CN104538520B - Led substrate structure and manufacturing method thereof - Google Patents
Led substrate structure and manufacturing method thereof Download PDFInfo
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- CN104538520B CN104538520B CN201410835299.2A CN201410835299A CN104538520B CN 104538520 B CN104538520 B CN 104538520B CN 201410835299 A CN201410835299 A CN 201410835299A CN 104538520 B CN104538520 B CN 104538520B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention provides an LED substrate structure and a manufacturing method of the LED substrate structure. In the LED substrate structure, a first GaN structure and a second GaN structure can enhance transmission of light, further the luminous efficiency of a flip LED chip is improved, and the luminance of the flip LED chip is improved accordingly; a third GaN structure has a condensation function, and consequently the axial luminance of the flip LED chip is improved; in addition, an AlGaN layer can inhibit defects in the second GaN structure and the third GaN structure from extending outwards, defects in the subsequent structures are reduced, and furthermore, the AlGaN layer can improve the breakdown resisting capacity of the flip LED chip and facilitates the improvement on the performance and reliability of the flip LED chip. The manufacturing method of the LED substrate structure is simple in process, high in operability and suitable for large-scale commercialized production, and accords with the future development road of the flip LED chips.
Description
Technical field
The present invention relates to semiconductor optoelectronic field of chip manufacture technology, more particularly to a kind of LED substrate structure and its making
Method.
Background technology
With the improvement of people ' s living standards, the enhancing of environmental consciousness, pursues not domestic environment, leisure and comfort level
It is disconnected to improve.Light fixture lamp decoration also gradually turns to the situation that decoration and illumination coexist by simple illumination functions, with illumination and decoration
The solid-state cold light source LED substitution conventional light sources of double dominant enter daily life turns into natural trend.
Since early 1990s are commercialized, by the development of twenties years, its structure tended to GaN base LED
It is ripe and perfect, disclosure satisfy that people at this stage to the demand of decorative lamp；But to replace conventional light source to enter illumination completely
Field, the raising of luminosity is but the endless pursuit of LED industry researcher.(approached in internal quantum efficiency
100%) on the premise of the space that can improve is limited, sight has been turned to external quantum efficiency by the researcher of LED industry, is proposed
Can improve the multiple technologies scheme and method of light extraction efficiency, for example patterned substrate technology, side wall coarsening technique, DBR technologies,
Optimization electrode structure, making 2 D photon crystal etc. on substrate or nesa coating.Wherein patterned substrate technology most into
Effect, especially since 2010, under the excitation and promotion of the various policies of government, either the dry method of cone structure is graphically served as a contrast
The wet method pattern substrate technology of bottom technology or Pyramid is obtained for development at full speed, its technique very into
It is ripe, and flat substrate was instead of completely in 2012, the main flow substrate as LED chip makes the crystal structure of LED and luminosity
It is obtained for revolutionary raising.
Patterned substrate technology will be reflected back by different faces from the light of luminous zone directive substrate using PSS figures,
The escape probability of light is improved, the light extraction efficiency of chip is improved.But, for flip-chip, avoid the need for reflecting light back into
Go, but need light transmission as much as possible to pass through substrate.
Compared to packed LED chip, flip-chip can solve the problems, such as that radiating is difficult, and commercialized LED chip grows mostly
On a sapphire substrate, then it is fixed on the package support, such LED chip is mainly by heat loss through conduction, and blue treasured
Stone lining bottom is due to thicker, so heat is difficult to derive, heat is gathered in chip can influence chip reliability, increase light decay and reduction
The chip life-span；Solve the problems, such as that light efficiency is low, electrode is in the light, the light extraction of chip can be reduced, current crowding can increase the voltage of chip,
These can all reduce the light efficiency of chip；Solve the problems, such as that encapsulation is complicated, the voltage of single led chip is 3V or so, it is therefore desirable to
Transformation or just its series connection, each of which increases encapsulation and the difficulty of application, technology difficulty is increased, and makes the reliability of whole chip
Property be deteriorated.
The inverted structure for having as many as such advantage will turn into following can greatly improve the most promising of LED luminosity
The structure of GaN base LED, but the LED chip of inverted structure is in N faces (namely reverse side) light extraction, due to sapphire refraction
Rate, so the light that epitaxial layer shoots out can reflect on sapphire and substrate interface, causes less than the refractive index of gallium nitride
More light out can not reduce light extraction efficiency, in order to solve this problem, it is necessary to design a kind of patterned substrate, reduce
From the reflection of the light of epitaxial layer directive substrate, increase its transmission, improve light extraction efficiency.
The content of the invention
It is an object of the invention to provide a kind of LED substrate structure and preparation method thereof, to solve existing flip LED core
The relatively low problem of piece light extraction efficiency.
In order to solve the above technical problems, the present invention provides a kind of LED substrate structure, the LED substrate structure includes：Lining
Bottom；It is formed at the multiple grooves in the substrate；Multiple GaN structures, are formed with a GaN knot in each recess
Structure；It is formed at the multiple 2nd GaN structures in multiple GaN structures；It is formed at the 3rd GaN of the multiple knots of the substrate surface
Structure, the multiple 3rd GaN structures are arranged with the multiple 2nd GaN spacing structures；And cover the multiple 2nd GaN knots
The AlGaN layer of structure and multiple 3rd GaN structures；Wherein, the material of each GaN structure and each the 2nd GaN structure is
Polycrystal GaN, the material of each the 3rd GaN structure is monocrystalline GaN.
Optionally, in described LED substrate structure, the section shape of each GaN structure for del or
Inverted trapezoidal.
Optionally, in described LED substrate structure, the section shape of each GaN structure is isosceles triangle
Or isosceles trapezoid.
Optionally, in described LED substrate structure, the section shape of each the 2nd GaN structure is inverted trapezoidal, and each the
The section shape of three GaN structures is trapezoid.
Optionally, in described LED substrate structure, multiple GaN structures, multiple 2nd GaN structures and multiple the
Three GaN structures are arranged in cyclic array.
Optionally, in described LED substrate structure, top surface and the 3rd GaN structures of multiple of multiple 2nd GaN structures
Top surface is flushed.
Optionally, in described LED substrate structure, the cross-sectional width of the AlGaN layer is wide with the section of the substrate
Degree is identical.
The present invention also provides a kind of preparation method of LED substrate structure, and the preparation method of the LED substrate structure includes：
Substrate is provided；
Multiple grooves are formed in the substrate；
One the oneth GaN structures are formed in each recess；
One the 2nd GaN structures are formed in each GaN structure, multiple 3rd GaN structures, institute are formed in substrate surface
Multiple 3rd GaN structures and multiple 2nd GaN spacing structures arrangements are stated, wherein, each GaN structure and each the 2nd GaN
The material of structure is polycrystal GaN, and the material of each the 3rd GaN structure is monocrystalline GaN；
AlGaN layer is formed, the AlGaN layer covers the multiple 2nd GaN structures and multiple 3rd GaN structures.
Optionally, in the preparation method of described LED substrate structure, multiple grooves are formed in the substrate to be included：
Mask layer is formed over the substrate；
Multiple openings, exposed portion substrate are formed in the mask layer；
The section substrate that etching is exposed, forms multiple grooves.
Optionally, in the preparation method of described LED substrate structure, the material of the mask layer is silica, nitrogen
At least one in SiClx and silicon oxynitride.
Optionally, in the preparation method of described LED substrate structure, the part exposed is etched by wet corrosion technique
Substrate, forms multiple grooves.
Optionally, in the preparation method of described LED substrate structure, the corrosive liquid of the wet corrosion technique is sulfuric acid
With the mixed liquor of phosphoric acid, in mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1~10:1；The temperature of the wet corrosion technique
Spend is 200 DEG C~300 DEG C；The process time of the wet corrosion technique is 1 minute~60 minutes.
Optionally, in the preparation method of described LED substrate structure, one the oneth GaN structures are formed in each recess
Including：
GaN material is deposited in each recess, to form a GaN structures；
Remove remaining mask layer.
Optionally, in the preparation method of described LED substrate structure, deposited in each recess by MOCVD techniques
GaN material.
Optionally, in the preparation method of described LED substrate structure, remaining mask is removed by wet corrosion technique
Layer.
Optionally, in the preparation method of described LED substrate structure, the corrosive liquid of the wet corrosion technique is hydrogen fluorine
Acid or BOE.
Optionally, in the preparation method of described LED substrate structure, one second is formed in each GaN structure
GaN structures, form multiple 3rd GaN structures, between the multiple 3rd GaN structures and multiple 2nd GaN structures in substrate surface
Include every arrangement：
By MOCVD process deposits GaN materials, to form one the 2nd GaN structures in each GaN structure, in lining
Basal surface forms multiple 3rd GaN structures, the multiple 3rd GaN structures and multiple 2nd GaN spacing structures arrangements.
Optionally, in the preparation method of described LED substrate structure, the section shape of the groove for del or
Person's inverted trapezoidal.
Optionally, in the preparation method of described LED substrate structure, the section shape of the groove is isoceles triangle
Shape or isosceles trapezoid.
Optionally, in the preparation method of described LED substrate structure, the section shape of each the 2nd GaN structure is for
Trapezoidal, the section shape of each the 3rd GaN structure is trapezoid.
Optionally, in the preparation method of described LED substrate structure, multiple GaN structures, the 2nd GaN of multiple knots
Structure and multiple 3rd GaN structures are arranged in cyclic array.
Optionally, in the preparation method of described LED substrate structure, the top surface of multiple 2nd GaN structures and multiple the
The top surface of three GaN structures is flushed.
Optionally, in the preparation method of described LED substrate structure, the cross-sectional width of the AlGaN layer and the lining
The cross-sectional width at bottom is identical.
In the LED substrate structure that the present invention is provided, a GaN structures and the 2nd GaN structures can increase the transmission of light,
So as to the light extraction efficiency of flip LED chips can be improved, and then improve the luminosity of flip LED chips；3rd GaN structures have
Optically focused is acted on, so as to the axial luminosity of flip LED chips can be improved；Additionally, AlGaN layer can suppress the 2nd GaN structures
And the 3rd defect in GaN structures stretches out, the defect in subsequent structural is reduced, further, AlGaN layer can also be improved
The breakdown characteristics of flip LED chips, are conducive to the raising of flip LED chips performance and reliability.In the LED that the present invention is provided
It is process is simple, workable in the preparation method of substrat structure, it is suitable to large-scale commercial production, meet flip LED chips
The road of future development.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the preparation method of the LED substrate structure of the embodiment of the present invention；
Fig. 2~Fig. 9 is showing for the device architecture formed in the preparation method of the LED substrate structure of the embodiment of the present invention one
It is intended to；
Figure 10~Figure 17 is the device architecture formed in the preparation method of the LED substrate structure of the embodiment of the present invention two
Schematic diagram.
Specific embodiment
Further is made to LED substrate structure proposed by the present invention and preparation method thereof below in conjunction with the drawings and specific embodiments
Describe in detail.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing
Non- accurately ratio is used in the form of simplifying very much and, is only used to conveniently, lucidly aid in illustrating of the invention implementation
The purpose of example.
Fig. 1 is refer to, it is the schematic flow sheet of the preparation method of the LED substrate structure of the embodiment of the present invention.Such as Fig. 1 institutes
Show, the preparation method of the LED substrate structure includes：
Step S10：Substrate is provided；
Step S11：Multiple grooves are formed in the substrate；
Step S12：One the oneth GaN structures are formed in each recess；
Step S13：One the 2nd GaN structures are formed in each GaN structure, the multiple 3rd is formed in substrate surface
GaN structures, the multiple 3rd GaN structures and multiple 2nd GaN spacing structures arrangements, wherein, each GaN structure and every
The material of individual 2nd GaN structures is polycrystal GaN, and the material of each the 3rd GaN structure is monocrystalline GaN；
Step S14：AlGaN layer is formed, the AlGaN layer covers the multiple 2nd GaN structures and the 3rd GaN of multiple knots
Structure.
Subsequently, will be with reference to the schematic diagram of the device architecture formed in the preparation method of LED substrate structure and two
Embodiment is described further.
【Embodiment one】
Fig. 2~Fig. 9 is refer to, it is the device formed in the preparation method of the LED substrate structure of the embodiment of the present invention one
The schematic diagram of part structure.
As shown in Figure 2, there is provided substrate 20, it is preferred that the substrate 20 is Sapphire Substrate.
Then, multiple grooves are formed in the substrate 20, specifically, refer to Fig. 3~Fig. 5.
First, as shown in figure 3, forming mask layer 21 on the substrate 20.Preferably, the material of the mask layer 21 is
At least one in silica, silicon nitride and silicon oxynitride.In the embodiment of the present application, the mask layer 21 can be by steaming
The techniques such as hair technique, sputtering technology, pecvd process or LPCVD techniques are formed.
Then, as shown in figure 4, forming multiple openings 22, exposed portion substrate 20 in the mask layer 21.Here, logical
Photoetching and etching technics are crossed, part mask layer 21 is removed, so as to form multiple openings 22 in remaining mask layer 21.
Then, as shown in figure 5, etching the section substrate 20 for exposing, multiple grooves 23 are formed.In the embodiment of the present application,
Multiple grooves 23 are arranged in cyclic array.Preferably, the section substrate 20 for exposing is etched by wet corrosion technique, is formed many
Individual groove 23.Specifically, the wet corrosion technique is using sulfuric acid and the mixed liquor of phosphoric acid, it is preferred that in mixed liquor, sulfuric acid
It is 3 with the volume ratio of phosphoric acid:1~10:1.In the embodiment of the present application, the temperature of the wet corrosion technique is 200 DEG C~300
DEG C, the process time of the wet corrosion technique is 1 minute~60 minutes.
In the embodiment of the present application, the section shape of the groove 23 is inverted trapezoidal, and more specifically, the groove 23 is cutd open
Face is shaped as down isosceles trapezoid.
Then, as shown in fig. 6, forming one the oneth GaN structures 24 in each groove 23, that is, the first GaN of multiple knots are formed
Structure 24, wherein, one the oneth GaN structures 24 are located in a groove 23.Thus, multiple GaN structures 24 are also in cyclic array
Arrangement.In the embodiment of the present application, GaN material is deposited by each groove 23, so as to form a GaN structures 24.
This, because groove 23 is on-plane surface, thus, GaN material is deposited in each groove 23, the GaN structures 24 for being formed
Material is polycrystal GaN.Preferably, GaN material is deposited in each groove 23 by MOCVD techniques.
Likewise, in the embodiment of the present application, the section shape of a GaN structures 24 is also inverted trapezoidal, more specifically
, the section shape of the groove 23 is isosceles trapezoid.
In the embodiment of the present application, after a GaN structures 24 are formed, remaining mask layer 21 is removed, is please accordingly referred to
Fig. 7.Preferably, remaining mask layer 21 is removed by wet corrosion technique.Wherein, the corrosive liquid of the wet corrosion technique is
Hydrofluoric acid or BOE (buffered oxide etch agent).
Then, as shown in figure 8, forming one the 2nd GaN structures 25 in each GaN structure 24, on the surface of substrate 20
Form multiple 3rd GaN structures 26, the multiple 3rd GaN structures 26 are intervally arranged with the 2nd GaN structures 25 of multiple, i.e., one the
Three GaN structures 26 and the arranged adjacent of a 2nd GaN structures 25.Here, form multiple 2nd GaN structures 25, wherein, one the
Two GaN structures 25 are located in one the oneth GaN structures 24.Therefore, multiple 2nd GaN structures 25 are also arranged in cyclic array, phase
Answer, multiple 3rd GaN structures 26 are also arranged in cyclic array.In the embodiment of the present application, the 2nd GaN structures 25 and
3rd GaN structures 26 are formed by MOCVD process deposits GaN materials.Wherein, the 2nd GaN structures 25 are due to being in polycrystal GaN
Formed in first GaN structures 24 of material, therefore, the material of the 2nd GaN structures 25 is also polycrystal GaN；And the 3rd GaN structures 26
Due to being formed in the surface of substrate 20 (i.e. plane), therefore, the material of the 3rd GaN structures 26 is monocrystalline GaN.
Due to the growth characteristics of GaN material, in the embodiment of the present application, the section shape of the 2nd GaN structures 25 is
Inverted trapezoidal；The section shape of the 3rd GaN structures 26 is trapezoid.Further, the top surface of multiple 2nd GaN structures 25 with
Multiple top surfaces of 3rd GaN structures 26 are flushed.
Then, as shown in figure 9, formed AlGaN layer 27, the AlGaN layer 27 cover the multiple 2nd GaN structures 25 and
Multiple 3rd GaN structures 26.Top surface and multiple top surfaces of 3rd GaN structures 26 i.e. in multiple 2nd GaN structures 25 form AlGaN
Layer 27.By the AlGaN layer 27, can cause that formed LED substrate structure 2 has more flat surface.Additionally, passing through
The technique for forming AlGaN layer 27, it is also possible to control the shape (height) of the 2nd GaN structures 25 and the 3rd GaN structures 26.In this Shen
Please be in embodiment, the cross-sectional width of the AlGaN layer 27 is identical with the cross-sectional width of the substrate 20.It is common, the substrate
20 is wafer (being shaped as circle), accordingly it is also possible to say the diameter of the AlGaN layer 27 and the diameter phase of the substrate 20
Together.
One LED substrate structure just can be formed by the preparation method of above-mentioned LED substrate structure, specifically can be with continued reference to Fig. 9.
The LED substrate structure 2 includes：Substrate 20；It is formed at the multiple GaN structures 24 in the substrate 20；It is formed at multiple
Multiple 2nd GaN structures 25 in first GaN structures 24；It is formed at multiple 3rd GaN structures 26 on the surface of the substrate 20, institute
Multiple 3rd GaN structures 26 are stated to be intervally arranged with the multiple 2nd GaN structures 25；And cover the multiple 2nd GaN knots
The AlGaN layer 27 of structure 25 and multiple 3rd GaN structures 26；Wherein, each GaN structure 24 and each the 2nd GaN structure 25
Material be polycrystal GaN, the material of each the 3rd GaN structure 26 is monocrystalline GaN.
Further, the section shape of each GaN structure 24 is isosceles trapezoid；Each the 2nd GaN structure 25
Section shape is inverted trapezoidal, and the section shape of each the 3rd GaN structure 26 is trapezoid.In the embodiment of the present application, Duo Ge
One GaN structures 24, multiple 2nd GaN structures 25 and multiple 3rd GaN structures 26 are arranged in cyclic array.Multiple second
The top surface of GaN structures 25 is flushed with the top surface of multiple 3rd GaN structures 26.The cross-sectional width of the AlGaN layer 27 and the lining
The cross-sectional width at bottom 20 is identical.
As fully visible, in LED substrate structure provided in an embodiment of the present invention, a GaN structures and the 2nd GaN structure energy
Enough increase the transmission of light, so as to the light extraction efficiency of flip LED chips can be improved, and then improve the luminosity of flip LED chips；
There is 3rd GaN structures optically focused to act on, so as to the axial luminosity of flip LED chips can be improved；Additionally, AlGaN layer can
The defect suppressed in the 2nd GaN structures and the 3rd GaN structures stretches out, and reduces the defect in subsequent structural, further,
AlGaN layer can also improve the breakdown characteristics of flip LED chips, be conducive to the raising of flip LED chips performance and reliability.
It is process is simple, workable in the preparation method of the LED substrate structure that the present invention is provided, it is suitable to large-scale commercial applications metaplasia
Produce, meet the road of flip LED chips future development.
【Embodiment two】
The present embodiment two is with the difference of embodiment one, and groove is shaped as del, namely a GaN structures
It is shaped as del.Specifically, refer to Figure 10~Figure 17, it is the making of the LED substrate structure of the embodiment of the present invention two
The schematic diagram of the device architecture formed in method.
As shown in Figure 10, there is provided substrate 30, it is preferred that the substrate 30 is Sapphire Substrate.
Then, multiple grooves are formed in the substrate 30, specifically, refer to Figure 11~Figure 13.
First, as shown in figure 11, mask layer 31 is formed on the substrate 30.Preferably, the material of the mask layer 31
It is at least one in silica, silicon nitride and silicon oxynitride.In the embodiment of the present application, the mask layer 31 can pass through
The techniques such as evaporation technology, sputtering technology, pecvd process or LPCVD techniques are formed.
Then, as shown in figure 12, multiple openings 32, exposed portion substrate 30 are formed in the mask layer 31.Here, logical
Photoetching and etching technics are crossed, part mask layer 31 is removed, so as to form multiple openings 32 in remaining mask layer 31.
Then, as shown in figure 13, the section substrate 30 for exposing is etched, multiple grooves 33 are formed.In the embodiment of the present application,
Multiple grooves 33 are arranged in cyclic array.Preferably, the section substrate 30 for exposing is etched by wet corrosion technique, is formed many
Individual groove 33.Specifically, the wet corrosion technique is using sulfuric acid and the mixed liquor of phosphoric acid, it is preferred that in mixed liquor, sulfuric acid
It is 3 with the volume ratio of phosphoric acid:1~10:1.In the embodiment of the present application, the temperature of the wet corrosion technique is 200 DEG C~300
DEG C, the process time of the wet corrosion technique is 1 minute~60 minutes.
In the embodiment of the present application, the section shape of the groove 33 is del, more specifically, the groove 23
Section shape is for isosceles triangle, i.e. drift angle are located at the lower section at base angle.
Then, as shown in figure 14, one the oneth GaN structures 34 are formed in each groove 33, that is, forms the first GaN of multiple knots
Structure 34, wherein, one the oneth GaN structures 34 are located in a groove 33.Thus, multiple GaN structures 34 are also in cyclic array
Arrangement.In the embodiment of the present application, GaN material is deposited by each groove 33, so as to form a GaN structures 34.
This, because groove 33 is on-plane surface, thus, GaN material is deposited in each groove 33, the GaN structures 34 for being formed
Material is polycrystal GaN.Preferably, GaN material is deposited in each groove 33 by MOCVD techniques.
Likewise, in the embodiment of the present application, the section shape of a GaN structures 34 is also del, more
Body, the section shape of the groove 33 is isosceles triangle.
In the embodiment of the present application, after a GaN structures 34 are formed, remaining mask layer 31 is removed, is please accordingly referred to
Figure 15.Preferably, remaining mask layer 31 is removed by wet corrosion technique.Wherein, the corrosive liquid of the wet corrosion technique
It is hydrofluoric acid or BOE (buffered oxide etch agent).
Then, as shown in figure 16, one the 2nd GaN structures 35 are formed in each GaN structure 34, on the surface of substrate 30
Form multiple 3rd GaN structures 36, the multiple 3rd GaN structures 36 are intervally arranged with the 2nd GaN structures 35 of multiple, i.e., one the
Three GaN structures 36 and the arranged adjacent of a 2nd GaN structures 35.Here, form multiple 2nd GaN structures 35, wherein, one the
Two GaN structures 35 are located in one the oneth GaN structures 34.Therefore, multiple 2nd GaN structures 35 are also arranged in cyclic array, phase
Answer, multiple 3rd GaN structures 36 are also arranged in cyclic array.In the embodiment of the present application, the 2nd GaN structures 35 and
3rd GaN structures 36 are formed by MOCVD process deposits GaN materials.Wherein, the 2nd GaN structures 35 are due to being in polycrystal GaN
Formed in first GaN structures 34 of material, therefore, the material of the 2nd GaN structures 35 is also polycrystal GaN；And the 3rd GaN structures 36
Due to being formed in the surface of substrate 30 (i.e. plane), therefore, the material of the 3rd GaN structures 36 is monocrystalline GaN.
Due to the growth characteristics of GaN material, in the embodiment of the present application, the section shape of the 2nd GaN structures 35 is
Inverted trapezoidal；The section shape of the 3rd GaN structures 36 is trapezoid.Further, the top surface of multiple 2nd GaN structures 35 with
Multiple top surfaces of 3rd GaN structures 36 are flushed.
Then, as shown in figure 17, AlGaN layer 37 is formed, the AlGaN layer 37 covers the multiple 2nd GaN structures 35
And multiple 3rd GaN structures 36.Top surface and multiple top surfaces of 3rd GaN structures 36 i.e. in multiple 2nd GaN structures 35 are formed
AlGaN layer 37.By the AlGaN layer 37, can cause that formed LED substrate structure 3 has more flat surface.This
Outward, the technique by forming AlGaN layer 37, it is also possible to control the shape of the 2nd GaN structures 35 and the 3rd GaN structures 36 (high
Degree).In the embodiment of the present application, the cross-sectional width of the AlGaN layer 37 is identical with the cross-sectional width of the substrate 30.Generally
, the substrate 30 is wafer (being shaped as circle), accordingly it is also possible to say the diameter and the substrate of the AlGaN layer 37
30 diameter is identical.
One LED substrate structure just can be formed by the preparation method of above-mentioned LED substrate structure, specifically can be with continued reference to figure
17.The LED substrate structure 3 includes：Substrate 30；It is formed at the multiple GaN structures 34 in the substrate 30；It is formed at many
Multiple 2nd GaN structures 35 in an individual GaN structures 34；Multiple 3rd GaN structures 36 on the surface of the substrate 30 are formed at,
The multiple 3rd GaN structures 36 are intervally arranged with the multiple 2nd GaN structures 35；And cover the multiple 2nd GaN
The AlGaN layer 37 of structure 35 and multiple 3rd GaN structures 36；Wherein, each GaN structure 34 and each the 2nd GaN structure
35 material is polycrystal GaN, and the material of each the 3rd GaN structure 36 is monocrystalline GaN.
Further, the section shape of each GaN structure 34 is isosceles triangle；Each the 2nd GaN structure 35
Section shape be inverted trapezoidal, the section shape of each the 3rd GaN structure 36 is trapezoid.In the embodiment of the present application, it is multiple
First GaN structures 34, multiple 2nd GaN structures 35 and multiple 3rd GaN structures 36 are arranged in cyclic array.Multiple second
The top surface of GaN structures 35 is flushed with the top surface of multiple 3rd GaN structures 36.The cross-sectional width of the AlGaN layer 37 and the lining
The cross-sectional width at bottom 30 is identical.
As fully visible, in LED substrate structure provided in an embodiment of the present invention, a GaN structures and the 2nd GaN structure energy
Enough increase the transmission of light, so as to the light extraction efficiency of flip LED chips can be improved, and then improve the luminosity of flip LED chips；
There is 3rd GaN structures optically focused to act on, so as to the axial luminosity of flip LED chips can be improved；Additionally, AlGaN layer can
The defect suppressed in the 2nd GaN structures and the 3rd GaN structures stretches out, and reduces the defect in subsequent structural, further,
AlGaN layer can also improve the breakdown characteristics of flip LED chips, be conducive to the raising of flip LED chips performance and reliability.
It is process is simple, workable in the preparation method of the LED substrate structure that the present invention is provided, it is suitable to large-scale commercial applications metaplasia
Produce, meet the road of flip LED chips future development.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Scope.
Claims (23)
1. a kind of LED substrate structure, it is characterised in that including：Substrate；It is formed at the multiple grooves in the substrate；Multiple the
One GaN structures, are formed with a GaN structure in each recess；It is formed in multiple GaN structures multiple second
GaN structures；It is formed at multiple 3rd GaN structures of the substrate surface, the multiple 3rd GaN structures and the multiple second
GaN spacing structures are arranged；And cover the AlGaN layer of the multiple 2nd GaN structures and multiple 3rd GaN structures；Wherein, often
The material of an individual GaN structures and each the 2nd GaN structure is polycrystal GaN, and the material of each the 3rd GaN structure is monocrystalline
GaN。
2. LED substrate structure as claimed in claim 1, it is characterised in that the section shape of each GaN structure is three
Angular or inverted trapezoidal.
3. LED substrate structure as claimed in claim 2, it is characterised in that the section shape of each GaN structure is to fall etc.
Lumbar triangle shape or isosceles trapezoid.
4. LED substrate structure as claimed in claim 2, it is characterised in that the section shape of each the 2nd GaN structure is to fall ladder
Shape, the section shape of each the 3rd GaN structure is trapezoid.
5. the LED substrate structure as any one of Claims 1 to 4, it is characterised in that multiple GaN structures, multiple
2nd GaN structures and multiple 3rd GaN structures are arranged in cyclic array.
6. the LED substrate structure as any one of Claims 1 to 4, it is characterised in that the top of multiple 2nd GaN structures
Face flushes with the top surface of multiple 3rd GaN structures.
7. the LED substrate structure as any one of Claims 1 to 4, it is characterised in that the section of the AlGaN layer is wide
Degree is identical with the cross-sectional width of the substrate.
8. a kind of preparation method of LED substrate structure, it is characterised in that including：
Substrate is provided；
Multiple grooves are formed in the substrate；
One the oneth GaN structures are formed in each recess；
One the 2nd GaN structures are formed in each GaN structure, multiple 3rd GaN structures are formed in substrate surface, it is described many
Individual 3rd GaN structures and multiple 2nd GaN spacing structures arrangements, wherein, each GaN structure and each the 2nd GaN structure
Material be polycrystal GaN, the material of each the 3rd GaN structure is monocrystalline GaN；
AlGaN layer is formed, the AlGaN layer covers the multiple 2nd GaN structures and multiple 3rd GaN structures.
9. the preparation method of LED substrate structure as claimed in claim 8, it is characterised in that form multiple in the substrate
Groove includes：
Mask layer is formed over the substrate；
Multiple openings, exposed portion substrate are formed in the mask layer；
The section substrate that etching is exposed, forms multiple grooves.
10. the preparation method of LED substrate structure as claimed in claim 9, it is characterised in that the material of the mask layer is two
At least one in silica, silicon nitride and silicon oxynitride.
The preparation method of 11. LED substrate structures as claimed in claim 9, it is characterised in that etched by wet corrosion technique
The section substrate for exposing, forms multiple grooves.
The preparation method of 12. LED substrate structures as claimed in claim 11, it is characterised in that the wet corrosion technique
Corrosive liquid is the mixed liquor of sulfuric acid and phosphoric acid, and in mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1~10:1；The wet method
The temperature of etching process is 200 DEG C~300 DEG C；The process time of the wet corrosion technique is 1 minute~60 minutes.
The preparation method of 13. LED substrate structures as claimed in claim 9, it is characterised in that form one the in each recess
One GaN structures include：
GaN material is deposited in each recess, to form a GaN structures；
Remove remaining mask layer.
The preparation method of 14. LED substrate structures as claimed in claim 13, it is characterised in that by MOCVD techniques at each
GaN material is deposited in groove.
The preparation method of 15. LED substrate structures as claimed in claim 13, it is characterised in that gone by wet corrosion technique
Except remaining mask layer.
The preparation method of 16. LED substrate structures as claimed in claim 15, it is characterised in that the wet corrosion technique
Corrosive liquid is hydrofluoric acid or BOE.
The preparation method of 17. LED substrate structures as claimed in claim 8, it is characterised in that in each GaN structure
One the 2nd GaN structures are formed, multiple 3rd GaN structures, the multiple 3rd GaN structures and multiple second are formed in substrate surface
The arrangement of GaN spacing structures includes：
By MOCVD process deposits GaN materials, to form one the 2nd GaN structures in each GaN structure, in substrate table
Face forms multiple 3rd GaN structures, the multiple 3rd GaN structures and multiple 2nd GaN spacing structures arrangements.
The preparation method of 18. LED substrate structures as claimed in claim 8, it is characterised in that the section shape of the groove is
Del or inverted trapezoidal.
The preparation method of 19. LED substrate structures as claimed in claim 18, it is characterised in that the section shape of the groove
To fall isosceles triangle or isosceles trapezoid.
The preparation method of 20. LED substrate structures as claimed in claim 18, it is characterised in that each the 2nd GaN structure is cutd open
Face is shaped as inverted trapezoidal, and the section shape of each the 3rd GaN structure is trapezoid.
The preparation method of the 21. LED substrate structure as any one of claim 8~20, it is characterised in that multiple first
GaN structures, multiple 2nd GaN structures and multiple 3rd GaN structures are arranged in cyclic array.
The preparation method of the 22. LED substrate structure as any one of claim 8~20, it is characterised in that multiple second
The top surface of GaN structures is flushed with the top surface of multiple 3rd GaN structures.
The preparation method of the 23. LED substrate structure as any one of claim 8~20, it is characterised in that described
The cross-sectional width of AlGaN layer is identical with the cross-sectional width of the substrate.
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