CN104534977A - Side wall roughness detecting method and device for SOI optical waveguide - Google Patents
Side wall roughness detecting method and device for SOI optical waveguide Download PDFInfo
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- CN104534977A CN104534977A CN201410794625.XA CN201410794625A CN104534977A CN 104534977 A CN104534977 A CN 104534977A CN 201410794625 A CN201410794625 A CN 201410794625A CN 104534977 A CN104534977 A CN 104534977A
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Abstract
The invention relates to a side wall roughness detecting method and device for an SOI optical waveguide. The technology and equipment are simple. By the adoption of the method and device, a low side wall can be measured. According to the technical scheme, a groove type insulating cover which is open downwards is manufactured with an insulating material and covers the optical waveguide through the bonding technology, and then a closed micro-channel with two ends open is formed between the side wall, to be detected, of the optical waveguide and the groove type insulating cover and a silicon dioxide buried layer; ionic liquid or polar liquid is introduced into the micro-channel so that the liquid can flow along the whole side wall, to be detected, of the optical waveguide in the micro-channel; the potential difference between the two ends of the optical waveguide is measured, and the roughness of the side wall, to be detected, of the optical waveguide is obtained according to the non-linear relationship between the potential difference between the two ends of the silicon optical waveguide when the liquid flows through the side wall of the silicon optical waveguide and the roughness of the side wall of the silicon optical waveguide. The method and device are suitable for measurement of MEMS devices.
Description
Technical field
The invention belongs to the sidewall roughness measuring technique of micro-nano device, be specifically related to a kind of sidewall roughness detection method for SOI optical waveguide and device.
Background technology
For the roughness concentration of micro-nano device sidewall, domestic and international existing technology comprises: to be observed device architecture by electron microscope and utilize electromicroscopic photograph to carry out roughness estimation, or by afm scan imaging.
Although simple based on the method for electron microscope estimation, measure not accurate enough; Although common atomic force microscope can amplify thousands of times test zone, for the calculating of sidewall roughness, can only be measured by the structure destroying device; Especially for short micro-nano structure sidewall, the motion of probe and the stressed impact being subject to bottom surface, cannot realize accurately, fast imaging.
For these problems, some solutions are there are, wherein: patent (201410310642.1) describes a kind of method of testing based on atomic force microscope, the method has transformed the probe carriage of atomic force microscope, make researcher can according to Sidewall angles demand, the probe anglec of rotation is set, under the prerequisite not destroying sample, realizes the Surface Characterization to micro-nano structure wide-angle sidewall; Patent (201410364545.0) then proposes a kind of method utilizing capacitance variations detection etch sidewall, although the method does not need to destroy sample structure, needs to add extra technological process before functional area production process.
Therefore, above-mentioned technology is transformed on original instrument or technique, and not only technique, equipment are more complicated, and still cannot realize roughness concentration for short sidewall.
Summary of the invention
The present invention overcomes the deficiency that prior art exists, and technical matters to be solved is: provide a kind of technique, equipment simple, the roughness detecting method for SOI optical waveguide can measured short sidewall and device.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is: a kind of sidewall roughness detection method for SOI optical waveguide, described SOI optical waveguide comprises the silicon substrate which is provided with silica buried layer, described silica buried layer is provided with optical waveguide, described detection method comprises the following steps: step S1.1: utilize insulating material, prepares the groove typed insulation lid that Open Side Down; Step S1.2: by bonding technology, covers in optical waveguide by groove typed insulation lid, makes the closed fluid channel forming both ends open between the sidewall to be measured of optical waveguide and groove typed insulation lid and silica buried layer; Step S1.3: pass into ionic liquid or polar liquid in fluid channel, makes liquid wall flow whole to be measured along optical waveguide in fluid channel; Step S1.4: measure the electric potential difference at optical waveguide two ends, nonlinear relationship when flowing through silicon optical waveguide sidewall according to fluid between the electric potential difference at silicon optical waveguide two ends and silicon optical waveguide sidewall roughness, draws the roughness of the sidewall to be measured of optical waveguide.
Polar liquid in step S1.3 is ethanol, or is deionized water; In step S1.1, the preparation technology of groove typed insulation lid is method of molding, or is pressure sintering, or is LIGA technology, or is laser ablation technology, or is soft lithography; In step step S1.1, the insulating material preparing grooved insulating lid is high molecular polymer, and described high molecular polymer is thermoplastic polymer, or is curing type polymkeric substance, or is solvent volatile-type polymkeric substance; Described thermoplastic polymer is polyamide, or is polymethyl acyl methyl esters, or is polycarbonate, or is poly-third ethene; Described curing type polymkeric substance is dimethyl silicone polymer, or is epoxy resin, or is polyurethane; Described solvent volatile-type polymkeric substance is acrylic acid, or is rubber, or is fluoroplastic; Ionic liquid in step S1.3 is hydrochloric acid, or is potassium chloride, or is sodium chloride.
