CN104561929B - MOCVD (Metal Organic Chemical Vapor Deposition) reaction system - Google Patents
MOCVD (Metal Organic Chemical Vapor Deposition) reaction system Download PDFInfo
- Publication number
- CN104561929B CN104561929B CN201510007486.6A CN201510007486A CN104561929B CN 104561929 B CN104561929 B CN 104561929B CN 201510007486 A CN201510007486 A CN 201510007486A CN 104561929 B CN104561929 B CN 104561929B
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- Prior art keywords
- mocvd
- baffle plate
- reaction cavity
- isolation
- response systems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 43
- 238000005229 chemical vapour deposition Methods 0.000 title abstract description 4
- 239000002184 metal Substances 0.000 title abstract 2
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims description 33
- 239000011521 glass Substances 0.000 claims description 9
- 230000003028 elevating effect Effects 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 6
- 239000002699 waste material Substances 0.000 abstract description 13
- 239000000428 dust Substances 0.000 abstract description 12
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000007664 blowing Methods 0.000 abstract 4
- 238000007599 discharging Methods 0.000 abstract 4
- 230000002159 abnormal effect Effects 0.000 abstract 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 43
- 230000012010 growth Effects 0.000 description 12
- 239000000306 component Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses an MOCVD (Metal Organic Chemical Vapor Deposition) reaction system. The MOCVD reaction system comprises a reaction cavity body, a slide disc, a heating component, a top cover, a separating baffle, tail-gas discharging holes and an observation window, wherein the slide disc and the heating component are arranged on the axis of the reaction cavity body; the top cover is arranged at the top part of the reaction cavity body; the separating baffle is arranged under the top cover; the tail-gas discharging holes are arranged at the bottom part of the reaction cavity body; the observation window is arranged at the side wall of the reaction cavity body. The MOCVD reaction system is characterized in that blowing devices are additionally arranged at the position of the tail-gas discharging hole and comprise blowing pipes and cleaning baffles; and pipe openings of the blowing pipes correspond to hole openings of the tail-gas discharging holes in a one-by-one manner. The MOCVD reaction system disclosed by the invention has the advantages that by matching use of the blowing pipes and the cleaning baffle, waste materials and dust and the like after each RUN grows completely are effectively cleaned, the furnace-disassembling maintenance period is prolonged from the conventional 50-100 RUNs to more than 500 RUNs, the occurrence frequency of abnormal wavelength, abnormal surface and poor wavelength uniformity is effectively reduced, and simultaneously the operation rate of a machine platform is increased.
Description
Technical field
The present invention relates to a kind of gas phase deposition technology, more particularly it relates to a kind of Metallo-Organic Chemical Vapor is heavy
Product (MOCVD) response system.
Background technology
Metal-organic chemical vapor deposition equipment（MOCVD）It is in vapor phase epitaxial growth（VPE）On the basis of grow up
A kind of chemical vapor deposition method.It is made with III, the organic compound of II races element and V, the hydride of VI race's element etc.
For the reacting gas of crystal growth, epitaxial deposition work is carried out in pyrolysis mode in Sapphire Substrate or other substrates
Skill, grows the epitaxial material of various iii-vs, VI compound semiconductors of II- and their multivariate solid solution.
Crystal growth generally in MOCVD systems is typically in normal pressure or low pressure（10~100Torr）Lead to down H2Or N2Cold wall
Quartz（Rustless steel）Carry out in reaction chamber, underlayer temperature is 500 ~ 1200 DEG C, with radio frequency induction or heat radiation heating slide glass dish（Lining
Bottom substrate is above load plate）, H2Or N2Metallorganics are carried to vitellarium by the fluid supply bubbling of temperature-controllable.Different
Design of the manufacturer of MOCVD device to reaction chamber is also different, by taking the MOCVD of VEECO companies production as an example, such as Fig. 1 ~
Shown in 3, existing MOCVD systems include reaction cavity 103, the slide glass dish on reaction cavity axle center（Not shown in figure）With
Heating component 101, the top cover at the top of reaction cavity（Not shown in figure）, isolation baffle plate below top cover
（shutter）105th, located at the tail gas venthole 104 and the observation window located at reaction chamber body sidewall of reaction cavity bottom（view
port）102.Before MOCVD system epitaxial growths, shutter is lowered by the elevating lever 105a of isolation baffle plate, positioned at heating group
Slide glass dish on part 101 can come into from reaction chamber or spread out of；During epitaxial growth, shutter is again by the liter of control isolation baffle plate
Drop bar 105a rises, and protects observation window；After epitaxial growth is complete, shutter is lowered again.
As the reaction chamber of MOCVD growing system core components, through the epitaxial growth of a period of time, reaction particles
Shape waste material, residue of substrate film flying etc. are remained in around base plate, and are attached on the venthole of tail gas, and then block outlet
Hole, causes the air-flow of reaction chamber obstructed and unstable, causes the turbulent flow at edge and the vortex at center drastically to become strong, causes wavelength
The problems such as exception, surface abnormalities, wavelength uniformity difference, therefore, every 50 ~ 100 stoves（RUN）It is accomplished by tearing reaction chamber open, carries out
The cleaning of reaction chamber, frequently tears stove open and can expend the time, reduces board mobility, lifts production cost etc..
The content of the invention
In order to solve above-mentioned deficiency, the invention provides a kind of MOCVD response systems, which includes：Reaction cavity, located at anti-
Answer slide glass dish on cavity axle center and heating component, the top cover at the top of reaction cavity, the isolation baffle plate below top cover,
Located at the tail gas venthole and the observation window located at reaction chamber body sidewall of reaction cavity bottom, it is characterised in that：It is described every
Set up blow device below baffle plate, the blow device includes gas blow pipe and cleaning baffle plate, the mouth of pipe of the gas blow pipe with
The aperture of the tail gas venthole corresponds.
Preferably, the cleaning baffle plate is connected on the tube wall of the gas blow pipe.
Preferably, the gas blow pipe is hollow cylindrical, and the cleaning baffle plate is cubic column.
Preferably, the gas blow pipe is used to be passed through gases at high pressure.
Preferably, the blow device is uniformly arranged on the periphery of the slide glass dish and heating component.
Preferably, the blow device be located at the isolation baffle plate lower section, its lifting with isolation baffle plate and lift,
Rotate with the rotation of isolation baffle plate.
Preferably, the blow device is at least provided with 4 groups.
Preferably, the isolation baffle plate is also included for controlling the elevating lever of isolation baffle plate lifting and being used to control isolation
The rotary shaft of baffle plate rotation.
Preferably, the rotary shaft has fulcrum, and on the axial line of the reaction cavity.
The present invention adopts and the blow device being made up of gas blow pipe and cleaning baffle plate is set up in MOCVD response systems, wherein
Gas blow pipe is used to be passed through gases at high pressure, when rotation is to position corresponding with tail gas venthole, can effectively remove waste material, dust
Deng, and the cleaning baffle plate being connected on the tube wall of gas blow pipe, for waste material, dust etc. being cleaned to tail gas in rotary course
Pore position, thus by gas blow pipe with cleaning baffle plate collocation use, so as to effectively each RUN has been grown waste material,
Dust etc. is cleared up, and will be torn stove maintenance period open and is promoted to 500 more than RUN from 50 ~ 100 conventional RUN, effectively reduces ripple
Long exception, surface abnormalities, the occurrence frequency of wavelength uniformity difference, meanwhile, lift the mobility of board.
Description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and constitutes a part for description, the reality with the present invention
Applying example is used for explaining the present invention together, is not construed as limiting the invention.Additionally, accompanying drawing data be description summary, be not by
Ratio is drawn.
Schematic perspective view before Fig. 1 is existing MOCVD response systems epitaxial growth or after growth.
Schematic perspective view when Fig. 2 is existing MOCVD response systems epitaxial growth.
Fig. 3 is the schematic top plan view of existing MOCVD response systems.
Fig. 4 is the schematic perspective view of the MOCVD response systems of the present invention.
Fig. 5 is the schematic top plan view of the MOCVD response systems of the present invention.
Fig. 6 is the schematic perspective view of the blow device of the MOCVD response systems of the present invention.
Accompanying drawing is marked：101：Heating component；102：Observation window；103：Reaction cavity；104：Tail gas venthole；105：Isolation
Baffle plate；105a：The elevating lever of isolation baffle plate；105b：The rotary shaft of isolation baffle plate；105c：The fulcrum of rotary shaft；106：Purging dress
Put；106a：Gas blow pipe；106b：Clean baffle plate；107：Waste material, dust；108：Gases at high pressure.
Specific embodiment
The MOCVD response systems of the present invention are described in detail with reference to schematic diagram, whereby to the present invention how
Application technology means solving technical problem, and reach technique effect realize that process can fully understand and implement according to this.Need
Know, embodiments of the present invention not limited to this.
As shown in Fig. 4 ~ 5, a preferred embodiment of the present invention provides a kind of MOCVD response systems, including：Reaction cavity
103rd, the slide glass dish on reaction cavity axle center（Not shown in figure）With heating component 101, the top at the top of reaction cavity
Lid（Not shown in figure）, isolation baffle plate below top cover（shutter）105th, located at the tail gas outlet of reaction cavity bottom
Hole 104 and the observation window 102 located at reaction chamber body sidewall；Blow device 106 is set up in the lower section of the isolation baffle plate 105,
The blow device 106 is made up of the cleaning baffle plate 106b of the gas blow pipe 106a and cubic column of hollow cylindrical.
Every stove is carried out using MOCVD response systems（Each RUN）Extension start growth when, isolation baffle plate 105 can rise,
Protection observation window；After having grown, isolation baffle plate 105 can lower.The present embodiment by the lower section of isolation baffle plate 105, i.e.,
Blow device 106, and isolation baffle plate 105 are set up except including for controlling isolation gear in the position of the tail gas venthole 104
The elevating lever 105a of plate lifting, is also included for controlling rotary shaft 105b that isolation baffle plate rotates, thus by control isolation gear
The lifting or rotation of plate, then blow device not only can lift with the lifting of isolation baffle plate, can also be with the rotation of isolation baffle plate
Under turning to drive, centered on the fulcrum 105c of rotary shaft（On the axial line of the reaction cavity）, it is fixed angle
Rotation.
Further, as shown in Fig. 4 ~ 5, the present invention blow device 106 at least provided with 4 groups, in the present embodiment preferably 8
Group, its number are consistent with the number of tail gas venthole, and each group blow device has periodic intervals, is uniformly arranged on slide glass
The periphery of disk and heating component 101.As shown in fig. 6, the mouth of pipe of gas blow pipe 106a in blow device 106 and tail gas venthole
104 aperture corresponds.After MOCVD response system epitaxial growths terminate, gas blow pipe 106a can be used for pulse and be passed through high pressure gas
Body 108, in the preferred nitrogen of the present embodiment, so as to the material that waste material, dust 107 etc. are blocked tail gas venthole, to go out MOCVD anti-
Cavity is answered, into exhaust pipe；Then, baffle plate 106b is cleared up in the case where the rotary shaft of isolation baffle plate drives, carry out 45 ° every time of rotation
Turn（Number of rotation is calculated with 360 ° of numbers divided by tail gas venthole every time）, by rotation by the waste material of reaction cavity bottom,
Dust 107 is cleaned to the position of tail gas venthole 104；Then, when blow device 106 is rotated to next tail gas venthole,
Gas blow pipe 106a is passed through high pressure nitrogen, and waste material, dust 107 are cleaned out reaction cavity again, by that analogy, carries out every time 8 times
Or 8N time（N>=1 integer）Cleaning, realize effectively thoroughly cleaning waste material in MOCVD response systems, dust etc..
Knowable to above-described embodiment, a kind of MOCVD response systems that the present invention is provided, which passes through in the lower section of isolation baffle plate
Set up by gas blow pipe and the cleaning blow device that constitutes of baffle plate, wherein gas blow pipe can be passed through gases at high pressure, when rotation to and tail gas
During the corresponding position of venthole, waste material, dust etc. can be effectively removed, and the cleaning baffle plate being connected on the tube wall of gas blow pipe,
For in rotary course waste material, dust etc. being cleaned to tail gas outlet hole site, thus by gas blow pipe and cleaning baffle plate
Collocation is used, so as to the waste material that effectively grow to each RUN, dust etc. are cleared up, the blocking of reduction tail gas steam vent,
Stove maintenance period will be torn open and 500 more than RUN will be promoted to from 50 ~ 100 conventional RUN, effectively reduction wavelength exception, surface will be different
Often, the occurrence frequency of wavelength uniformity difference, meanwhile, lift the mobility of board.
It should be appreciated that above-mentioned specific embodiment is the preferred embodiments of the present invention, the scope of the present invention is not limited to
The embodiment, all any changes done according to the present invention, all belongs within this protection scope of the present invention.
Claims (6)
1. a kind of MOCVD response systems, which includes：Reaction cavity, the slide glass dish on reaction cavity axle center and heating component,
Top cover at the top of reaction cavity, the isolation baffle plate below top cover, located at reaction cavity bottom tail gas venthole with
And located at the observation window of reaction chamber body sidewall, it is characterised in that：In the lower section of the isolation baffle plate and be located at the slide glass dish and
The periphery of heating component uniformly sets up blow device, and the blow device is lifted with the lifting of isolation baffle plate, with isolation
The rotation of baffle plate and rotate；The isolation baffle plate includes the elevating lever for controlling isolation baffle plate lifting and for controlling isolation
The rotary shaft of baffle plate rotation, the rotary shaft have fulcrum, and on the axial line of the reaction cavity；The blow device
Including gas blow pipe and cleaning baffle plate, the mouth of pipe of the gas blow pipe is corresponded with the aperture of the tail gas venthole.
2. a kind of MOCVD response systems according to claim 1, it is characterised in that：The cleaning baffle plate is connected to described
On the tube wall of gas blow pipe.
3. a kind of MOCVD response systems according to claim 1, it is characterised in that：The gas blow pipe is hollow cylindrical.
4. a kind of MOCVD response systems according to claim 1, it is characterised in that：The cleaning baffle plate is cubic column.
5. a kind of MOCVD response systems according to claim 1, it is characterised in that：The gas blow pipe is used to be passed through high pressure
Gas.
6. a kind of MOCVD response systems according to claim 1, it is characterised in that：The blow device is at least provided with 4
Group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510007486.6A CN104561929B (en) | 2015-01-08 | 2015-01-08 | MOCVD (Metal Organic Chemical Vapor Deposition) reaction system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510007486.6A CN104561929B (en) | 2015-01-08 | 2015-01-08 | MOCVD (Metal Organic Chemical Vapor Deposition) reaction system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104561929A CN104561929A (en) | 2015-04-29 |
| CN104561929B true CN104561929B (en) | 2017-04-19 |
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ID=53078987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510007486.6A Active CN104561929B (en) | 2015-01-08 | 2015-01-08 | MOCVD (Metal Organic Chemical Vapor Deposition) reaction system |
Country Status (1)
| Country | Link |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420687B (en) * | 2016-01-04 | 2018-03-23 | 厦门市三安光电科技有限公司 | A kind of MOCVD systems |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202164351U (en) * | 2011-05-04 | 2012-03-14 | 广东量晶光电科技有限公司 | Metal organic chemical vapor deposition reactor |
| CN102517564A (en) * | 2011-12-16 | 2012-06-27 | 汉能科技有限公司 | Gas purging system and method in LPCVD technique cavity |
| CN202380085U (en) * | 2011-12-16 | 2012-08-15 | 汉能科技有限公司 | Gas purge system in LPCVD (low-pressure chemical vapor deposition) process chambers |
| CN202610326U (en) * | 2012-05-22 | 2012-12-19 | 中节能太阳能科技有限公司 | On-line blowing device of plate type plasma enhanced chemical vapor deposition (PECVD) coating of crystalline silicon solar cell |
| CN203382817U (en) * | 2013-07-18 | 2014-01-08 | 胡兵 | Organometallic chemical vapor deposition device |
-
2015
- 2015-01-08 CN CN201510007486.6A patent/CN104561929B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202164351U (en) * | 2011-05-04 | 2012-03-14 | 广东量晶光电科技有限公司 | Metal organic chemical vapor deposition reactor |
| CN102517564A (en) * | 2011-12-16 | 2012-06-27 | 汉能科技有限公司 | Gas purging system and method in LPCVD technique cavity |
| CN202380085U (en) * | 2011-12-16 | 2012-08-15 | 汉能科技有限公司 | Gas purge system in LPCVD (low-pressure chemical vapor deposition) process chambers |
| CN202610326U (en) * | 2012-05-22 | 2012-12-19 | 中节能太阳能科技有限公司 | On-line blowing device of plate type plasma enhanced chemical vapor deposition (PECVD) coating of crystalline silicon solar cell |
| CN203382817U (en) * | 2013-07-18 | 2014-01-08 | 胡兵 | Organometallic chemical vapor deposition device |
Also Published As
| Publication number | Publication date |
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| CN104561929A (en) | 2015-04-29 |
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Effective date of registration: 20231030 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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