CN104534977B - Side wall roughness detecting method and device for SOI optical waveguide - Google Patents
Side wall roughness detecting method and device for SOI optical waveguide Download PDFInfo
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- CN104534977B CN104534977B CN201410794625.XA CN201410794625A CN104534977B CN 104534977 B CN104534977 B CN 104534977B CN 201410794625 A CN201410794625 A CN 201410794625A CN 104534977 B CN104534977 B CN 104534977B
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Abstract
The invention relates to a side wall roughness detecting method and device for an SOI optical waveguide. The technology and equipment are simple. By the adoption of the method and device, a low side wall can be measured. According to the technical scheme, a groove type insulating cover which is open downwards is manufactured with an insulating material and covers the optical waveguide through the bonding technology, and then a closed micro-channel with two ends open is formed between the side wall, to be detected, of the optical waveguide and the groove type insulating cover and a silicon dioxide buried layer; ionic liquid or polar liquid is introduced into the micro-channel so that the liquid can flow along the whole side wall, to be detected, of the optical waveguide in the micro-channel; the potential difference between the two ends of the optical waveguide is measured, and the roughness of the side wall, to be detected, of the optical waveguide is obtained according to the non-linear relationship between the potential difference between the two ends of the silicon optical waveguide when the liquid flows through the side wall of the silicon optical waveguide and the roughness of the side wall of the silicon optical waveguide. The method and device are suitable for measurement of MEMS devices.
Description
Technical field
The invention belongs to the sidewall roughness e measurement technology of micro-nano device, and in particular to a kind of side for SOI fiber waveguides
Wall roughness detecting method and device.
Background technology
For the roughness concentration of micro-nano device side wall, existing technology includes both at home and abroad：By electron microscope to device
Part structure is observed and is carried out roughness estimation using electromicroscopic photograph, or is imaged by afm scan.
Although the method estimated based on electron microscope is simple, measure not accurate enough；Common AFM
Although test zone can be amplified thousands of times, for the calculating of sidewall roughness, can only be by the structure of destruction device
To measure；Particularly with short micro-nano structure side wall, motion and the stress of probe are affected by bottom surface, it is impossible to realized
Accurately, fast imaging.
For these problems, some solutions are occurred in that, wherein：Patent（201410310642.1）Describe a kind of base
In the method for testing of AFM, the method has transformed the probe carriage of AFM so that researcher can basis
Sidewall angles demand, arranges the probe anglec of rotation, on the premise of sample is not destroyed, realizes to micro-nano structure large angle side wall
Surface Characterization；Patent（201410364545.0）The method for then proposing a kind of utilization capacitance variations detection etch side wall, the party
Although method need not destroy sample structure, however it is necessary that adding extra technological process before functional area production process.
Therefore, above-mentioned technology is transformed on original instrument or technique, and not only technique, equipment are more complicated, and
For short side wall still cannot realize roughness concentration.
The content of the invention
The present invention overcomes the shortcomings of that prior art is present, and technical problem to be solved is：A kind of technique, equipment letter are provided
It is single, the roughness detecting method and device for SOI fiber waveguides that short side wall can be measured.
In order to solve above-mentioned technical problem, the technical solution used in the present invention is：A kind of side wall for SOI fiber waveguides is thick
Rugosity detection method, described SOI fiber waveguides include which is provided with the silicon substrate of silica buried layer, and the silica is covered
Buried regions is provided with fiber waveguide, and the detection method is comprised the following steps：Step S1.1：Using insulating materials, Open Side Down for preparation
Groove typed insulation lid；Step S1.2：By bonding technology, groove typed insulation lid is covered in fiber waveguide so that fiber waveguide it is to be measured
The closing fluid channel of both ends open is formed between side wall and groove typed insulation lid and silica buried layer；Step S1.3：In miniflow
Be passed through ionic liquid or polar liquid in road so that liquid in the fluid channel along fiber waveguide wall flow whole to be measured；
Step S1.4：The electrical potential difference at measurement fiber waveguide two ends, the potential at silicon optical waveguide two ends when flowing through silicon optical waveguide side wall according to fluid
Non-linear relation between difference and silicon optical waveguide sidewall roughness, draws the roughness of the side wall to be measured of fiber waveguide.
Polar liquid in step S1.3 is ethanol, or is deionized water；In step S1.1, the preparation work of groove typed insulation lid
Skill is method of molding, or is pressure sintering, or is LIGA technologies, or is laser ablation technology, or is soft lithography；In step S1.1,
The insulating materials for preparing grooved insulating lid is high molecular polymer, and described high molecular polymer is thermoplastic polymer, or is
Curing type polymer, or be solvent volatile-type polymer；The thermoplastic polymer is polyamide, or is polymethyl acyl first
Ester, or be Merlon, or be polystyrene；The curing type polymer is dimethyl silicone polymer, or is epoxy resin, or
For polyurethane；The solvent volatile-type polymer is acrylic acid, or is rubber, or is fluoroplastics；Ionic liquid in step S1.3
Body is hydrochloric acid, or is potassium chloride, or is sodium chloride.
A kind of sidewall roughness detection means for SOI fiber waveguides, described SOI fiber waveguides include which is provided with dioxy
The silicon substrate of SiClx buried layer, the silica buried layer are provided with fiber waveguide, are stamped groove typed insulation lid in the fiber waveguide,
The envelope of both ends open is formed between the side wall to be measured of the fiber waveguide and the groove typed insulation lid and the silica buried layer
Close in fluid channel, the fluid channel with the liquid along fiber waveguide wall flow to be measured, the two ends of the fiber waveguide are simultaneously connected to
Voltage detector；The material for preparing of the groove typed insulation lid is thermoplastic polymer, or is curing type polymer, or is waved for solvent
Hair style polymer.
The present invention is had the advantages that compared with prior art：
In the present invention, when needing to measure the sidewall roughness of SOI fiber waveguides, it is only necessary in the outer enclosure of whole fiber waveguide
Insulating materials forms groove typed insulation lid, then covers groove typed insulation lid in fiber waveguide, by bonding technology by groove typed insulation lid
The silica buried layer of the provided fiber waveguide in bottom link together so that the side wall to be measured of fiber waveguide, grooved are exhausted
The closing fluid channel of a both ends open is formed between edge lid and silica buried layer three, then is passed through ion in fluid channel
Liquid or polar liquid so that aforesaid liquid in the fluid channel along fiber waveguide wall flow whole to be measured, finally by
Voltage detector measures the electrical potential difference at fiber waveguide two ends, according to fluid flow through the electrical potential difference at silicon optical waveguide silicon optical waveguide two ends with
Non-linear relation between the silicon optical waveguide sidewall roughness, you can draw the roughness of fiber waveguide side wall to be measured；Compared to biography
The measuring method of the micro-nano device sidewall roughness of system and device, manufacture craft of the present invention and equipment it is simpler, it is not necessary in original
Transformed on some instruments and technique and roughness concentration is carried out to short side wall.
Description of the drawings
The present invention will be further described in detail below in conjunction with the accompanying drawings；
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the structural representation of a calibration sample of the present invention；
Atomic force images of the Fig. 3 for the calibration sample in Fig. 2；
Fig. 4 is that the calibration sample in Fig. 2 is carried out the atomic force image after the smooth treatment of surface；
Fig. 5 is that the calibration sample in Fig. 2 is further carried out the atomic force image after the smooth treatment of surface；
Fig. 6 is a kind of structural representation of fiber waveguide in the present invention；
Fig. 7 is another kind of structural representation of fiber waveguide in the present invention；
Fig. 8 is the yet another construction schematic diagram of fiber waveguide in the present invention；
Structural representations of the Fig. 9 for the fiber waveguide in Fig. 8 after cut；
In figure：1 is silicon substrate, and 2 is silica buried layer, and 3 is fiber waveguide, and 4 is groove typed insulation lid, and 5 is fluid channel, 6
For voltage detector, 7 is silicon base, and 8 is silicon dioxide insulating layer, and 9 is silicon thin film, and 10 is grooved shell, and 11 is passage, and 12 are
Sample length section.
Specific embodiment
As shown in figure 1, a kind of sidewall roughness detection means for SOI fiber waveguides, described SOI fiber waveguides include which
The silicon substrate 1 of silica buried layer 2 is provided with, the silica buried layer 2 is provided with fiber waveguide 3, in the fiber waveguide 3
Be stamped groove typed insulation lid 4, the side wall to be measured of the fiber waveguide 3 and the groove typed insulation lid 4 and the silica buried layer 2 it
Between form the closing fluid channel 5 of both ends open, with the liquid along 3 wall flow to be measured of fiber waveguide, institute in the fluid channel 5
State the two ends of fiber waveguide 3 and be connected to voltage detector 6, wherein, described fiber waveguide 3 can pass through reactive ion etching（RIE）、
Inductively coupled plasma（ICP）, ion beam sputtering etching etc. anisotropic dry etch process be processed into, described miniflow
It can also be the passage for connecting that road 5 can be single passage.
A kind of sidewall roughness detection method for SOI fiber waveguides, described SOI fiber waveguides include which is provided with dioxy
The silicon substrate 1 of SiClx buried layer 2, the silica buried layer 2 are provided with fiber waveguide 3, and the detection method includes following step
Suddenly：
Step S1.1：Using insulating materials, the groove typed insulation lid 4 that Open Side Down is prepared；
Step S1.2：By bonding technology, groove typed insulation lid 4 is covered in fiber waveguide 3 so that the side to be measured of fiber waveguide 3
The closing fluid channel 5 of both ends open is formed between wall and groove typed insulation lid 4 and silica buried layer 2；
Step S1.3：Be passed through ionic liquid or polar liquid in fluid channel 5 so that liquid in the fluid channel 5 along
The wall flow whole to be measured of fiber waveguide 3；
Step S1.4：The electrical potential difference at 3 two ends of measurement fiber waveguide, silicon optical waveguide two when flowing through silicon optical waveguide side wall according to fluid
Non-linear relation between the electrical potential difference at end and silicon optical waveguide sidewall roughness, draws the roughness of the side wall to be measured of fiber waveguide 3.
Specifically, the ionic liquid in step S1.3 can be hydrochloric acid, potassium chloride or sodium chloride, and polar liquid can be ethanol
Or deionized water；In step S1.1, the preparation technology of groove typed insulation lid 4 is method of molding, or is pressure sintering, or is LIGA skills
Art, or be laser ablation technology, or be soft lithography；Additionally, in step S1.1, the insulating materials for preparing grooved insulating lid 4 is
High molecular polymer, described high molecular polymer can be polyamide, polymethyl acyl methyl esters, Merlon, polystyrene
Deng thermoplastic polymer, can be the curing type polymer such as dimethyl silicone polymer, epoxy resin, polyurethane, alternatively acrylic acid,
Rubber, fluoroplastics equal solvent volatile-type polymer.
According to existing document report（Persson BNJ, Tartaglino U, Tosatti E, Ueba H.
Electronic friction and liquid- ow-induced voltage in nanotubes. Phys Rev B.
2004.）, when fluid flows through nonisulated solid phase material surface, the solid two-phase interface of stream has " electricity friction " so that nonisulated solid phase
There is between the electrical potential difference at material two ends and the nonisulated solid phase material surface roughness non-linear relation, specifically, work as fluid
When contacting with semiconducting solid, fluid molecule can form class solid monolayer, under fluid matasomatism, this single point in liquid-solid boundary
There is nanoscale stick-slip in sublayer, and corresponding physical absorption ion is by absorption and desorbs generation displacement, so that
Electronics displacement is produced inside semi-conducting material, as the roughness on " electricity friction " and nonisulated solid phase material surface is into non-thread
Sexual intercourse, therefore can be poor by measuring fluid induced electric potential（The electrical potential difference at nonisulated solid phase material two ends）To assess solid phase material
Surface roughness.
Fig. 2 is the structural representation of a calibration sample of the present invention, in figure：In silicon base 7, growth has one layer of dioxy
SiClx insulating barrier 8, has one layer of silicon thin film 9 on silicon dioxide insulating layer 8（Equivalent to the side to be measured of the fiber waveguide 3 in the present invention
Wall）, be provided with grooved shell 10 on silicon thin film 9, grooved shell 10 is made up of insulating materials, grooved shell 10 and silicon thin film 9 it
Between form the closed channel 11 of a both ends open, choose 12 Internal periphery summit line of sample length section between profile valley line
Maximum height Ry is Surface Roughness Evaluation parameter, as shown in figure 3, roughness Ry of sample length section 12 is 19.12nm, logical
The KCl solution of the solution speed for 100mm/s of 0.6M is passed through in road 11, now measures the electrical potential difference at 12 two ends of sample length section,
For 23.4mv；Calibration sample in Fig. 2 is carried out after the smooth treatment of surface, as shown in figure 4, roughness Ry of sample length section 12
For 10.05nm, after being passed through the solution speed of 0.6M for the KCl solution of 100mm/s, measurement obtains the electricity at 12 two ends of sample length section
Potential difference is 9.6mv；Calibration sample in Fig. 2 is further carried out after the smooth treatment of surface, as shown in figure 5, sample length section 12
Roughness Ry be 0.545nm, after being passed through the solution speed of 0.6M for the KCl solution of 100mm/s, measurement obtains sample length section
The electrical potential difference at 12 two ends is 0.6mv.
The present embodiment is the design done for typical SOI fiber waveguide devices, present invention can apply to identical device or
Similar field, fiber waveguide 3 can be the various forms of Fig. 6 ~ Fig. 8, if fiber waveguide 3 is the ring cavity structure shown in Fig. 8, when carrying out
When inner wall roughness is measured, need to be cut using laser lamp technique in advance, form the structure of Fig. 9, then to exposed silicon substrate
Carry out insulated enclosure.
In sum, the present invention need not both destroy sample structure, it is not required that the extra technological process of addition, whole work
Skill, equipment are simpler, can easily and accurately measure the roughness of short side wall, with prominent substantive distinguishing features and significantly
Progress；Embodiments of the invention are explained in detail above in conjunction with accompanying drawing, but the present invention are not limited to above-described embodiment,
In the ken that those of ordinary skill in the art possess, can be each to make on the premise of without departing from present inventive concept
Plant change.
Claims (10)
1. a kind of sidewall roughness detection method for SOI fiber waveguides, described SOI fiber waveguides include which is provided with titanium dioxide
Silicon buried layer（2）Silicon substrate（1）, the silica buried layer（2）It is provided with fiber waveguide（3）, it is characterised in that：The inspection
Survey method is comprised the following steps：
Step S1.1：Using insulating materials, the groove typed insulation lid that Open Side Down is prepared（4）；
Step S1.2：By bonding technology, by groove typed insulation lid（4）Cover in fiber waveguide（3）On so that fiber waveguide（3）It is to be measured
Side wall and groove typed insulation lid（4）And silica buried layer（2）Between formed both ends open closing fluid channel（5）；
Step S1.3：In fluid channel（5）In be passed through ionic liquid or polar liquid so that liquid is in fluid channel（5）It is interior along
Fiber waveguide（3）Wall flow whole to be measured；
Step S1.4：Measurement fiber waveguide（3）The electrical potential difference at two ends, silicon optical waveguide two ends when flowing through silicon optical waveguide side wall according to fluid
Electrical potential difference and silicon optical waveguide sidewall roughness between non-linear relation, draw fiber waveguide（3）Side wall to be measured roughness.
2. a kind of sidewall roughness detection method for SOI fiber waveguides according to claim 1, it is characterised in that：Step
Polar liquid in rapid S1.3 is ethanol, or is deionized water.
3. a kind of sidewall roughness detection method for SOI fiber waveguides according to claim 1, it is characterised in that：Step
In rapid S1.1, groove typed insulation lid（4）Preparation technology be method of molding, or be pressure sintering, or be LIGA technologies, or be laser ablation
Technology, or be soft lithography.
4. a kind of sidewall roughness detection method for SOI fiber waveguides according to claim 1, it is characterised in that：Step
In rapid S1.1, grooved insulating lid is prepared（4）Insulating materials be high molecular polymer, described high molecular polymer is thermoplasticity
Polymer, or be curing type polymer, or be solvent volatile-type polymer.
5. a kind of sidewall roughness detection method for SOI fiber waveguides according to claim 4, it is characterised in that：Institute
It is polyamide to state thermoplastic polymer, or is polymethyl acyl methyl esters, or is Merlon, or is polystyrene.
6. a kind of sidewall roughness detection method for SOI fiber waveguides according to claim 4, it is characterised in that：Institute
It is dimethyl silicone polymer to state curing type polymer, or is epoxy resin, or is polyurethane.
7. a kind of sidewall roughness detection method for SOI fiber waveguides according to claim 4, it is characterised in that：Institute
It is acrylic acid to state solvent volatile-type polymer, or is rubber, or is fluoroplastics.
8. a kind of sidewall roughness detection method for SOI fiber waveguides according to claim 1, it is characterised in that：Step
Ionic liquid in rapid S1.3 is hydrochloric acid, or is potassium chloride, or is sodium chloride.
9. a kind of sidewall roughness detection means for SOI fiber waveguides, described SOI fiber waveguides include which is provided with titanium dioxide
Silicon buried layer（2）Silicon substrate（1）, the silica buried layer（2）It is provided with fiber waveguide（3）, it is characterised in that：The light
Waveguide（3）On be stamped groove typed insulation lid（4）, the fiber waveguide（3）Side wall to be measured and the groove typed insulation lid（4）With described two
Silica buried layer（2）Between formed both ends open closing fluid channel（5）, the fluid channel（5）It is interior with along fiber waveguide
（3）The liquid of wall flow to be measured, the fiber waveguide（3）Two ends and be connected to voltage detector（6）.
10. a kind of sidewall roughness detection means for SOI fiber waveguides according to claim 9, it is characterised in that：Institute
State groove typed insulation lid（4）Prepare material for thermoplastic polymer, or be curing type polymer, or for the polymerization of solvent volatile-type
Thing.
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