A kind of sidewall roughness pick-up unit for SOI optical waveguide, described SOI optical waveguide comprises the silicon substrate which is provided with silica buried layer, described silica buried layer is provided with optical waveguide, described optical waveguide is stamped groove typed insulation lid, the sidewall to be measured of described optical waveguide and form the closed fluid channel of both ends open between described groove typed insulation lid and described silica buried layer, have the liquid along optical waveguide wall flow to be measured in described fluid channel, the two ends of described optical waveguide are also connected to voltage-level detector; The material of preparing of described groove typed insulation lid is thermoplastic polymer, or is curing type polymkeric substance, or is solvent volatile-type polymkeric substance.
The present invention compared with prior art has following beneficial effect:
In the present invention, when needing the sidewall roughness measuring SOI optical waveguide, only need form groove typed insulation lid at the outer enclosure insulating material of whole optical waveguide, then groove typed insulation lid is covered in optical waveguide, by bonding technology, the bottom of groove typed insulation lid and the silica buried layer which is provided with optical waveguide are linked together, make the sidewall to be measured of optical waveguide, the closed fluid channel of a both ends open is formed between groove typed insulation lid and silica buried layer three, ionic liquid or polar liquid is passed into again in fluid channel, make aforesaid liquid wall flow whole to be measured along optical waveguide in fluid channel, the electric potential difference at optical waveguide two ends is measured finally by voltage-level detector, the nonlinear relationship between the electric potential difference at silicon optical waveguide silicon optical waveguide two ends and this silicon optical waveguide sidewall roughness is flow through according to fluid, the roughness of optical waveguide sidewall to be measured can be drawn, compared to measuring method and the device of traditional micro-nano device sidewall roughness, manufacture craft of the present invention and equipment are comparatively simple, do not need on original instrument and technique, carry out transformation and can realize carrying out roughness concentration to short sidewall.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention will be further described in detail;
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of a calibration sample of the present invention;
Fig. 3 is the atomic force image of the calibration sample in Fig. 2;
Fig. 4 is that the calibration sample in Fig. 2 is carried out the atomic force image after smooth surface process;
Fig. 5 is that the calibration sample in Fig. 2 is carried out the atomic force image after smooth surface process further;
Fig. 6 is a kind of structural representation of optical waveguide in the present invention;
Fig. 7 is the another kind of structural representation of optical waveguide in the present invention;
Fig. 8 is another structural representation of optical waveguide in the present invention;
Fig. 9 is the structural representation after the optical waveguide in Fig. 8 is cut;
In figure: 1 is silicon substrate, 2 is silica buried layer, and 3 is optical waveguide, and 4 is groove typed insulation lid, and 5 is fluid channel, and 6 is voltage-level detector, and 7 is silicon base, and 8 is silicon dioxide insulating layer, and 9 is silicon thin film, and 10 is grooved shell, and 11 is passage, and 12 is sample length section.
Embodiment
As shown in Figure 1, a kind of sidewall roughness pick-up unit for SOI optical waveguide, described SOI optical waveguide comprises the silicon substrate 1 which is provided with silica buried layer 2, described silica buried layer 2 is provided with optical waveguide 3, described optical waveguide 3 is stamped groove typed insulation lid 4, the sidewall to be measured of described optical waveguide 3 and form the closed fluid channel 5 of both ends open between described groove typed insulation lid 4 and described silica buried layer 2, there is in described fluid channel 5 liquid along optical waveguide 3 wall flow to be measured, the two ends of described optical waveguide 3 are also connected to voltage-level detector 6, wherein, described optical waveguide 3 can pass through reactive ion etching (RIE), inductively coupled plasma (ICP), the anisotropic dry etch process such as ion beam sputtering etching are processed into, described fluid channel 5 can be independent passage also can be the passage be communicated with.
For a sidewall roughness detection method for SOI optical waveguide, described SOI optical waveguide comprises the silicon substrate 1 which is provided with silica buried layer 2, and described silica buried layer 2 is provided with optical waveguide 3, and described detection method comprises the following steps:
Step S1.1: utilize insulating material, prepares the groove typed insulation lid 4 that Open Side Down;
Step S1.2: by bonding technology, covers groove typed insulation lid 4 in optical waveguide 3, makes the closed fluid channel 5 forming both ends open between the sidewall to be measured of optical waveguide 3 and groove typed insulation lid 4 and silica buried layer 2;
Step S1.3: pass into ionic liquid or polar liquid in fluid channel 5, makes liquid wall flow whole to be measured along optical waveguide 3 in fluid channel 5;
Step S1.4: measure the electric potential difference at optical waveguide 3 two ends, nonlinear relationship when flowing through silicon optical waveguide sidewall according to fluid between the electric potential difference at silicon optical waveguide two ends and silicon optical waveguide sidewall roughness, draws the roughness of the sidewall to be measured of optical waveguide 3.
Particularly, the ionic liquid in step S1.3 can be hydrochloric acid, potassium chloride or sodium chloride, and polar liquid can be ethanol or deionized water; In step step S1.1, the preparation technology of groove typed insulation lid 4 is method of molding, or is pressure sintering, or is LIGA technology, or is laser ablation technology, or is soft lithography; In addition, in step step S1.1, the insulating material preparing grooved insulating lid 4 is high molecular polymer, described high molecular polymer can be the thermoplastic polymers such as polyamide, polymethyl acyl methyl esters, polycarbonate, poly-third ethene, can be the curing type polymkeric substance such as dimethyl silicone polymer, epoxy resin, polyurethane, also can be acrylic acid, rubber, fluoroplastic equal solvent volatile-type polymkeric substance.
According to existing bibliographical information (Persson BNJ, Tartaglino U, Tosatti E, Ueba H. Electronic friction and liquid-ow-induced voltage in nanotubes. Phys Rev B. 2004.), when fluid flows through nonisulated solid phase material surface, the solid two-phase interface of stream also exists " electricity friction ", make, between the electric potential difference at nonisulated solid phase material two ends and this nonisulated solid phase material surfaceness, there is nonlinear relationship, particularly, when fluid contacts with semiconducting solid, fluid molecule can form class solid unimolecular layer in liquid-solid boundary, under fluid matasomatism, this unimolecular layer generation nanoscale stick-slip, and corresponding physisorption ion is by adsorbing and desorbing generation displacement, thus make semiconductor material inside produce electronics displacement, because " electricity friction " becomes nonlinear relationship with the roughness on nonisulated solid phase material surface, therefore solid phase material surfaceness can be assessed by measuring flow-induced electric potential difference (electric potential differences at nonisulated solid phase material two ends).
Fig. 2 is the structural representation of a calibration sample of the present invention, in figure: in silicon base 7, growth has layer of silicon dioxide insulation course 8, silicon dioxide insulating layer 8 has the sidewall to be measured that one deck silicon thin film 9(is equivalent to the optical waveguide 3 in the present invention), silicon thin film 9 is provided with grooved shell 10, grooved shell 10 is made up of insulating material, the closed channel 11 of a both ends open is formed between grooved shell 10 and silicon thin film 9, the maximum height Ry chosen between sample length section 12 Internal periphery summit line to profile valley line is Surface Roughness Evaluation parameter, as shown in Figure 3, the roughness Ry of sample length section 12 is 19.12nm, the solution speed passing into 0.6M in passage 11 is the KCl solution of 100mm/s, now measure the electric potential difference at sample length section 12 two ends, for 23.4mv, after calibration sample in Fig. 2 is carried out smooth surface process, as shown in Figure 4, the roughness Ry of sample length section 12 is 10.05nm, and the solution speed passing into 0.6M is after the KCl solution of 100mm/s, and measuring the electric potential difference obtaining sample length section 12 two ends is 9.6mv, after calibration sample in Fig. 2 is carried out smooth surface process further, as shown in Figure 5, the roughness Ry of sample length section 12 is 0.545nm, and the solution speed passing into 0.6M is after the KCl solution of 100mm/s, and measuring the electric potential difference obtaining sample length section 12 two ends is 0.6mv.
The present embodiment is the design done for typical SOI fiber waveguide device, the present invention can be applicable to identical device or similar field, optical waveguide 3 can be the various forms of Fig. 6 ~ Fig. 8, if optical waveguide 3 is the ring cavity structure shown in Fig. 8, when carrying out inner wall roughness and measuring, need to use laser lamp technique to cut in advance, form the structure of Fig. 9, then insulated enclosure is carried out to the silicon substrate of naked leakage.
In sum, the present invention neither needs to destroy sample structure, does not also need to add extra technological process, and whole technique, equipment are comparatively simple, can measure the roughness of short sidewall easily and accurately, has outstanding substantive distinguishing features with significant progressive; By reference to the accompanying drawings embodiments of the invention are explained in detail above, but the present invention is not limited to above-described embodiment, in the ken that those of ordinary skill in the art possess, various change can also be made under the prerequisite not departing from present inventive concept.
Claims (10)
1. the sidewall roughness detection method for SOI optical waveguide, described SOI optical waveguide comprises the silicon substrate (1) which is provided with silica buried layer (2), described silica buried layer (2) is provided with optical waveguide (3), it is characterized in that: described detection method comprises the following steps:
Step S1.1: utilize insulating material, prepares the groove typed insulation lid (4) that Open Side Down;
Step S1.2: by bonding technology, covers groove typed insulation lid (4) in optical waveguide (3), makes the sidewall to be measured of optical waveguide (3) and forms the closed fluid channel (5) of both ends open between groove typed insulation lid (4) and silica buried layer (2);
Step S1.3: pass into ionic liquid or polar liquid in fluid channel (5), makes liquid wall flow whole to be measured along optical waveguide (3) in fluid channel (5);
Step S1.4: measure the electric potential difference at optical waveguide (3) two ends, nonlinear relationship when flowing through silicon optical waveguide sidewall according to fluid between the electric potential difference at silicon optical waveguide two ends and silicon optical waveguide sidewall roughness, draws the roughness of the sidewall to be measured of optical waveguide (3).
2. a kind of sidewall roughness detection method for SOI optical waveguide according to claim 1, is characterized in that: the polar liquid in step S1.3 is ethanol, or is deionized water.
3. a kind of sidewall roughness detection method for SOI optical waveguide according to claim 1, is characterized in that: in step step S1.1, and the preparation technology of groove typed insulation lid (4) is method of molding, or be pressure sintering, or be LIGA technology, or be laser ablation technology, or be soft lithography.
4. a kind of sidewall roughness detection method for SOI optical waveguide according to claim 1, it is characterized in that: in step step S1.1, the insulating material preparing grooved insulating lid (4) is high molecular polymer, described high molecular polymer is thermoplastic polymer, or be curing type polymkeric substance, or be solvent volatile-type polymkeric substance.
5. a kind of sidewall roughness detection method for SOI optical waveguide according to claim 4, is characterized in that: described thermoplastic polymer is polyamide, or is polymethyl acyl methyl esters, or be polycarbonate, or is poly-third ethene.
6. a kind of sidewall roughness detection method for SOI optical waveguide according to claim 4, is characterized in that: described curing type polymkeric substance is dimethyl silicone polymer, or is epoxy resin, or be polyurethane.
7. a kind of sidewall roughness detection method for SOI optical waveguide according to claim 4, is characterized in that: described solvent volatile-type polymkeric substance is acrylic acid, or is rubber, or is fluoroplastic.
8. a kind of sidewall roughness detection method for SOI optical waveguide according to claim 1, is characterized in that: the ionic liquid in step S1.3 is hydrochloric acid, or is potassium chloride, or be sodium chloride.
9. the sidewall roughness pick-up unit for SOI optical waveguide, described SOI optical waveguide comprises the silicon substrate (1) which is provided with silica buried layer (2), described silica buried layer (2) is provided with optical waveguide (3), it is characterized in that: described optical waveguide (3) is stamped groove typed insulation lid (4), the sidewall to be measured of described optical waveguide (3) and form the closed fluid channel (5) of both ends open between described groove typed insulation lid (4) and described silica buried layer (2), there is in described fluid channel (5) liquid along optical waveguide (3) wall flow to be measured, the two ends of described optical waveguide (3) are also connected to voltage-level detector (6).
10. a kind of sidewall roughness pick-up unit for SOI optical waveguide according to claim 9, is characterized in that: the material of preparing of described groove typed insulation lid (4) is thermoplastic polymer, or is curing type polymkeric substance, or is solvent volatile-type polymkeric substance.
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Inventor after: Ji Jianlong Inventor after: Duan Qianqian Inventor after: Guan Aoqun Inventor after: Sang Shengbo Inventor after: Qiao Chang Inventor after: Zhang Wendong Inventor before: Ji Jianlong Inventor before: Guan Aoqun Inventor before: Duan Qianqian Inventor before: Sang Shengbo Inventor before: Qiao Chang Inventor before: Zhang Wendong |
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