CN104539247A - Wideband amplifier circuit of Darlington structure - Google Patents
Wideband amplifier circuit of Darlington structure Download PDFInfo
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- CN104539247A CN104539247A CN201410796213.XA CN201410796213A CN104539247A CN 104539247 A CN104539247 A CN 104539247A CN 201410796213 A CN201410796213 A CN 201410796213A CN 104539247 A CN104539247 A CN 104539247A
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- amplifier circuit
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Abstract
The invention discloses a wideband amplifier circuit of a Darlington structure. The wideband amplifier circuit comprises a first-stage amplification circuit, a second-stage amplification circuit and a phase regulating circuit. The first-stage amplification circuit comprises a first triode, and the base of the first triode is the signal input end of the wideband amplifier circuit. The second-stage amplification circuit comprises a second triode and a third triode. The emitter of the second triode is connected with the collector of the third triode, the base of the second triode is connected with direct-current bias voltages, and the emitter of the third triode is grounded. The emitter of the first triode is connected with the base of the third triode, and the collector of the first triode is connected with the collector of the second triode and serves as the signal output end of the wideband amplifier circuit. The phase regulating circuit is used for adjusting the current phase of the collector of the first-stage amplification circuit. One end of the phase regulating circuit is grounded, and the other end of the phase regulating circuit is connected with the connecting end of the emitter of the first triode and the base of the third triode.
Description
Technical field
The present invention relates to amplifier circuit technical field, particularly relate to a kind of wide-band amplifier circuit of darlington structure.
Background technology
The design of wide-band amplifier has become a hot issue in monolithic integrated microwave circuit (MMIC) field in modern electronic warfare.Darlington is born structure and is widely used in the design of wide-band amplifier circuit.Fig. 1 is the structural representation of the wide-band amplifier circuit of traditional darlington structure, wherein a is the input of whole circuit, b is the output of whole circuit, because first order amplifying circuit (comprising Q5) and second level amplifying circuit are present in (comprising Q6) phase difference of 180 degree, the electric current of the output b of whole circuit is made to be the collector electrode of triode Q5 and the difference of triode Q6 collector current, gain performance is caused to decline, so the demand that wide-band amplifier band is wide, gain is high can not have been met, and mostly use GaAsPHEMT technique, expensive.If reduce the phase difference of this two-stage when high frequency, gain just can be made to be compensated when high frequency thus to promote bandwidth.
Summary of the invention
For the technical problem that above-mentioned prior art exists, the object of the present invention is to provide a kind of wide-band amplifier circuit of darlington structure, this wide-band amplifier circuit has the advantages that band is wide, gain is high.
The invention discloses a kind of wide-band amplifier circuit of darlington structure, this wide-band amplifier circuit comprises: first order amplifying circuit, second level amplifying circuit and phase regulating circuit;
Described first order amplifying circuit comprises: the first triode, and the base stage of described first triode is the signal input part of this wide-band amplifier circuit;
Described second level amplifying circuit comprises: the second triode and the 3rd triode, the emitter of described second triode is connected with the collector electrode of described 3rd triode, the base stage of described second triode connects DC offset voltage, the grounded emitter of described 3rd triode;
The emitter of described first triode is connected with the base stage of described 3rd triode, and the collector electrode of described first triode is connected with the collector electrode of described second triode and becomes the signal output part of this wide-band amplifier circuit;
Described phase regulating circuit, for regulating the current phase of first order amplifying circuit collector electrode;
One end ground connection of described phase regulating circuit, the other end connects the link of the emitter of described first triode and the base stage of described 3rd triode.
Optionally, described phase regulating circuit comprises: the first inductance, the first resistance and field effect transistor;
One end of described first inductance, as the other end of described phase regulating circuit, is connected with the emitter of described first triode and the base stage of described 3rd triode;
The other end of described first inductance is connected with one end of described first resistance, and its link is as one end of described phase regulating circuit;
The other end of described first resistance is connected with the grid of described field effect transistor;
The drain electrode of described field effect transistor and source electrode ground connection respectively.
Optionally, this wide-band amplifier circuit also comprises: negative-feedback circuit, be connected across between described signal input part and signal output part, the voltage for the base stage making the first triode equals the difference of the voltage of described signal output part and the voltage of described signal input part.
