CN104570282A - Silver-doped defect negative refraction photonic crystal three-flat plate group detection system - Google Patents
Silver-doped defect negative refraction photonic crystal three-flat plate group detection system Download PDFInfo
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- CN104570282A CN104570282A CN201410744254.4A CN201410744254A CN104570282A CN 104570282 A CN104570282 A CN 104570282A CN 201410744254 A CN201410744254 A CN 201410744254A CN 104570282 A CN104570282 A CN 104570282A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
- G02B13/0015—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design
- G02B13/002—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design having at least one aspherical surface
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
- G02B13/0015—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/02—Simple or compound lenses with non-spherical faces
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- Optics & Photonics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a silver-doped defect negative refraction photonic crystal three-flat plate group detection system. The system comprises upper, middle and lower parallel flat plate lenses with silver-doped defect impurities, wherein silver-doped defects on the upper and the lower flat plate lenses are in bilateral symmetry relative to central axis Y and in longitudinal symmetry relative to central axis X, the central axis Y in the top row is taken as a boundary, seventh air holes which are respectively arranged in the left direction and the right direction of the central axis X are the silver-doped defects, and in the various rows of air holes below the top row of the air holes row by row, the air holes which are sequentially dislocated outwards in the left direction and the right direction are the silver-doped defects till the air holes in the row in which the central axis X is located; the silver-doped defects on the middle flat plate lens are in bilateral symmetry relative to the central axis Y, the central axis Y in the top row is taken as the boundary, the fifth air holes which are respectively arranged in the left direction and the right direction of the central axis X are the silver-doped defects, and from the various rows of the air holes from top to bottom, the air holes which are sequentially dislocated outwards in the left direction and the right direction are the sliver-doped defects, so that the re-focusing resolution of the system is improved.
Description
Technical field
The invention belongs to optical technical field, more precisely, relate to a kind of optical technology utilizing the negative refraction of photonic crystal panel to make super lens.
Background technology
Traditional image device---lens, mainly rely on the curvature on its surface to make optical system imaging, and the resolution of ordinary lens can not reach optical wavelength rank (visible optical wavelength scope is 390nm-780nm); Gradient-index lens is that the cylindric medium radially parabolically distributed by refractive index is formed, poly-(faling apart) light or imaging two kinds effect can be played, it has the advantages that focal beam spot diameter is very little and resolution is high, is thus widely used in coupling fiber, light splitting, partial wave, photoswitch, duplicating machine miniaturization, laser-optical disk put record etc.
Left-handed materials (LHM) obtains special concern in near-field target detection and imaging, and the negative index left-handed materials flat-plate lens with flat surfaces is also suggested as condenser lens.Theoretical analysis and numerical simulation show that the focus resolution that traditional image device can break through diffraction limit compared by the lens made by left-handed materials, and have higher image resolution ratio.
Document Wang G, Fang J R, Dong X T. Refocusing of backscattered microwaves in target detection by using LHM flat lens. Opt Expr, 2007, 15 (6): 3312D3317, and document Wang G, Fang J R, Dong X T. Resolution of Near-field microwave target detection and imaging by using flat LHM lens. IEEE Trans Antennas Propog, 2007, 55 (12): 3534D3541, disclosed in be the technology that the negative refraction photonic crystal lens utilizing single nothing to mix silver-colored defect is applied in microwave sounding, refocusing resolution can be improved better, it is to diameter D=1/6
(
equal
) circular PEC (perfect electric conductor) target (i.e. target to be detected) refocusing resolution be 0.257
.Chinese Patent Application No. is 201310544501.1, name is called the detection system that " adopting the detection system of two dull and stereotyped negative refraction 2 D photon crystal composition " discloses a kind of concrete structure and comprise light source, detector, upper flat plate and lower flat board, wherein upper flat plate and lower flat board are parallel to each other, two flat boards are 2 D photon crystal material with negative refractive index and form, by making in the cylindrical air hole of GaAs medium substrate etching triangular crystal lattice arrangement.Mix a few defect, further increase refocusing resolution than single flawless negative refraction photonic crystal lens, refocusing resolution reaches 0.165
(
equal
), but its longitudinal probing in Y-axis is apart from little, and refocusing resolution is still little.
Summary of the invention
The longitudinal probing Distance geometry that the object of the invention is to strengthen lens combination further improves refocusing resolution further, proposes one and mixes silver-colored defect negative refraction photonic crystal three flat board group detection system.
For achieving the above object, the technical solution used in the present invention is: the light source and the detector that the present invention includes position coincidence, put above light source with detector three pieces, upper, middle and lower parallel, by air insulated, have the equivalent negative refract photons crystal plate lens mixing silver-colored defect impurity, every block flat-plate lens is all form in the cylindrical air hole of triangle arrangement by etching in GaAs medium substrate; The arrangement architecture mixing silver-colored defect on upper and lower flat-plate lens is identical, all symmetrical with central shaft Y, symmetrical up and down with central shaft X, all go up most a row with central shaft Y for boundary, 7th airport of the centrally left and right direction arrangement of axle X is for mixing silver-colored defect respectively, from going up most an emptying pore in turn downward each emptying pore, an airport in turn outwards misplace again in left and right direction for mixing silver-colored defect, till this emptying pore at central shaft X place; On central flat lens to mix silver-colored defect symmetrical with central shaft Y, go up most a row with central shaft Y for boundary, 5th airport of the centrally left and right direction arrangement of axle X is for mixing silver-colored defect respectively, in each emptying pore from top to bottom, the left and right airport that misplaces outward is successively for mixing silver-colored defect.
The beneficial effect that the present invention has after adopting technique scheme is:
1, the present invention is according to mixing metal ion defects, the impurity state that quality factor is very high is there will be in forbidden photon band, the principle that spontaneous radiation strengthens can also be realized, adopt by three pieces of parallel NR-PC(Negative Refractive-Photonic Crystal, equivalent negative refract photons crystal) flat-plate lens composition detection imaging system, argent (Ag) defect impurity is mixed in negative refraction photonic crystal, regulate the position of doping, structure, further increase the refocusing resolution of system, thus can realize " perfect imaging " microtexture, realize optimum combination.
2, the present invention adopts three blocks of plates to strengthen the longitudinal probing distance of lens combination further, improves light wave in the transmissivity of flat board, compensates the multipath reflection that occurs at air and the dull and stereotyped surface of contact of NR-PC and reflects the electromagnetic wave loss caused.Due to micro-forbidden band and resonance excitation effect, light wave is after NR-PC flat board, very strong light-wave transmission peak is there will be at resonant frequency place, the all the components (transmission wave and evanescent wave) of light field can participate in imaging without loss, thus can break through diffraction limit and realize sub-focusing resolution imaging, greatly improve refocusing transversal scanning resolution and the image resolution ratio of target backward scattered wave.
3, defective photonic crystal system has the characteristic to wavefield energy localization, and can realize stronger stimulated radiation and amplify, absorption loss is then effectively reduced by resonance tunneling effect.In the present invention, doping metals Defect Photonic Crystal structure can increase the phenomenon of transmission, simultaneously, NR-PC flat-plate lens amplifies owing to can carry out focusing to wave field as ordinary lens, when above-mentioned effect compensate for loss one deck doping of light propagation in the photonic crystal further, only there is a central defect mould.When double doping layer and three layers of doping except all there is central defect mould, also two symmetric defects moulds are there are in the both sides of central defect mould.The halfwidth of central defect mould reduces with the increase of the doping number of plies; The peak height of symmetric defects mould and halfwidth all reduce with the increase of the doping number of plies; The position of symmetric defects mould is moved to central defect mould with the increase of the doping number of plies.Therefore, mix suitable argent defect, then the NR-PC tri-flat-plate lens group of optimal combination drastically increases lateral resolution and the distance of measured target.Meanwhile, compare by repeatedly regulating the emulation experiment of position distribution and crystalline network of mixing silver-colored defect and draw: under flat hexagon shape, trapezoidal shape distribution situation, best resolution can be reached.
4, resolution of the present invention reaches 0.16472, and (refocusing resolution: 0.3612), refocusing resolution improves 0.19648 not mix silver-colored defect with three plates.With utilize LHM flat-plate lens to carry out dynamic scan to formed objects target to detect the refocusing resolution obtained (refocusing resolution: improve 0.09228 0.257), with veneer without mixing silver-colored defect (refocusing resolution: improve 0.09168 0.2564) disclosed in part document of two in background technology.Illustrate and in NR-PC tri-flat-plate lens group, mix argent defect and by different combinations, best resolution can be reached, significantly improve the scanning ability to target and distance, mix silver-colored defect sturcture than veneer simultaneously and compare and also increase, thus optimize the performance of detection imaging system.
Accompanying drawing explanation
Fig. 1 is the structural representation mixing silver-colored defect negative refraction photonic crystal three flat board group detection system of the present invention;
In figure: 1. underlying structure; 2. mix silver-colored defect; 3. the detection of a target; 4. light source; 5. detector.
Embodiment
See Fig. 1, the whole detection system of the present invention is by the parallel NR-PC(equivalent negative refract photons crystal mixing silver-colored defect impurity in light source 4, detector 5 and three pieces, upper, middle and lower) flat-plate lens forms, and three pieces of flat-plate lens constitute photonic crystal three flat-plate lens group.By air insulated between three flat-plate lens, the air insulated between adjacent two pieces of flat-plate lens, apart from identical, is all d.Wherein, the silver-colored defect arrangement architecture of upper and lower flat-plate lens A, C is identical, slightly different in upper and lower central flat lens B structure between two pieces of flat-plate lens A, C.With the structure of Fig. 1 for one-period unit, photonic crystal three flat-plate lens group is extended arbitrarily to x direction (length direction) left and right, forms a detection imaging system.The aimed dia of the detection of a target 3 is
d=1/6
, be positioned over the upper surface 2 μm place of distance upper flat plate lens A.Light source 4 is positioned at the below of lower flat-plate lens C, the light wave centre frequency that light source 4 is launched be 0.3068 (
a/
), be placed on the lower surface 3.5 μm place apart from lower flat-plate lens C, detector 5 overlaps with light source 4 position, and the vertical range between the lower surface of detector 5 and lower flat-plate lens C is also 3.5 μm.
The underlying structure 1 of every block flat-plate lens A, B, C, be all form in the cylindrical air hole of GaAs medium substrate etching in triangle arrangement, the be arranged as Y-direction (Width) 7 of airport under GaAs medium substrate is arranged, and X-direction gets 30 row, as shown in Figure 1.Wherein, the relative dielectric constant of GaAs medium substrate is
=12.96, the grating constant of the radius of airport to be 0.4a, a be 2 D photon crystal.
Upper flat plate lens A is identical with the arranged distribution of mixing silver-colored defect on lower flat-plate lens C.Above flat-plate lens A is example: mixing silver-colored defect 2 at XY coordinate plane is flat hexagon shape, and what is called is mixed silver-colored defect 2 and namely mixed silver-colored molecular material in the partial air hole of GaAs medium substrate etching.Upper flat plate lens A goes up a row most with the central shaft Y of Y-direction for boundary, 7th airport of the centrally left and right direction arrangement of axle X is for mixing silver-colored defect 2 respectively, from going up most a row in turn downwards each row, an airport in turn outwards misplace again in left and right direction for mixing silver-colored defect 2, center O(initial point O until upper flat plate lens A) till this row of place, or this row at central shaft x place is boundary.From O place, center, this arranges the beginning in turn downwards each row, and each row in turn inwardly misplaces an airport for mixing silver-colored defect 2.Mix silver-colored defect 2 from top to bottom gradually away from central shaft Y above the O of center in each row, and mix silver-colored defect 2 from top to bottom gradually near near central shaft Y below the O of center in each row.Therefore, on upper flat plate lens A and lower flat-plate lens C to mix silver-colored defect 2 each symmetrical with central shaft Y, respectively symmetrical up and down with central shaft X.So, make upper flat plate lens A and lower flat-plate lens C mixes silver-colored defect 2 at XY coordinate plane all in flat hexagon shape.
The arrangement of mixing silver-colored defect 2 of central flat lens B is: central flat lens B goes up a row most with central shaft Y for boundary, 5th airport of the centrally left and right directions arrangement of axle x is for mixing silver-colored defect 2 respectively, in each emptying pore from top to bottom, the left and right airport that misplaces outward is successively for mixing silver-colored defect 2.Namely on central flat lens B to mix silver-colored defect 2 symmetrical with central shaft Y, and from top to bottom gradually away from central shaft Y, so, make the silver-colored defect 2 of mixing on central flat lens B be trapezoidal shape distribution at XY coordinate plane.
After the silver-colored defect of the present invention's doping metals in NR-PC flat-plate lens group, adopt NR-PC tri-flat-plate lens group dynamic scan scheme, when keeping target constant, light source 4 and both detectors 5 is taked to combine synchronizing moving, the refocusing transversal scanning resolution of target backward scattered wave and image resolution ratio can obtain larger raising, improve the performance of detection imaging system better.
Claims (5)
1. mix silver-colored defect negative refraction photonic crystal three flat board group detection system for one kind, comprise light source and the detector of position coincidence, it is characterized in that: put above light source with detector three pieces, upper, middle and lower parallel, by air insulated, have the equivalent negative refract photons crystal plate lens mixing silver-colored defect impurity, every block flat-plate lens is all form in the cylindrical air hole of triangle arrangement by etching in GaAs medium substrate; The arrangement architecture mixing silver-colored defect on upper and lower flat-plate lens is identical, all symmetrical with central shaft Y, symmetrical up and down with central shaft X, all go up most a row with central shaft Y for boundary, 7th airport of the centrally left and right direction arrangement of axle X is for mixing silver-colored defect respectively, from going up most an emptying pore in turn downward each emptying pore, an airport in turn outwards misplace again in left and right direction for mixing silver-colored defect, till this emptying pore at central shaft X place; On central flat lens to mix silver-colored defect symmetrical with central shaft Y, go up most a row with central shaft Y for boundary, 5th airport of the centrally left and right direction arrangement of axle X is for mixing silver-colored defect respectively, in each emptying pore from top to bottom, the left and right airport that misplaces outward is successively for mixing silver-colored defect.
2. mix silver-colored defect negative refraction photonic crystal three flat board group detection system according to claim 1, it is characterized in that: put the detection of a target in upper surface 2 μm of disposal of upper flat plate lens, aimed dia is
d=1/6
,
equal
; Light source and detector are positioned at the lower surface 3.5 μm place of lower flat-plate lens, and the light wave centre frequency that light source is launched is 0.3068.
3. mix silver-colored defect negative refraction photonic crystal three flat board group detection system according to claim 1, it is characterized in that: the be arranged as Y-direction 7 of airport under GaAs medium substrate is arranged, X-direction 30 arranges, the grating constant of the radius of airport to be 0.4a, a be 2 D photon crystal.
4. mix silver-colored defect negative refraction photonic crystal three flat board group detection system according to claim 1, it is characterized in that: the relative dielectric constant of GaAs medium substrate is
=12.96.
5. mix silver-colored defect negative refraction photonic crystal three flat board group detection system according to claim 1, it is characterized in that: the air insulated between adjacent two pieces of flat-plate lens is apart from identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410744254.4A CN104570282B (en) | 2014-12-09 | 2014-12-09 | Silver-doped defect negative refraction photonic crystal three-flat plate group detection system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410744254.4A CN104570282B (en) | 2014-12-09 | 2014-12-09 | Silver-doped defect negative refraction photonic crystal three-flat plate group detection system |
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| Publication Number | Publication Date |
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| CN104570282A true CN104570282A (en) | 2015-04-29 |
| CN104570282B CN104570282B (en) | 2017-05-03 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1740907A (en) * | 2004-08-24 | 2006-03-01 | 盟图科技股份有限公司 | Structure for improving optical mask resolution ratio utilizing photon crystal |
| JP2007279084A (en) * | 2006-04-03 | 2007-10-25 | Nikon Corp | Wavelength conversion optical system, laser light source, exposure device, inspection object inspecting device, and processing device for polymer crystal |
| US20080291808A1 (en) * | 2007-05-25 | 2008-11-27 | Funai Electric Co., Ltd. | Optical pickup device |
| CN103630999A (en) * | 2013-11-06 | 2014-03-12 | 江苏大学 | NC-PC (Negative Refraction Photonic Crystal) double-panel lens system capable of increasing refocusing resolution ratio |
-
2014
- 2014-12-09 CN CN201410744254.4A patent/CN104570282B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1740907A (en) * | 2004-08-24 | 2006-03-01 | 盟图科技股份有限公司 | Structure for improving optical mask resolution ratio utilizing photon crystal |
| JP2007279084A (en) * | 2006-04-03 | 2007-10-25 | Nikon Corp | Wavelength conversion optical system, laser light source, exposure device, inspection object inspecting device, and processing device for polymer crystal |
| US20080291808A1 (en) * | 2007-05-25 | 2008-11-27 | Funai Electric Co., Ltd. | Optical pickup device |
| CN103630999A (en) * | 2013-11-06 | 2014-03-12 | 江苏大学 | NC-PC (Negative Refraction Photonic Crystal) double-panel lens system capable of increasing refocusing resolution ratio |
Non-Patent Citations (1)
| Title |
|---|
| TINGGEN SHEN.ETC: "《Image resolution and the properties of optical-wave target detection and imaging by using the NR-PC flat lens》", 《OPTIK》 * |
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Granted publication date: 20170503 Termination date: 20171209 |