solve technology difficult problem quartz glass and kovar alloy sealed.
with reference to Fig. 9, operation principle of the present invention: light source 14(deuterium lamp) light incide on monochromator 15, carry out after light splitting through monochromator, form the monochromatic light of different wave length, measure with photomultiplier 17 the monochromatic ultraviolet light incident power I that monochromator exports 1 .Again the monochromatic ultraviolet light that monochromator exports is incided on photoelectric tube 16, through the ultraviolet light photo negative electrode of photoelectric tube, ultraviolet light a part absorb by ultraviolet light photo negative electrode, a part is through ultraviolet light photo negative electrode in addition, form ultraviolet emergent light, then measure the power I of this outgoing ultraviolet light with photomultiplier 17 2 .I measured by photomultiplier 2 and I 1 ratio (I 2 / I 1 ) be transmitance (watt), shown by display 18.

Claims (2)

1. one kind for measuring the photoelectric tube of ultraviolet light photo negative electrode transmitance, it is characterized in that: by a kovar alloy ring (7), two ends are respectively welded with a ring flange (9) by oxygenless copper washer (8), form shell, on shell top, ring flange (9) is by indium stannum alloy (13) sealing-in one piece of quartz glass (10), the step surface of quartz glass (10) is coated with layers of chrome (11), form negative electrode quartz glass input window, the inner circle area of quartz glass (10) makes one deck to there being photoemissive ultraviolet light photo negative electrode (12) in 200-320nm wave-length coverage, in shell bottom, the anode quartz glass output window that ring flange (9) welding one is identical with negative electrode quartz glass input window structure.
2. the photoelectric tube for measuring ultraviolet light photo negative electrode transmitance according to claim 1, is characterized in that: the process manufacturing the photoelectric tube measuring ultraviolet light photo negative electrode transmitance:
A, at the two ends of kovar alloy ring (7), an oxygenless copper washer (8) is respectively housed, at oxygenless copper washer (8), ring flange (9) is respectively housed up and down, the assembly installed is put into vacuum furnace, temperature is raised to 1150 DEG C, after being incubated 2 hours, Temperature fall is to room temperature, takes out the shell that sealing-in is good;
B, quartz glass (10) is put into vacuum coating equipment, when the vacuum degree of coating machine reaches 5 × 10 -6during holder, open electron gun, utilize the chromium evaporation source in electron-beam evaporator heating crucible, the step surface of quartz glass (10) is coated with layers of chrome (11), thickness is 100nm;
C, the particle of indium stannum alloy (13) is put into the groove of ring flange (9), ring flange (9) is put into vacuum furnace, 5 × 10 -5under the vacuum condition of holder, vacuum furnace is heated up, heating flange dish also melts the particle of indium stannum alloy (13), make indium stannum alloy 13 be welded in the groove of ring flange (9) uniformly, be naturally down to room temperature be incubated 12 hours under 500 DEG C of temperature conditions after, take out ring flange;
D, the quartz window (10) with chromium plating rete is placed on moltenly has on the ring flange (9) of indium stannum alloy, afterwards ring flange (9) is put into vacuum furnace, 5 × 10 -5make vacuum furnace be warming up to 500 DEG C under the vacuum condition of holder, be incubated and be naturally down to room temperature after 2 hours, take out ring flange (9), form anode quartz glass output window;
E, the particle of indium stannum alloy (13) is put into the groove of the ring flange (9) of shell, shell is put into vacuum furnace, 5 × 10 -5under the vacuum condition of holder, vacuum furnace is heated up, heating flange dish (9) also melts the particle of indium stannum alloy (13), indium stannum alloy (13) is welded in the groove of ring flange uniformly, under 500 DEG C of temperature conditions, is incubated 12 hours, naturally be down to room temperature afterwards, take out shell;
F, by anode quartz glass output window good for step D sealing-in and shell, by two ring flanges (9), to weld together by the method for argon arc welding, form the shell assembly of band anode output window;
G, by with the quartz window (10) of chromium plating rete and the shell assembly of band anode output window, put into ultraviolet light photo negative electrode making apparatus simultaneously, the vacuum bakeout degasification that vacuum chamber carries out 320 DEG C is made to the photocathode of equipment, time is 12 hours, cool the temperature to the temperature 210 DEG C that ultraviolet light photo negative electrode makes afterwards, on the inner circle area of the quartz glass (10) with chromium plating rete, make one deck to there being photoemissive ultraviolet light photo negative electrode (12) in 200 ~ 320nm wave-length coverage, after ultraviolet light photo negative electrode (12) completes, the temperature of ultraviolet light photo negative electrode making apparatus is remained on 130 DEG C, vacuum machine transfer device is utilized the quartz window (10) having made ultraviolet light photo negative electrode (12) rete to be delivered to the top of the shell assembly ring flange (9) of band anode input window, put down gently, seal with the indium stannum alloy (13) melted in ring flange groove, afterwards the temperature of ultraviolet light photo negative electrode making apparatus is down to room temperature, take out Manufactured photoelectric tube.
CN201310494118.XA 2013-10-21 2013-10-21 A kind of photocell for measuring ultraviolet light photo negative electrode transmitance Active CN104576284B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112880974A (en) * 2021-01-14 2021-06-01 北方夜视技术股份有限公司 Detection device, clamp and method for influence of MCP reflectivity on cathode sensitivity
CN114058447A (en) * 2021-03-31 2022-02-18 杭州安誉科技有限公司 Photocathode for photomultiplier and method for producing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL114181A (en) * 1995-06-15 1999-07-14 Orlil Ltd Color image intensifier device and a method for producing the same
CN101393837B (en) * 2008-11-10 2010-06-02 中国兵器工业第二〇五研究所 Photocathode of nano second response gleam image intensifier and manufacturing method thereof
CN102403048A (en) * 2011-12-09 2012-04-04 电子科技大学 AlZnO ultraviolet photoelectric cathode material and ultraviolet vacuum image intensifier
CN202616185U (en) * 2011-12-16 2012-12-19 北方夜视技术股份有限公司 Image intensifier using light cone as output window
CN203503603U (en) * 2013-10-21 2014-03-26 北方夜视技术股份有限公司 Photoelectric tube used for measuring ultraviolet photocathode transmittance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112880974A (en) * 2021-01-14 2021-06-01 北方夜视技术股份有限公司 Detection device, clamp and method for influence of MCP reflectivity on cathode sensitivity
CN112880974B (en) * 2021-01-14 2023-04-11 北方夜视技术股份有限公司 Detection device, fixture and method for influence of MCP reflectivity on cathode sensitivity
CN114058447A (en) * 2021-03-31 2022-02-18 杭州安誉科技有限公司 Photocathode for photomultiplier and method for producing the same
CN114058447B (en) * 2021-03-31 2022-07-01 杭州安誉科技有限公司 Photocathode for photomultiplier and method for producing the same

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