CN104507641A - Polishing pad and method for manufacturing same - Google Patents
Polishing pad and method for manufacturing same Download PDFInfo
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- CN104507641A CN104507641A CN201380025329.7A CN201380025329A CN104507641A CN 104507641 A CN104507641 A CN 104507641A CN 201380025329 A CN201380025329 A CN 201380025329A CN 104507641 A CN104507641 A CN 104507641A
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- polishing layer
- polishing
- fine particles
- polishing pad
- organic fine
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
- B24D3/16—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings for close-grained structure, i.e. of high density
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
- B24D11/003—Manufacture of flexible abrasive materials without embedded abrasive particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
According to the present invention, the method for manufacturing a polishing pad by mixing a polishing layer forming material and solidifying the material through a chemical reaction includes: a step of forming micro organic particles by pulverizing an organic material using a physical method; a step of mixing the micro organic particles formed in the above step with the polishing layer forming material; a step of forming gaseous pores by mixing the mixture obtained in the above step with a pore size-controllable inert gas, a capsule-type foaming agent, or a chemical foaming agent; a step of producing a polishing layer by gelating and curing the mixture obtained in the above step; and a step of distributing the pores through the opening of the gaseous pores on a surface by processing the polishing layer.
Description
Technical field
The present invention relates to a kind of polishing pad and manufacture method thereof, more specifically, relate to a kind of polishing pad and the manufacture method thereof that comprise pore, polishing fluid (polishing slurry) can effectively be collected and supply to described polishing pad.
Background technology
Chemical-mechanical planarization/polishing (CMP) technique in worldwide for the complanation of semiconductor devices, and because of have increase wafer diameter, high integration, micro-live width and Miltilayer wiring structure tendency and become important.
In a cmp process, the polishing velocity of wafer and flatness are very important, and the performance of this CMP depend on CMP equipment condition and as the polishing fluid of attrition component and the performance of polishing pad.Specifically, polishing pad can, to supply polishing fluid with the state of wafer surface contact, to make it be dispersed on wafer equably, thus make the protrusion of abrasive particle and the polishing pad comprised in polishing fluid cause physical friction.
In this case, the pad interface of direct contact wafer needs to soak into polishing fluid, to make polishing fluid smooth flow.About this point, United States Patent (USP) 5,578, has disclosed the technology forming micro-cave (micro holes) (such as, hole (pores)) in pad interface in No. 362 grades.
In this fashion, it is highly important that and keep pad interface polishing fluid to soak into, thus improve polishing pad effect in a cmp process and performance.Therefore, the groove of various shape can being formed in polishing pad, to form larger liquid stream, and in pad interface, forming micro-cave by opening above-mentioned poromerics.
But, when forming hole by introducing micro-liquid composition (liquid microelements), there is the advantage that stably can form hole and reduce CMP temperature.But, also there is following shortcoming: micro-liquid composition is in liquid state, a small amount of micro-liquid composition thus in CMP process, will be revealed.
Due to the development of CMP, by introducing fine additive in polishing fluid, to control the trial of multiple event just increasing.Therefore, need in polishing pad, to enter the additive material that may affect CMP.Only form pure hole as a kind of and do not make additive material enter method in polyurethane matrix, the introducing of pore receives publicity.
It possesses following advantage: pore pad does not have the discharge material that possibility affects CMP.But, in pore pad, pore is not easy to control, and thus manufacturing process should be optimized.And, also there will be following problem.
First, when the polyurethane matrix by gas directly being injected formation polishing pad or when forming hole by introducing blowing agent, size and the density of accurate control hole is difficult to.Specifically, compared with additive method, be not easy to manufacture the hole with the size uniformity being less than 50 μm.
Secondly, when not changing polyurethane matrix composition, be very difficult to the size and the density that change hole.
3rd, in pure polyurethane matrix, can not rub smoothly when repairing owing to using diamond disk, therefore occur such as may making the phenomenons such as the hole glazing (pore glazing) of hole plug.
Summary of the invention
The invention provides a kind of polishing pad and manufacture method thereof, the advantage that chemical-mechanical planarization/polishing (CMP) that described polishing pad can be maintained by introducing stomatal limiting value loose structure (porosity) is padded, and can solve or improve above-mentioned FAQs.
According to an aspect of the present invention, provide a kind of manufacture method of polishing pad, pass through the method, polishing layer formation material is made to mix the solidification of merga pass chemical reaction, thus manufacture polishing pad, described method comprises: (a) adopts Physical to grind organic material to form organic fine particles (micro-organic particle); B the organic fine particles formed in (a) mixes with polishing layer formation material by (); C () will be selected from by can at least one in the group that forms of the inert gas of control hole size, capsule-type blowing agent and CBA mix with the mixture in (b), to form pore; D () carries out gelation and sclerosis, to form polishing layer to the mixture generated in (c); (e) processing this polishing layer, being distributed in polishing layer on the surface to make the perforate limited by opening pore.
According to another aspect of the present invention, provide a kind of manufacture method of polishing pad, pass through the method, polishing layer formation material is made to mix the solidification of merga pass chemical reaction, thus manufacture polishing pad, described method comprises: (a) makes to comprise organic fine particles formation monomer in polishing layer formation material, and by making monomer polymerization after stirring, forming organic fine particles and making it disperse; B () will be selected from by can at least one in the group that forms of the inert gas of control hole size, capsule-type blowing agent and CBA mix with the mixture in (a), to form pore; C () carries out gelation and sclerosis, to form polishing layer to the mixture generated in (b); (d) processing this polishing layer, being distributed in polishing layer on the surface to make the perforate limited by opening pore.
According to another aspect of the present invention, provide a kind of polishing pad, described polishing pad carries out polishing process by moving with the contact of polishing subject surface, described polishing pad comprises polishing layer, wherein, described polishing layer comprises: at least one in the organic fine particles formed by physical grinding organic material and the organic fine particles formed by the chemical polymerization of monomer; With the pore that at least one by being selected from the group that is made up of inert gas, capsule-type blowing agent and CBA is formed, and the perforate limited by opening pore is distributed in polishing layer on the surface.
Accompanying drawing explanation
Describe illustrative embodiments of the present invention in detail by referring to accompanying drawing, make above-mentioned and other feature and advantage of the present invention will be more obvious to those skilled in the art, in accompanying drawing:
Fig. 1 is the sectional view of the polishing pad of an embodiment of the invention;
Fig. 2 is the schematic diagram of the polissoir it having been installed the polishing pad shown in Fig. 1;
Fig. 3 (a) and 3 (b) are the diagrams of the organic fine particles comprised in the polishing layer shown in Fig. 1;
Whether Fig. 4 (a) and 4 (b) comprise organic fine particles to compare polishing layer surface and the photo that obtains in the polishing layer according to Fig. 1;
Fig. 5 and 6 is the flow charts of the method that the polishing layer manufacturing polishing pad is according to an illustrative embodiment of the invention described;
Fig. 7 is that display uses diamond disk to the diagram of the surface roughness of pad interface polishing after 10 minutes of Fig. 1; With
Fig. 8 evaluates 5 hours with after checking frictional behaviour carrying out long-time polishing, surface roughness during by comparing surface roughness when introducing organic fine particles and not introducing organic fine particles and the photo that obtains.
Detailed description of the invention
Describe the present invention more fully below with reference to accompanying drawings, in accompanying drawing, show illustrative embodiments of the present invention.
Fig. 1 is the sectional view of the polishing pad 100 of an embodiment of the invention.
