CN104571961B - Data check backup, write-in and the read method of a kind of trigonometric expression storage device - Google Patents
Data check backup, write-in and the read method of a kind of trigonometric expression storage device Download PDFInfo
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Abstract
The invention discloses a kind of data backup memory, write-in and the reading method of trigonometric expression storage device, the trigonometric expression storage device includes ferroelectric memory, the first flash memories and the second flash memories, and the data backup memory method includes step：Read the data in ferroelectric memory and verified；If verifying successfully, the first flash memories and the second flash memories are backed up to.The method for writing data includes step：The bad block region of the first flash memories and the second flash memories is obtained from ferroelectric memory respectively, and real time data is write to the block region in addition to bad block region of the first flash memories and the second flash memories respectively.The method for reading data includes step：Read the real time data in the first flash memories and verified；If verification failure, return continue read verification until the frequency of failure reach pre-determined number, then read the real time data stored in the second flash memories.Data backup memory, write-in and the reading method of the trigonometric expression storage device can improve the security and accuracy of data.
Description
Technical field
The invention belongs to data processing field, specifically, be related to a kind of trigonometric expression storage device data check backup,
Write-in and read method.
Background technology
The class hour record terminal of driving school's installation is used for the whole process for recording coach trainee, and in log file most
For it is important that class hour record (record student learns the record between car start to finish), thus the security that is stored to it need it is true
It is perfectly safe to protect；But due to recording installing terminal equipment class hour on driving school's vehicle, it is necessary to be powered using vehicle accumulator, so
It cannot be guaranteed that stable voltage, particularly during vehicle is struck sparks, the fluctuation of its voltage x current is quite big, so that remembering to the class hour
Record terminal device produce electric wave impact, upset class hour record terminal device reading and writing data stability, may make digital independent or
Write information error.Can typically use the method for data backup restoration solve this problem, but due to Flash storage devices (
Be flash memories) erasable number limitation (being generally limited to 100,000 times), it is impossible to flash memories are carried out it is frequently erasable, so even if most
Whole data can back up, but process data cannot still be protected in time, cause partial data to be lost, and cause last time when training
Between waste.
The content of the invention
To solve the above-mentioned problems of the prior art, the invention provides a kind of data check of trigonometric expression storage device
Backup, write-in and read method, the trigonometric expression storage device is fully with reference to the Large Copacity feature and ferroelectric memory of flash memories
The characteristics of erasable number is unrestricted, realizes the verification backups of data, write-in and read, while utilize ferroelectric memory and first
Mutual verification between flash memories, the second flash memories three can improve the security and accuracy of data.
In order to reach foregoing invention purpose, present invention employs following technical scheme：
A kind of data check backup method of trigonometric expression storage device, the trigonometric expression storage device store including ferroelectricity
Device, the first flash memories and the second flash memories, wherein, the data check backup method includes step：A, ferroelectric memory is read
The data of middle storage；B, the data read are verified；If C, verify successfully, by the data backup read
To the first flash memories and the second flash memories.
Further, the data check backup method also includes step：If D, verification failure, utilizes described first
Flash memories are recovered to the ferroelectric memory；E, the data stored in ferroelectric memory are again read off；F, to again reading off
To data verified again；If G, verified again successfully, the data backup again read off to first is dodged
Storage and the second flash memories.
Further, the data check backup method also includes step：If H, verification failure again, described in
Second flash memories are recovered to the ferroelectric memory；I, third time reads the data stored in ferroelectric memory；J, by institute
Data backup that third time is read is stated to the first flash memories and the second flash memories.
Another object of the present invention is to provide a kind of method for writing data of trigonometric expression storage device, the trigonometric expression
Storage device includes ferroelectric memory, the first flash memories and the second flash memories, wherein, the method for writing data includes step：
A, the bad block region of the first flash memories is obtained from ferroelectric memory；B, by real time data write first flash memories except bad
Block region outside block region；D, the bad block region of the second flash memories is obtained from ferroelectric memory；E, real time data is write
The block region in addition to bad block region of second flash memories.
Further, before step D is carried out, the method for writing data also includes step：C, according to writing described the
The first ferroelectricity that the real time data generation of one flash memories is new is indexed, and new the first ferroelectricity index is stored in into ferroelectricity storage
In device.
Further, the method for writing data also includes step：F, according to the real-time number for writing second flash memories
Indexed according to the second new ferroelectricity of generation, and new the second ferroelectricity index is stored in ferroelectric memory.
Another object of the present invention is to provide a kind of method for reading data of trigonometric expression storage device, the trigonometric expression
Storage device includes ferroelectric memory, the first flash memories and the second flash memories, wherein, the method for reading data includes step：
A, the real time data stored in the first flash memories is read；B, the real time data read from the first flash memories is verified；
If C, verification failure, return to step A；If D, the verification frequency of failure reaches pre-determined number, read in the second flash memories
The real time data of storage.
Further, the pre-determined number is three times.
Another object of the present invention also resides in the data check backup for providing a kind of trigonometric expression storage device, write-in and read
Method is taken, the trigonometric expression storage device includes ferroelectric memory, the first flash memories and the second flash memories, wherein, the data
Verification backup, write-in and read method include step：A, the initial data stored in ferroelectric memory is read；B, to reading
Initial data is verified；If C, verified successfully, the initial data read is backed up into the first flash memories and
Two flash memories；D, the bad block region of the first flash memories is obtained from ferroelectric memory；E, real time data is write into described first to dodge
The block region in addition to bad block region of storage；F, the bad block region of the second flash memories is obtained from ferroelectric memory；G, will be real
When data write the block regions in addition to bad block region of second flash memories；H, stored in the first flash memories of reading real-time
Data；I, the real time data read from the first flash memories is verified；If J, verification failure, return to step H；K、
If the verification frequency of failure reaches pre-determined number, the real time data stored in the second flash memories is read.
Further, the pre-determined number is three times.
The present invention by ferroelectric memory and the first flash memories, the second flash memories by forming triangle cross-check, compared to existing
Have flash memories in technology for data storage it is easy to be lost the shortcomings that, the data check backup of the trigonometric expression storage device, write
Enter and read method can improve the security and accuracy of data in the trigonometric expression storage device.
Brief description of the drawings
The following description carried out in conjunction with the accompanying drawings, above and other aspect, feature and the advantage of embodiments of the invention
It will become clearer, in accompanying drawing：
Fig. 1 is a kind of structure chart of trigonometric expression storage device according to an embodiment of the invention；
The step of Fig. 2 is a kind of data check backup method of trigonometric expression storage device according to an embodiment of the invention is flowed
Cheng Tu；
Fig. 3 is a kind of step flow of the method for writing data of trigonometric expression storage device according to an embodiment of the invention
Figure；
Fig. 4 is a kind of step flow of the method for reading data of trigonometric expression storage device according to an embodiment of the invention
Figure；
Fig. 5 is data check backup, write-in and the reading of a kind of trigonometric expression storage device according to an embodiment of the invention
The step flow chart of method.
Embodiment
Hereinafter, with reference to the accompanying drawings to embodiments of the invention are described in detail.However, it is possible to come in many different forms real
Apply the present invention, and the specific embodiment of the invention that should not be construed as limited to illustrate here.Conversely, there is provided these implementations
Example is in order to explain the principle and its practical application of the present invention, so that others skilled in the art are it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.
Fig. 1 is a kind of structure chart of trigonometric expression storage device according to an embodiment of the invention, and Fig. 2 is according to the present invention
A kind of step flow chart of the data check backup method of trigonometric expression storage device of embodiment.
Reference picture 1, a kind of trigonometric expression storage device according to an embodiment of the invention include：Ferroelectric memory 10, first
The flash memories 30 of flash memories 20 and second, wherein the first flash memories 20 and the second flash memories 30 are used in backup ferroelectric memory 10
Data, and store the real time data in training process, and the data phase stored in the first flash memories 20 and the second flash memories 30
Together.
The data check backup method of above-mentioned trigonometric expression storage device is as described below.
