CN104572385B - Memory fault detection system and method - Google Patents
Memory fault detection system and method Download PDFInfo
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- CN104572385B CN104572385B CN201410849720.5A CN201410849720A CN104572385B CN 104572385 B CN104572385 B CN 104572385B CN 201410849720 A CN201410849720 A CN 201410849720A CN 104572385 B CN104572385 B CN 104572385B
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CN201410849720.5A CN104572385B (en) | 2014-12-29 | 2014-12-29 | Memory fault detection system and method |
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CN201410849720.5A CN104572385B (en) | 2014-12-29 | 2014-12-29 | Memory fault detection system and method |
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CN104572385B true CN104572385B (en) | 2021-04-09 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105427894A (en) * | 2015-11-09 | 2016-03-23 | 浪潮电子信息产业股份有限公司 | DDR (double data Rate) rapid measurement method |
CN105895166B (en) * | 2016-03-31 | 2019-06-14 | 中国人民解放军国防科学技术大学 | A kind of debugging control unit and adjustment method for supporting the debugging of DDR3 data path |
CN106776162A (en) * | 2016-11-28 | 2017-05-31 | 郑州云海信息技术有限公司 | A kind of method of signal supervisory instrument and its detection internal memory signal |
CN109743631A (en) * | 2019-01-16 | 2019-05-10 | 四川长虹电器股份有限公司 | Realize that TV DDR stores the system and method diagnosed automatically |
CN113160726B (en) * | 2020-01-03 | 2023-11-14 | 西安诺瓦星云科技股份有限公司 | Power-on self-detection method and power-on self-detection device |
CN112712847A (en) * | 2020-12-25 | 2021-04-27 | 东莞记忆存储科技有限公司 | Device and method for testing quality of storage particles, computer equipment and storage medium |
CN113933549A (en) * | 2021-10-21 | 2022-01-14 | 中国人民解放军国防科技大学 | DDR signal quality auxiliary test fixture and test method |
Citations (3)
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CN102520710A (en) * | 2011-11-28 | 2012-06-27 | 曙光信息产业(北京)有限公司 | Detection device of field programmable gate array (FPAG) control equipment and method thereof |
CN103778969A (en) * | 2012-10-19 | 2014-05-07 | 鸿富锦精密工业(深圳)有限公司 | Memory load capacity testing apparatus |
CN103915120A (en) * | 2013-01-05 | 2014-07-09 | 鸿富锦精密工业(深圳)有限公司 | Memory bar voltage testing device and method thereof |
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US7834615B2 (en) * | 2007-07-02 | 2010-11-16 | Texas Instruments Incorporated | Bist DDR memory interface circuit and method for self-testing the same using phase relationship between a data signal and a data strobe signal |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102520710A (en) * | 2011-11-28 | 2012-06-27 | 曙光信息产业(北京)有限公司 | Detection device of field programmable gate array (FPAG) control equipment and method thereof |
CN103778969A (en) * | 2012-10-19 | 2014-05-07 | 鸿富锦精密工业(深圳)有限公司 | Memory load capacity testing apparatus |
CN103915120A (en) * | 2013-01-05 | 2014-07-09 | 鸿富锦精密工业(深圳)有限公司 | Memory bar voltage testing device and method thereof |
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Effective date of registration: 20171206 Address after: 519000 Guangdong city of Zhuhai province Hengqin Baohua Road No. 6, room 105, -23898 (central office) Applicant after: Zhongxing Technology Co., Ltd. Applicant after: Vimicro Electronics Co., Ltd. Address before: 100083 Haidian District, Xueyuan Road, No. 35, the world building, the second floor of the building on the ground floor, No. 16 Applicant before: Beijing Vimicro Corporation Applicant before: Vimicro Electronics Co., Ltd. |
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Address after: 519031 Guangdong city of Zhuhai province Hengqin Baohua Road No. 6, room 105, -23898 (central office) Applicant after: Mid Star Technology Limited by Share Ltd Applicant after: Vimicro Electronics Co., Ltd. Address before: 519000 Guangdong city of Zhuhai province Hengqin Baohua Road No. 6, room 105, -23898 (central office) Applicant before: Zhongxing Technology Co., Ltd. Applicant before: Vimicro Electronics Co., Ltd. |
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