As shown in Figure 1, the polishing pad 100 of embodiments of the present invention comprises supporting layer 110 and polishing layer 120.Supporting layer 110 for polishing pad 100 is fixed on platen 3, as shown in Figure 3.Supporting layer 110 is made up of the material with stability, to tackle extruding silicon wafer 7 (namely, polishing object) power, silicon wafer 7 is carried in head 5 place towards platen 3, makes supporting layer 110 to be formed at the polishing layer 120 on supporting layer 110 relative to the homogeneous elasticity support of silicon wafer 7.Therefore, supporting layer 110 primarily of non-porous, solid and the homogeneous material of elasticity make, and the polishing layer 120 that its hardness ratio supporting layer 110 is formed is low.
In addition, supporting layer 110 be transparent or semitransparent at least partially, can through supporting layer 110 to be used in the light beam 170 detecting polishing subject surface flatness.In figure 3, polishing to as if there is metal or the insulating barrier silicon wafer 7 as polishing layer.But, polishing object also can be various substrate, as it formed the substrate of Thin Film Transistor-LCD (TFT-LCD), glass substrate, ceramic substrate and polymer plastic substrate.In addition, polishing pad 100 can manufacture when not comprising supporting layer 110.
In addition, although polishing pad 100 has as shown in Figure 2 be suitable for the round-shaped of rotary-type polissoir 1, polishing pad 100 can change into various shape according to the shape of polissoir 1, as rectangular shape and square shape.
As shown in Figure 2, polishing layer 120 directly contacts the silicon wafer 7 as polishing object.Polishing layer 120 or can make its chemical bond and be formed by the predetermined polishing layer formation material of mixing.
Herein, the material of the macromolecule matrix 130 formed with material is formed by polishing layer 120, namely macromolecule matrix 130 formation material, can comprise at least one be selected from by the group of polyurethane, polyethers, polyester, polysulfones, polyacrylic, Merlon, polyethylene, polymethyl methacrylate, polyvinyl acetate, polyvinyl chloride, polymine, polyether sulfone, PEI, polyketone, melamine, nylon, fluorohydrocarbon or combinations thereof.
As the instantiation of macromolecule matrix 130, polyurethane can be obtained by the dual liquid type low-viscosity (mobile) liquid carbamate comprising isocyanate prepolymer and curing agent.Prepolymer as final polymer precursor comprises oligomer or monomer.Isocyanate prepolymer has average more than 2 isocyanate functional groups, and the content of reactive isocyanate is 4 weight portion ~ 16 weight portions, and can by obtaining as the reaction between the polyalcohols such as polyethers, polyester (polyesther) or polytetramethylene glycol and toluene di-isocyanate(TDI) or '-diphenylmethane diisocyanate, and isocyanate prepolymer can react with the curing agent with isocyanate reacting group, and finally can form polyurethane.Herein, can use based on the various polyalcohol of amine or polyethers and polyester, if 4,4-methylene-bis-(2-chloroaniline) (hereinafter referred to MOCA) is as curing agent.The material character of polyurethane can be adjusted by the various combinations of component.
In this fashion, form the macromolecule matrix 130 of polishing layer 120 and be made up of various well-known components, thus will omit further describing of well known materials and forming materials.
The forming process of polishing layer 120 can comprise: casting mold operation, and wherein polyurethane prepolymer and curing agent are mixed with each other, and are injected in mould, and makes liquid charging stock chemosetting; Split operation, wherein curing materials cuts according to application target; With fluting operation, wherein in cutting mat, form fluid course.In the present invention, principal character is the material category of injecting in the casting mold operation of these operations, to make to comprise certain material in polishing layer 120.
Specifically, in polishing layer 120 of the present invention, comprise organic fine particles, in addition, in polishing layer 120, also can comprise hole 141 and 142.
Herein, organic fine particles can be the particle that the particle that formed by following copolymer or its composite material are formed, and described copolymer can be made by being mixed for manufacturing thermoplastic resin particle, the monomer of thermosetting resin particles and polymer.
Namely, organic fine particles can comprise at least one in the group being selected from and being made up of polyvinyl resin, acrylic resin, polystyrene resin, Corvic, polyamide, acrylic resin, polyurethane resin, polycarbonate resin, phenolic resins, amino resins, epoxy resin, Lauxite, mylar, rubber acrylonitrile-BS (ABS) and SAN (SAN).
Can mainly use two kinds of methods (Physical and chemical method) that organic fine particles is included in polishing layer 120.
According to Physical, can make mechanically to grind organic material to form organic fine particles, then organic fine particles can be mixed with polishing layer 120 formation material.
According to chemical method, organic fine particles formation monomer can be made to be included in polishing layer 120 formation material, and can by making corresponding monomer polymerization form organic fine particles and make its homogeneous dispersion after agitating procedure.
The state comprising organic fine particles in polishing layer 120 formation material is shown in Fig. 3.
Fig. 3 (a) is the photomacrograph of organic fine particles, and Fig. 3 (b) is the magnification at high multiple photo of organic fine particles.
The hole 141 comprised in polishing pad 100 and 142 can be the hole that its size can be controlled by least one be selected from the group that become to be grouped into by inert gas, capsule-type blowing agent, CBA and micro-liquid.
Herein, micro-liquid composition is formed by fluent material, described fluent material is incompatible with the macromolecule matrix 130 forming polishing layer 120, that is, it is be selected from the material do not had by Aliphatic mineral oils, aromatic mineral oil, its molecular end in the group of the silicone oil, soybean oil, coconut oil, palm oil, cottonseed oil, camellia oil, fixed oil or combinations thereof of hydroxyl.
Micro-liquid composition can be dispersed in macromolecule matrix 130 with microspheroidal.Average ball diameter can be 1 μm ~ 50 μm, such as 10 μm ~ 40 μm.The collection of the sphere diameter optimum polishing fluid 13 in above-mentioned scope and supply.But sphere diameter can change according to the kind of polishing fluid 13, and thus the size of micro-liquid composition also can change.
The kind in hole 141 and 142 can be different from each other because of the formation method in hole 141 and 142.Such as, hole 141 and 142 is formed by injection inert gas, capsule-type blowing agent or CBA.
Herein, inert gas can be valence state be 0 chemically stable gas, that is, helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) or radon (Rn).In addition, except 0 race's element in the periodic table of elements, inert gas can also be any gas do not reacted with macromolecule matrix 130, that is, it does not participate in urethane reaction, as N2 etc.
Blowing agent and predetermined material mix merga pass and evaporate or add thermal response and produce a large amount of bubble, and it can mainly be divided into CBA and physical blowing agent.
In CBA, foam and to carry out with carbon dioxide, carbon dioxide reacts with water by utilizing the activity of isocyanate groups (vitality) and generates, and therefore blowing agent uses water.In physical blowing agent, bubble is by injected gas or utilize decomposability or vapo(u)rability blowing agent to produce reaction heat and formed, and therefore physical blowing agent does not participate in polymerization.The Species and characteristics of these blowing agents is known, therefore will omit detailed description.
Hole 141 and 142 is formed on polishing layer 120 by mixed inert gas or various blowing agent (capsule-type blowing agent or CBA).The sectional view that the different hole 141 that controlled by multiple method and 142, Fig. 1 are the polishing pads 100 comprising multiple hole 141 and 142 can be comprised in polishing pad 100.
As mentioned above, whether Fig. 4 (a) and 4 (b) comprise organic fine particles to compare the sectional view of the polishing pad 100 comprising hole 141 and 142 and the photo that obtains in polishing layer 120 according to Fig. 1.
Namely, Fig. 4 (a) shows in polishing layer 120 state of distribution of pores on polishing pad 100 surface when not introducing (comprising) organic fine particles, and Fig. 4 (b) shows in polishing layer 120 state of distribution of pores on polishing pad 100 surface when introducing (comprising) organic fine particles.In Fig. 4 (a) and 4 (b), other conditions for the formation of polishing pad 100 (as formed the conditions such as the temperature and time of the combined material of polishing pad 100) beyond organic fine particles are identical.
As shown in Fig. 4 (a) compares with the photo of 4 (b), when forming polishing pad 100 by including microparticle, the distribution in hole is more fine and close.
In casting mold operation, the undiluted solution of polyurethane can collecting gas orifice needs to have proper viscosity and casting machine needs to have sufficient stirring capacity, thus can stably form homogeneous aperture when gas or blowing agent are injected polyurethane matrix.Because the viscosity of most of polyurethane stock solutions that uses in prior art is lower than level when stably can collect gas, therefore the gas flow of discharging in air is greater than the gas flow kept in polyurethane, thus overall porosity is reduced, be thus difficult to form undersized hole.
But, as shown in embodiments of the present invention, (comprising) organic fine particles is introduced in the undiluted solution of polyurethane prepolymer, the viscosity of undiluted solution is increased because of the interaction between organic fine particles and polyurethane, and this contributes to forming homogeneous aperture and obtaining sufficiently high porosity.
In addition, even if the composition of polyurethane matrix does not change because of the adjustment of organic fine particles content, also can the size of adjusting hole and voidage.
Below, the manufacture method of the polishing layer 120 of the polishing pad 100 of embodiment of the present invention is described with reference to Fig. 5.
First, adopt Physical grinding organic material and form organic fine particles (S100), organic fine particles is mixed (S110) with polishing layer 120 formation material.Specifically, above-mentioned macromolecule matrix 130 formation material is mixed (S110) with the organic fine particles through grinding.
In mixed processes, such as the inert gases such as Ar (or replacing the predetermined blowing agent of inert gas) are mixed (S120) with macromolecule matrix 130 formation material.
The combined amount of inert gas can adjust according to the size intending the hole formed depending on its kind.
Subsequently, gelation and sclerosis (S130) is carried out.Namely, mixture is injected the mold with predetermined shape, be then cured by gelation and sclerosis.Gelation carries out 5 minutes ~ 30 minutes at 80 DEG C ~ 90 DEG C, is hardened in 80 DEG C ~ 120 DEG C and carries out 20 hours ~ 24 hours.But, processing temperature and time can carry out different changes, to provide optimum condition.
Finally, the hardening structure body with predetermined shape of gained is processed (S140).Resulting structures body by taking out from mold, cutting, surface treatment and cleaning process.First, the resulting structures body of sclerosis is taken out from mold, and carry out cutting that there is predetermined thickness and shape.Clearly, polishing layer 120 can utilize any method to be formed as sheet, and described method is such as known casting mold in polymer sheet manufacture field or extrude, to boost productivity.The groove of various shape can be formed on polishing layer 120 surface, can supply equably on the whole working surface of polishing layer 120 to make polishing fluid 13.
Polishing layer 120 completes after carrying out cleaning process.In cleaning process process, polishing layer 120 surface gush out expose hole 141, make perforate 141 ' and 142 ' be distributed on polishing layer surface 160 thus.
Polishing pad 100 can be only made up of polishing layer 120.But, if desired, the method be widely known by the people in polishing pad 100 manufacture field can be utilized to manufacture supporting layer 110, and itself and polishing layer 120 are combined, to complete polishing pad 100.
Fig. 6 describes the method for the polishing layer 120 manufacturing polishing pad 100 according to another embodiment of the present invention.
The method part that the method for Fig. 6 is different from Fig. 5 is, adopts chemical method to make to comprise organic fine particles in polishing pad 100.
Namely, by making corresponding monomer polymerization after agitating procedure, organic fine particles formation monomer being contained in polishing layer 120 formation material, and forming organic fine particles and make it be dispersed in corresponding mixture solution.
Then, will be selected from by can at least one in the group that forms of the inert gas of control hole size, capsule-type blowing agent and CBA be blended in this mixture solution, to form pore (S210).
Operation subsequently, that is, make mixture gelation and sclerosis describe identical with the operation (S220) forming polishing layer 120 and manufacturing procedure (S230) with above, therefore will repeat no more.
More details of the present invention will be described by specific experiment example is described.Below the details do not described is omitted because it can be released by those skilled in the art's technology.Be apparent that, scope of the present invention is not limited to following experimental example.
< experimental example 1>
1600g polytetramethylene glycol (molecular weight is 1000) is dropped in 5l flask, and slowly drop into 400g styrene monomer and very small amount of initiator A IBN at 100 DEG C ~ 130 DEG C, with induced chemical reaction (polymerization), can generate in polytetramethylene glycol thus and be dispersed with homogeneous particulate.The viscosity being dispersed with the polytetramethylene glycol of homogeneous organic fine particles is 1,700cPs (25 DEG C).
< experimental example 2>
Drop into the polytetramethylene glycol being dispersed with homogeneous organic fine particles and 52g toluene di-isocyanate(TDI) that manufacture in 120g experimental example 1, and the thermotonus 4 hours ~ 5 hours of 70 DEG C ~ 80 DEG C, to make the NCO content of end product for 9.0%.
The viscosity of obtained isocyanate prepolymer is 10,900cPs (25 DEG C).
< experimental example 3>
Evoked discharges between the isocyanate prepolymer utilizing casting machine to manufacture in experimental example 2 and MOCA (a kind of carbamate curing agent) (mixing ratio is 10:3), and in mixture, carry out gas injection simultaneously.The mixture injecting gas is dropped in the rectangular casting mould of 80 DEG C.After this, carry out gelation about 30 minutes, then in baking oven, carry out sclerosis 20 hours at 100 DEG C.From mold, take out the mixture of sclerosis, cut the surface of this hardenable mixture, to form the polishing layer 120 of polishing pad 100.
Be presented in Fig. 4 (b) at the photo in the hole that polishing layer 120 is formed on the surface accordingly, average pore size is 32 μm.
Using the pad manufactured by diamond disk polishing after 10 minutes, the surface roughness of pad is Ra 5.82, Rp 15.05 and Rv 24.07, as shown in Figure 7.
In Fig. 7, transverse axis represents the distance with the central shaft of polishing layer 120, and the longitudinal axis represents the height on polishing layer surface 160.
Carry out long-time polishing and evaluate 5 hours, the frictional behaviour of the pad manufactured with inspection institute, the display of its result in fig. 8.
As shown in Figure 8, compared with the situation not introducing organic fine particles, during introducing organic fine particles, surface roughness improves.
Namely, organic fine particles is dispersed between polyurethane matrix, thus constitutes the interface of the Contact at particle and polyurethane matrix.This means, compared with the situation being in pure state with polyurethane, polyurethane is configured to have weak adhesive force in interface, when can make to use diamond disk to repair in CMP process, polishing pad can demonstrate better friction characteristic.
Therefore, organic fine particles contributes to the improvement of frictional behaviour, and shows positive role in the improvement of hole glazing phenomenon.
Although specifically show with reference to its illustrative embodiments and describe the present invention, it will be understood by those skilled in the art that the various changes can carried out in form and details, and do not depart from the spirit and scope of the invention as defined by the following claims.
Industrial applicability
As mentioned above, according to the present invention, can introduce (comprising) organic fine particles in the undiluted solution of polyurethane prepolymer, the viscosity of undiluted solution is increased because of the interaction between organic fine particles and polyurethane, this contributes to forming homogeneous aperture and obtaining sufficiently high porosity.
In addition, even if the composition of polyurethane matrix does not change because of the adjustment of organic fine particles content, also can the size of adjusting hole and porosity.
In addition, organic fine particles contributes to the frictional behaviour improving the pad interface generated, and can improve hole glazing phenomenon.
Claims (9)
1. a manufacture method for polishing pad, make polishing layer formation material mix the solidification of merga pass chemical reaction by described method, thus manufacture described polishing pad, described method comprises:
A () adopts Physical grinding organic material to form organic fine particles;
B the described organic fine particles formed in (a) mixes with described polishing layer formation material by ();
C () will be selected from by can at least one in the group that forms of the inert gas of control hole size, capsule-type blowing agent and CBA mix with the described mixture in (b), to form pore;
D () carries out gelation and sclerosis, to form polishing layer to the described mixture generated in (c); With
E () processes described polishing layer, be distributed on the surface of described polishing layer to make the perforate limited by opening pore.
2. a manufacture method for polishing pad, make polishing layer formation material mix the solidification of merga pass chemical reaction by described method, thus manufacture described polishing pad, described method comprises:
A () makes to comprise organic fine particles formation monomer in polishing layer formation material, and by making described monomer polymerization after stirring, forming described organic fine particles and making it disperse;
B () will be selected from by can at least one in the group that forms of the inert gas of control hole size, capsule-type blowing agent and CBA mix with the described mixture in (a), to form pore;
C () carries out gelation and sclerosis, to form polishing layer to the described mixture generated in (b); With
D () processes described polishing layer, be distributed on the surface of described polishing layer to make the perforate limited by opening pore.
3. method as claimed in claim 1 or 2, wherein, described organic fine particles comprises at least one in the group being selected from and being made up of polyvinyl resin, acrylic resin, polystyrene resin, Corvic, polyamide, acrylic resin, polyurethane resin, polycarbonate resin, phenolic resins, amino resins, epoxy resin, Lauxite, mylar, rubber acrylonitrile-BS (ABS) and SAN (SAN).
4. method as claimed in claim 1 or 2, wherein, described inert gas is selected from by 0 race's element in the periodic table of elements and does not form the group of the gas composition of reacting with material with described polishing layer.
5. method as claimed in claim 1 or 2, described method also comprises, in described polishing layer formation material, comprise fluent material, and described fluent material forms the micro-liquid composition in described polishing layer.
6. a polishing pad, described polishing pad carries out polishing process by moving with the contact of polishing subject surface, and described polishing pad comprises polishing layer,
Wherein, described polishing layer comprises: at least one in the organic fine particles formed by physical grinding organic material and the organic fine particles formed by the chemical polymerization of monomer; With the pore that at least one by being selected from the group that is made up of inert gas, capsule-type blowing agent and CBA is formed, and
The perforate limited by opening described pore is distributed on the surface of described polishing layer.
7. polishing pad as claimed in claim 6, wherein, described organic fine particles comprises at least one in the group being selected from and being made up of polyvinyl resin, acrylic resin, polystyrene resin, Corvic, polyamide, acrylic resin, polyurethane resin, polycarbonate resin, phenolic resins, amino resins, epoxy resin, Lauxite, mylar, rubber acrylonitrile-BS (ABS) and SAN (SAN).
8. polishing pad as claimed in claims 6 or 7, wherein, described inert gas is selected from by 0 race's element in the periodic table of elements and does not form the group of the gas composition of reacting with material with described polishing layer.
9. polishing pad as claimed in claims 6 or 7, wherein, described polishing layer is included in the micro-liquid composition formed in the presumptive area of described polishing layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120054523A KR101417274B1 (en) | 2012-05-23 | 2012-05-23 | Polishing pad and manufacturing method thereof |
| KR10-2012-0054523 | 2012-05-23 | ||
| PCT/KR2013/001085 WO2013176378A1 (en) | 2012-05-23 | 2013-02-12 | Polishing pad and method for manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104507641A true CN104507641A (en) | 2015-04-08 |
| CN104507641B CN104507641B (en) | 2018-01-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380025329.7A Active CN104507641B (en) | 2012-05-23 | 2013-02-12 | Polishing pad and its manufacture method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20150133039A1 (en) |
| EP (1) | EP2853350A4 (en) |
| JP (1) | JP5959724B2 (en) |
| KR (1) | KR101417274B1 (en) |
| CN (1) | CN104507641B (en) |
| SG (1) | SG11201407257TA (en) |
| WO (1) | WO2013176378A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104802099A (en) * | 2015-05-04 | 2015-07-29 | 华侨大学 | Abrasion block with large chip containing cavities, and preparation method and application thereof |
| CN107646138A (en) * | 2016-04-06 | 2018-01-30 | Kpx化工有限公司 | Grinding pad manufacture method |
| CN109080061A (en) * | 2018-07-25 | 2018-12-25 | 南通德亿新材料有限公司 | A kind of thermoplastic elastomer foaming particle pouring forming technology |
| CN109093538A (en) * | 2018-08-24 | 2018-12-28 | 成都时代立夫科技有限公司 | A kind of CMP pad treatment process |
| CN113414705A (en) * | 2021-07-12 | 2021-09-21 | 苏州赛尔特新材料有限公司 | Large-size double-layer flexible polishing pad and preparation method and application thereof |
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| JP6120965B2 (en) | 2013-07-05 | 2017-04-26 | 旭化成株式会社 | Electrical component including insulating resin molded body and method for stabilizing flame retardancy |
| KR101894071B1 (en) | 2016-11-03 | 2018-08-31 | 에스케이씨 주식회사 | Uv-curable resin composition, polishing pad and preparation method thereof |
| KR102608960B1 (en) * | 2016-12-05 | 2023-12-01 | 삼성전자주식회사 | Method of manufacturing polishing pad for manufacturing integrated circuit device |
| WO2019050365A1 (en) * | 2017-09-11 | 2019-03-14 | 에스케이씨 주식회사 | Porous polyurethane polishing pad and method for manufacturing same |
| KR101949911B1 (en) * | 2017-09-11 | 2019-02-19 | 에스케이씨 주식회사 | Porous polyurethane polishing pad and preparation method thereof |
| KR102088919B1 (en) * | 2017-09-11 | 2020-03-13 | 에스케이씨 주식회사 | Porous polyurethane polishing pad and preparation method thereof |
| KR102502516B1 (en) * | 2021-03-12 | 2023-02-23 | 에스케이엔펄스 주식회사 | Polishing pad, manufacturing method thereof and preparing method of semiconductor device using the same |
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- 2013-02-12 WO PCT/KR2013/001085 patent/WO2013176378A1/en active Application Filing
- 2013-02-12 EP EP13793745.4A patent/EP2853350A4/en not_active Withdrawn
- 2013-02-12 US US14/397,542 patent/US20150133039A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104802099A (en) * | 2015-05-04 | 2015-07-29 | 华侨大学 | Abrasion block with large chip containing cavities, and preparation method and application thereof |
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| CN107646138A (en) * | 2016-04-06 | 2018-01-30 | Kpx化工有限公司 | Grinding pad manufacture method |
| CN107646138B (en) * | 2016-04-06 | 2020-11-06 | Kpx化工有限公司 | Method for manufacturing polishing pad |
| CN109080061A (en) * | 2018-07-25 | 2018-12-25 | 南通德亿新材料有限公司 | A kind of thermoplastic elastomer foaming particle pouring forming technology |
| CN109093538A (en) * | 2018-08-24 | 2018-12-28 | 成都时代立夫科技有限公司 | A kind of CMP pad treatment process |
| CN113414705A (en) * | 2021-07-12 | 2021-09-21 | 苏州赛尔特新材料有限公司 | Large-size double-layer flexible polishing pad and preparation method and application thereof |
| CN113414705B (en) * | 2021-07-12 | 2022-07-29 | 苏州赛尔特新材料有限公司 | Large-size double-layer flexible polishing pad and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2853350A4 (en) | 2016-01-13 |
| KR101417274B1 (en) | 2014-07-09 |
| EP2853350A1 (en) | 2015-04-01 |
| WO2013176378A1 (en) | 2013-11-28 |
| SG11201407257TA (en) | 2014-12-30 |
| JP2015514598A (en) | 2015-05-21 |
| CN104507641B (en) | 2018-01-05 |
| KR20130130893A (en) | 2013-12-03 |
| JP5959724B2 (en) | 2016-08-02 |
| US20150133039A1 (en) | 2015-05-14 |
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