CN104561929A - MOCVD (Metal Organic Chemical Vapor Deposition) reaction system - Google Patents
MOCVD (Metal Organic Chemical Vapor Deposition) reaction system Download PDFInfo
- Publication number
- CN104561929A CN104561929A CN201510007486.6A CN201510007486A CN104561929A CN 104561929 A CN104561929 A CN 104561929A CN 201510007486 A CN201510007486 A CN 201510007486A CN 104561929 A CN104561929 A CN 104561929A
- Authority
- CN
- China
- Prior art keywords
- baffle plate
- mocvd
- reaction cavity
- reactive system
- mocvd reactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 45
- 238000005229 chemical vapour deposition Methods 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 title abstract description 3
- 238000004140 cleaning Methods 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 9
- 230000003028 elevating effect Effects 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 10
- 239000002699 waste material Substances 0.000 abstract description 13
- 239000000428 dust Substances 0.000 abstract description 12
- 230000002159 abnormal effect Effects 0.000 abstract description 5
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000007664 blowing Methods 0.000 abstract 4
- 238000007599 discharging Methods 0.000 abstract 4
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 43
- 239000000306 component Substances 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses an MOCVD (Metal Organic Chemical Vapor Deposition) reaction system. The MOCVD reaction system comprises a reaction cavity body, a slide disc, a heating component, a top cover, a separating baffle, tail-gas discharging holes and an observation window, wherein the slide disc and the heating component are arranged on the axis of the reaction cavity body; the top cover is arranged at the top part of the reaction cavity body; the separating baffle is arranged under the top cover; the tail-gas discharging holes are arranged at the bottom part of the reaction cavity body; the observation window is arranged at the side wall of the reaction cavity body. The MOCVD reaction system is characterized in that blowing devices are additionally arranged at the position of the tail-gas discharging hole and comprise blowing pipes and cleaning baffles; and pipe openings of the blowing pipes correspond to hole openings of the tail-gas discharging holes in a one-by-one manner. The MOCVD reaction system disclosed by the invention has the advantages that by matching use of the blowing pipes and the cleaning baffle, waste materials and dust and the like after each RUN grows completely are effectively cleaned, the furnace-disassembling maintenance period is prolonged from the conventional 50-100 RUNs to more than 500 RUNs, the occurrence frequency of abnormal wavelength, abnormal surface and poor wavelength uniformity is effectively reduced, and simultaneously the operation rate of a machine platform is increased.
Description
Technical field
The present invention relates to a kind of gas phase deposition technology, more specifically, the present invention relates to a kind of metal organic chemical vapor deposition (MOCVD) reactive system.
Background technology
Metal-organic chemical vapor deposition equipment (MOCVD) is a kind of chemical vapor deposition method grown up on the basis of vapor phase epitaxial growth (VPE).It is the reactant gases using hydride of the organic compound of III, II race element and V, VI race's element etc. as crystal growth, in Sapphire Substrate or other substrates, carry out epitaxial deposition process in pyrolysis mode, grow the epitaxial material of various iii-v, II-VI compound semiconductor and their multivariate solid solution.
Crystal growth in usual MOCVD system is logical H under normal pressure or low pressure (10 ~ 100Torr) normally
2or N
2carry out in cold wall quartz (stainless steel) reaction chamber, underlayer temperature is 500 ~ 1200 DEG C, with radio-frequency induction or thermal radiation heating slide glass dish (substrate base is above load plate), and H
2or N
2metallorganics is carried to vitellarium by the fluid supply bubbling of temperature-controllable.The manufacturer of different MOCVD device is also different to the design of reaction chamber, for the MOCVD that VEECO company produces, as shown in Fig. 1 ~ 3, existing MOCVD system comprises reaction cavity 103, be located at slide glass dish (not shown) on reaction cavity axle center and heating component 101, be located at the top cover (not shown) at reaction cavity top, be located at isolation baffle plate (shutter) 105 below top cover, be located at the tail gas production well 104 bottom reaction cavity and be located at the viewing window (view port) 102 of reaction cavity sidewall.Before the epitaxy of MOCVD system, shutter is lowered by the elevating lever 105a isolating baffle plate, and the slide glass dish be positioned on heating component 101 can pass into from reaction chamber or spread out of; During epitaxy, shutter is gone up by the elevating lever 105a controlling isolation baffle plate again, protection viewing window; After epitaxy is complete, shutter lowers again.
As the reaction chamber of MOCVD growing system core component, through epitaxy after a while, reaction particles shape waste material, the resistates etc. of substrate film flying remains in around base plate, and be attached on the production well of tail gas, and then blocking production well, the air-flow in chamber of inducing reaction is obstructed and unstable, cause the turbulent flow at edge and the eddy current sharply grow at center, cause wavelength abnormal, surface abnormalities, the problems such as wavelength uniformity difference, therefore, just need to tear reaction chamber open every 50 ~ 100 stoves (RUN), carry out the cleaning of reaction chamber, frequently tear stove open can expend time in, reduce board mobility, promote production cost etc.