Optionally, described negative-feedback circuit comprises: the second resistance, the 3rd resistance, electric capacity and operational amplifier;
The in-phase input end of described operational amplifier connects described signal input part, the output of described operational amplifier connects described signal output part, the inverting input of described operational amplifier is connected with one end of described second resistance, and the other end of described second resistance is connected with the output of described operational amplifier and described signal output part;
Described electric capacity and described 3rd resistor coupled in parallel, a link ground connection wherein in parallel, another link in parallel is connected with the inverting input of described operational amplifier, one end of described second resistance.
Optionally, this wide-band amplifier circuit also comprises: the 4th resistance, for regulating the bias current of the emitter of the first triode;
One end of described phase regulating circuit leads to described 4th grounding through resistance.
Optionally, this wide-band amplifier circuit also comprises: the second inductance, for regulating the bias current of the emitter of described 3rd triode;
The emitter of described 3rd triode is by described second inductance ground connection.
Optionally, this wide-band amplifier circuit adopts InGaP/GaAs HBT technique.
Compared with prior art, beneficial effect of the present invention is:
The wide-band amplifier circuit of a kind of darlington structure disclosed by the invention, phase regulating circuit is added at the emitter of first order amplifying circuit, regulate the phase place of first order amplifying circuit collector electrode, thus reduce the compensation reaching gain with the phase difference of second level amplifying circuit; In the amplifying circuit of the second level, add the second triode, and adopt cascode structure to reduce the impact of the Miller effect, thus the dominant pole of this wide-band amplifier circuit is moved to right, expand its bandwidth.Compared with traditional darlington structure, the bandwidth expansion of this wide-band amplifier circuit is 400MHz ~ 7GHz, and gain is greater than 12dB.This wide-band amplifier circuit has that cost is low, the feature of technical maturity, has carried out phasing simultaneously, solve the defect of traditional darlington structure in price, bandwidth, gain to two-stage amplifying circuit.
Accompanying drawing explanation
Fig. 1 is the structural representation of the wide-band amplifier circuit of traditional darlington structure;
Fig. 2 is the structural representation of the embodiment of the present invention one;
Fig. 3 is the structural representation of the embodiment of the present invention two.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Embodiment one
Fig. 2 is the structural representation of the embodiment of the present invention one; As shown in Figure 2, the invention discloses a kind of wide-band amplifier circuit of darlington structure, this wide-band amplifier circuit comprises: first order amplifying circuit, second level amplifying circuit and phase regulating circuit.
First order amplifying circuit comprises: the first triode Q1, and the base stage of described first triode is the signal input part a of this wide-band amplifier circuit; Second level amplifying circuit comprises: the emitter of the second triode Q2 and the 3rd triode Q3, the second triode Q2 is connected with the collector electrode of the 3rd triode Q3, and the base stage of the second triode Q2 connects DC offset voltage Vb; The grounded emitter of the 3rd triode Q3.
The emitter of the first triode Q1 is connected with the base stage of the 3rd triode Q3; The collector electrode of the first triode Q1 is connected with the collector electrode of the second triode Q2 and becomes the signal output part b of this wide-band amplifier circuit.
Phase regulating circuit, for regulating the current phase of first order amplifying circuit collector electrode.One end ground connection of phase regulating circuit; The other end connects the link of the emitter of the first triode Q1 and the base stage of the 3rd triode Q3.
In the embodiment of the present invention one, first triode Q1 is as input transistors, its base stage is the signal input part of this wide-band amplifier circuit, second triode Q2 is as output transistor, its collector electrode is as the signal output part of this wide-band amplifier circuit, second triode Q2 and the 3rd triode Q3 series coupled, form cascode structure.
Further, phase regulating circuit comprises: the first inductance L 1, first resistance R1 and field effect transistor Q4.
One end of first inductance L 1, as the other end of phase regulating circuit, is connected with the emitter of the first triode Q1 and the base stage of the 3rd triode Q3; The other end of the first inductance L 1 is connected with one end of the first resistance R1, and its link is as one end of phase regulating circuit and ground connection; The other end of the first resistance R1 is connected with the grid of field effect transistor Q4; The drain electrode of field effect transistor Q4 and source electrode ground connection respectively, field effect transistor adopts condenser type connection, i.e. drain-source short circuit.
