CN104534977A - Side wall roughness detecting method and device for SOI optical waveguide - Google Patents
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
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Abstract
Description
技术领域 technical field
本发明属于微纳器件的侧壁粗糙度测量技术，具体涉及一种用于SOI光波导的侧壁粗糙度检测方法和装置。 The invention belongs to the sidewall roughness measurement technology of micro-nano devices, and in particular relates to a sidewall roughness detection method and device for SOI optical waveguides.
背景技术 Background technique
对于微纳器件侧壁的粗糙度测量，国内外现有的技术包括：通过电子显微镜对器件结构进行观察并利用电镜照片进行粗糙度估算，或者通过原子力显微镜扫描成像。 For the roughness measurement of the sidewall of micro-nano devices, the existing technologies at home and abroad include: observing the device structure through an electron microscope and using electron microscope photos to estimate the roughness, or scanning and imaging through an atomic force microscope.
基于电子显微镜估算的方法虽然简单，但是测量不够准确；普通的原子力显微镜虽然可以把测试区域放大上千倍，但是对于侧壁粗糙度的计算，只能通过破坏器件的结构来进行测量；尤其对于低矮的微纳结构侧壁，探针的运动与受力受到底面的影响，无法实现准确，快速成像。 Although the estimation method based on the electron microscope is simple, the measurement is not accurate enough; although the ordinary atomic force microscope can magnify the test area thousands of times, the calculation of the sidewall roughness can only be measured by destroying the structure of the device; especially for Due to the low micro-nano structure sidewall, the movement and force of the probe are affected by the bottom surface, which cannot achieve accurate and fast imaging.
针对这些问题，出现了一些解决方案，其中：专利（201410310642.1）介绍了一种基于原子力显微镜的测试方法，该方法改造了原子力显微镜的探针架，使得研究者可以根据侧壁角度需求，设置探针旋转角度，在不破坏样品的前提下，实现对微纳结构大角度侧壁的表面表征；专利（201410364545.0）则提出了一种利用电容变化检测刻蚀侧壁的方法，该方法虽然不需要破坏样品结构，但是需要在功能区域制作工序之前添加额外的工艺流程。 Aiming at these problems, there are some solutions, among which: the patent (201410310642.1) introduces a test method based on atomic force microscope. The rotation angle of the needle can realize the surface characterization of the large-angle sidewall of the micro-nano structure without destroying the sample; the patent (201410364545.0) proposes a method of detecting the etched sidewall by capacitance change, although this method does not require Destroy the sample structure, but need to add an additional process flow before the functional area fabrication process.
因此，上述技术在原有的仪器或者工艺上进行改造，不仅工艺、设备较复杂，而且对于低矮侧壁仍然无法实现粗糙度测量。 Therefore, the above-mentioned technology is modified on the original instrument or process, not only the process and equipment are more complicated, but also the roughness measurement of the low side wall is still impossible.
发明内容 Contents of the invention
本发明克服现有技术存在的不足，所要解决的技术问题为：提供一种工艺、设备简单，能够对低矮侧壁进行测量的用于SOI光波导的粗糙度检测方法和装置。 The present invention overcomes the deficiencies in the prior art, and the technical problem to be solved is: to provide a roughness detection method and device for SOI optical waveguide which have simple process and equipment and can measure low sidewalls.
为了解决上述技术问题，本发明采用的技术方案为：一种用于SOI光波导的侧壁粗糙度检测方法，所述的SOI光波导包括其上设有二氧化硅掩埋层的硅衬底，所述二氧化硅掩埋层上设有光波导，所述检测方法包括以下步骤：步骤S1.1：利用绝缘材料，制备开口向下的槽型绝缘盖；步骤S1.2：通过键合工艺，将槽型绝缘盖盖在光波导上，使得光波导的待测侧壁与槽型绝缘盖和二氧化硅掩埋层之间形成两端开口的封闭微流道；步骤S1.3：在微流道中通入离子液体或者极性液体，使得液体在微流道内沿着光波导的整个待测侧壁流动；步骤S1.4：测量光波导两端的电势差，根据流体流过硅光波导侧壁时硅光波导两端的电势差与硅光波导侧壁粗糙度之间的非线性关系，得出光波导的待测侧壁的粗糙度。 In order to solve the above technical problems, the technical solution adopted in the present invention is: a method for detecting sidewall roughness of an SOI optical waveguide, wherein the SOI optical waveguide includes a silicon substrate provided with a silicon dioxide buried layer, The silicon dioxide buried layer is provided with an optical waveguide, and the detection method includes the following steps: step S1.1: using an insulating material to prepare a groove-shaped insulating cover with an opening downward; step S1.2: through a bonding process, Cover the optical waveguide with a slot-type insulating cover, so that a closed micro-flow channel with openings at both ends is formed between the side wall of the optical waveguide to be tested, the slot-type insulating cover and the silicon dioxide buried layer; step S1.3: in the micro-flow The ionic liquid or polar liquid is passed into the channel, so that the liquid flows along the entire side wall of the optical waveguide to be tested in the micro-channel; Step S1.4: Measure the potential difference at both ends of the optical waveguide, according to when the fluid flows through the side wall of the silicon optical waveguide The nonlinear relationship between the potential difference at both ends of the silicon optical waveguide and the roughness of the side wall of the silicon optical waveguide is used to obtain the roughness of the side wall of the optical waveguide to be measured.
步骤S1.3中的极性液体为乙醇，或为去离子水；步骤S1.1中，槽型绝缘盖的制备工艺为模塑法，或为热压法，或为LIGA技术，或为激光烧蚀技术，或为软光刻法；步骤步骤S1.1中，制备槽型绝缘盖的绝缘材料为高分子聚合物，所述的高分子聚合物为热塑性聚合物，或为固化型聚合物，或为溶剂挥发型聚合物；所述热塑性聚合物为聚酰胺，或为聚甲基丙烯酰甲酯，或为聚碳酸酯，或为聚丙乙烯；所述固化型聚合物为聚二甲基硅氧烷，或为环氧树脂，或为聚氨酯；所述溶剂挥发型聚合物为丙烯酸，或为橡胶，或为氟塑料；步骤S1.3中的离子液体为盐酸，或为氯化钾，或为氯化钠。 The polar liquid in step S1.3 is ethanol, or deionized water; in step S1.1, the preparation process of the slot-type insulating cover is molding method, or hot pressing method, or LIGA technology, or laser Ablation technology, or soft photolithography; in step S1.1, the insulating material for preparing the slot-type insulating cover is a high molecular polymer, and the high molecular polymer is a thermoplastic polymer, or a curable polymer , or a solvent-volatile polymer; the thermoplastic polymer is polyamide, or polymethacrylmethyl ester, or polycarbonate, or polypropylene; the curable polymer is polydimethyl Siloxane, or epoxy resin, or polyurethane; the solvent-volatile polymer is acrylic acid, or rubber, or fluoroplastic; the ionic liquid in step S1.3 is hydrochloric acid, or potassium chloride, or sodium chloride.
一种用于SOI光波导的侧壁粗糙度检测装置，所述的SOI光波导包括其上设有二氧化硅掩埋层的硅衬底，所述二氧化硅掩埋层上设有光波导，所述光波导上盖有槽型绝缘盖，所述光波导的待测侧壁与所述槽型绝缘盖和所述二氧化硅掩埋层之间形成两端开口的封闭微流道，所述微流道内具有沿着光波导待测侧壁流动的液体，所述光波导的两端并接有电压检测器；所述槽型绝缘盖的制备材料为热塑性聚合物，或为固化型聚合物，或为溶剂挥发型聚合物。 A side wall roughness detection device for an SOI optical waveguide, the SOI optical waveguide includes a silicon substrate on which a silicon dioxide burying layer is arranged, and the silicon dioxide burying layer is provided with an optical waveguide, the The optical waveguide is covered with a groove-shaped insulating cover, and a closed micro-channel with openings at both ends is formed between the side wall of the optical waveguide to be tested, the groove-shaped insulating cover, and the silicon dioxide buried layer. There is liquid flowing along the side wall of the optical waveguide to be tested in the flow channel, and a voltage detector is connected to the two ends of the optical waveguide; the preparation material of the groove-shaped insulating cover is a thermoplastic polymer, or a cured polymer, Or a solvent-volatile polymer.
本发明与现有技术相比具有以下有益效果： Compared with the prior art, the present invention has the following beneficial effects:
本发明中，当需要测量SOI光波导的侧壁粗糙度时，仅需在整个光波导的外部封装绝缘材料形成槽型绝缘盖，然后将槽型绝缘盖盖在光波导上，通过键合工艺将槽型绝缘盖的底端与其上设有光波导的二氧化硅掩埋层连接在一起，使得光波导的待测侧壁、槽型绝缘盖和二氧化硅掩埋层三者之间形成一个两端开口的封闭微流道，再在微流道中通入离子液体或者极性液体，使得上述液体在微流道内沿着光波导的整个待测侧壁流动，最后通过电压检测器测量出光波导两端的电势差，根据流体流过硅光波导硅光波导两端的电势差与该硅光波导侧壁粗糙度之间的非线性关系，即可得出光波导待测侧壁的粗糙度；相较于传统的微纳器件侧壁粗糙度的测量方法与装置，本发明制作工艺和设备较简单，不需要在原有的仪器和工艺上进行改造即可实现对低矮的侧壁进行粗糙度测量。 In the present invention, when it is necessary to measure the sidewall roughness of the SOI optical waveguide, it is only necessary to package the insulating material on the outside of the entire optical waveguide to form a groove-shaped insulating cover, and then cover the groove-shaped insulating cover on the optical waveguide, through the bonding process Connect the bottom end of the groove-type insulating cover with the silicon dioxide burying layer on which the optical waveguide is arranged, so that a two-dimensional structure is formed between the side wall of the optical waveguide to be tested, the groove-type insulating cover and the silicon dioxide burying layer. A closed microchannel with an open end, and then ionic liquid or polar liquid is introduced into the microchannel, so that the above-mentioned liquid flows along the entire side wall of the optical waveguide to be tested in the microchannel, and finally the two sides of the optical waveguide are measured by a voltage detector. The potential difference at the end of the silicon optical waveguide, according to the nonlinear relationship between the potential difference between the two ends of the silicon optical waveguide when the fluid flows through the silicon optical waveguide and the roughness of the side wall of the silicon optical waveguide, the roughness of the side wall of the optical waveguide to be tested can be obtained; compared with the traditional The method and device for measuring the roughness of the side wall of a micro-nano device, the manufacturing process and equipment of the present invention are relatively simple, and the roughness measurement of the low side wall can be realized without modification of the original instrument and process.
附图说明 Description of drawings
下面结合附图对本发明做进一步详细的说明； Below in conjunction with accompanying drawing, the present invention is described in further detail;
图1为本发明的结构示意图； Fig. 1 is a structural representation of the present invention;
图2为本发明的一个标定试样的结构示意图； Fig. 2 is the structural representation of a calibration sample of the present invention;
图3为图2中的标定试样的原子力成像图； Fig. 3 is the atomic force imaging diagram of the calibration sample in Fig. 2;
图4为图2中的标定试样被进行表面光滑处理后的原子力成像图； Fig. 4 is the atomic force imaging diagram after the calibration sample in Fig. 2 is subjected to surface smoothing treatment;
图5为图2中的标定试样被进一步进行表面光滑处理后的原子力成像图； Fig. 5 is the atomic force imaging diagram after the calibration sample in Fig. 2 is further subjected to surface smoothing treatment;
图6为本发明中光波导的一种结构示意图； Fig. 6 is a kind of structural representation of optical waveguide in the present invention;
图7为本发明中光波导的另一种结构示意图； Fig. 7 is another structural schematic view of the optical waveguide in the present invention;
图8为本发明中光波导的再一种结构示意图； Fig. 8 is another structural schematic diagram of the optical waveguide in the present invention;
图9为图8中的光波导被切割后的结构示意图； FIG. 9 is a schematic structural view of the optical waveguide in FIG. 8 after being cut;
图中：1为硅衬底，2为二氧化硅掩埋层，3为光波导，4为槽型绝缘盖，5为微流道，6为电压检测器，7为硅基底，8为二氧化硅绝缘层，9为硅薄膜，10为槽型外壳，11为通道，12为取样长度段。 In the figure: 1 is the silicon substrate, 2 is the silicon dioxide buried layer, 3 is the optical waveguide, 4 is the groove type insulating cover, 5 is the micro flow channel, 6 is the voltage detector, 7 is the silicon substrate, 8 is the dioxide Silicon insulating layer, 9 is a silicon film, 10 is a grooved shell, 11 is a channel, and 12 is a sampling length section.
具体实施方式 Detailed ways
如图1所示，一种用于SOI光波导的侧壁粗糙度检测装置，所述的SOI光波导包括其上设有二氧化硅掩埋层2的硅衬底1，所述二氧化硅掩埋层2上设有光波导3，所述光波导3上盖有槽型绝缘盖4，所述光波导3的待测侧壁与所述槽型绝缘盖4和所述二氧化硅掩埋层2之间形成两端开口的封闭微流道5，所述微流道5内具有沿着光波导3待测侧壁流动的液体，所述光波导3的两端并接有电压检测器6，其中，所述的光波导3可以通过反应离子刻蚀（RIE）、感应耦合等离子体（ICP）、离子束溅射刻蚀等各向异性干法刻蚀工艺加工制成，所述的微流道5可以是单独的通道也可以是连通的通道。 As shown in Fig. 1, a kind of side wall roughness detection device for SOI optical waveguide, described SOI optical waveguide comprises the silicon substrate 1 that is provided with silicon dioxide burying layer 2 on it, and described silicon dioxide burying An optical waveguide 3 is provided on the layer 2, and the optical waveguide 3 is covered with a groove-shaped insulating cover 4, and the side wall of the optical waveguide 3 to be measured is in contact with the groove-shaped insulating cover 4 and the silicon dioxide buried layer 2. A closed micro-channel 5 with openings at both ends is formed between them, the micro-channel 5 has liquid flowing along the side wall of the optical waveguide 3 to be tested, and the two ends of the optical waveguide 3 are connected with a voltage detector 6, Wherein, the optical waveguide 3 can be processed by reactive ion etching (RIE), inductively coupled plasma (ICP), ion beam sputtering etching and other anisotropic dry etching processes, and the microfluidic Lane 5 can be a single channel or a connected channel.
一种用于SOI光波导的侧壁粗糙度检测方法，所述的SOI光波导包括其上设有二氧化硅掩埋层2的硅衬底1，所述二氧化硅掩埋层2上设有光波导3，所述检测方法包括以下步骤： A method for detecting sidewall roughness of an SOI optical waveguide, the SOI optical waveguide includes a silicon substrate 1 provided with a silicon dioxide buried layer 2 thereon, and the silicon dioxide buried layer 2 is provided with an optical Waveguide 3, the detection method includes the following steps:
步骤S1.1：利用绝缘材料，制备开口向下的槽型绝缘盖4； Step S1.1: using an insulating material to prepare a groove-shaped insulating cover 4 with the opening facing downward;
步骤S1.2：通过键合工艺，将槽型绝缘盖4盖在光波导3上，使得光波导3的待测侧壁与槽型绝缘盖4和二氧化硅掩埋层2之间形成两端开口的封闭微流道5； Step S1.2: Cover the groove-shaped insulating cover 4 on the optical waveguide 3 through a bonding process, so that two ends are formed between the side wall of the optical waveguide 3 to be tested, the groove-shaped insulating cover 4 and the silicon dioxide buried layer 2 Open closed micro-channel 5;
步骤S1.3：在微流道5中通入离子液体或者极性液体，使得液体在微流道5内沿着光波导3的整个待测侧壁流动； Step S1.3: injecting ionic liquid or polar liquid into the microchannel 5, so that the liquid flows along the entire side wall of the optical waveguide 3 to be tested in the microchannel 5;
步骤S1.4：测量光波导3两端的电势差，根据流体流过硅光波导侧壁时硅光波导两端的电势差与硅光波导侧壁粗糙度之间的非线性关系，得出光波导3的待测侧壁的粗糙度。 Step S1.4: Measure the potential difference at both ends of the optical waveguide 3, and obtain the waiting time of the optical waveguide 3 according to the nonlinear relationship between the potential difference at both ends of the silicon optical waveguide and the roughness of the silicon optical waveguide side wall when the fluid flows through the side wall of the silicon optical waveguide. Measure the roughness of the sidewall.
具体地，步骤S1.3中的离子液体可为盐酸、氯化钾或者氯化钠，极性液体可为乙醇或者去离子水；步骤步骤S1.1中，槽型绝缘盖4的制备工艺为模塑法，或为热压法，或为LIGA技术，或为激光烧蚀技术，或为软光刻法；此外，步骤步骤S1.1中，制备槽型绝缘盖4的绝缘材料为高分子聚合物，所述的高分子聚合物可为聚酰胺、聚甲基丙烯酰甲酯、聚碳酸酯、聚丙乙烯等热塑性聚合物，可为聚二甲基硅氧烷、环氧树脂、聚氨酯等固化型聚合物，也可为丙烯酸、橡胶、氟塑料等溶剂挥发型聚合物。 Specifically, the ionic liquid in step S1.3 can be hydrochloric acid, potassium chloride or sodium chloride, and the polar liquid can be ethanol or deionized water; in step S1.1, the preparation process of the slot-type insulating cover 4 is as follows: Molding method, or hot pressing method, or LIGA technology, or laser ablation technology, or soft photolithography; in addition, in step S1.1, the insulating material for preparing the slot-type insulating cover 4 is polymer Polymer, the high molecular polymer can be thermoplastic polymers such as polyamide, polymethacrylmethyl ester, polycarbonate, polypropylene, can be polydimethylsiloxane, epoxy resin, polyurethane etc. Curing polymers can also be solvent-volatile polymers such as acrylic, rubber, and fluoroplastics.
根据已有文献报道（Persson BNJ, Tartaglino U, Tosatti E, Ueba H. Electronic friction and liquid-flow-induced voltage in nanotubes. Phys Rev B. 2004.），流体流过非绝缘固相材料表面时，流固两相界面存在着“电摩擦”，使得非绝缘固相材料两端的电势差与该非绝缘固相材料表面粗糙度之间具有非线性关系，具体地，当流体与半导体固体接触时，液体分子会在液固界面形成类固体单分子层，在流体作用下，该单分子层发生纳米级粘滑运动，而相应的物理吸附离子通过吸附和解附产生定向移动，从而使半导体材料内部产生电子定向移动，由于“电摩擦”与非绝缘固相材料表面的粗糙度成非线性关系，故可以通过测量流体诱导电势差（非绝缘固相材料两端的电势差）来评估固相材料表面粗糙度。 According to existing literature reports (Persson BNJ, Tartaglino U, Tosatti E, Ueba H. Electronic friction and liquid-flow-induced voltage in nanotubes. Phys Rev B. 2004.), when the fluid flows over the surface of the non-insulating solid phase material, there is "electric friction" at the fluid-solid two-phase interface, so that the potential difference between the two ends of the non-insulating solid phase material and the non-insulating solid phase There is a nonlinear relationship between the surface roughness of the material. Specifically, when the fluid contacts the semiconductor solid, the liquid molecules will form a solid-like monolayer at the liquid-solid interface. Under the action of the fluid, the monolayer will undergo nanoscale stick-slip movement, and the corresponding physical adsorption ions produce directional movement through adsorption and desorption, so that electrons move directional within the semiconductor material. Since "electric friction" has a nonlinear relationship with the surface roughness of non-insulating solid-phase materials, it can be measured by Fluid-induced potential difference (potential difference across a non-insulating solid-phase material) to evaluate the surface roughness of a solid-phase material.
