CN104571961A - Data verification backup, writing and reading method for triangle type memory device - Google Patents
Data verification backup, writing and reading method for triangle type memory device Download PDFInfo
- Publication number
- CN104571961A CN104571961A CN201410853057.6A CN201410853057A CN104571961A CN 104571961 A CN104571961 A CN 104571961A CN 201410853057 A CN201410853057 A CN 201410853057A CN 104571961 A CN104571961 A CN 104571961A
- Authority
- CN
- China
- Prior art keywords
- flash memories
- data
- read
- ferroelectric memory
- real time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
The invention discloses a data verification backup, writing and reading method for a triangle type memory device. The triangle type memory device comprises a ferroelectric memory, a first flash memory and a second flash memory. The data memory backup method comprises the steps of reading data in the ferroelectric memory; verifying the data; backing up to the first flash memory and the second flash memory after successfully verifying. The data writing method comprises the steps of reading bad block areas of the first flash memory and the second flash memory from the ferroelectric memory; respectively writing real-time data into block areas outside the bad block areas of the first flash memory and the second flash memory. The data reading method comprises the steps of reading real-time data of the first flash memory; verifying; returning after failing in verification; continuously reading and verifying until the failure times reach the preset times; reading the real-time data stored in the second flash memory. With the adoption of the data verification backup, writing and reading method for the triangle type memory device, the safety and accuracy of the data can be improved.
Description
Technical field
The invention belongs to data processing field, specifically, relate to a kind of data check backup of trigonometric expression memory storage, write and read method.
Background technology
Record terminal the class hour that driving school installs for recording the whole process of coach trainee, and in log file most importantly class hour record (record student learn car start to terminate between record), therefore to its store security need meet the standard of zero tolerance; But owing to recording installing terminal equipment class hour on driving school's vehicle, need to use vehicle accumulator to power, so stable voltage can not be ensured, particularly during vehicle sparking, the fluctuation of its electric current and voltage is quite large, to such an extent as to electric wave impact is produced to this class hour record terminal device, upset the stability of class hour record terminal device reading and writing data, digital independent or written information may be made to make mistakes.Generally can adopt the way head it off of data backup restoration; but due to erasable number of times restriction (being generally restricted to 100,000 times) of Flash memory storage (being also flash memories); can not carry out erasable frequently to flash memories; even if so final data can back up; but process data still can not get timely protection; cause partial data to be lost, cause training time last time to waste.
Summary of the invention
For solving above-mentioned prior art Problems existing, the invention provides a kind of data check backup of trigonometric expression memory storage, write and read method, this trigonometric expression memory storage is fully in conjunction with the Large Copacity feature of flash memories and the not limited feature of the erasable number of times of ferroelectric memory, achieve the verification backup of data, write and read, utilizing the mutual verification between ferroelectric memory and the first flash memories, the second flash memories three can improve security and the accuracy of data simultaneously.
In order to reach foregoing invention object, present invention employs following technical scheme:
A kind of data check backup method of trigonometric expression memory storage, described trigonometric expression memory storage comprises ferroelectric memory, the first flash memories and the second flash memories, wherein, described data check backup method comprises step: the data stored in A, reading ferroelectric memory; B, the data read to be verified; If C verification succeeds, then by described data backup to the first flash memories that reads and the second flash memories.
Further, described data check backup method also comprises step: if D verifies unsuccessfully, then utilize described first flash memories to recover described ferroelectric memory; The data stored in E, again reading ferroelectric memory; F, the data again read to be verified again; If G is verification succeeds again, then by described data backup to the first flash memories that again reads and the second flash memories.
Further, described data check backup method also comprises step: if H verifies failure again, then utilize described second flash memories to recover described ferroelectric memory; I, third time read the data stored in ferroelectric memory; J, data backup to the first flash memories that described third time is read and the second flash memories.
Another object of the present invention is to the method for writing data providing a kind of trigonometric expression memory storage, described trigonometric expression memory storage comprises ferroelectric memory, the first flash memories and the second flash memories, wherein, described method for writing data comprises step: A, from ferroelectric memory, obtain the bad block region of the first flash memories; B, real time data is write the block region except bad block region of described first flash memories; D, from ferroelectric memory, obtain the bad block region of the second flash memories; E, real time data is write the block region except bad block region of described second flash memories.
Further, before carrying out step D, described method for writing data also comprises step: C, generate the first new ferroelectric index, and by described the first ferroelectric index stores newly in ferroelectric memory according to the real time data of described first flash memories of write.
Further, described method for writing data also comprises step: F, generate the second new ferroelectric index, and by described the second ferroelectric index stores newly in ferroelectric memory according to the real time data of described second flash memories of write.
Another object of the present invention is to the method for reading data providing a kind of trigonometric expression memory storage, described trigonometric expression memory storage comprises ferroelectric memory, the first flash memories and the second flash memories, wherein, described method for reading data comprises step: A, read the real time data stored in the first flash memories; B, the real time data read from the first flash memories to be verified; If C verifies unsuccessfully, then return steps A; If D verifies the frequency of failure reach pre-determined number, then read the real time data stored in the second flash memories.
Further, described pre-determined number is three times.
The data check that another object of the present invention also there are provided a kind of trigonometric expression memory storage backs up, writes and read method, described trigonometric expression memory storage comprises ferroelectric memory, the first flash memories and the second flash memories, wherein, described data check backup, write and read method comprise step: the raw data stored in A, reading ferroelectric memory; B, the raw data read to be verified; If C verification succeeds, then the described raw data read is backed up to the first flash memories and the second flash memories; D, from ferroelectric memory, obtain the bad block region of the first flash memories; E, real time data is write the block region except bad block region of described first flash memories; F, from ferroelectric memory, obtain the bad block region of the second flash memories; G, real time data is write the block region except bad block region of described second flash memories; H, read the real time data stored in the first flash memories; I, the real time data read from the first flash memories to be verified; If J verifies unsuccessfully, then return step H; If K verifies the frequency of failure reach pre-determined number, then read the real time data stored in the second flash memories.
Further, described pre-determined number is three times.
The present invention is by forming triangle cross-check by ferroelectric memory and the first flash memories, the second flash memories, flash memories is compared to existing technology for the shortcoming of easy loss storing data, and the data check backup of this trigonometric expression memory storage, write and read method can improve security and the accuracy of data in this trigonometric expression memory storage.
Accompanying drawing explanation
The following description carried out in conjunction with the drawings, the above-mentioned and other side of embodiments of the invention, feature and advantage will become clearly, in accompanying drawing:
Fig. 1 is a kind of according to an embodiment of the invention structural drawing of trigonometric expression memory storage;
Fig. 2 is a kind of according to an embodiment of the invention flow chart of steps of data check backup method of trigonometric expression memory storage;
Fig. 3 is a kind of according to an embodiment of the invention flow chart of steps of method for writing data of trigonometric expression memory storage;
Fig. 4 is a kind of according to an embodiment of the invention flow chart of steps of method for reading data of trigonometric expression memory storage;
Fig. 5 is a kind of according to an embodiment of the invention data check backup of trigonometric expression memory storage, write and the flow chart of steps of read method.
Embodiment
Below, embodiments of the invention are described in detail with reference to the accompanying drawings.But, the present invention can be implemented in many different forms, and the present invention should not be interpreted as being limited to the specific embodiment of setting forth here.On the contrary, provide these embodiments to be to explain principle of the present invention and practical application thereof, thus enable others skilled in the art understand various embodiment of the present invention and be suitable for the various amendments of certain expected application.
Fig. 1 is a kind of according to an embodiment of the invention structural drawing of trigonometric expression memory storage, and Fig. 2 is a kind of according to an embodiment of the invention flow chart of steps of data check backup method of trigonometric expression memory storage.
With reference to Fig. 1, a kind of according to an embodiment of the invention trigonometric expression memory storage comprises: ferroelectric memory 10, first flash memories 20 and the second flash memories 30, wherein the first flash memories 20 and the second flash memories 30 are all for backing up the data in ferroelectric memory 10, and the real time data stored in training process, and the first flash memories 20 is identical with the data stored in the second flash memories 30.
The data check backup method of above-mentioned trigonometric expression memory storage is as described below.
With reference to Fig. 2, a kind of according to an embodiment of the invention data check backup method of trigonometric expression memory storage comprises the steps:
In step 110, the data that ferroelectric memory 10 stores are read.
In the step 120, the data read from ferroelectric memory 10 are verified.
In step 130, if step 120 verification succeeds, then by data backup to the first flash memories 20 that reads from ferroelectric memory 10 and the second flash memories 30.
Particularly, if step 120 verifies failure, the first flash memories 20 pairs of ferroelectric memorys 10 are then utilized to recover, and again read the data stored in ferroelectric memory 10, if verification succeeds again, then by data backup to the first flash memories 20 that again reads from ferroelectric memory 10 and the second flash memories 30; If again verify failure, the second flash memories 30 pairs of ferroelectric memorys 10 are then utilized to recover, and the data stored in third time reading ferroelectric memory 10, data backup to the first flash memories 20 that third time is read from ferroelectric memory 10 and the second flash memories 30; That is, third time reads the data stored in the ferroelectric memory 10 after utilizing the second flash memories 30 pairs of ferroelectric memorys 10 to recover, can verification succeeds.
The above-mentioned concrete grammar utilizing the first flash memories 20 pairs of ferroelectric memorys 10 to recover is: the Backup Data reading ferroelectric memory 10 from the first flash memories 20, then by this Backup Data write ferroelectric memory 10; The method that second flash memories 30 pairs ferroelectric memory 10 recovers and the method that the first flash memories 20 pairs of ferroelectric memorys 10 recover similar, do not repeat them here.
In other words the operation of above-mentioned steps 130 is, if through the functional check failure of step 120, the first flash memories 20 and the second flash memories 30 pairs of ferroelectric memorys 10 are then utilized to recover successively respectively, and again read the data stored in ferroelectric memory 10, and after verification succeeds, by data backup to the first flash memories 20 that again reads from ferroelectric memory 10 and the second flash memories 30.
Preferably, the verification operation in above-mentioned steps 120,130 adopts the superfluous heavy check code of circulation (CRC 16) to verify.CRC is a kind of error check code the most frequently used in data communication field, it is characterized in that the length of information field and check field can be selected arbitrarily; Cyclical Redundancy Check is a kind of data transmission error-detecting function, and carry out polynomial computation to data, and be attached to after frame by the result obtained, receiving equipment also performs similar algorithm, to ensure the correctness that data are transmitted and integrality.
The method for writing data of above-mentioned trigonometric expression memory storage is as described below.
Fig. 3 is a kind of according to an embodiment of the invention flow chart of steps of method for writing data of trigonometric expression memory storage.
With reference to Fig. 3, a kind of according to an embodiment of the invention method for writing data of trigonometric expression memory storage comprises the steps:
In step 210, from ferroelectric memory 10, obtain the bad block region of the first flash memories 20, and real time data is write the block region except bad block region of the first flash memories 20.
In a step 220, generate the first new ferroelectric index according to the real time data of write first flash memories 20, and by the new first ferroelectric index stores at ferroelectric memory 10.
In step 230, from ferroelectric memory 10, obtain the bad block region of the second flash memories 30, and real time data is write the block region except bad block region of the second flash memories 30.
In step 240, generate the second new ferroelectric index according to the real time data of write second flash memories 30, and by the new second ferroelectric index stores at ferroelectric memory 10.
That is, a kind of according to an embodiment of the invention method for writing data of trigonometric expression memory storage is store the write that real time data is carried out in the block region except bad block region of the first flash memories 20 and the second flash memories 30 successively respectively, and the real time data stored according to write respectively generates new ferroelectric index, and be saved in ferroelectric memory 10.
It should be noted that, in above-mentioned steps 210 and 230, first the bad block region obtaining the first flash memories 20 and the second flash memories 30 from ferroelectric memory 10 operates the bad block region in the first flash memories 20 and the second flash memories 30 to prevent, and real time data should be written in the spendable region of the first flash memories 20 and the second flash memories 30, the block region namely except bad block region.
The method for reading data of above-mentioned trigonometric expression memory storage is as described below.
Fig. 4 is a kind of according to an embodiment of the invention flow chart of steps of method for reading data of trigonometric expression memory storage.
With reference to Fig. 4, a kind of according to an embodiment of the invention method for reading data of trigonometric expression memory storage comprises the steps:
In the step 310, read the real time data stored in the first flash memories 20, and the real time data read from the first flash memories 20 is verified.
In step 320, if step 310 verifies failure, then return step step 310 and re-start reading verification.
In a step 330, if step 310 verifies the frequency of failure reach pre-determined number, then read the real time data stored in the second flash memories 30.Particularly, above-mentioned pre-determined number is three times.
The invention also discloses a kind of data backup memory of trigonometric expression memory storage, write and read method, this data backup memory, write and read method are as described below.
Fig. 5 is a kind of according to an embodiment of the invention data check backup of trigonometric expression memory storage, write and the flow chart of steps of read method.
With reference to Fig. 5, a kind of according to an embodiment of the invention data check of trigonometric expression memory storage backs up, write and read method comprises the steps:
In step 410, read the raw data stored in ferroelectric memory 10, and the raw data read is verified.
At step 420 which, if verification succeeds, then the raw data read is backed up to the first flash memories 20 and the second flash memories 30.
Particularly, if verify unsuccessfully, the first flash memories 20 and the second flash memories 30 pairs of ferroelectric memorys 10 are then utilized to recover successively respectively, and again read the raw data stored in ferroelectric memory 10, and after verification succeeds, the raw data again read from ferroelectric memory 10 is backed up in the first flash memories 20 and the second flash memories 30.Usually, verification number of times is no more than three times can be successful, that is, can be first time read ferroelectric memory 10 verification succeeds; Or after the first flash memories 20 pairs of ferroelectric memorys 10 once recover, second time reads ferroelectric memory 10 verification succeeds; Or after the second flash memories 30 pairs of ferroelectric memorys 10 carry out secondary recovery, third time reads ferroelectric memory 10 verification succeeds.
In step 430, from ferroelectric memory 10, obtain the bad block region of the first flash memories 20, and real time data is write the block region except bad block region of the first flash memories 20.
In step 440, from ferroelectric memory 10, obtain the bad block region of the second flash memories 30, and real time data is write the block region except bad block region of the second flash memories 30.
The operation of above-mentioned steps 430-440, in other words, namely the bad block region of the first flash memories 20 and the second flash memories 30 is obtained respectively from ferroelectric memory 10, and real time data write respectively in the block region except bad block region of the first flash memories 20 and the second flash memories 30, and write the first flash memories 20 is all identical with the real time data of the second flash memories 30.
In step 450, read the real time data stored in the first flash memories 20, and the real time data read from the first flash memories 20 is verified.
In step 460, if step 450 verifies failure, then return step 450 and re-start reading verification.
In step 470, if step 450 verifies the frequency of failure reach pre-determined number, then read the real time data stored in the second flash memories 30.Usually, this verification predetermined number of failed is three times.
Ferroelectric memory in this trigonometric expression memory storage and the first flash memories, the second flash memories is all utilized according to the data backup memory method of a kind of trigonometric expression memory storage of the present invention, method for writing data and method for reading data, take full advantage of unrestricted and the first flash memories of the erasable number of times of ferroelectric memory, feature that the second flash memories internal memory is large, make between three, to form verification mutually thus improve the security and accuracy that store data.
Although illustrate and describe the present invention with reference to specific embodiment, but it should be appreciated by those skilled in the art that: when not departing from the spirit and scope of the present invention by claim and equivalents thereof, the various changes in form and details can be carried out at this.
Claims (10)
1. a data check backup method for trigonometric expression memory storage, is characterized in that, described trigonometric expression memory storage comprises ferroelectric memory, the first flash memories and the second flash memories, and wherein, described data check backup method comprises step:
The data stored in A, reading ferroelectric memory;
B, the data read to be verified;
If C verification succeeds, then by described data backup to the first flash memories that reads and the second flash memories.
2. data check backup method according to claim 1, is characterized in that, described data check backup method also comprises step:
If D verifies unsuccessfully, then described first flash memories is utilized to recover described ferroelectric memory;
The data stored in E, again reading ferroelectric memory;
F, the data again read to be verified again;
If G is verification succeeds again, then by described data backup to the first flash memories that again reads and the second flash memories.
3. data check backup method according to claim 2, is characterized in that, described data check backup method also comprises step:
If H verifies failure again, then described second flash memories is utilized to recover described ferroelectric memory;
I, third time read the data stored in ferroelectric memory;
J, data backup to the first flash memories that described third time is read and the second flash memories.
4. a method for writing data for trigonometric expression memory storage, is characterized in that, described trigonometric expression memory storage comprises ferroelectric memory, the first flash memories and the second flash memories, and wherein, described method for writing data comprises step:
A, from ferroelectric memory, obtain the bad block region of the first flash memories;
B, real time data is write the block region except bad block region of described first flash memories;
D, from ferroelectric memory, obtain the bad block region of the second flash memories;
E, real time data is write the block region except bad block region of described second flash memories.
5. method for writing data according to claim 4, is characterized in that, before carrying out step D, described method for writing data also comprises step:
C, generate the first new ferroelectric index, and by described the first ferroelectric index stores newly in ferroelectric memory according to the real time data of described first flash memories of write.
6. method for writing data according to claim 4, is characterized in that, described method for writing data also comprises step:
F, generate the second new ferroelectric index, and by described the second ferroelectric index stores newly in ferroelectric memory according to the real time data of described second flash memories of write.
7. a method for reading data for trigonometric expression memory storage, is characterized in that, described trigonometric expression memory storage comprises ferroelectric memory, the first flash memories and the second flash memories, and wherein, described method for reading data comprises step:
A, read the real time data stored in the first flash memories;
B, the real time data read from the first flash memories to be verified;
If C verifies unsuccessfully, then return steps A;
If D verifies the frequency of failure reach pre-determined number, then read the real time data stored in the second flash memories.
8. method for reading data according to claim 7, is characterized in that, described pre-determined number is three times.
9. the data check of a trigonometric expression memory storage backs up, writes and read method, it is characterized in that, described trigonometric expression memory storage comprises ferroelectric memory, the first flash memories and the second flash memories, and wherein, described data check backup, write and read method comprise step:
The raw data stored in A, reading ferroelectric memory;
B, the raw data read to be verified;
If C verification succeeds, then the described raw data read is backed up to the first flash memories and the second flash memories;
D, from ferroelectric memory, obtain the bad block region of the first flash memories;
E, real time data is write the block region except bad block region of described first flash memories;
F, from ferroelectric memory, obtain the bad block region of the second flash memories;
G, real time data is write the block region except bad block region of described second flash memories;
H, read the real time data stored in the first flash memories;
I, the real time data read from the first flash memories to be verified;
If J verifies unsuccessfully, then return step H;
If K verifies the frequency of failure reach pre-determined number, then read the real time data stored in the second flash memories.
10. data check backup according to claim 9, write and read method, it is characterized in that, described pre-determined number is three times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410853057.6A CN104571961B (en) | 2014-12-31 | 2014-12-31 | Data check backup, write-in and the read method of a kind of trigonometric expression storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410853057.6A CN104571961B (en) | 2014-12-31 | 2014-12-31 | Data check backup, write-in and the read method of a kind of trigonometric expression storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104571961A true CN104571961A (en) | 2015-04-29 |
| CN104571961B CN104571961B (en) | 2018-01-09 |
Family
ID=53088146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410853057.6A Active CN104571961B (en) | 2014-12-31 | 2014-12-31 | Data check backup, write-in and the read method of a kind of trigonometric expression storage device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104571961B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105739928A (en) * | 2016-01-29 | 2016-07-06 | 山东鲁能智能技术有限公司 | Multi-region storage based parameter storage method for distribution network terminal device |
| CN107153507A (en) * | 2016-03-03 | 2017-09-12 | 北京兆易创新科技股份有限公司 | A kind of digital independent apparatus and method based on NAND Flash |
| CN107203441A (en) * | 2017-08-01 | 2017-09-26 | 常州昊云工控科技有限公司 | Double copies data storage device and its method of work, robot |
| CN108845894A (en) * | 2018-06-07 | 2018-11-20 | 广东信浓信息技术有限公司 | Data check backup, write-in and read method between a kind of multiple groups storage device |
