CN104532190B - A kind of preparation method of Zr Cu metal glass thin film - Google Patents
A kind of preparation method of Zr Cu metal glass thin film Download PDFInfo
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- CN104532190B CN104532190B CN201410797996.3A CN201410797996A CN104532190B CN 104532190 B CN104532190 B CN 104532190B CN 201410797996 A CN201410797996 A CN 201410797996A CN 104532190 B CN104532190 B CN 104532190B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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Abstract
The invention discloses the new preparation process of Zr Cu metal glass thin film, it is characterised in that：Using electron beam evaporation and thermal resistance evaporation composite film coating system, Zr and Cu is individually positioned in electron beam evaporation copper crucible and thermal resistance evaporation tungsten boat as target, substrate is placed on substrate pallet, evacuation, regulation Electron Beam flow valuve and thermal resistance evaporation electric current, sedimentation time is controlled simultaneously, you can prepare the Zr Cu metal glass film samples of heterogeneity and different-thickness.The method of the present invention does not need heating/cooling device, simplifies preparation technology, reduces production cost.
Description
Technical field
The present invention relates to a kind of preparation method of Zr-Cu metal glasss thin film, belongs to metal glass film applications.
Background technology
Metal glass, also known as non-crystaline amorphous metal, atomic structure is disorderly arranged, due to having much excellent performance, such as high-strength
Degree, high rigidity, big elastic strain limit, corrosion resistance, wearability, superplasticity (in supercooling liquid phase region) and good soft magnetism
Deng therefore being regarded as a kind of new material with very big application potential by many researchers.
Amorphous alloy film not only has the excellent characteristics of block amorphous alloy, and cools down as a kind of low-dimensional materials
Speed (thin film：1010～1012K/s, block：103～108K/s) bigger, glass forming ability scope is wider, and non-to block
The bend ductility of brilliant material and 316 stainless fatigue durabilitys play a role in improving, in micro-/naiio-electro-meclianical systems (MEMS/
NEMS also there is very big potential using value with biomedical sector).
At present, prepare metal glass thin film and typically adopt sputtering method, its thin film for preparing and substrate adhesion are more firm；And
Evaporation also has that thin film degree of purity is higher, deposition velocity fast, simple operation and other advantages, and Zr-Cu alloys are a kind of typical two
First non-crystaline amorphous metal system, and with larger glass forming ability, excellent mechanical property and good heat stability, at present
The preparation method of Zr-Cu metal glass thin film mainly has magnetron sputtering method, solid state amorphization reaction method and twin-cathode ray beam coevaporation
Method.Using magnetron sputtering method due to needing the sample of argon ion bombardment target, preparation easily to contain impurity, and target need to be prepared, be operated
Process is complicated, relatively costly；Response time, reaction temperature and monolayer film thickness need to be explored using the decrystallized reaction method of solid phase
Appropriate, process are loaded down with trivial details, and preparation time is longer.During using twin-cathode ray beam evaporation, substrate can be because of two electron beam evaporation sources warm
The impact of radiation, causes temperature higher, typically adopts substrate chiller.
Content of the invention
The present invention is for avoiding the problems of above-mentioned prior art, there is provided a kind of system of Zr-Cu metal glasss thin film
Preparation Method, to can obtain the amorphous Zr-Cu metal glasss thin film of wide composition under the conditions of underlay substrate is without chiller.
The present invention solves technical problem, adopts the following technical scheme that：
The preparation method of Zr-Cu metal glasss thin film of the present invention, its feature are：Using electron beam evaporation and thermal resistance evaporation
Composite film coating system, Zr and Cu is individually positioned in electron beam evaporation copper crucible and thermal resistance evaporation tungsten boat as target,
Substrate is held in place on the substrate pallet above copper crucible, 1 × 10 is evacuated to-4Below Pa, adjusts Electron Beam flow valuve
In 150～190mA, it is 160～185A to adjust thermal resistance evaporation electric current, makes Zr and Cu while evaporating and being deposited on substrate, controls
Sedimentation time is 1～4h, and obtaining final product deposition has the substrate of Zr-Cu metal glass thin film；Gained Zr-Cu metal glasss thin film is in amorphous
State structure.
The preparation method of the present invention, its feature lie also in：By adjusting Electron Beam flow valuve in the range of 150～190mA
The Zr-Cu metal glass film samples of heterogeneity can be obtained with adjustment thermal resistance evaporation electric current in the range of 160～185A；Pass through
Adjust, in the range of 1～4h, the Zr-Cu metal glass film samples that sedimentation time can obtain different-thickness.Gained Zr-Cu metals
Glass film is ZrxCu100-xThe atomic percentage of metal glass thin film, wherein x for Zr elements in thin film, x=30～85.
Purity >=the 99.9wt% of the purity >=99.9wt% of raw material Zr, raw material Cu.
The present invention has the beneficial effect that：
The present invention prepares amorphous state Zr-Cu metal glass thin film using evaporation, and metal Zr, Cu are steamed by electron beam respectively
Rise, underlay substrate simplifies preparation technology, reduces cost without any chiller, by adjusting
Each evaporation ource electric current is saved, the Zr of heterogeneity is obtainedxCu100-xNoncrystalline membrane sample, wherein x=30～85, x are Zr elements
Atomic percentage, the thin film of different-thickness for wherein a certain components Sample, can be obtained by evaporation time, such as
Zr62Cu38Metal glass thin film, by adjust evaporation time be respectively 1h, 2h, 3h and 4h, be obtained thickness mutually should be 131nm,
The film sample of 246nm, 361nm and 480nm, and amorphous state is, it is wider that the present invention contributes to metal glass thin film
Application.
Description of the drawings
Fig. 1 is heterogeneity ZrxCu100-xThe XRD figure of (x=20～85, atomic percents of the x for Zr elements) thin film；
Fig. 2 is sample Zr62Cu38The XRD figure of different sedimentation time (1h, 2h, 3h, 4h)；
Fig. 3 is sample Zr62Cu38The surface sweeping sectional drawing of different sedimentation time (1h, 2h, 3h, 4h)；
Fig. 4 is sample Zr62Cu38Film thickness with sedimentation time (1h, 2h, 3h, 4h) variation relation；
Fig. 5 is sample Zr62Cu38The transmission electron microscope TEM figures of different sedimentation time (1h, 2h, 3h, 4h).
Specific embodiment
Electron beam evaporation used in the present invention is Chinese Academy of Sciences's Shenyang science instrument with thermal resistance evaporation composite film coating system
The DZS-500 types electron beam/thermal resistance evaporation coating system of device development center company limited.
The macrostructure characteristic of gained Zr-Cu metal glass thin film of the present invention is using X-ray diffraction method (XRD) detection, institute
With unit type it is：X ' Pert Pro MPD, PANalytical, Holland.
The microcosmos structure characteristic of gained Zr-Cu metal glass thin film of the present invention adopts Flied emission transmission electron microscope (FE-
TEM) detect, device therefor model：JEM-2100F, NEC, Japan.
The thickness and composition of gained Zr-Cu metal glass thin film of the present invention adopts field emission scanning electron microscope (FE-
SEM) and the detection of subsidiary energy disperse spectroscopy (EDS), device therefor model：SU8020, FDAC, Japan.
Embodiment 1：Zr20Cu80The preparation of metal glass thin film
Step 1：Surface scale is removed in raw material Zr (99.9wt%) and Cu (99.9wt%) polishings, and is sequentially passed through
After acetone, ethanol are cleaned by ultrasonic each 10min, it is respectively placed in copper crucible and tungsten boat, by substrate sheet glass with silicon chip successively through third
After ketone, ethanol, deionized water are cleaned by ultrasonic each 10min, dry up and be placed on substrate pallet；
Step 2：The intake valve of electron beam evaporation and thermal resistance evaporation composite film coating system is closed, cooling water is opened, exhaustor is put
In coating system main power outside window, is opened, tool pumping source of starting shooting is opened side and takes out valve, opens vacuometer, treats that vacuum is less than 10Pa
When, close side and take out valve, open electromagnetic valve, open slide valve, open molecular pump power source, when vacuum is less than 1 × 10-4During Pa, open
Electron gun power supply is opened, scanning key is pressed, filament supply of shooting is adjusted to 0.3A, preheats 5 minutes, and line control is adjusted to manually, opens high
Pressure 6KV, checks that whether line is minimum on manual instrument, presses high pressure key, stablizes 2 minutes, increases line clockwise to 25mA, adjust
Section facula position is located in crucible, is slowly increased line to 150mA, is opened thermal resistance evaporation power supply, be slowly increased electric current extremely
185A, opens substrate rotary switch so as to rotated with 20r/min, opens baffle plate, and deposition was closed after 2 hours；
Step 3：Its composition is detected by energy disperse spectroscopy to sample obtained by above-mentioned steps 2, it is known that the composition of gained sample is put down
It is Zr20Cu80；
Step 4：Its structure is detected by XRD to sample obtained by above-mentioned steps 2, as shown in figure 1, there is obvious crystal
Peak, wherein first steamed bun peak is glass substrate Interference Peaks, and second peak is the obvious sharpening of sample peak (40 °～45 °), explanation
The sample of preparation crystallization.
Embodiment 2：Zr30Cu70The preparation of metal glass thin film
Step 1：Surface scale is removed in raw material Zr (99.9wt%) and Cu (99.9wt%) polishings, and is sequentially passed through
After acetone, ethanol are cleaned by ultrasonic each 10min, it is respectively placed in copper crucible and tungsten boat, by substrate sheet glass with silicon chip successively through third
After ketone, ethanol, deionized water are cleaned by ultrasonic each 10min, dry up and be placed on substrate pallet；
Step 2：The intake valve of electron beam evaporation and thermal resistance evaporation composite film coating system is closed, cooling water is opened, exhaustor is put
In filming equipment main power outside window, is opened, tool pumping source of starting shooting is opened side and takes out valve, opens vacuometer, treats that vacuum is less than 10Pa
When, close side and take out valve, open electromagnetic valve, open slide valve, open molecular pump power source, when vacuum is less than 1 × 10-4During Pa, open
Electron gun power supply is opened, scanning key is pressed, filament supply of shooting is adjusted to 0.3A, preheats 5 minutes, and line control is adjusted to manually, opens high
Pressure 6KV, checks that whether line is minimum on manual instrument, presses high pressure key, stablizes 2 minutes, increases line clockwise to 25mA, adjust
Section facula position is located in crucible, is slowly increased line to 150mA, is opened thermal resistance evaporation power supply, be slowly increased electric current extremely
175A, opens substrate rotary switch so as to rotated with 20r/min, opens baffle plate, and deposition was closed after 2 hours；
Step 3：Its composition is detected by energy disperse spectroscopy to sample obtained by above-mentioned steps 2, it is known that the composition of gained sample is put down
It is Zr30Cu70；
Step 4：Its structure is detected by XRD to sample obtained by above-mentioned steps 2, as shown in figure 1, not occurring significantly
Crystal peak, wherein first steamed bun peak are glass substrate Interference Peaks, and second steamed bun peak is sample peak (40 °～45 °), and system is described
Standby sample amorphous structure.
Embodiment 3：Zr55Cu45The preparation of metal glass thin film
Step 1：Surface scale is removed in raw material Zr (99.9wt%) and Cu (99.9wt%) polishings, and is sequentially passed through
After acetone, ethanol are cleaned by ultrasonic each 10min, it is respectively placed in copper crucible and tungsten boat, by substrate sheet glass with silicon chip successively through third
After ketone, ethanol, deionized water are cleaned by ultrasonic each 10min, dry up and be placed on substrate pallet；
Step 2：Put air valve into, open cooling water, exhaustor is placed in outside window, open filming equipment main power, open mechanical pump electricity
Source, opens side and takes out valve, open vacuometer, and when vacuum is less than 10Pa, closing is other to take out valve, and slide valve opened by opening electromagnetic valve,
Molecular pump power source is opened, when vacuum is less than 1 × 10-4During Pa, electron gun power supply is opened, press scanning key, filament supply of shooting is adjusted
For 0.3A, preheat 5 minutes, line control is adjusted to manually, opens high pressure 6KV, check that whether line is minimum on manual instrument, presses
High pressure key, stablizes 2 minutes, increases line clockwise to 25mA, adjusts facula position and is located in crucible, is slowly increased line
To 160mA, thermal resistance evaporation power supply is opened, electric current is slowly increased to 175A, opens substrate rotary switch so as to revolved with 20r/min
Turn, open baffle plate, deposition was closed after 2 hours.
Step 3：Its composition is detected by energy disperse spectroscopy to sample obtained by above-mentioned steps 2, it is known that the composition of gained sample is put down
It is Zr55Cu45；
Step 4：Its structure is detected by XRD to sample obtained by above-mentioned steps 2, as shown in figure 1, not occurring significantly
Crystal peak, wherein first steamed bun peak are glass substrate Interference Peaks, and second steamed bun peak is sample peak (30 °～50 °), and system is described
Standby sample amorphous structure.
Embodiment 4：Zr67Cu33The preparation of metal glass thin film
Step 1：Surface scale is removed in raw material Zr (99.9wt%) and Cu (99.9wt%) polishings, and is sequentially passed through
After acetone, ethanol are cleaned by ultrasonic each 10min, it is respectively placed in copper crucible and tungsten boat, by substrate sheet glass with silicon chip successively through third
After ketone, ethanol, deionized water are cleaned by ultrasonic each 10min, dry up and be placed on substrate pallet；
Step 2：Put air valve into, open cooling water, exhaustor is placed in outside window, open filming equipment main power, open mechanical pump electricity
Source, opens side and takes out valve, open vacuometer, and when vacuum is less than 10Pa, closing is other to take out valve, and slide valve opened by opening electromagnetic valve,
Molecular pump power source is opened, when vacuum is less than 1 × 10-4During Pa, electron gun power supply is opened, press scanning key, filament supply of shooting is adjusted
For 0.3A, preheat 5 minutes, line control is adjusted to manually, opens high pressure 6KV, check that whether line is minimum on manual instrument, presses
High pressure key, stablizes 2 minutes, increases line clockwise to 25mA, adjusts facula position and is located in crucible, is slowly increased line
To 160mA, thermal resistance evaporation power supply is opened, electric current is slowly increased to 160A, opens substrate rotary switch so as to revolved with 20r/min
Turn, open baffle plate, deposition was closed after 2 hours；
Step 3：Its composition is detected by energy disperse spectroscopy to sample obtained by above-mentioned steps 2, it is known that the composition of gained sample is put down
It is Zr67Cu33；
Step 4：Its structure is detected by XRD to sample obtained by above-mentioned steps 2, as shown in figure 1, not occurring significantly
Crystal peak, wherein first steamed bun peak are glass substrate Interference Peaks, and second steamed bun peak is sample peak (30 °～45 °), and system is described
Standby sample amorphous structure.
Embodiment 5：Zr85Cu15The preparation of metal glass thin film
Step 1：Surface scale is removed in raw material Zr (99.9wt%) and Cu (99.9wt%) polishings, and is sequentially passed through
After acetone, ethanol are cleaned by ultrasonic each 10min, it is respectively placed in copper crucible and tungsten boat, by substrate sheet glass with silicon chip successively through third
After ketone, ethanol, deionized water are cleaned by ultrasonic each 10min, dry up and be placed on substrate pallet；
Step 2：Put air valve into, open cooling water, exhaustor is placed in outside window, open filming equipment main power, open mechanical pump electricity
Source, opens side and takes out valve, open vacuometer, and when vacuum is less than 10Pa, closing is other to take out valve, and slide valve opened by opening electromagnetic valve,
Molecular pump power source is opened, when vacuum is less than 1 × 10-4During Pa, electron gun power supply is opened, press scanning key, filament supply of shooting is adjusted
For 0.3A, preheat 5 minutes, line control is adjusted to manually, opens high pressure 6KV, check that whether line is minimum on manual instrument, presses
High pressure key, stablizes 2 minutes, increases line clockwise to 25mA, adjusts facula position and is located in crucible, is slowly increased line
To 190mA, thermal resistance evaporation power supply is opened, electric current is slowly increased to 160A, opens substrate rotary switch so as to revolved with 20r/min
Turn, open baffle plate, deposition was closed after 2 hours；
Step 3：Its composition is detected by energy disperse spectroscopy to sample obtained by above-mentioned steps 2, it is known that the composition of gained sample is put down
It is Zr85Cu15；
Step 4：Its structure is detected by XRD to sample obtained by above-mentioned steps 2, as shown in figure 1, not occurring significantly
Crystal peak, wherein first steamed bun peak are glass substrate Interference Peaks, and second steamed bun peak is sample peak (30 °～35 °), and system is described
Standby sample amorphous structure.
Embodiment 6：Zr62Cu38The preparation of metal glass thin film (sedimentation time is respectively 1h, 2h, 3h, 4h)
Step 1：Surface scale is removed in raw material Zr (99.9wt%) and Cu (99.9wt%) polishings, and is sequentially passed through
After acetone, ethanol are cleaned by ultrasonic each 10min, it is respectively placed in copper crucible and tungsten boat, by substrate sheet glass with silicon chip successively through third
After ketone, ethanol, deionized water are cleaned by ultrasonic each 10min, dry up and be placed on substrate pallet；
Step 2：Put air valve into, open cooling water, exhaustor is placed in outside window, open filming equipment main power, open mechanical pump electricity
Source, opens side and takes out valve, open vacuometer, and when vacuum is less than 10Pa, closing is other to take out valve, and slide valve opened by opening electromagnetic valve,
Molecular pump power source is opened, when vacuum is less than 1 × 10-4During Pa, electron gun power supply is opened, press scanning key, filament supply of shooting is adjusted
For 0.3A, preheat 5 minutes, line control is adjusted to manually, opens high pressure 6KV, check that whether line is minimum on manual instrument, presses
High pressure key, stablizes 2 minutes, increases line clockwise to 25mA, adjusts facula position and is located in crucible, is slowly increased line
To 160mA, thermal resistance evaporation power supply is opened, electric current is slowly increased to 165A, opens substrate rotary switch so as to revolved with 20r/min
Turn, open baffle plate, close after deposition 1h, 2h, 3h, 4h respectively；
Step 3：Its composition is detected by energy disperse spectroscopy to sample obtained by above-mentioned steps 2, as shown in Figure 2, it is known that gained sample
The composition average out to Zr of product62Cu38；And its section structure (silicon chip substrate) is detected by surface sweeping Electronic Speculum, as shown in figure 3, measuring phase
Thickness is answered to be respectively 131nm, 246nm, 361nm, 480nm；Understand that film thickness is linear with evaporation time, such as Fig. 4 institutes
Show；
Step 4：Its structure is detected by XRD to sample obtained by above-mentioned steps 2, as shown in Fig. 2 not occurring significantly
Crystal peak, wherein first steamed bun peak are glass substrate Interference Peaks, and second steamed bun peak is sample peak (30 °～45 °), and system is described
Standby sample amorphous structure.
Step 5：Its microstructure is detected by TEM to sample obtained by above-mentioned steps 2, film sample is scraped with pocket knife,
Ultrasonic disperse is detected in alcoholic solution, as shown in figure 5, assuming obvious amorphous haloing and without lattice fringe, is said
Bright deposited samples are completely amorphous state.
Claims (3)
1. a kind of preparation method of Zr-Cu metal glasss thin film, it is characterised in that：It is combined with thermal resistance evaporation using electron beam evaporation
Coating system, Zr and Cu is individually positioned in electron beam evaporation copper crucible and thermal resistance evaporation tungsten boat as target, will lining
Bottom is held in place on the substrate pallet above copper crucible, is evacuated to 1 × 10-4Below Pa, adjusts Electron Beam flow valuve 150
～190mA, it is 160～185A to adjust thermal resistance evaporation electric current, makes Zr and Cu while evaporating and being deposited on substrate, during control deposition
Between for 1～4h, obtaining final product deposition has the substrate of Zr-Cu metal glass thin film；
Gained Zr-Cu metal glasss thin film is ZrxCu100-xMetal glass thin film, wherein x are Zr in Zr-Cu metal glass thin film
The atomic percentage of element, x=30～85.
2. preparation method according to claim 1, it is characterised in that：By adjusting electron beam in the range of 150～190mA
Line value and the Zr-Cu metal glass thin film that thermal resistance evaporation electric current obtains heterogeneity is adjusted in the range of 160～185A；Pass through
Adjust, in the range of 1～4h, the Zr-Cu metal glass thin film that sedimentation time obtains different-thickness.
3. preparation method according to claim 1 and 2, it is characterised in that：Purity >=the 99.9wt% of raw material Zr, former material
Purity >=the 99.9wt% of material Cu.
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| CN105002467B (en) * | 2015-08-18 | 2017-11-28 | 合肥工业大学 | A kind of Cu Ti amorphous alloy films and preparation method thereof |
| CN105177468B (en) * | 2015-08-24 | 2017-04-05 | 合肥工业大学 | A kind of Cu Ag amorphous alloy films and preparation method thereof |
| CN106244999B (en) * | 2016-08-30 | 2019-02-19 | 南通壹选工业设计有限公司 | A kind of preparation method of bulk amorphous alloys |
| CN106835024B (en) * | 2017-01-06 | 2019-07-12 | 苏州晶鼎鑫光电科技有限公司 | A method of preparing non-evaporable film getter |
| CN112359325A (en) * | 2020-11-04 | 2021-02-12 | 广东广纳芯科技有限公司 | Evaporation plating equipment and evaporation plating method |
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| JPH11152561A (en) * | 1997-11-20 | 1999-06-08 | Toray Ind Inc | Electron beam vapor deposition device and production of thin coating using this |
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|---|---|---|---|---|
| JPH11152561A (en) * | 1997-11-20 | 1999-06-08 | Toray Ind Inc | Electron beam vapor deposition device and production of thin coating using this |
Non-Patent Citations (2)
| Title |
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| Formation and thermal stability of amorphous Cu-Zr thin films deposited by coevaporation;T.Minemura 等;《J.Appl.Phys.》;19880501;第63卷(第9期);第4426-4430页 * |
| Ion beam mixing to study the metallic glass formation of the Cu-Zr System;T.L.Wang 等;《Materials Letters》;20101015;第96-98页 * |
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