CN104538837A - Nanometer plasma array laser device and manufacturing method thereof - Google Patents
Nanometer plasma array laser device and manufacturing method thereof Download PDFInfo
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- CN104538837A CN104538837A CN201510013055.0A CN201510013055A CN104538837A CN 104538837 A CN104538837 A CN 104538837A CN 201510013055 A CN201510013055 A CN 201510013055A CN 104538837 A CN104538837 A CN 104538837A
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Abstract
The invention provides a nanometer plasma array laser device and a manufacturing method of the laser device and belongs to the technical field of optics. According to the method, photons excited by an electrical pump semiconductor nanowire p-n junction array are utilized for interacting with surface metal-dielectric films to generate surface plasmon polaritons (SPP), and then photon beams generated in a nanowire resonant cavity are restrained and regulated. According to the method, the double advantages of semiconductor nanometer structure geometric limitation and limitation and constraint of a surface plasma mode field to beams are combined, a semiconductor nanowire is utilized for integrating a working substance and the resonant cavity and achieving mode field constraint on surface plasmas, and finally the nanometer plasma laser device is formed.
Description
Technical field
The invention belongs to optical technical field, be specifically related to a kind of nano plasma array laser and preparation method thereof.
Background technology
Since before 50 years, First laser produces, some new nanometer technologies bring up to a new field microlaser, have started the research boom of nano laser.At present, the nano laser of extensive use mainly contains optical pumping nanometer plasma body laser and electric pump conductor nano tube/linear array laser.
Optical pumping nanometer plasma body laser is horizontally placed on metal-dielectric composite membrane by single chalcogenide semiconductor cadmium (CdS) nano wire and forms nanometer plasma body laser, realizes Laser emission by laser pumped by pulsed laser; Nanoscale gap due to nano wire-composite membrane interface realizes surface plasma Localized field enhancement effect and carries out plasma-light mixing pumping, realize in nano wire end face Laser emission, the restriction humidification that exciting light pattern is subject to surface plasma breaks through diffraction limit.But it has following shortcoming: 1) nano wire is single, limits the power of laser; 2) pump mode is laser pumped by pulsed laser, greatly can increase the size of laser during practical application; 3) working temperature is the ultralow temperature being less than 10K, is unfavorable for practical application.
Electric pump conductor nano tube/linear array laser fabrication process is: N-shaped zinc oxide (ZnO) film prepared by substrate, type p ZnO nano-wire (hexagonal prismoid) array of grow doping antimony (Sb) element on N-shaped ZnO film, under room temperature, make electrode respectively at substrate and nano wire top and carry out electric pump, laser is from nano wire top emission; Its shortcoming is also fairly obvious: 1) growing nano linear array is random, is unfavorable for the synthesis of light beam and the synthesis of power; 2) do not carry out light beam synthesis, do not complete the encapsulation of laser, do not form device.
Nano laser research based on the material such as zinc oxide, cadmium sulfide causes scientist's extensive concern, by introducing semiconductor nanowires or nano-array, microlaser and nano laser has been made to reach the level of diffraction limit, but due to the existence of diffraction limit, limit the minimum dimension of semiconductor nano laser.In order to break through the restriction of diffraction limit, rising in recent years based on surface plasma body technique research overcome this restriction in make great progress, become study hotspot gradually.
The two-fold advantage of surface plasma mould field restriction breakthrough diffraction limit in the geometry restriction of nanometer plasma body laser set semiconductor nano laser and plasma laser, semiconductor nanowires is utilized to realize the integrated of operation material resonant cavity, surface plasma can break through optical diffraction limit, therefore to have volume little for nanometer plasma body laser, monochromaticjty, good directionality, operating efficiency is high, the advantages such as energy threshold low and response time is short, military field will be widely used in as the regulation and control of micro ohm resistance attitude, laser gyro, laser guidance is followed the tracks of, laser fuze, laser communication and laser ranging etc., domestic life field is as the laser dot-matrix light source etc. in ultra-thin display.
Summary of the invention
The object of the invention is to provide electric pump nanometer plasma body laser under a kind of regular array, high power, Low threshold, room temperature.
The surface plasma excimer (SPP) that the effect of the photon that the present invention utilizes electric pump to launch and surface metal dielectric film excites, carries out constraint regulation and control to the photon beam produced in semiconductor nanowires, specifically adopts following technical scheme:
The invention provides a kind of nano plasma array laser, its structure as shown in Figure 1, Fig. 2 is that its structure splits schematic diagram, comprise ITO (Indium Tin Oxide) electrode 1, the insulating medium layer 3 offering via-hole array, Semiconductor substrate 4 and metal electrode 5, described insulating medium layer 3 is arranged at Semiconductor substrate 4 upper surface, on each through hole described, all growth has nanowires of semiconductor material 203, and semiconductor nanowires 203 bottom is directly connected with Semiconductor substrate 4; Described nanowires of semiconductor material 203 side is coated with dielectric film 202 and metallic film 201 from the inside to the outside successively, and its cross section as shown in Figure 3, forms nano-wire array 2 thus; Described nano-wire array 2 top is directly connected with the bottom surface of ITO electrode 1; ITO electrode 1 upper surface is provided with microlens array 7, for the laser of root nano wire top emission every in nano-wire array is assembled collimation; The top of nano-wire array 2 is covered completely by microlens array 7; Metal electrode 5 to be located in Semiconductor substrate 4 and not to be contacted with insulating medium layer 3; During use, metal electrode 5 and ITO electrode 1 are connected to respectively the two ends of power supply 6, when electric current reaches threshold value, get final product Emission Lasers.
The length of described nanowires of semiconductor material 203 is 1-20 μm.
The thickness of described dielectric film 202 is 5-30nm.
The thickness of described metallic film 201 is 10-70nm.
Further, the through hole that described insulating medium layer 3 is offered is for circular also in Hexagonal Close-packed array arrangement, and as shown in Figure 4, through-hole diameter is 100-300nm.
The present invention also provides the manufacture method of described nano plasma array laser, specifically comprises the following steps:
The processing preparation of step 1. substrate:
Semiconductor substrate 4 sputters one deck insulating medium layer 3, use el technology (EBL) insulating medium layer 3 is etched pores array structure, etching depth be insulating medium layer 3 thickness namely just etching wear insulating medium layer 3;
The growth preparation of step 2. nanowires of semiconductor material:
Adopt chemical vapour deposition technique (CVD), growing semiconductor material nano line 203 on the hole of insulating medium layer 3;
Step 3. sputter coating:
Adopt magnetron sputtering technique, sputter one deck dielectric thin layer 202 and metallic film 201 successively from inside to outside in the side of every root nanowires of semiconductor material 203; The effect of metallic film 201 is that optical excitation produces surface plasma realization to the feedback of light field and regulation and control, and the effect of dielectric thin layer 202 prevents metallic film 201 from contacting with Semiconductor substrate 4 electric pole short circuit caused between nano wire top and substrate;
Step 4. electrode process:
Adopt magnetron sputtering technique, one deck ITO electrode 1 is sputtered on the top of the nano-wire array 2 be made up of nanowires of semiconductor material 203, evaporation metal electrode 5 on substrate 4 is carried at report, such as silver (Ag) or gold (Au) electrode, described metal electrode 5 does not contact with insulating medium layer 3;
Step 5. microlens array light beam synthesizes:
At the upper cover lastblock ito glass of ITO electrode, the conducting surface of ito glass contacts with the ITO electrode sputtered in step 4; On the nonconductive surface of ito glass, adopt photoetching process be etched into microlens array 7, use microlens array by often restraint single nano-wire launch Laser synthesizing be beam of laser.
The invention has the beneficial effects as follows:
The two-fold advantage of semiconductor nano laser and plasma light pumped laser combines by the present invention, the restriction effect and the field local enhancement effect that achieve electric pump and surface plasma combine, and on both bases, carry out light beam synthesis, finally achieve the Laser emission of electric pump semiconductor nano plasma laser, and be greatly improved in laser power etc.
Accompanying drawing explanation
Fig. 1 is the structural representation of nanometer plasma body laser provided by the invention;
Fig. 2 is that the structure of nanometer plasma body laser provided by the invention splits schematic diagram;
Fig. 3 is nanowire cross-section schematic diagram;
Fig. 4 is Hexagonal Close-packed array arrangement schematic diagram;
The array light source position view in Hexagonal Close-packed of the nanometer plasma body laser that Fig. 5 provides for embodiment;
The array light light distribution of the nanometer plasma body laser that Fig. 6 provides for embodiment;
The array light compositing gray-scale map of the nanometer plasma body laser that Fig. 7 provides for embodiment.
Embodiment
Below in conjunction with embodiment, the present invention will be further described.