| CN111367468A (en) * | 2018-12-26 | 2020-07-03 | 爱思开海力士有限公司 | Memory system and operating method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201387448Y (en) * | 2009-02-25 | 2010-01-20 | 青岛乾程电子科技有限公司 | Multi-functional electric energy meter with high-reliability data storage function |
| CN103389411A (en) * | 2013-07-24 | 2013-11-13 | 江苏斯菲尔电气股份有限公司 | Multifunctional watt-hour meter and electric energy data recovery method thereof |
| CN103489301A (en) * | 2013-09-25 | 2014-01-01 | 东风汽车公司 | Vehicle running information acquisition system and method using dual-processor architecture |
| US8886877B1 (en) * | 2014-05-15 | 2014-11-11 | Sandisk Technologies Inc. | In-situ block folding for nonvolatile memory |
-
2014
- 2014-12-31 CN CN201410853057.6A patent/CN104571961B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201387448Y (en) * | 2009-02-25 | 2010-01-20 | 青岛乾程电子科技有限公司 | Multi-functional electric energy meter with high-reliability data storage function |
| CN103389411A (en) * | 2013-07-24 | 2013-11-13 | 江苏斯菲尔电气股份有限公司 | Multifunctional watt-hour meter and electric energy data recovery method thereof |
| CN103489301A (en) * | 2013-09-25 | 2014-01-01 | 东风汽车公司 | Vehicle running information acquisition system and method using dual-processor architecture |
| US8886877B1 (en) * | 2014-05-15 | 2014-11-11 | Sandisk Technologies Inc. | In-situ block folding for nonvolatile memory |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105739928A (en) * | 2016-01-29 | 2016-07-06 | 山东鲁能智能技术有限公司 | Multi-region storage based parameter storage method for distribution network terminal device |
| CN107153507A (en) * | 2016-03-03 | 2017-09-12 | 北京兆易创新科技股份有限公司 | A kind of digital independent apparatus and method based on NAND Flash |
| CN107203441A (en) * | 2017-08-01 | 2017-09-26 | 常州昊云工控科技有限公司 | Double copies data storage device and its method of work, robot |
| CN108845894A (en) * | 2018-06-07 | 2018-11-20 | 广东信浓信息技术有限公司 | Data check backup, write-in and read method between a kind of multiple groups storage device |
| CN111367468A (en) * | 2018-12-26 | 2020-07-03 | 爱思开海力士有限公司 | Memory system and operating method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104571961B (en) | 2018-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104571961A (en) | Data verification backup, writing and reading method for triangle type memory device | |
| US10540289B2 (en) | Data storage device and flash memory control method | |
| US9703627B2 (en) | Error correction code unit, self-test method and associated controller applied to flash memory device for generating soft information | |
| JP5675954B2 (en) | Detection of irregular parity distribution via metadata tag | |
| CN107220097B (en) | On-orbit programming and overloading method for large-scale complex structure software | |
| CN104216791B (en) | A kind of method of verification Flash storages data | |
| US9229801B2 (en) | Method and device for write abort protection | |
| TWI512742B (en) | Non-volatile memory flash memory erase-abnormal block repair method and device applying the same | |
| CN104240768A (en) | Method for testing a memory and memory system | |
| CN103365739B (en) | A kind of NAND flash memory storage equipment and data reconstruction method thereof | |
| CN103544073A (en) | Method for reading data of block in flash memory and related memory device | |
| CN105808371A (en) | Data backup and recovery method, control chip and storage device | |
| US20170199784A1 (en) | Method of data recovery when errors failing to be corrected through ecc occur to nand flash | |
| CN104733051B (en) | Coding/decoding method, memorizer memory devices and the control circuit unit of parity check code | |
| CN110399247A (en) | A kind of data reconstruction method, device, equipment and computer readable storage medium | |
| CN104408154A (en) | Repeated data deletion method and device | |
| CN105718383A (en) | Memory System And Operating Method Thereof | |
| CN105183382A (en) | Data block protection method and device | |
| CN105304142B (en) | Coding/decoding method, memory storage apparatus and memorizer control circuit unit | |
| CN105740088A (en) | Flash data error correction method and device | |
| CN102646453A (en) | Method and system for testing error correcting code module in NandFlash controller | |
| CN105468471A (en) | Solid state storage device and error correction method thereof | |
| CN104536864A (en) | Fault injection method for Nand Flash simulation model with controllable bit flipping | |
| CN109062808A (en) | SSD development performance testing method and device and related equipment | |
| CN103914358A (en) | Flash memory rereading method and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518000 Floor 9, plant 2, Daqian industrial plant, Longchang Road, district 67, Bao'an District, Shenzhen, Guangdong Province Patentee after: Shenzhen Chengcheng Information Co.,Ltd. Address before: 518000 Floor 9, plant 2, Daqian industrial plant, Longchang Road, district 67, Bao'an District, Shenzhen, Guangdong Province Patentee before: CHAINWAY INFORMATION TECHNOLOGY Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |