CN104569557A - Rail-to-rail peak detection circuit and method - Google Patents
Rail-to-rail peak detection circuit and method Download PDFInfo
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- CN104569557A CN104569557A CN201410114797.8A CN201410114797A CN104569557A CN 104569557 A CN104569557 A CN 104569557A CN 201410114797 A CN201410114797 A CN 201410114797A CN 104569557 A CN104569557 A CN 104569557A
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Abstract
The invention discloses a rail-to-rail peak detection circuit and method. The method comprises the following steps: when input voltage is increased, the grid electrode of a first transistor is increased, and the drain current difference of the first transistor and a third transistor flows to a fifth transistor; the current difference of a sixth transistor and the fifth transistor is mirrored; a capacitor is continuously charged by the mirrored current difference; the charging of the capacitor is stopped until output voltage is equal to the input voltage; when the input voltage is reduced, the capacitor keeps the highest input voltage, and the highest voltage is indicated as peak forward voltage. When the transistors are conducted, the voltage difference of the transistors is far lower than that of diodes, so that output can reach voltage of a power supply, a real input peak value is output, and the voltage of the power supply can be reached, namely rail-to-rail output can be realized; the drain current difference is generated by the effects of the transistors and mirrored by a current mirror, so that integration is facilitated and accurate peak detection is realized.
Description
Technical field
The present invention relates to a kind of peak-value detection method, particularly relate to a kind of rail-to-rail peak detection circuit and method thereof.
Background technology
At present, peak-value detection method conventional on the market mainly contains two kinds, and the first is as shown in Figure 5, the one-way conduction of diode is adopted to realize peakvalue's checking, the method is simple, but exporting peak value exports difference diode drop with actual, and output is not real input peak value; The second is as shown in Figure 6, adopts amplifier+diode, when input signal is less than diode drop than power supply, complete input signal peak value can be detected at output terminal.But when input signal increases further, due to the forward pressure reduction of diode, then cannot reappear input signal peak value again and method cannot realize rail-to-rail peakvalue's checking in output.
Therefore, a kind of novel peak-value detection method is badly in need of on the market to overcome existing defect.
Summary of the invention
For the weak point existed in above-mentioned technology, the invention provides a kind of Stability Analysis of Structures, facilitate easy-to-use, that use is flexible and sealing is strong rail-to-rail peak detection circuit and method thereof.
For achieving the above object, the invention provides a kind of rail-to-rail peak detection circuit, comprise the discharge circuit be made up of the first transistor, transistor seconds, third transistor and the 4th transistor, the current mirroring circuit be made up of the 5th transistor and the 6th transistor and electric capacity, the grid of described the first transistor receives input signal, the common end grounding that the source electrode of the first transistor and the source electrode of transistor seconds are formed, the drain electrode of described the first transistor is electrically connected with the drain electrode of third transistor, the common port that the grid of third transistor and the grid of the 4th transistor are formed is by current source ground connection, the drain electrode of the 4th transistor is electrically connected to the drain electrode of transistor seconds, the grid of described transistor seconds is electrically connected to one end of electric capacity, the drain electrode of the common port that the grid of described 5th transistor and the 6th transistor are formed and the 5th transistor is electrically connected to the common port that the first transistor and third transistor are formed respectively, the drain electrode of described 6th transistor is electrically connected with the other end of electric capacity and charges to electric capacity, the other end ground connection of described electric capacity, described third transistor, 4th transistor, the source electrode of the 5th transistor and the 6th transistor is contacted successively and is connect,
Wherein, described transistor is triode or metal-oxide-semiconductor.
For achieving the above object, the invention provides a kind of rail-to-rail peak-value detection method, comprise the following steps:
When input voltage increases, the grid voltage of the first transistor increases thereupon, then the drain current difference of the first transistor and third transistor flows to the 5th transistor;
Mirror image is carried out by the difference between current of the 6th transistor to the 5th transistor;
Carried out continuing charging to electric capacity by the difference between current after mirror image;
Until when output voltage equals input voltage, electric capacity stops charging;
When the output voltage drops, electric capacity keeps the ceiling voltage of input, and this ceiling voltage is designated as peak forward voltage.
For achieving the above object, the invention provides also a kind of rail-to-rail peak detection circuit, comprise the discharge circuit be made up of the first transistor, transistor seconds, third transistor and the 4th transistor, the current mirroring circuit be made up of the 5th transistor and the 6th transistor and electric capacity, the grid of described the first transistor receives input signal, the common port that the source electrode of source electrode and transistor seconds that one end of electric capacity is connected to the first transistor by current source is formed, the drain electrode of the first transistor is electrically connected with the drain electrode of third transistor, the drain electrode of the common port that the grid of third transistor and the grid of the 4th transistor are formed and the 4th transistor is electrically connected to the drain electrode of transistor seconds respectively, the grid of described transistor seconds is electrically connected to the other end of electric capacity, the drain electrode of the common port that the grid of described 5th transistor and the 6th transistor are formed and the 5th transistor is electrically connected to the common port that the first transistor and third transistor are formed respectively, the drain electrode of described 6th transistor is electrically connected with the other end of electric capacity and charges to electric capacity, described third transistor, 4th transistor, the source grounding of the 5th transistor and the 6th transistor,
When input voltage reduces, the grid voltage of the first transistor reduces thereupon, then the drain current difference of the first transistor and third transistor flows to the 5th transistor, and carry out mirror image by the difference between current of the 6th transistor to the 5th transistor, by the difference between current after mirror image, continuous discharge is carried out to electric capacity, until when output voltage equals input voltage, electric capacity stops electric discharge; When input voltage rises, electric capacity keeps the minimum voltage of input end, and this most high-low voltage is designated as negative peak voltage.
Wherein, described transistor is triode or metal-oxide-semiconductor.
For achieving the above object, the present invention also provides a kind of rail-to-rail peak-value detection method, comprises the following steps:
When input voltage reduces, the grid voltage of the first transistor reduces thereupon, then the drain current difference of the first transistor and third transistor flows to the 5th transistor;
Mirror image is carried out by the difference between current of the 6th transistor to the 5th transistor;
By the difference between current after mirror image, continuous discharge is carried out to electric capacity;
Until when output voltage equals input voltage, electric capacity stops electric discharge;
When input voltage rises, electric capacity keeps the minimum voltage of input end, and this minimum voltage is designated as negative peak voltage.
The invention has the beneficial effects as follows: compared with prior art, rail-to-rail peak detection circuit provided by the invention and method thereof, this circuit adopts transistor to substitute existing diode, during this transistor turns, pressure reduction, much smaller than diode pressure reduction, makes output to reach supply voltage like this, and what make output is real input peak value, supply voltage can be reached again, namely rail-to-rail output simultaneously; It is poor that the method adopts the effect of the first transistor and third transistor to produce drain current, then carry out mirror image processing by current mirror to difference between current, the method achieves the control of crystal and the process of current mirror, not only facilitate integrated, and accurately realize peakvalue's checking.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of the present invention first specific embodiment;
Fig. 2 is the workflow diagram of the present invention first specific embodiment;
Fig. 3 is the circuit theory diagrams of the present invention second specific embodiment;
Fig. 4 is the workflow diagram of the present invention second specific embodiment;
Fig. 5 is the first testing circuit figure of the prior art;
Fig. 6 is the second testing circuit figure of the prior art.
Embodiment
In order to more clearly state the present invention, below in conjunction with accompanying drawing, the present invention is further described.
Refer to Fig. 1, the rail-to-rail peak detection circuit of forward of the first specific embodiment of the present invention, comprises the discharge circuit be made up of the first transistor M11, transistor seconds M12, third transistor M13 and the 4th transistor M14, the current mirroring circuit be made up of the 5th transistor M15 and the 6th transistor M16 and electric capacity C1, the grid of the first transistor M11 receives input signal, the common end grounding that the source electrode of the first transistor M11 and the source electrode of transistor seconds M12 are formed, the drain electrode of the first transistor M11 is electrically connected with the drain electrode of third transistor M13, the common port that the grid of third transistor M13 and the grid of the 4th transistor M14 are formed is by current source I1 ground connection, the drain electrode of the 4th transistor M14 is electrically connected to the drain electrode of transistor seconds M12, the grid of transistor seconds M12 is electrically connected to one end of electric capacity C1, the drain electrode of the common port that the grid of the 5th transistor M15 and the 6th transistor M16 are formed and the 5th transistor M15 is electrically connected to the common port that the first transistor M11 and third transistor M13 is formed respectively, the drain electrode of the 6th transistor M16 is electrically connected with the other end of electric capacity C1 and charges to electric capacity C1, the other end ground connection of electric capacity C1, third transistor M13, 4th transistor M14, the source electrode of the 5th transistor M15 and the 6th transistor M16 is contacted successively and is connect, when input voltage increases, the grid voltage of the first transistor M11 increases thereupon, then the drain current difference of the first transistor M11 and third transistor M13 flows to the 5th transistor M15, and carry out mirror image by the difference between current of the 6th transistor M16 to the 5th transistor M15, carried out continuing charging to electric capacity C1 by the difference between current after mirror image, until when output voltage equals input voltage, electric capacity C1 stops charging, when the output voltage drops, electric capacity C1 keeps the ceiling voltage of input end, and this ceiling voltage is designated as peak forward voltage.Transistor is triode or metal-oxide-semiconductor.
Compared to the situation of prior art, the rail-to-rail peak detection circuit of forward provided by the invention, this circuit adopts transistor to substitute existing diode, during this transistor turns, pressure reduction, much smaller than diode pressure reduction, makes output to reach supply voltage like this, makes the real forward that is exported input peak value, supply voltage can be reached again, namely rail-to-rail output simultaneously.
Please with further reference to Fig. 2, based on above-mentioned circuit, the invention provides a kind of rail-to-rail peak-value detection method, comprise the following steps:
When input voltage increases, the grid voltage of the first transistor increases thereupon, then the drain current difference of the first transistor and third transistor flows to the 5th transistor;
Mirror image is carried out by the difference between current of the 6th transistor to the 5th transistor;
Carried out continuing charging to electric capacity by the difference between current after mirror image;
Until when output voltage equals input voltage, electric capacity stops charging;
When the output voltage drops, electric capacity keeps the ceiling voltage of input, and this ceiling voltage is designated as peak forward voltage.
Compared to the situation of prior art, the rail-to-rail peak-value detection method of forward provided by the invention, it is poor that the method adopts the effect of the first transistor M11 and third transistor M13 to produce drain current, by current mirror, mirror image processing is carried out to difference between current again, the method achieve the control of crystal and the process of current mirror, not only facilitate integrated, and accurately realize forward peakvalue's checking.
Please consult Fig. 3 further, the rail-to-rail peak detection circuit of negative sense of the second specific embodiment of the present invention, comprises the discharge circuit be made up of the first transistor M21, transistor seconds M22, third transistor M23 and the 4th transistor M24, the current mirroring circuit be made up of the 5th transistor M25 and the 6th transistor M26 and electric capacity C2, the grid of the first transistor M21 receives input signal, the common port that the source electrode of source electrode and transistor seconds M22 that one end of electric capacity C2 is connected to the first transistor M21 by current source I2 is formed, the drain electrode of the first transistor M21 is electrically connected with the drain electrode of third transistor M23, the drain electrode of the common port that the grid of third transistor M23 and the grid of the 4th transistor M24 are formed and the 4th transistor M24 is electrically connected to the drain electrode of transistor seconds M22 respectively, the grid of transistor seconds M22 is electrically connected to the other end of electric capacity C2, the drain electrode of the common port that the grid of the 5th transistor M25 and the 6th transistor M26 are formed and the 5th transistor M25 is electrically connected to the common port that the first transistor M21 and third transistor M23 is formed respectively, the drain electrode of the 6th transistor M26 is electrically connected with the other end of electric capacity C1 and charges to electric capacity C1, third transistor M23, 4th transistor M24, the source grounding of the 5th transistor M25 and the 6th transistor M26, when input voltage reduces, the grid voltage of the first transistor M21 reduces thereupon, then the drain current difference of the first transistor M21 and third transistor M23 flows to the 5th transistor M25, and carry out mirror image by the difference between current of the 6th transistor M26 to the 5th transistor M25, by the difference between current after mirror image, continuous discharge is carried out to electric capacity C1, until when output voltage equals input voltage, electric capacity C1 stops electric discharge, when input voltage rises, electric capacity C1 keeps the minimum voltage of input end, and this most high-low voltage is designated as negative peak voltage.Transistor is triode or metal-oxide-semiconductor.
Compared to the situation of prior art, the rail-to-rail peak detection circuit of negative sense provided by the invention, this circuit adopts transistor to substitute existing diode, during this transistor turns, pressure reduction, much smaller than diode pressure reduction, makes output to reach supply voltage like this, makes the real negative sense that is exported input peak value, supply voltage can be reached again, namely rail-to-rail output simultaneously.
Please with further reference to Fig. 4, based on above-mentioned circuit, the invention provides a kind of rail-to-rail peak-value detection method, comprise the following steps:
When input voltage reduces, the grid voltage of the first transistor reduces thereupon, then the drain current difference of the first transistor and third transistor flows to the 5th transistor;
Mirror image is carried out by the difference between current of the 6th transistor to the 5th transistor;
By the difference between current after mirror image, continuous discharge is carried out to electric capacity;
Until when output voltage equals input voltage, electric capacity stops electric discharge;
When input voltage rises, electric capacity keeps the minimum voltage of input end, and this minimum voltage is designated as negative peak voltage.
Compared to the situation of prior art, the rail-to-rail peak-value detection method of negative sense provided by the invention, the effect of the first transistor M21 and third transistor M23 is adopted to produce drain current poor, by current mirror, mirror image processing is carried out to difference between current again, the method achieve the control of crystal and the process of current mirror, not only facilitate integrated, and accurately realize negative peak detection.
Rail-to-rail peak detection circuit provided by the invention and method thereof, adopt transistor to substitute diode, during this transistor turns, pressure reduction is much smaller than diode pressure reduction, there is not the reason of diode forward pressure reduction, therefore can realize rail-to-rail peakvalue's checking when exporting and reappearing input signal peak value more yet.
Be only several specific embodiment of the present invention above, but the present invention is not limited thereto, the changes that any person skilled in the art can think of all should fall into protection scope of the present invention.
Claims (6)
1. a rail-to-rail peak detection circuit, is characterized in that, comprises the discharge circuit be made up of the first transistor, transistor seconds, third transistor and the 4th transistor, the current mirroring circuit be made up of the 5th transistor and the 6th transistor and electric capacity, the grid of described the first transistor receives input signal, the common end grounding that the source electrode of the first transistor and the source electrode of transistor seconds are formed, the drain electrode of described the first transistor is electrically connected with the drain electrode of third transistor, the common port that the grid of third transistor and the grid of the 4th transistor are formed is by current source ground connection, the drain electrode of the 4th transistor is electrically connected to the drain electrode of transistor seconds, the grid of described transistor seconds is electrically connected to one end of electric capacity, the drain electrode of the common port that the grid of described 5th transistor and the 6th transistor are formed and the 5th transistor is electrically connected to the common port that the first transistor and third transistor are formed respectively, the drain electrode of described 6th transistor is electrically connected with the other end of electric capacity and charges to electric capacity, the other end ground connection of described electric capacity, described third transistor, 4th transistor, the source electrode of the 5th transistor and the 6th transistor is contacted successively and is connect,
When input voltage increases, the grid voltage of the first transistor increases thereupon, then the drain current difference of the first transistor and third transistor flows to the 5th transistor, and carry out mirror image by the difference between current of the 6th transistor to the 5th transistor, carried out continuing charging to electric capacity by the difference between current after mirror image, until when output voltage equals input voltage, electric capacity stops charging; When the output voltage drops, electric capacity keeps the ceiling voltage of input, and this ceiling voltage is designated as peak forward voltage.
2. rail-to-rail peak detection circuit according to claim 1, is characterized in that, described transistor is triode or metal-oxide-semiconductor.
3. a rail-to-rail peak-value detection method, is characterized in that, comprises the following steps:
When input voltage increases, the grid voltage of the first transistor increases thereupon, then the drain current difference of the first transistor and third transistor flows to the 5th transistor;
Mirror image is carried out by the difference between current of the 6th transistor to the 5th transistor;
Carried out continuing charging to electric capacity by the difference between current after mirror image;
Until when output voltage equals input voltage, electric capacity stops charging;
When the output voltage drops, electric capacity keeps the ceiling voltage of input, and this ceiling voltage is designated as peak forward voltage.
4. a rail-to-rail peak detection circuit, is characterized in that, comprises the discharge circuit be made up of the first transistor, transistor seconds, third transistor and the 4th transistor, the current mirroring circuit be made up of the 5th transistor and the 6th transistor and electric capacity, the grid of described the first transistor receives input signal, the common port that the source electrode of source electrode and transistor seconds that one end of electric capacity is connected to the first transistor by current source is formed, the drain electrode of the first transistor is electrically connected with the drain electrode of third transistor, the drain electrode of the common port that the grid of third transistor and the grid of the 4th transistor are formed and the 4th transistor is electrically connected to the drain electrode of transistor seconds respectively, the grid of described transistor seconds is electrically connected to the other end of electric capacity, the drain electrode of the common port that the grid of described 5th transistor and the 6th transistor are formed and the 5th transistor is electrically connected to the common port that the first transistor and third transistor are formed respectively, the drain electrode of described 6th transistor is electrically connected with the other end of electric capacity and charges to electric capacity, described third transistor, 4th transistor, the source grounding of the 5th transistor and the 6th transistor,
When input voltage reduces, the grid voltage of the first transistor reduces thereupon, then the drain current difference of the first transistor and third transistor flows to the 5th transistor, and carry out mirror image by the difference between current of the 6th transistor to the 5th transistor, by the difference between current after mirror image, continuous discharge is carried out to electric capacity, until when output voltage equals input voltage, electric capacity stops electric discharge; When input voltage rises, electric capacity keeps the minimum voltage of input end, and this most high-low voltage is designated as negative peak voltage.
5. rail-to-rail peak detection circuit according to claim 4, is characterized in that, described transistor is triode or metal-oxide-semiconductor.
6. a rail-to-rail peak-value detection method, is characterized in that, comprises the following steps:
When input voltage reduces, the grid voltage of the first transistor reduces thereupon, then the drain current difference of the first transistor and third transistor flows to the 5th transistor;
Mirror image is carried out by the difference between current of the 6th transistor to the 5th transistor;
By the difference between current after mirror image, continuous discharge is carried out to electric capacity;
Until when output voltage equals input voltage, electric capacity stops electric discharge;
When input voltage rises, electric capacity keeps the minimum voltage of input end, and this minimum voltage is designated as negative peak voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410114797.8A CN104569557A (en) | 2014-03-26 | 2014-03-26 | Rail-to-rail peak detection circuit and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410114797.8A CN104569557A (en) | 2014-03-26 | 2014-03-26 | Rail-to-rail peak detection circuit and method |
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| CN104569557A true CN104569557A (en) | 2015-04-29 |
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| CN201410114797.8A Pending CN104569557A (en) | 2014-03-26 | 2014-03-26 | Rail-to-rail peak detection circuit and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107395165A (en) * | 2016-05-16 | 2017-11-24 | 上海亨骏自动化设备有限公司 | A kind of liquid level gauge echo time collection peak detection circuit |
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| CN107395165A (en) * | 2016-05-16 | 2017-11-24 | 上海亨骏自动化设备有限公司 | A kind of liquid level gauge echo time collection peak detection circuit |
| CN107395165B (en) * | 2016-05-16 | 2022-09-09 | 上海亨骏自动化设备有限公司 | Peak detection circuit for acquiring echo time of liquid level meter |
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