Further, this wide-band amplifier circuit also comprises: the 4th resistance R4, for regulating the bias current of the emitter of the first triode Q1; The logical 4th resistance R4 ground connection of the other end of phase regulating circuit.
Further, this wide-band amplifier circuit also comprises: the second inductance L 2, for regulating the bias current of the emitter of the 3rd triode Q3; The emitter of the 3rd triode Q3 is by the second inductance L 2 ground connection.
Further, this wide-band amplifier circuit adopts InGaP/GaAs HBT (GaAs based InGaP heterojunction bipolar transistor) technique.
Example one of the present invention adds phase regulating circuit at the emitter of first order amplifying circuit, regulated the phase place of first order amplifying circuit collector electrode by the first inductance, the first resistance and field effect transistor three components and parts, thus reduce the compensation reaching gain with the phase difference of second level amplifying circuit.Reach certain gain compensation by the value optimizing three elements when high frequency, finally expand bandwidth.In the amplifying circuit of the second level, add the second triode, and adopt cascode structure to reduce the impact of the Miller effect, thus the dominant pole of this wide-band amplifier circuit is moved to right, expand its bandwidth.Compared with traditional darlington structure, the bandwidth expansion of this wide-band amplifier circuit is 400MHz ~ 7GHz, and gain is greater than 12dB.
The wide-band amplifier circuit of darlington structure disclosed in example one of the present invention has that cost is low, the feature of technical maturity, has carried out phasing simultaneously, solve the defect of traditional darlington structure in price, bandwidth, gain to two-stage amplifying circuit.
Embodiment two
Fig. 3 is the structural representation of the embodiment of the present invention two.As shown in Figure 3, a kind of wide-band amplifier circuit of darlington structure, this wide-band amplifier circuit comprises: first order amplifying circuit, second level amplifying circuit and phase regulating circuit.
First order amplifying circuit comprises: the first triode Q1, and the base stage of described first triode is the signal input part a of this wide-band amplifier circuit; Second level amplifying circuit comprises: the emitter of the second triode Q2 and the 3rd triode Q3, the second triode Q2 is connected with the collector electrode of the 3rd triode Q3, and the base stage of the second triode Q2 connects DC offset voltage Vb; The grounded emitter of the 3rd triode Q3.
The emitter of the one or three pole Q1 pipe is connected with the base stage of the 3rd triode Q3; The collector electrode of the first triode Q1 is connected with the collector electrode of the second triode Q2 and becomes the signal output part b of this wide-band amplifier circuit.
Phase regulating circuit, for regulating the current phase of first order amplifying circuit collector electrode.
One end ground connection of phase regulating circuit; The other end connects the link of the emitter of the first triode Q1 and the base stage of the 3rd triode Q3.
Further, phase regulating circuit comprises: the first inductance L 1, first resistance R1 and field effect transistor Q4.
One end of first inductance L 1, as the other end of phase regulating circuit, is connected with the emitter of the first triode Q1 and the base stage of the 3rd triode Q3; The other end of the first inductance L 1 is connected with one end of the first resistance R1, and its link is as one end of phase regulating circuit and ground connection; The other end of the first resistance R1 is connected with the grid of field effect transistor Q4; The drain electrode of field effect transistor Q4 and source electrode ground connection respectively, field effect transistor adopts condenser type connection, i.e. drain-source short circuit.
Further, this wide-band amplifier circuit also comprises: negative-feedback circuit, is connected across between signal input part a and signal output part b, the voltage for the base stage making the first triode Q1 equal signal output part voltage and the difference of voltage of signal input part; One end of negative-feedback circuit is connected with the base stage of the first triode Q1; The other end of negative-feedback circuit, is connected with the link of the collector electrode of the second triode with the collector electrode of the first triode Q1.
Further, negative-feedback circuit comprises: the second resistance R2, the 3rd resistance R3, electric capacity C1 and operational amplifier U1.
The in-phase input end connection signal input of operational amplifier U1, the output connection signal output of operational amplifier U1, the inverting input of operational amplifier U1 is connected with one end of the second resistance R2, and the other end of the second resistance R2 is connected with the output of operational amplifier U1 and signal output part.
One end of negative-feedback circuit is the in-phase input end of operational amplifier U1, is connected with the base stage of the first triode Q1; The other end of negative-feedback circuit is the output of operational amplifier U1 and the link of the second resistance R2, and is connected with the link of the base stage of the 3rd triode Q3 with the emitter of the first triode Q1.
Electric capacity C1 is in parallel with the 3rd resistance R3, a link ground connection wherein in parallel, another link in parallel is connected with the inverting input of operational amplifier U1, one end of the second resistance R2, that is: another link in parallel, is connected with the link of the second resistance R2 with the inverting input of operational amplifier U1.
Wherein, negative-feedback circuit is coupled between signal input part and signal output part, and electric capacity C1 selects suitable capacitive reactance, can be used for eliminating the intermodulation distortion between the signal input part of wide-band amplifier circuit and signal output part, optimizes noise factor (NF).
Further, this wide-band amplifier circuit also comprises: the 4th resistance R4, for regulating the bias current of the emitter of the first triode Q1; The logical 4th resistance R4 ground connection of the other end of phase regulating circuit.
Further, this wide-band amplifier circuit also comprises: the second inductance L 2, for regulating the bias current of the emitter of the 3rd triode Q3; The emitter of the 3rd triode Q3 is by the second inductance L 2 ground connection; Second inductance L 2 selects suitable induction reactance, can also be used for improving the linear of wide-band amplifier circuit.
Further, this wide-band amplifier circuit adopts InGaP/GaAs HBT technique.
First order amplifying circuit in the embodiment of the present invention two is by the first inductance, first resistance and field effect transistor regulate the current phase of first order amplifying circuit, reduce the phase difference of electric current between the collector electrode of first order amplifying circuit and the collector electrode of second level amplifying circuit, the change of the phase place of whole wide-band amplifier circuit output current can be reflected on the output voltage of second level amplifying circuit simultaneously, by adding a negative-feedback circuit between the signal output part and signal input part of wide-band amplifier circuit, the base voltage of the first triode is made to be the difference of the output voltage of the signal output part of wide-band amplifier circuit and the input voltage of signal input part, such phase difference can be reflected on the emitter current of first order amplifying circuit, phase adjusted is carried out again by phase regulating circuit, the change of the grid voltage of field effect transistor simultaneously also can cause the change of its electric capacity, capacitance so just can be automatically regulated to reduce to adapt to current and phase difference the change brought, thus reach phase-adjusted effect.By optimizing phase regulating circuit when high frequency and negative-feedback circuit reaches certain gain compensation, finally expand bandwidth.The bandwidth expansion of this wide-band amplifier circuit is 400MHz ~ 8GHz, and gain is greater than 15dB.
The foregoing is only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.All any amendments done within the spirit and principles in the present invention, equivalent replacement, improvement etc., be all included in protection scope of the present invention.
Claims (7)
1. a wide-band amplifier circuit for darlington structure, is characterized in that, this wide-band amplifier circuit comprises: first order amplifying circuit, second level amplifying circuit and phase regulating circuit;
Described first order amplifying circuit comprises: the first triode, and the base stage of described first triode is the signal input part of this wide-band amplifier circuit;
Described second level amplifying circuit comprises: the second triode and the 3rd triode, the emitter of described second triode is connected with the collector electrode of described 3rd triode, the base stage of described second triode connects DC offset voltage, the grounded emitter of described 3rd triode;
The emitter of described first triode is connected with the base stage of described 3rd triode, and the collector electrode of described first triode is connected with the collector electrode of described second triode and becomes the signal output part of this wide-band amplifier circuit;
Described phase regulating circuit, for regulating the current phase of first order amplifying circuit collector electrode;
One end ground connection of described phase regulating circuit, the other end connects the link of the emitter of described first triode and the base stage of described 3rd triode.
2. the wide-band amplifier circuit of darlington structure according to claim 1, is characterized in that, described phase regulating circuit comprises: the first inductance, the first resistance and field effect transistor;
One end of described first inductance, as the other end of described phase regulating circuit, is connected with the emitter of described first triode and the base stage of described 3rd triode;
The other end of described first inductance is connected with one end of described first resistance, and its link is as one end of described phase regulating circuit;
The other end of described first resistance is connected with the grid of described field effect transistor;
The drain electrode of described field effect transistor and source electrode ground connection respectively.
3. the wide-band amplifier circuit of darlington structure according to claim 2, it is characterized in that, this wide-band amplifier circuit also comprises: negative-feedback circuit, be connected across between described signal input part and signal output part, the voltage for the base stage making the first triode equals the difference of the voltage of described signal output part and the voltage of described signal input part.
4. the wide-band amplifier circuit of darlington structure according to claim 3, is characterized in that, described negative-feedback circuit comprises: the second resistance, the 3rd resistance, electric capacity and operational amplifier;
The in-phase input end of described operational amplifier connects described signal input part, the output of described operational amplifier connects described signal output part, the inverting input of described operational amplifier is connected with one end of described second resistance, and the other end of described second resistance is connected with the output of described operational amplifier and described signal output part;
Described electric capacity and described 3rd resistor coupled in parallel, a link ground connection wherein in parallel, another link in parallel is connected with the inverting input of described operational amplifier, one end of described second resistance.
5., according to the wide-band amplifier circuit of described darlington structure arbitrary in claim 1-4, it is characterized in that, this wide-band amplifier circuit also comprises: the 4th resistance, for regulating the bias current of the emitter of the first triode;
One end of described phase regulating circuit leads to described 4th grounding through resistance.
6. the wide-band amplifier circuit of darlington structure according to claim 5, is characterized in that, this wide-band amplifier circuit also comprises: the second inductance, for regulating the bias current of the emitter of described 3rd triode;
The emitter of described 3rd triode is by described second inductance ground connection.
7. according to the wide-band amplifier circuit of described darlington structure arbitrary in claim 1-4, it is characterized in that, this wide-band amplifier circuit adopts InGaP/GaAs HBT technique.
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| CN201410796213.XA CN104539247B (en) | 2014-12-18 | 2014-12-18 | A kind of wide-band amplifier circuit of darlington structure |
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| CN201410796213.XA CN104539247B (en) | 2014-12-18 | 2014-12-18 | A kind of wide-band amplifier circuit of darlington structure |
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| CN104539247B CN104539247B (en) | 2017-09-15 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105656435A (en) * | 2016-03-02 | 2016-06-08 | 苏州容芯微电子有限公司 | High-linearity wide-band amplifier |
| CN109495079A (en) * | 2018-12-29 | 2019-03-19 | 苏州英诺迅科技股份有限公司 | A kind of Darlington circuit compensating high-frequency gain |
| CN109951162A (en) * | 2019-03-08 | 2019-06-28 | 成都中宇微芯科技有限公司 | Millimeter wave power amplifying unit and amplifier |
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| DE3840854A1 (en) * | 1988-12-03 | 1990-06-07 | Licentia Gmbh | Wide-band amplifier |
| CN102111111A (en) * | 2009-12-23 | 2011-06-29 | 中国科学院微电子研究所 | Single-chip low-noise amplifier using resistor to perform coupling and matching |
| CN102324897A (en) * | 2011-07-18 | 2012-01-18 | 南京国博电子有限公司 | Improved broadband self-bias Darlington linear amplifier circuit |
| CN102368680A (en) * | 2011-09-30 | 2012-03-07 | 烽火通信科技股份有限公司 | Current feedback operational amplifier circuit |
| CN204361999U (en) * | 2014-12-18 | 2015-05-27 | 青岛歌尔声学科技有限公司 | A kind of wide-band amplifier circuit of darlington structure |
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2014
- 2014-12-18 CN CN201410796213.XA patent/CN104539247B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE3840854A1 (en) * | 1988-12-03 | 1990-06-07 | Licentia Gmbh | Wide-band amplifier |
| CN102111111A (en) * | 2009-12-23 | 2011-06-29 | 中国科学院微电子研究所 | Single-chip low-noise amplifier using resistor to perform coupling and matching |
| CN102324897A (en) * | 2011-07-18 | 2012-01-18 | 南京国博电子有限公司 | Improved broadband self-bias Darlington linear amplifier circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105656435A (en) * | 2016-03-02 | 2016-06-08 | 苏州容芯微电子有限公司 | High-linearity wide-band amplifier |
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| CN109495079A (en) * | 2018-12-29 | 2019-03-19 | 苏州英诺迅科技股份有限公司 | A kind of Darlington circuit compensating high-frequency gain |
| CN109951162A (en) * | 2019-03-08 | 2019-06-28 | 成都中宇微芯科技有限公司 | Millimeter wave power amplifying unit and amplifier |
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| CN104539247B (en) | 2017-09-15 |
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