TWI579106B - Low density polishing pad - Google Patents

Low density polishing pad Download PDF

Info

Publication number
TWI579106B
TWI579106B TW103126073A TW103126073A TWI579106B TW I579106 B TWI579106 B TW I579106B TW 103126073 A TW103126073 A TW 103126073A TW 103126073 A TW103126073 A TW 103126073A TW I579106 B TWI579106 B TW I579106B
Authority
TW
Taiwan
Prior art keywords
polishing pad
polishing
diameter
trace elements
polyurethane material
Prior art date
Application number
TW103126073A
Other languages
Chinese (zh)
Other versions
TW201509595A (en
Inventor
黃平
威廉C 亞歷森
理查 法蘭索
保羅 安德烈 里伏瑞
勞伯特 扣普瑞奇
黛安 史考特
Original Assignee
奈平科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 奈平科技股份有限公司 filed Critical 奈平科技股份有限公司
Publication of TW201509595A publication Critical patent/TW201509595A/en
Application granted granted Critical
Publication of TWI579106B publication Critical patent/TWI579106B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/04Zonally-graded surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001Manufacture of flexible abrasive materials
    • B24D11/005Making abrasive webs
    • B24D11/006Making abrasive webs without embedded abrasive particles

Description

低密度拋光墊 Low density polishing pad

本發明之實施例屬於化學機械拋光(CMP)領域,且特定而言屬於低密度拋光墊及製作低密度拋光墊之方法。 Embodiments of the present invention are in the field of chemical mechanical polishing (CMP), and in particular are low density polishing pads and methods of making low density polishing pads.

化學機械平坦化或化學機械拋光(通常縮寫為CMP)係在半導體製作中用於平坦化半導體晶圓或另一基板之技術。 Chemical mechanical planarization or chemical mechanical polishing (often abbreviated as CMP) is a technique used to planarize semiconductor wafers or another substrate in semiconductor fabrication.

程序涉及連同通常具有比晶圓大之直徑的拋光墊及扣環使用研磨性及腐蝕性化學漿液(通常為膠體)。藉由動態拋光頭將拋光墊及晶圓按壓在一起且藉由塑膠扣環將其固持在適當位置。在拋光期間使動態拋光頭旋轉。此方法有助於移除材料且往往易於使任何不規則形貌平整,從而使晶圓平坦或為平面。為了設置晶圓以用於形成額外電路元件,此可為必需的。舉例而言,為了使整個表面在光微影系統之景深內或基於其位置而選擇性地移除材料,此可為必需的。對於最新的低於50奈米技術節點,典型景深要求低至埃位準。 The procedure involves the use of abrasive and corrosive chemical slurries (usually colloids) along with polishing pads and clasps that typically have larger diameters than wafers. The polishing pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated during polishing. This method helps to remove material and tends to flatten any irregular topography to make the wafer flat or planar. This may be necessary in order to set up the wafer for forming additional circuit components. For example, this may be necessary in order to selectively remove the entire surface within the depth of field of the photolithography system or based on its location. For the latest technology nodes below 50 nm, typical depth of field requirements are as low as E.

材料移除程序並非僅為像砂紙在木頭上之研磨性刮擦之程序。漿液中之化學物質亦與待移除之材料反應及/或使其弱化。磨料會加速此弱化程序且拋光墊有助於自表面擦除反應材料。除漿液技術之進步外,拋光墊亦在日益複雜之CMP操作中起重要作用。 The material removal procedure is not just a procedure for abrasive scratching of sandpaper on wood. The chemicals in the slurry also react with and/or weaken the material to be removed. Abrasives accelerate this weakening process and the polishing pad helps to erase the reactive material from the surface. In addition to advances in slurry technology, polishing pads also play an important role in increasingly complex CMP operations.

然而,CMP墊技術之進展中需要額外改良。 However, additional improvements are needed in the advancement of CMP pad technology.

本發明之實施例包含低密度拋光墊及製作低密度拋光墊之方法。 Embodiments of the invention include low density polishing pads and methods of making low density polishing pads.

在一實施例中,一種用於拋光基板之拋光墊包含具有小於0.5g/cc之密度且由熱固性聚胺酯材料構成之拋光主體。複數個閉孔孔隙分散於該熱固性聚胺酯材料中。 In one embodiment, a polishing pad for polishing a substrate comprises a polishing body having a density of less than 0.5 g/cc and composed of a thermosetting polyurethane material. A plurality of closed cell pores are dispersed in the thermosetting polyurethane material.

在另一實施例中,一種用於拋光基板之拋光墊包含具有小於大約0.6g/cc之密度且由熱固性聚胺酯材料構成之拋光主體。複數個閉孔孔隙分散於該熱固性聚胺酯材料中。該複數個閉孔孔隙具有雙模態直徑分佈,該雙模態直徑分佈包含具有第一大小分佈峰值之第一直徑模式及具有第二不同大小分佈峰值之第二直徑模式。 In another embodiment, a polishing pad for polishing a substrate comprises a polishing body having a density of less than about 0.6 g/cc and comprised of a thermosetting polyurethane material. A plurality of closed cell pores are dispersed in the thermosetting polyurethane material. The plurality of closed-cell pores have a bimodal diameter distribution comprising a first diameter pattern having a first size distribution peak and a second diameter pattern having a second different size distribution peak.

在又一實施例中,一種製作拋光墊之方法涉及混合預聚合物及鏈伸長劑或交聯劑與複數個微量元素以形成混合物。該複數個微量元素中之每一者具有初始大小。該方法亦涉及在成型模具中加熱該混合物以提供由熱固性聚胺酯材料構成之模製拋光主體及分散於該熱固性聚胺酯材料中之複數個閉孔孔隙。藉由在該加熱期間使該複數個微量元素中之每一者膨脹至最終較大大小而形成該複數個閉孔孔隙。 In yet another embodiment, a method of making a polishing pad involves mixing a prepolymer and a chain extender or crosslinker with a plurality of trace elements to form a mixture. Each of the plurality of trace elements has an initial size. The method also involves heating the mixture in a forming mold to provide a molded polishing body comprised of a thermosetting polyurethane material and a plurality of closed cell pores dispersed in the thermosetting polyurethane material. The plurality of closed cell pores are formed by expanding each of the plurality of trace elements to a final larger size during the heating.

100A‧‧‧部分 Section 100A‧‧‧

100B‧‧‧部分 Section 100B‧‧‧

200‧‧‧成型模具/模具 200‧‧‧Molding Mold/Mold

202‧‧‧預聚合物 202‧‧‧Prepolymer

204‧‧‧固化劑/鏈伸長劑或交聯劑/主要固化劑及次要固化劑 204‧‧‧Curing agent/chain extender or crosslinker/primary curing agent and secondary curing agent

206‧‧‧成孔劑 206‧‧‧porogen

208‧‧‧氣泡/液滴 208‧‧‧ Bubbles/droplets

210‧‧‧混合物/拋光墊前體混合物 210‧‧‧Mixture/Polishing Pad Precursor Mixture

212‧‧‧微量元素 212‧‧‧ trace elements

214‧‧‧微量元素 214‧‧‧ trace elements

216‧‧‧蓋 216‧‧‧ Cover

218‧‧‧最終較大大小/膨脹微量元素/最終大小/微量元素 218‧‧‧Final larger size/expansion trace elements/final size/trace elements

220‧‧‧墊材料/低密度拋光墊/固化材料/熱固性聚胺酯材料 220‧‧‧Mat material/low density polishing pad/curing material/thermosetting polyurethane material

222‧‧‧低密度拋光墊/墊/模製拋光主體/拋光主體/拋光墊/不透 明模製拋光主體/模製均質拋光主體 222‧‧‧Low-density polishing pad/pad/molding polishing body/polishing body/polishing pad/impermeable Molded polished body / molded homogeneous polished body

224‧‧‧拋光表面 224‧‧‧ Polished surface

226‧‧‧徑向凹槽 226‧‧‧radial grooves

228‧‧‧同心圓形凹槽 228‧‧‧Concentric circular groove

300‧‧‧低密度拋光墊/拋光墊/墊 300‧‧‧Low density polishing pad/polishing pad/mat

400‧‧‧低密度拋光墊/墊/拋光墊 400‧‧‧Low density polishing pad/pad/polish pad

500A‧‧‧曲線圖 500A‧‧‧Curve

500B‧‧‧曲線圖 500B‧‧‧Curve

600‧‧‧拋光墊 600‧‧‧ polishing pad

601‧‧‧均質拋光主體 601‧‧‧Homogeneous polishing body

602‧‧‧閉孔孔隙 602‧‧‧Closed pores

604‧‧‧小直徑模式 604‧‧‧Small diameter mode

606‧‧‧大直徑模式 606‧‧‧ Large diameter mode

620‧‧‧曲線圖 620‧‧‧Curve

630‧‧‧曲線圖 630‧‧‧Graph

700‧‧‧拋光裝置 700‧‧‧ polishing device

702‧‧‧頂部表面 702‧‧‧ top surface

704‧‧‧台板 704‧‧‧ board

706‧‧‧心軸旋轉 706‧‧‧ spindle rotation

708‧‧‧滑件振盪 708‧‧‧Slider oscillation

710‧‧‧樣本載體 710‧‧‧sample carrier

711‧‧‧半導體晶圓 711‧‧‧Semiconductor wafer

712‧‧‧懸掛機構 712‧‧‧ hanging mechanism

714‧‧‧漿液進料 714‧‧‧ slurry feed

790‧‧‧修整單元 790‧‧‧Finishing unit

a-a’‧‧‧軸 A-a’‧‧‧ axis

圖1A係根據先前技術之POLITEX拋光墊之俯視圖。 Figure 1A is a top plan view of a POLITEX polishing pad in accordance with the prior art.

圖1B係根據先前技術之POLITEX拋光墊之剖面圖。 Figure 1B is a cross-sectional view of a POLITEX polishing pad according to the prior art.

圖2A至圖2G圖解說明根據本發明之實施例在製作拋光墊中使用之操作之剖面圖。 2A-2G illustrate cross-sectional views of the operations used in making a polishing pad in accordance with an embodiment of the present invention.

圖3圖解說明根據本發明之實施例包含全部基於成孔劑填料之閉孔孔隙之低密度拋光墊之為100倍及300倍放大率之剖面圖。 3 illustrates a cross-sectional view of a low density polishing pad comprising all of the closed cell pores based on the pore former filler in accordance with an embodiment of the present invention at 100 times and 300 times magnification.

圖4圖解說明根據本發明之實施例包含閉孔孔隙之低密度拋光墊之為100倍及300倍放大率之剖面圖,該等閉孔孔隙之一部分基於成孔劑填料且該等閉孔孔隙之一部分基於氣泡。 4 illustrates a cross-sectional view of a low density polishing pad comprising closed cell pores at 100 times and 300 times magnification, in accordance with an embodiment of the present invention, one of which is based in part on a pore former filler and the closed pore pores Part of it is based on bubbles.

圖5A圖解說明根據本發明之實施例針對低密度拋光墊中之孔隙直徑之寬單模態分佈的群體隨孔隙直徑而變之曲線圖。 5A illustrates a graph of a population of broad single mode distribution versus pore diameter for a pore diameter in a low density polishing pad in accordance with an embodiment of the present invention.

圖5B圖解說明根據本發明之實施例針對低密度拋光墊中之孔隙直徑之窄單模態分佈的群體隨孔隙直徑而變之曲線圖。 5B illustrates a plot of population versus narrow pore size for a narrow single mode distribution of pore diameters in a low density polishing pad in accordance with an embodiment of the present invention.

圖6A圖解說明根據本發明之實施例具有大約1:1之雙模態閉孔孔隙分佈之低密度拋光墊之剖面圖。 6A illustrates a cross-sectional view of a low density polishing pad having a bimodal closed cell pore distribution of about 1:1 in accordance with an embodiment of the present invention.

圖6B圖解說明根據本發明之實施例針對圖6A之拋光墊中之孔隙直徑之窄分佈的群體隨孔隙直徑而變之曲線圖。 6B illustrates a graph of a population of narrow distributions of pore diameters in the polishing pad of FIG. 6A as a function of pore diameter, in accordance with an embodiment of the present invention.