Summary of the invention
In order to solve above-mentioned deficiency, the invention provides a kind of MOCVD reactive system, it comprises: reaction cavity, be located at slide glass dish on reaction cavity axle center and heating component, be located at the top cover at reaction cavity top, be located at isolation baffle plate below top cover, be located at the tail gas production well bottom reaction cavity and be located at the viewing window of reaction cavity sidewall, it is characterized in that: set up blow device in the below of described isolation baffle plate, described blow device comprises gas blow pipe and cleaning baffle plate, the mouth of pipe of described gas blow pipe and the aperture one_to_one corresponding of described tail gas production well.
Preferably, described cleaning baffle plate is connected on the tube wall of described gas blow pipe.
Preferably, described gas blow pipe is hollow cylindrical, and described cleaning baffle plate is cubic column.
Preferably, described gas blow pipe is used for passing into high pressure gas.
Preferably, described blow device is evenly arranged at the periphery of described slide glass dish and heating component.
Preferably, described blow device is positioned at the below of described isolation baffle plate, and it is elevated along with the lifting isolating baffle plate, rotates along with the rotation of isolation baffle plate.
Preferably, described blow device at least arranges 4 groups.
Preferably, described isolation baffle plate also comprises for controlling to isolate the elevating lever of baffle plate lifting and the turning axle for controlling to isolate baffle plate rotation.
Preferably, described turning axle has fulcrum, and is positioned on the axial line of described reaction cavity.
The present invention adopts the blow device set up in MOCVD reactive system and be made up of gas blow pipe and cleaning baffle plate, wherein gas blow pipe is used for passing into high pressure gas, when rotating to the position corresponding with tail gas production well, effectively can remove waste material, dust etc., and the cleaning baffle plate be connected on the tube wall of gas blow pipe, for in rotary course by waste material, the cleaning such as dust is to tail gas production well position, so used by the collocation of gas blow pipe with cleaning baffle plate, thus effectively to the waste material that each RUN has grown, dust etc. are cleared up, 500 more than RUN are promoted to by tearing 50 ~ 100 RUN of stove maintenance intervals from routine open, effective reduction wavelength is abnormal, surface abnormalities, the occurrence frequency of wavelength uniformity difference, simultaneously, promote the mobility of board.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification sheets, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is the schematic perspective view before the epitaxy of existing MOCVD reactive system or after growth.
Schematic perspective view when Fig. 2 is existing MOCVD reactive system epitaxy.
Fig. 3 is the schematic top plan view of existing MOCVD reactive system.
Fig. 4 is the schematic perspective view of MOCVD reactive system of the present invention.
Fig. 5 is the schematic top plan view of MOCVD reactive system of the present invention.
Fig. 6 is the schematic perspective view of the blow device of MOCVD reactive system of the present invention.
Accompanying drawing marks: 101: heating component; 102: viewing window; 103: reaction cavity; 104: tail gas production well; 105: isolation baffle plate; 105a: the elevating lever of isolation baffle plate; 105b: the turning axle of isolation baffle plate; 105c: the fulcrum of turning axle; 106: blow device; 106a: gas blow pipe; 106b: cleaning baffle plate; 107: waste material, dust; 108: high pressure gas.
Embodiment
Be described in detail below in conjunction with the MOCVD reactive system of schematic diagram to the present invention, to the present invention, how utilisation technology means solve technical problem whereby, and the implementation procedure reaching technique effect can fully understand and implement according to this.Need to know, embodiments of the present invention are not limited thereto.
As shown in Fig. 4 ~ 5, a preferred embodiment of the present invention provides a kind of MOCVD reactive system, comprising: reaction cavity 103, be located at slide glass dish (not shown) on reaction cavity axle center and heating component 101, be located at the top cover (not shown) at reaction cavity top, be located at isolation baffle plate (shutter) 105 below top cover, be located at the tail gas production well 104 bottom reaction cavity and be located at the viewing window 102 of reaction cavity sidewall; Set up blow device 106 in the below of described isolation baffle plate 105, described blow device 106 is made up of the gas blow pipe 106a of hollow cylindrical and the cleaning baffle plate 106b of cubic column.
