CN105420687A - MOCVD system - Google Patents
MOCVD system Download PDFInfo
- Publication number
- CN105420687A CN105420687A CN201610000710.3A CN201610000710A CN105420687A CN 105420687 A CN105420687 A CN 105420687A CN 201610000710 A CN201610000710 A CN 201610000710A CN 105420687 A CN105420687 A CN 105420687A
- Authority
- CN
- China
- Prior art keywords
- liner plate
- mocvd system
- sub
- moving member
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract 12
- 238000013022 venting Methods 0.000 claims description 15
- 239000012634 fragment Substances 0.000 claims description 8
- 238000000407 epitaxy Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
An MOCVD system comprises a first cavity and a shell. The first cavity comprises an annular liner plate and exhaust holes formed in the annular liner plate, and the system is used for growing an epitaxy wafer. The annular liner plate is composed of multiple sub-liner plates and moving parts, the sub-liner plates are moved through the moving parts respectively, and the sub-liner plates move to clear away broken wafer pieces.
Description
Technical field
The present invention relates to semiconductor epitaxial growth, chemical gas-phase deposition system, particularly a kind of can the MOCVD of sweep debris.
Background technology
Metal-organic chemical vapor deposition equipment (MOCVD) is a kind of chemical vapor deposition method grown up on the basis of vapor phase epitaxial growth (VPE), for growing epitaxial wafer.It is the reactant gases using hydride of the organic compound of III, II race element and V, VI race's element etc. as crystal growth, in Sapphire Substrate or other substrates, carry out epitaxial deposition process in pyrolysis mode, grow the epitaxial material of various iii-v, II-VI compound semiconductor and their multivariate solid solution.
As shown in Figure 1, existing MOCVD system comprises, reaction chamber (i.e. the first chamber), venting hole and shell, the MOCVD of existing industrialization has spinfunction, high speed rotating epitaxial wafer from rotation center distance more away from, suffered centrifugal force is larger, is easy to make epitaxial wafer fly away from reaction chamber, drops into the position of pore and block.Especially, when growth 4 cun or larger sized substrate, chip size is larger, and blocking can be more serious.This blocking can cause the uneven of flow field, and needs to open reaction chamber cleaning fragment.Thus bring the instability of technique and the reduction of production capacity.
Summary of the invention
In order to solve above-mentioned deficiency, comprise the first chamber and shell, the first chamber comprises annular liner plate and venting hole, and venting hole is positioned at annular liner plate, and system is used for growing epitaxial wafer.
According to the present invention, preferably, described annular liner plate is made up of plural block liner plate and moving member, and described sub-liner plate moves respectively by moving member, and described sub-liner plate is by the mobile removing function realizing wafer debris.
According to the present invention, preferably, described sub-liner plate one end has arcuate structure, and one end that adjacent two sub-liner plates have arcuate structure connects to form cavernous structure, and described cavernous structure is corresponding with the inlet mouth of described venting hole.
According to the present invention, preferably, described venting hole is connected with vapor pipe, and described vapor pipe tube wall is distributed with a plurality of hole.
According to the present invention, preferably, below described annular liner plate, be provided with the second chamber, for carrying the wafer debris cleared up from sub-liner plate.
According to the present invention, preferably, described second chamber has chip-removal hole.
According to the present invention, preferably, described second cavity bottom has wavy fluctuating, and chip-removal hole is positioned at wavy trough, and the fragment being convenient to wafer is discharged.
According to the present invention, preferably, described chip-removal hole number is identical with moving member number.
According to the present invention, preferably, described chip-removal hole is positioned at immediately below corresponding moving member.
According to the present invention, preferably, described moving member is fixed on shell, by circuit by external control.
According to the present invention, preferably, described moving member is preferably revolving part.
A kind of MOCVD system of the present invention, compared with traditional MOCVD board, at least comprise following technique effect: can be done around revolving part by sub-liner plate and rotate, form dump angle by the rotation of sub-liner plate, change the area of cavernous structure, and fragment is poured in the second chamber from annular liner plate, thus realize not needing to open the first chamber, and the problem of clogged with fragments venting hole can be solved, improve technology stability, reduce maintenance time.Except above-mentioned beneficial effect, other beneficial effects of the present invention will embody in specification sheets embodiment.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification sheets, is used from explanation the present invention, is not construed as limiting the invention with the embodiment of the present invention one.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1: the MOCVD system schematic of prior art;
Fig. 2: the MOCVD system schematic of embodiment 1;
Fig. 3: the MOCVD system schematic of embodiment 2;
Fig. 4: the skeleton view of the MOCVD system of embodiment 2;
Fig. 5: the MOCVD system schematic of embodiment 3;
Fig. 6: the skeleton view of the MOCVD system of embodiment 3;
Fig. 7: the MOCVD system schematic of embodiment 4;
Fig. 8: the skeleton view of the MOCVD system of embodiment 4.
Mark in figure: 11, the first chamber, the 12, second chamber, 121, chip-removal hole, the 122, second cavity bottom, 21, venting hole, 22, vapor pipe, 221, hole, 3, shell, 41, the first sub-liner plate, the 42, second sub-liner plate, 431, revolving part, 432, extensible member.
Embodiment
Below in conjunction with schematic diagram, the present invention is described in detail, before proceeding to further describe the invention, should be appreciated that therefore, the present invention is not limited to following specific embodiment owing to can transform specific embodiment.It is also understood that therefore adopted embodiment is introductory, instead of restrictive because scope of the present invention is only defined by the following claims.Unless otherwise stated, the same meaning that all technology used here and scientific words and those of ordinary skill in the art generally understand.
embodiment 1
Referring to Fig. 2, the MOCVD reactive system of the present embodiment comprises: the first chamber 11 and shell 3, first chamber 11 comprise annular liner plate and venting hole 21, and venting hole 21 is positioned at annular liner plate.First chamber 11 is the reaction chamber of metal-organic chemical vapor deposition equipment, annular liner plate is made up of plural block liner plate and revolving part 431, the sub-liner plate of the present embodiment is preferably 8 pieces, two blocks of wherein adjacent liner plates are respectively the first sub-liner plate 41 and the second sub-liner plate 42, first sub-liner plate 41 is connected with revolving part 431 separately with the second sub-liner plate 42, form a removal of cell debris device, for clearing up the fragment because of operation irregularity generation in growth wafer process.Revolving part 431 is fixed on shell 3, and revolving part 431 by external control by circuit, is driven the first sub-liner plate 41 and the second sub-liner plate 42 to rotate, forms dump angle.One end of first sub-liner plate 41 and the second sub-liner plate 42 has arcuate structure, one end that two sub-liner plates have an arcuate structure when level attitude connects to form cavernous structure, cavernous structure is corresponding with the inlet mouth of venting hole 21, when the first sub-liner plate 41 and the second sub-liner plate 42 rotate, expand the area of described cavernous structure, utilize dump angle to clear up wafer debris.Be connected with vapor pipe 22 below venting hole 21.
The second chamber 12 is provided with, for carrying the wafer debris that removal of cell debris device is cleared up below annular liner plate.
embodiment 2
Referring to Fig. 3, the tube wall that the difference of the present embodiment and embodiment 1 is vapor pipe 22 is distributed with a plurality of hole 221, the single vapor pipe of the present embodiment preferably arranges 10 holes 221, vapor pipe 22 is arranged in the second chamber 12, be beneficial to waste gas in the second chamber 12 discharge more fast, improve wafer growth quality.
Referring to Fig. 4, the hole 221 on vapor pipe 22 tube wall, is preferably arranged on the tube wall away from fragment landing position, avoids fragment to fall in vapor pipe 22, causes vapor pipe 22 to block.
embodiment 3
Referring to Fig. 5 and Fig. 6, the difference of the present embodiment and embodiment 2 is that the second cavity bottom 122 has wavy fluctuating, the second cavity bottom 122 immediately below revolving part 431 is provided with chip removal mouth 121, chip-removal hole 121 number is identical with revolving part 431 number, chip removal mouth 121 is positioned at the trough place of wavy fluctuating, and vapor pipe 22 is positioned at the crest place of wavy fluctuating, the wafer debris that wavy fluctuating is conducive in the second cavity bottom 122 slides to chip removal mouth 121 under gravity guides, and reduces the number of times manually opening the second chamber 12.
embodiment 4
Referring to Fig. 7 and Fig. 8, the difference of the present embodiment and embodiment 3 is to substitute revolving part 431 by extensible member 432, extensible member 432 controls the first sub-liner plate 41 and the second sub-liner plate 42 telescopic moving, during group liner plate indentation extensible member 432, wafer debris drops to the second cavity bottom 122 from sub-liner plate.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a MOCVD system, comprise the first chamber and shell, first chamber comprises annular liner plate and venting hole, venting hole is positioned at annular liner plate, system is used for growing epitaxial wafer, and it is characterized in that, described annular liner plate is made up of plural block liner plate and moving member, described sub-liner plate moves respectively by moving member, and described sub-liner plate is by the mobile removing function realizing wafer debris.
2. a kind of MOCVD system according to claim 1, is characterized in that, described sub-liner plate one end has arcuate structure, and one end that adjacent two sub-liner plates have arcuate structure connects to form cavernous structure, and described cavernous structure is corresponding with the inlet mouth of described venting hole.
3. a kind of MOCVD system according to claim 1, it is characterized in that, described venting hole is connected with vapor pipe, and described vapor pipe tube wall is distributed with a plurality of hole.
4. a kind of MOCVD system according to claim 1, is characterized in that, is provided with the second chamber below described annular liner plate, for carrying the wafer debris cleared up from sub-liner plate.
5. a kind of MOCVD system according to claim 4, is characterized in that, described second chamber has chip-removal hole.
6. a kind of MOCVD system according to claim 5, is characterized in that, described second cavity bottom has wavy fluctuating, and described chip-removal hole is positioned at wavy trough, and the fragment being convenient to wafer is discharged.
7. a kind of MOCVD system according to claim 5, is characterized in that, described chip-removal hole number is identical with moving member number.
8. a kind of MOCVD system according to claim 5, it is characterized in that, described chip-removal hole is positioned at immediately below corresponding moving member.
9. a kind of MOCVD system according to claim 1, it is characterized in that, described moving member is fixed on shell, by circuit by external control.
10. a kind of MOCVD system according to claim 1, it is characterized in that, described moving member is preferably revolving part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610000710.3A CN105420687B (en) | 2016-01-04 | 2016-01-04 | A kind of MOCVD systems |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610000710.3A CN105420687B (en) | 2016-01-04 | 2016-01-04 | A kind of MOCVD systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105420687A true CN105420687A (en) | 2016-03-23 |
| CN105420687B CN105420687B (en) | 2018-03-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610000710.3A Active CN105420687B (en) | 2016-01-04 | 2016-01-04 | A kind of MOCVD systems |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105420687B (en) |
Citations (8)
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|---|---|---|---|---|
| US5624498A (en) * | 1993-12-22 | 1997-04-29 | Samsung Electronics Co., Ltd. | Showerhead for a gas supplying apparatus |
| KR19990085443A (en) * | 1998-05-18 | 1999-12-06 | 서성기 | Semiconductor Thin Film Deposition Equipment |
| US6194030B1 (en) * | 1999-03-18 | 2001-02-27 | International Business Machines Corporation | Chemical vapor deposition velocity control apparatus |
| SG86462A1 (en) * | 2000-03-16 | 2002-02-19 | Applied Materials Inc | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| US20030092266A1 (en) * | 1993-07-30 | 2003-05-15 | Anderson Roger N. | Gas inlets for wafer processing chamber |
| CN103160806A (en) * | 2011-12-14 | 2013-06-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet system, cavity apparatus and substrate processing device |
| CN204111865U (en) * | 2014-10-16 | 2015-01-21 | 中芯国际集成电路制造(北京)有限公司 | A kind of chemical vapor deposition unit |
| CN104561929A (en) * | 2015-01-08 | 2015-04-29 | 厦门市三安光电科技有限公司 | MOCVD (Metal Organic Chemical Vapor Deposition) reaction system |
-
2016
- 2016-01-04 CN CN201610000710.3A patent/CN105420687B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030092266A1 (en) * | 1993-07-30 | 2003-05-15 | Anderson Roger N. | Gas inlets for wafer processing chamber |
| US5624498A (en) * | 1993-12-22 | 1997-04-29 | Samsung Electronics Co., Ltd. | Showerhead for a gas supplying apparatus |
| KR19990085443A (en) * | 1998-05-18 | 1999-12-06 | 서성기 | Semiconductor Thin Film Deposition Equipment |
| US6183563B1 (en) * | 1998-05-18 | 2001-02-06 | Ips Ltd. | Apparatus for depositing thin films on semiconductor wafers |
| US6194030B1 (en) * | 1999-03-18 | 2001-02-27 | International Business Machines Corporation | Chemical vapor deposition velocity control apparatus |
| SG86462A1 (en) * | 2000-03-16 | 2002-02-19 | Applied Materials Inc | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| JP2012102409A (en) * | 2000-03-16 | 2012-05-31 | Applied Materials Inc | Upper and lower connected dual gas face plate for shower head of semiconductor wafer treatment system |
| CN103160806A (en) * | 2011-12-14 | 2013-06-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet system, cavity apparatus and substrate processing device |
| CN204111865U (en) * | 2014-10-16 | 2015-01-21 | 中芯国际集成电路制造(北京)有限公司 | A kind of chemical vapor deposition unit |
| CN104561929A (en) * | 2015-01-08 | 2015-04-29 | 厦门市三安光电科技有限公司 | MOCVD (Metal Organic Chemical Vapor Deposition) reaction system |
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| Publication number | Publication date |
|---|---|
| CN105420687B (en) | 2018-03-23 |
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Effective date of registration: 20231029 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |