CN104526536A - Apparatus and methods for spectrum based monitoring of chemical mechanical polishing - Google Patents

Apparatus and methods for spectrum based monitoring of chemical mechanical polishing Download PDF

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Publication number
CN104526536A
CN104526536A CN201410667878.0A CN201410667878A CN104526536A CN 104526536 A CN104526536 A CN 104526536A CN 201410667878 A CN201410667878 A CN 201410667878A CN 104526536 A CN104526536 A CN 104526536A
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CN
China
Prior art keywords
spectrum
difference
spectra
sweeping
grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410667878.0A
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Chinese (zh)
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CN104526536B (en
Inventor
D·J·本韦格努
J·D·戴维
B·斯韦德克
H·Q·李
L·卡鲁皮亚
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Priority claimed from US11/213,675 external-priority patent/US7306507B2/en
Priority claimed from US11/261,742 external-priority patent/US7406394B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN104526536A publication Critical patent/CN104526536A/en
Application granted granted Critical
Publication of CN104526536B publication Critical patent/CN104526536B/en
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • B24B37/345Feeding, loading or unloading work specially adapted to lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

The invention discloses an apparatus and methods of spectrum base monitoring for chemical mechanical polishing, comprising detecting a spectrum base terminal, adjusting a spectrum base polishing rate and washing an upper surface of an optical head or a gasket with a window. The spectrum base terminal detection selects a reference spectrum for a specific spectrum base terminal determining logic according to an experience rule, and accordingly a terminal is determined by using the specific spectrum base terminal determining logic, i.e., a target thickness is obtained. A polishing terminal can be determined by utilizing a difference picture or a series of indicator values. A washing system generates laminar flow on the surface of an optical head. A vacuum spraying hole and a vacuum source are configured to make airflow be in a laminar flow state. The window comprises a soft plastic part and a crystallized or glass part. The spectrum base polishing rate adjustment comprises obtaining spectrum in different areas on basic materials.

Description

Based on the device and method of the monitoring of chemical mechanical polishing of spectrum
Patent application of the present invention is international application no is PCT/US2006/032659, international filing date is on August 21st, 2006, the application number entering National Phase in China is 201210109226.6, the divisional application of the application for a patent for invention that name is called " device and method based on the monitoring of chemical mechanical polishing of spectrum ".
Technical field
The present invention generally relates to the cmp of base material.
Background technology
One integrated circuit is normally formed on a base material by the deposition of a series of conductor, semiconductor or insulating barrier on silicon.One manufacturing step is included in a non-planar surface and deposits a packed layer and this packed layer planarized.For some application, this packed layer planarized can be continued until the upper surface of a patterned layer exposes.One conductive filler layer, such as, can be deposited on a patterned insulation layer to fill groove or the hole of this insulating barrier.After planarized, the Conductive layer portions between the insulating layer pattern remaining in this projection forms interlayer hole, plug hole and online, provides channel between its thin film circuit on the substrate.With regard to other application, such as oxide grinding, this packed layer planarized until be left a predetermined thickness in this non-planar surface.In addition, micro-shadow must want this substrate surface planarized usually.
Cmp (CMP) is a kind of generally acknowledged flattening method.This flattening method generally needs this base material to be arranged on a carrier or grinding head.Usually a relative rotating disc or banded grinding pad are arranged the exposed surface of this base material.This grinding pad can be normal abrasive pad or bonded-abrasive polishing pad.One normal abrasive pad has long-acting rough surface, and bonded-abrasive polishing pad then has the abrasive particles remained in an accommodation medium.This carrier head provides controllable load on the substrate, to push it against this grinding pad.Usual supply one grinds slurry to this grinding pad surface.This grind slurry comprise at least one chemical reactor and, if for normal abrasive pad, abrasive particles.
A problem of CMP judges whether grinding processing procedure completes, that is, whether a substrate layer has been planarized to expection flatness or thickness, or when has been the time point having removed desired material amount.Cross the increase that grinding (removing too much) conductive layer or film can cause circuit impedance.Otherwise, grind (removing is very little) in shortage conductive layer and then can cause short circuit.The initial thickness of this substrate layer, grind the variation that the variations such as slurry composition, grinding pad condition, the relative velocity between grinding pad and base material and the load on base material all can cause material removal rate.These variations cause the variation reaching grinding endpoint required time.Therefore, the function that grinding endpoint only can not be considered as milling time judges.
Summary of the invention
In a general points of view, the invention is characterized in a kind of computer implemented method comprising selection one reference spectra.This reference spectra is from being positioned at one first base material and the interested film reflector that thickness is greater than the target thickness white-light spectrum of returning.This reference spectra is that empirically rule is that special spectrum based endpoint decision logic is selected, and therefore when applying this special spectrum based endpoint logic and determining terminal, is namely reach this target thickness.The method comprises and obtains a current spectra.This current spectra is from being positioned at one second base material and the interested film reflector that current thickness is greater than this target thickness white-light spectrum of returning.The interested film on this second base material is made to stand a grinding steps.The method comprises judgement, and be this second base material, when this grinding steps reaches terminal.This judgement is based on this reference spectra and this current spectra.
In another general points of view, the invention is characterized in a kind of computer implemented method comprising selection two or multiple reference spectra.Each reference spectra is all from being positioned at one first base material and the interested film reflector that thickness is greater than the target thickness white-light spectrum of returning.Described reference spectra is that empirically rule is that special spectrum based endpoint decision logic is selected, and therefore when applying described special spectrum based endpoint logic and determining terminal, is namely reach this target thickness.The method comprises and obtains two or multiple current spectra.Each current spectra is all from being positioned at one second base material and the interested film reflector that current thickness is greater than this target thickness white-light spectrum of returning.The film on this second base material is made to stand a grinding steps.The method comprises judgement, and be this second base material, when this grinding steps reaches terminal, and this judgement is based on described reference spectra and described current spectra.
In another general points of view, the invention is characterized in a computer program, it comprises the instruction that can make processor selection one reference spectra.This reference spectra is from being positioned at one first base material and the interested film reflector that thickness is greater than the target thickness white-light spectrum of returning.This reference spectra is that empirically rule is that special spectrum based endpoint decision logic is selected, and therefore when applying this special spectrum based endpoint logic and determining terminal, is namely reach this target thickness.This product comprises the instruction making this processor obtain a current spectra.This current spectra is from being positioned at one second base material and the interested film reflector that current thickness is greater than this target thickness white-light spectrum of returning.The interested film on this second base material is made to stand a grinding steps.This product comprises makes this processor judge, be this second base material, when this grinding steps reaches the instruction of terminal.This judgement is based on this reference spectra and this current spectra.This product is stored in machine readable medium particularly.
In another general points of view again, the invention is characterized in the computer program be specifically stored in machine readable medium.This product comprises the instruction that can make a processor selection two or multiple reference spectra.Each reference spectra is all from being positioned at one first base material and the interested film reflector that thickness is greater than the target thickness white-light spectrum of returning.Described reference spectra is that empirically rule is that special spectrum based endpoint decision logic is selected, and therefore when applying described special spectrum based endpoint logic and determining terminal, is namely reach this target thickness.This product more comprises the instruction obtaining two or multiple current spectra.Each current spectra is all from being positioned at one second base material and the interested film reflector that current thickness is greater than this target thickness white-light spectrum of returning.The interested film on this second base material is made to stand a grinding steps.This product more comprises for judging, be this second base material, whether this grinding steps reaches the instruction of terminal, and this judgement is based on described reference spectra and described current spectra.
In a general points of view, the invention is characterized in a kind of rinse-system being used for flushing one optical head upper surface.This system comprises a gas source, and configuration provides an air-flow, a conveying spray orifice, a pipeline, it connects this gas source to this conveying spray orifice, a vacuum source, and configuration provides vacuum, one vacuum nozzle, and a vacuum line, it connects this vacuum source to this vacuum nozzle.This gas source and this conveying spray orifice are the upper surfaces being configured to guide an air-flow by this optical head.This vacuum nozzle and vacuum source are configured to make this air-flow be laminar.
In another general points of view, the invention is characterized in a kind of rinse-system being used for flushing one polishing pad window lower surface.This system comprises a gas source, and configuration provides an air-flow, a conveying spray orifice, a pipeline, it connects this gas source to this conveying spray orifice, a vacuum source, and configuration provides vacuum, one vacuum nozzle, and a vacuum line, it connects this vacuum source to this vacuum nozzle.This gas source and this conveying spray orifice are configured to guide bottom an air-flow to this polishing pad window, wherein prevents coagulation to be formed on the lower surface of this polishing pad window.
In a general points of view, the invention is characterized in a kind of assembly for cmp.This assembly comprises a grinding pad, has a lapped face.This assembly comprises a firm window, is arranged in this grinding pad to provide the optical nearing by this grinding pad.This firm window comprises the Part I formed by polyurethane and the Part II formed by quartz.The lapped face copline of the surface of this Part I and this grinding pad.
In another general points of view, the invention is characterized in a kind of grinding pad, it comprises the grinding layer having a upper surface and a lower surface.This grinding pad comprises a hole, has one first opening at this upper surface and one second opening at this lower surface.This upper surface is a lapped face.This grinding pad comprises a window, and it contains the Part II of Part I and crystallization or the category of glass formed by flexible plastic.This window is transparent for white light.This window is arranged in this hole, and therefore this Part I clogs this hole, this Part II then on the bottom side of this Part I, wherein this Part I act as one grind slurry sealing block.
In another general points of view, the invention is characterized in a kind of method manufacturing grinding pad.The method comprises the material block of crystallization or category of glass is placed in a polishing pad window mold, and this material block is transparent for white light.The method comprises and is distributed in this mold by the liquid precursor of a soft plastic material, and this soft plastic material is transparent for white light.The method comprises this liquid precursor of solidification to form the window having the Part II of Part I and crystallization or the category of glass formed by soft plastic material.The method comprises this window is placed in a grinding pad mold.The method comprises and the liquid precursor of a grinding pad material is distributed in this grinding pad mold.The method comprises the liquid precursor of this grinding pad material of solidification to produce this grinding pad, wherein this window is arranged in this grinding pad mold, therefore, when producing this grinding pad, this window is arranged in this grinding pad, and make this Part I act as one grind slurry sealing block.
In another general points of view, the invention is characterized in a kind of method manufacturing grinding pad.The method comprises the material block of crystallization or category of glass is placed in a polishing pad window mold, and this material block is transparent for white light.The method comprises and is distributed in this mold by the liquid precursor of a soft plastic material, and this soft plastic material is transparent for white light.The method comprises this liquid precursor of solidification to form the window having the Part II of Part I and crystallization or the category of glass formed by soft plastic material.The method comprises and is formed containing the grinding layer of a hole, and this grinding layer has a upper surface and a lower surface, and this hole has one first opening at this upper surface and one second opening at this lower surface, and this upper surface is a lapped face.The method comprises and embeds in this hole by this window, and this window is arranged in this hole, and therefore this Part I clogs this hole, and this Part II is then on the bottom side of this Part I, and wherein this Part I act as one and grinds slurry sealing and block.
In another general points of view, the invention is characterized in a kind of method manufacturing grinding pad.The method comprises the Part I of formation one polishing pad window, and this Part I has a groove, and is transparent for white light.The method comprises and embeds in this groove by a crystallization or glass-like materials block, and this material block is transparent for white light.The method comprises and is formed containing the grinding layer of a hole, and this grinding layer has a upper surface and a lower surface, and this hole has one first opening at this upper surface and one second opening at this lower surface, and this upper surface is a lapped face.The method comprises and embeds in this hole by this window, and this window is arranged in this hole, and therefore this Part I clogs this hole, and this Part II is then on the bottom side of this Part I, and wherein this Part I act as one and grinds slurry sealing and block.
In another general points of view, the invention is characterized in a kind of computer implemented method.During a polish process, obtain the first spectrum of reverberation from the first area a base material, and obtain the second spectrum from the second area this base material.This first spectrum and this second spectrum and a library of spectra are compared, to judge the first pointer of this first spectrum, and the second pointer of this second spectrum.Different time points during this polish process, obtains the 3rd spectrum of reverberation, and obtains the 4th spectrum from this second area from this first area.3rd spectrum and the 4th spectrum and this library of spectra are compared, to judge the 3rd pointer of this first area, and the 4th pointer of this second area.The grinding rate of this first area judges from this first pointer and the 3rd pointer, and the grinding rate of this second area is then judge from this second pointer and the 4th pointer.Based on this first grinding rate, this second grinding rate, the first object relative thickness of this first area and the second target relative thickness of this second area, for this second area determines adaptation grinding rate, be substantially ground to the simultaneous grinding of this first object relative thickness in this first area to this second target relative thickness to make this second area.
Enforcement of the present invention can comprise one or more following feature.This first area can be an interior zone, and this second area can be an outer annular region.When this first object relative thickness can drop in the predetermined threshold apart from this second target relative thickness to judge can to comprise judgement by the adaptation grinding rate of this second area.Judge that the adaptation grinding rate of this second area can comprise the estimation terminal time judging this polish process.Obtain this first spectrum and the second spectrum can comprise and obtain white-light spectrum.The method more can comprise the parameter of this grinding system of adjustment, can grind by this adaptation grinding rate to make this second area.Judge that the step of this adaptation grinding rate can perform on a setting base material, and the step adjusting this grinding system parameter can perform on a product base material, or these two steps all can perform on this product base material.The parameter adjusting this grinding system can comprise adjustment pressure.Judge that an adaptation grinding rate can comprise to judge to allow the section along this substrate diameter have the grinding rate of flat profile or bowl-like profile when this polish process completes.Obtain this first spectrum and this second spectrum can be included in this base material of different rotary position sampling.Obtain this first spectrum and can comprise with this second spectrum the spectrum measured and reflect from an oxide layer.The method more can comprise grinding one and set base material until this setting base material is etched excessively, during this grinding, obtain several spectrum from the single area of this testing substrates; And store this several spectrum together with the time point obtaining each spectrum, to create the steps such as this library of spectra.The method can more comprise the pointer createing this library of spectra, and wherein a pointer represents the spectrum obtained from this setting base material at a particular point in time.
In another general points of view, the invention is characterized in the method for a kind of monitoring one cmp processing procedure.Guide a multi-wavelength light beam on the base material ground, and measure the spectrum of the light of returning from this substrate reflectance.This light beam is moved with the path of crossing this substrate surface.Obtain a series of spectral measurement from this signal, and judge the radial position on the substrate of each spectral measurement.According to described radial position, described spectral measurement classification is become several radial extensions.The grinding endpoint of this base material is judged from the spectral measurement at least one of these several radial extensions.The method more can comprise the adaptation grinding rate of one of the described radial extension of judgement and apply this adaptation grinding rate to one of described radial extension.
As institute user in this description, base material one word can comprise, such as, a product base material (such as, containing multiple internal memory or processor crystal grain person), a testing substrates, a naked base material and a grid base material (gating substrate).This base material can be under the various fabrication stages of integrated circuit, and such as, this base material can be a naked wafer, or it can comprise one or more deposition and/or patterned layer.Base material one word can comprise disk and rectangular tab.
The possible advantage of enforcement of the present invention can comprise following one or more.Almost can not need to consider that terminal point determining is made in the variation of grinding rate.Affect the factor of grinding rate, such as, consume thing, usually do not need to list consideration in.The use (relative to single reference spectra and/or simple target spectrum) of multiple reference and/or target optical spectrum improves the accuracy of terminal point determining, by providing usually the difference more level and smooth than the figure using single reference spectra technology to produce or terminal figure.A kind of compared with making the rinse-system grinding slurry drying on the substrate surface of grinding.A kind ofly improve the accuracy of terminal point determining and/or the polishing pad window of the degree of accuracy.
The details of one or more embodiment of the present invention proposes at following accompanying drawing and in describing.Further feature of the present invention, object and advantage can by described descriptions and graphic, and described claim and becoming apparent.
Accompanying drawing explanation
Fig. 1 marks a chemical-mechanical grinding device.
2A-2H figure marks the enforcement of a polishing pad window.
Fig. 3 marks the enforcement of a rinse-system.
The another kind that Fig. 4 marks this rinse-system is implemented.
Fig. 5 is the top view of a grinding pad, and the position of carrying out in site measurement is shown.
Fig. 6 A marks the light praseodymium obtained by site measurement.
Fig. 6 B marks the differentiation of the spectrum obtained by site measurement when grinding progress.
Fig. 7 A marks a kind of method obtaining target optical spectrum.
Fig. 7 B marks a kind of method obtaining reference spectra.
Fig. 8 A and 8B marks a kind of method of terminal point determining.
Fig. 9 A and 9B marks the another kind of method of terminal point determining.
Figure 10 A and 10B marks the another kind of optional method of terminal point determining.
Figure 11 marks the enforcement judging terminal.
Figure 12 marks the crest of a spectrum to trough standardization.
Figure 13 marks the smoothing effect using multiple reference spectra to provide.
Figure 14 marks a kind of method obtaining spectrum during grinding in region.
Figure 15 marks grinding rate in a kind of adjustment region to reach the method for expection profile.
Figure 16 marks the mapping of grinding progress for the time that grinding rate passes through the processing procedure of adjustment.
Figure 17 marks the grinding progress of grinding rate without the processing procedure of adjustment for the mapping of time.
Figure 18 marks the mapping of grinding for the time using feed forward approach to control the processing procedure ground.Various graphic in identical element numbers represent identical assembly.
Primary clustering symbol description
10 base material 20 milling apparatus
22 drive rod 24 platforms
25,71 axle 26 grooves
30 grinding pad 32 outer grinding layers
34 back-grinding layer 36 optical nearings
38 grind slurry 39 arm
50 in-situ monitoring module 51 light sources
52 optical detector 53 optical heads
54 optical cable 55 trunks
56,58 branch 70 carrier head
72 supporting construction 74 carrier drive rods
76 motor 202 polyurethane portion
204 quartz portions 206,314 upper surfaces
208 lapped face 210 lower surfaces
212 ridge 214 paths
216 adhesive 218 lips
220 refraction glue 222 Connectorized fiber optic cablings
302,402 gas source 304,404 pipelines
306,406 conveying spray orifices 308,408 aspirate spray orifice
310,410 vacuum line 312,412 vacuum sources
501-511 point 602,604,606 spectrum
801,803,901,903,1003,1004 figures
805 threshold value 807 minimum of a values
905 threshold range 907 target differences
1005 lines 1302,1304,1306 figures
1505 stablize grinding phase 1510,1610 central area
1515,1630 fringe region 1520,1620 zone lines
1530 pointer 1535 rotation numbers
1640 threshold distance 1650 can accept limit
Detailed description of the invention
Fig. 1 marks the milling apparatus 20 that can be used to grinding one base material 10.This milling apparatus 20 comprises a rotatable plate-like platform 24, is provided with a grinding pad 30.This platform can rotate centered by axle 25.Such as, the rotatable drive rod 22 of a motor rotates this platform 24.This grinding pad 30 can removably be fixed on this platform 24, such as, utilizes one deck adhesive.When exhausting, this grinding pad 30 dismountable is also replaced.This grinding pad 30 can be the two-layer grinding pad with outer grinding layer 32 and softer back-grinding layer 34.
Optical nearing 36 by this grinding pad is provided by comprising a hole (that is, running through the hole of this grinding pad) or a firm window.This firm window can be fixed on this grinding pad, although in some is implemented, this firm window can be supported on this platform 24, and stretches in the hole in this grinding pad.This grinding pad 30 is generally be seated on this platform 24, and this hole or window is positioned at be arranged on the optical head 53 of the groove 26 of this platform 24.Therefore this optical head 53 has the optical nearing to the base material ground by this hole or window.This optical head further describes in the wings.
This window can be, such as, hard crystallization or glass-like materials, such as, quartz or glass, or softer plastic material, such as silicones, polyurethane or halogen polymer (such as, fluorinated polymer), or mention the composition of material.This window can be transparent for white light.If the upper surface of this firm window is a hard crystallization or glass-like materials, then this upper surface should be enough dark in avoid scratch from this lapped face depression.If this upper surface is very close and may contact with this lapped face, then the upper surface of this window should be a softer plastic material.In some is implemented, this firm window is fixed in this grinding pad and is polyurethane window, or have the window of composition of quartz and polyurethane.This window can have high penetration, such as, and the penetrance of about 80%, for the monochromatic light of particular color, such as, blue light or ruddiness.This window is salable on this grinding pad 30, and therefore liquid can not be spilt by the interface of this window and this grinding pad 30.
In implementing one, this window comprises hard crystallization or the glass-like materials of the softer plastic material coat of covering one.The upper surface of this softer material can with this lapped face copline.The lower surface of this stiff materials can copline or depression compared to the lower surface of this grinding pad.In particular, if this grinding pad comprises two-layer, this firm window may be incorporated in this grinding layer, and this lower floor can have the hole that window firm in this aligns.
Suppose that this window comprises the composition of hard crystallization or glass-like materials and softer plastic material, then fix this two parts without any need for adhesive.Such as, in implementing one, do not use adhesive in conjunction with the polyurethane portion of this window and this quartz portions.Or, transparent adhesive for white light can be used, maybe can apply a kind of adhesive, and make can not by this adhesive by the light of this window.For example, this adhesive can be applied around the interface only between this polyurethane and quartz portions.A refraction glue can be applied on this window lower surface.
This window lower surface optionally comprises one or more groove.One groove can through plastotype with hold, such as, the terminal of a Connectorized fiber optic cabling or the terminal of a vortex induction device.This groove terminal of the terminal of this Connectorized fiber optic cabling or this vortex induction device can be arranged on substrate surface one section that distance ground is shorter than the distance of this thickness window.Comprise a hard crystalline portion or category of glass part and this groove is by being processed to form in the enforcement in this part at this window, this groove is to remove the scratch caused by machining through grinding.Or, a solvent and/or a liquid polymer can be applied to this groove surfaces, to remove the scratch caused by machining.Removing usually because the scratch that machining causes can reduce scattering, and can improve the penetrance of the light by this window.
Fig. 2 A-2H marks the various enforcements of this window.As shown in Figure 2 A, this window can have two parts, polyurethane portion 202 and a quartz portions 204.Described part is several layerings, is arranged on the form above this quartz portions 204 with this polyurethane portion 202.This window can be arranged in this grinding pad, and makes the upper surface 206 of this layer of polyurethane and lapped face 208 copline of this grinding pad.
As shown in Figure 2 B, this polyurethane portion 202 can have the groove that this quartz portions sets within it.The lower surface 210 of this quartz portions comes out.
As shown in Figure 2 C, this polyurethane portion 202 can comprise ridge, such as, gos deep into the ridge 212 in this quartz portions 204.Described ridge can be done to reduce this polyurethane portion 202 is pulled away from this quartz portions 204 possibility because of the friction from this base material or clasp.
As shown in Figure 2 D, the interface between this polyurethane portion 202 and quartz portions 204 can be a rough surface.The bond strength of two parts of this window can be improved in this kind of surface, also can reduce this polyurethane portion 202 is pulled away from this quartz portions 204 possibility because of the friction from this base material or clasp.
As shown in Figure 2 E, the thickness of this polyurethane portion 202 can be unequal.The thickness of the position on a beam path 214 is less than the thickness of the position not on this beam path 214.For example, thickness t 1be less than thickness t 2.Or the thickness at this window edge place can be thinner.
As shown in Figure 2 F, an adhesive 216 can be utilized to link this polyurethane portion 202 and this quartz portions 204.This adhesive can be applied and make it can not on this beam path 214.
As shown in Figure 2 G, this grinding pad can comprise a grinding layer and a backing layer.This layer of polyurethane 202 extends through this grinding layer, and enters this backing layer at least partly.Hole in this grinding layer comparable of hole in this backing layer is large, and polyurethane portion in polyurethane portion this grinding layer comparable in this backing layer is wide.Therefore this grinding layer provides a lip 218, and it is given prominence to and also can do to make this polyurethane portion 202 leave the pulling force of this quartz portions 204 in order to resist on this window.This polyurethane portion 202 conforms to the void shape of the layering of this grinding pad.
As illustrated in figure 2h, refraction glue 220 can be applied at the lower surface 210 of this quartz portions 204, march to the medium of this window to provide light from a Connectorized fiber optic cabling 222.This refraction glue 220 can fill the distance between this Connectorized fiber optic cabling 222 and this quartz portions 204, and can have the refractive index that meets or the refractive index between the refractive index of this Connectorized fiber optic cabling 222 and this quartz portions 204.
In the enforcement that this window contains quartz and polyurethane portion, this layer of polyurethane should have the length of life at this grinding pad, and this polyurethane portion can not exhaust and expose the thickness of this quartz portions.This quartz can be sunken from this grinding pad lower surface, and this Connectorized fiber optic cabling 222 can extend partially in this grinding pad.
Above-mentioned window and grinding pad can be manufactured by some technology.Such as, can link with its outer grinding layer 32 with the backing layer 34 of adhesive by this grinding pad.There is provided the hole of optical nearing 36 can be formed in this grinding pad 30, such as, by cutting or this grinding pad 30 shaping to comprise this hole, and this window can to embed in this hole and to be fixed on this grinding pad 30, such as, utilizes adhesive.Or the liquid precursor of this window of can providing and delivering also is solidified to form this window to the hole of this grinding pad 30.Such as, or firm a penetrated component, above-mentioned crystallization or category of glass part, can be placed in liquid grinding pad material, and this liquid grinding pad material curable can penetrate the grinding pad of component to be formed around this.In the situation of two below, one block of grinding pad material can be formed, and can cut out from this block the grinding pad that one deck has shaping window.
In the Part I comprising a crystallization or category of glass at this window and the enforcement of Part II of being made up of soft plastic material, described liquid precursor technology can be applied in the hole of this grinding pad 30, form this Part II.And then embed this Part I.If embed this Part I before the liquid precursor solidification of this Part II, then solidification can in conjunction with this first and second part.If embed this Part I after the liquid precursor solidification of this Part II, then an adhesive can be utilized to fix this first and second part.
This milling apparatus 20 can comprise a rinse-system to improve the propagation of light by this optical nearing 26.This rinse-system has different enforcement.Comprise a hole at this grinding pad 30 but not in the enforcement of the milling apparatus 20 of a firm window, implement this rinse-system to provide fluid on the upper surface of this optical head 53, such as, gas or liquid, laminar flow.(this upper surface can be the upper surface of the lens be contained in this optical head 53).Not transparent slurry that grinds can be washed from this optical nearing and/or avoid grinding slurry dry on this upper surface by the fluid laminar flow on this optical head 53 upper surface, thus, improves the propagation by this optical nearing.In the enforcement that this grinding pad 30 comprises a firm window but not a hole, implement this rinse-system to guide an air-flow to this window lower surface.This air-flow can avoid coagulation to be formed on the lower surface of this firm window, not so can hinder optical nearing.
Fig. 3 marks the enforcement of this laminar flow rinse-system.This rinse-system comprises gas source 302, pipeline 304, conveying spray orifice 306, and aspirates spray orifice 308, vacuum line 310 and a vacuum source 312.This gas source 302 and vacuum source can be configured to make it import and to extract out same or analogous gas flow.This conveying spray orifice 306 is the penetrated upper surfaces 314 making gas laminar flow be conducted through this in-situ monitoring module through setting, and can not be directed to the substrate surface place of being ground.Therefore, the substrate surface that gas laminar flow can not dry be ground grinds slurry, this can produce harmful effect to grinding.
Fig. 4 marks the enforcement for avoiding coagulation to be formed in the rinse-system on this firm window lower surface.This system reduces or avoids coagulation to be formed in this polishing pad window lower surface.This system comprises gas source 402, pipeline 404, conveying spray orifice 406, and aspirates spray orifice 408, vacuum line 410 and a vacuum source 412.This gas source 402 and vacuum source can be configured to make it import and to extract out same or analogous gas flow.This conveying spray orifice 406 makes gas laminar flow be directed to window lower surface place in this grinding pad 30.
In the enforcement that the another kind of the enforcement of Fig. 4 is selected, this rinse-system does not comprise a vacuum source or vacuum line.Replace these spare parts, this rinse-system comprises the fan be formed in this platform, and makes the gas in this firm beneath window space of importing can be pumped down to this platform side, or, other moist place can be tolerated to this milling apparatus.
Above-mentioned gas source and vacuum source can be arranged on away from this platform place, therefore can not rotate together with this platform.In the case, each rotary coupler all containing conveying gas of this supply line and this vacuum line.
Get back to Fig. 1, what this milling apparatus 20 comprised a combination grinds slurry/rinsing arm 39.During grinding, this arm 39 can distribute and grind slurry 38 containing liquid and pH adjusting agent.Or this milling apparatus comprises can disperse to grind slurry to grinding pad 30 grinding slurry port.
This milling apparatus 20 comprises the carrier head 70 that this base material 10 can be made to keep leaning on this grinding pad 30.This carrier head 70 is suspended in a supporting construction 72, and such as, one rotates tool, and utilizes a carrier drive rod 74 to be connected to a carrier head rotation motor 76, and therefore this carrier head can rotate centered by an axle 71.In addition, this carrier head 70 can being formed at teeter in the radial slit in this supporting construction 72.During operation, this platform rotates centered by its axis of centres 25, this carrier head then centered by its axis of centres 71 rotate, and on this grinding pad upper surface transverse shifting.
This milling apparatus also comprises an optical monitoring system, and it can be used to as above judge grinding endpoint.This optical monitoring system comprises light source 51 and an optical detector 52.Light by the optical nearing 36 in this grinding pad 30 from this light source 51, clashes into this base material 10 and is reflected back through this optical nearing 36 from it, and marching to this optical detector 52.
The optical cable 54 of a fork can be used from this light source 51 transmission ray to this optical nearing 36, and get back to this optical detector 52 from this optical nearing 36 transmission ray.The optical cable 54 of this fork can comprise " trunk " 55 and two " branch " 56 and 58.
As mentioned above, this platform 24 comprises this groove 26, is wherein provided with this optical head 53.This optical head 53 holds one end of the trunk 55 of this point of bifurcated fiber optic cable 54, and it is configured to transmission ray and comes and goes the substrate surface ground.This optical head 53 can comprise lens above one or more end points being positioned at this point of bifurcated fiber optic cable 54 or window (as shown in Figure 3).Or this optical head 53 can hold this trunk 55 end points in the firm window place only in this grinding pad adjacent.This optical head 53 can hold the spray orifice of above-mentioned rinse-system.This optical head 53 can shift out from this groove 26 according to need, such as, to carry out preventative or corrective maintenance.
This platform comprises a removable in-situ monitoring module 50.This in-situ monitoring module 50 can comprise one or more as lower member: this light source 51, this optical detector 52 and transmission and reception signal come and go the circuit of this light source 51 and optical detector 52.Such as, the output of this detector 52 can be such as, by the rotary coupler in this drive rod 22, a slip ring, to the digital and electronic signal of the controller of this optical monitoring system.Similarly, this light source can respond and be opened or close by this rotary coupler from this controller to the control command in the digital and electronic signal of this module 50.
This in-situ monitoring module also can hold the respective end points of the component 56 and 58 of this fork optical fiber 54.This light source can emission of light, and it is through being conveyed through this branch 56 and leaving from the end points of the trunk 55 being positioned at this optical head 53, and impinges upon on the base material that ground.The light gone out from this substrate reflectance is received at the end points of the trunk 55 being positioned at this optical head 53, and is conveyed through this branch 58 to this optical detector 52.
In implementing one, this fork Connectorized fiber optic cabling 54 is a branch of optical fiber.This bundle optical fibre packages is containing one first group of optical fiber and one second group of optical fiber.Optical fiber in this first group is through connecting with from this light source 51 transmission ray to the substrate surface ground.Optical fiber in this second group is through connecting to receive the light reflected from the substrate surface ground, and transmits light to one optical detector received.Described optical fiber can make the optical fiber in this second group become the shape of similar X through setting, it is (as with the viewing of the section of this fork optical fiber 54) centered by the longitudinal axis of this fork optical fiber 54.Or, other configuration can be implemented.Such as, the optical fiber in this second group can become the shape of similar V, and it is mirror image each other.The fork optical fiber be suitable for can be buied from the Verity Instruments company of Dezhou Carrollton.
This polishing pad window and be close to this polishing pad window fork Connectorized fiber optic cabling 54 trunk 55 end points between usually have an optimum distance.This distance can empirically rule determine and be subject to, such as, and the factor impacts such as the reflectivity of this window, the beam shape launched from this fork Connectorized fiber optic cabling and the distance of base material monitored.In implementing one, this fork Connectorized fiber optic cabling makes the end points of this window of next-door neighbour as far as possible near this bottom of window, but really do not contact this window.In this implements, this milling apparatus 20 can comprise a kind of mechanism, and such as, as a part for this optical head 53, it can adjust the distance between the end points of this fork Connectorized fiber optic cabling 54 and this polishing pad window lower surface.Or next-door neighbour's end points of this fork Connectorized fiber optic cabling is embedded in this window.
This light source 51 can transmitting white.In implementing one, the white light launched comprises the light of wavelength 200-800 nanometer.The light source be applicable to is xenon lamp or xenon-mercury lamp.
This optical detector 52 can be a spectrometer.Spectrometer is a kind of optical instrument of the light characteristic being used for measuring in a part of scope of electromagnetic spectrum substantially, such as, and intensity.The spectrometer be applicable to is a grating spectrograph.Typical case's output of one spectrometer is the light intensity as function of wavelength.
Optionally, this in-situ monitoring module 50 can comprise other inductor component.This in-situ monitoring module 50 can comprise, such as, and vortex induction device, laser, light emitting diode and optical detector (photodetector).Comprise in the enforcement of vortex induction device in this in-situ monitoring module 50, this module 50 normally makes the working range that can be positioned at this vortex induction device by grinding base material through setting.
This light source 51 and optical detector 52 with can control its arithmetic unit operating and receive its signal and be connected.This arithmetic unit can comprise a microprocessor arranged near this milling apparatus, such as, and a personal computer.In control, this arithmetic unit is passable, such as, allows the rotation of the activation of light source 51 and this platform 24 occur simultaneously.As shown in Figure 5, this computer can make this light source 51 just start to launch a series of flash of light before this base material 10 is by this in-situ monitoring module, and terminates immediately after passing through.(the every bit 501-511 described represents the position of light impinges from this in-situ monitoring module and reflection).Or this computer can make this light source 51 just start continuous luminous before this base material 10 is by this in-situ monitoring module, and terminates immediately after passing through.
In reception signal, this arithmetic unit can receive, such as, containing the signal of information of spectrum describing this light received by optical detector 52.Fig. 6 A to mark from the single flash operation of light source launch and the example of spectrum measured by the light of returning from this substrate reflectance.This spectrum illustrates an original spectrum (raw spectrum), namely, and the spectrum before standardization.Spectrum 602 is persons measured by the light of returning from a product substrate reflectance.Spectrum 604 is persons measured by the light that reflects from a base silicon base material (only having the wafer of a silicon layer).Spectrum 606 is from the light received by this optical head 53, when not having base material to be arranged on above this optical head 53.In the case, be called dark condition in this manual, received light is normally from the light of this polishing pad window scattering.
This arithmetic unit can process above-mentioned signal, to judge the terminal of a grinding steps.Be not limited to any particular theory, the spectrum of the light reflected from this base material 10 is along with the evolution of grinding progress.Fig. 6 B provides the example of the grinding progress evolution along with interested film.The spectrum of Fig. 6 B is through standardization.The not collinear different time points representing grinding of spectrum.As can the person of seeing, the spectral characteristic of reverberation changes along with this film thickness and changes, and specific film thickness presents specific spectrum.This arithmetic unit can perform the logic judging when to reach terminal based on one or more spectrum.One or more spectrum of terminal point determining institute phytyl can comprise target optical spectrum, reference spectra or both.
Person as used in this specification, a target optical spectrum represents the spectrum that the white light of being returned by interested film reflector presents, when this interested film has target thickness.For example, target thickness can be 1,2 or 3 micron.Such as, or this target thickness can be 0, when interested film is eliminated and exposes underlying film.
Interested specific thicknesses can have and usually have multiple target optical spectrum.Can be because grinding usually occurs under restriction speed like this, and interested film be maintained time that this target thickness one section can obtain multiple spectrum.In addition, the zones of different of patterned substrate produces different spectrum (even if described spectrum is the same time point acquisition during grinding) usually.Such as, the spectrum of the light reflected from the line of cut of base material is different from the spectrum of the light that the array from this base material reflects (that is, shape is different).This phenomenon is called pattern effect in this manual.Therefore, a specific objective thickness can have multiple spectrum, and the plurality of spectrum can comprise spectrum different from each other because of pattern effect.
Fig. 7 A marks the method 700 obtaining one or more target optical spectrum.The characteristic (step 702) of the base material that measured pattern is identical with this product base material.In this manual measured base material is called " setting " base material.This setting base material can be the base material similar or identical with product base material purely, or this setting base material can be a base material from batch.Described characteristic can comprise thickness before the grinding of the interested film of interested specific location on the substrate.Usually, the thickness of multiple position is measured.Described position is generally the grain properties through selection in the identical type of each position measurement.Measurement can perform at a measurement station place.
This setting base material grinds according to desired grinding steps, and during grinding, collect the spectrum (step 704) of the white light reflected from the substrate surface ground.Grinding and spectral collection can perform in above-mentioned milling apparatus.During grinding, spectrum is by this in-situ monitoring systematic collection.Platform rotates and all can collect multiple spectrum each time.This base material was grinding, that is, grinding exceedes the terminal of estimation, therefore can obtain the spectrum of the light of returning from this substrate reflectance when reaching target thickness.
Measure the characteristic (step 706) by the base material being grinding.Described characteristic comprises the thickness after the grinding of ad-hoc location or the multiple position adopted in the measurement before the milling of interested film.
Select with measured thickness and collected spectrum, from collected spectrum, one or more spectrum (step 708) that can present when this base material has desired thickness.In particular, can perform linear interpolation with base material thickness after film thickness before measured grinding and grinding, which spectrum what can present during to determine to reach target film thickness is.Determined reach this target thickness time the spectrum that can present be designated as the target optical spectrum of this batch of base material.Usually, three in the spectrum collected by appointment is target optical spectrum.Or, specify five, seven and nine spectrum to be target optical spectrum.
Optionally, the spectrum collected by process is to strengthen accuracy and/or the degree of accuracy.Can process described spectrum with, such as, be standardized into as collective reference, it is average, and/or from wherein filtering noise.The particular implementation of these process operations is described below.
Person as used in this specification, a reference spectra represents the spectrum relevant with target film thickness.Usually empirically rule is that special spectrum based endpoint decision logic selects one, two or more reference spectra, therefore when this computer installation apply this special spectrum based endpoint decision logic determine terminal time, be namely reach target thickness.This or described reference spectra can repeat to select, as describing with reference to figure 7B below.Reference spectra is not target optical spectrum usually.Otherwise, reference spectra normally when the thickness of interested film is greater than target thickness, from the spectrum of the light that this substrate reflectance is returned.
It is the method 701 that a specific objective thickness and special spectrum based endpoint decision logic select a reference spectra that Fig. 7 B marks.In certain embodiments, two or more spectrum can be selected, but not only select one.Measure a setting base material and grind (step 703) as described in previous step 702-706.In particular, the spectrum collected by storage and the measured time point of the spectrum that each is collected.During grinding, platform rotates and all can collect multiple spectrum each time.
For this specifically sets the grinding rate (step 705) that base material calculates milling apparatus.Grinding thickness T before and after can be utilized 1, T 2average abrasive speed PR is calculated with actual milling time PT, such as, PR=(T 2-T 1)/PT.
Calculate the terminal time that this specifically sets base material, to provide a check point to test this reference spectra, (step 707) as discussed below.Terminal time can be calculated based on making before the grinding of the grinding rate PR calculated, interested film the target thickness TT of thickness ST and interested film.This terminal time can simple linear interpolation method calculate, and supposes that this grinding rate is fixing during whole grinding processing procedure, such as, and ET=(ST-TT)/PR.
Optionally, another base material of grinding this batch of patterned substrate can be utilized, stop grinding at calculated terminal time, and the thickness measuring interested film assess calculated terminal time.If thickness is in the satisfactory scope of this target thickness, then namely calculated terminal time is gratifying.Otherwise, calculated terminal time must be recalculated.
Spectrum collected by selection be appointed as this reference spectra (step 709) in the lump.Selected spectrum is the spectrum of the light of returning from this substrate reflectance when the thickness of interested film is greater than and approximates greatly this target thickness.Or, specify two or more spectrum as this reference spectra.Usually, three in the spectrum collected by appointment as reference spectra.Or, specify five, seven or nine spectrum to be reference spectra.As this target optical spectrum, multiple reference spectra can be had, because this grinding rate limits.
In implementing one, this particular platform identifying the terminal time calculated corresponding to step 707 rotates, and spectrum collected during selecting this particular platform to rotate is to be appointed as reference spectra.For example, collected spectrum can from the middle section of this base material.Corresponding to calculated terminal time this platform rotate be corresponding to the calculated terminal time emergence period between platform rotate.For example, if the terminal time calculated is 25.5 seconds, then this particular platform rotation corresponding to this terminal time calculated is that the platform ground in this grinding processing procedure between 25.5 second emergence period rotates.
Be utilized as spectrum that this setting base material collects and be appointed as this or described reference spectra should or described selection spectrum carry out this specific endpoint determination logic (step 711) of emulated execution.Perform this logic to produce empirically rule and derive but the terminal time of to be this logic decision of emulation be terminal.
Empirically rule is derived but be that the terminal time of emulation compares (step 713) with the terminal time calculated.If this terminal time that empirically rule derives drops in the threshold range of calculated terminal time, then know that reference spectra selected at present can produce the result meeting this check point.Therefore, when utilizing this or described reference spectra performs this endpoint logic under execution environment, this system positively should be able to detect terminal at this target thickness place.Therefore, can retain this or described reference spectra as other base material of this batch the term of execution the reference spectra (step 718) of grinding.Otherwise, suitably repeat step 709 and 711.
Optionally, can be repeat each time (that is, each time perform step 709 and 711) change except select should or described spectrum except other become because of.Such as, the threshold range of the minimum of a value of above-mentioned spectral manipulation (such as optical filter parameter) and/or distance difference figure can be changed.The threshold range of the minimum of a value of this difference picture and this difference picture is described below
Fig. 8 A marks the method 800 using spectrum based endpoint decision logic to judge the terminal of a grinding steps.Above-mentioned milling apparatus is utilized to grind another base material (step 802) in the patterned substrate of this batch.Following step is performed in the rotation each time of this platform.
Measure one or more spectrum of the white light reflected from the substrate surface ground, to obtain one or more current spectra (step 804) that current platform rotates.It is the example of the spectrum recorded during current platform rotates at a spectral measurement at 501-511 place (Fig. 5).Optionally process spectrum measured during current platform rotates, to strengthen accuracy and/or the degree of accuracy, as above with reference to figure 7A one depicted, and as rear reference Figure 11 one depicted.
In some is implemented, if only measure a spectrum, then come as this current spectra with this spectrum.If the more than one current spectra of a platform wheel measuring, then divided into groups, average in each group, and specify described average as current spectra.The radial distance at this base material center of available range divides into groups described spectrum.For example, the spectrum that one first current spectra desirable leisure point 502 and 510 place (Fig. 5) records, the spectrum that one second current spectra desirable leisure point 503 and 509 place (Fig. 5) records, the spectrum that one the 3rd current spectra desirable leisure point 504 and 508 place (Fig. 5) records, the rest may be inferred.The average spectrum recorded at point 502 and 510 place, to obtain the first current spectra that this current platform rotates.The average spectrum recorded at point 503 and 509 place, to obtain the second current spectra that this current platform rotates.The average spectrum recorded at point 504 and 508 place, to obtain the 3rd current spectra that this current platform rotates.
In some is implemented, the two or more spectrum recorded during this current platform rotates are selected to carry out the current spectra rotated as this current platform.In implementing one, the spectrum as current spectra is selected to be the sample position place person of recording (point 505,506 and 507 place such as, shown in Fig. 5) near this base material center.Not average selected spectrum, and each spectrum selected all is appointed as the current spectra that this current platform rotates.
Calculate each should or difference (step 806) between described current spectra and each reference spectra.This or described reference spectra can as obtained above as described in figure 7B.In implementing one, this difference is the summation of the strength difference in a wave-length coverage.Namely,
Wherein a and b is lower limit and the upper limit of the wave-length coverage of a spectrum respectively, and I current(λ) and I reference(λ) be the intensity of current spectra and the intensity of target optical spectrum of a known wavelength respectively.
A kind of mode calculating the difference between each current spectra and each reference spectra selects each current spectra.For the current spectra that each is selected, contrast each reference spectra and calculate difference.Known current spectra e, f and g, and reference spectra E, F and G, such as, can calculate each and organize now and the difference of the following combination of reference spectra: e and E, e and F, e and G, f and E, f and F, f and G, g and E, g and F and g and G.
In some is implemented, each difference calculated is affixed in a difference picture (step 808).This difference picture is generally the mapping of calculated difference.The every platform of this difference picture rotates and at least upgrades once.(when obtaining multiple spectrum for platform rotation each time, this difference picture can often platform rotate upgrade more than once).
The difference that this difference picture is normally calculated one mapping (minimum difference that the current platform in this instance, calculated rotates).Substitute this minimum difference, another kind of difference, such as, the median of described difference or the next one of minimum difference, can be attached to this figure.
The minimum of a value of taking described difference can improve the accuracy of this terminal point determining processing procedure.Current spectra can comprise the spectrum of the light reflected from the diverse location (such as, line of cut and array) of this base material, and above-mentioned pattern effect can make these spectrum very different.Similarly, this reference spectra can comprise the spectrum of the light reflected from the diverse location of this base material.More inhomogeneous spectrum is not right, and can cause the mistake of terminal point determining.Such as, the current spectra comparing the light reflected from the line of cut of a patterning spectrum and the reference spectra of light reflected from the array of this patterned substrate can make this terminal point determining calculate and produce mistake.This kind compares, metaphor, is to take apple and orange to compare.When only considering the minimum of a value of described difference, the comparison (even if execution) of these types gets rid of outside calculating.Therefore, by the multiple reference spectra of use and multiple current spectra, and only consider the minimum of a value of the difference between each these spectrum, the mistake that may produce because of above-mentioned not right comparison can be avoided.
Optionally, this difference picture can be processed, such as, depart from the calculated difference that previous or multiple calculated difference exceeds a threshold range carry out this difference picture of smoothing by getting rid of.
Judge whether this difference picture drops on the threshold value interior (step 810) of minimum of a value.After detecting minimum of a value, when this difference picture starts the specified threshold being increased beyond this minimum of a value, namely determine terminal.Or, this terminal can be determined based on the slope of this difference picture.In particular, the slope of this difference picture at this difference picture minimum of a value place close to and become 0.When the slope of this difference picture drop on close to 0 slope threshold range in time can determine terminal.
Optionally, application window logic the judgement of step 808 can be promoted.Be suitable for window logic at the United States Patent (USP) of jointly amortizing the 5th, 893,796 and 6,296, in No. 548 describe, it is incorporated herein by the mode quoted at this.
If judge, this difference picture does not reach the threshold range of a minimum of a value, then grinding can continue to carry out, and suitably repeats step 804,806,808 and 810.Otherwise, determine terminal and stop grinding (step 812).
Fig. 8 B marks the method for above-mentioned judgement terminal.Figure 801 is original differences figures.Figure 803 is difference picture of smoothing.Terminal is determined when reaching the threshold value 805 in this minimum of a value 807 when the difference picture 803 of this smoothing.
As using the another kind of one or more reference spectra to select, one or more target optical spectrum can be used in method 800.This difference calculating can be between current spectra and target optical spectrum, and terminal can determine when this difference picture reaches minimum of a value.
Fig. 9 A marks the another kind of method 900 using spectrum based endpoint decision logic to judge the terminal of a grinding steps.Grinding one setting base material also obtains one or more target optical spectrum and reference spectra (step 902).These spectrum can as above obtain with reference to figure 7A and 7B.
Calculate a target difference (step 904).If use a reference spectra, then this target difference is the difference between this reference spectra and this target optical spectrum, and can calculate by above-mentioned difference equation formula.If use two or more reference spectra, then this target difference is the minimum of a value of the difference between described reference spectra and described target optical spectrum, and it utilizes the method for above-mentioned difference equation formula and calculated difference to calculate (that is, step 808).
Start another base material (step 906) grinding this batch of base material.For platform rotation each time performs following steps during grinding.Measure one or more spectrum of the white light reflected from the substrate surface ground, to obtain one or more current spectra (step 908) that a current platform rotates.Calculate the difference (step 910) between this one or more current spectrum and this reference spectra.Calculated difference or described difference (if having more than one current spectra) are attached to a difference picture (step 912).(step 908,910 with 912 respectively to step 804,806 similar with 808).Judge whether this difference picture drops on the threshold range interior (step 914) of this target difference.If judge, this difference picture does not reach the threshold range of this target difference, then grinding can continue to carry out, and suitably repeats step 908,910,912 and 914.Otherwise, determine terminal and stop grinding (step 916).
Fig. 9 B marks the method for above-mentioned judgement terminal.Figure 901 is original differences figures.Figure 903 is difference picture of smoothing.Terminal is determined when the difference picture 903 of this smoothing drops in the threshold range 905 of a target difference 907.
Figure 10 A marks the another kind of method 1000 of judgement one grinding steps terminal.Obtain one or more reference spectra (step 1002).This or described reference spectra as above obtain with reference to figure 7B.
The spectrum collected from the program obtaining this reference spectra is stored in a library of spectra (step 1004).Or this library of spectra can comprise non-through collecting but the spectrum produced by theory.By described spectrum, comprise this reference spectra, pointer, therefore each spectrum all has unique pointer value.Implement this pointer and make described pointer value be sort according to the order recording described spectrum.This pointer, therefore, can get up with time and/or platform rotatable communication.In implementing one, the pointer value putting the first spectrum collected in the very first time can be less than the pointer value of the second spectrum collected at more late time point.This library of spectra can be embodied in the internal memory of the arithmetic unit of this milling apparatus.
Grind a base material from this batch of base material, and be that platform rotates execution following steps each time.Measure the current spectra (step 1006) that one or more spectrum rotates to obtain current platform.Described spectrum as above obtains.Each current spectra and the spectrum be stored in this library of spectra are compared, and determines the library of spectra spectrum (step 1008) of the most applicable any described current spectra.The pointer of the library of spectra spectrum being judged to be the most applicable any described current spectra is attached to an end pointer figure (step 1010).When this terminal figure reach any should or the pointer of described reference spectra time determine terminal (step 1012).
Figure 10 B marks the method for above-mentioned judgement terminal.Figure 1004 is original pointer figures.Figure 1003 is pointer figures of smoothing.Lines 1005 represent the pointer value of this reference spectra.Multiple current spectra can be obtained in the sweeping each time of this optical head below this base material, such as, the spectrum of each radial zone on the base material followed the trail of, and can be each radial zone generation pointer figure.
Figure 11 marks the enforcement judging terminal during a grinding steps.For platform rotates execution following steps each time.Measure multiple original spectrums (step 1102) of the white light reflected from the substrate surface ground.
Each original spectrum recorded of standardization, the light contributed with the medium eliminated beyond interested film reflection (step 1104).Normalized spectral assists their comparison to each other.The light reflection that medium beyond interested film is contributed comprises reflects from this polishing pad window and from the light of the base silicon layer of this base material.Contribution from this window can be estimated by the spectrum measuring the light of this in-situ monitoring system under dark condition received by (that is, when not having base material to be placed in this in-situ monitoring system).Contribution from this silicon layer can be estimated by the spectrum measuring the light reflected from a naked silicon substrate.Light reflection from a naked silicon substrate can obtain before this grinding steps starts.But from the contribution of this window, namely so-called dark contribution, is dynamically obtain, namely, for platform rotation each time obtains, the point 511 of such as Fig. 5.
One original spectrum recorded be following as standardization:
Standardized spectrum=(A-is dark)/(silicon-dark)
Wherein A is this original spectrum, and dark is spectrum acquired under this dark condition, and silicon is the spectrum obtained from this naked silicon substrate.
Optionally, collected spectrum of can classifying based on the region of pattern producing this spectrum, and can be excluded outside endpoint calculation from the spectrum in some region.In particular, the spectrum (step 1106) of the light reflected from line of cut can be considered.The zones of different of one patterned substrate can produce different spectrum (obtaining even if described spectrum is same time point during grinding) usually.Such as, the spectrum of the light reflected from a line of cut is different from the spectrum of the light that the array from this base material reflects.Because its difformity, use the spectrum from two regions of this pattern usually can cause mistake on terminal point determining.But, can be a line of cut group and an array group by described spectral classification based on its shape.Because the variation of the spectrum of line of cut is generally larger, usually can consider that these spectrum are to promote the degree of accuracy.
Step 1106 can be that the another kind of the technology using multiple reference spectra is selected (describing in the step 808 of method 800 above), above-mentionedly compares caused mistake by not right to compensate.Step 1106 can step of replacing 808 or execution outside step 808.
So far have selected the subset of treated spectrum, and in some cases by its average (step 1108).This subset is the spectral composition that the light of being returned by the point reflection from the region on this base material obtains.This region can be, such as, and region 503 or region 507 (Fig. 5).
Optionally, a high-pass filter (high pass filter) is through being applied on this original spectrum recorded (step 1110).The application of high-pass filter generally can remove the average low frequency distortion of spectrum subset.This high-pass filter can be applied on described original spectrum, on it is average, or both described original spectrum and mean value thereof on.
This is average in standardization, to make the amplitude of its amplitude and this reference spectra same or similar (step 1112).The amplitude of one spectrum is the value of crest to trough of this spectrum.Or, standardization this on average to make its reference spectra and this reference spectra also same or similar through standardized reference amplitude.In some is implemented, each spectrum of normalized spectral subset, to make the amplitude of its amplitude and a reference spectra same or similar, or also same or similar through standardized reference amplitude with this reference spectra.
Difference (step 1114) between the average or spectrum of normalized and a reference spectra.This or described reference spectra are as obtained as described in figure 7B above.The above-mentioned equation being used for calculating difference between spectrum is used to carry out calculated difference.
With current difference or the minimum of a value of difference that calculates to upgrade difference picture (step 1116).This difference picture by the standardization calculated average or spectrum and should or described reference spectra between difference show with the function of time (or platform rotation).
The difference picture of this renewal is applied a median wave filter (median filter) and a low pass filter (step 1118).Applying these wave filters usually can this pattern of smoothing (tip by reducing or eliminating in this figure).
Based on upgrade and filter difference picture perform terminal point determining (step 1120).This judgement when reaches minimum of a value based on this difference picture to make.Use above-mentioned window logic to make this judgement.
More at large, the signal processing steps of available step 1104-1112 improves terminal point determining program.Such as, replace generation one difference picture, can come to select spectrum from a library of spectra by described standardization averaged spectrum, to produce a pointer figure, as above with reference to person as described in figure 10A.
Figure 12 marks the standardization of step 1112.As can the person of seeing, only consider the spectrum (or spectrum is average) of a standardization part.The part considered is called a normalized range in this manual, and in addition, can be selected by user.Operative norm becomes 1 and 0 to make the highs and lows in this normalized range be standardized respectively.This standardization be following as calculate:
g=(1-0)/(r max-r min)
h=1-r max*g
N=Rg+h
Wherein g is gain, and h is drift, r maxthe peak in this normalized range, r minbe the minimum in this normalized range, N is normalized spectral, and R is the spectrum before standardization.
Figure 13 marks the smoothing effect using multiple reference spectra to provide.Figure 1302 utilizes single reference spectra to produce (its be one average).Figure 1304 utilizes three reference spectra to produce (as person described in reference diagram 8 above).Figure 1306 utilizes nine reference spectra to produce.As can the person of seeing, figure 1304 be containing the tip fewer than 1302.That is, figure 1304 is more level and smooth than figure 1302.In addition, the concave profile of figure 1304 is clearer than 1306, and this is very important, because be that this depression begins to make endpoint determination logic determine terminal.More clearly cave in and therefore can assist terminal point determining.
Figure 14 marks the method 1200 using spectrum to reach expection substrate profile.Judge the expection terminal time (step 1210) of grinding one product base material.In some is implemented, the judgement of this expection terminal time is with predetermined process parameter grinding one setting base material, judge when this setting base material reaches expection thickness (such as, utilize known offline metrology equipment), and the milling time using this setting base material to reach this expection thickness is come as this expection terminal time.
Start grinding and produce base material (step 1218).Spectrum (step 1226) is obtained in more than one base material radial position place.For each spectral measurement, the radial position on this base material can be judged, and based on its radial position, described spectral measurement can be divided into a few region.One base material can have multiple region, such as central area, zone line and fringe region.On one 300 millimeters of wafers, this central area can extend to radius 50 microns from central authorities, and this zone line can extend to about 100 microns of places from radius 50 microns, and this fringe region can extend to about 150 microns of places from about 100 microns.In some is implemented, this base material has the region more more or less than three regions mentioned.The position obtaining this spectrum can be by, the U.S. patent application case the 10/922nd that such as on August 18th, 2004 files an application, No. 110 " during grinding, determining sensor measurement position ", or as United States Patent (USP) the 7th, 018, No. 271 one depicted decide, and it is incorporated herein by the mode quoted in response to all purposes at this.
By from each region spectrum (or, with regard to each region, the spectrum obtained in this region from this inductor single sweeping on the substrate average) compare with the spectrum in this library of spectra, as above with reference to figure 10A one depicted (step 1234).From to this library of spectra relatively determine the pointer value (step 1238) that each region is corresponding.
Grinding is stopped when the pointer in described region meets one or more endpoint criterion.Such as, when reaching the expection pointer of preselected area, or when any region first reaches expection pointer, or can stop grinding (step 1244) when each region all reaches expection pointer.The expection pointer in each region is judged by the final expection profile of this base material.If base material has flat profile or a uniform oxide layer when wishing that grinding completes, then the spectrum obtained in each region must be identical or approximately identical, and each region has same or analogous expection pointer value.
A backfeed loop can be utilized to adjust the grinding rate in described region, and therefore the final pointer value in each region can be equal with re-set target pointer value.Figure 15 marks this grinding processing procedure of adjustment to reach the method 1400 of expection substrate profile at expection terminal time.Judge the expection pointer value (step 1402) of the expection terminal time in each region on base material.Start grinding (step 1404) and as above this base material of selective monitoring, to judge the pointer figure (step 1406) in each region on this base material.Begin after time delay, it makes this grinding processing procedure settle out together, calculates the rate of change (platform rotate number can be used to represent time) (step 1408) of this pointer according to the time.The rate of change of this pointer can calculate divided by producing the platform rotation number occurred between the spectral measurement of described pointer at described different time with the pointer difference of two different time points merely.The rate of change of this pointer value represents grinding rate.Usually, if do not change any abrasive parameters, can suppose that this grinding rate is stable.
This pointer figure of extrapolation is carried out, to judge the pointer value (step 1412) that relevant range can reach when expecting terminal time by the pointer rate of change in each region.If at this expection terminal time, the pointer value of expection have passed through or has not yet reached, and can adjust this grinding rate (step 1420) according to need up and down.If reach expection pointer value, then without any need for adjustment at this expection terminal time.During this polish process, can exist whether should adjust more than extrapolation once and judgement.Judge whether to need adjustment grinding rate can comprise to judge whether can reach this expection pointer value when this grinding endpoint occurs, or judge that this final pointer drops in the tolerance interval of the final pointer value of distance expection.
In some is implemented, judge the expection terminal time in a region, such as this central area.Then adjust the grinding rate in other region, if desired, with selected areas, such as this central area, expection terminal time reach simultaneously its expection terminal.Grinding rate can be by, such as, increases or reduce this grinding head exerting pressure in respective regions and adjust.In some carrier head, such as, carrier head described in No. 2005-0211377th, U.S. Patent Publication case, this carrier head has adjustable region of exerting pressure.That can suppose the change of grinding rate and pressure changes over direct ratio, such as, and simple Prestonian pattern.In addition, can develop and consider platform or carrier head rotary speed, the quadratic effect of different rotary head force combination, grinding temperature, grind the control model of the described base material of grinding of the impact that slurry stream or other parameter of affecting grinding rate cause.
Also grinding endpoint can be judged with the spectrum based endpoint decision logic described in superincumbent method 800, and can with this grinding processing procedure of adjustment and substrate profile in order to reach expection.Utilize described interregional difference to judge the relative thickness in each region, for above about the equation that step 806 provides.When grinding this base material, obtain spectrum and subregion.Optionally, process and filtration signal are used in this spectrally.Spectrum collected by each region and a predetermined reference spectrally apply difference of two squares summation.Namely this predetermined reference spectra is the spectrum that can obtain when reaching grinding endpoint.
When the minimum of a value of the difference of two squares summation with this reference spectra close to a region, check that the grinding pressure in other region is to determine whether the grinding rate in any region of this change.The grinding rate of the difference of two squares summation that can slow down close to the region of a minimum of a value, and the grinding rate in other region can be increased.Also the difference of two squares summation during can analyzing grinding, with the adjustment of changing grinding rate more in early days in this polish process.Be unlike in person described in method 1400, the method do not need described grinding spectrum and from a library of spectra pointer value between interrelated.
See Figure 16, if expection will have a contoured, such as, on this substrate surface, have uniform thickness, the slope of grinding rate can be monitored, as by pointer value person represented by the change of time, and adjust grinding rate.After stablizing the grinding phase 1505 one, in this central area 1510, this fringe region 1515 and zone line therebetween 1520 obtain spectrum.At this, described region is circular or annular region.Each spectrum and respective pointer are connected and is.During some platforms rotates or repeat this processing procedure during a period of time, and determine the grinding rate of each of central area 1510, zone line 1520 and fringe region 1515.Grinding rate is represented by the slope of the lines of this pointer 1530 (y-axis) acquired by rotation number 1535 (x-axis) mapping.If any one speed seems than the fast of other or slow, then the speed in this region of adjustable.At this, this adjustment is the terminal C based on this central area 1510 e.After the material point or platform of collecting enough current base materials rotate, judge grinding endpoint (the approximate polish end point estimated this central area, EDP), or estimate terminal time (estimated endpoint time, EET).This EET recalculates after platform rotation each time.The first milling time T during this grinding processing procedure 1, the grinding rate of this zone line that slows down, and the grinding rate speeding this fringe region.Do not adjust this zone line 1520 grinding rate, the grinding of this zone line can be faster than the other parts of this base material, and by cross grinding rate M agrinding.Do not adjust the T of this fringe region 1515 1grinding rate, this fringe region 1515 can with E uspeed grinding not enough.
At this grinding processing procedure time point (T subsequently 2), again can adjust speed, words if desired.The target of this grinding processing procedure is when this base material has a flat surfaces, or the suitable mean time of the oxide layer on this surface stops grinding.Judge that a kind of method of grinding rate adjustment amount is adjustment speed, estimating that grinding endpoint EDP place is equal with the pointer of each of Shi Gai center, centre and fringe region.Therefore, need the grinding rate adjusting this fringe region, this center and zone line then with at T 2phase same rate grinding before.This EDP is determined when the ASL horizontal line of the line of best fit bar contact expection of this central area.Control other regions all to make its line of best fit bar close as far as possible, with crossing with this ASL horizontal line at same time point.
Utilize the spectrum substrate of grinding rate to monitor be grinding one first base material to reach the another kind of method of contoured and monitor grinding rate, and the grinding rate information that feedovers is to the base material ground subsequently.See Figure 17, grinding one first setting base material also obtains spectrum, to judge this center 1610, middle 1620 and the grinding rate in region, edge 1630 and relative oxide thickness.The head pointer in this centre 1620, center 1610 and region, edge 1630 is M respectively o, C oand E o.This central area 1610 has the terminal C through selecting as target optical spectrum espectrum.If when the grinding of current wafer stops, the pointer value in another two regions is apart from this center terminal C epointer threshold distance 1640 in, then can not adjust the edge 1630 of next wafer or the grinding rate in middle 1620 regions.Same, if the grinding rate during grinding and pointer value are can accept in limit 1650, then not need to adjust this edge 1630 or middle 1620 regions.At this, when grinding termination, this zone line M eterminal demonstrate this zone line and crossed and ground, and this fringe region E eterminal then to demonstrate the grinding of this fringe region not enough.Accordingly, can be wafer adjustment grinding rate parameter subsequently, and the end point thickness of all regions E, M, C is all dropped in tolerance interval 1640.Figure 18 marks the expection signal development in E, M and C region of next wafer.
See Figure 18, during this grinding processing procedure, when using original position adjustment, expection only changes grinding rate several times, such as, and four times, three times, twice or only once.Can adjust when maybe processing procedure being ground in end close to time when starting, in centre.Described spectrum and pointer value are connected and produces the linear ratio of grinding in each region comparatively, and judgement can be simplified how to control this calculating needed for grinding processing procedure, and the complicated software of removing or fabrication steps.
The spectrum obtained from base material zones of different can indicate the profile of this base material, but might not provide the absolute thickness of this oxide layer.Therefore, some spectrum substrate grinding rate method of adjustment described herein can be used to the relative thickness of the oxide layer monitored on this base material.Because described spectrum FLOOR method can be used to the grinding rate judging and adjust on this base material in each region, described spectrum FLOOR method also can compensate the following one by one thickness variation of this base material, and the grinding carried out in the Nonuniform Domain Simulation of Reservoir of wafer.
As person shown here, expection substrate profile can be reached with this relative thickness.Above some in example, the expection substrate profile after grinding is a flat profile.But, also can reach other profile except smooth.Usually, a base material grinds on more than one platform.Some grinding processing procedure known natively can grind a region with the speed faster than another region.For compensating this non-homogeneous grinding, can be controlled in the grinding on one first platform, to make another region of the Thickness Ratio in a region thick, such as can with the region of fast speed grinding on next platform.This difference in thickness can by the difference of select target pointer value or a region relative to another region end pointer value between ratio reach.
Embodiments of the invention described in this description and all feature operations all can be implemented in Fundamental Digital Circuit, or implement in computer software, firmware or hardware, comprise the structure tool and structural equivalents thereof that disclose in this manual, or its composition.Embodiments of the invention can be embodied as one or more computer program, namely, one or more is embodied in the computer program in an information carrier, such as, in a machine readable storage device or in a propagation signal, to be performed by data processing equipment, or the operation of control data treatment facility, such as, a programmable processor, a computer or multiple processor or computer.One computer program (also referred to as program, software, software application or instruction code) can be write the program language of any type, comprise compiling or literal translation language, and can dispose in any form, comprise independent performing a programme or a module, assembly, subroutine or other be useful in unit in computer environment.One computer program might not corresponding to archives.One program can be stored in a part for the archives possessing other program or data, in single archives of exclusive discussed program, or (archives of the program code of one or more module, subprogram or a part such as, are stored) in multiple coordination archives.One computer program can through dispose with a computer or same address or be distributed in multiple address and by one communication network connect multiple computers on perform.
Processing procedure described in this description and logic flow can be performed one or more computer program to perform by one or more programmable processor, to produce output carry out n-back test by computing input data.Described processing procedure and logic flow also can be performed by special purpose logic circuitry, and equipment also can be implemented as special purpose logic circuitry, such as FPGA (field programmable gate array) or ASIC (ASIC).
Above-mentioned milling apparatus and method can be applicable in multiple grinding system.This grinding pad, or this carrier head, or both are all removable, to provide the relative motion between this lapped face and this base material.Such as, this platform can be non-rotating around orbital motion.This grinding pad can be fixing circle (or other shape) grinding pad on the platform.Some viewpoint of this endpoint detection system can be applicable on linear grinding system, such as, when this grinding pad is continous way or the take-up belt of rectilinear movement.This grinding layer can be a standard (such as, being with or without the polyurethane of inserts) grinding-material, a soft material or a bonded-abrasive material.Use the words such as relative position; Should be appreciated that this lapped face and base material can be remained on Vertical dimension position or some other to position.
Specific embodiment of the present invention had been described.Other embodiment is in the scope of claim.Such as, different order can perform the action described in described claim, and still can reach expected results.

Claims (40)

1. a computer implemented method, it at least comprises:
Store at least one standardized predetermined spectrum;
A series of current spectra is obtained from the base material ground;
Each current spectra in this series of standardization, to produce series of standards current spectra; And
This at least one standardized predetermined spectrum and described normalized current spectra is utilized to judge a grinding endpoint.
2. the method for claim 1, the outermost layer of wherein said base material is polished, and standardization comprises the spectrum divided by the lower floor below this outermost layer.
3. method as claimed in claim 2, wherein this lower floor is silicon layer.
4. the method as described in any one in Claim 1-3, wherein standardization comprises the spectrum inductor that deducts and represent original position optical monitoring system not having base material.
5. method as claimed in claim 4, wherein standardization comprises calculating (ADark)/(Si-Dark), wherein A is current spectra, and Dark is the spectrum obtained when not having base material to be placed in this in-situ monitoring system, and Si is the spectrum obtained from naked silicon substrate.
6. a computer actuating unit, it at least comprises:
Store the device of at least one standardized predetermined spectrum;
The device of a series of current spectra is obtained from the base material ground;
Each current spectra in this series of standardization, to produce the device of series of standards current spectra; And
This at least one standardized predetermined spectrum and described normalized current spectra is utilized to judge the device of a grinding endpoint.
7. device as claimed in claim 6, the outermost layer of wherein said base material is polished, and standardization comprises the spectrum divided by the lower floor below this outermost layer.
8. device as claimed in claim 7, wherein this lower floor is silicon layer.
9. the device as described in any one in claim 6 to 8, wherein standardization comprises the spectrum inductor that deducts and represent original position optical monitoring system not having base material.
10. device as claimed in claim 9, wherein standardization comprises calculating (ADark)/(Si-Dark), wherein A is current spectra, and Dark is the spectrum obtained when not having base material to be placed in this in-situ monitoring system, and Si is the spectrum obtained from naked silicon substrate.
11. 1 kinds of computer implemented methods, comprising:
Store at least one reference spectra;
A series of current spectra is obtained from the base material ground;
Each current spectra in this series of standardization, to produce series of standards current spectra, to make the amplitude of the amplitude of each current spectra and described reference spectra same or similar; And
Utilize this at least one reference spectra and described standardized current spectra to judge grinding endpoint.
12. methods as claimed in claim 11, wherein this amplitude comprises the crest of spectrum to trough strength difference.
13. methods as claimed in claim 11, comprise further: the scope receiving a part for instruction spectrum, and the normalized current spectra of this series makes the amplitude of the amplitude of each current spectra within the scope of this and the reference spectra within the scope of this same or similar.
14. methods as claimed in claim 13, wherein standardization makes to be standardized to 1 and 0. respectively from the highs and lows in this scope of each normalized spectral
15. methods as claimed in claim 14, wherein standardization comprises calculating g=(1-0)/(r max-r min), calculate h=1-r maxg, and calculate N=R g+ h, wherein g is gain, and h is drift, r maxbe this current spectra this within the scope of peak, r minbe this current spectra this within the scope of minimum, R is this current spectra, and N is normalized spectral.
16. 1 kinds of computer actuating units, comprising:
Store the device of at least one reference spectra;
The device of a series of current spectra is obtained from the base material ground;
Each current spectra in this series of standardization, to produce series of standards current spectra, to make the same or analogous device of the amplitude of the amplitude of each current spectra and described reference spectra; And
Utilize this at least one reference spectra and described standardized current spectra to judge the device of grinding endpoint.
17. devices as claimed in claim 16, wherein this amplitude comprises the device of crest to trough strength difference of spectrum.
18. devices as claimed in claim 17, comprise further: the device receiving the scope of a part for instruction spectrum, and the normalized current spectra of this series makes the amplitude of the amplitude of each current spectra within the scope of this and the reference spectra within the scope of this same or similar.
19. devices as claimed in claim 18, wherein standardized device makes to be standardized to 1 and 0. respectively from the highs and lows in this scope of each normalized spectral
20. devices as claimed in claim 19, wherein standardized device comprises calculating g=(1-0)/(r max-r min), calculate h=1-r maxg, and calculate N=R gthe device of+h, wherein g is gain, and h is drift, r maxbe this current spectra this within the scope of peak, r minbe this current spectra this within the scope of minimum, R is this current spectra, and N is normalized spectral.
21. 1 kinds of rinse-systems being used for flushing one polishing pad window lower surface, this system at least comprises:
One gas source, configuration provides an air-flow;
One conveying spray orifice; And
One pipeline, it connects this gas source to this conveying spray orifice, and wherein this gas source and this conveying spray orifice are configured to guide bottom an air-flow to this polishing pad window, and wherein prevent coagulation to be formed on the lower surface of this polishing pad window.
22. rinse-systems as claimed in claim 21, more comprise:
One vacuum source, configuration provides vacuum;
One vacuum nozzle; And
One vacuum line, it connects this vacuum source to this vacuum nozzle.
23. rinse-systems as claimed in claim 22, wherein:
This gas source is the gas being configured to provide a specified quantitative, and this vacuum source is the gas being configured to aspirate same or similar amount.
24. rinse-systems as claimed in claim 21, wherein:
This gas is the dry gas cleaned or a nitrogen.
25. rinse-systems as claimed in claim 21, more comprise:
Be used for carrying a rotary coupler of gas, this rotary coupler is arranged in this pipeline.
26. 1 kinds of assemblies for cmp, it at least comprises:
One grinding pad, has a lapped face; And
One firm window, be arranged in this grinding pad to provide the optical nearing by this grinding pad, this firm window comprises the Part I formed by plastics and the Part II formed by crystallization or glass-like materials, the lapped face copline of the surface of this Part I and this grinding pad, this Part I and this Part II adjoin along non-planar interface.
27. assemblies as claimed in claim 26, wherein:
This grinding pad has the service life of an expection; And
The Part I of this window has a thickness and makes, and during the expected service life of this grinding pad, this Part I can not be depleted and expose this Part II.
28. assemblies as described in claim 26 or 27, the interface wherein between this first and second part is rough surface.
29. assemblies as described in claim 26 or 27, wherein this Part I extends around the side of this Part II.
30. assemblies as described in claim 26 or 27, wherein this Part I comprises at least one ridge entering this Part II.
31. 1 kinds, for monitoring the computer implemented method of grinding technics, comprising:
Store reference spectra, the spectrum that described reference spectra represents reflection from white light self-reference base material and obtains;
For the sweeping each time of the repeatedly sweeping of the optical pickocff on the base material ground, obtain multiple spectrum recorded, each spectrum recorded in multiple spectrum recorded of sweeping is each time the spectrum obtained from the reflection of the base material ground from white light;
For the sweeping each time of described repeatedly sweeping, determine difference between each spectrum recorded in the multiple spectrum recorded obtained in described sweeping and reference spectra to generate multiple difference for sweeping each time;
For the sweeping each time of described repeatedly sweeping, based on described multiple difference amplitude between comparison from multiple differences of described sweeping, select a difference, therefore generate a series of selected difference; And
Series based on selected difference is determined to grind end points.
32. 1 kinds, for monitoring the computer implemented method of grinding technics, comprising:
Store multiple reference spectra, each reference spectra in described multiple reference spectra represents reflection from white light self-reference base material and the spectrum obtained;
For the sweeping each time of the repeatedly sweeping of the optical pickocff on the base material ground, obtain the spectrum recorded, described in the spectrum that records be the spectrum obtained from the reflection of the base material ground from white light;
For the sweeping each time of described repeatedly sweeping, the difference between each reference spectra in the spectrum recorded described in determining and described multiple reference spectra is to generate multiple difference for sweeping each time;
For the sweeping each time of described repeatedly sweeping, based on described multiple difference amplitude between comparison from multiple differences of described sweeping, select a difference, therefore generate a series of selected difference; And
Series based on selected difference is determined to grind end points.
33. methods as described in claim 31 or 32, it is characterized in that, from multiple differences of described sweeping, select a difference to comprise: from described multiple difference, select minimum difference, select closest to minimum difference from described multiple difference or select median difference from described multiple difference.
34. methods as described in claim 31 or 32, it is characterized in that, determine that the difference between each spectrum recorded in multiple spectrum recorded and reference spectra comprises: or the summation of the difference of two squares of the summation of the absolute difference of intensity in the wave-length coverage calculating between current spectra and described reference spectra or the intensity in calculating between current spectra and described reference spectra wave-length coverage.
35. methods as claimed in claim 31, also comprise: store the multiple reference spectra comprising described reference spectra, and for the sweeping each time of described repeatedly sweeping, determine difference between each spectrum recorded in the described multiple spectrum recorded obtained in described sweeping and each reference spectra in described multiple reference spectra to generate multiple difference for sweeping each time.
36. 1 kinds, for monitoring the computer actuating unit of grinding technics, comprising:
Store the device of reference spectra, the spectrum that described reference spectra represents reflection from white light self-reference base material and obtains;
For the sweeping each time of the repeatedly sweeping of the optical pickocff on the base material ground, obtain the device of multiple spectrum recorded, each spectrum recorded in multiple spectrum recorded of sweeping is each time the spectrum obtained from the reflection of the base material ground from white light;
For the sweeping each time of described repeatedly sweeping, determine difference between each spectrum recorded in the multiple spectrum recorded obtained in described sweeping and reference spectra to generate the device of multiple difference for sweeping each time;
For the sweeping each time of described repeatedly sweeping, based on described multiple difference amplitude between comparison from multiple differences of described sweeping, select a difference, therefore generate the device of a series of selected difference; And
Series based on selected difference determines the device grinding end points.
37. 1 kinds, for monitoring the computer actuating unit of grinding technics, comprising:
Store the device of multiple reference spectra, each reference spectra in described multiple reference spectra represents reflection from white light self-reference base material and the spectrum obtained;
For the sweeping each time of the repeatedly sweeping of the optical pickocff on the base material ground, obtain the device of the spectrum recorded, described in the spectrum that records be the spectrum obtained from the reflection of the base material ground from white light;
For the sweeping each time of described repeatedly sweeping, the difference between each reference spectra in the spectrum recorded described in determining and described multiple reference spectra is to generate the device of multiple difference for sweeping each time;
For the sweeping each time of described repeatedly sweeping, based on described multiple difference amplitude between comparison from multiple differences of described sweeping, select a difference, therefore generate the device of a series of selected difference; And
Series based on selected difference determines the device grinding end points.
38. devices as described in claim 36 or 37, it is characterized in that, from multiple differences of described sweeping, select the device of a difference to comprise: from described multiple difference, select the device of minimum difference, from described multiple difference, select the device of closest minimum difference or from described multiple difference, select the device of median difference.
39. devices as described in claim 36 or 37, it is characterized in that, determine that the device of the difference between each spectrum recorded in multiple spectrum recorded and reference spectra comprises: or the device of the summation of the difference of two squares of the device of the summation of the absolute difference of intensity in the wave-length coverage calculating between current spectra and described reference spectra or the intensity in calculating between current spectra and described reference spectra wave-length coverage.
40. devices as claimed in claim 36, also comprise: store the device comprising multiple reference spectra of described reference spectra, and for the sweeping each time of described repeatedly sweeping, determine difference between each spectrum recorded in the described multiple spectrum recorded obtained in described sweeping and each reference spectra in described multiple reference spectra to generate the device of multiple difference for sweeping each time.
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US71068205P 2005-08-22 2005-08-22
US60/710,682 2005-08-22
US11/213,344 2005-08-26
US11/213,675 US7306507B2 (en) 2005-08-22 2005-08-26 Polishing pad assembly with glass or crystalline window
US11/213,675 2005-08-26
US11/213,344 US7764377B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/213,674 2005-08-26
US11/213,674 US7226339B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/261,742 US7406394B2 (en) 2005-08-22 2005-10-28 Spectra based endpointing for chemical mechanical polishing
US11/261,742 2005-10-28
US74776806P 2006-05-19 2006-05-19
US60/747,768 2006-05-19
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112025547A (en) * 2020-09-15 2020-12-04 泉芯集成电路制造(济南)有限公司 Laser projection virtual correction device and method

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101643992B1 (en) * 2007-02-23 2016-07-29 어플라이드 머티어리얼스, 인코포레이티드 Using spectra to determine polishing endpoints
JP5968783B2 (en) * 2009-11-03 2016-08-10 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated End point method using the relationship between peak position and time in spectral contour plots
US9579767B2 (en) 2010-04-28 2017-02-28 Applied Materials, Inc. Automatic generation of reference spectra for optical monitoring of substrates
TWI496661B (en) * 2010-04-28 2015-08-21 Applied Materials Inc Automatic generation of reference spectra for optical monitoring
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
KR101981814B1 (en) * 2011-04-28 2019-05-23 어플라이드 머티어리얼스, 인코포레이티드 Generating model based spectra library for polishing
US10012494B2 (en) 2013-10-25 2018-07-03 Applied Materials, Inc. Grouping spectral data from polishing substrates
US9997420B2 (en) 2013-12-27 2018-06-12 Taiwan Semiconductor Manufacturing Company Limited Method and/or system for chemical mechanical planarization (CMP)
US9352440B2 (en) * 2014-04-30 2016-05-31 Applied Materials, Inc. Serial feature tracking for endpoint detection
CN107107304A (en) * 2014-12-12 2017-08-29 应用材料公司 Accessory substance in situ during for CMP is removed and platen is cooled down system and technique
CN104802091A (en) * 2015-05-19 2015-07-29 肥西县三星玻璃有限公司 Glass edging machine
JP2017064899A (en) * 2015-10-01 2017-04-06 株式会社荏原製作所 Polishing device
KR101870701B1 (en) 2016-08-01 2018-06-25 에스케이실트론 주식회사 Polishing measuring apparatus and method for controlling polishing time thereof, and pllishing control system including the same
US10286517B2 (en) * 2017-08-08 2019-05-14 Micron Technology, Inc. Polishing apparatuses
CN107520740A (en) * 2017-09-18 2017-12-29 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) The detection method of optical spectrum end-point, apparatus and system in a kind of chemically mechanical polishing
KR101890331B1 (en) * 2017-10-16 2018-08-21 에스케이씨 주식회사 Polishing pad protected leakage and manufecturing method thereof
CN107900788B (en) * 2017-11-24 2020-04-24 上海华力微电子有限公司 Method for improving thickness stability of interlayer medium grinding process
KR102527659B1 (en) 2017-11-27 2023-05-03 삼성전자주식회사 Air cleaner
KR20210052559A (en) * 2018-09-24 2021-05-10 어플라이드 머티어리얼스, 인코포레이티드 Machine vision as input to the CMP process control algorithm
WO2021262450A1 (en) * 2020-06-24 2021-12-30 Applied Materials, Inc. Determination of substrate layer thickness with polishing pad wear compensation
CN113478382B (en) * 2021-07-20 2022-11-04 湖北鼎汇微电子材料有限公司 Detection window, chemical mechanical polishing pad and polishing system

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286128U (en) * 1988-12-21 1990-07-09
JP3300217B2 (en) * 1996-01-29 2002-07-08 大日本スクリーン製造株式会社 Polishing process monitoring method and apparatus
JP3327175B2 (en) * 1997-07-18 2002-09-24 株式会社ニコン Detection unit and wafer polishing apparatus provided with the detection unit
JP4460659B2 (en) * 1997-10-22 2010-05-12 株式会社ルネサステクノロジ Thin film thickness measuring method and apparatus, thin film device manufacturing method and apparatus using the same
JP3371775B2 (en) * 1997-10-31 2003-01-27 株式会社日立製作所 Polishing method
US6124141A (en) * 1998-01-07 2000-09-26 International Business Machines Corporation Non-destructive method and device for measuring the depth of a buried interface
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
JP3395663B2 (en) * 1998-09-03 2003-04-14 株式会社ニコン Detection method and detection device, polishing device and polishing method
US6361646B1 (en) * 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6296189B1 (en) * 1998-08-26 2001-10-02 Spectra Science Corporation. Methods and apparatus employing multi-spectral imaging for the remote identification and sorting of objects
JP2000254860A (en) * 1999-03-08 2000-09-19 Nikon Corp Polishing device
CN1150601C (en) * 1999-03-31 2004-05-19 株式会社尼康 Polishing body, polisher, method for adjusting polisher, method for measuring thickness of polished film or end point of polishing, method for producing semiconductor device
JP2000310512A (en) * 1999-04-28 2000-11-07 Hitachi Ltd Method and device for measuring film thickness of thin film and method and device for manufacturing thin film device using the same
US6334807B1 (en) * 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
JP3327289B2 (en) 2000-03-29 2002-09-24 株式会社ニコン Process end point measuring device, measuring method, polishing device, semiconductor device manufacturing method, and recording medium recording signal processing program
US6146242A (en) * 1999-06-11 2000-11-14 Strasbaugh, Inc. Optical view port for chemical mechanical planarization endpoint detection
US6171181B1 (en) * 1999-08-17 2001-01-09 Rodel Holdings, Inc. Molded polishing pad having integral window
JP3259225B2 (en) * 1999-12-27 2002-02-25 株式会社ニコン Polishing status monitoring method and apparatus, polishing apparatus, process wafer, semiconductor device manufacturing method, and semiconductor device
JP4487375B2 (en) * 2000-03-30 2010-06-23 株式会社ニコン Pattern modeling method, film thickness measuring method, process state determining method, film thickness measuring apparatus, process state determining apparatus, polishing apparatus, and semiconductor device manufacturing method
JP2001287159A (en) * 2000-04-05 2001-10-16 Nikon Corp Surface condition measuring method and measuring device, polishing machine, and semiconductor device manufacturing method
JP2002116163A (en) * 2000-10-05 2002-04-19 Jeol Ltd Spectrum peak position correcting method for surface analyzing instrument
JP3804064B2 (en) * 2001-12-04 2006-08-02 株式会社東京精密 Polishing end point detection method and apparatus for wafer polishing apparatus
JP2002025960A (en) * 2000-12-28 2002-01-25 Wallace T Y Tang Method and apparatus for monitoring thin film
US6491569B2 (en) * 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
US6676482B2 (en) * 2001-04-20 2004-01-13 Speedfam-Ipec Corporation Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
JP2002359217A (en) * 2001-05-31 2002-12-13 Omron Corp Method and device for detecting polishing end point
JP3932836B2 (en) * 2001-07-27 2007-06-20 株式会社日立製作所 Thin film thickness measuring method and apparatus, and device manufacturing method using the same
US6618130B2 (en) 2001-08-28 2003-09-09 Speedfam-Ipec Corporation Method and apparatus for optical endpoint detection during chemical mechanical polishing
JP2003080451A (en) * 2001-09-07 2003-03-18 Tokyo Seimitsu Co Ltd Polishing device and polishing method
US6688945B2 (en) * 2002-03-25 2004-02-10 Macronix International Co. Ltd. CMP endpoint detection system
JP2004012302A (en) * 2002-06-07 2004-01-15 Hitachi Ltd Method and instrument for measuring film thickness distribution
JP2004017229A (en) * 2002-06-18 2004-01-22 Shimadzu Corp Substrate polishing device
JP4542324B2 (en) * 2002-10-17 2010-09-15 株式会社荏原製作所 Polishing state monitoring device and polishing device
JP2004165473A (en) * 2002-11-14 2004-06-10 Seiko Epson Corp Cmp device, cmp method, semiconductor device and its manufacturing method
US6931870B2 (en) * 2002-12-04 2005-08-23 Samsung Electronics Co., Ltd. Time division multi-cycle type cooling apparatus and method for controlling the same
JP2004343090A (en) * 2003-04-22 2004-12-02 Jsr Corp Polishing pad and method for polishing semiconductor wafer
US20040242121A1 (en) * 2003-05-16 2004-12-02 Kazuto Hirokawa Substrate polishing apparatus
JP2005011977A (en) * 2003-06-18 2005-01-13 Ebara Corp Device and method for substrate polishing
JP2005033012A (en) * 2003-07-14 2005-02-03 Seiko Epson Corp Polishing apparatus, and semiconductor device manufacturing method
US20050026542A1 (en) 2003-07-31 2005-02-03 Tezer Battal Detection system for chemical-mechanical planarization tool
JP4464642B2 (en) 2003-09-10 2010-05-19 株式会社荏原製作所 Polishing state monitoring apparatus, polishing state monitoring method, polishing apparatus, and polishing method
JP2005101114A (en) * 2003-09-22 2005-04-14 Lam Res Corp In-situ detection of border of metal thin film state using optical interference through dynamic update reference
TW200524803A (en) * 2003-11-13 2005-08-01 Applied Materials Inc Stabilizing substrate carriers during overhead transport

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112025547A (en) * 2020-09-15 2020-12-04 泉芯集成电路制造(济南)有限公司 Laser projection virtual correction device and method

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