CN104538837B - Nanometer plasma array laser device and manufacturing method thereof - Google Patents
Nanometer plasma array laser device and manufacturing method thereof Download PDFInfo
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- CN104538837B CN104538837B CN201510013055.0A CN201510013055A CN104538837B CN 104538837 B CN104538837 B CN 104538837B CN 201510013055 A CN201510013055 A CN 201510013055A CN 104538837 B CN104538837 B CN 104538837B
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Abstract
The invention provides a nanometer plasma array laser device and a manufacturing method of the laser device and belongs to the technical field of optics. According to the method, photons excited by an electrical pump semiconductor nanowire p-n junction array are utilized for interacting with surface metal-dielectric films to generate surface plasmon polaritons (SPP), and then photon beams generated in a nanowire resonant cavity are restrained and regulated. According to the method, the double advantages of semiconductor nanometer structure geometric limitation and limitation and constraint of a surface plasma mode field to beams are combined, a semiconductor nanowire is utilized for integrating a working substance and the resonant cavity and achieving mode field constraint on surface plasmas, and finally the nanometer plasma laser device is formed.
Description
Technical field
The invention belongs to optical technical field, and in particular to a kind of nano plasma array laser and its making side
Method.
Background technology
Since First laser instrument generation before 50 years, some new nanometer technologies bring up to one microlaser
New field, has started the research boom of nano laser.At present, wide variety of nano laser mainly has optical pumping nanometer
Plasma laser and electric pump conductor nano tube/linear array laser instrument.
Optical pumping nanometer plasma body laser is horizontally placed on metal-dielectric by single chalcogenide semiconductor cadmium (CdS) nano wire
Nanometer plasma body laser is constituted on composite membrane, Laser emission is realized by laser pumped by pulsed laser；Due to nano wire-composite membrane
The nanoscale gap at interface realizes that surface plasma Localized field enhancement effect carries out plasma-light mixing pumping, realizes
Nano wire end face Laser emission, excites optical mode to be subject to the restriction humidification of surface plasma to break through diffraction limit.But
It is that it has the disadvantage that：1) nano wire is single, limits the power of laser instrument；2) pump mode is laser pumped by pulsed laser, real
Border using when can greatly increase the size of laser instrument；3) operating temperature is the ultralow temperature less than 10K, is unfavorable for practical application.
Electric pump conductor nano tube/linear array laser fabrication process is：N-shaped zinc oxide (ZnO) film is prepared on substrate,
Type p ZnO nano-wire (hexagonal prismoid) array of antimony dopant (Sb) element is grown on N-shaped ZnO film, under room temperature, in substrate and
Nano wire top makes respectively electrode and carries out electric pump, and laser is from nano wire top emission；Its shortcoming is also fairly obvious：1) grow
Nano-wire array is random, is unfavorable for the synthesis of light beam and the synthesis of power；2) light beam synthesis is not carried out, does not complete laser instrument
Encapsulation, does not form device.
Nano laser research based on materials such as zinc oxide, cadmium sulfides causes scientist's extensive concern, by introducing half
Nanowires or nano-array, have made microlaser and nano laser reach the level of diffraction limit, but due to spreading out
The presence of emitter-base bandgap grading limit, limits the minimum dimension of semiconductor nano laser instrument.It is emerging in recent years in order to break through the restriction of diffraction limit
The research based on surface plasma body technique for rising makes great progress in terms of this restriction is overcome, and is increasingly becoming and grinds
Study carefully focus.
The geometry of nanometer plasma body laser set semiconductor nano laser instrument limit and plasma laser in
Surface plasma mould field limits the two-fold advantage for breaking through diffraction limit, and using semiconductor nanowires operation material and resonance are realized
Chamber it is integrated, surface plasma can break through optical diffraction limit, therefore nanometer plasma body laser has small volume, monochromatic
Property, good directionality, high working efficiency is for example micro- by military field is widely used in the advantages of energy threshold is low and the response time is short
The regulation and control of bug attitude, laser gyro, laser guidance tracking, laser fuze, laser communication and laser ranging etc., domestic life
Laser dot-matrix light source in the such as ultra-thin display in field.
The content of the invention
It is an object of the present invention to provide electric pump nano plasma swashs under a kind of regular array, high power, Low threshold, room temperature
Light device.
The surface plasma that the present invention is excited using the photon of electric pump transmitting and the effect of surface metal dielectric film
Body excimer (SPP), the photon beam to producing in semiconductor nanowires enters row constraint regulation and control, specifically adopts the following technical scheme that：
The present invention provides a kind of nano plasma array laser, and its structure is as shown in figure 1, Fig. 2 is its structure fractionation
Schematic diagram, including ITO (Indium Tin Oxide) electrode 1, the insulating medium layer 3, the Semiconductor substrate 4 that offer via-hole array
And metal electrode 5, the insulating medium layer 3 is arranged at the upper surface of Semiconductor substrate 4, and growth has half on described each through hole
Conductor material nano line 203, the bottom of semiconductor nanowires 203 is joined directly together with Semiconductor substrate 4；The semi-conducting material nanometer
The side of line 203 is coated with successively from the inside to the outside dielectric film 202 and metallic film 201, its cross section as shown in figure 3, by
This constitutes nano-wire array 2；The top of the nano-wire array 2 is joined directly together with the bottom surface of ITO electrode 1；The upper surface of ITO electrode 1
Microlens array 7 is provided with, for the laser of every nano wire top emission in nano-wire array to be assembled into collimation；Nano-wire array
2 top is completely covered by microlens array 7；Metal electrode 5 is contacted in Semiconductor substrate 4 and not with insulating medium layer 3；
When using, metal electrode 5 and ITO electrode 1 are connected to into respectively the two ends of power supply 6, when electric current reaches threshold value, you can transmitting swashs
Light.
The length of the nanowires of semiconductor material 203 is 1-20 μm.
The thickness of the dielectric film 202 is 5-30nm.
The thickness of the metallic film 201 is 10-70nm.
Further, the through hole that the insulating medium layer 3 is opened up is circular and is in Hexagonal Close-packed array arrangement, such as Fig. 4 institutes
Show, through-hole diameter is 100-300nm.
The preparation method that the present invention also provides the nano plasma array laser, specifically includes following steps：
It is prepared by the processing of step 1. substrate：
One layer of insulating medium layer 3 is sputtered in Semiconductor substrate 4, using el technology (EBL) by dielectric
Layer 3 etches pores array structure, and etching depth is that i.e. just etching wears insulating medium layer 3 to the thickness of insulating medium layer 3；
It is prepared by the growth of step 2. nanowires of semiconductor material：
Using chemical vapour deposition technique (CVD), nanowires of semiconductor material 203 is grown on the hole of insulating medium layer 3；
Step 3. sputter coating：
Using magnetron sputtering technique, in the side of every nanowires of semiconductor material 203 one layer is sputtered successively from inside to outside
Dielectric film layer 202 and metallic film 201；The effect of metallic film 201 is that light excites generation surface plasma to realize
Feedback and regulation and control to light field, the effect of dielectric film layer 202 is to prevent metallic film 201 from contacting with Semiconductor substrate 4
Cause the electric pole short circuit between nano wire top and substrate；
Step 4. electrode process：
Using magnetron sputtering technique, on the top of the nano-wire array 2 being made up of nanowires of semiconductor material 203 one is sputtered
Layer ITO electrode 1, in report evaporation metal electrode 5 on substrate 4 is carried, such as silver-colored (Ag) or golden (Au) electrode, the metal electrode 5
Do not contact with insulating medium layer 3；
Step 5. microlens array light beam synthesizes：
The lid lastblock ito glass above ITO electrode, the conducting surface of ito glass and the ITO electrode of sputtering in step 4
Contact；On the nonconductive surface of ito glass, microlens array 7 is etched into using photoetching process, will be every using microlens array
The Laser synthesizing of beam single nano-wire transmitting is beam of laser.
The invention has the beneficial effects as follows：
The present invention combines the two-fold advantage of semiconductor nano laser instrument and plasma light pumped laser, realizes
The restriction effect of electric pump and surface plasma and field local enhancement effect combine, and on the basis of both, enter
Go light beam synthesis, finally realize the Laser emission of electric pump semiconductor nano plasma laser, and in laser power
Etc. aspect be greatly improved.
Description of the drawings
The structural representation of the nanometer plasma body laser that Fig. 1 is provided for the present invention；
The structure of the nanometer plasma body laser that Fig. 2 is provided for the present invention splits schematic diagram；
Fig. 3 is nanowire cross-section schematic diagram；
Fig. 4 is Hexagonal Close-packed array arrangement schematic diagram；
The array light source position view in Hexagonal Close-packed of the nanometer plasma body laser that Fig. 5 is provided for embodiment；
The array light light distribution of the nanometer plasma body laser that Fig. 6 is provided for embodiment；
The array light compositing gray-scale map of the nanometer plasma body laser that Fig. 7 is provided for embodiment.
Specific embodiment
With reference to embodiment, the present invention will be further described.
Embodiment
The present embodiment provides a kind of nano plasma array laser, and its structure is as shown in figure 1, Fig. 2 is its structure tears open
Divide schematic diagram, nano-wire array is made up of 19 coherent sources, as shown in figure 5, each coherent source is identical, mode of operation
For TEM00Mould, part concrete material, parameter and size are as follows：
The Semiconductor substrate 4 is gallium nitride (GaN) substrate；
The insulating medium layer 3 is SiO2Film layer, its thickness is 300nm；
The SiO2Film layer 3 offers the manhole array in Hexagonal Close-packed array arrangement, as shown in figure 4, through hole
A diameter of 200nm, the center distance of adjacent through-holes is 1 μm；Each lead to the hole site grows ZnO nano-wire 203, and its length is
3μm；
The ZnO nano-wire side is coated with successively from the inside to the outside the SiO that a layer thickness is 10nm2Film 202 and one layer
Thickness is the Ag films 201 of 30nm；
In the microlens array 7 that the upper surface of ITO electrode 1 is arranged, each lenticular diameter and its radius of curvature all same,
And respectively 100 μm and 50 μm；
The upper surface of gallium nitride substrate 4 be provided with not with SiO2The Au electrodes 5 of the contact of film layer 3, when using, by metal electrode 5
With the two ends that ITO electrode 1 is connected to respectively voltage x current source 6, loading suitable electric current can transmitting laser.
The present embodiment sets up corresponding program to simulate the effect simulation of optics coherence tomography using matlab, simulates distance and swashs
Optics coherence tomography effect at radiant 5m, array light light distribution, array light compositing gray-scale map respectively as shown in Figure 6,7, and are obtained
It is 54.9% to the combined coefficient ratio that to be z-plane account for system total power with the energy of light source position corresponding region.
The preparation method of the nano plasma array laser that the present embodiment is provided is specific as follows：
It is prepared by the processing of step 1. substrate：
One layer of SiO is sputtered on p-type gallium nitride (GaN) substrate 42Film layer 3, will using el technology (EBL)
SiO2Film layer etches pores array structure, and etching depth is SiO2Thin film layer thickness wears SiO to reach just etching2It is thin
Film layer；
It is prepared by the growth of step 2.ZnO nano wire：
Using chemical vapour deposition technique (CVD), in SiO2Growing n type ZnO nano wire 203 on the hole of film layer 3；
Typically with zinc (Zn) piece as Zn sources growing ZnO nano-wire 203 in 700 DEG C of environment, growth time 30min, growth
After the completion of Temperature fall；
Step 3. sputter coating：
Using magnetron sputtering technique, in the side of every ZnO nano-wire 203 one layer of SiO is sputtered successively from inside to outside2Film
202 and Ag film 201 of layer；The effect of Ag films is that light excites the feedback and regulation and control for producing surface plasma realization to light field,
SiO2The effect of film layer is to prevent Ag films and substrate contact from causing the electric pole short circuit between nano wire top and substrate；
Step 4. electrode process：
Using magnetron sputtering technique, one layer of ITO electrode 1 is sputtered on the top of nano-wire array 2, steamed on gallium nitride substrate 4
Metallized electrode 5, such as silver-colored (Ag) or golden (Au) electrode, the electrode 5 not with SiO2Layer 3 is contacted；
Step 5. microlens array light beam synthesizes：
Above ITO electrode, lid lastblock ito glass, the ITO electrode sputtered in the conducting surface and step 4 of ito glass
Contact, and an electrode is drawn in the middle of the ITO electrode interlayer of the contact with ito glass conducting surface and be easy to connect power supply；In ITO
On the nonconductive surface of glass, microlens array 7 is etched into using photoetching process, will be per beam single nano-wire using microlens array
The Laser synthesizing of transmitting is beam of laser.
Claims (5)
1. a kind of nano plasma array laser, including ITO electrode (1), the insulating medium layer for offering via-hole array
(3), Semiconductor substrate (4) and metal electrode (5), the insulating medium layer (3) is arranged at Semiconductor substrate (4) upper surface, its
It is characterised by, growth has nanowires of semiconductor material (203) on each through hole in the via-hole array, thus constitutes and receive
Nanowire arrays (2), nanowires of semiconductor material (203) bottom is joined directly together with Semiconductor substrate (4), metal electrode (5)
Contact in Semiconductor substrate (4) and not with insulating medium layer (3), nanowires of semiconductor material (203) side is by interior
To being coated with dielectric film layer (202) and metallic film (201) successively outward；The top of the nano-wire array (2) and ITO
The bottom surface of electrode (1) is joined directly together；ITO electrode (1) upper surface is provided with microlens array (7), for will be every in nano-wire array
The laser of root nano wire top emission assembles collimation.
2. nano plasma array laser according to claim 1, it is characterised in that the insulating medium layer (3)
For circle and in Hexagonal Close-packed array arrangement, through-hole diameter is 100-300nm to the via-hole array for opening up.
3. nano plasma array laser according to claim 2, it is characterised in that the semi-conducting material nanometer
Line (203) is ZnO nano-wire, and its length is 1-20 μm, and the dielectric film layer (202) is SiO2Film layer, its thickness
For 5-30nm, the metallic film (201) is Ag films, and its thickness is 10-70nm.
4. nano plasma array laser according to claim 1, it is characterised in that the metal electrode (5) is
Golden (Au) electrode or silver (Ag) electrode.
5. the preparation method of nano plasma array laser as claimed in claim 1, specifically includes following steps：
It is prepared by the processing of step 1. substrate：One layer of insulating medium layer (3) is sputtered in Semiconductor substrate (4), is lost using electron beam
Insulating medium layer (3) is etched pores array structure by lithography (EBL), and etching depth is the thickness of insulating medium layer (3)；
It is prepared by the growth of step 2. nanowires of semiconductor material：Using chemical vapour deposition technique (CVD), in insulating medium layer (3)
Hole on grow nanowires of semiconductor material (203)；
Step 3. sputter coating：Using magnetron sputtering technique, in the side of every nanowires of semiconductor material (203) from inside to outside
One layer of dielectric film layer (202) and layer of metal film (201) are sputtered successively；
Step 4. electrode process：Using magnetron sputtering technique, in the nano-wire array being made up of nanowires of semiconductor material (203)
(2) top sputters one layer of ITO electrode (1), the evaporation metal electrode (5) in Semiconductor substrate (4), the metal electrode (5)
Do not contact with insulating medium layer (3)；
Step 5. microlens array light beam synthesizes：Lid lastblock ito glass, the conduction of ito glass above ITO electrode (1)
Face contacts with the ITO electrode sputtered in step 4；On the nonconductive surface of ito glass, lenticule is etched into using photoetching process
Array (7).
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Families Citing this family (8)
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| CN105154974B (en) * | 2015-09-28 | 2018-01-26 | 中国科学院重庆绿色智能技术研究院 | A kind of method for retouching side growth ZnO |
| CN105322439B (en) * | 2015-11-24 | 2018-06-19 | 电子科技大学 | It is a kind of based on growing patterned light beam controllable nano laser line generator |
| CN105807466B (en) * | 2016-05-11 | 2019-06-21 | 电子科技大学 | A kind of metal nanoparticle-liquid crystal array structure box production of photoelectricity regulation |
| CN109553066B (en) * | 2018-11-20 | 2019-12-10 | 上海交通大学 | Method for modifying surface of nano material plasma |
| CN109830886B (en) * | 2019-03-19 | 2021-02-26 | 北京工业大学 | Multi-cavity coupling enhanced nano plasma laser array and preparation method thereof |
| CN113013731B (en) * | 2021-02-19 | 2023-12-12 | 苏州科技大学 | Flexible electric pumping ZnO nanowire laser array structure and preparation method thereof |
| CN114256737B (en) * | 2021-12-15 | 2023-09-26 | 电子科技大学 | Narrow-linewidth DFB (distributed feedback) nano plasma laser and preparation method thereof |
| CN114678760B (en) * | 2022-03-25 | 2023-11-07 | 苏州浪潮智能科技有限公司 | Nanowire laser |
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| US20090045720A1 (en) * | 2005-11-10 | 2009-02-19 | Eun Kyung Lee | Method for producing nanowires using porous glass template, and multi-probe, field emission tip and devices employing the nanowires |
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| EP1804350A1 (en) * | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | A semiconductor laser comprising elongate nanostructures |
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| CN102780156A (en) * | 2011-05-13 | 2012-11-14 | 中国科学院物理研究所 | Aluminum nitride solid-state laser and preparation method thereof |
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