圖6C圖解說明根據本發明之實施例針對圖6A之拋光墊中之孔隙直徑之寬分佈的群體隨孔隙直徑而變之曲線圖。 6C illustrates a plot of a population of broad distributions of pore diameters in the polishing pad of FIG. 6A as a function of pore diameter, in accordance with an embodiment of the present invention.

圖7圖解說明根據本發明之實施例與低密度拋光墊相容之拋光裝置之等角側視圖。 Figure 7 illustrates an isometric side view of a polishing apparatus compatible with a low density polishing pad in accordance with an embodiment of the present invention.

本文中闡述低密度拋光墊及製作低密度拋光墊之方法。在以下說明中,陳述眾多特定細節(諸如特定拋光墊設計及組合物)以提供對本發明之實施例之透徹理解。熟習此項技術者將明瞭,可不藉助此等特定細節來實踐本發明之實施例。在其他情況下,眾所周知之處理技術(諸如關於漿液與拋光墊之組合以執行半導體基板之化學機械平坦化(CMP)之細節)未加以詳細闡述,以不會使本發明之實施例不必要地模糊。此外,應理解,圖中所展示之各種實施例係說明性表示且未必按比例繪製。 Low density polishing pads and methods of making low density polishing pads are described herein. In the following description, numerous specific details are set forth, such as specific polishing pad designs and compositions, to provide a thorough understanding of the embodiments of the invention. It will be apparent to those skilled in the art that the embodiments of the invention may be practiced without the specific details. In other instances, well-known processing techniques, such as details regarding the combination of slurry and polishing pad to perform chemical mechanical planarization (CMP) of a semiconductor substrate, are not described in detail so as not to unnecessarily obscure embodiments of the present invention. blurry. In addition, the various embodiments shown in the figures are illustrative and not necessarily to scale.

本文中所闡述之一或多項實施例針對於具有小於大約0.6克/立方釐米(g/cc)之低密度且更特定而言小於大約0.5g/cc之低密度之拋光墊之製作。所得墊可基於具有提供低密度之閉孔孔隙隙度之聚胺酯材料。該等低密度墊可用作(例如)擦光輪拋光墊或用作經設計用於諸如襯裡/障壁移除之特殊化學機械拋光(CMP)應用之拋光墊。在某些實施 例中,可將本文中所闡述之拋光墊製作為具有低至介於0.3g/cc至0.5g/cc之範圍內(諸如大約0.357g/cc)之密度。在特定實施例中,低密度墊具有低至大約0.2g/cc之密度。 One or more embodiments set forth herein are directed to the fabrication of polishing pads having a low density of less than about 0.6 grams per cubic centimeter (g/cc) and, more specifically, less than about 0.5 g/cc. The resulting mat can be based on a polyurethane material having a closed cell pore size that provides a low density. These low density mats can be used, for example, as a buffing wheel polishing pad or as a polishing pad designed for special chemical mechanical polishing (CMP) applications such as lining/barrier removal. In some implementations In one example, the polishing pads described herein can be made to have a density as low as in the range of from 0.3 g/cc to 0.5 g/cc, such as about 0.357 g/cc. In a particular embodiment, the low density mat has a density as low as about 0.2 g/cc.

為提供上下文,典型CMP墊具有大約0.7g/cc至0.8g/cc之密度,且通常至少高於0.5g/cc。習用地,典型CMP擦光輪墊具有使用通向表面之大孔之「多孔聚合物」設計。諸如在POLITEX拋光墊之情形中,複合聚胺酯表皮包含在支撐件上。習用地,擦光輪墊係極軟的且以開孔孔隙度來低密度製作(例如,纖維墊及「多孔聚合物」墊)。此等墊通常與CMP之兩個基本問題相關聯:與習用閉孔聚胺酯(但較高密度)CMP墊相比之短壽命及較不一致效能。圖1A及圖1B分別係根據先前技術之POLITEX拋光墊之俯視圖及剖面圖。參考圖1A,POLITEX拋光墊之一部分100A在掃描電子顯微鏡(SEM)影像中展示為經放大300倍。參考圖1B,POLITEX拋光墊之一部分100B在掃描電子顯微鏡(SEM)影像中展示為經放大100倍。參考圖1A及圖1B兩者,先前技術墊之開孔結構係可容易看到的。 To provide context, a typical CMP pad has a density of from about 0.7 g/cc to 0.8 g/cc, and is typically at least above 0.5 g/cc. Conventionally, a typical CMP wiper pad has a "porous polymer" design that uses large holes leading to the surface. In the case of a POLITEX polishing pad, for example, a composite polyurethane skin is included on the support. Conventionally, the buffing pad is extremely soft and is made at a low density with open cell porosity (eg, fiber mats and "porous polymer" mats). These pads are often associated with two fundamental problems with CMP: short life and inconsistent performance compared to conventional closed cell polyurethane (but higher density) CMP pads. 1A and 1B are top and cross-sectional views, respectively, of a POLITEX polishing pad according to the prior art. Referring to Figure 1A, one portion 100A of a POLITEX polishing pad is shown to be magnified 300 times in a scanning electron microscope (SEM) image. Referring to FIG. 1B, one portion 100B of the POLETEX polishing pad is shown to be magnified 100 times in a scanning electron microscope (SEM) image. Referring to both Figures 1A and 1B, the aperture structure of prior art pads is readily visible.

更一般而言,基本挑戰中之一者係製作具有高孔隙度及低密度之閉孔聚胺酯墊。在藉由模製或鑄造程序製作低密度聚胺酯墊中我們自己的調查已展示僅將經增加體積之成孔劑添加至墊配方混合物中以基於經添加成孔劑而將閉孔孔隙最終提供於墊材料中的困難。特定而言,添加比典型墊配方多之成孔劑可將配方之黏度增加至鑄造或模製程序難管理之位準。該情形對於包含預膨脹成孔劑或貫穿模製或鑄造程序保持基本上相同體積之成孔劑可係尤其困難的。根據本發明之實施例,未膨脹成孔劑或貫穿模製或鑄造程序增加體積之成孔劑包含於墊配方中以用於最終產生。然而,在一項此類實施例中,若所有最終閉孔孔隙由未膨脹成孔劑產生,則在鑄造或模製中配方之黏度之可管理性可係過低的。照此,在一項實施例中,除形成配方以包含未膨脹 成孔劑或貫穿模製或鑄造程序增加體積之成孔劑之外,亦包含預膨脹成孔劑或貫穿模製或鑄造程序保持基本上相同體積之成孔劑以達成墊配方之黏度調諧。 More generally, one of the basic challenges is to make a closed cell polyurethane mat with high porosity and low density. Our own investigations in the fabrication of low density polyurethane mats by molding or casting procedures have shown that only an increased volume of pore former is added to the mat formulation mixture to ultimately provide closed pores based on the added pore former. Difficulties in the pad material. In particular, the addition of more pore formers than typical mat formulations can increase the viscosity of the formulation to a level that is difficult to manage in the casting or molding process. This situation can be particularly difficult for porogens comprising a pre-expanded porogen or a substantially same volume throughout the molding or casting process. In accordance with embodiments of the present invention, an unexpanded porogen or an increased volume of porogen throughout the molding or casting process is included in the pad formulation for final production. However, in one such embodiment, if all of the final closed cell pores are produced by an unexpanded pore former, the manageability of the viscosity of the formulation in casting or molding can be too low. As such, in one embodiment, in addition to forming a formulation to include unexpanded In addition to the pore former or the increased pore size of the pore forming agent through the molding or casting process, it also includes a pre-expansion pore former or a substantially same volume of pore former throughout the molding or casting process to achieve viscosity tuning of the pad formulation.

因此,在一實施例中,未膨脹成孔劑填料或在高於周圍溫度下膨脹之膨脹不足成孔劑填料(兩者稱為UPF)用於在藉由鑄造或模製進行製造期間在拋光墊中形成孔隙度。在一項此類實施例中,大量UPF包含於聚胺酯形成之混合物中。UPF在墊鑄造程序期間膨脹且形成具有閉孔孔隙之低密度墊。形成拋光墊之以上方法可具有優於已用於形成具有開孔之低密度墊之其他技術之優點。舉例而言,僅基於氣體注入或挾帶之最終墊孔隙度之製作可需要專門設備,且可伴隨有控制最終墊密度之困難及控制最終孔隙大小及分佈之困難。在另一實例中,僅基於原位氣體產生(例如,與異氰酸鹽部分(NCO)之水反應以形成CO2氣泡)之最終墊孔隙度之製作可伴隨有控制孔隙大小分佈之困難。 Thus, in one embodiment, the unexpanded porogen filler or the insufficient expansion porogen filler (both referred to as UPF) that expands above ambient temperature is used for polishing during fabrication by casting or molding. Porosity is formed in the mat. In one such embodiment, a large amount of UPF is included in the mixture formed by the polyurethane. The UPF expands during the pad casting process and forms a low density pad with closed cell pores. The above method of forming a polishing pad can have advantages over other techniques that have been used to form low density pads with apertures. For example, fabrication of the final mat porosity based solely on gas injection or entrainment may require specialized equipment and may be accompanied by difficulties in controlling the final mat density and difficulties in controlling the final pore size and distribution. In another example, only based on in situ generated gas (e.g., reaction with isocyanate portion of water (NCO) 2 to form bubbles of CO) production of a final porosity of the mat may be accompanied by difficulties in the control of the pore size distribution.

在本發明之一態樣中,可在模製程序中製作低密度拋光墊。舉例而言,圖2A至圖2G根據本發明之實施例圖解說明在製作拋光墊中使用之操作之剖面圖。 In one aspect of the invention, a low density polishing pad can be fabricated in a molding process. For example, Figures 2A-2G illustrate cross-sectional views of the operations used in making a polishing pad in accordance with an embodiment of the present invention.

參考圖2A,提供成型模具200。參考圖2B,混合預聚合物202及固化劑204(例如,鏈伸長劑或交聯劑)與複數個微量元素以形成混合物。在一實施例中,該複數個微量元素係複數個成孔劑206,諸如填滿或中空微球。在另一實施例中,該複數個微量元素係複數個氣泡或液滴或兩者208。在另一實施例中,該複數個微量元素係複數個成孔劑206與複數個氣泡或液滴或兩者208之組合。 Referring to Figure 2A, a forming die 200 is provided. Referring to Figure 2B, prepolymer 202 and curing agent 204 (e.g., chain extender or crosslinker) are mixed with a plurality of trace elements to form a mixture. In one embodiment, the plurality of trace elements are a plurality of pore formers 206, such as filled or hollow microspheres. In another embodiment, the plurality of trace elements are a plurality of bubbles or droplets or both 208. In another embodiment, the plurality of trace elements are a combination of a plurality of pore formers 206 and a plurality of bubbles or droplets or both.

參考圖2C,在成型模具200之底座處展示自圖2B所得之混合物210。混合物210包含第一複數個微量元素212,該第一複數個微量元素中之每一者具有初始大小。第二複數個微量元素214亦可包含於混合物210中,如下文更詳細地闡述。 Referring to Figure 2C, the mixture 210 obtained from Figure 2B is shown at the base of the forming mold 200. The mixture 210 includes a first plurality of trace elements 212, each of the first plurality of trace elements having an initial size. A second plurality of trace elements 214 can also be included in the mixture 210, as set forth in more detail below.

參考圖2D,使成型模具200之蓋216與成型模具200之底座在一起且混合物210呈現成型模具200之形狀。在一實施例中,在使成型模具200之蓋216與底座在一起後或期間給模具200排氣以使得不會有腔或空隙形成於成型模具200內。應理解,闡述降低成型模具之蓋之本文中所闡述之實施例僅需要達成使成型模具之蓋與底座在一起。亦即,在某些實施例中,朝向成型模具之蓋提高成型模具之底座,而在其他實施例中在朝向成型模具之蓋提高成型模具之底座之同時朝向該底座降低該蓋。 Referring to FIG. 2D, the cover 216 of the molding die 200 is brought together with the base of the molding die 200 and the mixture 210 assumes the shape of the molding die 200. In one embodiment, the mold 200 is vented after or during the time the lid 216 of the forming mold 200 is brought together with the base such that no cavities or voids are formed within the forming mold 200. It should be understood that the embodiments set forth herein that illustrate the reduction of the lid of the forming mold need only achieve that the lid of the forming mold is attached to the base. That is, in some embodiments, the cover toward the forming mold raises the base of the forming mold, while in other embodiments the cover is lowered toward the base while the cover toward the forming mold raises the base of the forming mold.

參考圖2E,在成型模具200中加熱混合物210。複數個微量元素212中之每一者在加熱期間膨脹至最終較大大小218。另外參考圖2F,加熱用於固化混合物210以提供環繞微量元素218及(若存在)微量元素214之部分地或完全地固化之墊材料220。在一項此類實施例中,固化基於預聚合物及固化劑之材料而形成交聯基質。 Referring to FIG. 2E, the mixture 210 is heated in the molding die 200. Each of the plurality of trace elements 212 expands to a final larger size 218 during heating. Referring additionally to Figure 2F, the heating is used to cure the mixture 210 to provide a pad material 220 that surrounds the trace elements 218 and, if present, the partially or fully cured trace elements 214. In one such embodiment, the curing forms a crosslinked matrix based on the materials of the prepolymer and the curing agent.

共同參考圖2E及圖2F,應理解使微量元素212膨脹至最終較大大小218及固化混合物210之定序不一定以所圖解說明之次序發生。在另一實施例中,在加熱期間,混合物210之固化在使微量元素212膨脹至最終較大大小218之前發生。在另一實施例中,在加熱期間,混合物210之固化在使微量元素212膨脹至最終較大大小218之同時發生。在又一實施例中,分別執行兩個單獨加熱操作以固化混合物210且使微量元素212膨脹至最終較大大小218。 Referring collectively to Figures 2E and 2F, it is understood that the order in which the trace elements 212 are expanded to the final larger size 218 and the cured mixture 210 does not necessarily occur in the order illustrated. In another embodiment, the curing of the mixture 210 occurs prior to expanding the trace elements 212 to a final larger size 218 during heating. In another embodiment, during heating, curing of the mixture 210 occurs while expanding the trace elements 212 to a final larger size 218. In yet another embodiment, two separate heating operations are performed to cure the mixture 210 and expand the trace elements 212 to a final larger size 218, respectively.

參考圖2G,在一實施例中,上文所闡述之程序用於提供低密度拋光墊220。低密度拋光墊222由固化材料220構成且包含膨脹微量元素218及(在某一實施例中)額外微量元素214。在一實施例中,低密度拋光墊222由熱固性聚胺酯材料構成且膨脹微量元素218提供分散於熱固性聚胺酯材料中之複數個閉孔孔隙。再次參考圖2G,該圖之底部部分係沿著a-a’軸截取之上部剖面圖之平面圖。如平面圖中所見,在 一實施例中,低密度拋光墊222具有其中具有凹槽圖案之拋光表面224。在一項特定實施例中,如所展示,凹槽圖案包含徑向凹槽226及同心圓形凹槽228。 Referring to FIG. 2G, in one embodiment, the procedures set forth above are used to provide a low density polishing pad 220. The low density polishing pad 222 is comprised of a cured material 220 and comprises an expanded trace element 218 and, in one embodiment, an additional trace element 214. In one embodiment, the low density polishing pad 222 is comprised of a thermoset polyurethane material and the expanded trace element 218 provides a plurality of closed cell pores dispersed in the thermoset polyurethane material. Referring again to Figure 2G, the bottom portion of the Figure is a plan view of the upper cross-sectional view taken along the a-a' axis. As seen in the plan, in In one embodiment, the low density polishing pad 222 has a polishing surface 224 having a groove pattern therein. In a particular embodiment, as shown, the groove pattern includes a radial groove 226 and a concentric circular groove 228.

再次參考圖2D及圖2E,在一實施例中,複數個微量元素212中之每一者藉由使該複數個微量元素中之每一者之體積增加大約介於3至1000之範圍內之倍數而膨脹至最終大小218。在一實施例中,複數個微量元素212中之每一者膨脹至最終大小218以將複數個微量元素218中之每一者之最終直徑提供為大約介於10微米至200微米之範圍內。在一實施例中,複數個微量元素212中之每一者藉由使複數個微量元素212中之每一者之密度減小大約介於3至1000之範圍內之倍數而膨脹至最終大小218。在一實施例中,複數個微量元素212中之每一者藉由針對最終大小之複數個微量元素218中之每一者形成基本上球形形狀而膨脹至最終大小218。 Referring again to FIGS. 2D and 2E, in one embodiment, each of the plurality of trace elements 212 increases the volume of each of the plurality of trace elements by between about 3 and 1000. Expand to a final size of 218 in multiples. In one embodiment, each of the plurality of trace elements 212 is expanded to a final size 218 to provide a final diameter of each of the plurality of trace elements 218 in a range from about 10 microns to 200 microns. In one embodiment, each of the plurality of trace elements 212 expands to a final size 218 by reducing the density of each of the plurality of trace elements 212 by a factor in the range of from about 3 to about 1000. . In one embodiment, each of the plurality of trace elements 212 expands to a final size 218 by forming a substantially spherical shape for each of the plurality of trace elements 218 of the final size.

在一實施例中,複數個微量元素212係之後在墊材料配方內膨脹以在成品拋光墊材料內形成閉孔孔隙之經添加成孔劑、氣泡或液體泡沫。在一項此類實施例中,該複數個閉孔孔隙係藉由使對應較小成孔劑膨脹而形成之複數個較大成孔劑。舉例而言,術語「成孔劑」可用於指示具有「中空」中心之微米或奈米級球形或稍微球形粒子。中空中心並未填充有固體材料,而是可包含氣體或液體核心。在一項實施例中,該複數個閉孔孔隙以遍及混合物分佈之未膨脹填充氣體或填充液體之EXPANCELTM作為開始。在(例如)藉由模製程序由混合物形成拋光墊後及/或期間,未膨脹填充氣體或填充液體之EXPANCELTM變得膨脹。在特定實施例中,EXPANCELTM填充有戊烷。在一實施例中,該複數個閉孔孔隙中之每一者在其膨脹狀態中(例如,在最終產物中)具有大約介於10微米至100微米之範圍內之直徑。因此,在一實施例中,具有初始大小之該複數個微量元素中之每一者包含實體外 殼,且具有最終大小之該複數個微量元素中之每一者包含膨脹實體外殼。在另一實施例中,具有初始大小之複數個微量元素212中之每一者係液滴,且具有最終大小之複數個微量元素218中之每一者係氣泡。在又一實施例中,針對形成具有最終大小之複數個微量元素218,用以形成混合物210之混合進一步涉及將氣體注入至預聚合物及鏈伸長劑或交聯劑中,或注入至由其形成之產物中。在特定此類實施例中,預聚合物係異氰酸酯且該混合進一步涉及將水添加至預聚合物。在任一情形中,在一實施例中,該複數個閉孔孔隙包含彼此離散之孔隙。此與可透過通道彼此連接之開孔孔隙相反,諸如常見海綿中之孔隙之情形。 In one embodiment, the plurality of trace elements 212 are subsequently expanded within the pad material formulation to form a porogen, bubble or liquid foam in the closed pores of the finished polishing pad material. In one such embodiment, the plurality of closed cell pores are a plurality of larger pore formers formed by expanding corresponding smaller pore formers. For example, the term "porogen" can be used to indicate micron or nanoscale spherical or slightly spherical particles having a "hollow" center. The hollow center is not filled with solid material, but may contain a gas or liquid core. In one embodiment, the plurality of closed porosity distributed in the unexpanded throughout the mixture or filled with a gas filling liquids as EXPANCEL TM starts. After the (e.g.) formed by molding a mixture of a polishing pad procedure and / or during the filling gas or unexpanded EXPANCEL TM becomes filled with the liquid expander. In a particular embodiment, the EXPANCEL (TM) is filled with pentane. In one embodiment, each of the plurality of closed cell pores has a diameter in the expanded state (eg, in the final product) that is in the range of from about 10 microns to about 100 microns. Thus, in one embodiment, each of the plurality of trace elements having an initial size comprises a solid outer shell, and each of the plurality of trace elements having a final size comprises an expanded solid outer shell. In another embodiment, each of the plurality of trace elements 212 having an initial size is a droplet, and each of the plurality of trace elements 218 having a final size is a bubble. In yet another embodiment, for forming a plurality of trace elements 218 having a final size, the mixing used to form the mixture 210 further involves injecting a gas into the prepolymer and the chain extender or crosslinker, or injecting thereto In the product formed. In certain such embodiments, the prepolymer is an isocyanate and the mixing further involves adding water to the prepolymer. In either case, in one embodiment, the plurality of closed cell pores comprise discrete pores from each other. This is in contrast to the apertures of the apertures that are permeable to each other, such as those in conventional sponges.

再次參考圖2C至圖2E,在一實施例中,混合預聚合物202及鏈伸長劑或交聯劑204與複數個微量元素212進一步涉及與第二複數個微量元素214混合以形成混合物210。第二複數個微量元素214中之每一者具有一大小。在一項此類實施例中,在足夠低以使得第二複數個微量元素214中之每一者之大小在加熱之前及之後基本上相同之溫度下執行與圖2E相關聯地闡述之加熱,如圖2E中所繪示。在特定此類實施例中,在大約攝氏100度或更低之溫度下執行加熱,且第二複數個微量元素214具有大於大約攝氏130度之膨脹臨限值。在另一實施例中,第二複數個微量元素214具有大於複數個微量元素212之膨脹臨限值之膨脹臨限值。在一項特定此類實施例中,第二複數個微量元素214之膨脹臨限值大於大約攝氏120度,且複數個微量元素212之膨脹臨限值小於大約攝氏110度。照此,在一實施例中,在加熱期間,微量元素212膨脹以提供膨脹微量元素218,而微量元素214基本上保持不變。 Referring again to FIGS. 2C-2E, in one embodiment, mixing the prepolymer 202 and the chain extender or crosslinker 204 with the plurality of trace elements 212 further involves mixing with the second plurality of trace elements 214 to form the mixture 210. Each of the second plurality of trace elements 214 has a size. In one such embodiment, the heating set forth in association with FIG. 2E is performed at a temperature sufficiently low that the size of each of the second plurality of trace elements 214 is substantially the same before and after heating, As shown in Figure 2E. In certain such embodiments, the heating is performed at a temperature of about 100 degrees Celsius or less, and the second plurality of trace elements 214 have an expansion threshold greater than about 130 degrees Celsius. In another embodiment, the second plurality of trace elements 214 have an expansion threshold greater than the expansion threshold of the plurality of trace elements 212. In a particular such embodiment, the expansion threshold of the second plurality of trace elements 214 is greater than about 120 degrees Celsius, and the expansion threshold of the plurality of trace elements 212 is less than about 110 degrees Celsius. As such, in one embodiment, during heating, the trace elements 212 expand to provide an expanded trace element 218, while the trace elements 214 remain substantially unchanged.

在一實施例中,第二複數個微量元素214中之每一者由遍及拋光墊(例如,在拋光墊中作為額外組份)分佈之預膨脹且填充氣體之EXPANCELTM構成。亦即,針對微量元素214可能發生之任何顯著膨 脹在其包含於拋光墊形成中之前(例如,在包含於混合物210中之前)實施。在特定實施例中,預膨脹EXPANCELTM填充有戊烷。在一實施例中,微量元素214提供複數個閉孔孔隙(再次展示為214,在模製程序期間幾乎不具有改變)具有大約介於10微米至100微米之範圍內之直徑。在一實施例中,所得複數個閉孔孔隙包含彼此離散之孔隙。此與可透過通道彼此連接之開孔孔隙相反,諸如常見海綿中之孔隙之情形。 In one embodiment, each of the second plurality of trace elements 214 throughout the polishing pad (e.g., in the polishing pad as an additional component) filled with a pre-expansion and distribution of gas constitutes EXPANCEL TM. That is, any significant expansion that may occur with respect to the trace elements 214 is performed prior to its inclusion in the polishing pad formation (eg, prior to inclusion in the mixture 210). In a particular embodiment, the pre-expanded EXPANCEL (TM) is filled with pentane. In one embodiment, the trace elements 214 provide a plurality of closed cell pores (shown again as 214 with little change during the molding process) having a diameter in the range of from about 10 microns to about 100 microns. In one embodiment, the resulting plurality of closed cell pores comprise discrete pores from one another. This is in contrast to the apertures of the apertures that are permeable to each other, such as those in conventional sponges.

如上文所闡述,藉由添加比典型墊配方多之成孔劑而增加孔隙度可將配方之黏度增加至鑄造或模製程序難管理之位準。該情形對於包含預膨脹成孔劑或貫穿模製或鑄造程序保持基本上相同體積之成孔劑可係尤其困難的。另一方面,若所有最終閉孔孔隙由未膨脹成孔劑產生,則在鑄造或模製中配方之黏度之可管理性可係過低的。為瞭解決此等情況,根據本發明之實施例,在概念上,預聚合物202、鏈伸長劑或交聯劑204及第二複數個微量元素214之混合物具有一黏度。同時,預聚合物202、鏈伸長劑或交聯劑204、具有初始大小之複數個微量元素212及第二複數個微量元素214之混合物基本上具有相同黏度。亦即,包含具有初始(較小)大小之複數個微量元素212對混合物之黏度幾乎不具有影響。在一實施例中,然後,最佳模製條件之所闡述黏度可基於包含具有貫穿模製程序保持基本上恆定之大小之第二複數個微量元素經選擇。在一項此類實施例中,然後,該黏度係預定黏度,且基於該預定黏度而選擇混合物210中之第二複數個微量元素214之相對量。而且,在一項實施例中,複數個微量元素212對混合物210之黏度幾乎不具有影響。 As noted above, increasing the porosity by adding more pore former than typical mat formulations can increase the viscosity of the formulation to a level that is difficult to manage in the casting or molding process. This situation can be particularly difficult for porogens comprising a pre-expanded porogen or a substantially same volume throughout the molding or casting process. On the other hand, if all of the final closed cell pores are produced by an unexpanded pore former, the manageability of the viscosity of the formulation in casting or molding can be too low. In order to address such circumstances, in accordance with an embodiment of the present invention, a mixture of prepolymer 202, chain extender or crosslinker 204 and second plurality of trace elements 214 is conceptually having a viscosity. At the same time, the mixture of prepolymer 202, chain extender or crosslinker 204, a plurality of trace elements 212 having an initial size, and a second plurality of trace elements 214 have substantially the same viscosity. That is, the inclusion of a plurality of trace elements 212 having an initial (smaller) size has little effect on the viscosity of the mixture. In one embodiment, the viscosity of the preferred molding conditions can then be selected based on a second plurality of trace elements comprising a size that remains substantially constant throughout the molding process. In one such embodiment, then the viscosity is a predetermined viscosity and the relative amount of the second plurality of trace elements 214 in the mixture 210 is selected based on the predetermined viscosity. Moreover, in one embodiment, the plurality of trace elements 212 have little effect on the viscosity of the mixture 210.

再次參考圖2E,在一實施例中,在其中包含兩個不同複數個微量元素之情形中,具有膨脹的最終大小之複數個微量元素218中之每一者具有與貫穿加熱程序未膨脹之複數個微量元素214中之每一者大 約相同之形狀及大小,如所繪示。然而,應理解,具有膨脹的最終大小之複數個微量元素218中之每一者不必具有與複數個微量元素214中之每一者相同之形狀及/或大小。在一實施例中,如與圖6A至圖6C相關聯地在下文更詳細地闡述,墊222之所得模製拋光主體包含複數個膨脹微量元素218作為閉孔孔隙,複數個膨脹微量元素218包含具有第一大小分佈峰值之第一直徑模式。而且,亦包含第二複數個微量元素214作為閉孔孔隙,第二複數個微量元素214包含具有第二不同大小分佈峰值之第二直徑模式。在一項此類實施例中,微量元素218之該複數個閉孔孔隙及微量元素214之該第二複數個閉孔孔隙在熱固性聚胺酯材料中提供大約介於低密度拋光墊222之熱固性聚胺酯材料之總體積之55%至80%之範圍內之總孔隙體積。 Referring again to FIG. 2E, in one embodiment, in the case where two different plurality of trace elements are included, each of the plurality of trace elements 218 having the expanded final size has a plurality of unexpanded throughout the heating sequence. Each of the trace elements 214 is large About the same shape and size, as shown. However, it should be understood that each of the plurality of trace elements 218 having the expanded final size need not have the same shape and/or size as each of the plurality of trace elements 214. In one embodiment, as described in more detail below in association with Figures 6A-6C, the resulting molded polishing body of pad 222 includes a plurality of expanded microelements 218 as closed cell pores, and a plurality of expanded microelements 218 comprising A first diameter pattern having a peak of a first size distribution. Moreover, a second plurality of trace elements 214 are also included as closed-cell pores, and a second plurality of trace elements 214 comprise a second diameter pattern having a second peak of different size distribution. In one such embodiment, the plurality of closed cell pores of trace element 218 and the second plurality of closed cell pores of trace element 214 provide a thermoset polyurethane material in the thermoset polyurethane material about between low density polishing pad 222. The total pore volume in the range of 55% to 80% of the total volume.

再次參考圖2D至圖2G,在一實施例中,加熱混合物210以提供模製拋光主體222涉及形成具有小於0.5g/cc之密度之拋光主體222。然而,在一項此類實施例中,混合物210在加熱之前具有大於0.5g/cc之密度。在一實施例中,預聚合物202係異氰酸酯且鏈伸長劑或交聯劑204係芳香族雙胺化合物,且拋光墊222由熱固性聚胺酯材料220構成。在一項此類實施例中,形成混合物210進一步涉及將失透填料添加至預聚合物202及鏈伸長劑或交聯劑204以最終提供不透明模製拋光主體222。在特定此類實施例中,失透填料係諸如(但不限於)氮化硼、氟化鈰、石墨、氟化石墨、硫化鉬、硫化鈮、滑石、硫化鉭、二硫化鎢或鐵氟龍之材料。在一實施例中,如上文簡略提及,混合物210在模具200中僅部分地固化,且在一項實施例中,繼自成型模具200之移除之後在爐中進一步固化。 Referring again to FIGS. 2D-2G, in one embodiment, heating the mixture 210 to provide a molded polishing body 222 involves forming a polishing body 222 having a density of less than 0.5 g/cc. However, in one such embodiment, the mixture 210 has a density greater than 0.5 g/cc prior to heating. In one embodiment, the prepolymer 202 is an isocyanate and the chain extender or crosslinker 204 is an aromatic bisamine compound, and the polishing pad 222 is comprised of a thermoset polyurethane material 220. In one such embodiment, forming the mixture 210 further involves adding a devitrified filler to the prepolymer 202 and chain extender or crosslinker 204 to ultimately provide an opaque molded polishing body 222. In certain such embodiments, the devitrification filler is such as, but not limited to, boron nitride, barium fluoride, graphite, graphite fluoride, molybdenum sulfide, barium sulfide, talc, barium sulfide, tungsten disulfide or Teflon. Material. In an embodiment, as briefly mentioned above, the mixture 210 is only partially cured in the mold 200, and in one embodiment, is further cured in the furnace after removal from the forming mold 200.

在一實施例中,使用拋光墊前體混合物210以最終形成由熱固性閉孔聚胺酯材料構成之模製均質拋光主體222。在一項此類實施例中,使用拋光墊前體混合物210以最終形成硬墊且僅使用單一類型之 固化劑204。在另一實施例中,使用拋光墊前體混合物210以最終形成軟墊且使用主要及次要固化劑(一起提供210)之組合。舉例而言,在特定實施例中,預聚合物202包含聚胺酯前體,主要固化劑包含芳香族雙胺化合物,且次要固化劑包含醚鍵聯。在特定實施例中,聚胺酯前體係異氰酸酯,主要固化劑係芳香族雙胺,且次要固化劑係諸如(但不限於)聚四亞甲基二醇、胺基官能化二醇或胺基官能化聚氧丙烯之固化劑。在一實施例中,預聚合物202、主要固化劑及次要固化劑(一起為204)具有106份預聚合物、85份主要固化劑及15份次要固化劑之近似莫耳比,即,以提供大約1:0.96的預聚合物:固化劑之化學計量。應理解,可使用比率之變化形式或基於預聚合物及第一及第二固化劑之特定性質提供具有變化硬度值之拋光墊。 In one embodiment, the polishing pad precursor mixture 210 is used to ultimately form a molded homogeneous polishing body 222 comprised of a thermoset closed cell polyurethane material. In one such embodiment, the polishing pad precursor mixture 210 is used to ultimately form a hard mat and only a single type is used Curing agent 204. In another embodiment, the polishing pad precursor mixture 210 is used to ultimately form a cushion and a combination of primary and secondary curing agents (provided together 210) is used. For example, in a particular embodiment, the prepolymer 202 comprises a polyurethane precursor, the primary curing agent comprises an aromatic bisamine compound, and the secondary curing agent comprises an ether linkage. In a particular embodiment, the polyurethane pre-system isocyanate, the primary curing agent is an aromatic diamine, and the secondary curing agent is such as, but not limited to, polytetramethylene glycol, amine functional diol or amine functional A curing agent for polyoxypropylene. In one embodiment, the prepolymer 202, the primary curing agent, and the secondary curing agent (together 204) have an approximate molar ratio of 106 parts prepolymer, 85 parts primary curing agent, and 15 secondary curing agents, ie, To provide a prepolymer of about 1:0.96: stoichiometry of the curing agent. It will be appreciated that polishing pads having varying hardness values can be provided using variations in ratios or based on the specific properties of the prepolymer and the first and second curing agents.

再次參考圖2G,如上文所闡述,在一實施例中,成型模具200中之加熱涉及在模製拋光主體222之拋光表面224中形成凹槽圖案。如所展示之凹槽圖案包含徑向凹槽及同心圓形圓周凹槽。應理解,可省略徑向凹槽或圓周凹槽。此外,同心圓周凹槽可替代地係多邊形,諸如巢套三角形、正方形、五邊形、六邊形等。另一選擇係,拋光表面可替代地基於突出部而非凹槽。此外,可在拋光表面中不具有凹槽之情況下製作低密度拋光墊。在一項此類實例中,使用模製裝置之未圖案化蓋而非經圖案化蓋。或者,另一選擇係,可省略在模製期間蓋之使用。在模製期間使用蓋之情形中,可在大約介於2磅/平方英吋至12磅/平方英吋之範圍內之壓力下加熱混合物210。 Referring again to FIG. 2G, as explained above, in one embodiment, heating in the forming mold 200 involves forming a groove pattern in the polishing surface 224 of the molded polishing body 222. The groove pattern as shown includes a radial groove and a concentric circular circumferential groove. It should be understood that radial or circumferential grooves may be omitted. Further, the concentric circumferential grooves may alternatively be polygonal, such as a nested triangle, a square, a pentagon, a hexagon, or the like. Alternatively, the polishing surface can alternatively be based on a protrusion rather than a groove. In addition, a low density polishing pad can be fabricated without a recess in the polishing surface. In one such example, an unpatterned lid of the molding device is used instead of a patterned lid. Alternatively, another option may omit the use of the cover during molding. In the case where a lid is used during molding, the mixture 210 can be heated at a pressure in the range of from about 2 pounds per square inch to 12 pounds per square inch.

在一態樣中,可製作具有閉孔孔隙之低密度墊。舉例而言,在一實施例中,拋光墊包含具有小於0.6之密度且由熱固性聚胺酯材料構成之拋光主體。複數個閉孔孔隙分散於熱固性聚胺酯材料中。在特定實施例中,該密度小於0.5g/cc。在一實施例中,該複數個閉孔孔隙在熱固性聚胺酯材料中提供大約介於熱固性聚胺酯材料之總體積之 55%至80%之範圍內之總孔隙體積。在一實施例中,該複數個閉孔孔隙中之每一者係基本上球形的。在一實施例中,拋光主體進一步包含第一槽形表面;及與該第一表面相對之第二平坦表面,如與圖2G相關聯地闡述。在一實施例中,拋光主體係均質拋光主體,如下文更詳細地闡述。 In one aspect, a low density mat having closed cell pores can be fabricated. For example, in one embodiment, the polishing pad comprises a polishing body having a density of less than 0.6 and composed of a thermosetting polyurethane material. A plurality of closed cell pores are dispersed in the thermosetting polyurethane material. In a particular embodiment, the density is less than 0.5 g/cc. In one embodiment, the plurality of closed cell pores provide about a total volume of the thermosetting polyurethane material in the thermoset polyurethane material. The total pore volume in the range of 55% to 80%. In one embodiment, each of the plurality of closed cell apertures is substantially spherical. In an embodiment, the polishing body further includes a first channel-shaped surface; and a second planar surface opposite the first surface, as set forth in association with FIG. 2G. In one embodiment, the polishing master system homogenizes the body, as explained in more detail below.

在一項例示性實施例中,該複數個閉孔孔隙中之每一者包含由不同於熱固性聚胺酯材料之材料構成之實體外殼。在此一情形中,可藉由在經模製以用於最終墊製作之混合物中包含成孔劑而製作閉孔孔隙,如上文所闡述。 In an exemplary embodiment, each of the plurality of closed cell pores comprises a physical outer shell comprised of a material different from the thermoset polyurethane material. In this case, the closed cell pores can be made by including a pore former in the mixture molded for final pad fabrication, as set forth above.

在另一例示性實施例中,該複數個閉孔孔隙中之每一者包含由不同於熱固性聚胺酯材料之材料構成之實體外殼。該複數個閉孔孔隙之第一部分之實體外殼由不同於該複數個閉孔孔隙之第二部分之實體外殼之材料構成。在此一情形中,可藉由在經模製以用於最終墊製作之混合物中包含兩種類型之成孔劑(例如,膨脹及未膨脹)而製作閉孔孔隙,如上文所闡述。 In another exemplary embodiment, each of the plurality of closed cell pores comprises a physical outer shell comprised of a material different from the thermoset polyurethane material. The physical outer casing of the first portion of the plurality of closed-cell apertures is constructed of a material different from the physical outer casing of the second portion of the plurality of closed-cell apertures. In this case, the closed cell pores can be made by including two types of pore formers (e.g., expanded and unexpanded) in the mixture molded for final pad fabrication, as set forth above.

在另一例示性實施例中,該複數個閉孔孔隙之僅一部分中之每一者包含由不同於熱固性聚胺酯材料之材料構成之實體外殼。在此一情形中,可藉由在經模製以用於最終墊製作之混合物中包含成孔劑及氣泡或液滴兩者而製作閉孔孔隙,如上文所闡述。 In another exemplary embodiment, each of only a portion of the plurality of closed cell apertures comprises a physical outer shell comprised of a material different from the thermoset polyurethane material. In this case, the closed cell pores can be made by including both a pore former and a bubble or droplet in the mixture molded for final pad fabrication, as set forth above.

在另一例示性實施例中,該複數個閉孔孔隙中之每一者不包含不同於熱固性聚胺酯材料之材料之實體外殼。在此一情形中,可藉由在經模製以用於最終墊製作之混合物中包含氣泡或液滴或兩者而製作閉孔孔隙,如上文所闡述。 In another exemplary embodiment, each of the plurality of closed cell pores does not comprise a physical outer shell of a material other than the thermoset polyurethane material. In this case, the closed cell pores can be made by including bubbles or droplets or both in the mixture molded for final pad fabrication, as set forth above.

圖3圖解說明根據本發明之實施例包含全部基於成孔劑填料之閉孔孔隙之低密度拋光墊300之為100倍及300倍放大率之剖面圖。參考圖3,所展示之所有孔隙皆由成孔劑形成,且照此,所有孔隙包含實 體外殼。孔隙之一部分由預膨脹Expancel成孔劑形成。另一部分由在用於製作拋光墊300之模製程序期間膨脹之未膨脹Expancel成孔劑形成。在一項此類實施例中,未膨脹Expancel按設計在低溫下膨脹。模製或鑄造程序溫度高於膨脹溫度且Expancel在模製或鑄造期間迅速地膨脹。墊300之密度係大約0.45且墊中之所有孔隙係閉孔孔隙。 3 illustrates a cross-sectional view of a low density polishing pad 300 comprising all of the closed cell pores based on the pore former filler in accordance with an embodiment of the present invention at 100 times and 300 times magnification. Referring to Figure 3, all of the pores shown are formed from a pore former, and as such, all pores contain Body shell. One portion of the pores is formed by a pre-expanded Expancel porogen. The other portion is formed from an unexpanded Expancel porogen that expands during the molding process used to make the polishing pad 300. In one such embodiment, the unexpanded Expancel is designed to expand at low temperatures. The molding or casting process temperature is above the expansion temperature and Expancel rapidly expands during molding or casting. Pad 300 has a density of about 0.45 and all of the pores in the mat are closed cell pores.

圖4圖解說明根據本發明之實施例包含閉孔孔隙之低密度拋光墊400之為100倍及300倍放大率之剖面圖,該等閉孔孔隙之一部分基於成孔劑填料且該等閉孔孔隙之一部分基於氣泡。參考圖4,所展示之小孔隙由成孔劑形成,且照此包含實體外殼。更具體而言,小孔隙由預膨脹Expancel成孔劑形成。大孔隙使用氣體形成。更具體而言,大孔隙使用就在模製或鑄造之前注入至墊配方混合物中之小量水及表面活性劑形成。在鏈伸長之化學反應期間,存在水與NCO之競爭性化學反應以形成CO2且形成孔。應理解,表面活性劑類型及濃度以及觸媒類型及含量控制孔隙大小及閉孔/開孔孔隙比率。墊400之密度大約係0.37且墊中之孔隙之絕大多數係閉孔孔隙。 4 illustrates a cross-sectional view of a low density polishing pad 400 comprising closed cell voids at 100 times and 300 times magnification, in accordance with an embodiment of the present invention, one of which is based in part on a pore former filler and the closed cells One of the pores is based in part on the bubbles. Referring to Figure 4, the small pores shown are formed of a pore former and, as such, comprise a solid outer shell. More specifically, the small pores are formed by a pre-expanded Expancel porogen. Large pores are formed using a gas. More specifically, the macropores are formed using a small amount of water and a surfactant that is injected into the pad formulation mixture prior to molding or casting. During the chemical reaction of the chain extension, there are competing chemical reaction of water with NCO to form CO 2 and the hole is formed. It should be understood that the type and concentration of surfactant and the type and amount of catalyst control pore size and closed/open pore ratio. The density of the pad 400 is approximately 0.37 and the majority of the apertures in the pad are closed cell pores.

在一態樣中,拋光墊中之孔隙直徑分佈可具有鐘形曲線或單模態分佈。舉例而言,圖5A圖解說明根據本發明之實施例針對低密度拋光墊中之寬單模態孔隙直徑分佈的群體隨孔隙直徑而變之曲線圖。參考圖5A之曲線圖500A,單模態分佈可係相對寬的。作為另一實例,圖5B圖解說明根據本發明之實施例針對低密度拋光墊中之孔隙直徑之窄單模態分佈的群體隨孔隙直徑而變之曲線圖。參考圖5B之曲線圖500B,單模態分佈可係相對窄的。在窄分佈或寬分佈中,僅一個最大直徑群體(諸如為40微米之最大群體)(如作為實例所展示)提供於拋光墊中。 In one aspect, the pore diameter distribution in the polishing pad can have a bell curve or a single mode distribution. For example, Figure 5A illustrates a plot of population versus pore diameter for a broad monomodal pore diameter distribution in a low density polishing pad in accordance with an embodiment of the present invention. Referring to graph 500A of Figure 5A, the single mode distribution can be relatively wide. As another example, FIG. 5B illustrates a plot of population versus narrow pore size for a narrow single mode distribution of pore diameters in a low density polishing pad in accordance with an embodiment of the present invention. Referring to graph 500B of Figure 5B, the single mode distribution can be relatively narrow. In a narrow distribution or a broad distribution, only one largest diameter population (such as the largest population of 40 microns) (as shown by way of example) is provided in the polishing pad.

在另一態樣中,可替代地以雙模態孔隙直徑分佈製作低密度拋光墊。作為一實例,圖6A根據本發明之實施例圖解說明具有大約1:1 之雙模態閉孔孔隙分佈之低密度拋光墊之剖面圖。 In another aspect, a low density polishing pad can alternatively be fabricated with a bimodal pore diameter distribution. As an example, FIG. 6A illustrates having approximately 1:1 in accordance with an embodiment of the present invention. A cross-sectional view of a low density polishing pad of a bimodal closed cell pore distribution.

參考圖6A,拋光墊600包含均質拋光主體601。均質拋光主體601由熱固性聚胺酯材料構成,其中複數個閉孔孔隙602安置於均質拋光主體601中。複數個閉孔孔隙602具有多模態直徑分佈。在一實施例中,多模態直徑分佈係包含小直徑模式604及大直徑模式606之雙模態直徑分佈,如圖6A中所繪示。 Referring to FIG. 6A, polishing pad 600 includes a homogeneous polishing body 601. The homogeneous polishing body 601 is composed of a thermosetting polyurethane material in which a plurality of closed cell apertures 602 are disposed in the homogeneous polishing body 601. A plurality of closed cell apertures 602 have a multimodal diameter distribution. In one embodiment, the multimodal diameter distribution includes a bimodal diameter distribution of the small diameter mode 604 and the large diameter mode 606, as depicted in Figure 6A.

在一實施例中,複數個閉孔孔隙602包含彼此離散之孔隙,如圖6A中所繪示。此與可透過通道彼此連接之開孔孔隙相反,例如常見海綿中之孔隙之情形。在一項實施例中,閉孔孔隙中之每一者包含實體外殼,諸如成孔劑之外殼。然而,在另一實施例中,閉孔孔隙中之某些或所有閉孔孔隙不包含實體外殼。在一實施例中,複數個閉孔孔隙602及因此多模態直徑分佈遍及均質拋光主體601之熱固性聚胺酯材料基本上均等地且均勻地分佈,如圖6A中所繪示。 In one embodiment, the plurality of closed cell apertures 602 comprise discrete apertures from each other, as depicted in Figure 6A. This is in contrast to the open pores that are permeable to each other through channels, such as those in conventional sponges. In one embodiment, each of the closed cell pores comprises a solid outer shell, such as a shell of a porogen. However, in another embodiment, some or all of the closed cell pores in the closed cell pores do not comprise a solid outer shell. In one embodiment, the plurality of closed cell apertures 602 and thus the thermoset polyurethane material having a multimodal diameter distribution throughout the homogeneous polishing body 601 are substantially equally and uniformly distributed, as depicted in Figure 6A.

在一實施例中,複數個閉孔孔隙602之雙模態孔隙直徑分佈可係大約1:1,如圖6A中所繪示。為更佳地圖解說明該概念,圖6B圖解說明根據本發明之實施例針對圖6A之拋光墊中之窄孔隙直徑分佈的群體隨孔隙直徑而變之曲線圖620。圖6C根據圖解說明本發明之實施例針對圖6A之拋光墊中之寬孔隙直徑分佈的群體隨孔隙直徑而變之曲線圖630。 In one embodiment, the bimodal pore diameter distribution of the plurality of closed cell pores 602 can be about 1:1, as depicted in Figure 6A. To illustrate this concept for a better map, FIG. 6B illustrates a graph 620 of a population of narrow pore diameter distributions in the polishing pad of FIG. 6A as a function of pore diameter, in accordance with an embodiment of the present invention. Figure 6C is a graph 630 of a population of broad pore diameter distributions in the polishing pad of Figure 6A as a function of pore diameter, in accordance with an embodiment of the present invention.

參考圖6A至圖6C,大直徑模式606之最大群體之直徑值係小直徑模式604之最大群體之直徑值之大約兩倍。舉例而言,在一項實施例中,大直徑模式606之最大群體之直徑值係大約40微米且小直徑模式604之最大群體之直徑值係大約20微米,如圖6B及圖6C中所繪示。作為另一實例,大直徑模式606之最大群體之直徑值係大約80微米且小直徑模式604之最大群體之直徑值係大約40微米。 Referring to Figures 6A-6C, the diameter of the largest population of large diameter modes 606 is approximately twice the diameter of the largest population of small diameter modes 604. For example, in one embodiment, the largest population of large diameter modes 606 has a diameter value of about 40 microns and the largest population of small diameter modes 604 has a diameter value of about 20 microns, as depicted in Figures 6B and 6C. Show. As another example, the largest population of large diameter modes 606 has a diameter value of about 80 microns and the largest population of small diameter modes 604 has a diameter value of about 40 microns.

參考圖6B之曲線圖620,在一項實施例中,孔隙直徑分佈係窄 的。在特定實施例中,大直徑模式606之群體與小直徑模式604之群體基本上不具有重疊。然而,在另一實施例中,參考圖6C之曲線圖630,孔隙直徑分佈係寬的。在特定實施例中,大直徑模式606之群體與小直徑模式604之群體重疊。應理解,雙模態孔隙直徑分佈不必為1:1,如上文與圖6A至圖6C相關聯地所闡述。此外,雙模態孔隙直徑分佈不必係均勻的。在另一實施例中,閉孔孔隙之多模態直徑分佈遍及熱固性聚胺酯材料係梯度的,具有自第一槽形表面至第二平坦表面之梯度。在一項此類實施例中,梯度多模態直徑分佈係雙模態直徑分佈,該雙模態直徑分佈包含接近第一槽形表面之小直徑模式及接近第二平坦表面之大直徑模式。 Referring to the graph 620 of FIG. 6B, in one embodiment, the pore diameter distribution is narrow of. In a particular embodiment, the population of large diameter patterns 606 does not substantially overlap with the population of small diameter patterns 604. However, in another embodiment, referring to graph 630 of Figure 6C, the pore diameter distribution is broad. In a particular embodiment, the population of large diameter patterns 606 overlaps with the population of small diameter patterns 604. It should be understood that the bimodal pore diameter distribution need not be 1:1 as explained above in association with Figures 6A-6C. Furthermore, the bimodal pore diameter distribution does not have to be uniform. In another embodiment, the multimodal diameter distribution of the closed cell pores is gradient across the thermoset polyurethane material with a gradient from the first trough surface to the second flat surface. In one such embodiment, the gradient multimodal diameter distribution is a bimodal diameter distribution comprising a small diameter pattern proximate to the first trough surface and a large diameter pattern proximate to the second flat surface.

在一實施例中,然後,低密度拋光墊包含具有雙模態直徑分佈之複數個閉孔孔隙,該雙模態直徑分佈包含具有第一大小分佈峰值之第一直徑模式及具有第二不同大小分佈峰值之第二直徑模式。在一項此類實施例中,第一直徑模式之閉孔孔隙各自包含由不同於熱固性聚胺酯材料之材料構成之實體外殼。在特定此類實施例中,第二直徑模式之閉孔孔隙各自包含由不同於熱固性聚胺酯材料之材料構成之實體外殼。在特定此類實施例中,第二直徑模式之閉孔孔隙中之每一者之實體外殼由不同於第一直徑模式之閉孔孔隙之實體外殼之材料之材料構成。 In one embodiment, the low density polishing pad then comprises a plurality of closed cell pores having a bimodal diameter distribution comprising a first diameter pattern having a first size distribution peak and having a second different size The second diameter mode of the distribution peak. In one such embodiment, the first diameter mode closed cell pores each comprise a solid outer shell comprised of a material different from the thermoset polyurethane material. In certain such embodiments, the second diameter mode closed cell pores each comprise a solid outer shell comprised of a material different from the thermoset polyurethane material. In certain such embodiments, the physical outer shell of each of the closed-cell apertures of the second diameter mode is constructed of a material that is different from the material of the solid outer shell of the first diameter mode closed-cell aperture.

在一實施例中,第一直徑模式之第一大小分佈峰值具有大約介於10微米至50微米之範圍內之直徑,且第二直徑模式之第二大小分佈峰值具有大約介於10微米至150微米之範圍內之直徑。在一實施例中,第一直徑模式與第二直徑模式重疊。然而,在另一實施例中,第一直徑模式與第二直徑模式基本上不具有重疊。在一實施例中,第一直徑模式之計數數目之總群體不等於第二直徑模式之計數數目之總群體。然而,在另一實施例中,第一直徑模式之計數數目之總群體大約 等於第二直徑模式之計數數目之總群體。在一實施例中,雙模態直徑分佈遍及熱固性聚胺酯材料基本上均等地分佈。然而,在另一實施例中,雙模態直徑分佈遍及熱固性聚胺酯材料以梯度方式分佈。 In an embodiment, the first size distribution peak of the first diameter mode has a diameter in a range of approximately 10 microns to 50 microns, and the second size distribution peak of the second diameter pattern has a range of approximately 10 microns to 150 The diameter in the range of microns. In an embodiment, the first diameter mode overlaps the second diameter mode. However, in another embodiment, the first diameter mode and the second diameter mode have substantially no overlap. In an embodiment, the total population of the number of counts of the first diameter mode is not equal to the total population of the number of counts of the second diameter mode. However, in another embodiment, the total population of the number of counts of the first diameter mode is approximately A total population equal to the number of counts of the second diameter mode. In one embodiment, the bimodal diameter distribution is substantially equally distributed throughout the thermoset polyurethane material. However, in another embodiment, the bimodal diameter distribution is distributed over the thermosetting polyurethane material in a gradient manner.

在一實施例中,本文中所闡述之低密度拋光墊(諸如拋光墊222、300或400或其上文所闡述之變化)適合於拋光基板。在一項此類實施例中,拋光墊用作擦光輪墊。基板可為用於半導體製造工業中之基板,諸如其上安置有器件或其他層之矽基板。然而,基板可為(諸如但不限於)用於MEMS器件、光罩或太陽能模組之基板。因此,如本文中所使用,提及「用於拋光基板之拋光墊」意欲囊括此等及相關可能性。 In one embodiment, the low density polishing pads (such as polishing pads 222, 300 or 400 or variations thereof set forth herein) as set forth herein are suitable for polishing substrates. In one such embodiment, the polishing pad is used as a wiper pad. The substrate can be a substrate used in the semiconductor manufacturing industry, such as a germanium substrate on which devices or other layers are disposed. However, the substrate can be, for example, but not limited to, a substrate for a MEMS device, a photomask, or a solar module. Thus, as used herein, reference to "a polishing pad for polishing a substrate" is intended to encompass such and related possibilities.

本文中所闡述之低密度拋光墊(諸如拋光墊222、300或400或其上文所闡述之變化)可由熱固性聚胺酯材料之均質拋光主體構成。在一實施例中,均質拋光主體由熱固性閉孔聚胺酯材料構成。在一實施例中,術語「均質」用於指示熱固性閉孔聚胺酯材料之組合物遍及拋光主體之整個組合物係一致的。舉例而言,在一實施例中,術語「均質」排除由(例如)浸漬氈或不同材料之多個層之組合物(複合物)構成之拋光墊。在一實施例中,術語「熱固性」用於指示不可逆地固化之聚合物材料,例如材料之前體藉由固化不可逆地變為不可熔化、不可溶解之聚合物網。舉例而言,在一實施例中,術語「熱固性」排除由(例如)「熱塑性」材料或「熱塑性體」構成之拋光墊-彼等材料由在加熱時變為液體且在充分冷卻時返回至極玻璃態之聚合物構成。應注意,由熱固性材料製得之拋光墊通常由在化學反應中發生反應以形成聚合物之較低分子量前體製作,而由熱塑性材料製得之墊通常藉由以下方式製作:加熱預先存在之聚合物以引起相變化,以使得在物理程序中形成拋光墊。聚胺酯熱固性聚合物可基於其穩定熱性質及機械性質、化學環境耐受性及耐磨性之趨勢經選擇用於製作本文所闡述之拋 光墊。 The low density polishing pads (such as polishing pads 222, 300 or 400 or variations thereof set forth herein) as set forth herein may be comprised of a homogeneous polishing body of thermoset polyurethane material. In one embodiment, the homogeneous polishing body is comprised of a thermoset closed cell polyurethane material. In one embodiment, the term "homogeneous" is used to indicate that the composition of the thermoset closed cell polyurethane material is consistent throughout the entire composition of the polishing body. For example, in one embodiment, the term "homogeneous" excludes polishing pads composed of, for example, impregnated felt or a combination of multiple layers of different materials (composites). In one embodiment, the term "thermosetting" is used to indicate an irreversibly solidified polymeric material, such as a polymer web that is irreversibly rendered infusible and insoluble by curing. For example, in one embodiment, the term "thermosetting" excludes polishing pads composed of, for example, "thermoplastic" materials or "thermoplastics" - which become liquid when heated and return to the pole when sufficiently cooled Composition of a glassy polymer. It should be noted that polishing pads made from thermoset materials are typically made from lower molecular weight precursors that react in a chemical reaction to form a polymer, while pads made from thermoplastic materials are typically made by heating pre-existing The polymer causes a phase change to form a polishing pad in a physical process. Polyurethane thermoset polymers can be selected for use in making the throws described herein based on their tendency to stabilize thermal and mechanical properties, chemical environmental tolerance and abrasion resistance. Light pad.

在一實施例中,均質拋光主體在修整及/或拋光後具有大約介於1微米至5微米均方根之範圍內之拋光表面粗糙度。在一項實施例中,均質拋光主體在修整及/或拋光後具有大約2.35微米均方根之拋光表面粗糙度。在一實施例中,均質拋光主體具有於攝氏25度下大約介於30兆帕(MPa)至120兆帕之範圍內之儲存模數。在另一實施例中,均質拋光主體具有於攝氏25度下大約小於30兆帕(MPa)之儲存模數。在一項實施例中,均質拋光主體具有為大約2.5%之壓縮率。 In one embodiment, the homogeneous polishing body has a polished surface roughness in the range of about 1 micron to 5 micron root mean square after trimming and/or polishing. In one embodiment, the homogeneous polishing body has a polished surface roughness of about 2.35 microns root mean square after trimming and/or polishing. In one embodiment, the homogeneous polishing body has a storage modulus in the range of from about 30 megapascals (MPa) to about 120 megapascals at 25 degrees Celsius. In another embodiment, the homogeneous polishing body has a storage modulus of less than about 30 megapascals (MPa) at 25 degrees Celsius. In one embodiment, the homogeneously polished body has a compression ratio of about 2.5%.

在一實施例中,本文中所闡述之低密度拋光墊(諸如拋光墊222、300或400或其上文所闡述之變化)包含模製均質拋光主體。術語「經模製」用於指示均質拋光主體形成於成型模具中,如上文與圖2A至圖2G相關聯地更詳細闡述。應理解,在其他實施例中,可替代地使用鑄造程序來製作低密度拋光墊,諸如上文所闡述之彼等低密度拋光墊。 In an embodiment, the low density polishing pad (such as polishing pad 222, 300 or 400 or variations thereof as set forth above) as set forth herein comprises a molded homogeneous polishing body. The term "molded" is used to indicate that a homogeneous polishing body is formed in a forming mold, as explained in more detail above in association with Figures 2A-2G. It should be understood that in other embodiments, casting procedures may alternatively be used to make low density polishing pads, such as the low density polishing pads described above.

在一實施例中,均質拋光主體係不透明的。在一項實施例中,術語「不透明」用於指示允許大約10%或更少可見光通過之材料。在一項實施例中,均質拋光主體絕大部分或完全由於遍及均質拋光主體之均質熱固性閉孔聚胺酯材料包含失透填料(例如,作為其中之額外組份)而不透明。在特定實施例中,失透填料係以下材料,諸如但不限於:氮化硼、氟化鈰、石墨、氟化石墨、硫化鉬、硫化鈮、滑石、硫化鉭、二硫化鎢或鐵氟龍。 In one embodiment, the homogeneous polishing master system is opaque. In one embodiment, the term "opaque" is used to indicate a material that allows about 10% or less of visible light to pass through. In one embodiment, the homogeneous polishing body is largely or completely opaque because the homogeneous thermoset closed cell polyurethane material throughout the homogeneous polishing body comprises a devitrified filler (eg, as an additional component thereof). In a particular embodiment, the devitrification filler is a material such as, but not limited to, boron nitride, barium fluoride, graphite, graphite fluoride, molybdenum sulfide, barium sulfide, talc, barium sulfide, tungsten disulfide or Teflon. .