图2为本发明的一个标定试样的结构示意图，图中：在硅基底7上生长有一层二氧化硅绝缘层8，二氧化硅绝缘层8上具有一层硅薄膜9（相当于本发明中的光波导3的待测侧壁），硅薄膜9上设置有槽型外壳10，槽型外壳10由绝缘材料制成，槽型外壳10与硅薄膜9之间形成一个两端开口的封闭通道11，选取取样长度段12内轮廓峰顶线至轮廓谷底线之间的最大高度Ry为表面粗糙度评定参数，如图3所示，取样长度段12的粗糙度Ry为19.12nm，在通道11内通入0.6M的溶液速度为100mm/s的KCl溶液，此时测量取样长度段12两端的电势差，为23.4mv；将图2中的标定试样进行表面光滑处理后，如图4所示，取样长度段12的粗糙度Ry为10.05nm，通入0.6M的溶液速度为100mm/s的KCl溶液后，测量得到取样长度段12两端的电势差为9.6mv；将图2中的标定试样进一步进行表面光滑处理后，如图5所示，取样长度段12的粗糙度Ry为0.545nm，通入0.6M的溶液速度为100mm/s的KCl溶液后，测量得到取样长度段12两端的电势差为0.6mv。 Fig. 2 is the structure schematic diagram of a calibration sample of the present invention, among the figure: on the silicon substrate 7, a layer of silicon dioxide insulating layer 8 is grown, and a layer of silicon film 9 is arranged on the silicon dioxide insulating layer 8 (equivalent to the present invention The side wall of the optical waveguide 3 in the middle), the silicon film 9 is provided with a grooved housing 10, the grooved housing 10 is made of insulating material, and a closed seal with two ends open is formed between the grooved housing 10 and the silicon thin film 9. In channel 11, the maximum height Ry between the peak line of the sampling length section 12 and the bottom line of the profile valley is selected as the surface roughness evaluation parameter. As shown in Figure 3, the roughness Ry of the sampling length section 12 is 19.12nm. Pass into 0.6M solution velocity in 11 and be the KCl solution of 100mm/s, measure the potential difference at the two ends of sampling length section 12 at this moment, be 23.4mv; Show, the roughness Ry of sampling length section 12 is 10.05nm, after the KCl solution that is 100mm/s is passed into the solution speed of 0.6M, measure the potential difference that obtains sampling length section 12 two ends to be 9.6mv; After the sample is further subjected to surface smoothing treatment, as shown in Figure 5, the roughness Ry of the sampling length section 12 is 0.545nm. The potential difference is 0.6mv.
本实施例是针对典型的SOI光波导器件所做的设计，本发明可应用于相似器件或相似领域，光波导3可以为图6~图8的各种形式，若光波导3为图8所示的环形腔结构，当进行内壁粗糙度测量时，需事先使用激光灯工艺进行切割，形成图9的结构，再对裸漏的硅衬底进行绝缘密封。 This embodiment is designed for a typical SOI optical waveguide device. The present invention can be applied to similar devices or similar fields. The optical waveguide 3 can be in various forms as shown in FIGS. For the annular cavity structure shown, when measuring the roughness of the inner wall, it needs to be cut with a laser lamp process in advance to form the structure shown in Figure 9, and then the exposed silicon substrate is insulated and sealed.
综上所述，本发明既不需要破坏样品结构，也不需要添加额外的工艺流程，整个工艺、设备较简单，能够方便、准确地测量低矮侧壁的粗糙度，具有突出的实质性特点和显著的进步；上面结合附图对本发明的实施例作了详细说明，但是本发明并不限于上述实施例，在本领域普通技术人员所具备的知识范围内，还可以在不脱离本发明宗旨的前提下作出各种变化。 In summary, the present invention does not need to destroy the sample structure, nor does it need to add additional process flow, the whole process and equipment are relatively simple, and it can conveniently and accurately measure the roughness of the low side wall, which has outstanding substantive features and remarkable progress; above in conjunction with accompanying drawing the embodiment of the present invention has been described in detail, but the present invention is not limited to above-mentioned embodiment, within the knowledge scope that those of ordinary skill in the art have, can also not depart from the purpose of the present invention Various changes are made.
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