CN104572336A - 一种闪存错误检测方法及装置 - Google Patents
一种闪存错误检测方法及装置 Download PDFInfo
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- CN104572336A CN104572336A CN201510017290.5A CN201510017290A CN104572336A CN 104572336 A CN104572336 A CN 104572336A CN 201510017290 A CN201510017290 A CN 201510017290A CN 104572336 A CN104572336 A CN 104572336A
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111078498A (zh) * | 2019-12-03 | 2020-04-28 | 山东华芯半导体有限公司 | 一种ssd中数据巡检的方法 |
CN111737042A (zh) * | 2020-05-26 | 2020-10-02 | 上海汽车工业(集团)总公司 | Nand-flash page位翻转控制方法及控制模块 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090204752A1 (en) * | 2006-10-20 | 2009-08-13 | Fujitsu Limited | Memory device and refresh adjusting method |
CN101796497A (zh) * | 2007-07-18 | 2010-08-04 | 富士通株式会社 | 存储器刷新装置和存储器刷新方法 |
US20100332943A1 (en) * | 2009-06-29 | 2010-12-30 | Sandisk Corporation | Method and device for selectively refreshing a region of a non-volatile memory of a data storage device |
CN103092531A (zh) * | 2013-01-21 | 2013-05-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种消除固态存储系统读取错误的方法 |
CN103745753A (zh) * | 2013-12-17 | 2014-04-23 | 记忆科技(深圳)有限公司 | 基于闪存的纠错方法与系统 |
CN103839578A (zh) * | 2012-11-27 | 2014-06-04 | 李欣 | 一种提高基于nand的固态存储器数据保持时间的方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090204752A1 (en) * | 2006-10-20 | 2009-08-13 | Fujitsu Limited | Memory device and refresh adjusting method |
CN101796497A (zh) * | 2007-07-18 | 2010-08-04 | 富士通株式会社 | 存储器刷新装置和存储器刷新方法 |
US20100332943A1 (en) * | 2009-06-29 | 2010-12-30 | Sandisk Corporation | Method and device for selectively refreshing a region of a non-volatile memory of a data storage device |
CN103839578A (zh) * | 2012-11-27 | 2014-06-04 | 李欣 | 一种提高基于nand的固态存储器数据保持时间的方法 |
CN103092531A (zh) * | 2013-01-21 | 2013-05-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种消除固态存储系统读取错误的方法 |
CN103745753A (zh) * | 2013-12-17 | 2014-04-23 | 记忆科技(深圳)有限公司 | 基于闪存的纠错方法与系统 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111078498A (zh) * | 2019-12-03 | 2020-04-28 | 山东华芯半导体有限公司 | 一种ssd中数据巡检的方法 |
CN111737042A (zh) * | 2020-05-26 | 2020-10-02 | 上海汽车工业(集团)总公司 | Nand-flash page位翻转控制方法及控制模块 |
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Effective date of registration: 20180704 Address after: 511458 room 805, No. 80, Hong Kong Road, Nansha District, Guangzhou, Guangdong. Patentee after: Guangdong Huasheng Data Solid State Storage Co.,Ltd. Address before: 510507 8, 188, Yue Ken Road, Tianhe District, Guangzhou, Guangdong. Patentee before: GUANGDONG ELECTRONICS INFORMATION INDUSTRY GROUP LTD. |
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Denomination of invention: Method and device for detecting flash memory errors Effective date of registration: 20200629 Granted publication date: 20180126 Pledgee: GUANGDONG ELECTRONICS INFORMATION INDUSTRY Group Ltd. Pledgor: Guangdong Huasheng Data Solid State Storage Co.,Ltd. Registration number: Y2020440000171 |
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Effective date of registration: 20240403 Address after: Building 6 (North), 1st Floor, No. 1 Shuangqing Road, Haidian District, Beijing, 100000, 123-6 Patentee after: Beijing Zhongxin Information Technology Co.,Ltd. Country or region after: China Address before: 511458 room 805, No. 80, Hong Kong Road, Nansha District, Guangzhou, Guangdong. Patentee before: Guangdong Huasheng Data Solid State Storage Co.,Ltd. Country or region before: China |