Reference picture 2, a kind of data check backup method of trigonometric expression storage device according to an embodiment of the invention include
Following steps：
In step 110, the data that ferroelectric memory 10 stores are read.
In the step 120, the data read from ferroelectric memory 10 are verified.
In step 130, if step 120 verify successfully, by the data backup read from ferroelectric memory 10 to
First flash memories 20 and the second flash memories 30.
Specifically, if step 120 verification failure, is recovered using the first flash memories 20 to ferroelectric memory 10, and
The data stored in ferroelectric memory 10 are again read off, if verifying again successfully, will be read again from ferroelectric memory 10
The data backup arrived is to the first flash memories 20 and the second flash memories 30；If verification failure again, right using the second flash memories 30
Ferroelectric memory 10 is recovered, and third time reads the data stored in ferroelectric memory 10, and third time is stored from ferroelectricity
The data backup read in device 10 is to the first flash memories 20 and the second flash memories 30；That is, third time, which is read, utilizes second
Flash memories 30 ferroelectric memory 10 is recovered after ferroelectric memory 10 in the data that store, success can be verified.
The above-mentioned specific method that is recovered using the first flash memories 20 to ferroelectric memory 10 is：From the first flash memories 20
The middle Backup Data for reading ferroelectric memory 10, then writes the Backup Data in ferroelectric memory 10；Second flash memories 30
It is similar with the method that the first flash memories 20 are recovered to ferroelectric memory 10 to the method that ferroelectric memory 10 is recovered,
This is repeated no more.
In other words the operation of above-mentioned steps 130 i.e., if the functional check through step 120 fails, is utilized respectively successively
First flash memories 20 and the second flash memories 30 are recovered to ferroelectric memory 10, and again read off in ferroelectric memory 10 and store
Data, and after verifying successfully, by the data backup read again from ferroelectric memory 10 to the He of the first flash memories 20
In second flash memories 30.
Preferably, the verification operation in above-mentioned steps 120,130 carries out school using superfluous heavy check code (CRC 16) is circulated
Test.CRC is a kind of error check code the most frequently used in data communication field, it is characterized in that the length of information field and check field
Can be with arbitrarily selected；Cyclical Redundancy Check is a kind of data transfer error detection function, carries out polynomial computation to data, and will obtain
Result be attached to behind frame, receiving device also performs similar algorithm, to ensure the correctness of data transfer and integrality.
The method for writing data of above-mentioned trigonometric expression storage device is as described below.
Fig. 3 is a kind of step flow of the method for writing data of trigonometric expression storage device according to an embodiment of the invention
Figure.
Reference picture 3, a kind of method for writing data of trigonometric expression storage device according to an embodiment of the invention include as follows
Step：
In step 210, the bad block region of the first flash memories 20 is obtained from ferroelectric memory 10, and real time data is write
Enter the block region in addition to bad block region of the first flash memories 20.
In a step 220, the first new ferroelectricity is generated according to the real time data of the first flash memories 20 of write-in to index, and will be new
The first ferroelectricity index be stored in ferroelectric memory 10.
In step 230, the bad block region of the second flash memories 30 is obtained from ferroelectric memory 10, and real time data is write
Enter the block region in addition to bad block region of the second flash memories 30.
In step 240, the second new ferroelectricity is generated according to the real time data of the second flash memories 30 of write-in to index, and will be new
The second ferroelectricity index be stored in ferroelectric memory 10.
That is, a kind of method for writing data of trigonometric expression storage device according to an embodiment of the invention for respectively according to
The write-in that the secondary block region in addition to bad block region to the first flash memories 20 and the second flash memories 30 carries out real time data stores,
And new ferroelectricity is generated according to the real time data of write-in storage respectively and indexed, and be saved in ferroelectric memory 10.
It is worth noting that, in above-mentioned steps 210 and 230, the first flash memories are obtained from ferroelectric memory 10 first
20 and second the bad block regions of flash memories 30 be to prevent to the bad block region in the first flash memories 20 and the second flash memories 30
Operated, and real time data should be written in the workable region of the first flash memories 20 and the second flash memories 30, that is, remove
Block region outside bad block region.
The method for reading data of above-mentioned trigonometric expression storage device is as described below.
Fig. 4 is a kind of step flow of the method for reading data of trigonometric expression storage device according to an embodiment of the invention
Figure.
Reference picture 4, a kind of method for reading data of trigonometric expression storage device according to an embodiment of the invention include following
Step：
In the step 310, the real time data stored in the first flash memories 20 is read, and to being read from the first flash memories 20
To real time data verified.
In step 320, if step 310 verification failure, return to step step 310 re-start reading verification.
In a step 330, if the step 310 verification frequency of failure reaches pre-determined number, read in the second flash memories 30 and deposit
The real time data of storage.Specifically, above-mentioned pre-determined number is three times.
The invention also discloses a kind of data backup memory, write-in and the read method of trigonometric expression storage device, the data
Storage backup, write-in and read method are as described below.
Fig. 5 is data check backup, write-in and the reading of a kind of trigonometric expression storage device according to an embodiment of the invention
The step flow chart of method.
Reference picture 5, data check backup, write-in and the reading of a kind of trigonometric expression storage device according to an embodiment of the invention
Method is taken to comprise the following steps：
In step 410, the initial data stored in ferroelectric memory 10 is read, and the initial data to reading is carried out
Verification.
At step 420, if verifying successfully, the initial data read is backed up into the first flash memories 20 and second dodges
Storage 30.
Specifically, if verification failure, the first flash memories 20 and the second flash memories 30 are utilized respectively successively ferroelectricity is stored
Device 10 is recovered, and again reads off the initial data stored in ferroelectric memory 10, and after verifying successfully, will be again from iron
The initial data read in electrical storage 10 is backed up in the first flash memories 20 and the second flash memories 30.Usually, verification time
Number is no more than can succeed three times, that is to say, that can read ferroelectric memory 10 for the first time then to verify successfully；Or through first
After flash memories 20 are once recovered to ferroelectric memory 10, second of reading ferroelectric memory 10 then verifies successfully；Or through
After two flash memories 30 carry out secondary recovery to ferroelectric memory 10, third time reads ferroelectric memory 10 and then verified successfully.
In step 430, the bad block region of the first flash memories 20 is obtained from ferroelectric memory 10, and real time data is write
Enter the block region in addition to bad block region of the first flash memories 20.
In step 440, the bad block region of the second flash memories 30 is obtained from ferroelectric memory 10, and real time data is write
Enter the block region in addition to bad block region of the second flash memories 30.
Above-mentioned steps 430-440 operation, in other words, i.e., obtain the first flash memories 20 and the from ferroelectric memory 10 respectively
The bad block region of two flash memories 30, and remove Huai Kuai areas by what real time data was respectively written into the first flash memories 20 and the second flash memories 30
In block region outside domain, and write the real time data all same of the first flash memories 20 and the second flash memories 30.
In step 450, the real time data stored in the first flash memories 20 is read, and to being read from the first flash memories 20
To real time data verified.
In step 460, if step 450 verification failure, return to step 450 re-start reading verification.
In step 470, if the step 450 verification frequency of failure reaches pre-determined number, read in the second flash memories 30 and deposit
The real time data of storage.Usually, this verification predetermined number of failed is three times.
Read according to a kind of data backup memory method of trigonometric expression storage device of the present invention, method for writing data and data
Take method to utilize ferroelectric memory and the first flash memories, the second flash memories in the trigonometric expression storage device, take full advantage of
The erasable number of ferroelectric memory unrestrictedly and the first flash memories, the characteristics of the second flash memories internal memory is big, makes to form phase between three
Mutually verify so as to improve the security of data storage and accuracy.
Although the present invention has shown and described with reference to specific embodiment, it should be appreciated by those skilled in the art that：
In the case where not departing from the spirit and scope of the present invention limited by claim and its equivalent, can carry out herein form and
Various change in details.
