CN104532190A - Preparation method of Zr-Cu metal glass film - Google Patents

Preparation method of Zr-Cu metal glass film Download PDF

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CN104532190A
CN104532190A CN201410797996.3A CN201410797996A CN104532190A CN 104532190 A CN104532190 A CN 104532190A CN 201410797996 A CN201410797996 A CN 201410797996A CN 104532190 A CN104532190 A CN 104532190A
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glass film
metallic glass
preparation
substrate
evaporation
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CN104532190B (en
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张博
张倩
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Hefei University of Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Glass Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

The invention discloses a novel preparation method of a Zr-Cu metal glass film. The method is characterized by comprising the following steps: compounding a coating system by virtue of electron beam evaporation and resistance evaporation; respectively putting Zr and Cu into a copper crucible for electron beam evaporation and a tungsten boat for resistance evaporation as targets; putting a substrate on a substrate tray; vacuumizing, adjusting the beam value of an electron beam and the resistance evaporation current; and controlling the deposition time, so as to prepare the Zr-Cu metal glass film samples with different components and thicknesses. According to the method disclosed by the invention, a cooling device does not need to be added; the preparation process is simplified; and the production cost is reduced.

Description

A kind of preparation method of Zr-Cu metallic glass film
Technical field
The present invention relates to a kind of preparation method of Zr-Cu metallic glass film, belong to metallic glass film applications.
Background technology
Metallic glass, also known as non-crystaline amorphous metal, atomic structure lack of alignment, owing to having a lot of excellent performance, as high strength, high rigidity, large elastic strain limit, solidity to corrosion, wear resistance, superplasticity (in supercooling liquid phase region) and good soft magnetism etc., therefore regarded as a kind of type material with very large application potential by many researchers.
Amorphous alloy film, as a kind of low-dimensional materials, not only has the excellent characteristics of block amorphous alloy, and rate of cooling (film: 10 10~ 10 12k/s, block: 10 3~ 10 8k/s) larger, glass forming ability scope is wider, and the bend ductility of bulk amorphous materials and 316 stainless resistance to fatigues are played a role in improving, at micro-/naiio-electro-meclianical systems (MEMS/NEMS) and biomedical sector, also there is very large potential using value.
At present, prepare metallic glass film and generally adopt sputtering method, its film prepared and substrate bonding force more firm; And method of evaporation also has, and film purity is higher, sedimentation velocity fast, simple operation and other advantages, Zr-Cu alloy is a kind of typical amorphous alloy system, and there is larger glass forming ability, excellent mechanical property and good thermostability, the preparation method of current Zr-Cu metallic glass film mainly contains magnetron sputtering method, solid state amorphization reaction method and twin-cathode ray beam coevaporation method.Adopt magnetron sputtering method owing to needing argon ion bombardment target, the sample of preparation easily containing impurity, and need prepare target, and operating process is complicated, and cost is higher; Adopt solid phase decrystallized reaction method need explore the Appropriate of reaction times, temperature of reaction and monolayer film thickness, process is loaded down with trivial details, and preparation time is longer.When adopting twin-cathode ray beam method of evaporation, substrate can, because of the thermal-radiating impact of two electron beam evaporation sources, cause temperature higher, general employing substrate refrigerating unit.
Summary of the invention
The present invention is the problem for avoiding existing for above-mentioned prior art, provides a kind of preparation method of Zr-Cu metallic glass film, to obtaining wide composition amorphous Zr-Cu metallic glass film under underlay substrate is without refrigerating unit condition.
Technical solution problem of the present invention, adopts following technical scheme:
The preparation method of Zr-Cu metallic glass film of the present invention, its feature is: make deposited by electron beam evaporation and thermal resistance evaporation composite film coating system, Zr and Cu is placed in electron beam evaporation copper crucible and thermal resistance evaporation tungsten boat as target respectively, substrate is held in place on the substrate pallet above copper crucible, is evacuated to 1 × 10 -4below Pa, regulate Electron Beam flow valuve at 150 ~ 190mA, regulating resistance evaporation current is 160 ~ 185A, Zr and Cu is evaporated simultaneously and is deposited on substrate, and control depositing time is 1 ~ 4h, must deposit the substrate of Zr-Cu metallic glass film; Gained Zr-Cu metallic glass film is amorphous structure.
Preparation method of the present invention, its feature is also: by the Zr-Cu metallic glass film sample adjusting Electron Beam flow valuve and adjusting resistance evaporation current can obtain heterogeneity within the scope of 160 ~ 185A within the scope of 150 ~ 190mA; The Zr-Cu metallic glass film sample of different thickness can be obtained by adjusting depositing time within the scope of 1 ~ 4h.Gained Zr-Cu metallic glass film is Zr xcu 100-xmetallic glass film, wherein x is the atomic percent of Zr element in film, x=30 ~ 85.
Purity >=the 99.9wt% of the purity >=99.9wt% of starting material Zr, starting material Cu.
Beneficial effect of the present invention is embodied in:
The present invention adopts method of evaporation to prepare non-crystalline state Zr-Cu metallic glass film, metallic Z r, Cu are respectively by electron beam evaporation source and thermal resistance evaporation source evaporation, underlay substrate is without any refrigerating unit, simplify preparation technology, reduce cost, by regulating each evaporation source electric current, the Zr of heterogeneity can be obtained xcu 100-xnoncrystalline membrane sample, wherein x=30 ~ 85, x is the atomic percent of Zr element, for wherein a certain components Sample, can obtain the film of different thickness by the evaporation time, as Zr 62cu 38metallic glass film, by regulating the evaporation time to be respectively 1h, 2h, 3h and 4h, can obtain the film sample that thickness should be 131nm, 246nm, 361nm and 480nm mutually, and be non-crystalline state, the present invention contributes to metallic glass film and applies widely.
Accompanying drawing explanation
Fig. 1 is heterogeneity Zr xcu 100-xthe XRD figure of (x=20 ~ 85, x is the atomic percent of Zr element) film;
Fig. 2 is sample Zr 62cu 38the XRD figure of different depositing time (1h, 2h, 3h, 4h);
Fig. 3 is sample Zr 62cu 38the surface sweeping sectional drawing of different depositing time (1h, 2h, 3h, 4h);
Fig. 4 is sample Zr 62cu 38film thickness with the variation relation of depositing time (1h, 2h, 3h, 4h);
Fig. 5 is sample Zr 62cu 38the transmission electron microscope TEM of different depositing time (1h, 2h, 3h, 4h) schemes.
Embodiment
Electron beam evaporation used in the present invention and thermal resistance evaporation composite film coating system are the DZS-500 type electron beam/thermal resistance evaporation coating system of Shenyang Scientific Instrument Research & Mfg. Center Co., Ltd., C.A.S.
The macrostructure characteristic of gained Zr-Cu metallic glass film of the present invention adopts X-ray diffraction method (XRD) to detect, and equipment used model is: X ' Pert Pro MPD, PANalytical, Holland.
The microcosmos structure characteristic of gained Zr-Cu metallic glass film of the present invention adopts Flied emission transmission electron microscope (FE-TEM) to detect, and equipment used model is: JEM-2100F, NEC, Japan.
The thickness of gained Zr-Cu metallic glass film of the present invention and composition adopt field emission scanning electron microscope (FE-SEM) and subsidiary energy spectrometer (EDS) to detect, and equipment used model is: SU8020, FDAC, Japan.
Embodiment 1:Zr 20cu 80the preparation of metallic glass film
Step 1: surface scale is removed in starting material Zr (99.9wt%) and Cu (99.9wt%) polishing, and successively after acetone, each 10min of alcohol ultrasonic cleaning, be placed in copper crucible and tungsten boat respectively, by substrate sheet glass and silicon chip successively after acetone, alcohol, each 10min of deionized water ultrasonic cleaning, dry up and be placed on substrate pallet;
Step 2: the intake valve closing electron beam evaporation and thermal resistance evaporation composite film coating system, opens water coolant, is placed in by vapor pipe outside window, open coating system general supply, start tool pumping source, opens side and takes out valve, open vacuumometer, when vacuum tightness is less than 10Pa, close side and take out valve, open magnetic valve, open slide valve, open molecular pump power source, when vacuum tightness is lower than 1 × 10 -4during Pa, unlocking electronic rifle power supply, by scanning key, shooting heater supply, be adjusted to 0.3A, preheating 5 minutes, line controls to be adjusted to manually, opens high pressure 6KV, check on manual instrument, whether line is minimum, press high pressure key, stablize 2 minutes, strengthen line clockwise to 25mA, facula position is regulated to be located in crucible, slow increase line, to 150mA, opens thermal resistance evaporation power supply, slowly increases electric current to 185A, open substrate turn switch, make it rotate with 20r/min, open baffle plate, deposit after 2 hours and close;
Step 3: by energy spectrometer, its composition is detected, the composition average out to Zr of known gained sample to sample obtained by above-mentioned steps 2 20cu 80;
Step 4: by XRD, its structure is detected to sample obtained by above-mentioned steps 2, as shown in Figure 1, occur obvious crystal peak, wherein first steamed bun peak is glass substrate Interference Peaks, second peak is the obvious sharpening in sample peak (40 ° ~ 45 °), and the sample crystallization of preparation is described.
Embodiment 2:Zr 30cu 70the preparation of metallic glass film
Step 1: surface scale is removed in starting material Zr (99.9wt%) and Cu (99.9wt%) polishing, and successively after acetone, each 10min of alcohol ultrasonic cleaning, be placed in copper crucible and tungsten boat respectively, by substrate sheet glass and silicon chip successively after acetone, alcohol, each 10min of deionized water ultrasonic cleaning, dry up and be placed on substrate pallet;
Step 2: the intake valve closing electron beam evaporation and thermal resistance evaporation composite film coating system, opens water coolant, is placed in by vapor pipe outside window, open filming equipment general supply, start tool pumping source, opens side and takes out valve, open vacuumometer, when vacuum tightness is less than 10Pa, close side and take out valve, open magnetic valve, open slide valve, open molecular pump power source, when vacuum tightness is lower than 1 × 10 -4during Pa, unlocking electronic rifle power supply, by scanning key, shooting heater supply, be adjusted to 0.3A, preheating 5 minutes, line controls to be adjusted to manually, opens high pressure 6KV, check on manual instrument, whether line is minimum, press high pressure key, stablize 2 minutes, strengthen line clockwise to 25mA, facula position is regulated to be located in crucible, slow increase line, to 150mA, opens thermal resistance evaporation power supply, slowly increases electric current to 175A, open substrate turn switch, make it rotate with 20r/min, open baffle plate, deposit after 2 hours and close;
Step 3: by energy spectrometer, its composition is detected, the composition average out to Zr of known gained sample to sample obtained by above-mentioned steps 2 30cu 70;
Step 4: by XRD, its structure is detected to sample obtained by above-mentioned steps 2, as shown in Figure 1, do not occur obvious crystal peak, wherein first steamed bun peak is glass substrate Interference Peaks, second steamed bun peak is sample peak (40 ° ~ 45 °), and the sample amorphous structure of preparation is described.
Embodiment 3:Zr 55cu 45the preparation of metallic glass film
Step 1: surface scale is removed in starting material Zr (99.9wt%) and Cu (99.9wt%) polishing, and successively after acetone, each 10min of alcohol ultrasonic cleaning, be placed in copper crucible and tungsten boat respectively, by substrate sheet glass and silicon chip successively after acetone, alcohol, each 10min of deionized water ultrasonic cleaning, dry up and be placed on substrate pallet;
Step 2: close intake valve, open water coolant, vapor pipe is placed in outside window, open filming equipment general supply, start tool pumping source, open side and take out valve, open vacuumometer, when vacuum tightness is less than 10Pa, close side and take out valve, open magnetic valve, open slide valve, open molecular pump power source, when vacuum tightness is lower than 1 × 10 -4during Pa, unlocking electronic rifle power supply, by scanning key, shooting heater supply, be adjusted to 0.3A, preheating 5 minutes, line controls to be adjusted to manually, opens high pressure 6KV, check on manual instrument, whether line is minimum, press high pressure key, stablize 2 minutes, strengthen line clockwise to 25mA, facula position is regulated to be located in crucible, slow increase line, to 160mA, opens thermal resistance evaporation power supply, slowly increases electric current to 175A, open substrate turn switch, make it rotate with 20r/min, open baffle plate, deposit after 2 hours and close.
Step 3: by energy spectrometer, its composition is detected, the composition average out to Zr of known gained sample to sample obtained by above-mentioned steps 2 55cu 45;
Step 4: by XRD, its structure is detected to sample obtained by above-mentioned steps 2, as shown in Figure 1, do not occur obvious crystal peak, wherein first steamed bun peak is glass substrate Interference Peaks, second steamed bun peak is sample peak (30 ° ~ 50 °), and the sample amorphous structure of preparation is described.
Embodiment 4:Zr 67cu 33the preparation of metallic glass film
Step 1: surface scale is removed in starting material Zr (99.9wt%) and Cu (99.9wt%) polishing, and successively after acetone, each 10min of alcohol ultrasonic cleaning, be placed in copper crucible and tungsten boat respectively, by substrate sheet glass and silicon chip successively after acetone, alcohol, each 10min of deionized water ultrasonic cleaning, dry up and be placed on substrate pallet;
Step 2: close intake valve, open water coolant, vapor pipe is placed in outside window, open filming equipment general supply, start tool pumping source, open side and take out valve, open vacuumometer, when vacuum tightness is less than 10Pa, close side and take out valve, open magnetic valve, open slide valve, open molecular pump power source, when vacuum tightness is lower than 1 × 10 -4during Pa, unlocking electronic rifle power supply, by scanning key, shooting heater supply, be adjusted to 0.3A, preheating 5 minutes, line controls to be adjusted to manually, opens high pressure 6KV, check on manual instrument, whether line is minimum, press high pressure key, stablize 2 minutes, strengthen line clockwise to 25mA, facula position is regulated to be located in crucible, slow increase line, to 160mA, opens thermal resistance evaporation power supply, slowly increases electric current to 160A, open substrate turn switch, make it rotate with 20r/min, open baffle plate, deposit after 2 hours and close;
Step 3: by energy spectrometer, its composition is detected, the composition average out to Zr of known gained sample to sample obtained by above-mentioned steps 2 67cu 33;
Step 4: by XRD, its structure is detected to sample obtained by above-mentioned steps 2, as shown in Figure 1, do not occur obvious crystal peak, wherein first steamed bun peak is glass substrate Interference Peaks, second steamed bun peak is sample peak (30 ° ~ 45 °), and the sample amorphous structure of preparation is described.
Embodiment 5:Zr 85cu 15the preparation of metallic glass film
Step 1: surface scale is removed in starting material Zr (99.9wt%) and Cu (99.9wt%) polishing, and successively after acetone, each 10min of alcohol ultrasonic cleaning, be placed in copper crucible and tungsten boat respectively, by substrate sheet glass and silicon chip successively after acetone, alcohol, each 10min of deionized water ultrasonic cleaning, dry up and be placed on substrate pallet;
Step 2: close intake valve, open water coolant, vapor pipe is placed in outside window, open filming equipment general supply, start tool pumping source, open side and take out valve, open vacuumometer, when vacuum tightness is less than 10Pa, close side and take out valve, open magnetic valve, open slide valve, open molecular pump power source, when vacuum tightness is lower than 1 × 10 -4during Pa, unlocking electronic rifle power supply, by scanning key, shooting heater supply, be adjusted to 0.3A, preheating 5 minutes, line controls to be adjusted to manually, opens high pressure 6KV, check on manual instrument, whether line is minimum, press high pressure key, stablize 2 minutes, strengthen line clockwise to 25mA, facula position is regulated to be located in crucible, slow increase line, to 190mA, opens thermal resistance evaporation power supply, slowly increases electric current to 160A, open substrate turn switch, make it rotate with 20r/min, open baffle plate, deposit after 2 hours and close;
Step 3: by energy spectrometer, its composition is detected, the composition average out to Zr of known gained sample to sample obtained by above-mentioned steps 2 85cu 15;
Step 4: by XRD, its structure is detected to sample obtained by above-mentioned steps 2, as shown in Figure 1, do not occur obvious crystal peak, wherein first steamed bun peak is glass substrate Interference Peaks, second steamed bun peak is sample peak (30 ° ~ 35 °), and the sample amorphous structure of preparation is described.
Embodiment 6:Zr 62cu 38the preparation of metallic glass film (depositing time is respectively 1h, 2h, 3h, 4h)
Step 1: surface scale is removed in starting material Zr (99.9wt%) and Cu (99.9wt%) polishing, and successively after acetone, each 10min of alcohol ultrasonic cleaning, be placed in copper crucible and tungsten boat respectively, by substrate sheet glass and silicon chip successively after acetone, alcohol, each 10min of deionized water ultrasonic cleaning, dry up and be placed on substrate pallet;
Step 2: close intake valve, open water coolant, vapor pipe is placed in outside window, open filming equipment general supply, start tool pumping source, open side and take out valve, open vacuumometer, when vacuum tightness is less than 10Pa, close side and take out valve, open magnetic valve, open slide valve, open molecular pump power source, when vacuum tightness is lower than 1 × 10 -4during Pa, unlocking electronic rifle power supply, by scanning key, shooting heater supply, be adjusted to 0.3A, preheating 5 minutes, line controls to be adjusted to manually, opens high pressure 6KV, check on manual instrument, whether line is minimum, press high pressure key, stablize 2 minutes, strengthen line clockwise to 25mA, facula position is regulated to be located in crucible, slow increase line, to 160mA, opens thermal resistance evaporation power supply, slowly increases electric current to 165A, open substrate turn switch, make it rotate with 20r/min, open baffle plate, close after depositing 1h, 2h, 3h, 4h respectively;
Step 3: by energy spectrometer, its composition is detected to sample obtained by above-mentioned steps 2, as shown in Figure 2, the composition average out to Zr of known gained sample 62cu 38; And detect its section structure (silicon chip substrate) by surface sweeping Electronic Speculum, as shown in Figure 3, record respective thickness and be respectively 131nm, 246nm, 361nm, 480nm; Known film thickness is linear with the evaporation time, as shown in Figure 4;
Step 4: by XRD, its structure is detected to sample obtained by above-mentioned steps 2, as shown in Figure 2, do not occur obvious crystal peak, wherein first steamed bun peak is glass substrate Interference Peaks, second steamed bun peak is sample peak (30 ° ~ 45 °), and the sample amorphous structure of preparation is described.
Step 5: by TEM, its microtexture is detected to sample obtained by above-mentioned steps 2, scrape film sample with pocket knife, ultrasonic disperse detects in spirituous solution, as shown in Figure 5, present obvious amorphous haloing and there is no lattice fringe, illustrating that deposited samples is complete non-crystalline state.

Claims (4)

1. the preparation method of a Zr-Cu metallic glass film, it is characterized in that: make deposited by electron beam evaporation and thermal resistance evaporation composite film coating system, Zr and Cu is placed in electron beam evaporation copper crucible and thermal resistance evaporation tungsten boat as target respectively, substrate is held in place on the substrate pallet above copper crucible, is evacuated to 1 × 10 -4below Pa, regulate Electron Beam flow valuve at 150 ~ 190mA, regulating resistance evaporation current is 160 ~ 185A, Zr and Cu is evaporated simultaneously and is deposited on substrate, and control depositing time is 1 ~ 4h, must deposit the substrate of Zr-Cu metallic glass film.
2. preparation method according to claim 1, is characterized in that: by the Zr-Cu metallic glass film adjusting Electron Beam flow valuve and adjusting resistance evaporation current obtains heterogeneity within the scope of 160 ~ 185A within the scope of 150 ~ 190mA; The Zr-Cu metallic glass film of different thickness is obtained by adjusting depositing time within the scope of 1 ~ 4h.
3. preparation method according to claim 1 and 2, is characterized in that: gained Zr-Cu metallic glass film is Zr xcu 100-xmetallic glass film, wherein x is the atomic percent of Zr element in Zr-Cu metallic glass film, x=30 ~ 85.
4. preparation method according to claim 1 and 2, is characterized in that: the purity >=99.9wt% of the purity >=99.9wt% of starting material Zr, starting material Cu.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105002467A (en) * 2015-08-18 2015-10-28 合肥工业大学 Cu-Ti amorphous alloy film and preparation method thereof
CN105177468A (en) * 2015-08-24 2015-12-23 合肥工业大学 Cu-Ag amorphous alloy film and preparation method thereof
CN106244999A (en) * 2016-08-30 2016-12-21 张为凤 A kind of preparation method of bulk amorphous alloys
CN106835024A (en) * 2017-01-06 2017-06-13 苏州晶鼎鑫光电科技有限公司 A kind of method for preparing non-evaporable film getter
CN112359325A (en) * 2020-11-04 2021-02-12 广东广纳芯科技有限公司 Evaporation plating equipment and evaporation plating method

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105002467A (en) * 2015-08-18 2015-10-28 合肥工业大学 Cu-Ti amorphous alloy film and preparation method thereof
CN105177468A (en) * 2015-08-24 2015-12-23 合肥工业大学 Cu-Ag amorphous alloy film and preparation method thereof
CN105177468B (en) * 2015-08-24 2017-04-05 合肥工业大学 A kind of Cu Ag amorphous alloy films and preparation method thereof
CN106244999A (en) * 2016-08-30 2016-12-21 张为凤 A kind of preparation method of bulk amorphous alloys
CN106244999B (en) * 2016-08-30 2019-02-19 南通壹选工业设计有限公司 A kind of preparation method of bulk amorphous alloys
CN106835024A (en) * 2017-01-06 2017-06-13 苏州晶鼎鑫光电科技有限公司 A kind of method for preparing non-evaporable film getter
CN106835024B (en) * 2017-01-06 2019-07-12 苏州晶鼎鑫光电科技有限公司 A method of preparing non-evaporable film getter
CN112359325A (en) * 2020-11-04 2021-02-12 广东广纳芯科技有限公司 Evaporation plating equipment and evaporation plating method

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