When the extension adopting MOCVD reactive system to carry out every stove (each RUN) starts to grow, isolation baffle plate 105 can rise, protection viewing window; After having grown, isolation baffle plate 105 can lower.The present embodiment is by the below at isolation baffle plate 105, namely blow device 106 is set up in the position of described tail gas production well 104, and isolation baffle plate 105 is except comprising the elevating lever 105a for controlling to isolate baffle plate lifting, also comprise the turning axle 105b for controlling to isolate baffle plate rotation, so by controlling lifting or the rotation of isolation baffle plate, then blow device not only can be elevated along with the lifting of isolation baffle plate, also can along with under the rotarily driving of isolation baffle plate, (be positioned on the axial line of described reaction cavity) centered by the fulcrum 105c of turning axle, be fixed the rotation of angle.
Further, as shown in Fig. 4 ~ 5, blow device 106 of the present invention at least arranges 4 groups, the present embodiment preferably 8 groups, the number of its number and tail gas production well is consistent, and each group blow device has periodic intervals, is evenly arranged at the periphery of slide glass dish and heating component 101.As shown in Figure 6, the mouth of pipe of the gas blow pipe 106a in blow device 106 and the aperture one_to_one corresponding of tail gas production well 104.After the epitaxy of MOCVD reactive system terminates, gas blow pipe 106a can be used for pulse and passes into high pressure gas 108, and in the present embodiment preferred nitrogen, thus material waste material, dust 107 etc. being blocked tail gas production well goes out MOCVD reaction cavity, enters exhaust pipe; Then, cleaning baffle plate 106b is under the turning axle of isolation baffle plate drives, carry out the rotation (each rotate the number of degrees calculates with 360 ° of numbers divided by tail gas production well) of each 45 °, the waste material bottom reaction cavity, dust 107 cleaned the position to tail gas production well 104 by rotation; Then, when blow device 106 rotates to next tail gas production well, gas blow pipe 106a passes into high pressure nitrogen, waste material, dust 107 are cleaned out reaction cavity again, by that analogy, carry out the cleaning of 8 times or 8N time (integer of N>=1) at every turn, realize the waste material, dust etc. that clean effectively up hill and dale in MOCVD reactive system.
From above-described embodiment, a kind of MOCVD reactive system provided by the invention, it is by setting up the blow device be made up of gas blow pipe and cleaning baffle plate in the below of isolation baffle plate, wherein gas blow pipe can pass into high pressure gas, when rotating to the position corresponding with tail gas production well, effectively can remove waste material, dust etc., and the cleaning baffle plate be connected on the tube wall of gas blow pipe, for in rotary course by waste material, the cleaning such as dust is to tail gas production well position, so used by the collocation of gas blow pipe with cleaning baffle plate, thus effectively to the waste material that each RUN has grown, dust etc. are cleared up, reduce the blocking of tail gas venting hole, 500 more than RUN are promoted to by tearing 50 ~ 100 RUN of stove maintenance intervals from routine open, effective reduction wavelength is abnormal, surface abnormalities, the occurrence frequency of wavelength uniformity difference, simultaneously, promote the mobility of board.
Should be understood that, above-mentioned specific embodiments is the preferred embodiments of the present invention, and scope of the present invention is not limited to this embodiment, and all any changes done according to the present invention, all belong within this protection scope of the present invention.
Claims (10)
1. a MOCVD reactive system, it comprises: reaction cavity, be located at slide glass dish on reaction cavity axle center and heating component, be located at the top cover at reaction cavity top, be located at isolation baffle plate below top cover, be located at the tail gas production well bottom reaction cavity and be located at the viewing window of reaction cavity sidewall, it is characterized in that: set up blow device in the below of described isolation baffle plate, described blow device comprises gas blow pipe and cleaning baffle plate, the mouth of pipe of described gas blow pipe and the aperture one_to_one corresponding of described tail gas production well.
2. a kind of MOCVD reactive system according to claim 1, is characterized in that: described cleaning baffle plate is connected on the tube wall of described gas blow pipe.
3. a kind of MOCVD reactive system according to claim 1, is characterized in that: described gas blow pipe is hollow cylindrical.
4. a kind of MOCVD reactive system according to claim 1, is characterized in that: described cleaning baffle plate is cubic column.
5. a kind of MOCVD reactive system according to claim 1, is characterized in that: described gas blow pipe is used for passing into high pressure gas.
6. a kind of MOCVD reactive system according to claim 1, is characterized in that: described blow device is evenly arranged at the periphery of described slide glass dish and heating component.
7. a kind of MOCVD reactive system according to claim 1, is characterized in that: described blow device is positioned at the below of described isolation baffle plate, and it is elevated along with the lifting isolating baffle plate, rotates along with the rotation of isolation baffle plate.
8. a kind of MOCVD reactive system according to claim 1, is characterized in that: described blow device at least arranges 4 groups.
9. a kind of MOCVD reactive system according to claim 1, is characterized in that: described isolation baffle plate also comprises for controlling to isolate the elevating lever of baffle plate lifting and the turning axle for controlling to isolate baffle plate rotation.