Claims (4)
1. a kind of data check backup method of trigonometric expression storage device, being recorded applied to driving school's vehicle class hour in terminal, it is special
Sign is that the trigonometric expression storage device includes ferroelectric memory, the first flash memories and the second flash memories, wherein, the data
Verification backup method includes step：
A, the data stored in ferroelectric memory are read；
B, the data read are verified；
If C, verify successfully, by the data backup read to the first flash memories and the second flash memories；
If D, verification failure, is recovered using first flash memories to the ferroelectric memory；
E, the data stored in ferroelectric memory are again read off；
F, the data again read off are verified again；
If G, verify again successfully, by the data backup again read off to the first flash memories and the second flash memories；
If H, verification failure again, is recovered using second flash memories to the ferroelectric memory；
I, third time reads the data stored in ferroelectric memory；
J, by the data backup that the third time is read to the first flash memories and the second flash memories.
2. a kind of method for writing data of trigonometric expression storage device, recorded applied to driving school's vehicle class hour in terminal, its feature exists
In, the trigonometric expression storage device includes ferroelectric memory, the first flash memories and the second flash memories, wherein, the data write-in
Method includes step：
A, the bad block region of the first flash memories is obtained from ferroelectric memory；
Real time data is write to the block region in addition to bad block region of first flash memories B,；
C, the first new ferroelectricity is generated according to the real time data for writing first flash memories to index, and by the first new iron
Electricity index is stored in ferroelectric memory；
D, the bad block region of the second flash memories is obtained from ferroelectric memory；
Real time data is write to the block region in addition to bad block region of second flash memories E,；
F, the second new ferroelectricity is generated according to the real time data for writing second flash memories to index, and by the second new iron
Electricity index is stored in ferroelectric memory.
3. a kind of method for reading data of trigonometric expression storage device, recorded applied to driving school's vehicle class hour in terminal, its feature exists
In, the trigonometric expression storage device includes ferroelectric memory, the first flash memories and the second flash memories, wherein, the digital independent
Method includes step：
A, the real time data stored in the first flash memories is read；
B, the real time data read from the first flash memories is verified；
If C, verification failure, return to step A；
If D, the verification frequency of failure reaches pre-determined number three times, the real time data stored in the second flash memories is read.
4. data check backup, write-in and the read method of a kind of trigonometric expression storage device, are recorded applied to driving school's vehicle class hour
In terminal, it is characterised in that the trigonometric expression storage device includes ferroelectric memory, the first flash memories and the second flash memories, its
In, data check backup, write-in and the read method include step：
A, the initial data stored in ferroelectric memory is read；
B, the initial data read is verified；
If C, verified successfully, the initial data read is backed up into the first flash memories and the second flash memories；
D, the bad block region of the first flash memories is obtained from ferroelectric memory；
Real time data is write to the block region in addition to bad block region of first flash memories E,；
F, the bad block region of the second flash memories is obtained from ferroelectric memory；
Real time data is write to the block region in addition to bad block region of second flash memories G,；
H, the real time data stored in the first flash memories is read；
I, the real time data read from the first flash memories is verified；
If J, verification failure, return to step H；
If K, the verification frequency of failure reaches pre-determined number three times, the real time data stored in the second flash memories is read.
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| CN105739928A (en) * | 2016-01-29 | 2016-07-06 | 山东鲁能智能技术有限公司 | Multi-region storage based parameter storage method for distribution network terminal device |
| CN107153507A (en) * | 2016-03-03 | 2017-09-12 | 北京兆易创新科技股份有限公司 | A kind of digital independent apparatus and method based on NAND Flash |
| CN107203441A (en) * | 2017-08-01 | 2017-09-26 | 常州昊云工控科技有限公司 | Double copies data storage device and its method of work, robot |
| CN108845894A (en) * | 2018-06-07 | 2018-11-20 | 广东信浓信息技术有限公司 | Data check backup, write-in and read method between a kind of multiple groups storage device |
| KR20200079851A (en) * | 2018-12-26 | 2020-07-06 | 에스케이하이닉스 주식회사 | Memory system and operating method thereof |
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