TW201515291A - Light emitting module and using the same - Google Patents

Light emitting module and using the same Download PDF

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Publication number
TW201515291A
TW201515291A TW102135868A TW102135868A TW201515291A TW 201515291 A TW201515291 A TW 201515291A TW 102135868 A TW102135868 A TW 102135868A TW 102135868 A TW102135868 A TW 102135868A TW 201515291 A TW201515291 A TW 201515291A
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Taiwan
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wire
light
conductive portion
light emitting
electrode
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TW102135868A
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Chinese (zh)
Inventor
Chia-Ming Sung
Yu-Chun Lee
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Lextar Electronics Corp
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Priority to TW102135868A priority Critical patent/TW201515291A/en
Priority to CN201310532714.2A priority patent/CN104518076A/en
Publication of TW201515291A publication Critical patent/TW201515291A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A light emitting module includes a first lead frame, a carrier, a first light emitting diode, a first wire, a second wire, a first protection layer, a second protection layer, and an encapsulant. The first lead frame includes a first conductive portion and a second conductive portion apart from each other. The second conductive portion has a die-bonding area. The carrier covers a portion of the first lead frame, and forms a cavity exposing the die-bonding area. A front side of the first light emitting diode has a first electrode and a second electrode apart from each other, and the back side of the first light emitting diode is fixed on the die-bonding area. The first wire is electrically connected between the first conductive portion and the first electrode, and the second wire is electrically connected between the second conductive portion and the second electrode. The first protection layer and the second protection layer cover the first wire and the second wire, respectively. The encapsulant is filled in the cavity.

Description

發光模組及其應用 Light-emitting module and its application

本發明是有關於一種發光模組。 The invention relates to a lighting module.

一般而言,在發光二極體裝置的封裝製程中,可使用金線將發光二極體晶片與導線架之間進行電性連接,之後再將封裝膠填入導線架,其中封裝膠係包覆金線,以完成發光二極體裝置的製程。然而在發光二極體裝置的製作過程或之後的操作過程當中,封裝膠在高低溫變化過程時會產生內部應力,進而導致與其接觸之金線因應力拉扯而產生變形或脫焊,更甚者會產生斷線,使得發光二極體裝置失效。此問題雖然可透過不同線弧的打線製程進行改善,但因拉長金線而使金線的使用量提升,反而會增加生產成本。 Generally, in the packaging process of the LED device, the gold wire can be used to electrically connect the LED chip and the lead frame, and then the package rubber is filled into the lead frame, wherein the package is packaged. The gold wire is covered to complete the process of the light emitting diode device. However, during the manufacturing process or subsequent operation of the LED device, the encapsulant will generate internal stress during the high and low temperature change process, which may cause the gold wire in contact with it to be deformed or de-soldered due to stress pull, and even worse. A wire breakage will occur, causing the light-emitting diode device to fail. Although this problem can be improved through different wire arcing processes, the use of gold wires is increased by lengthening the gold wire, which in turn increases production costs.

本發明之一態樣提供一種發光模組,包含第一導線架、封裝杯體、第一發光二極體、第一導線、第二導線、第一保護層、第二保護層與封裝膠。第一導線架包含彼此 分離之第一導電部與第二導電部,且第二導電部上具有預定的固晶區。封裝杯體包覆部份第一導線架,並且形成裸露出預定的固晶區表面之凹陷孔洞。第一發光二極體具有一正面以及一相對於正面之背面。正面上具有彼此分離的第一電極以及第二電極,而第一發光二極體之背面則固著於固晶區上。第一導線電性連接於第一導電部與第一電極之間。第二導線電性連接於第二導電部與第二電極之間。第一、第二保護層分別包覆第一、第二導線。封裝膠填入置於凹陷孔洞內,並覆蓋第一發光二極體及被第一、第二保護層所包覆的第一、第二導線。 One aspect of the present invention provides a light emitting module including a first lead frame, a package cup, a first light emitting diode, a first wire, a second wire, a first protective layer, a second protective layer, and an encapsulant. The first lead frame contains each other The first conductive portion and the second conductive portion are separated, and the second conductive portion has a predetermined solid crystal region thereon. The package cup covers a portion of the first lead frame and forms a recessed hole that exposes a predetermined surface of the die attach region. The first light emitting diode has a front side and a back side opposite to the front side. The front surface has a first electrode and a second electrode separated from each other, and the back surface of the first light emitting diode is fixed on the solid crystal region. The first wire is electrically connected between the first conductive portion and the first electrode. The second wire is electrically connected between the second conductive portion and the second electrode. The first and second protective layers respectively cover the first and second wires. The encapsulant is filled in the recessed hole and covers the first light emitting diode and the first and second wires covered by the first and second protective layers.

在一或多個實施方式中,第一、第二保護層係熱塑型塑膠。 In one or more embodiments, the first and second protective layers are thermoplastic plastics.

在一或多個實施方式中,熱塑型塑膠之材質為聚碳酸酯(PC)、聚乙烯(PE)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚對苯二甲酸1,4環己二甲醇酯(PCT)、聚丙烯(PP)、尼龍(Nylon)其中之一或其組合。 In one or more embodiments, the thermoplastic plastic material is polycarbonate (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate ( PBT), one or a combination of polytetramethylene terephthalate (PCT), polypropylene (PP), nylon (Nylon).

在一或多個實施方式中,熱塑型塑膠內更包含複數散射粒子。 In one or more embodiments, the thermoplastic plastic further comprises a plurality of scattering particles.

在一或多個實施方式中,散射粒子的材質為二氧化鈦(TiO2)、二氧化矽(SiO2)、氧化鋅(ZnO)、氧化鋁(Al2O3)其中之一或其組合。 In one or more embodiments, the material of the scattering particles is one of titanium dioxide (TiO 2 ), cerium oxide (SiO 2 ), zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), or a combination thereof.

在一或多個實施方式中,封裝膠及/或熱塑型塑膠內更包含複數波長轉換粒子。 In one or more embodiments, the encapsulant and/or the thermoplastic plastic further comprises a plurality of wavelength converting particles.

本發明之另一態樣提供一種發光裝置,包含基板、 上述之發光模組以及錫膏。錫膏經由回焊方式使發光模組被固定於基板上。錫膏之熔點溫度係高於第一、第二保護層之熔點溫度。 Another aspect of the present invention provides a light emitting device including a substrate, The above lighting module and solder paste. The solder paste is fixed to the substrate by reflow soldering. The melting point temperature of the solder paste is higher than the melting temperature of the first and second protective layers.

本發明之再一態樣提供一種發光模組,包含第二導線架、封裝杯體、第二發光二極體、第三導線、第三保護層與封裝膠。第二導線架包含彼此分離之第三導電部與第四導電部,且第四導電部上具有預定的固晶區。封裝杯體包覆部份第二導線架,並且形成裸露出預定的固晶區表面之凹陷孔洞。第二發光二極體具有一正面以及一相對於該正面之背面。正面具有第三電極,而背面具有第四電極,而第二發光二極體之背面則固著於固晶區上,且第四電極與第四導電部電性連接。第三導線電性連接於第三導電部與第三電極之間。第三保護層包覆第三導線。封裝膠填入置於凹陷孔洞內,並覆蓋第二發光二極體及被第三保護層所包覆的第三導線。 According to still another aspect of the present invention, a light emitting module includes a second lead frame, a package cup, a second light emitting diode, a third wire, a third protective layer, and an encapsulant. The second lead frame includes a third conductive portion and a fourth conductive portion separated from each other, and the fourth conductive portion has a predetermined solid crystal region thereon. The package cup covers a portion of the second lead frame and forms a recessed hole that exposes a predetermined surface of the die-bonding region. The second light emitting diode has a front side and a back side opposite to the front side. The front surface has a third electrode, and the back surface has a fourth electrode, and the back surface of the second light emitting diode is fixed on the solid crystal region, and the fourth electrode is electrically connected to the fourth conductive portion. The third wire is electrically connected between the third conductive portion and the third electrode. The third protective layer covers the third wire. The encapsulant is filled in the recessed hole and covers the second LED and the third conductor covered by the third protective layer.

在一或多個實施方式中,第三保護層係熱塑型塑膠。 In one or more embodiments, the third protective layer is a thermoplastic plastic.

在一或多個實施方式中,熱塑型塑膠之材質為聚碳酸酯(PC)、聚乙烯(PE)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚對苯二甲酸1,4環己二甲醇酯(PCT)、聚丙烯(PP)、尼龍(Nylon)其中之一或其組合。 In one or more embodiments, the thermoplastic plastic material is polycarbonate (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate ( PBT), one or a combination of polytetramethylene terephthalate (PCT), polypropylene (PP), nylon (Nylon).

在一或多個實施方式中,熱塑型塑膠內更包含複數散射粒子。 In one or more embodiments, the thermoplastic plastic further comprises a plurality of scattering particles.

在一或多個實施方式中,散射粒子的材質為二氧化 鈦(TiO2)、二氧化矽(SiO2)、氧化鋅(ZnO)、氧化鋁(Al2O3)其中之一或其組合。 In one or more embodiments, the material of the scattering particles is one of titanium dioxide (TiO 2 ), cerium oxide (SiO 2 ), zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), or a combination thereof.

在一或多個實施方式中,封裝膠及/或熱塑型塑膠內更包含複數波長轉換粒子。 In one or more embodiments, the encapsulant and/or the thermoplastic plastic further comprises a plurality of wavelength converting particles.

本發明之又一態樣提供一種發光裝置,包含基板、上述之發光模組與錫膏。錫膏經由回焊方式使發光模組被固定於基板上。錫膏之熔點溫度係高於第三保護層之熔點溫度。 According to still another aspect of the present invention, a light emitting device includes a substrate, the above light emitting module, and a solder paste. The solder paste is fixed to the substrate by reflow soldering. The melting point temperature of the solder paste is higher than the melting point temperature of the third protective layer.

因上述之保護層係包覆導線,因此即使當封裝膠處於高低溫變化而產生內部應力時,保護層也能夠幫助吸收封裝膠的應力,即成為封裝膠與導線之間的緩衝,以減少導線產生變形、脫焊或者斷線的機率。 Since the protective layer covers the wire, the protective layer can help absorb the stress of the encapsulant even when the encapsulant is subjected to high and low temperature changes, thereby becoming a buffer between the encapsulant and the wire to reduce the wire. The chance of deformation, desoldering or wire breakage.

100、400‧‧‧發光模組 100,400‧‧‧Lighting Module

102、402‧‧‧出光面 102, 402‧‧‧Glossy

110‧‧‧第一導線架 110‧‧‧First lead frame

112‧‧‧第一導電部 112‧‧‧First Conductive Department

114‧‧‧第二導電部 114‧‧‧Second Conductive Department

120、420‧‧‧封裝杯體 120, 420‧‧‧ package cup

122、422‧‧‧凹陷孔洞 122, 422‧‧‧ recessed holes

130‧‧‧第一發光二極體 130‧‧‧First LED

132‧‧‧第一電極 132‧‧‧First electrode

134‧‧‧第二電極 134‧‧‧second electrode

136、436‧‧‧正面 136, 436‧‧ positive

138、438‧‧‧背面 138, 438‧‧‧ back

140‧‧‧第一導線 140‧‧‧First wire

150‧‧‧第二導線 150‧‧‧second wire

160‧‧‧第一保護層 160‧‧‧First protective layer

162、462‧‧‧散射粒子 162, 462‧‧‧ scattering particles

170‧‧‧第二保護層 170‧‧‧Second protective layer

180、480‧‧‧封裝膠 180, 480‧‧‧Package

182、482‧‧‧波長轉換粒子 182, 482‧‧‧ wavelength conversion particles

200‧‧‧基板 200‧‧‧Substrate

300‧‧‧錫膏 300‧‧‧ solder paste

410‧‧‧第二導線架 410‧‧‧Second lead frame

412‧‧‧第三導電部 412‧‧‧ Third Conductive Department

414‧‧‧第四導電部 414‧‧‧4th Conductive Department

430‧‧‧第二發光二極體 430‧‧‧Second light-emitting diode

432‧‧‧第三電極 432‧‧‧ third electrode

434‧‧‧第四電極 434‧‧‧fourth electrode

440‧‧‧第三導線 440‧‧‧ Third wire

460‧‧‧第三保護層 460‧‧‧ third protective layer

I‧‧‧固晶區 I‧‧‧ Gujing District

第1圖繪示本發明一實施方式之發光模組的剖面圖。 FIG. 1 is a cross-sectional view showing a light emitting module according to an embodiment of the present invention.

第2圖繪示本發明一實施方式之發光裝置的剖面圖。 Fig. 2 is a cross-sectional view showing a light-emitting device according to an embodiment of the present invention.

第3圖繪示本發明另一實施方式之發光模組的剖面圖。 3 is a cross-sectional view of a light emitting module according to another embodiment of the present invention.

第4圖繪示本發明另一實施方式之發光裝置的剖面圖。 Fig. 4 is a cross-sectional view showing a light-emitting device according to another embodiment of the present invention.

以下將以圖式揭露本發明的複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本 發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。 The embodiments of the present invention are disclosed in the following drawings, and for the purpose of clarity However, it should be understood that these practical details are not applied to limit this invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.

第1圖繪示本發明一實施方式之發光模組100的剖面圖。發光模組100包含第一導線架110、封裝杯體120、第一發光二極體130、第一導線140、第二導線150、第一保護層160、第二保護層170與封裝膠180。第一導線架110包含彼此分離之第一導電部112與第二導電部114,且第二導電部114上具有預定的固晶區I。封裝杯體120包覆部份第一導線架110,並且形成裸露出預定的固晶區I表面之凹陷孔洞122。第一發光二極體130具有一正面136以及一相對於正面136之背面138。正面136上具有彼此分離的第一電極132以及第二電極134,而第一發光二極體130之背面138則固著於固晶區I上。換言之,第一發光二極體130為一水平式發光二極體(Face up chip)。第一導線140電性連接於第一導電部112與第一電極132之間。第二導線150電性連接於第二導電部114與第二電極134之間。第一保護層160與第二保護層170分別包覆第一導線140與第二導線150。封裝膠180填入置於凹陷孔洞122內,並覆蓋第一發光二極體130及被第一保護層160與第二保護層170所包覆的第一導線140與第二導線150。 FIG. 1 is a cross-sectional view showing a light emitting module 100 according to an embodiment of the present invention. The light emitting module 100 includes a first lead frame 110 , a package cup 120 , a first light emitting diode 130 , a first conductive line 140 , a second conductive line 150 , a first protective layer 160 , a second protective layer 170 , and an encapsulant 180 . The first lead frame 110 includes a first conductive portion 112 and a second conductive portion 114 separated from each other, and the second conductive portion 114 has a predetermined solid crystal region I thereon. The package cup 120 covers a portion of the first lead frame 110 and forms a recessed hole 122 that exposes a predetermined surface of the die-bonding region I. The first light emitting diode 130 has a front surface 136 and a back surface 138 opposite to the front surface 136. The front surface 136 has a first electrode 132 and a second electrode 134 separated from each other, and the back surface 138 of the first light emitting diode 130 is fixed on the die bonding region 1. In other words, the first light emitting diode 130 is a horizontal light up diode. The first wire 140 is electrically connected between the first conductive portion 112 and the first electrode 132. The second wire 150 is electrically connected between the second conductive portion 114 and the second electrode 134. The first protective layer 160 and the second protective layer 170 respectively cover the first wire 140 and the second wire 150. The encapsulant 180 is filled in the recessed hole 122 and covers the first LED 230 and the first and second wires 140 and 150 covered by the first and second protective layers 160 and 170.

在本實施方式中,第一保護層160與第二保護層170分別包覆第一導線140與第二導線150,也就是說,至少部份之第一導線140與第二導線150不與封裝膠180直 接接觸。因此即使當封裝膠180處於高低溫變化而產生內部應力時,第一保護層160與第二保護層170也能夠幫助吸收封裝膠180的應力,即成為封裝膠180與第一導線140以及第二導線150之間的緩衝,以減少第一導線140與第二導線150產生變形、脫焊或者斷線的機率。 In the embodiment, the first protective layer 160 and the second protective layer 170 respectively cover the first conductive line 140 and the second conductive line 150, that is, at least a portion of the first conductive line 140 and the second conductive line 150 are not packaged. Glue 180 straight Contact. Therefore, even when the encapsulant 180 is subjected to high and low temperature changes to generate internal stress, the first protective layer 160 and the second protective layer 170 can help absorb the stress of the encapsulant 180, that is, become the encapsulant 180 and the first wire 140 and the second. The buffer between the wires 150 is used to reduce the probability of deformation, desoldering or wire breakage of the first wire 140 and the second wire 150.

詳細而言,第一保護層160與第二保護層170皆可為熱塑型塑膠,其具有一熔點溫度。當熱塑型塑膠高於熔點溫度即處於液態,反之,當熱塑型塑膠低於熔點溫度時便可被固化。在一加熱情況下(例如於發光模組100之冷熱衝擊測試),若發光模組100的加熱溫度高於第一保護層160與第二保護層170之熔點溫度,則第一保護層160與第二保護層170皆成為液態。而因封裝膠180與第一導線140(或第二導線150)之間的熱膨脹係數(Coefficient of Thermal Expansion,CTE)通常不匹配,因此在發光模組100加熱當下,液態的第一保護層160與第二保護層170即可作為封裝膠180與第一導線140(或第二導線150)之間形變的緩衝,分別吸收封裝膠180與第一導線140(或第二導線150)的內部應力,以減少第一導線140與第二導線150受到封裝膠180之應力的影響,進而產生變形、脫焊或者斷線的機率。 In detail, both the first protective layer 160 and the second protective layer 170 may be thermoplastic plastics having a melting point temperature. When the thermoplastic plastic is higher than the melting point, it is in a liquid state, and conversely, when the thermoplastic plastic is lower than the melting point, it can be cured. If the heating temperature of the light emitting module 100 is higher than the melting temperature of the first protective layer 160 and the second protective layer 170, the first protective layer 160 is The second protective layer 170 is in a liquid state. Because the coefficient of thermal expansion (CTE) between the encapsulant 180 and the first wire 140 (or the second wire 150) generally does not match, the liquid first protective layer 160 is heated when the light emitting module 100 is heated. And the second protective layer 170 can be used as a buffer between the encapsulant 180 and the first wire 140 (or the second wire 150), respectively absorbing the internal stress of the encapsulant 180 and the first wire 140 (or the second wire 150) In order to reduce the influence of the stress of the encapsulant 180 on the first wire 140 and the second wire 150, thereby generating the probability of deformation, desoldering or wire breakage.

在一或多個實施方式中,上述之熱塑型塑膠之材質可為聚碳酸酯(PC)、聚乙烯(PE)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚對苯二甲酸1,4環己二甲醇酯(PCT)、聚丙烯(PP)、尼龍(Nylon)其中之一或其組 合。而熱塑型塑膠可例如先加熱至液態,之後再以注射方式分別滴在第一導線140與第二導線150上,以分別形成第一保護層160與第二保護層170。為了增加熱塑型塑膠於第一導線140與第二導線150的附著度,液態的熱塑型塑膠與第一導線140(與/或第二導線150)之間的接觸角可選擇小於90度,然而本發明不以此為限。 In one or more embodiments, the thermoplastic plastic material may be polycarbonate (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate. Diester (PBT), polytetramethylene terephthalate (PCT), polypropylene (PP), nylon (Nylon), or a group thereof Hehe. The thermoplastic plastic can be heated to a liquid state, for example, and then dropped onto the first wire 140 and the second wire 150 by injection to form the first protective layer 160 and the second protective layer 170, respectively. In order to increase the adhesion of the thermoplastic plastic to the first wire 140 and the second wire 150, the contact angle between the liquid thermoplastic plastic and the first wire 140 (and/or the second wire 150) may be less than 90 degrees. However, the invention is not limited thereto.

在一或多個實施方式中,熱塑型塑膠內更包含複數散射粒子162。當第一發光二極體130所發出之光束打至散射粒子162時,散射粒子162能夠增加其光束之散射程度,以增加發光模組100整體光束的熱溫(Correlated Color Temperature,CCT)均勻性。也就是說,分別在大角度與小角度方向觀看發光模組100時,其光色皆實質一致。 In one or more embodiments, the thermoplastic plastic further comprises a plurality of scattering particles 162. When the light beam emitted by the first light-emitting diode 130 hits the scattering particle 162, the scattering particle 162 can increase the degree of scattering of the light beam to increase the uniformity of the Coriosphere Temperature (CCT) of the overall light beam of the light-emitting module 100. . That is to say, when the light-emitting module 100 is viewed in a large angle and a small angle direction, the light colors are substantially identical.

在一或多個實施方式中,散射粒子162的材質可為二氧化鈦(TiO2)、二氧化矽(SiO2)、氧化鋅(ZnO)、氧化鋁(Al2O3)其中之一或其組合。因散射粒子162的材質通常具高折射率,因此散射粒子162亦具有提升反射率的效果。而藉由調整散射粒子162於熱塑型塑膠內的比例,可增加發光模組100之出光效率。 In one or more embodiments, the material of the scattering particles 162 may be one of titanium dioxide (TiO 2 ), cerium oxide (SiO 2 ), zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), or a combination thereof. . Since the material of the scattering particles 162 usually has a high refractive index, the scattering particles 162 also have an effect of improving the reflectance. By adjusting the proportion of the scattering particles 162 in the thermoplastic plastic, the light extraction efficiency of the light emitting module 100 can be increased.

在一或多個實施方式中,封裝膠180及/或熱塑型塑膠(即第一保護層160與第二保護層170)內更包含複數波長轉換粒子182。例如在第1圖中,封裝膠180與熱塑型塑膠中皆包含波長轉換粒子182,然而在其他的實施方式中,波長轉換粒子182亦可僅分佈於封裝膠180與熱塑型塑膠其中一者內,本發明不以此為限。當第一發光二極體130 所發出之光束打至波長轉換粒子182時,波長轉換粒子182可轉換光束之波長,因此光束之光色便可被改變。波長轉換粒子182例如為螢光粉或量子點,本發明不以此為限。 In one or more embodiments, the encapsulant 180 and/or the thermoplastic (ie, the first protective layer 160 and the second protective layer 170) further comprise a plurality of wavelength converting particles 182. For example, in the first embodiment, both the encapsulant 180 and the thermoplastic plastic include the wavelength converting particles 182. However, in other embodiments, the wavelength converting particles 182 may be distributed only in the encapsulant 180 and the thermoplastic plastic. The invention is not limited thereto. When the first light emitting diode 130 When the emitted light beam strikes the wavelength converting particles 182, the wavelength converting particles 182 can convert the wavelength of the light beam, so that the light color of the light beam can be changed. The wavelength converting particles 182 are, for example, phosphor powder or quantum dots, and the invention is not limited thereto.

值得一提的是,在一實施方式中,若發光模組100同時包含散射粒子162與波長轉換粒子182,則因散射粒子162具有散射光線的效果,亦即散射粒子162能夠散射轉換光色後之光束,因此波長轉換粒子182的數量可相對減少,以減少發光模組100的成本。 It is to be noted that, in an embodiment, if the light emitting module 100 includes the scattering particles 162 and the wavelength converting particles 182 at the same time, the scattering particles 162 have the effect of scattering light, that is, the scattering particles 162 can scatter the converted color. The light beam, and thus the number of wavelength converting particles 182, can be relatively reduced to reduce the cost of the light emitting module 100.

在本實施方式中,封裝杯體120之材質可為熱塑性塑膠或者熱固性塑膠,且其材質具有大於80%的反射率,以協助將第一發光二極體130所發出之光束反射至發光模組100的出光面102。當封裝杯體120之材質為熱塑性塑膠時,其材質可為聚碳酸酯(PC)、聚乙烯(PE)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚對苯二甲酸1,4環己二甲醇酯(PCT)、聚丙烯(PP)、尼龍(Nylon)其中之一或其組合,但封裝杯體120的熔點溫度高於第一保護層160與第二保護層170的熔點溫度。而當封裝杯體120之材質為熱固性塑膠時,其材質可為矽氧樹脂(Silicone)、環氧樹脂(Epoxy)、丙烯酸脂(Acrylate)、Adamanda其中之一或其組合。另外,封裝膠180的材質亦可為熱固性塑膠,例如矽氧樹脂(Silicone)、環氧樹脂(Epoxy)、丙烯酸脂(Acrylate)、Adamanda其中之一或其組合。而第一導線140與第二導線150的材質可為導電性材料,例如金、銀、銅或鋁。 In this embodiment, the material of the package cup 120 may be a thermoplastic plastic or a thermosetting plastic, and the material has a reflectance greater than 80% to assist in reflecting the light beam emitted by the first light emitting diode 130 to the light emitting module. The light emitting surface 102 of 100. When the material of the package cup 120 is thermoplastic, the material thereof may be polycarbonate (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate ( PBT), one or a combination of polytetramethylene terephthalate (PCT), polypropylene (PP), nylon (Nylon), but the melting temperature of the package cup 120 is higher than the first protection The melting temperature of the layer 160 and the second protective layer 170. When the material of the package body 120 is a thermosetting plastic, the material may be one of silicone or epoxy, Epoxy, Acrylate, Adamanda or a combination thereof. In addition, the material of the encapsulant 180 may also be a thermosetting plastic such as one of Silicone, Epoxy, Acrylate, Adamanda or a combination thereof. The material of the first wire 140 and the second wire 150 may be a conductive material such as gold, silver, copper or aluminum.

接著請參照第2圖,其繪示本發明一實施方式之發光裝置的剖面圖。發光裝置包含基板200、發光模組100以及錫膏300。錫膏300經由回焊方式使發光模組100被固定於基板200上。錫膏300之熔點溫度係高於第一保護層160與第二保護層170之熔點溫度。另一方面,當封裝杯體120為熱塑性材質時,封裝杯體120的熔點溫度高於錫膏300的熔點溫度。如此一來,當發光模組100在進行回焊製程時,其回焊溫度可設定於錫膏300與封裝杯體120之熔點溫度之間,使得第一保護層160、第二保護層170與錫膏300皆處於液態,而封裝杯體120則處於固態。因此第一保護層160、第二保護層170可分別達到保護第一導線140與第二導線150的效果,以減少第一導線140與第二導線150產生變形、脫焊或者斷線的機率。 Next, please refer to FIG. 2, which is a cross-sectional view showing a light-emitting device according to an embodiment of the present invention. The light emitting device includes a substrate 200, a light emitting module 100, and a solder paste 300. The solder paste 300 is fixed to the substrate 200 by a reflow method. The melting temperature of the solder paste 300 is higher than the melting temperature of the first protective layer 160 and the second protective layer 170. On the other hand, when the package cup 120 is a thermoplastic material, the melting temperature of the package cup 120 is higher than the melting temperature of the solder paste 300. In this way, when the light-emitting module 100 is performing the reflow process, the reflow temperature can be set between the solder paste 300 and the melting temperature of the package body 120, so that the first protective layer 160 and the second protective layer 170 are The solder paste 300 is in a liquid state, and the package cup 120 is in a solid state. Therefore, the first protective layer 160 and the second protective layer 170 can respectively achieve the effects of protecting the first wire 140 and the second wire 150 to reduce the probability of deformation, desoldering or wire breakage of the first wire 140 and the second wire 150.

接著請參照第3圖,其繪示本發明另一實施方式之發光模組400的剖面圖。發光模組400包含第二導線架410、封裝杯體420、第二發光二極體430、第三導線440、第三保護層460與封裝膠480。第二導線架410包含彼此分離之第三導電部412與第四導電部414,且第四導電部414上具有預定的固晶區I。封裝杯體420包覆部份第二導線架410,並且形成裸露出預定的固晶區I表面之凹陷孔洞422。第二發光二極體430具有一正面436以及一相對於正面436之背面438。正面436具有第三電極432,而背面438具有第四電極434,而第二發光二極體430之背面438則固著於固晶區I上,且第四電極434與第四導電部414電性連接。 換言之,第二發光二極體430為一垂直式發光二極體(Vertical chip)。第三導線440電性連接於第三導電部412與第三電極432之間。第三保護層460包覆第三導線440。封裝膠480填入置於凹陷孔洞422內,並覆蓋第二發光二極體430及被第三保護層460所包覆的第三導線440。 Referring to FIG. 3, a cross-sectional view of a light emitting module 400 according to another embodiment of the present invention is shown. The light emitting module 400 includes a second lead frame 410, a package cup 420, a second light emitting diode 430, a third wire 440, a third protective layer 460, and an encapsulant 480. The second lead frame 410 includes a third conductive portion 412 and a fourth conductive portion 414 that are separated from each other, and the fourth conductive portion 414 has a predetermined solid crystal region I thereon. The package cup 420 covers a portion of the second lead frame 410 and forms a recessed hole 422 that exposes a predetermined surface of the solid crystal region I. The second LED 430 has a front side 436 and a back side 438 opposite the front side 436. The front surface 436 has a third electrode 432, and the back surface 438 has a fourth electrode 434, and the back surface 438 of the second LED 430 is fixed on the solid crystal region I, and the fourth electrode 434 and the fourth conductive portion 414 are electrically connected. Sexual connection. In other words, the second light emitting diode 430 is a vertical light emitting diode. The third wire 440 is electrically connected between the third conductive portion 412 and the third electrode 432. The third protective layer 460 covers the third wire 440. The encapsulant 480 is filled in the recessed hole 422 and covers the second LED 430 and the third conductor 440 covered by the third protection layer 460.

在本實施方式中,第三保護層460包覆第三導線440,也就是說,至少部份之第三導線440不與封裝膠480直接接觸。因此即使當封裝膠480處於高低溫變化而產生內部應力時,第三保護層460也能夠幫助吸收封裝膠480的應力,即成為封裝膠480與第三導線440之間的緩衝,以減少第三導線440產生變形、脫焊或者斷線的機率。 In the present embodiment, the third protective layer 460 covers the third wire 440, that is, at least a portion of the third wire 440 is not in direct contact with the encapsulant 480. Therefore, even when the encapsulant 480 is subjected to high and low temperature changes to generate internal stress, the third protective layer 460 can help absorb the stress of the encapsulant 480, that is, become a buffer between the encapsulant 480 and the third lead 440, thereby reducing the third. The wire 440 is subject to deformation, desoldering, or the probability of wire breakage.

詳細而言,第三保護層460可為熱塑型塑膠,其具有一熔點溫度。在一加熱情況下(例如於發光模組400之冷熱衝擊測試),若發光模組400的加熱溫度高於第三保護層460之熔點溫度,則第三保護層460成為液態。而因封裝膠480與第三導線440之間的熱膨脹係數通常不匹配,因此在發光模組400加熱當下,液態的第三保護層460即可作為封裝膠480與第三導線440之間形變的緩衝,藉由吸收封裝膠480與第三導線440的內部應力,以減少第三導線440受到封裝膠480之應力的影響,進而產生變形、脫焊或者斷線的機率。 In detail, the third protective layer 460 may be a thermoplastic type plastic having a melting point temperature. In a heating condition (for example, in the thermal shock test of the light-emitting module 400), if the heating temperature of the light-emitting module 400 is higher than the melting temperature of the third protective layer 460, the third protective layer 460 becomes a liquid. The thermal expansion coefficient between the encapsulant 480 and the third lead 440 is generally mismatched. Therefore, when the illumination module 400 is heated, the liquid third protective layer 460 can be deformed between the encapsulant 480 and the third lead 440. The buffering, by absorbing the internal stress of the encapsulant 480 and the third wire 440, reduces the influence of the stress of the third wire 440 on the encapsulant 480, thereby causing deformation, desoldering or wire breakage.

在一或多個實施方式中,上述之熱塑型塑膠之材質可為聚碳酸酯(PC)、聚乙烯(PE)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚對苯二甲酸1,4環己 二甲醇酯(PCT)、聚丙烯(PP)、尼龍(Nylon)其中之一或其組合。而熱塑型塑膠可例如先加熱至液態,之後再以注射方式分別滴在第三導線440上以形成第三保護層460。為了增加熱塑型塑膠於第三導線440的附著度,液態的熱塑型塑膠與第三導線440之間的接觸角可選擇小於90度,然而本發明不以此為限。 In one or more embodiments, the thermoplastic plastic material may be polycarbonate (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate. Diester (PBT), polybutylene terephthalate 1,4 ring One or a combination of dimethanol ester (PCT), polypropylene (PP), nylon (Nylon). The thermoplastic plastic can be heated, for example, to a liquid state, and then dropped onto the third wire 440 by injection to form a third protective layer 460. In order to increase the adhesion of the thermoplastic plastic to the third wire 440, the contact angle between the liquid thermoplastic plastic and the third wire 440 may be selected to be less than 90 degrees, but the invention is not limited thereto.

在一或多個實施方式中,熱塑型塑膠內更包含複數散射粒子462。當第二發光二極體430所發出之光束打至散射粒子462時,散射粒子462能夠增加其光束之散射程度,以增加發光模組400整體光束的熱溫均勻性。 In one or more embodiments, the thermoplastic plastic further comprises a plurality of scattering particles 462. When the light beam emitted by the second light-emitting diode 430 hits the scattering particles 462, the scattering particles 462 can increase the degree of scattering of the light beam to increase the thermal temperature uniformity of the overall light beam of the light-emitting module 400.

在一或多個實施方式中,散射粒子462的材質可為二氧化鈦(TiO2)、二氧化矽(SiO2)、氧化鋅(ZnO)、氧化鋁(Al2O3)其中之一或其組合。因散射粒子462的材質通常具高折射率,因此散射粒子462亦具有提升反射率的效果。而藉由調整散射粒子462於熱塑型塑膠內的比例,可增加發光模組400之出光效率。 In one or more embodiments, the material of the scattering particles 462 may be one of titanium dioxide (TiO 2 ), cerium oxide (SiO 2 ), zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), or a combination thereof. . Since the material of the scattering particles 462 generally has a high refractive index, the scattering particles 462 also have an effect of improving the reflectance. By adjusting the ratio of the scattering particles 462 in the thermoplastic plastic, the light extraction efficiency of the light emitting module 400 can be increased.

在一或多個實施方式中,封裝膠480及/或熱塑型塑膠(即第三保護層460)內更包含複數波長轉換粒子482。例如在第3圖中,封裝膠480與熱塑型塑膠中皆包含波長轉換粒子482,然而在其他的實施方式中,波長轉換粒子482亦可僅分佈於封裝膠480與熱塑型塑膠其中一者內,本發明不以此為限。當第二發光二極體430所發出之光束打至波長轉換粒子482時,波長轉換粒子482可轉換光束之波長,因此光束之光色便可被改變。波長轉換粒子482例 如為螢光粉或量子點,本發明不以此為限。 In one or more embodiments, the encapsulant 480 and/or the thermoplastic (ie, the third protective layer 460) further includes a plurality of wavelength converting particles 482. For example, in the third embodiment, both the encapsulant 480 and the thermoplastic plastic include the wavelength converting particles 482. However, in other embodiments, the wavelength converting particles 482 may be distributed only in the encapsulant 480 and the thermoplastic plastic. The invention is not limited thereto. When the light beam emitted by the second light-emitting diode 430 hits the wavelength-converting particles 482, the wavelength-converting particles 482 can convert the wavelength of the light beam, so that the light color of the light beam can be changed. 482 wavelength conversion particles In the case of fluorescent powder or quantum dots, the invention is not limited thereto.

值得一提的是,在一實施方式中,若發光模組400同時包含散射粒子462與波長轉換粒子482,則因散射粒子462具有散射光線的效果,亦即散射粒子462能夠散射轉換光色後之光束,因此波長轉換粒子482的數量可相對減少,以減少發光模組400的成本。 It is worth mentioning that, in an embodiment, if the light-emitting module 400 includes the scattering particles 462 and the wavelength-converting particles 482 at the same time, the scattering particles 462 have the effect of scattering light, that is, the scattering particles 462 can scatter the converted color. The light beam, and thus the number of wavelength converting particles 482, can be relatively reduced to reduce the cost of the light emitting module 400.

在本實施方式中,封裝杯體420之材質可為熱塑性塑膠或者熱固性塑膠,且其材質具有大於80%的反射率,以協助將第二發光二極體430所發出之光束反射至發光模組400的出光面402。當封裝杯體420之材質為熱塑性塑膠時,其材質可為聚碳酸酯(PC)、聚乙烯(PE)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚對苯二甲酸1,4環己二甲醇酯(PCT)、聚丙烯(PP)、尼龍(Nylon)其中之一或其組合,但封裝杯體420的熔點溫度高於第三保護層460的熔點溫度。而當封裝杯體420之材質為熱固性塑膠時,其材質可為矽氧樹脂(Silicone)、環氧樹脂(Epoxy)、丙烯酸脂(Acrylate)、Adamanda其中之一或其組合。另外,封裝膠480的材質亦可為熱固性塑膠,例如矽氧樹脂(Silicone)、環氧樹脂(Epoxy)、丙烯酸脂(Acrylate)、Adamanda其中之一或其組合。而第三導線440的材質可為導電性材料,例如金、銀、銅或鋁。 In this embodiment, the material of the package cup 420 may be a thermoplastic plastic or a thermosetting plastic, and the material has a reflectance greater than 80% to assist in reflecting the light beam emitted by the second LED 430 to the light emitting module. The light exit surface 402 of 400. When the material of the package cup 420 is thermoplastic, the material may be polycarbonate (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate ( PBT), one or a combination of polytetramethylene terephthalate (PCT), polypropylene (PP), nylon (Nylon), but the melting temperature of the package cup 420 is higher than the third protection The melting point temperature of layer 460. When the material of the package cup 420 is a thermosetting plastic, the material may be one of a silicone resin, an epoxy resin (Epoxy), an acrylate (Acrylate), an Adamanda, or a combination thereof. In addition, the material of the encapsulant 480 may also be a thermosetting plastic such as one of Silicone, Epoxy, Acrylate, Adamanda or a combination thereof. The material of the third wire 440 may be a conductive material such as gold, silver, copper or aluminum.

接著請參照第4圖,其繪示本發明另一實施方式之發光裝置的剖面圖。發光裝置包含基板200、發光模組400以及錫膏300。錫膏300經由回焊方式使發光模組400被固 定於基板200上。錫膏300之熔點溫度係高於第三保護層460之熔點溫度。另一方面,當封裝杯體420為熱塑性材質時,封裝杯體420的熔點溫度高於錫膏300的熔點溫度。如此一來,當發光模組400在進行回焊製程時,其回焊溫度可設定於錫膏300與封裝杯體420之熔點溫度之間,使得第三保護層460與錫膏300皆處於液態,而封裝杯體420則處於固態。因此第三保護層460可達到保護第三導線440的效果,以減少第三導線440產生變形、脫焊或者斷線的機率。 Next, please refer to FIG. 4, which is a cross-sectional view showing a light-emitting device according to another embodiment of the present invention. The light emitting device includes a substrate 200, a light emitting module 400, and a solder paste 300. The solder paste 300 is solidified by the reflow soldering method It is fixed on the substrate 200. The melting temperature of the solder paste 300 is higher than the melting temperature of the third protective layer 460. On the other hand, when the package cup 420 is a thermoplastic material, the melting temperature of the package cup 420 is higher than the melting temperature of the solder paste 300. In this way, when the light-emitting module 400 is performing the reflow process, the reflow temperature can be set between the solder paste 300 and the melting temperature of the package cup 420, so that the third protective layer 460 and the solder paste 300 are both in a liquid state. And the package cup 420 is in a solid state. Therefore, the third protective layer 460 can achieve the effect of protecting the third wire 440 to reduce the probability of deformation, desoldering, or wire breakage of the third wire 440.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

100‧‧‧發光模組 100‧‧‧Lighting module

102‧‧‧出光面 102‧‧‧Glossy surface

110‧‧‧第一導線架 110‧‧‧First lead frame

112‧‧‧第一導電部 112‧‧‧First Conductive Department

114‧‧‧第二導電部 114‧‧‧Second Conductive Department

120‧‧‧封裝杯體 120‧‧‧Package cup

122‧‧‧凹陷孔洞 122‧‧‧Concave holes

130‧‧‧第一發光二極體 130‧‧‧First LED

132‧‧‧第一電極 132‧‧‧First electrode

134‧‧‧第二電極 134‧‧‧second electrode

136‧‧‧正面 136‧‧‧ positive

138‧‧‧背面 138‧‧‧ back

140‧‧‧第一導線 140‧‧‧First wire

150‧‧‧第二導線 150‧‧‧second wire

160‧‧‧第一保護層 160‧‧‧First protective layer

162‧‧‧散射粒子 162‧‧‧scattering particles

170‧‧‧第二保護層 170‧‧‧Second protective layer

180‧‧‧封裝膠 180‧‧‧Package

182‧‧‧波長轉換粒子 182‧‧‧ wavelength conversion particles

I‧‧‧固晶區 I‧‧‧ Gujing District

Claims (14)

一種發光模組,包含:一第一導線架,包含彼此分離之一第一導電部與一第二導電部,且該第二導電部上具有一預定的固晶區;一封裝杯體,包覆部份該第一導線架,並且形成一裸露出該預定的固晶區表面之凹陷孔洞;一第一發光二極體,具有一正面以及一相對於該正面之背面,且該正面上具有彼此分離的一第一電極以及一第二電極,而該第一發光二極體之該背面則固著於該固晶區上;一第一導線,電性連接於該第一導電部與該第一電極之間;一第二導線,電性連接於該第二導電部與該第二電極之間;一第一、第二保護層,分別包覆該第一、第二導線;以及一封裝膠,填入置於該凹陷孔洞內,並覆蓋該第一發光二極體及被該第一、第二保護層所包覆的該第一、第二導線。 A light-emitting module includes: a first lead frame comprising a first conductive portion and a second conductive portion separated from each other, and the second conductive portion has a predetermined solid crystal region; a package cup, package Covering a portion of the first lead frame and forming a recessed hole exposing a surface of the predetermined solid crystal region; a first light emitting diode having a front surface and a back surface opposite to the front surface, and having a front surface a first electrode and a second electrode separated from each other, and the back surface of the first LED is fixed on the die bonding region; a first wire electrically connected to the first conductive portion and the a first wire is electrically connected between the second conductive portion and the second electrode; a first and a second protective layer respectively covering the first and second wires; and a first wire The encapsulant is filled in the recessed hole and covers the first LED and the first and second wires covered by the first and second protective layers. 如請求項1所述之發光模組,其中該第一、第二保護層係熱塑型塑膠。 The lighting module of claim 1, wherein the first and second protective layers are thermoplastic plastics. 如請求項2所述的發光模組,其中該熱塑型塑膠之材 質為聚碳酸酯(PC)、聚乙烯(PE)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚對苯二甲酸1,4環己二甲醇酯(PCT)、聚丙烯(PP)、尼龍(Nylon)其中之一或其組合。 The lighting module of claim 2, wherein the thermoplastic plastic material Polycarbonate (PC), polyethylene (PE), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polytetramethylene terephthalate One or a combination of methanol ester (PCT), polypropylene (PP), nylon (Nylon). 如請求項3所述的發光模組,其中該熱塑型塑膠內更包含複數散射粒子。 The illuminating module of claim 3, wherein the thermoplastic plastic body further comprises a plurality of scattering particles. 如請求項4所述的發光模組,其中該些散射粒子的材質為二氧化鈦(TiO2)、二氧化矽(SiO2)、氧化鋅(ZnO)、氧化鋁(Al2O3)其中之一或其組合。 The illuminating module of claim 4, wherein the scattering particles are made of one of titanium dioxide (TiO 2 ), cerium oxide (SiO 2 ), zinc oxide (ZnO), and aluminum oxide (Al 2 O 3 ). Or a combination thereof. 如請求項5所述之發光模組,其中該封裝膠及/或該熱塑型塑膠內更包含複數波長轉換粒子。 The light emitting module of claim 5, wherein the encapsulant and/or the thermoplastic plastic further comprises a plurality of wavelength converting particles. 一種發光裝置,包含有:一基板;一如請求項1至6中任一項所述之發光模組;以及一錫膏,經由回焊方式使該發光模組被固定於該基板上,其中該錫膏之熔點溫度係高於該第一、第二保護層之熔點溫度。 A light-emitting device, comprising: a substrate; the light-emitting module according to any one of claims 1 to 6; and a solder paste, wherein the light-emitting module is fixed on the substrate by reflow soldering, wherein The solder paste has a melting point temperature higher than a melting point temperature of the first and second protective layers. 一種發光模組,包含:一第二導線架,包含彼此分離之一第三導電部與一第 四導電部,且該第四導電部上具有一預定的固晶區;一封裝杯體,包覆部份該第二導線架,並且形成一裸露出該預定的固晶區表面之凹陷孔洞;一第二發光二極體,具有一正面以及一相對於該正面之背面,其中該正面具有一第三電極,而該背面具有一第四電極,而該第二發光二極體之該背面則固著於該固晶區上,且該第四電極與該第四導電部電性連接;一第三導線,電性連接於該第三導電部與該第三電極之間;一第三保護層,包覆該第三導線;以及一封裝膠,填入置於該凹陷孔洞內,並覆蓋該第二發光二極體及被該第三保護層所包覆的該第三導線。 A lighting module comprising: a second lead frame comprising a third conductive portion and a first a fourth conductive portion having a predetermined solid crystal region; a package cup covering the portion of the second lead frame and forming a recessed hole exposing the surface of the predetermined solid crystal region; a second light emitting diode having a front surface and a back surface opposite to the front surface, wherein the front surface has a third electrode, and the back surface has a fourth electrode, and the back surface of the second light emitting diode body Fixing on the solid crystal region, and the fourth electrode is electrically connected to the fourth conductive portion; a third wire electrically connected between the third conductive portion and the third electrode; a third protection a layer covering the third wire; and an encapsulant filled in the recessed hole and covering the second light emitting diode and the third wire covered by the third protective layer. 如請求項8所述之發光模組,其中該第三保護層係熱塑型塑膠。 The lighting module of claim 8, wherein the third protective layer is a thermoplastic plastic. 如請求項9所述的發光模組,其中該熱塑型塑膠之材質為聚碳酸酯(PC)、聚乙烯(PE)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚對苯二甲酸1,4環己二甲醇酯(PCT)、聚丙烯(PP)、尼龍(Nylon)其中之一或其組合。 The illuminating module of claim 9, wherein the thermoplastic plastic material is polycarbonate (PC), polyethylene (PE), polyethylene terephthalate (PET), polyterephthalic acid. One or a combination of butylene diester (PBT), polytetramethylene terephthalate (PCT), polypropylene (PP), nylon (Nylon). 如請求項10所述的發光模組,其中該熱塑型塑膠內更包含複數散射粒子。 The illuminating module of claim 10, wherein the thermoplastic plastic further comprises a plurality of scattering particles. 如請求項11所述的發光模組,其中該些散射粒子的材質為二氧化鈦(TiO2)、二氧化矽(SiO2)、氧化鋅(ZnO)、氧化鋁(Al2O3)其中之一或其組合。 The illuminating module of claim 11, wherein the scattering particles are made of one of titanium dioxide (TiO 2 ), cerium oxide (SiO 2 ), zinc oxide (ZnO), and aluminum oxide (Al 2 O 3 ). Or a combination thereof. 如請求項12所述之發光模組,其中該封裝膠及/或該熱塑型塑膠內更包含複數波長轉換粒子。 The lighting module of claim 12, wherein the encapsulant and/or the thermoplastic plastic further comprises a plurality of wavelength converting particles. 一種發光裝置,包含有:一基板;一如請求項8至13中任一項所述之發光模組;以及一錫膏,經由回焊方式使該發光模組被固定於該基板上,其中該錫膏之熔點溫度係高於該第三保護層之熔點溫度。 A light-emitting device, comprising: a substrate; the light-emitting module according to any one of claims 8 to 13; and a solder paste, wherein the light-emitting module is fixed on the substrate by reflow soldering, wherein The solder paste has a melting point temperature higher than a melting point temperature of the third protective layer.
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