10. a kind of MOCVD reactive system according to claim 9, is characterized in that: described turning axle has fulcrum, and is positioned on the axial line of described reaction cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510007486.6A CN104561929B (en) | 2015-01-08 | 2015-01-08 | MOCVD (Metal Organic Chemical Vapor Deposition) reaction system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510007486.6A CN104561929B (en) | 2015-01-08 | 2015-01-08 | MOCVD (Metal Organic Chemical Vapor Deposition) reaction system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104561929A true CN104561929A (en) | 2015-04-29 |
| CN104561929B CN104561929B (en) | 2017-04-19 |
Family
ID=53078987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510007486.6A Active CN104561929B (en) | 2015-01-08 | 2015-01-08 | MOCVD (Metal Organic Chemical Vapor Deposition) reaction system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104561929B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420687A (en) * | 2016-01-04 | 2016-03-23 | 厦门市三安光电科技有限公司 | MOCVD system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202164351U (en) * | 2011-05-04 | 2012-03-14 | 广东量晶光电科技有限公司 | Metal organic chemical vapor deposition reactor |
| CN102517564A (en) * | 2011-12-16 | 2012-06-27 | 汉能科技有限公司 | Gas purging system and method in LPCVD technique cavity |
| CN202380085U (en) * | 2011-12-16 | 2012-08-15 | 汉能科技有限公司 | Gas purge system in LPCVD (low-pressure chemical vapor deposition) process chambers |
| CN202610326U (en) * | 2012-05-22 | 2012-12-19 | 中节能太阳能科技有限公司 | On-line blowing device of plate type plasma enhanced chemical vapor deposition (PECVD) coating of crystalline silicon solar cell |
| CN203382817U (en) * | 2013-07-18 | 2014-01-08 | 胡兵 | Organometallic chemical vapor deposition device |
-
2015
- 2015-01-08 CN CN201510007486.6A patent/CN104561929B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202164351U (en) * | 2011-05-04 | 2012-03-14 | 广东量晶光电科技有限公司 | Metal organic chemical vapor deposition reactor |
| CN102517564A (en) * | 2011-12-16 | 2012-06-27 | 汉能科技有限公司 | Gas purging system and method in LPCVD technique cavity |
| CN202380085U (en) * | 2011-12-16 | 2012-08-15 | 汉能科技有限公司 | Gas purge system in LPCVD (low-pressure chemical vapor deposition) process chambers |
| CN202610326U (en) * | 2012-05-22 | 2012-12-19 | 中节能太阳能科技有限公司 | On-line blowing device of plate type plasma enhanced chemical vapor deposition (PECVD) coating of crystalline silicon solar cell |
| CN203382817U (en) * | 2013-07-18 | 2014-01-08 | 胡兵 | Organometallic chemical vapor deposition device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420687A (en) * | 2016-01-04 | 2016-03-23 | 厦门市三安光电科技有限公司 | MOCVD system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104561929B (en) | 2017-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI559362B (en) | Apparatus for processing substrate | |
| CN101834119B (en) | Substrate processing apparatus | |
| CN106367805B (en) | Substrate processing apparatus | |
| CN102543689A (en) | Substrate processing apparatus, method of manufacturing substrate, and method of manufacturing semiconductor device | |
| US10240231B2 (en) | Chemical vapor deposition apparatus and its cleaning method | |
| CN107438896B (en) | Substrate processing apparatus | |
| CN106663604A (en) | Carousel batch epitaxy system | |
| CN103160814B (en) | Reaction chamber and air flow control method | |
| CN103726103A (en) | Reaction chamber | |
| CN104903994B (en) | Substrate board treatment | |
| CN104561929A (en) | MOCVD (Metal Organic Chemical Vapor Deposition) reaction system | |
| CN108630594A (en) | Substrate-treating apparatus | |
| CN104046962B (en) | A kind of axially strength drives planetary rotation device | |
| CN205443507U (en) | Long brilliant curved MO CVD equipment of wafer pinpoints | |
| JP2009038143A (en) | Vapor growth device | |
| CN103088413B (en) | Etching roasting plant | |
| KR20110088440A (en) | Vapor phase growth device of group iii nitride semiconductor | |
| JP2013069818A (en) | Vapor phase growth apparatus and method for forming crystal film | |
| CN107438895B (en) | Substrate processing apparatus | |
| CN103088412B (en) | The reacting furnace of etching roasting plant | |
| US11028474B2 (en) | Method for cleaning SiC monocrystal growth furnace | |
| JP2010196102A (en) | Vapor deposition apparatus and vapor deposition method | |
| JP4122613B2 (en) | Semiconductor manufacturing equipment | |
| CN103074600B (en) | Etching roasting plant | |
| CN220318039U (en) | Substrate tray and reaction chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231030 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |