CN104518076A - Light emitting module and application thereof - Google Patents
Light emitting module and application thereof Download PDFInfo
- Publication number
- CN104518076A CN104518076A CN201310532714.2A CN201310532714A CN104518076A CN 104518076 A CN104518076 A CN 104518076A CN 201310532714 A CN201310532714 A CN 201310532714A CN 104518076 A CN104518076 A CN 104518076A
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- China
- Prior art keywords
- light emitting
- light
- protective layer
- emitting module
- conductive part
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- 239000011241 protective layer Substances 0.000 claims abstract description 72
- 238000004806 packaging method and process Methods 0.000 claims abstract description 49
- 229920003023 plastic Polymers 0.000 claims description 83
- 239000004033 plastic Substances 0.000 claims description 83
- 239000002245 particle Substances 0.000 claims description 48
- 229920001169 thermoplastic Polymers 0.000 claims description 42
- 239000004568 cement Substances 0.000 claims description 38
- -1 polyethylene Polymers 0.000 claims description 38
- 239000004416 thermosoftening plastic Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 32
- 238000002844 melting Methods 0.000 claims description 28
- 230000008018 melting Effects 0.000 claims description 28
- 239000006071 cream Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000005538 encapsulation Methods 0.000 claims description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 19
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 16
- 239000004677 Nylon Substances 0.000 claims description 14
- 239000004698 Polyethylene Substances 0.000 claims description 14
- 239000004743 Polypropylene Substances 0.000 claims description 14
- 229920001778 nylon Polymers 0.000 claims description 14
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 14
- 229920000573 polyethylene Polymers 0.000 claims description 14
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 14
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 14
- 229920001155 polypropylene Polymers 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 6
- 239000004408 titanium dioxide Substances 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- 239000003292 glue Substances 0.000 abstract 2
- 239000007788 liquid Substances 0.000 description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 241000218202 Coptis Species 0.000 description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 description 5
- 230000003139 buffering effect Effects 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical class OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a light-emitting module which comprises a first lead frame, a packaging cup body, a first light-emitting diode, a first lead, a second lead, a first protective layer, a second protective layer and packaging glue. The first lead frame comprises a first conductive part and a second conductive part which are separated from each other, and the second conductive part is provided with a preset die bonding area. The packaging cup body covers part of the first lead frame and forms a concave hole exposing the surface of the die bonding area. The front surface of the first light emitting diode is provided with a first electrode and a second electrode which are separated from each other, and the back surface of the first light emitting diode is fixed on the die bonding area. The first conducting wire is electrically connected between the first conducting part and the first electrode. The second conducting wire is electrically connected between the second conducting part and the second electrode. The first and second protective layers respectively cover the first and second wires. The packaging glue is filled in the concave hole.
Description
Technical field
The invention relates to a kind of light emitting module.
Background technology
Generally speaking, in the encapsulation procedure of light-emitting diode assembly, gold thread can be used to be electrically connected between light-emitting diode chip for backlight unit and lead frame, again packaging plastic to be inserted lead frame afterwards, the wherein coated gold thread of packaging plastic, to complete the processing procedure of light-emitting diode assembly.But in the middle of the manufacturing process or operating process afterwards of light-emitting diode assembly, packaging plastic can produce internal stress when high/low temperature change procedure, and then cause the gold thread stress be in contact with it to be pullled and produce distortion or sealing-off, can broken string be produced what is more, light-emitting diode assembly was lost efficacy.Although the routing processing procedure that this problem can pass through different bank improves, because elongating gold thread, the use amount of gold thread being promoted, can production cost be increased on the contrary.
Summary of the invention
An aspect of the present invention provides a kind of light emitting module, comprises the first lead frame, encapsulation cup, the first light-emitting diode, the first wire, the second wire, the first protective layer, the second protective layer and packaging plastic.First lead frame comprises the first conductive part separated from one another and the second conductive part, and the second conductive part has predetermined crystal bonding area.Encapsulation cup coated part first lead frame, and formation exposes predetermined crystal bonding area depression in the surface hole.First light-emitting diode has a front and relative to the back side in front.Front has the first electrode separated from one another and the second electrode, the back side of the first light-emitting diode is then bonded on crystal bonding area.First wire is electrically connected between the first conductive part and the first electrode.Second wire is electrically connected between the second conductive part and the second electrode.First, second protective layer is first, second wire coated respectively.Packaging plastic is inserted and is placed in depression hole, and covers the first light-emitting diode and by coated first, second wire of first, second protective layer.
In one or more execution mode, first, second protective layer is thermoplastics type's plastic cement.
In one or more execution mode, the material of thermoplastics type's plastic cement is Merlon (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), poly terephthalic acid Isosorbide-5-Nitrae cyclohexanedimethanol ester (PCT), polypropylene (PP), nylon (Nylon) one of them or its combination.
In one or more execution mode, in thermoplastics type's plastic cement, more comprise multiple scattering particles.
In one or more execution mode, the material of scattering particles is titanium dioxide (TiO
2), silicon dioxide (SiO
2), zinc oxide (ZnO), aluminium oxide (Al
2o
3) one of them or its combination.
In one or more execution mode, in packaging plastic and/or thermoplastics type's plastic cement, more comprise multiple wavelength convert particle.
Another aspect of the present invention provides a kind of light-emitting device, comprises substrate, above-mentioned light emitting module and tin cream.Tin cream makes light emitting module be fixed on substrate via reflow mode.The melting temperature of tin cream is higher than the melting temperature of first, second protective layer.
An aspect more of the present invention provides a kind of light emitting module, comprises the second lead frame, encapsulation cup, the second light-emitting diode, privates, the 3rd protective layer and packaging plastic.Second lead frame comprises the 3rd conductive part separated from one another and the 4th conductive part, and the 4th conductive part has predetermined crystal bonding area.Encapsulation cup coated part second lead frame, and formation exposes predetermined crystal bonding area depression in the surface hole.Second light-emitting diode has a front and relative to the back side in this front.Front has third electrode, and the back side has the 4th electrode, and the back side of the second light-emitting diode is then bonded on crystal bonding area, and the 4th electrode and the 4th conductive part are electrically connected.Privates is electrically connected at the 3rd between conductive part and third electrode.The coated privates of 3rd protective layer.Packaging plastic is inserted and is placed in depression hole, and covers the second light-emitting diode and by the coated privates of the 3rd protective layer.
In one or more execution mode, the 3rd protective layer is thermoplastics type's plastic cement.
In one or more execution mode, the material of thermoplastics type's plastic cement is Merlon (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), poly terephthalic acid Isosorbide-5-Nitrae cyclohexanedimethanol ester (PCT), polypropylene (PP), nylon (Nylon) one of them or its combination.
In one or more execution mode, in thermoplastics type's plastic cement, more comprise multiple scattering particles.
In one or more execution mode, the material of scattering particles is titanium dioxide (TiO
2), silicon dioxide (SiO
2), zinc oxide (ZnO), aluminium oxide (Al
2o
3) one of them or its combination.
In one or more execution mode, in packaging plastic and/or thermoplastics type's plastic cement, more comprise multiple wavelength convert particle.
Another aspect of the present invention provides a kind of light-emitting device, comprises substrate, above-mentioned light emitting module and tin cream.Tin cream makes light emitting module be fixed on substrate via reflow mode.The melting temperature of tin cream is higher than the melting temperature of the 3rd protective layer.
Because of above-mentioned protective layer coated wire; even if therefore when packaging plastic is in high/low temperature change and produces internal stress; protective layer also can help to absorb the stress of packaging plastic, namely becomes the buffering between packaging plastic and wire, to reduce the probability that wire produces distortion, sealing-off or broken string.
Accompanying drawing explanation
Fig. 1 illustrates the profile of the light emitting module of an embodiment of the present invention.
Fig. 2 illustrates the profile of the light-emitting device of an embodiment of the present invention.
Fig. 3 illustrates the profile of the light emitting module of another execution mode of the present invention.
Fig. 4 illustrates the profile of the light-emitting device of another execution mode of the present invention.
Wherein, Reference numeral:
100,400: light emitting module
110: the first lead frames
114: the second conductive parts
122,422: depression hole
132: the first electrodes
136,436: front
140: the first wires
160: the first protective layers
170: the second protective layers
182,482: wavelength convert particle
300: tin cream
412: the three conductive parts
430: the second light-emitting diodes
434: the four electrodes
460: the three protective layers
102,402: exiting surface
112: the first conductive parts
120,420: encapsulation cup
130: the first light-emitting diodes
134: the second electrodes
138,438: the back side
150: the second wires
162,462: scattering particles
180,480: packaging plastic
200: substrate
410: the second lead frames
414: the four conductive parts
432: third electrode
440: privates
I: crystal bonding area
Embodiment
Below will disclose multiple execution mode of the present invention with accompanying drawing, as clearly stated, the details in many practices will be explained in the following description.But should be appreciated that, the details in these practices is not applied to limit the present invention.That is, in some embodiments of the present invention, the details in these practices is non-essential.In addition, for simplifying for the purpose of accompanying drawing, some known usual structures and element illustrate it by the mode simply illustrated in the drawings.
Fig. 1 illustrates the profile of the light emitting module 100 of an embodiment of the present invention.Light emitting module 100 comprises the first lead frame 110, encapsulation cup 120, first light-emitting diode 130, first wire 140, second wire 150, first protective layer 160, second protective layer 170 and packaging plastic 180.First lead frame 110 comprises the first conductive part 112 and the second conductive part 114 separated from one another, and the second conductive part 114 has predetermined crystal bonding area I.Encapsulation cup 120 coated part first lead frame 110, and formation exposes predetermined crystal bonding area I depression in the surface hole 122.First light-emitting diode 130 has a front 136 and relative to the back side 138 in front 136.The back side 138 front 136 with the first electrode 132 separated from one another and the second electrode 134, first light-emitting diode 130 is then bonded on the I of crystal bonding area.In other words, the first light-emitting diode 130 is a horizontal light emitting diode (Face up chip).First wire 140 is electrically connected between the first conductive part 112 and the first electrode 132.Second wire 150 is electrically connected between the second conductive part 114 and the second electrode 134.First protective layer 160 and the second protective layer 170 coated first wire 140 and the second wire 150 respectively.Packaging plastic 180 is inserted and is placed in depression hole 122, and covers the first light-emitting diode 130 and by the first protective layer 160 and coated the first wire 140 and the second wire 150 of the second protective layer 170.
In the present embodiment, the first protective layer 160 and the second protective layer 170 coated first wire 140 and the second wire 150 respectively, that is, at least the first wire 140 of part does not directly contact with packaging plastic 180 with the second wire 150.Even if therefore when packaging plastic 180 is in high/low temperature change and produces internal stress; first protective layer 160 and the second protective layer 170 also can help the stress absorbing packaging plastic 180; namely become the buffering between packaging plastic 180 and the first wire 140 and the second wire 150, with reduce the first wire 140 and the second wire 150 produce be out of shape, the probability of sealing-off or broken string.
Specifically, the first protective layer 160 and the second protective layer 170 all can be thermoplastics type's plastic cement, and it has a melting temperature.When namely thermoplastics type's plastic cement is in liquid state higher than melting temperature, otherwise, when thermoplastics type's plastic cement just can be cured lower than during melting temperature.Under a heating state (thermal shock such as in light emitting module 100 is tested); if the heating-up temperature of light emitting module 100 is higher than the melting temperature of the first protective layer 160 and the second protective layer 170, then the first protective layer 160 and the second protective layer 170 all become liquid.And because of thermal coefficient of expansion (the Coefficient of ThermalExpansion between packaging plastic 180 and the first wire 140 (or second wire 150), CTE) usually do not mate, therefore heat instantly at light emitting module 100, namely the first liquid protective layer 160 and the second protective layer 170 can be used as the buffering of deformation between packaging plastic 180 and the first wire 140 (or second wire 150), absorb the internal stress of packaging plastic 180 and the first wire 140 (or second wire 150) respectively, to reduce the impact that the first wire 140 and the second wire 150 are subject to the stress of packaging plastic 180, and then produce distortion, the probability of sealing-off or broken string.
In one or more execution mode, the material of above-mentioned thermoplastics type's plastic cement can be Merlon (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), poly terephthalic acid Isosorbide-5-Nitrae cyclohexanedimethanol ester (PCT), polypropylene (PP), nylon (Nylon) one of them or its combination.And thermoplastics type's plastic cement such as first can be heated to liquid state, drop on the first wire 140 and the second wire 150 respectively with injection system more afterwards, to form the first protective layer 160 and the second protective layer 170 respectively.In order to increase thermoplastics type's plastic cement in the attachment degree of the first wire 140 and the second wire 150, the contact angle between liquid thermoplastics type's plastic cement and the first wire 140 (and/or second wire 150) can be selected to be less than 90 degree, but the present invention is not as limit.
In one or more execution mode, in thermoplastics type's plastic cement, more comprise multiple scattering particles 162.When the light beam that the first light-emitting diode 130 sends is beaten to scattering particles 162, scattering particles 162 can increase the scattering degree of its light beam, to increase hot temperature (Correlated ColorTemperature, the CCT) uniformity of light emitting module 100 entire light.That is, respectively when wide-angle and low-angle direction watch light emitting module 100, its photochromic all essence is consistent.
In one or more execution mode, the material of scattering particles 162 can be titanium dioxide (TiO
2), silicon dioxide (SiO
2), zinc oxide (ZnO), aluminium oxide (Al
2o
3) one of them or its combination.The usual tool high index of refraction of material because of scattering particles 162, therefore scattering particles 162 also has the effect promoting reflectivity.And by the ratio of adjustment scattering particles 162 in thermoplastics type's plastic cement, the light extraction efficiency of light emitting module 100 can be increased.
In one or more execution mode, in packaging plastic 180 and/or thermoplastics type's plastic cement (i.e. the first protective layer 160 and the second protective layer 170), more comprise multiple wavelength convert particle 182.Such as in FIG, in packaging plastic 180 and thermoplastics type's plastic cement, all comprise wavelength convert particle 182, but in other implementations, wavelength convert particle 182 also only can be distributed in packaging plastic 180 with in thermoplastics type's plastic cement wherein one, and the present invention is not as limit.When the light beam that the first light-emitting diode 130 sends is beaten to wavelength convert particle 182, the wavelength of wavelength convert particle 182 switchable beam, therefore the photochromic of light beam just can be changed.Wavelength convert particle 182 is such as phosphor powder or quantum dot, and the present invention is not as limit.
It is worth mentioning that, in one embodiment, if light emitting module 100 comprises scattering particles 162 and wavelength convert particle 182 simultaneously, then because scattering particles 162 has the effect of scattered beam, that is scattering particles 162 can scattering conversion photochromic after light beam, therefore the quantity of wavelength convert particle 182 can reduce relatively, to reduce the cost of light emitting module 100.
In the present embodiment, the material of encapsulation cup 120 can be thermoplastic plastic or thermosetting plastic, and its material has the reflectivity being greater than 80%, to assist the beam reflection that sent by the first light-emitting diode 130 to the exiting surface 102 of light emitting module 100.When the material encapsulating cup 120 is thermoplastic plastic; its material can be Merlon (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), poly terephthalic acid 1; the combination of 4 cyclohexanedimethanol esters (PCT), polypropylene (PP), nylon (Nylon) one of them or its, but the melting temperature of encapsulation cup 120 is higher than the melting temperature of the first protective layer 160 and the second protective layer 170.And when to encapsulate the material of cup 120 be thermosetting plastic, its material can be silica resin (Silicone), epoxy resin (Epoxy), acrylate (Acrylate), Adamanda one of them or its combination.In addition, the material of packaging plastic 180 also can be thermosetting plastic, such as silica resin (Silicone), epoxy resin (Epoxy), acrylate (Acrylate), the combination of Adamanda one of them or its.And the material of the first wire 140 and the second wire 150 can be conductive material, such as gold, silver, copper or aluminium.
Then please refer to Fig. 2, it illustrates the profile of the light-emitting device of an embodiment of the present invention.Light-emitting device comprises substrate 200, light emitting module 100 and tin cream 300.Tin cream 300 makes light emitting module 100 be fixed on substrate 200 via reflow mode.The melting temperature of tin cream 300 is higher than the melting temperature of the first protective layer 160 and the second protective layer 170.On the other hand, when encapsulation cup 120 is thermoplasticity material, the melting temperature of melting temperature higher than tin cream 300 of cup 120 is encapsulated.Thus; when light emitting module 100 is when carrying out back welding process; its reflow temperature can be set between the melting temperature of tin cream 300 and encapsulation cup 120, makes the first protective layer 160, second protective layer 170 all be in liquid state with tin cream 300, encapsulates cup 120 and be then in solid-state.Therefore the first protective layer 160, second protective layer 170 can reach the effect of protection first wire 140 and the second wire 150 respectively, with reduce the first wire 140 and the second wire 150 produce be out of shape, the probability of sealing-off or broken string.
Then please refer to Fig. 3, it illustrates the profile of the light emitting module 400 of another execution mode of the present invention.Light emitting module 400 comprises the second lead frame 410, encapsulation cup 420, second light-emitting diode 430, privates 440, the 3rd protective layer 460 and packaging plastic 480.Second lead frame 410 comprises the 3rd conductive part 412 separated from one another and the 4th conductive part 414, and the 4th conductive part 414 has predetermined crystal bonding area I.Encapsulation cup 420 coated part second lead frame 410, and formation exposes predetermined crystal bonding area I depression in the surface hole 422.Second light-emitting diode 430 has a front 436 and relative to the back side 438 in front 436.Front 436 has third electrode 432, and the back side 438 that the back side 438 has the 4th electrode 434, the second light-emitting diode 430 is then bonded on the I of crystal bonding area, and the 4th electrode 434 and the 4th conductive part 414 are electrically connected.In other words, the second light-emitting diode 430 is a vertical LED (Vertical chip).Privates 440 is electrically connected between the 3rd conductive part 412 and third electrode 432.The coated privates 440 of 3rd protective layer 460.Packaging plastic 480 is inserted and is placed in depression hole 422, and covers the second light-emitting diode 430 and by the coated privates 440 of the 3rd protective layer 460.
In the present embodiment, the coated privates 440 of the 3rd protective layer 460, that is, at least the privates 440 of part does not directly contact with packaging plastic 480.Even if therefore when packaging plastic 480 is in high/low temperature change and produces internal stress; 3rd protective layer 460 also can help the stress absorbing packaging plastic 480; namely the buffering between packaging plastic 480 and privates 440 is become, to reduce the probability that privates 440 produces distortion, sealing-off or broken string.
Specifically, the 3rd protective layer 460 can be thermoplastics type's plastic cement, and it has a melting temperature.Under a heating state (thermal shock such as in light emitting module 400 is tested), if the heating-up temperature of light emitting module 400 is higher than the melting temperature of the 3rd protective layer 460, then the 3rd protective layer 460 becomes liquid.And usually do not mate because of the thermal coefficient of expansion between packaging plastic 480 with privates 440; therefore heat instantly at light emitting module 400; namely the 3rd liquid protective layer 460 can be used as the buffering of deformation between packaging plastic 480 and privates 440; by absorbing the internal stress of packaging plastic 480 with privates 440; to reduce the impact that privates 440 is subject to the stress of packaging plastic 480, and then produce the probability of distortion, sealing-off or broken string.
In one or more execution mode, the material of above-mentioned thermoplastics type's plastic cement can be Merlon (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), poly terephthalic acid Isosorbide-5-Nitrae cyclohexanedimethanol ester (PCT), polypropylene (PP), nylon (Nylon) one of them or its combination.And thermoplastics type's plastic cement such as first can be heated to liquid state, drop in respectively on privates 440 with injection system to form the 3rd protective layer 460 more afterwards.In order to increase thermoplastics type's plastic cement in the attachment degree of privates 440, the contact angle between liquid thermoplastics type's plastic cement and privates 440 can be selected to be less than 90 degree, but the present invention is not as limit.
In one or more execution mode, in thermoplastics type's plastic cement, more comprise multiple scattering particles 462.When the light beam that the second light-emitting diode 430 sends is beaten to scattering particles 462, scattering particles 462 can increase the scattering degree of its light beam, to increase the hot temperature uniformity of light emitting module 400 entire light.
In one or more execution mode, the material of scattering particles 462 can be titanium dioxide (TiO
2), silicon dioxide (SiO
2), zinc oxide (ZnO), aluminium oxide (Al
2o
3) one of them or its combination.The usual tool high index of refraction of material because of scattering particles 462, therefore scattering particles 462 also has the effect promoting reflectivity.And by the ratio of adjustment scattering particles 462 in thermoplastics type's plastic cement, the light extraction efficiency of light emitting module 400 can be increased.
In one or more execution mode, in packaging plastic 480 and/or thermoplastics type's plastic cement (i.e. the 3rd protective layer 460), more comprise multiple wavelength convert particle 482.Such as in figure 3, in packaging plastic 480 and thermoplastics type's plastic cement, all comprise wavelength convert particle 482, but in other implementations, wavelength convert particle 482 also only can be distributed in packaging plastic 480 with in thermoplastics type's plastic cement wherein one, and the present invention is not as limit.When the light beam that the second light-emitting diode 430 sends is beaten to wavelength convert particle 482, the wavelength of wavelength convert particle 482 switchable beam, therefore the photochromic of light beam just can be changed.Wavelength convert particle 482 is such as phosphor powder or quantum dot, and the present invention is not as limit.
It is worth mentioning that, in one embodiment, if light emitting module 400 comprises scattering particles 462 and wavelength convert particle 482 simultaneously, then because scattering particles 462 has the effect of scattered beam, that is scattering particles 462 can scattering conversion photochromic after light beam, therefore the quantity of wavelength convert particle 482 can reduce relatively, to reduce the cost of light emitting module 400.
In the present embodiment, the material of encapsulation cup 420 can be thermoplastic plastic or thermosetting plastic, and its material has the reflectivity being greater than 80%, to assist the beam reflection that sent by the second light-emitting diode 430 to the exiting surface 402 of light emitting module 400.When the material encapsulating cup 420 is thermoplastic plastic; its material can be Merlon (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), poly terephthalic acid 1; the combination of 4 cyclohexanedimethanol esters (PCT), polypropylene (PP), nylon (Nylon) one of them or its, but the melting temperature of encapsulation cup 420 is higher than the melting temperature of the 3rd protective layer 460.And when to encapsulate the material of cup 420 be thermosetting plastic, its material can be silica resin (Silicone), epoxy resin (Epoxy), acrylate (Acrylate), Adamanda one of them or its combination.In addition, the material of packaging plastic 480 also can be thermosetting plastic, such as silica resin (Silicone), epoxy resin (Epoxy), acrylate (Acrylate), the combination of Adamanda one of them or its.And the material of privates 440 can be conductive material, such as gold, silver, copper or aluminium.
Then please refer to Fig. 4, it illustrates the profile of the light-emitting device of another execution mode of the present invention.Light-emitting device comprises substrate 200, light emitting module 400 and tin cream 300.Tin cream 300 makes light emitting module 400 be fixed on substrate 200 via reflow mode.The melting temperature of tin cream 300 is higher than the melting temperature of the 3rd protective layer 460.On the other hand, when encapsulation cup 420 is thermoplasticity material, the melting temperature of melting temperature higher than tin cream 300 of cup 420 is encapsulated.Thus, when light emitting module 400 is when carrying out back welding process, its reflow temperature can be set between the melting temperature of tin cream 300 and encapsulation cup 420, makes the 3rd protective layer 460 all be in liquid state with tin cream 300, encapsulates cup 420 and be then in solid-state.Therefore the 3rd protective layer 460 can reach the effect of protection privates 440, to reduce the probability that privates 440 produces distortion, sealing-off or broken string.
Although the present invention with execution mode openly as above; but it is also not used to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when doing various changes and amendment, therefore protection scope of the present invention is when being as the criterion depending on accompanying claims protection range person of defining.
Claims (14)
1. a light emitting module, is characterized in that, comprises:
One first lead frame, comprises one first conductive part separated from one another and one second conductive part, and this second conductive part has a predetermined crystal bonding area;
One encapsulation cup, this first lead frame of coated part, and form one and expose this predetermined crystal bonding area depression in the surface hole;
One first light-emitting diode, have a front and relative to the back side in this front, and this front has one first electrode separated from one another and one second electrode, this back side of this first light-emitting diode is then bonded on this crystal bonding area;
One first wire, is electrically connected between this first conductive part and this first electrode;
One second wire, is electrically connected between this second conductive part and this second electrode;
One first, second protective layer, respectively this first, second wire coated; And
One packaging plastic, inserts and is placed in this depression hole, and covers this first light-emitting diode and by coated this first, second wire of this first, second protective layer.
2. light emitting module as claimed in claim 1, it is characterized in that, this first, second protective layer is thermoplastics type's plastic cement.
3. light emitting module as claimed in claim 2, it is characterized in that, the material of this thermoplastics type's plastic cement is Merlon, polyethylene, polyethylene terephthalate, polybutylene terephthalate, poly terephthalic acid Isosorbide-5-Nitrae cyclohexanedimethanol ester, polypropylene, nylon one of them or its combination.
4. light emitting module as claimed in claim 3, is characterized in that, also comprise multiple scattering particles in this thermoplastics type's plastic cement.
5. light emitting module as claimed in claim 4, is characterized in that, the material of those scattering particless is titanium dioxide, silicon dioxide, zinc oxide, aluminium oxide one of them or its combination.
6. light emitting module as claimed in claim 5, is characterized in that, also comprise multiple wavelength convert particle in this packaging plastic and/or this thermoplastics type's plastic cement.
7. a light-emitting device, is characterized in that, includes:
One substrate;
Just like described light emitting module arbitrary in claim 1 to 6; And
One tin cream, makes this light emitting module be fixed on this substrate via reflow mode, and wherein the melting temperature of this tin cream is higher than the melting temperature of this first, second protective layer.
8. a light emitting module, is characterized in that, comprises:
One second lead frame, comprises one the 3rd conductive part separated from one another and one the 4th conductive part, and the 4th conductive part has a predetermined crystal bonding area;
One encapsulation cup, this second lead frame of coated part, and form one and expose this predetermined crystal bonding area depression in the surface hole;
One second light-emitting diode, there is a front and relative to the back side in this front, wherein this front has a third electrode, and this back side has one the 4th electrode, this back side of this second light-emitting diode is then bonded on this crystal bonding area, and the 4th electrode and the 4th conductive part are electrically connected;
One privates, is electrically connected between the 3rd conductive part and this third electrode;
One the 3rd protective layer, this privates coated; And
One packaging plastic, inserts and is placed in this depression hole, and covers this second light-emitting diode and by coated this privates of the 3rd protective layer.
9. light emitting module as claimed in claim 8, it is characterized in that, the 3rd protective layer is thermoplastics type's plastic cement.
10. light emitting module as claimed in claim 9, it is characterized in that, the material of this thermoplastics type's plastic cement is Merlon, polyethylene, polyethylene terephthalate, polybutylene terephthalate, poly terephthalic acid Isosorbide-5-Nitrae cyclohexanedimethanol ester, polypropylene, nylon one of them or its combination.
11. light emitting modules as claimed in claim 10, is characterized in that, also comprise multiple scattering particles in this thermoplastics type's plastic cement.
12. light emitting modules as claimed in claim 11, is characterized in that, the material of those scattering particless is titanium dioxide, silicon dioxide, zinc oxide, aluminium oxide one of them or its combination.
13. light emitting modules as claimed in claim 12, is characterized in that, also comprise multiple wavelength convert particle in this packaging plastic and/or this thermoplastics type's plastic cement.
14. 1 kinds of light-emitting devices, is characterized in that, include:
One substrate;
Just like described light emitting module arbitrary in claim 8 to 13; And
One tin cream, makes this light emitting module be fixed on this substrate via reflow mode, and wherein the melting temperature of this tin cream is higher than the melting temperature of the 3rd protective layer.
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TW102135868A TW201515291A (en) | 2013-10-03 | 2013-10-03 | Light emitting module and using the same |
TW102135868 | 2013-10-03 |
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CN105402630A (en) * | 2015-12-15 | 2016-03-16 | 晶科电子(广州)有限公司 | LED module light source |
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