Embodiment
The present embodiment provides a kind of nano plasma array laser, and as shown in Figure 1, Fig. 2 is that its structure splits schematic diagram to its structure, and nano-wire array is made up of 19 coherent sources, and as shown in Figure 5, each coherent source is identical, and mode of operation is TEM
00mould, part concrete material, parameter and size is as follows:
Described Semiconductor substrate 4 is gallium nitride (GaN) substrate;
Described insulating medium layer 3 is SiO
2thin layer, its thickness is 300nm;
Described SiO
2thin layer 3 offers the manhole array in Hexagonal Close-packed array arrangement, and as shown in Figure 4, through-hole diameter is 200nm, and the center distance of adjacent through-holes is 1 μm; Each lead to the hole site all grows ZnO nano-wire 203, and its length is 3 μm;
Described ZnO nano-wire side is coated with the SiO that a layer thickness is 10nm from the inside to the outside successively
2film 202 and a layer thickness are the Ag film 201 of 30nm;
In the microlens array 7 that ITO electrode 1 upper surface is arranged, each lenticular diameter and radius of curvature all identical, and be respectively 100 μm and 50 μm;
Gallium nitride substrate 4 upper surface be provided with not with SiO
2the Au electrode 5 that thin layer 3 contacts, during use, is connected to the two ends in electric current and voltage source 6 respectively, loads suitable electric current and get final product Emission Lasers by metal electrode 5 and ITO electrode 1.
The present embodiment utilizes matlab to set up corresponding program to simulate the effect simulation of optics coherence tomography, simulate the optics coherence tomography effect at distance LASER Light Source 5m place, the light distribution of array light, array light compositing gray-scale map are distinguished as shown in Figure 6,7, and the ratio that the energy obtaining combined coefficient and z-plane and light source position corresponding region accounts for system total power is 54.9%.
The manufacture method of the nano plasma array laser that the present embodiment provides is specific as follows:
The processing preparation of step 1. substrate:
P-type gallium nitride (GaN) substrate 4 sputters one deck SiO
2thin layer 3, uses el technology (EBL) by SiO
2thin layer etches pores array structure, and etching depth is SiO
2thin film layer thickness wears SiO to reach just etching
2thin layer;
The growth preparation of step 2.ZnO nano wire:
Adopt chemical vapour deposition technique (CVD), at SiO
2growing n type ZnO nano wire 203 on the hole of thin layer 3;
General be Zn source growing ZnO nano-wire 203, growth time 30min with zinc (Zn) sheet in 700 DEG C of environment, grown rear Temperature fall;
Step 3. sputter coating:
Adopt magnetron sputtering technique, sputter one deck SiO successively from inside to outside in the side of every root ZnO nano-wire 203
2thin layer 202 and Ag film 201; The effect of Ag film is that optical excitation produces surface plasma realization to the feedback of light field and regulation and control, SiO
2the effect of thin layer is the electric pole short circuit preventing Ag film and substrate contact from causing between nano wire top and substrate;
Step 4. electrode process:
Adopt magnetron sputtering technique, sputter one deck ITO electrode 1 on nano-wire array 2 top, evaporation metal electrode 5 on gallium nitride substrate 4, such as silver (Ag) or gold (Au) electrode, described electrode 5 not with SiO
2layer 3 contact;
Step 5. microlens array light beam synthesizes:
On ITO electrode, lid lastblock ito glass, the conducting surface of ito glass contacts with the ITO electrode sputtered in step 4, and an extraction electrode is convenient to be connected power supply in the middle of ITO electrode with the contact interlayer of ito glass conducting surface; On the nonconductive surface of ito glass, adopt photoetching process be etched into microlens array 7, use microlens array by often restraint single nano-wire launch Laser synthesizing be beam of laser.
Claims (5)
1. a nano plasma array laser, comprise ITO electrode (1), offer the insulating medium layer (3) of via-hole array, Semiconductor substrate (4) and metal electrode (5), described insulating medium layer (3) is arranged at Semiconductor substrate (4) upper surface, it is characterized in that, on each through hole described, all growth has nanowires of semiconductor material (203), form nano-wire array (2) thus, described semiconductor nanowires (203) bottom is directly connected with Semiconductor substrate (4), metal electrode (5) is located at Semiconductor substrate (4) and is gone up and do not contact with insulating medium layer (3), described nanowires of semiconductor material (203) side is coated with dielectric thin layer (202) and metallic film (201) from the inside to the outside successively, the top of described nano-wire array (2) is directly connected with the bottom surface of ITO electrode (1), ITO electrode (1) upper surface is provided with microlens array (7), for the laser of root nano wire top emission every in nano-wire array is assembled collimation.
2. nano plasma array laser according to claim 1, is characterized in that, the via-hole array that described insulating medium layer (3) is offered is for circular also in Hexagonal Close-packed array arrangement, and through-hole diameter is 100-300nm.
3. nano plasma array laser according to claim 2, is characterized in that, described nanowires of semiconductor material (203) is ZnO nano-wire, and its length is 1-20 μm, and described dielectric thin layer (202) is SiO
2thin layer, its thickness is 5-30nm, and described metallic film (201) is Ag film, and its thickness is 10-70nm.
4. nano plasma array laser according to claim 1, is characterized in that, described metal electrode (5) is gold (Au) electrode or silver (Ag) electrode.
5. the manufacture method of nano plasma array laser as claimed in claim 1, specifically comprises the following steps:
The processing preparation of step 1. substrate: in Semiconductor substrate (4) upper sputtering one deck insulating medium layer (3), use el technology (EBL) that insulating medium layer (3) is etched pores array structure, etching depth is the thickness of insulating medium layer (3);
The growth preparation of step 2. nanowires of semiconductor material: adopt chemical vapour deposition technique (CVD), growing semiconductor material nano line (203) on the hole of insulating medium layer (3);
Step 3. sputter coating: adopt magnetron sputtering technique, sputters one deck dielectric thin layer (202) and layer of metal film (201) from inside to outside successively in the side of every root nanowires of semiconductor material (203);
Step 4. electrode process: adopt magnetron sputtering technique, one deck ITO electrode (1) is sputtered on the top of the nano-wire array (2) be made up of nanowires of semiconductor material (203), at the upper evaporation metal electrode (5) of Semiconductor substrate (4), described metal electrode (5) does not contact with insulating medium layer (3);
Step 5. microlens array light beam synthesizes: at the upper cover lastblock ito glass of ITO electrode (1), the conducting surface of ito glass contacts with the ITO electrode sputtered in step 4; On the nonconductive surface of ito glass, photoetching process is adopted to be etched into microlens array (7).
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| CN105154974A (en) * | 2015-09-28 | 2015-12-16 | 中国科学院重庆绿色智能技术研究院 | Method for stroke growth of ZnO |
| CN105322439A (en) * | 2015-11-24 | 2016-02-10 | 电子科技大学 | Light-beam-controllable nanowire laser based on patterning growth |
| CN105807466A (en) * | 2016-05-11 | 2016-07-27 | 电子科技大学 | Production of photoelectric regulation metal nanoparticle and liquid crystal array structural box |
| CN109553066A (en) * | 2018-11-20 | 2019-04-02 | 上海交通大学 | A kind of method of nano material plasma surface transformation |
| CN109830886A (en) * | 2019-03-19 | 2019-05-31 | 北京工业大学 | A kind of nano plasma laser array and preparation method thereof of multi-cavity coupling enhancing |
| CN113013731A (en) * | 2021-02-19 | 2021-06-22 | 苏州科技大学 | Flexible electric pumping ZnO nanowire laser array structure and preparation method thereof |
| CN114256737A (en) * | 2021-12-15 | 2022-03-29 | 电子科技大学 | Narrow-linewidth DFB (distributed feed back) nano plasma laser and preparation method thereof |
| CN114678760A (en) * | 2022-03-25 | 2022-06-28 | 苏州浪潮智能科技有限公司 | Nanowire laser |
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| CN105807466B (en) * | 2016-05-11 | 2019-06-21 | 电子科技大学 | A kind of metal nanoparticle-liquid crystal array structure box production of photoelectricity regulation |
| CN105807466A (en) * | 2016-05-11 | 2016-07-27 | 电子科技大学 | Production of photoelectric regulation metal nanoparticle and liquid crystal array structural box |
| CN109553066A (en) * | 2018-11-20 | 2019-04-02 | 上海交通大学 | A kind of method of nano material plasma surface transformation |
| CN109830886A (en) * | 2019-03-19 | 2019-05-31 | 北京工业大学 | A kind of nano plasma laser array and preparation method thereof of multi-cavity coupling enhancing |
| CN113013731A (en) * | 2021-02-19 | 2021-06-22 | 苏州科技大学 | Flexible electric pumping ZnO nanowire laser array structure and preparation method thereof |
| CN113013731B (en) * | 2021-02-19 | 2023-12-12 | 苏州科技大学 | Flexible electric pumping ZnO nanowire laser array structure and preparation method thereof |
| CN114256737A (en) * | 2021-12-15 | 2022-03-29 | 电子科技大学 | Narrow-linewidth DFB (distributed feed back) nano plasma laser and preparation method thereof |
| CN114256737B (en) * | 2021-12-15 | 2023-09-26 | 电子科技大学 | Narrow-linewidth DFB (distributed feedback) nano plasma laser and preparation method thereof |
| CN114678760A (en) * | 2022-03-25 | 2022-06-28 | 苏州浪潮智能科技有限公司 | Nanowire laser |
| CN114678760B (en) * | 2022-03-25 | 2023-11-07 | 苏州浪潮智能科技有限公司 | Nanowire laser |
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