CN104559891B - A kind of quick interconnected method of non-conductive adhesive and Jin Jin - Google Patents
A kind of quick interconnected method of non-conductive adhesive and Jin Jin Download PDFInfo
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- CN104559891B CN104559891B CN201410300978.XA CN201410300978A CN104559891B CN 104559891 B CN104559891 B CN 104559891B CN 201410300978 A CN201410300978 A CN 201410300978A CN 104559891 B CN104559891 B CN 104559891B
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000853 adhesive Substances 0.000 title claims abstract description 25
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 40
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 11
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 11
- 239000002105 nanoparticle Substances 0.000 claims abstract description 10
- 229940106691 bisphenol a Drugs 0.000 claims abstract description 8
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000003822 epoxy resin Substances 0.000 claims abstract description 7
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims description 28
- 229910052737 gold Inorganic materials 0.000 claims description 25
- 238000000527 sonication Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000013339 cereals Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Landscapes
- Wire Bonding (AREA)
- Conductive Materials (AREA)
Abstract
The present invention proposes a kind of non-conductive adhesive, including following component by weight：80 120 parts of epoxy resin based on bisphenol-A, 80 100 parts of methylhexahydrophthalic anhydride, 0.1 1 parts of dimethyl benzylamine and Al2O315 parts of nano particle.A kind of quick interconnected method of gold gold of proposition, including the combination by the non-conductive adhesive for chip bump and substrate pads to be connected.Propose to realize that gold gold is interconnected by hot ultrasonic technique.The non-conductive adhesive is conducive to the combination of chip bump and substrate pads.The efficiency of golden interconnection can be realized using hot ultrasonic technique and improves the reliability of connection.
Description
Technical field
The invention belongs to semiconductor integrated circuit technical field, it is related to a kind of non-conductive adhesive and the quick interconnected method of Jin-gold.
Background technology
In liquid crystal display systems, anisotropic conductive film technology (ACF) is in glass plate or chip on foil encapsulation
With quite varied, anisotropic conductive film material is that the plastic beads that trickle metallic or appearance are coated with into metal disperses
In resin material, after anisotropic conductive film is fitted between IC projection and base plate line, using appropriate pressure,
Temperature and time makes that resin starts flowing and conducting particles then contacts and reached the effect of electrically conducting with projection and base plate line,
At the same time, and due to selecting appropriate conducting particles particle diameter and addition, it is made to be connect each other between projection and projection
Touch to reach the characteristic of anisotropy conducting.
Increase with the salient point number of driving chip, and chip bump pitch reduces, this proposes sternness to ACF technologies and chosen
Fight, 15 μm of chip is smaller than for salient point, ACF techniques can produce more serious short circuit phenomenon.Jin-Jin Gongjin (alloy)
Technology can be for solving the problems, such as the ACF bridgings of narrow pitch chip belt, and has good compatible with ACF technologies in equipment
Property.During chip package, thermal conductivity, curing rate, thermomechanical matching of non-conductive adhesive etc. can all influence Electronic Packaging
Reliability, improve its thermal conductivity, accelerate curing rate, reduction thermal coefficient of expansion and dielectric constant, strict control heat ultrasound ginseng
Number turns into the key technology target in encapsulation process.Existing non-conductive adhesive, curing agent is usually imdazole derivatives curing agent, its
Curing rate is slow and heat resistance is poor.
The content of the invention
The technical problems to be solved by the invention are：Make up above-mentioned the deficiencies in the prior art, propose a kind of new non-conductive
Glue and the quick interconnected method of Jin-gold using the non-conductive adhesive.
A kind of non-conductive adhesive, including following component by weight：
80-120 parts of epoxy resin based on bisphenol-A, 80-100 parts of methylhexahydrophthalic anhydride, dimethyl benzylamine
0.1-1 parts and Al2O31-5 parts of nano particle.
Preferably, including by weight following component：
100 parts of epoxy resin based on bisphenol-A, 90 parts of methylhexahydrophthalic anhydride, 0.5 part of dimethyl benzylamine and
Al2O33 parts of nano particle.
Preferably, Al2O3Nano particle average diameter is about 100nm.
A kind of quick interconnected method of Jin-gold, including the non-conductive adhesive is used in chip bump and substrate to be connected
The combination of pad.The non-conductive adhesive is used for the combination of chip bump and substrate pads, between the two with reference to closely, not had
Filler or hole are produced.
Preferably, realize that Jin-gold is interconnected using hot ultrasonic technique, wherein, heating substrate and driving chip salient point and substrate
Pad is bonded, when bonding force reaches predetermined pressure, with applying ultrasonic energy to chip on substrate-parallel direction, makes chip
Salient point rubs with substrate faying face, removes the oxide and pollution layer on chip bump surface, while temperature rises, chip is convex
Point is deformed, and the atom of chip bump and substrate pads, which is interpenetrated, to be reached and be coupled to each other.
Preferably, sonication times are 0.1-0.5s, more preferably 0.2s.
Preferably, bonding force is 0.1-0.5kg, more preferably 0.4kg.
Preferably, ultrasonic power is 10-30mW, more preferably 22mW.
Preferably, substrate temperature is 100-200 DEG C, more preferably 160 DEG C.
It is highly preferred that sonication times are respectively 0.2s, bonding force is 0.4kg, and ultrasonic power is 22mW, substrate temperature
For 160 DEG C.
Gold-gold bonding interconnected method of the present invention, the non-conductive adhesive provided using the present invention, is conducive to chip bump and base
The combination of plate pad, further, is quickly interconnected using hot ultrasonic technique Ke Shi Xian Jin-gold, and bonding time is in 1s, effectively contracting
Short bonding time, reduces the Problem of Failure caused by bonding process, makes that product passes through 125 DEG C, 1000 hours stability surveys
Shear strength can reach more than 250g after examination, and the reliability of product is improved.
Brief description of the drawings
Fig. 1 a to Fig. 1 e are the Heat Ultrasonic Bonding process schematics of the embodiment of the present invention；
The sectional schematic diagram of Jin-gold junction when Fig. 2 a are the non-conductive adhesives using the embodiment of the present invention；
Fig. 2 b are the sectional schematic diagrams using Jin-gold junction during traditional non-conductive adhesive.
Embodiment
A kind of non-conductive adhesive for gold-gold bonding interconnection, including following component by weight：Ring based on bisphenol-A
80-120 parts of oxygen tree fat, 80-100 parts of methylhexahydrophthalic anhydride, 0.1-1 parts of dimethyl benzylamine and Al2O3Nano particle 1-
5 parts.In certain embodiments, the epoxy resin based on bisphenol-A can be 80 parts, 85 parts, 90 parts, 95 parts, 100 parts, 110 parts,
120 parts, methylhexahydrophthalic anhydride can be 80 parts, 85 parts, 90 parts, 92 parts, 95 parts, 100 parts, and dimethyl benzylamine can be with
It is 0.1 part, 0.4 part, 0.5 part, 0.6 part, 0.8 part, 1 part, Al2O3Nano particle can be 1 part, 2 parts, 2.5 parts, 3 parts, 3.5
Part, 4 parts, 5 parts.It is particularly preferred that non-conductive adhesive includes 100 parts of the epoxy resin based on bisphenol-A, methylhexahydrophthaacid acid
90 parts of acid anhydride, 0.5 part of dimethyl benzylamine and Al2O33 parts of nano particle.Preferably, Al2O3Nano particle average diameter is about
100nm。
In certain embodiments, above-mentioned any non-conductive adhesive is used for chip and substrate by the quick interconnected method of Jin-gold
Combination.
Referring to Fig. 1 a to Fig. 1 e, in a kind of specific embodiment, the method that Jin-gold is quickly interconnected is realized with hot ultrasonic technique
Comprise the following steps：
(1) pickup of chip：Start before bonding work, chip 4 is placed on assigned work platform, chip to be obtained with substrate 5
Behind position, according to substrate putting position, chip position is adjusted, alignment is realized, vacuum suction system, suction nozzle 6 is driven
Decline is put, chip is adsorbed using pull of vacuum 7, chip pickup is completed.Start substrate heating system simultaneously, heat the substrate to
150 DEG C or so.
(2) alignment of chip and substrate：Complete after chip absorption, driving translation platform movement one fix potential difference complete chip with
The physical alignment of substrate, starts vision system and adsorbed chip is looked up from beneath chips, obtain the physical location of chip, according to
The actual shifts and corner of suction chip, adjust substrate position again, realize the alignment of chip bump 1 and substrate pads 2.
(3) bonding force is applied：After chip and base plate alignment, chip keeps pull of vacuum directly over substrate, and suction nozzle is slow
Decline, until when chip bump 1 and substrate pads 2 are a slight distance, driving bonding pressure control system, chip slowly being applied
Plus key resultant pressure 8, keeps chip surface and substrate-parallel, and bonding force is vertical with orientation substrate.
(4) ultrasonic wave is applied：When bonding force reaches predetermined pressure, salient point 1 contacted with substrate and to a certain extent by
Flatten and deform, start supersonic generator, transducer is by suction nozzle with applying ultrasonic wave to chip on substrate-parallel direction
Energy 9, makes salient point be rubbed with substrate faying face, removes the oxide and pollution layer of bump surface.Simultaneously on high temperature
Rise, salient point deforms, and the atom of salient point and substrate pads interpenetrates the effect for reaching and being coupled to each other.
(5) bonding head resets：It is bonded after the completion of work, discharges suction nozzle pull of vacuum, chip is separated with suction nozzle, lifting is inhaled
Mouth, completes a bonding cycle.
The size of used chip is, for example, 1.4 (L) × 1.1 (W) × 0.125 (H) mm, and au bump number is 8, and salient point is big
Small is D=0.105mm；H1=40 μm；H2=25.4 μm.
Embodiment 1
Bonding force is 0.4kg；Ultrasonic power is 22mW；Substrate temperature is 160 DEG C；Sonication times are respectively 0.1s,
0.2s, 0.3s, 0.4s, 0.5s.Shear strength and balance height are as shown in table 1：
Table 1
| Sonication times (s) | Shear strength (g) | Balance height (μm) |
| 0.1 | 125 | 26.43 |
| 0.2 | 275 | 23.42 |
| 0.3 | 267 | 2.344 |
| 0.4 | 272 | 23.35 |
| 0.5 | 270 | 23.28 |
The Au-Au bondings shear strength of too short sonication times (0.1s) formation is very low, and balance height is also higher, and this is
Because sonication times are too short, bonding material does not reach softening also.
Embodiment 2
Sonication times are 0.2s, and power is 22mW, and substrate temperature is 160 DEG C, and bonding force is respectively 0.1kg, 0.2kg,
0.3kg, 0.4kg, 0.5kg.Shear strength and balance height are as shown in table 2
Table 2
| Bonding force (kg) | Shear strength (g) | Balance height (μm) |
| 0.1 | 75 | 32.84 |
| 0.2 | 200 | 27.46 |
| 0.3 | 250 | 22.75 |
| 0.4 | 340 | 19.45 |
| 0.5 | 325 | 17.96 |
The Au-Au bondings shear strength of excessive bonding force (0.5kg) formation decreases, and this is probably due to excessive
Bonding force causes the damage of device.
Embodiment 3
Sonication times are 0.2s, and bonding force 0.4kg, substrate temperature is 160 DEG C, and ultrasonic power is respectively 10mW,
14mW, 18mW, 22mW, 26mW.Shear strength and balance height are as shown in table 3
Table 3
| Ultrasonic power (mW) | Shear strength (g) | Balance height (μm) |
| 10 | 80 | 30.53 |
| 14 | 175 | 28.14 |
| 18 | 240 | 25.39 |
| 22 | 280 | 24.48 |
| 26 | 220 | 23.25 |
The Au-Au bondings shear strength of too small ultrasonic power (10mW) formation is very low, and balance height is also higher, and this is
Because ultrasonic power is too small, bonding material does not reach softening also.Ultrasonic power is too high (26mW), shear strength reduction, this
When being due to ultrasonic power increase, bonding material tip vibration amplitude also becomes big, material is ftractureed.
Embodiment 4
Sonication times are 0.2s, and power is 22mW, and bonding force is 0.4kg, and substrate temperature is respectively 120 DEG C, 140 DEG C,
160 DEG C, 180 DEG C, 200 DEG C.Shear strength and balance height are as shown in table 4
Table 4
| Substrate temperature (DEG C) | Shear strength (g) | Balance height (μm) |
| 120 | 120 | 25.99 |
| 140 | 260 | 23.75 |
| 160 | 275 | 22.10 |
| 180 | 270 | 21.84 |
| 200 | 210 | 21.18 |
Substrate temperature is higher, and au bump plastic deformation ability is better, but temperature is too high (200 DEG C), and shear strength can also drop
It is low.
After the completion of Jin-gold interconnection, stability test is carried out according to the method in GJB548B-2005Z, test content includes
Hot and humid (85 DEG C and 85% humidity) is tested 1000 hours, and (- 40~125 DEG C) of temperature cycles are tested 1000 hours, low temperature (-
40 DEG C) to test 1000 hours, (125 DEG C) of thermal shock is tested 1000 hours.Found after the completion of test, Jin-gold interconnection is remained in that
Preferable stability.
Comparative example
Sonication times are 0.2s, and power is 22mW, and bonding force is 0.4kg, and substrate temperature is 180 DEG C, simply used non-
Conducting resinl 3 is different, and it in the non-conductive adhesive of the present invention, Fig. 2 b is traditional non-conductive adhesive to be in Fig. 2 a.
, it is apparent that with the present invention non-conductive adhesive when, between au bump and cushion block combine closely, do not fill out
Fill thing or hole is produced；During using old non-conductive adhesive, there is filler between au bump and cushion block, with reference to be not it is fine, may
Package failure can be caused.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to assert
The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
Some replacements or substantially modification are made on the premise of not departing from present inventive concept, and performance or purposes are identical, should all be considered as
Belong to protection scope of the present invention.
Claims (12)
1. the quick interconnected method of a kind of Jin-gold, it is characterised in that including non-conductive adhesive is used for into chip bump and base to be connected
The combination of plate pad, the non-conductive adhesive includes following component by weight：80-120 parts of epoxy resin based on bisphenol-A,
80-100 parts of methylhexahydrophthalic anhydride, 0.1-1 parts of dimethyl benzylamine and Al2O31-5 parts of nano particle；Wherein pass through heat
Ultrasonic technique realizes Jin-gold interconnection of chip bump and substrate pads, wherein, heating substrate and driving chip salient point and substrate weldering
Disk is bonded, when bonding force reaches predetermined pressure, with applying ultrasonic energy to chip on substrate-parallel direction, makes chip convex
Point rubs with substrate faying face, removes the oxide and pollution layer on chip bump surface, while temperature rises, chip bump
Deform, the atom of chip bump and substrate pads, which is interpenetrated, to be reached and be coupled to each other.
2. the quick interconnected method of Jin-gold according to claim 1, it is characterised in that sonication times are 0.1-0.5s.
3. the quick interconnected method of Jin-gold according to claim 2, it is characterised in that sonication times are 0.2s.
4. the quick interconnected method of Jin-gold according to claim 1, it is characterised in that bonding force is 0.1-0.5kg.
5. the quick interconnected method of Jin-gold according to claim 4, it is characterised in that bonding force is 0.4kg.
6. the quick interconnected method of Jin-gold according to claim 1, it is characterised in that ultrasonic power is 10-30mW.
7. the quick interconnected method of Jin-gold according to claim 6, it is characterised in that ultrasonic power is 22mW.
8. the quick interconnected method of Jin-gold according to claim 1, it is characterised in that substrate temperature is 100-200 DEG C.
9. the quick interconnected method of Jin-gold according to claim 8, it is characterised in that substrate temperature is 160 DEG C.
10. the quick interconnected method of Jin-gold according to claim 1, it is characterised in that sonication times are 0.2s, bonding
Power is 0.4kg, and ultrasonic power is 22mW, and substrate temperature is 160 DEG C.
11. the quick interconnected method of Jin-gold according to claim 1, it is characterised in that the non-conductive adhesive is included by weight
The following component of meter：
100 parts of epoxy resin based on bisphenol-A, 90 parts of methylhexahydrophthalic anhydride, 0.5 part of dimethyl benzylamine and Al2O3Receive
3 parts of rice grain.
12. the quick interconnected method of Jin-gold according to claim 1 or 11, it is characterised in that Al2O3Nano particle is averagely straight
Footpath is 100nm.
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| CN115083961A (en) * | 2022-06-13 | 2022-09-20 | 石家庄麦特达电子科技有限公司 | Ultrasonic micro-vibration vacuum packaging equipment and packaging method |
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| CN102286260A (en) * | 2011-06-28 | 2011-12-21 | 上海景涵实业有限公司 | Non-yellowing high-transmittance insulated epoxy adhesive for light emitting diode (LED) and preparation method and use thereof |
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| KR101500791B1 (en) * | 2007-12-14 | 2015-03-09 | 데쿠세리아루즈 가부시키가이샤 | Photosemiconductor package sealing resin material |
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| CN102286260A (en) * | 2011-06-28 | 2011-12-21 | 上海景涵实业有限公司 | Non-yellowing high-transmittance insulated epoxy adhesive for light emitting diode (LED) and preparation method and use thereof |
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