TWI543527B - Power on reset circuit - Google Patents

Power on reset circuit Download PDF

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TWI543527B
TWI543527B TW103141529A TW103141529A TWI543527B TW I543527 B TWI543527 B TW I543527B TW 103141529 A TW103141529 A TW 103141529A TW 103141529 A TW103141529 A TW 103141529A TW I543527 B TWI543527 B TW I543527B
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circuit
electrically connected
type transistor
resistor
reset
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TW103141529A
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TW201620252A (en
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楊智仁
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天鈺科技股份有限公司
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Description

上電復位電路 Power-on reset circuit

本發明係關一種上電復位電路,尤其係關於一種具有較低靜態電流之上電復位電路。 The present invention relates to a power-on reset circuit, and more particularly to an electrical reset circuit having a lower quiescent current.

在大規模數位積體電路中,暫存器與邏輯電路作為常用功能單元設置在該數位積體電路內。為了避免暫存器與邏輯電路由於初始狀態不確定造成積體電路邏輯功能紊亂,通常需要設置上電復位電路來保證該些功能單元都準確地處於初始復位狀態,使得該數位積體電路工作在正常之邏輯狀態。 In a large-scale digital integrated circuit, a register and a logic circuit are disposed in the digital integrated circuit as a common functional unit. In order to avoid the logic function of the integrated circuit and the logic circuit due to the initial state uncertainty, it is usually necessary to set the power-on reset circuit to ensure that the functional units are accurately in the initial reset state, so that the digital integrated circuit works. Normal logic state.

前述上電復位電路通常採用電阻-電容(RC)復位電路來產生復位訊號,然而,由該RC復位電路輸出之復位訊號中常常包含有較多噪音雜訊,從而增加了前述功能元件無法正常恢復至初始復位狀態之機率,導致數位積體電路之工作可靠性較低。 The power-on reset circuit usually uses a resistor-capacitor (RC) reset circuit to generate a reset signal. However, the reset signal outputted by the RC reset circuit often contains more noise, thereby increasing the failure of the aforementioned functional components to be restored. The probability of reaching the initial reset state results in a lower operational reliability of the digital integrated circuit.

有鑑於此,有必要提供一種噪音雜訊較少的上電復位電路。 In view of this, it is necessary to provide a power-on reset circuit with less noise and noise.

一種上電復位電路,用於在自接收到電源訊號開始之一時間段輸出一復位訊號,包括輸入端、充放電電路、整形電路以及輸出端,該輸入端用於接收該電源訊號,該電源訊號對該充放電電路進行充電,且該充電電路對應輸出一第一控制電壓,該整形電路用於對依據該第一控制訊號獲得一復位訊號,該復位訊號自該輸出 端輸出。該充放電電路包括充電電路與放電電路,該充電電路用於依據該電源訊號進行充電,該放電電路在該充電電路充電之過程中對該充電電路進行放電,以減緩該放電電路之充電速度,降低該第一控制電壓與復位訊號之噪音訊號。 A power-on reset circuit is configured to output a reset signal, including an input end, a charge and discharge circuit, a shaping circuit and an output end, for receiving the power signal, the power source is received from the beginning of receiving the power signal, and the input terminal is configured to receive the power signal, the power source The charging circuit charges the charging and discharging circuit, and the charging circuit outputs a first control voltage. The shaping circuit is configured to obtain a reset signal according to the first control signal, and the reset signal is outputted from the output signal. End output. The charging and discharging circuit includes a charging circuit and a discharging circuit, wherein the charging circuit is configured to perform charging according to the power signal, and the discharging circuit discharges the charging circuit during charging of the charging circuit to slow down the charging speed of the discharging circuit. The noise signal of the first control voltage and the reset signal is reduced.

相較於先前技術,放電電路在復位過程中提高了放電速度,從而能夠有效保證復位訊號中無噪音雜訊,保證接收該復位訊號之積體電路能夠準確地復位。 Compared with the prior art, the discharge circuit increases the discharge speed during the reset process, thereby effectively ensuring noise-free noise in the reset signal, and ensuring that the integrated circuit receiving the reset signal can be accurately reset.

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10、30‧‧‧上電復位電路 10, 30‧‧‧ Power-on reset circuit

20‧‧‧積體電路 20‧‧‧ integrated circuit

101、301‧‧‧輸入端 101, 301‧‧‧ input

102、302‧‧‧輸出端 102, 302‧‧‧ output

110‧‧‧參考電壓產生電路 110‧‧‧reference voltage generating circuit

R1‧‧‧第一電阻 R1‧‧‧first resistance

MP1‧‧‧第一P型電晶體 MP1‧‧‧First P-type transistor

MP2‧‧‧第二P型電晶體 MP2‧‧‧Second P-type transistor

MP3‧‧‧第三P型電晶體 MP3‧‧‧ Third P-type transistor

MP4‧‧‧第四P型電晶體 MP4‧‧‧4th P-type transistor

MP5‧‧‧第五P型電晶體 MP5‧‧‧ Fifth P-type transistor

MN1‧‧‧第一N型電晶體 MN1‧‧‧First N-type transistor

MN2‧‧‧第二N型電晶體 MN2‧‧‧Second N-type transistor

MN3‧‧‧第三N型電晶體 MN3‧‧‧ Third N-type transistor

MN4‧‧‧第四N型電晶體 MN4‧‧‧4th N-type transistor

MN5‧‧‧第五N型電晶體 MN5‧‧‧ fifth N-type transistor

R2‧‧‧第二電阻 R2‧‧‧second resistance

111‧‧‧參考電壓輸出端 111‧‧‧reference voltage output

130、330‧‧‧充放電電路 130, 330‧‧‧Charge and discharge circuit

131、331‧‧‧開關電路 131,331‧‧‧Switch circuit

132、332‧‧‧充電電路 132, 332‧‧‧Charging circuit

133、333‧‧‧放電電路 133, 333‧‧‧ discharge circuit

134、334‧‧‧第一控制電壓輸出端 134, 334‧‧‧ first control voltage output

R3‧‧‧第三電阻 R3‧‧‧ third resistor

R4‧‧‧第四電阻 R4‧‧‧fourth resistor

R5‧‧‧第五電阻 R5‧‧‧ fifth resistor

150‧‧‧控制電路 150‧‧‧Control circuit

151‧‧‧第二控制電壓輸出端 151‧‧‧second control voltage output

170‧‧‧整形電路 170‧‧‧Shaping circuit

INV1‧‧‧第一反相器 INV1‧‧‧First Inverter

INV2‧‧‧第二反相器 INV2‧‧‧Second inverter

INV3‧‧‧第三反相器 INV3‧‧‧ third inverter

171‧‧‧低壓偵測端 171‧‧‧Low-voltage detection terminal

351‧‧‧第三反相器之輸入端 351‧‧‧ input of the third inverter

352‧‧‧第三反相器之輸出端 352‧‧‧Output of the third inverter

A、B、C、D‧‧‧節點 A, B, C, D‧‧‧ nodes

圖1係本發明一較佳實施例中上電復位電路之電路方框圖。 1 is a block diagram of a circuit of a power-on reset circuit in accordance with a preferred embodiment of the present invention.

圖2係本發明一實施例中如圖1所示上電復位電路之具體電路圖。 FIG. 2 is a specific circuit diagram of the power-on reset circuit shown in FIG. 1 according to an embodiment of the present invention.

圖3係如2所示上電復位電路中對應節點之電壓波形圖。 Figure 3 is a voltage waveform diagram of a corresponding node in the power-on reset circuit as shown in Figure 2.

圖4係本發明一變更實施例中上電復位電路之電路方框圖。 4 is a circuit block diagram of a power-on reset circuit in a modified embodiment of the present invention.

圖5係本發明一實施例中如圖4所示上電復位電路之具體電路圖。 FIG. 5 is a specific circuit diagram of the power-on reset circuit shown in FIG. 4 according to an embodiment of the present invention.

圖6係如5所示上電復位電路中對應節點之電壓波形圖。 Figure 6 is a voltage waveform diagram of a corresponding node in the power-on reset circuit as shown in Figure 5.

下面結合附圖具體說明本發明上電復位電路之具體電路結構。 The specific circuit structure of the power-on reset circuit of the present invention will be specifically described below with reference to the accompanying drawings.

請參閱圖1,其為本發明一較佳實施例中上電復位電路10(POWER ON RESET,POR)之電路方框圖,其中,該上電復位電路10用於為其他積體電路20,尤其係大規模數位積體電路提供復位訊號Rs,以保證該積體電路20上電後所有之存儲單元(圖未示)以及邏輯單元可靠地處於初始化狀態,從而在該積體電路正常上電後能夠準 確可靠地工作。在本實施例中,該積體電路係在復位訊號Rs為低電位時處於復位狀態,而在復位訊號Rs處於高電位時處於正常工作狀態。 Please refer to FIG. 1, which is a circuit block diagram of a power-on reset circuit 10 (POWER ON RESET, POR) according to a preferred embodiment of the present invention. The power-on reset circuit 10 is used for other integrated circuits 20, especially The large-scale digital integrated circuit provides a reset signal Rs to ensure that all the memory cells (not shown) and the logic cells are reliably initialized after the integrated circuit 20 is powered up, so that after the integrated circuit is powered on normally, quasi- Work reliably. In this embodiment, the integrated circuit is in a reset state when the reset signal Rs is at a low potential, and is in a normal operation state when the reset signal Rs is at a high potential.

另外,需要說明的是,本說明書所述之「上電」係指積體電路20開始接收電源訊號VDD。當然,上電復位電路10亦可以集成於積體電路20中。 In addition, it should be noted that the "power-on" described in this specification means that the integrated circuit 20 starts receiving the power signal VDD. Of course, the power-on reset circuit 10 can also be integrated in the integrated circuit 20.

該上電復位電路10包括參考電壓產生電路110、充放電電路130、控制電路150以及整形電路170。參考電壓產生電路110電性連接輸入端101以及充放電電路130,用於自輸入端101接收電源訊號VDD,並且依據該電源訊號VDD輸出參考電壓Vr至該充放電電路130。充放電電路130電性連接該控制電路150,依據參考電壓Vr進行充電或者放電,並且輸出一第一控制電壓V1至控制電路150。控制電路150電性連接於參考電壓產生電路110、充放電電路130以及整形電路170,控制電路150在參考電壓Vr以及第一控制電壓V1控制下選擇性輸出電源訊號VDD及第二控制電壓V2至整形電路170。整形電路170用於對電源訊號VDD及該第二控制電壓V2進行放大與整形,從而獲得復位訊號Rs,且將獲得之復位訊號Rs自輸出端102輸出。 The power-on reset circuit 10 includes a reference voltage generating circuit 110, a charge and discharge circuit 130, a control circuit 150, and a shaping circuit 170. The reference voltage generating circuit 110 is electrically connected to the input terminal 101 and the charging and discharging circuit 130 for receiving the power signal VDD from the input terminal 101, and outputting the reference voltage Vr to the charging and discharging circuit 130 according to the power signal VDD. The charging and discharging circuit 130 is electrically connected to the control circuit 150, charges or discharges according to the reference voltage Vr, and outputs a first control voltage V1 to the control circuit 150. The control circuit 150 is electrically connected to the reference voltage generating circuit 110, the charging and discharging circuit 130, and the shaping circuit 170. The control circuit 150 selectively outputs the power signal VDD and the second control voltage V2 under the control of the reference voltage Vr and the first control voltage V1. Shaping circuit 170. The shaping circuit 170 is configured to amplify and shape the power signal VDD and the second control voltage V2 to obtain the reset signal Rs, and output the obtained reset signal Rs from the output terminal 102.

請參考圖2,其為如圖1所示上電復位電路10之具體電路結構圖。 其中,參考電壓產生電路110包括第一電阻R1、第一P型電晶體MP1、第一N型電晶體MN1以及第二電阻R2。該第一電阻R1一端電性連接輸入端101,另一端電性連接該第一P型電晶體MP11之源極。第一P型電晶體MP1之閘極與汲極直接電性連接,該第一P型電晶體MP1構成二極體連接之電晶體。第一N型電晶體MN1之閘極與 汲極直接電性連接,且同時與第一P型電晶體MP1之閘極與汲極電性連接,第一N型電晶體MN1之源極電性連接第二電阻R2,第一N型電晶體MN1亦構成二極體連接之電晶體。第二電阻R2一端電性連接該第一N型電晶體MN1,另一端連接接地端GND。第一P型電晶體MP1之汲極與第一N型電晶體MN1汲極之間的節點A作為參考電壓輸出端111,用於輸出參考電壓Vr。本實施例中,第一電阻R1與第二電阻R2之電阻值相同,且第一P型電晶體MP1與第一N型電晶體MN1之導通電阻亦基本相同,由此,參考電壓Vr為1/2VDD。 Please refer to FIG. 2 , which is a specific circuit structure diagram of the power-on reset circuit 10 shown in FIG. 1 . The reference voltage generating circuit 110 includes a first resistor R1, a first P-type transistor MP1, a first N-type transistor MN1, and a second resistor R2. One end of the first resistor R1 is electrically connected to the input end 101, and the other end is electrically connected to the source of the first P-type transistor MP11. The gate of the first P-type transistor MP1 is directly electrically connected to the drain, and the first P-type transistor MP1 constitutes a diode-connected transistor. The gate of the first N-type transistor MN1 The drain is directly electrically connected, and is electrically connected to the gate and the drain of the first P-type transistor MP1. The source of the first N-type transistor MN1 is electrically connected to the second resistor R2, and the first N-type is electrically connected. The crystal MN1 also constitutes a diode-connected transistor. The second resistor R2 is electrically connected to the first N-type transistor MN1 at one end, and the other end is connected to the ground GND. A node A between the drain of the first P-type transistor MP1 and the drain of the first N-type transistor MN1 serves as a reference voltage output terminal 111 for outputting the reference voltage Vr. In this embodiment, the resistance values of the first resistor R1 and the second resistor R2 are the same, and the on-resistances of the first P-type transistor MP1 and the first N-type transistor MN1 are also substantially the same, whereby the reference voltage Vr is 1 /2VDD.

第一P型電晶體MP1與第一N型電晶體MN1均為二極體連接,因此當加載於第一P型電晶體MP1及第一N型電晶體MN1之電壓大於其開啟電壓Vth時,其均處於飽和導通狀態,從而呈現較為恆定之電阻特性。 The first P-type transistor MP1 and the first N-type transistor MN1 are both connected by a diode, so when the voltage applied to the first P-type transistor MP1 and the first N-type transistor MN1 is greater than the turn-on voltage Vth thereof, They are all in a saturated conduction state, thereby exhibiting a relatively constant resistance characteristic.

充放電電路130包括開關電路131、充電電路132與放電電路133。該開關電路131用於在參考電壓Vr控制下選擇性地將電源訊號VDD傳輸至充電電路132。充電電路132用於對電源訊號VDD提供之電荷進行存儲從而進行充電。放電電路133用於為充電電路132提供放電通路以釋放存儲之電荷,以延遲或減緩充電電路132之充電時間,從而獲得足夠之復位時間。 The charge and discharge circuit 130 includes a switch circuit 131, a charge circuit 132, and a discharge circuit 133. The switch circuit 131 is configured to selectively transmit the power signal VDD to the charging circuit 132 under the control of the reference voltage Vr. The charging circuit 132 is configured to store the charge provided by the power signal VDD for charging. The discharge circuit 133 is used to provide a discharge path for the charging circuit 132 to release the stored charge to delay or slow down the charging time of the charging circuit 132, thereby obtaining a sufficient reset time.

具體地,開關電路131包括第二P型電晶體MP2,第二P型電晶體MP2之閘極電性連接參考電壓輸出端111,第二P型電晶體之源極電性連接輸入端101,第二P型電晶體之汲極電性連接充電電路132。 Specifically, the switch circuit 131 includes a second P-type transistor MP2, the gate of the second P-type transistor MP2 is electrically connected to the reference voltage output terminal 111, and the source of the second P-type transistor is electrically connected to the input terminal 101. The drain of the second P-type transistor is electrically connected to the charging circuit 132.

充電電路132包括第三電阻R3與第一電容C1,該第三電阻R3與第一電容C1自第二P型電晶體MP2之汲極依次串聯至接地端GND。其 中,該第三電阻R3與第一電容C1之間的節點B作為第一控制電壓輸出端134。 The charging circuit 132 includes a third resistor R3 and a first capacitor C1. The third resistor R3 and the first capacitor C1 are sequentially connected in series from the drain of the second P-type transistor MP2 to the ground GND. its The node B between the third resistor R3 and the first capacitor C1 serves as the first control voltage output terminal 134.

放電電路133包括第四電阻R4、第五電阻R5、第二N型電晶體MN2與第三N型電晶體MN3。 The discharge circuit 133 includes a fourth resistor R4, a fifth resistor R5, a second N-type transistor MN2, and a third N-type transistor MN3.

第四電阻R4一端電性連接第二P型電晶體MP2之汲極,另一端電性連接第五電阻R5。可以理解,第四電阻R4之電阻值可以依據不同的電源電壓進行調整。 One end of the fourth resistor R4 is electrically connected to the drain of the second P-type transistor MP2, and the other end is electrically connected to the fifth resistor R5. It can be understood that the resistance value of the fourth resistor R4 can be adjusted according to different power supply voltages.

第五電阻R5用於對電源訊號VDD執行滯後偵測,一端電性連接第四電阻R4,另外一端電性連接第二N型電晶體MN2。第二N型電晶體MN2的閘極電性連接參考電壓輸出端111,第二N型電晶體MN2之汲極電性連接第五電阻R5,第二N型電晶體MN2之源極電性連接接地端GND。 The fifth resistor R5 is configured to perform hysteresis detection on the power signal VDD, one end is electrically connected to the fourth resistor R4, and the other end is electrically connected to the second N-type transistor MN2. The gate of the second N-type transistor MN2 is electrically connected to the reference voltage output terminal 111, the drain of the second N-type transistor MN2 is electrically connected to the fifth resistor R5, and the source of the second N-type transistor MN2 is electrically connected. Ground GND.

第三N型電晶體MN3之閘極電性連接整形電路170,第三N型電晶體MN3之汲極與源極分別電性連接第四電阻R4之兩端。第三N型電晶體MN3作為低壓偵測單元,用於偵測電源訊號VDD。當偵測到電源訊號VDD低於預定值時加快放電電路133的放電速度,防止由於電源訊號VDD又重覆升高及降低導致充電電路132輸出之第一控制電壓V1不穩定,亦使得上電復位電路10能夠及時可靠地在電源訊號VDD異常掉電時輸出復位訊號。 The gate of the third N-type transistor MN3 is electrically connected to the shaping circuit 170. The drain and the source of the third N-type transistor MN3 are electrically connected to the two ends of the fourth resistor R4, respectively. The third N-type transistor MN3 is used as a low-voltage detecting unit for detecting the power signal VDD. When the power signal VDD is detected to be lower than the predetermined value, the discharge speed of the discharge circuit 133 is accelerated, and the first control voltage V1 outputted by the charging circuit 132 is prevented from being unstable due to the repeated increase and decrease of the power signal VDD. The reset circuit 10 can output a reset signal in a timely and reliable manner when the power signal VDD is abnormally powered down.

控制電路150電性連接於參考電壓輸出端111與第一控制電壓輸出端134,用於在參考電壓Vr與第一控制電壓V1之控制下選擇性輸出電源訊號VDD以及第二控制電壓V2。 The control circuit 150 is electrically connected to the reference voltage output terminal 111 and the first control voltage output terminal 134 for selectively outputting the power signal VDD and the second control voltage V2 under the control of the reference voltage Vr and the first control voltage V1.

具體地,該控制電路150包括第三P型電晶體MP3與第四N型電晶體 MN4,第三P型電晶體MP3之閘極電性連接參考電壓輸出端111,源極電性連接輸入端111,汲極電性連接第四N型電晶體MN4。第四N型電晶體MN4之閘極電性連接第一控制電壓輸出端134,汲極電性連接第三P型電晶體MP3之汲極,源極連接接地端GND。其中,第三P型電晶體MP3汲極與第四N型電晶體MN4之汲極之間的節點C作為第二控制電壓輸出端151。 Specifically, the control circuit 150 includes a third P-type transistor MP3 and a fourth N-type transistor. MN4, the gate of the third P-type transistor MP3 is electrically connected to the reference voltage output terminal 111, the source is electrically connected to the input terminal 111, and the drain is electrically connected to the fourth N-type transistor MN4. The gate of the fourth N-type transistor MN4 is electrically connected to the first control voltage output terminal 134, the drain is electrically connected to the drain of the third P-type transistor MP3, and the source is connected to the ground GND. The node C between the drain of the third P-type transistor MP3 and the drain of the fourth N-type transistor MN4 serves as the second control voltage output terminal 151.

整形電路170電性連接該控制電路,用於對電源訊號VDD與第二控制電壓V2進行整形。具體地,整形電路170包括依次串聯的第一反相器INV1、第二反相器INV2與第三反相器INV3,即第一反相器INV1之輸入端(未標示)電性連接第二控制電壓輸出端151,第一反相器INV1之輸出端電性連接第二反相器INV2之輸入端,第二反相器INV2之輸出端電性連接第三反相器INV3之輸入端,第三反相器INV3之輸出端電性連接輸出端102。其中,第二反相器INV2之輸出端與第三反相器INV3之輸入端之間的節點D作為低壓偵測端171,且該低壓偵測端171與第三N型電晶體MN3之閘極電性連接。 The shaping circuit 170 is electrically connected to the control circuit for shaping the power signal VDD and the second control voltage V2. Specifically, the shaping circuit 170 includes a first inverter INV1, a second inverter INV2 and a third inverter INV3 connected in series, that is, an input end (not labeled) of the first inverter INV1 is electrically connected to the second The control voltage output terminal 151, the output end of the first inverter INV1 is electrically connected to the input end of the second inverter INV2, and the output end of the second inverter INV2 is electrically connected to the input end of the third inverter INV3. The output end of the third inverter INV3 is electrically connected to the output terminal 102. The node D between the output end of the second inverter INV2 and the input end of the third inverter INV3 serves as the low voltage detecting end 171, and the low voltage detecting end 171 and the third N-type transistor MN3 are blocked. Extremely electrical connection.

在本發明其他實施方式中,第一反相器INV1亦可變更為施密特觸發器,以提高復位訊號Rs之抗噪音能力。 In other embodiments of the present invention, the first inverter INV1 may also be changed to a Schmitt trigger to improve the noise immunity of the reset signal Rs.

請參閱圖3,其為如圖2所示上電復位電路10中對應節點之電壓波形圖,其中VDD表示輸入端101接收之電源訊號VDD之波形圖,Vr表示參考電壓輸出端111輸出的參考電壓Vr之波形圖,V1表示第一控制電壓輸出端134輸出的第一控制電壓V1之波形圖,Rs表示輸出端102輸出之復位訊號Rs之波形圖,V2表示第二控制電壓V2之波形圖。現結合圖2具體說明上電復位電路10以及掉電偵測之 工作過程。 Please refer to FIG. 3 , which is a voltage waveform diagram of a corresponding node in the power-on reset circuit 10 shown in FIG. 2 , where VDD represents a waveform diagram of the power signal VDD received by the input terminal 101, and Vr represents a reference outputted by the reference voltage output terminal 111. A waveform diagram of the voltage Vr, V1 represents a waveform diagram of the first control voltage V1 outputted by the first control voltage output terminal 134, Rs represents a waveform diagram of the reset signal Rs outputted by the output terminal 102, and V2 represents a waveform diagram of the second control voltage V2. . The power-on reset circuit 10 and the power-down detection are specifically described with reference to FIG. 2 . work process.

在t1時刻,積體電路20(請參閱圖1)開始上電,電源訊號VDD自零電位(0)開始升高。 At time t1, the integrated circuit 20 (see FIG. 1) starts to be powered up, and the power signal VDD rises from zero potential (0).

在t2時刻,當電源訊號VDD大於2Vth時,其中Vth表示P型電晶體或者N型電晶體之開啟電壓,第一P型電晶體MP1與第一N型電晶體導通,由於參考電壓輸出端111輸出的參考電壓Vr為1/2VDD,則此時參考電壓Vr為Vth。 At time t2, when the power signal VDD is greater than 2Vth, where Vth represents the turn-on voltage of the P-type transistor or the N-type transistor, the first P-type transistor MP1 is turned on with the first N-type transistor due to the reference voltage output terminal 111. The output reference voltage Vr is 1/2 VDD, and the reference voltage Vr is Vth at this time.

對於第二P型電晶體MP2而言,作為控制電極的閘極加載之電壓為參考電壓Vr(Vth),作為傳輸電極之源極加載電源訊號VDD(2Vth),由此,第二P型電晶體MP2之閘極-汲極電壓Vgs為Vth,則第二P型電晶體MP2導通。電源訊號VDD藉由第二P型電晶體加載至充電電路131,從而對第三電阻R3與第一電容C1充電,第一控制電壓輸出端134輸出之第一控制電壓V1開始至零電位升高。對應地,第四N型電晶體MN4之閘極接收該第一控制電壓V1,由此,第四N型電晶體MN4處於截止狀態。 For the second P-type transistor MP2, the voltage applied to the gate of the control electrode is the reference voltage Vr (Vth), and the source of the transfer electrode is loaded with the power signal VDD (2Vth), thereby, the second P-type When the gate-drain voltage Vgs of the crystal MP2 is Vth, the second P-type transistor MP2 is turned on. The power signal VDD is loaded into the charging circuit 131 by the second P-type transistor, thereby charging the third resistor R3 and the first capacitor C1, and the first control voltage output terminal 134 outputs the first control voltage V1 to rise to zero potential. . Correspondingly, the gate of the fourth N-type transistor MN4 receives the first control voltage V1, whereby the fourth N-type transistor MN4 is in an off state.

對於第二N型電晶體MN2而言,作為控制電極之閘極加載參考電壓Vr,作為傳輸電極之源極加載零電位,由此,第二N型電晶體MN2之閘極-汲極電壓Vgs為Vth,則第二N型電晶體MN2導通,電源訊號VDD亦自放電電路133釋放至地。 For the second N-type transistor MN2, the gate as the control electrode is loaded with the reference voltage Vr, and the source of the transfer electrode is loaded with a zero potential, whereby the gate-drain voltage Vgs of the second N-type transistor MN2 When Vth, the second N-type transistor MN2 is turned on, and the power signal VDD is also released from the discharge circuit 133 to the ground.

對於第三P型電晶體MP3而言,同理如第二P型電晶體MP2之工作狀態,第三P型電晶體MP3導通,由此,電源訊號VDD自第三P型電晶體MP3加載至第二控制電壓輸出端151,則第二控制電壓V2與VDD相同並同步變化。對應地,由於電源訊號VDD大於反相器的開啟 電壓,由此,當第二控制電壓V2與電源訊號相同時,則整形電路170中3個反相器輸出與第二控制電壓V2相位相反(相差180度)的復位訊號Rs,即輸出一低電位為的復位訊號Rs,由此,積體電路20開始處於復位狀態。 For the third P-type transistor MP3, similarly, the working state of the second P-type transistor MP2, the third P-type transistor MP3 is turned on, whereby the power signal VDD is loaded from the third P-type transistor MP3 to The second control voltage output terminal 151, the second control voltage V2 is the same as VDD and changes synchronously. Correspondingly, since the power signal VDD is larger than the inverter Voltage, whereby when the second control voltage V2 is the same as the power signal, the three inverters in the shaping circuit 170 output a reset signal Rs that is opposite in phase (180 degrees difference) from the second control voltage V2, that is, the output is low. The potential is the reset signal Rs, whereby the integrated circuit 20 starts to be in the reset state.

另外,整形電路170之低壓偵測端171輸出與第二控制電壓V2相同之電壓,即等同於電源訊號VDD,由此,第四N型電晶體MN4處於導通狀態,則放電電路133中第四電阻R4直接藉由第四N型電晶體MN4之汲極-源極進行放電,從而提高放電速度。 In addition, the low voltage detecting terminal 171 of the shaping circuit 170 outputs the same voltage as the second control voltage V2, that is, equivalent to the power signal VDD, whereby the fourth N-type transistor MN4 is in an on state, and the fourth in the discharging circuit 133 The resistor R4 is directly discharged by the drain-source of the fourth N-type transistor MN4, thereby increasing the discharge speed.

在t3時刻,當電源訊號VDD逐漸升高並穩定於後,充電電路131中第一電容C2上的第一控制電壓V1大於第三N型電晶體MN3之開啟電壓時,第三電晶體MN3導通,第二控制電壓輸出端151被拉低至零電位,則第二控制電壓V2輸出零電位。整形電路170對第二控制控制電壓V2進行放大整形處理後進行輸出,由於整形電路170包括3個依次串聯的反相器,由此,第二整形電路輸出一與第二控制電壓V2相反相位的電壓,即輸出一高電位的復位訊號,表示積體電路20復位完成。同時,整形電路170中低壓偵測端171的電壓與第二控制電壓V2相同,則第三N型電晶體MN3截止,以使得第一控制電壓V1能夠處於穩定狀態。可見,自電源訊號VDD開始上升之t1時刻至電源訊號VDD處於穩定狀態後之t3時刻的時間段為積體電路20之復位時間。 At time t3, when the power signal VDD gradually rises and stabilizes, the first control voltage V1 on the first capacitor C2 in the charging circuit 131 is greater than the turn-on voltage of the third N-type transistor MN3, and the third transistor MN3 is turned on. The second control voltage output terminal 151 is pulled down to a zero potential, and the second control voltage V2 outputs a zero potential. The shaping circuit 170 performs an amplification and shaping process on the second control control voltage V2, and the shaping circuit 170 includes three inverters connected in series, whereby the second shaping circuit outputs a phase opposite to the second control voltage V2. The voltage, that is, the output of a high-potential reset signal, indicates that the integrated circuit 20 is reset. At the same time, the voltage of the low voltage detecting terminal 171 in the shaping circuit 170 is the same as the second control voltage V2, and the third N-type transistor MN3 is turned off, so that the first control voltage V1 can be in a stable state. It can be seen that the time period from the time t1 when the power signal VDD starts to rise to the time t3 after the power signal VDD is in the steady state is the reset time of the integrated circuit 20.

在t4時刻,上電復位電路10工作過程中,當電源訊號VDD由於異常原因而出現降低,從而使得參考電壓Vr以及第一控制電壓V1均開始降低。 At time t4, during the operation of the power-on reset circuit 10, when the power signal VDD is lowered due to an abnormality, the reference voltage Vr and the first control voltage V1 start to decrease.

在t5時刻,第一控制電壓V1小於第四N型電晶體MN4之開啟電壓, 第四N型電晶體MN4截止,第二控制電壓V2則等同於電源訊號VDD,由此整形電路170輸出低電位的復位訊號Rs,積體電路20進入復位狀態,從而保護積體電路20中工作電路以及工作之穩定性。 At time t5, the first control voltage V1 is smaller than the turn-on voltage of the fourth N-type transistor MN4, The fourth N-type transistor MN4 is turned off, and the second control voltage V2 is equivalent to the power signal VDD, whereby the shaping circuit 170 outputs a low-potential reset signal Rs, and the integrated circuit 20 enters a reset state, thereby protecting the integrated circuit 20 Circuit and work stability.

相較於習知技術,第一N型電晶體MN1在復位過程中提高了放電速度,從而能夠有效保證復位訊號Rs中無噪音雜訊,保證積體電路20能夠準確地復位。 Compared with the prior art, the first N-type transistor MN1 increases the discharge speed during the reset process, thereby effectively ensuring noise-free noise in the reset signal Rs, and ensuring that the integrated circuit 20 can be accurately reset.

進一步,上電復位電路10中設置有低壓偵測單元,即第三N型電晶體MN3,從而在電源訊號VDD異常掉電後快速地輸出復位訊號Rs,使得積體電路20復位。 Further, the power-on reset circuit 10 is provided with a low-voltage detecting unit, that is, a third N-type transistor MN3, so that the reset signal Rs is quickly output after the power signal VDD is abnormally powered down, so that the integrated circuit 20 is reset.

請參閱圖4,其為本發明一變更實施例中上電復位電路30的電路方框圖,上電復位電路30包括輸入端301、充放電電路330、控制電路350、整形電路370以及輸出端302。該變更實施例中公開之上電復位電路30相較於前一實施例公開之上電復位電路10,並未設置參考電壓產生電路110以及低壓偵測單元(第三N型電晶體MN3),其他具體區別結構詳細記載於下文中。 Please refer to FIG. 4 , which is a circuit block diagram of a power-on reset circuit 30 according to a modified embodiment of the present invention. The power-on reset circuit 30 includes an input terminal 301 , a charge and discharge circuit 330 , a control circuit 350 , a shaping circuit 370 , and an output terminal 302 . The electrical reset circuit 30 disclosed in the modified embodiment is different from the electrical reset circuit 10 disclosed in the previous embodiment, and the reference voltage generating circuit 110 and the low voltage detecting unit (the third N-type transistor MN3) are not disposed. Other specific differences are detailed in the following.

具體地,充放電電路330電性連接該輸入端301與整形電路370以及該控制電路150,接收該電源訊號VDD,並依據電源訊號VDD進行充電或者放電,對應輸出第一控制電壓V1至整形電路370。整形電路370電性連接該輸出端302,用於直接對該第一控制電壓V1進行放大與整形,從而獲得復位訊號Rs,且將獲得之復位訊號Rs自輸出端302輸出。控制電路150電性連接於輸出端302,用於依據復位訊號Rs輸出第二控制電壓V2至充放電電路310,以控制該充放電電路310在上電復位完成後處於低功耗狀態。 Specifically, the charging and discharging circuit 330 is electrically connected to the input terminal 301 and the shaping circuit 370 and the control circuit 150, receives the power signal VDD, and is charged or discharged according to the power signal VDD, and correspondingly outputs the first control voltage V1 to the shaping circuit. 370. The shaping circuit 370 is electrically connected to the output terminal 302 for directly amplifying and shaping the first control voltage V1 to obtain the reset signal Rs, and outputting the obtained reset signal Rs from the output terminal 302. The control circuit 150 is electrically connected to the output terminal 302 for outputting the second control voltage V2 to the charging and discharging circuit 310 according to the reset signal Rs to control the charging and discharging circuit 310 to be in a low power consumption state after the power-on reset is completed.

請參考圖5,其為本發明如圖4所示上電復位電路30之具體電路結構圖。充放電電路330包括開關電路331、充電電路332與放電電路333以及保持電路335。該開關電路331用於依據電源訊號VDD將其傳輸至充電電路332。充電電路332藉由電源訊號VDD進行充電。放電電路333用於對充電電路332提供放電通路以釋放存儲之電荷,以延遲或減緩充電電路332之充電時間。保持電路335用於在上電復位電路30上電復位完成後,使得保持充電電路331穩定地維持在完成復位狀態。 Please refer to FIG. 5, which is a detailed circuit diagram of the power-on reset circuit 30 shown in FIG. The charge and discharge circuit 330 includes a switch circuit 331, a charge circuit 332, a discharge circuit 333, and a hold circuit 335. The switch circuit 331 is configured to transmit the power to the charging circuit 332 according to the power signal VDD. The charging circuit 332 is charged by the power signal VDD. The discharge circuit 333 is used to provide a discharge path to the charging circuit 332 to release the stored charge to delay or slow down the charging time of the charging circuit 332. The hold circuit 335 is for causing the hold charging circuit 331 to be stably maintained in the completed reset state after the power reset on the power-on reset circuit 30 is completed.

具體地,開關電路331包括第四P型電晶體MP4,第四P型電晶體MP4之源極電性連接輸入端301,用於接收電源訊號VDD,第四P型電晶體MP4之閘極與汲極直接電性連接,並電性連接充電電路332與放電電路333。該第四P型電晶體MP4為二極體連接之電晶體,因此當加載於第四P型電晶體MP4之電壓大於其開啟電壓(Vth)時,其處於飽和導通狀態,從而呈現較為恆定之電阻特性。 Specifically, the switch circuit 331 includes a fourth P-type transistor MP4, and the source of the fourth P-type transistor MP4 is electrically connected to the input terminal 301 for receiving the power signal VDD, and the gate of the fourth P-type transistor MP4 The drain is directly electrically connected, and the charging circuit 332 and the discharging circuit 333 are electrically connected. The fourth P-type transistor MP4 is a diode-connected transistor, so when the voltage applied to the fourth P-type transistor MP4 is greater than its turn-on voltage (Vth), it is in a saturated conduction state, thereby exhibiting a relatively constant state. Resistance characteristics.

充電電路332包括第三電阻R3與第一電容C1,該第三電阻R3與第一電容C1自第四P型電晶體MP4之汲極依次串聯至接地端GND。其中,該第三電阻R1與第一電容C1之間的節點B作為第一控制電壓輸出端334。 The charging circuit 332 includes a third resistor R3 and a first capacitor C1. The third resistor R3 and the first capacitor C1 are sequentially connected in series from the drain of the fourth P-type transistor MP4 to the ground GND. The node B between the third resistor R1 and the first capacitor C1 serves as the first control voltage output terminal 334.

放電電路333包括第第四電阻R4、第五電阻R5及第五N型電晶體MN5。 The discharge circuit 333 includes a fourth resistor R4, a fifth resistor R5, and a fifth N-type transistor MN5.

第四電阻R5一端電性連接第四P型電晶體MP4之汲極,另一端電性連接第五電阻R5。可以理解,第四電阻R4之電阻值可以依據不同的電源訊號VDD進行調整。 One end of the fourth resistor R5 is electrically connected to the drain of the fourth P-type transistor MP4, and the other end is electrically connected to the fifth resistor R5. It can be understood that the resistance value of the fourth resistor R4 can be adjusted according to different power signal VDD.

第五電阻R5用於對電源訊號VDD滯後偵測,一端電性連接第四電阻R4,另外一端電性連接第五N型電晶體MN5。第五N型電晶體MN5的閘極電性連接控制電路350,第五N型電晶體MN5之汲極電性連接第五電阻R5,第五N型電晶體MN5之源極電性連接接地端GND。 The fifth resistor R5 is used for detecting the power signal VDD, and one end is electrically connected to the fourth resistor R4, and the other end is electrically connected to the fifth N-type transistor MN5. The gate of the fifth N-type transistor MN5 is electrically connected to the control circuit 350. The drain of the fifth N-type transistor MN5 is electrically connected to the fifth resistor R5, and the source of the fifth N-type transistor MN5 is electrically connected to the ground. GND.

保持電路335包括第五P型電晶體MP5,其中,第五P型電晶體MP5之的閘極電性連接控制電路350,第五P型電晶體MP5之汲極電性連接第四P型電晶體MP4之汲極,源極電性連接輸入端301。 The holding circuit 335 includes a fifth P-type transistor MP5, wherein the gate of the fifth P-type transistor MP5 is electrically connected to the control circuit 350, and the drain of the fifth P-type transistor MP5 is electrically connected to the fourth P-type The drain of the crystal MP4 is electrically connected to the input terminal 301.

整形電路370電性連接第一控制電壓輸出端334,用於對第一控制電壓V1進行整形。具體地,整形電路370包括依次串聯的第一反相器INV1與第二反相器INV2,即第一反相器INV1之輸入端(未標示)電性連接第一控制電壓輸出端334,第一反相器INV1之輸出端電性連接第二反相器INV2之輸入端,第二反相器INV2之輸出端電性連接輸出端302,用於輸出該復位訊號Rs。 The shaping circuit 370 is electrically connected to the first control voltage output terminal 334 for shaping the first control voltage V1. Specifically, the shaping circuit 370 includes a first inverter INV1 and a second inverter INV2 connected in series, that is, an input end (not labeled) of the first inverter INV1 is electrically connected to the first control voltage output terminal 334, An output terminal of the inverter INV1 is electrically connected to the input end of the second inverter INV2, and an output terminal of the second inverter INV2 is electrically connected to the output terminal 302 for outputting the reset signal Rs.

控制電路350電性連接輸出端302,用於在依據復位訊號Rs輸出該第二控制電壓V2。控制電路350包括第三反相器INV3。第三反相器INV3之輸入端351電性連接輸出端302,第三反相器INV3之輸出端352電性連接第五P型電晶體MP5之閘極與第五N型電晶體MN5之閘極,用於輸出該底而控制電壓V2,以控制第五P型電晶體MP5與第五N型電晶體MN5導通或者截止。 The control circuit 350 is electrically connected to the output end 302 for outputting the second control voltage V2 according to the reset signal Rs. The control circuit 350 includes a third inverter INV3. The input end 351 of the third inverter INV3 is electrically connected to the output end 302, and the output end 352 of the third inverter INV3 is electrically connected to the gate of the fifth P-type transistor MP5 and the gate of the fifth N-type transistor MN5. The pole is used to output the bottom and control the voltage V2 to control the fifth P-type transistor MP5 and the fifth N-type transistor MN5 to be turned on or off.

請參閱圖6,其為如圖4-5所示上電復位電路30中對應節點輸出端之電壓波形圖,其中VDD表示輸入端301接收之電源訊號VDD之波形圖,V1表示第一控制電壓輸出端334輸出的第一控制電壓V1之波形圖,Rs表示輸出端302輸出之復位訊號Rs之波形圖,V2表示第二控制電壓V2之波形圖。現結合圖2具體說明上電復位電路10 以之工作過程。 Please refer to FIG. 6 , which is a voltage waveform diagram of the output terminal of the corresponding node in the power-on reset circuit 30 shown in FIG. 4-5 , where VDD represents a waveform diagram of the power signal VDD received by the input terminal 301, and V1 represents the first control voltage. A waveform diagram of the first control voltage V1 outputted from the output terminal 334, Rs represents a waveform diagram of the reset signal Rs outputted from the output terminal 302, and V2 represents a waveform diagram of the second control voltage V2. The power-on reset circuit 10 will be specifically described with reference to FIG. 2 . Work with it.

在t1時刻,積體電路20(請參閱圖4)開始上電,電源訊號VDD自零電位(0)開始升高。 At time t1, the integrated circuit 20 (see FIG. 4) starts to be powered up, and the power signal VDD rises from zero potential (0).

在t2時刻,當電源訊號VDD大於Vth時,其中Vth表示P型電晶體或者N型電晶體之開啟電壓,第四P型電晶體MP4導通,電源訊號VDD藉由第四P型電晶體MP4傳輸至充電電路332,並對第一電容C1開始充電,由此,第一控制電壓輸出端334輸出之第一控制電壓V1開始自零電位逐漸升高。同時,由於第一控制電壓V1還未達到使得整形電路370反轉之電壓值,由此,整形電路370輸出與第一控制電壓V1相同相位之低電位復位訊號Rs,由此,積體電路20開始處於進入復位狀態。 At time t2, when the power signal VDD is greater than Vth, where Vth represents the turn-on voltage of the P-type transistor or the N-type transistor, the fourth P-type transistor MP4 is turned on, and the power signal VDD is transmitted by the fourth P-type transistor MP4. The charging circuit 332 starts charging the first capacitor C1, whereby the first control voltage V1 outputted by the first control voltage output terminal 334 starts to gradually increase from the zero potential. At the same time, since the first control voltage V1 has not reached the voltage value that causes the shaping circuit 370 to reverse, the shaping circuit 370 outputs the low potential reset signal Rs having the same phase as the first control voltage V1, whereby the integrated circuit 20 Start to enter the reset state.

對應地,控制電路350之第三反相器INV3係用於對復位訊號Rs進行反相,即第二控制訊號訊號V2為高電位,則第五N型電晶體MN5處於導通,則放電電路333形成放電通路,從而對充電電路331進行放電,以減緩充電電路331之充電速度。第五P型電晶體MP5在高電位之第二控制訊號V2控制下處於截止狀態。 Correspondingly, the third inverter INV3 of the control circuit 350 is used to invert the reset signal Rs, that is, the second control signal signal V2 is high, and the fifth N-type transistor MN5 is turned on, and the discharge circuit 333 A discharge path is formed to discharge the charging circuit 331 to slow down the charging speed of the charging circuit 331. The fifth P-type transistor MP5 is in an off state under the control of the high potential second control signal V2.

在t3時刻,當電源訊號VDD逐漸升高並穩定於後,充電電路131中第一電容C1上的第一控制電壓V1大於整形電路370之反轉電壓,從而使得整形電路370輸出一高電位之復位訊號Rs,由此,積體電路20復位完成,進入穩定之工作狀態。即積體電路20在t1至t3時刻之時間段內的復位時間內處於復位狀態。 At time t3, after the power signal VDD gradually rises and stabilizes, the first control voltage V1 on the first capacitor C1 in the charging circuit 131 is greater than the reverse voltage of the shaping circuit 370, so that the shaping circuit 370 outputs a high potential. The reset signal Rs is thereby completed, and the integrated circuit 20 is reset and enters a stable operating state. That is, the integrated circuit 20 is in the reset state during the reset time period from the time t1 to time t3.

對應地,在復位訊號Rs為高電位時,第二控制電壓V2為低電位,則第五N型電晶體MN5截止,則放電電路333之放電通路段開,停 止對充電電路331之放電。第五P型電晶體MP5在低電位之第二控制訊號V2控制下導通,由此,電源訊號VDD經由第五P型電晶體MP5對充電電路331充電,從而保持充電電路331中第一控制電壓V1穩定地維持在高電位狀態,使得上電復位電路30輸出穩定之高電位復位訊號Rs。 Correspondingly, when the reset signal Rs is high, the second control voltage V2 is low, and the fifth N-type transistor MN5 is turned off, and the discharge path of the discharge circuit 333 is turned on and off. The discharge to the charging circuit 331 is stopped. The fifth P-type transistor MP5 is turned on under the control of the low potential second control signal V2, whereby the power signal VDD charges the charging circuit 331 via the fifth P-type transistor MP5, thereby maintaining the first control voltage in the charging circuit 331. V1 is stably maintained at a high potential state, so that the power-on reset circuit 30 outputs a stable high-potential reset signal Rs.

相較於習知技術,第五N型電晶體MN5在復位完成後即處於截止狀態,使得放電電路333電性斷開而無電流通過,由此,放電電路333在復位完成後並不產生功耗,從而有效降低了上電復位電路之靜電功耗,同時保證復位訊號Rs無雜訊。 Compared with the prior art, the fifth N-type transistor MN5 is in an off state after the reset is completed, so that the discharge circuit 333 is electrically disconnected without current passing, whereby the discharge circuit 333 does not generate work after the reset is completed. The power consumption is effectively reduced, and the static power consumption of the power-on reset circuit is effectively reduced, and the reset signal Rs is guaranteed to have no noise.

需要說明的係,由於該變更實施例中並未設置低壓偵測對應之功能電路,由此,本實施例僅對其上電復位過程作介紹。 It should be noted that since the functional circuit corresponding to the low voltage detection is not provided in the modified embodiment, the present embodiment only introduces the power-on reset process.

上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,本發明之範圍並不以上述實施方式為限,舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 As described above, the present invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and the scope of the present invention is not limited to the above-described embodiments, and equivalent modifications or variations made by those skilled in the art in light of the spirit of the present invention are It should be covered by the following patent application.

10‧‧‧上電復位電路 10‧‧‧Power-on reset circuit

101‧‧‧輸入端 101‧‧‧ input

102‧‧‧輸出端 102‧‧‧output

110‧‧‧參考電壓產生電路 110‧‧‧reference voltage generating circuit

R1‧‧‧第一電阻 R1‧‧‧first resistance

MP1‧‧‧第一P型電晶體 MP1‧‧‧First P-type transistor

MP2‧‧‧第二P型電晶體 MP2‧‧‧Second P-type transistor

MP3‧‧‧第三P型電晶體 MP3‧‧‧ Third P-type transistor

MN1‧‧‧第一N型電晶體 MN1‧‧‧First N-type transistor

MN2‧‧‧第二N型電晶體 MN2‧‧‧Second N-type transistor

MN3‧‧‧第三N型電晶體 MN3‧‧‧ Third N-type transistor

MN4‧‧‧第四N型電晶體 MN4‧‧‧4th N-type transistor

R2‧‧‧第二電阻 R2‧‧‧second resistance

111‧‧‧參考電壓輸出端 111‧‧‧reference voltage output

130‧‧‧充放電電路 130‧‧‧Charge and discharge circuit

131‧‧‧開關電路 131‧‧‧Switch circuit

132‧‧‧充電電路 132‧‧‧Charging circuit

133‧‧‧放電電路 133‧‧‧Discharge circuit

134‧‧‧第一控制電壓輸出端 134‧‧‧First control voltage output

R3‧‧‧第三電阻 R3‧‧‧ third resistor

R4‧‧‧第四電阻 R4‧‧‧fourth resistor

R5‧‧‧第五電阻 R5‧‧‧ fifth resistor

150‧‧‧控制電路 150‧‧‧Control circuit

151‧‧‧第二控制電壓輸出端 151‧‧‧second control voltage output

170‧‧‧整形電路 170‧‧‧Shaping circuit

INV1‧‧‧第一反相器 INV1‧‧‧First Inverter

INV2‧‧‧第二反相器 INV2‧‧‧Second inverter

INV3‧‧‧第三反相器 INV3‧‧‧ third inverter

171‧‧‧低壓偵測端 171‧‧‧Low-voltage detection terminal

A、B、C、D‧‧‧節點 A, B, C, D‧‧‧ nodes

Claims (18)

一種上電復位電路,用於在自接收到電源訊號開始之一時間段輸出一復位訊號,包括輸入端、充放電電路、整形電路以及輸出端,該輸入端用於接收該電源訊號,該電源訊號對該充放電電路進行充電,且該充電電路對應輸出一第一控制電壓,該整形電路用於對依據該第一控制訊號獲得一復位訊號,該復位訊號自該輸出端輸出,其中,該充放電電路包括充電電路與放電電路,該充電電路用於依據該電源訊號進行充電,該放電電路在該充電電路充電之過程中對該充電電路進行放電,以減緩該放電電路之充電速度,降低該第一控制電壓與復位訊號之噪音訊號;該充電電路包括第三電阻、第一電容與第一控制電壓輸出端,該第三電阻一端接收該電源訊號,另一端電性連接該第一控制電壓輸出端,該第一電容一端電性連接該第一控制電壓輸出端,另一端電性連接接地端。 A power-on reset circuit is configured to output a reset signal, including an input end, a charge and discharge circuit, a shaping circuit and an output end, for receiving the power signal, the power source is received from the beginning of receiving the power signal, and the input terminal is configured to receive the power signal, the power source The charging circuit charges the charging and discharging circuit, and the charging circuit outputs a first control voltage, and the shaping circuit is configured to obtain a reset signal according to the first control signal, and the reset signal is output from the output end, wherein the reset signal is outputted from the output end, wherein the reset signal is outputted from the output terminal The charging and discharging circuit comprises a charging circuit and a discharging circuit, wherein the charging circuit is configured to perform charging according to the power signal, and the discharging circuit discharges the charging circuit during charging of the charging circuit to slow down the charging speed of the discharging circuit and reduce The first control voltage and the noise signal of the reset signal; the charging circuit includes a third resistor, a first capacitor and a first control voltage output end, the third resistor receives the power signal at one end, and the other end is electrically connected to the first control a voltage output end, the first capacitor is electrically connected to the first control voltage output end, and the other end is electrically A ground terminal. 如請求項1所述之上電復位電路,其中,該上電復位電路還包括參考電壓產生電路,該參考電壓產生電路電性連接該輸入端以及該充放電電路,用於自該輸入端接收該電源訊號,並且依據該電源訊號輸出一參考電壓至該充放電電路,以控制該充放電電路開始充電及放電。 The power-on reset circuit of claim 1, wherein the power-on reset circuit further includes a reference voltage generating circuit electrically connected to the input terminal and the charging and discharging circuit for receiving from the input terminal The power signal outputs a reference voltage to the charging and discharging circuit according to the power signal to control the charging and discharging circuit to start charging and discharging. 如請求項1所述之上電復位電路,其中,該參考電壓產生電路包括第一電阻、第一P型電晶體、第一N型電晶體以及第二電阻與參考電壓輸出端,該第一電阻一端電性連接該輸入端,另一端電性連接該第一P型之源極,該第一P型電晶體之閘極與汲極直接電性連接於該參考電壓輸出端,該第一N型電晶體之閘極與汲極直接電性連接於該參考電壓輸出端,該第一N型電晶體之源極電性連接該第二電阻,該第二電阻一端電性連接該第一N型電晶體,另一端連接接地端,該該參考電壓輸出端用於輸出該參考電 壓。 The electrical reset circuit of claim 1, wherein the reference voltage generating circuit comprises a first resistor, a first P-type transistor, a first N-type transistor, and a second resistor and a reference voltage output, the first One end of the resistor is electrically connected to the input end, and the other end is electrically connected to the source of the first P-type, and the gate and the drain of the first P-type transistor are directly electrically connected to the reference voltage output end, the first The gate and the drain of the N-type transistor are directly electrically connected to the reference voltage output end, and the source of the first N-type transistor is electrically connected to the second resistor, and the second resistor is electrically connected to the first end. N-type transistor, the other end is connected to the ground, and the reference voltage output is used to output the reference Pressure. 如請求項3所述之上電復位電路,其中,該第一電阻與該第二電阻之電阻值相同,且該第一P型電晶體與該第一N型電晶體之導通電阻相同。 The electrical reset circuit of claim 3, wherein the first resistor and the second resistor have the same resistance value, and the first P-type transistor has the same on-resistance as the first N-type transistor. 如請求項1所述之上電復位電路,其中,該充放電電路還包括開關電路,用於在該參考電壓之控制下選擇性地將電源訊號傳輸至該充電電路,該開關電路包括第二P型電晶體,第二P型電晶體之閘極電性連接參考電壓輸出端,用於接收該參考電壓,第二P型電晶體之源極電性連接該輸入端,第二P型電晶體之汲極電性連接該第三電阻。 The electrical reset circuit of claim 1, wherein the charge and discharge circuit further comprises a switch circuit for selectively transmitting a power signal to the charging circuit under the control of the reference voltage, the switch circuit comprising a second a P-type transistor, the gate of the second P-type transistor is electrically connected to the reference voltage output terminal for receiving the reference voltage, and the source of the second P-type transistor is electrically connected to the input terminal, and the second P-type battery The anode of the crystal is electrically connected to the third resistor. 如請求項1所述之上電復位電路,其中,該放電電路包括第四電阻、第五電阻、第二N型電晶體,該第四電阻一端電性連接該第三電阻接收電源訊號之一端,另一端電性連接該第五電阻,該第五電阻一端電性連接第四電阻,另外一端電性連接該第二N型電晶體,第二N型電晶體的閘極電性連接參考電壓輸出端,第二N型電晶體之汲極電性連接第五電阻,第二N型電晶體之源極電性連接該接地端。 The electrical reset circuit of claim 1, wherein the discharge circuit comprises a fourth resistor, a fifth resistor, and a second N-type transistor, wherein the fourth resistor is electrically connected to one end of the third resistor receiving power signal. The other end is electrically connected to the fifth resistor, the fifth resistor is electrically connected to the fourth resistor at one end, the other end is electrically connected to the second N-type transistor, and the gate of the second N-type transistor is electrically connected to the reference voltage. The output terminal, the second N-type transistor is electrically connected to the fifth resistor, and the source of the second N-type transistor is electrically connected to the ground. 如請求項6所述之上電復位電路,其中,該放電電路還包括第三N型電晶體作為電源訊號之低壓偵測,該第三N型電晶體之閘極電性連接整形電路,該第三N型電晶體之汲極與源極分別電性連接第四電阻之兩端,該第三N型電晶體在偵測到電源訊號低於預定閾值時提高該放電電路的放電速度。 The electrical reset circuit of claim 6, wherein the discharge circuit further comprises a third N-type transistor as a low voltage detection of the power signal, and the gate of the third N-type transistor is electrically connected to the shaping circuit, The drain and the source of the third N-type transistor are electrically connected to the two ends of the fourth resistor, respectively, and the third N-type transistor increases the discharge speed of the discharge circuit when the power signal is detected to be lower than a predetermined threshold. 如請求項6所述之上電復位電路,其中,該上電復位電路還包括控制電路,控制電路電性連接於參考電壓輸出端與第一控制電壓輸出端,用於在參考電壓與第一控制電壓之控制下選擇性輸出電源訊號以及第二控制電壓。 The power-on reset circuit of claim 6, wherein the power-on reset circuit further comprises a control circuit electrically connected to the reference voltage output terminal and the first control voltage output terminal for using the reference voltage and the first The power supply signal and the second control voltage are selectively output under the control of the control voltage. 如請求項8所述之上電復位電路,其中,該控制電路包括第三P型電晶體與第四N型電晶體,第三P型電晶體之閘極電性連接該參考電壓輸出端, 源極電性連接該輸入端,汲極電性連接第四N型電晶體,第四N型電晶體之閘極電性連接第一控制電壓輸出端,汲極電性連接第三P型電晶體之汲極,源極連接該接地端,其中,第三P型電晶體汲極與第四N型電晶體之汲極之間的節點作為第二控制電壓輸出端,用於輸出該第二控制電壓,該第二控制電壓輸出端電性連接該整形電路。 The electrical reset circuit of claim 8, wherein the control circuit comprises a third P-type transistor and a fourth N-type transistor, wherein a gate of the third P-type transistor is electrically connected to the reference voltage output terminal, The source is electrically connected to the input end, the drain is electrically connected to the fourth N-type transistor, the gate of the fourth N-type transistor is electrically connected to the first control voltage output end, and the drain is electrically connected to the third P-type electric a drain of the crystal, the source being connected to the ground, wherein a node between the drain of the third P-type transistor and the drain of the fourth N-type transistor serves as a second control voltage output for outputting the second The control voltage is electrically connected to the shaping circuit. 如請求項8所述之上電復位電路,其中,該整形電路包括依次串聯的第一反相器、第二反相器與第三反相器,該第一反相器之輸入端電性連接第二控制電壓輸出端,該第一反相器之輸出端電性連接該第二反相器之輸入端,該第二反相器之輸出端電性連接該第三反相器之輸入端,該第三反相器之輸出端電性連接該輸出端。 The electrical reset circuit of claim 8, wherein the shaping circuit comprises a first inverter, a second inverter and a third inverter connected in series, and the input end of the first inverter is electrically Connecting the second control voltage output end, the output end of the first inverter is electrically connected to the input end of the second inverter, and the output end of the second inverter is electrically connected to the input of the third inverter The output end of the third inverter is electrically connected to the output end. 如請求項10所述之上電復位電路,其中,該第二反相器之輸出端作為低壓偵測端,且該低壓偵測端與該第三N型電晶體之閘極電性連接。 The power-on reset circuit of claim 10, wherein the output of the second inverter is a low-voltage detection terminal, and the low-voltage detection terminal is electrically connected to the gate of the third N-type transistor. 如請求項1所述之上電復位電路,其中,該充電電路包括第三電阻、第一電容以及第一控制電壓輸出端,該第三電阻一端接收該電源訊號,另一端電性連接該第一控制電壓輸出端,該第一電容一端電性連接該第一控制電壓輸出端,另一端電性連接接地端,該第一控制電壓輸出端用於輸出該第一控制電壓。 The electrical reset circuit of claim 1, wherein the charging circuit comprises a third resistor, a first capacitor, and a first control voltage output end, the third resistor receiving the power signal at one end and electrically connecting the other end a control voltage output end, the first capacitor is electrically connected to the first control voltage output end, and the other end is electrically connected to the ground end, and the first control voltage output end is used for outputting the first control voltage. 如請求項12所述之上電復位電路,其中,該充放電電路還包括一開關電路,該開關電包括第四P型電晶體,該第四P型電晶體之源極電性連接輸入端,用於接收電源訊號,該第四P型電晶體之閘極與汲極直接電性連接該充電電路。 The electrical reset circuit of claim 12, wherein the charge and discharge circuit further comprises a switch circuit, the switch circuit comprising a fourth P-type transistor, the source of the fourth P-type transistor being electrically connected to the input end And for receiving a power signal, the gate and the drain of the fourth P-type transistor are directly electrically connected to the charging circuit. 如請求項12所述之上電復位電路,其中,該上電復位電路還包括一控制電路,該控制電路電性連接於輸出端,用於依據復位訊號輸出該第二控制電壓,該控制電路包括一反相器,該反相器之輸入端電性連接輸出端,該反相器之輸出端電性連接用於輸出該第二控制電壓,該第二控制電 壓與該復位訊號之相位相反。 The power-on reset circuit of claim 12, wherein the power-on reset circuit further includes a control circuit electrically connected to the output terminal for outputting the second control voltage according to the reset signal, the control circuit An inverter is included, and an input end of the inverter is electrically connected to the output end, and an output end of the inverter is electrically connected for outputting the second control voltage, and the second control circuit is The voltage is opposite to the phase of the reset signal. 如請求項14所述之上電復位電路,其中,該充放電電路還包括一保持電路,該保持電路包括第五P型電晶體,其中,該第五P型電晶體之的閘極電性連接該第二控制電壓輸出端,第五P型電晶體之汲極電性連接第五P型電晶體之汲極,源極電性連接該輸入端。 The electrical reset circuit of claim 14, wherein the charge and discharge circuit further comprises a holding circuit, the holding circuit comprising a fifth P-type transistor, wherein the gate of the fifth P-type transistor is electrically Connected to the second control voltage output terminal, the drain of the fifth P-type transistor is electrically connected to the drain of the fifth P-type transistor, and the source is electrically connected to the input end. 如請求項14所述之上電復位電路,其中,該放電電路包括第四電阻、第五電阻、第五N型電晶體,該第四電阻一端電性連接該第三電阻接收電源訊號之一端,另一端電性連接該第五電阻,該第五電阻一端電性連接第四電阻,另外一端電性連接該第五N型電晶體,第五N型電晶體的閘極電性連接該第二控制電壓輸出端,第五N型電晶體之汲極電性連接第五電阻,第二N型電晶體之源極電性連接該接地端。 The electrical reset circuit of claim 14, wherein the discharge circuit comprises a fourth resistor, a fifth resistor, and a fifth N-type transistor, wherein the fourth resistor is electrically connected to one end of the third resistor receiving power signal. The other end is electrically connected to the fifth resistor, the fifth resistor is electrically connected to the fourth resistor, and the other end is electrically connected to the fifth N-type transistor, and the gate of the fifth N-type transistor is electrically connected to the first resistor. The second N-type transistor is electrically connected to the fifth resistor, and the source of the second N-type transistor is electrically connected to the ground. 如請求項12所述之上電復位電路,其中,該整形電路電性連接該第一控制電壓輸出端,用於對第一控制電壓進行放大與整形後形成該復位訊號,該整形電路包括依次串聯的第一反相器與第二反相器,該第一反相器之輸入端電性連接該第一控制電壓輸出端,該第一反相器之輸出端電性連接該第二反相器之輸入端,該第二反相器之輸出端電性連接接該輸出端,用於輸出該復位訊號。 The electrical reset circuit of claim 12, wherein the shaping circuit is electrically connected to the first control voltage output terminal for amplifying and shaping the first control voltage to form the reset signal, wherein the shaping circuit comprises a first inverter connected in series with a second inverter, wherein an input end of the first inverter is electrically connected to the first control voltage output end, and an output end of the first inverter is electrically connected to the second reverse The output end of the phase converter is electrically connected to the output end of the second inverter for outputting the reset signal. 如請求項17所述之上電復位電路,其中,該第一反相器為施密特觸發器。 The electrical reset circuit of claim 17, wherein the first inverter is a Schmitt trigger.
TW103141529A 2014-11-28 2014-11-28 Power on reset circuit TWI543527B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220006002A (en) 2020-07-07 2022-01-14 윈본드 일렉트로닉스 코포레이션 Power supply control circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220006002A (en) 2020-07-07 2022-01-14 윈본드 일렉트로닉스 코포레이션 Power supply control circuit
US11502600B2 (en) 2020-07-07 2022-11-15 Windbond Electronics Corp. Power supply control circuit

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