諸如墊222、300或400之低密度拋光墊之定大小可根據應用而變化。然而,特定參數可用於製作與習用處理設備或甚至與習用化學機械處理操作相容之拋光墊。舉例而言,根據本發明之實施例,低密度拋光墊具有大約介於0.075英吋至0.130英吋之範圍內(例如,大約介於1.9毫米至3.3毫米之範圍內)之厚度。在一項實施例中,低密度拋光墊 具有大約介於20英吋至30.3英吋之範圍內(例如大約介於50釐米至77釐米之範圍內)且可能大約介於10英吋至42英吋之範圍內(例如大約介於25釐米至107釐米之範圍內)之直徑。 The size of the low density polishing pad, such as pad 222, 300 or 400, can vary depending on the application. However, specific parameters can be used to make polishing pads that are compatible with conventional processing equipment or even with conventional chemical mechanical processing operations. For example, in accordance with an embodiment of the present invention, the low density polishing pad has a thickness in the range of from about 0.075 inches to 0.130 inches (eg, in the range of from about 1.9 mm to 3.3 mm). In one embodiment, a low density polishing pad Having a range of between about 20 inches and 30.3 inches (eg, between about 50 centimeters and 77 centimeters) and possibly between about 10 inches and 42 inches (eg, about 25 centimeters) The diameter to the extent of 107 cm).

在本發明之另一實施例中,本文中所闡述之低密度拋光墊進一步包含安置於拋光墊中之局域透明(LAT)區域。在一實施例中,LAT區域安置於拋光墊中,且與拋光墊共價接合。受讓於NexPlanar公司之2010年1月13日提出申請之美國專利申請案12/657,135及受讓於NexPlanar公司之2010年9月30日提出申請之美國專利申請案12/895,465中闡述適合LAT區域之實例。在替代或額外實施例中,低密度拋光墊進一步包含安置於拋光表面及拋光主體中之孔口。孔口可容納(例如)包含於拋光工具之台板中之偵測器件。黏合劑薄片安置於拋光主體之後表面上。黏合劑薄片在拋光主體之後表面處為孔口提供不透水密封。受讓於NexPlanar公司之2011年7月15日提出申請之美國專利申請案13/184,395中闡述適合孔口之實例。在另一實施例中,低密度拋光墊進一步包含供與(例如)渦流偵測系統一起使用之偵測區域。受讓於NexPlanar公司之2010年9月30日提出申請之美國專利申請案12/895,465中闡述適合渦流偵測區域之實例。 In another embodiment of the invention, the low density polishing pad described herein further comprises a localized transparent (LAT) region disposed in the polishing pad. In an embodiment, the LAT region is disposed in the polishing pad and is covalently bonded to the polishing pad. U.S. Patent Application Serial No. 12/657,135, filed on Jan. 13, 2010, to the entire entire entire entire entire entire entire entire content An example. In an alternative or additional embodiment, the low density polishing pad further includes an aperture disposed in the polishing surface and in the polishing body. The aperture can house, for example, a detection device contained in a platen of the polishing tool. The adhesive sheet is placed on the rear surface of the polishing body. The adhesive sheet provides a watertight seal to the orifice at the surface behind the polishing body. An example of a suitable orifice is set forth in U.S. Patent Application Serial No. 13/184,395, filed on Jan. 15, 2011. In another embodiment, the low density polishing pad further includes a detection area for use with, for example, an eddy current detection system. An example suitable for an eddy current detection zone is set forth in U.S. Patent Application Serial No. 12/895,465, filed on Sep. 30, 2010.

本文中所闡述之低密度拋光墊(諸如拋光墊222、300或400或其上文所闡述之變化)可進一步包含安置於拋光主體之後表面上之基礎層。在一項此類實施例中,結果係具有不同於拋光表面之材料之塊體或基礎材料之拋光墊。在一項實施例中,複合拋光墊包含拋光表面層安置至其上之由穩定、基本上不可壓縮惰性材料製作之基礎或塊體層。較硬基礎層可為墊完整性提供支撐及強度,而較軟拋光表面層可減少刮痕,從而達成拋光層之材料性質與拋光墊之剩餘部分之解嚙合。受讓於NexPlanar公司之2011年11月29日提出申請之美國專利申請案13/306,845中闡述適合基礎層之實例。 The low density polishing pad (such as polishing pad 222, 300 or 400 or variations thereof as set forth above) as set forth herein may further comprise a base layer disposed on the rear surface of the polishing body. In one such embodiment, the result is a polishing pad having a block or base material that is different from the material of the polishing surface. In one embodiment, the composite polishing pad comprises a base or block layer of a stable, substantially incompressible inert material to which the polishing surface layer is disposed. The harder base layer provides support and strength to the pad integrity, while the softer polished surface layer reduces scratches, thereby achieving the disengagement of the material properties of the polishing layer from the remainder of the polishing pad. Examples of suitable base layers are set forth in U.S. Patent Application Serial No. 13/306,845, filed on Nov. 29, 2011.

本文中所闡述之低密度拋光墊(諸如拋光墊222、300或400或其上文所闡述之變化)可進一步包含安置於拋光主體之後表面上之子墊,例如,如CMP技術中已知之習用子墊。在一項此類實施例中,子墊由諸如(但不限於)泡沫、橡膠、纖維、毛氈或高孔隙度材料之材料構成。 The low density polishing pad (such as polishing pad 222, 300 or 400 or variations thereof as set forth above) as set forth herein may further comprise a subpad disposed on the rear surface of the polishing body, for example, as is known in the art of CMP. pad. In one such embodiment, the subpad is constructed from materials such as, but not limited to, foam, rubber, fiber, felt, or high porosity materials.

再次參考圖2G,作為說明之基礎,形成於低密度拋光墊(諸如本文中所闡述之彼等低密度拋光墊)中之凹槽圖案之個別凹槽在每一凹槽上之任一給定點處可係自約4密耳至約100密耳深。在某些實施例中,凹槽在每一凹槽上之任一給定點處係約10密耳至約50密耳深。凹槽可具有均勻深度、可變深度或其任何組合。在某些實施例中,凹槽全部具有均勻深度。舉例而言,凹槽圖案之凹槽可全部具有相同深度。在某些實施例中,凹槽圖案之凹槽中之某些凹槽可具有特定均勻深度,而同一圖案之其他凹槽可具有不同均勻深度。舉例而言,凹槽深度可隨著距拋光墊之中心之距離增加而增加。然而,在某些實施例中,凹槽深度隨著距拋光墊之中心之距離增加而減小。在某些實施例中,均勻深度之凹槽與可變深度之凹槽交替。 Referring again to FIG. 2G, as a basis for illustration, individual grooves of the groove pattern formed in a low density polishing pad, such as the low density polishing pads described herein, at any given point on each groove It can be from about 4 mils to about 100 mils deep. In some embodiments, the grooves are from about 10 mils to about 50 mils deep at any given point on each groove. The grooves can have a uniform depth, a variable depth, or any combination thereof. In some embodiments, the grooves all have a uniform depth. For example, the grooves of the groove pattern may all have the same depth. In some embodiments, some of the grooves of the groove pattern may have a particular uniform depth, while other grooves of the same pattern may have different uniform depths. For example, the groove depth may increase as the distance from the center of the polishing pad increases. However, in some embodiments, the groove depth decreases as the distance from the center of the polishing pad increases. In some embodiments, the grooves of uniform depth alternate with the grooves of variable depth.

形成於低密度拋光墊(諸如本文中所闡述之彼等低密度拋光墊)中之凹槽圖案之個別凹槽在每一凹槽上之任一給定點處可係自約2密耳至約100密耳寬。在某些實施例中,凹槽在每一凹槽上之任一給定點處係約15密耳至約50密耳寬。凹槽可具有均勻寬度、可變寬度或其任何組合。在某些實施例中,凹槽全部具有均勻寬度。然而,在某些實施例中,同心之凹槽中之某些凹槽具有特定均勻寬度,而同一圖案之其他凹槽具有不同均勻寬度。在某些實施例中,凹槽寬度隨著距拋光墊之中心之距離增加而增加。在某些實施例中,凹槽寬度隨著距拋光墊之中心之距離增加而減小。在某些實施例中,均勻寬度之凹槽與可變寬度之凹槽交替。 The individual grooves of the groove pattern formed in the low density polishing pad (such as the low density polishing pads described herein) can be from about 2 mils to about any given point on each groove. 100 mils wide. In some embodiments, the grooves are from about 15 mils to about 50 mils wide at any given point on each of the grooves. The grooves can have a uniform width, a variable width, or any combination thereof. In some embodiments, the grooves all have a uniform width. However, in some embodiments, some of the grooves in the concentric grooves have a particular uniform width, while other grooves in the same pattern have different uniform widths. In some embodiments, the groove width increases as the distance from the center of the polishing pad increases. In some embodiments, the groove width decreases as the distance from the center of the polishing pad increases. In some embodiments, the grooves of uniform width alternate with the grooves of variable width.

根據先前所闡述之深度及寬度尺寸,本文中所闡述之凹槽圖案之個別凹槽(包含在拋光墊中之孔口之一位置處或附近)可具有均勻體積、可變體積或其任何組合。在某些實施例中,凹槽全部具有均勻體積。然而,在某些實施例中,凹槽體積隨著距拋光墊之中心之距離增加而增加。在某些其他實施例中,凹槽體積隨著距拋光墊之中心之距離增加而減小。在某些實施例中,均勻體積之凹槽與可變體積之凹槽交替。 The individual grooves of the groove pattern (including at or near one of the orifices in the polishing pad) as described herein may have a uniform volume, a variable volume, or any combination thereof, depending on the depth and width dimensions previously set forth. . In some embodiments, the grooves all have a uniform volume. However, in some embodiments, the groove volume increases as the distance from the center of the polishing pad increases. In certain other embodiments, the groove volume decreases as the distance from the center of the polishing pad increases. In some embodiments, the grooves of uniform volume alternate with the grooves of variable volume.

本文中所闡述之凹槽圖案之凹槽可具有約30密耳至約1000密耳之間距。在某些實施例中,凹槽具有約125密耳之間距。對於圓形拋光墊而言,沿著圓形拋光墊之半徑量測凹槽間距。在CMP帶中,自CMP帶之中心至CMP帶之邊緣量測凹槽間距。凹槽可具有均勻間距、可變間距或其任何組合。在某些實施例中,凹槽全部具有均勻間距。然而,在某些實施例中,凹槽間距隨著距拋光墊之中心之距離增加而增加。在某些其他實施例中,凹槽間距隨著距拋光墊之中心之距離增加而減小。在某些實施例中,一個扇區中之凹槽之間距隨著距拋光墊之中心之距離增加而變化,而毗鄰扇區中之凹槽之間距保持均勻。在某些實施例中,一個扇區中之凹槽之間距隨著距拋光墊之中心之距離增加而增加,而毗鄰扇區中之凹槽之間距以不同速率增加。在某些實施例中,一個扇區中之凹槽之間距隨著距拋光墊之中心之距離增加而增加,而毗鄰扇區中之凹槽之間距隨著距拋光墊之中心之距離增加而減小。在某些實施例中,均勻間距之凹槽與可變間距之凹槽交替。在某些實施例中,均勻間距之凹槽之扇區與可變間距之凹槽之扇區交替。 The grooves of the groove pattern set forth herein may have a spacing of from about 30 mils to about 1000 mils. In some embodiments, the grooves have a spacing of about 125 mils. For a circular polishing pad, the groove spacing is measured along the radius of the circular polishing pad. In the CMP tape, the groove pitch is measured from the center of the CMP tape to the edge of the CMP tape. The grooves can have a uniform pitch, a variable pitch, or any combination thereof. In some embodiments, the grooves all have a uniform spacing. However, in some embodiments, the groove pitch increases as the distance from the center of the polishing pad increases. In certain other embodiments, the groove pitch decreases as the distance from the center of the polishing pad increases. In some embodiments, the distance between the grooves in one sector varies with increasing distance from the center of the polishing pad, while the spacing between the grooves in adjacent sectors remains uniform. In some embodiments, the distance between the grooves in one sector increases with increasing distance from the center of the polishing pad, while the spacing between grooves in adjacent sectors increases at different rates. In some embodiments, the distance between the grooves in one sector increases as the distance from the center of the polishing pad increases, and the distance between the grooves in the adjacent sectors increases with distance from the center of the polishing pad. Reduced. In some embodiments, the uniformly spaced grooves alternate with the variable pitch grooves. In some embodiments, the sectors of the uniformly spaced grooves alternate with the sectors of the variable pitch grooves.

本文中所闡述之拋光墊可適於與多種化學機械拋光裝置一起使用。作為一實例,圖7根據本發明之實施例圖解說明與低密度拋光墊相容之拋光裝置之等角側視圖。 The polishing pads described herein can be adapted for use with a variety of chemical mechanical polishing devices. As an example, Figure 7 illustrates an isometric side view of a polishing apparatus compatible with a low density polishing pad in accordance with an embodiment of the present invention.

參考圖7,拋光裝置700包含台板704。台板704之頂部表面702可用於支撐低密度拋光墊。台板704可經組態以提供心軸旋轉706及滑件振盪708。在使用拋光墊拋光半導體晶圓期間,樣本載體710用於將(例如)半導體晶圓711固持在適當位置。樣本載體710進一步由懸掛機構712支撐。在拋光半導體晶圓之前及期間,包含漿液進料714以為拋光墊之表面提供漿液。亦可包含修整單元790,且在一項實施例中,修整單元1090包含用於修整拋光墊之金剛石尖。 Referring to Figure 7, the polishing apparatus 700 includes a platen 704. The top surface 702 of the platen 704 can be used to support a low density polishing pad. The platen 704 can be configured to provide a mandrel rotation 706 and a slider oscillation 708. During polishing of the semiconductor wafer using the polishing pad, the sample carrier 710 is used to hold, for example, the semiconductor wafer 711 in place. The sample carrier 710 is further supported by a suspension mechanism 712. A slurry feed 714 is included to provide a slurry for the surface of the polishing pad before and during polishing of the semiconductor wafer. A trim unit 790 can also be included, and in one embodiment, the trim unit 1090 includes a diamond tip for trimming the polishing pad.

因此,已揭示低密度拋光墊及製作低密度拋光墊之方法。根據本發明之實施例,用於拋光基板之拋光墊包含具有小於0.5g/cc之密度且由熱固性聚胺酯材料構成之拋光主體。複數個閉孔孔隙分散於熱固性聚胺酯材料中。在一項實施例中,拋光主體係均質拋光主體。 Thus, low density polishing pads and methods of making low density polishing pads have been disclosed. In accordance with an embodiment of the present invention, a polishing pad for polishing a substrate comprises a polishing body having a density of less than 0.5 g/cc and composed of a thermosetting polyurethane material. A plurality of closed cell pores are dispersed in the thermosetting polyurethane material. In one embodiment, the polishing master system homogenizes the body.

214‧‧‧微量元素 214‧‧‧ trace elements

218‧‧‧最終較大大小/膨脹微量元素/最終大小/微量元素 218‧‧‧Final larger size/expansion trace elements/final size/trace elements

220‧‧‧墊材料/低密度拋光墊/固化材料/熱固性聚胺酯材料 220‧‧‧Mat material/low density polishing pad/curing material/thermosetting polyurethane material

222‧‧‧低密度拋光墊/墊/模製拋光主體/拋光主體/拋光墊/不透明模製拋光主體/模製均質拋光主體 222‧‧‧Low-density polishing pad/pad/molding polishing body/polishing body/polishing pad/opaque molding polishing body/molding homogeneous polishing body

224‧‧‧拋光表面 224‧‧‧ Polished surface

226‧‧‧徑向凹槽 226‧‧‧radial grooves

228‧‧‧同心圓形凹槽 228‧‧‧Concentric circular groove

a-a’‧‧‧軸 A-a’‧‧‧ axis

Claims (60)

一種用於拋光基板之拋光墊,該拋光墊包括:拋光主體,其具有小於0.5g/cc之密度且包括:熱固性聚胺酯材料;及複數個閉孔孔隙,其分散於該熱固性聚胺酯材料中,其中該複數個閉孔孔隙具有雙模態直徑分佈,該雙模態直徑分佈包含具有第一大小分佈峰值之第一直徑模式及具有第二不同大小分佈峰值之第二直徑模式。 A polishing pad for polishing a substrate, the polishing pad comprising: a polishing body having a density of less than 0.5 g/cc and comprising: a thermosetting polyurethane material; and a plurality of closed cell pores dispersed in the thermosetting polyurethane material, wherein The plurality of closed-cell pores have a bimodal diameter distribution comprising a first diameter pattern having a first size distribution peak and a second diameter pattern having a second different size distribution peak. 如請求項1之拋光墊,其中該拋光主體係均質拋光主體。 A polishing pad according to claim 1, wherein the polishing main system homogenizes the polishing body. 如請求項1之拋光墊,其中該複數個閉孔孔隙中之每一者包括實體外殼,該實體外殼包括不同於該熱固性聚胺酯材料之材料。 The polishing pad of claim 1, wherein each of the plurality of closed cell apertures comprises a physical outer casing comprising a material different from the thermoset polyurethane material. 如請求項3之拋光墊,其中該複數個閉孔孔隙之第一部分之該等實體外殼包括不同於該複數個閉孔孔隙之第二部分之該等實體外殼之材料。 The polishing pad of claim 3, wherein the physical shells of the first portion of the plurality of closed-cell apertures comprise materials of the physical shells that are different from the second portion of the plurality of closed-cell apertures. 如請求項1之拋光墊,其中該複數個閉孔孔隙之僅一部分中之每一者包括實體外殼,該實體外殼包括不同於該熱固性聚胺酯材料之材料。 The polishing pad of claim 1, wherein each of only a portion of the plurality of closed cell apertures comprises a physical outer casing comprising a material different from the thermoset polyurethane material. 如請求項1之拋光墊,其中該複數個閉孔孔隙中之每一者不包括具有不同於該熱固性聚胺酯材料之材料之實體外殼。 The polishing pad of claim 1, wherein each of the plurality of closed cell pores does not comprise a physical outer shell having a material different from the thermoset polyurethane material. 如請求項1之拋光墊,其中該複數個閉孔孔隙在該熱固性聚胺酯材料中提供大約介於該熱固性聚胺酯材料之總體積之55%至80%之範圍內之總孔隙體積。 The polishing pad of claim 1, wherein the plurality of closed cell pores provide a total pore volume in the thermosetting polyurethane material in a range from about 55% to about 80% of the total volume of the thermosetting polyurethane material. 如請求項1之拋光墊,其中該拋光主體進一步包括:第一表面,該表面為槽形;及與該第一表面相對之第二表面,該第二表面為平坦。 The polishing pad of claim 1, wherein the polishing body further comprises: a first surface having a groove shape; and a second surface opposite the first surface, the second surface being flat. 如請求項1之拋光墊,其中該複數個閉孔孔隙中之每一者係基本上球形的。 The polishing pad of claim 1, wherein each of the plurality of closed cell apertures is substantially spherical. 如請求項1之拋光墊,其中該第一直徑模式之該等閉孔孔隙各自包括實體外殼,該實體外殼包括不同於該熱固性聚胺酯材料之材料。 The polishing pad of claim 1, wherein the closed pore apertures of the first diameter mode each comprise a solid outer shell comprising a material different from the thermoset polyurethane material. 如請求項10之拋光墊,其中該第二直徑模式之該等閉孔孔隙各自包括實體外殼,該實體外殼包括不同於該熱固性聚胺酯材料之材料。 The polishing pad of claim 10, wherein the closed cell apertures of the second diameter mode each comprise a solid outer shell comprising a material different from the thermoset polyurethane material. 如請求項11之拋光墊,該第二直徑模式之該等閉孔孔隙中之每一者之該實體外殼包括不同於該第一直徑模式之該等閉孔孔隙之該等實體外殼之該材料之材料。 The polishing pad of claim 11, wherein the physical outer casing of each of the closed-cell apertures of the second diameter mode comprises the material of the physical outer casings of the closed-cell apertures of the first diameter mode Material. 如請求項1之拋光墊,其中該第一直徑模式之該第一大小分佈峰值具有大約介於10微米至50微米之範圍內之直徑,且其中該第二直徑模式之該第二大小分佈峰值具有大約介於10微米至150微米之範圍內之直徑。 The polishing pad of claim 1, wherein the first size distribution peak of the first diameter mode has a diameter in a range of approximately 10 microns to 50 microns, and wherein the second size distribution peak of the second diameter pattern It has a diameter in the range of approximately 10 microns to 150 microns. 如請求項1之拋光墊,其中該第一直徑模式與該第二直徑模式重疊。 The polishing pad of claim 1, wherein the first diameter pattern overlaps the second diameter pattern. 如請求項1之拋光墊,其中該第一直徑模式與該第二直徑模式基本上不具有重疊。 The polishing pad of claim 1, wherein the first diameter mode has substantially no overlap with the second diameter mode. 如請求項1之拋光墊,其中該第一直徑模式之計數數目之總群體不等於該第二直徑模式之計數數目之總群體。 The polishing pad of claim 1, wherein the total population of the number of counts of the first diameter mode is not equal to the total population of the number of counts of the second diameter mode. 如請求項1之拋光墊,其中該第一直徑模式之計數數目之總群體大約等於該第二直徑模式之計數數目之總群體。 The polishing pad of claim 1, wherein the total population of the number of counts of the first diameter pattern is approximately equal to a total population of the number of counts of the second diameter pattern. 如請求項1之拋光墊,其中該雙模態直徑分佈遍及該熱固性聚胺酯材料基本上均等地分佈。 A polishing pad according to claim 1, wherein the bimodal diameter distribution is substantially equally distributed throughout the thermosetting polyurethane material. 如請求項1之拋光墊,其中該拋光主體係模製拋光主體。 A polishing pad according to claim 1, wherein the polishing master system molds the polishing body. 如請求項1之拋光墊,其中該拋光主體進一步包括:失透填料,其遍及該拋光主體大約均等地分佈。 The polishing pad of claim 1, wherein the polishing body further comprises: a devitrified filler distributed approximately equally throughout the polishing body. 如請求項1之拋光墊,其進一步包括:基礎層,其安置於該拋光主體之後表面上。 A polishing pad according to claim 1, further comprising: a base layer disposed on a rear surface of the polishing body. 如請求項1之拋光墊,其進一步包括:偵測區域,其安置於該拋光主體之後表面中。 The polishing pad of claim 1, further comprising: a detection area disposed in a rear surface of the polishing body. 如請求項1之拋光墊,其進一步包括:子墊,其安置於該拋光主體之後表面上。 The polishing pad of claim 1, further comprising: a subpad disposed on a rear surface of the polishing body. 如請求項1之拋光墊,其進一步包括:局域透明(LAT)區域,其安置於該拋光主體中且與該拋光主體共價接合。 The polishing pad of claim 1, further comprising: a localized transparent (LAT) region disposed in the polishing body and covalently bonded to the polishing body. 一種用於拋光基板之拋光墊,該拋光墊包括:拋光主體,其具有小於大約0.6g/cc之密度且包括:熱固性聚胺酯材料;及複數個閉孔孔隙,其分散於該熱固性聚胺酯材料中,該複數個閉孔孔隙具有雙模態直徑分佈,該雙模態直徑分佈包含具有第一大小分佈峰值之第一直徑模式及具有第二不同大小分佈峰值之第二直徑模式。 A polishing pad for polishing a substrate, the polishing pad comprising: a polishing body having a density of less than about 0.6 g/cc and comprising: a thermosetting polyurethane material; and a plurality of closed cell pores dispersed in the thermosetting polyurethane material, The plurality of closed-cell pores have a bimodal diameter distribution comprising a first diameter pattern having a first size distribution peak and a second diameter pattern having a second different size distribution peak. 如請求項25之拋光墊,其中該拋光主體係均質拋光主體。 A polishing pad according to claim 25, wherein the polishing main system homogenizes the polishing body. 如請求項25之拋光墊,其中該第一直徑模式之該等閉孔孔隙各自包括實體外殼,該實體外殼包括不同於該熱固性聚胺酯材料之材料。 The polishing pad of claim 25, wherein the closed cell apertures of the first diameter mode each comprise a solid outer shell comprising a material different from the thermoset polyurethane material. 如請求項27之拋光墊,其中該第二直徑模式之該等閉孔孔隙各自包括實體外殼,該實體外殼包括不同於該熱固性聚胺酯材料之材料。 The polishing pad of claim 27, wherein the closed cell apertures of the second diameter mode each comprise a solid outer shell comprising a material different from the thermoset polyurethane material. 如請求項28之拋光墊,該第二直徑模式之該等閉孔孔隙中之每 一者之該實體外殼包括不同於該第一直徑模式之該等閉孔孔隙之該等實體外殼之該材料之材料。 a polishing pad of claim 28, each of the closed pores of the second diameter mode The physical outer casing of one of the materials includes the material of the material of the physical outer casings of the closed pores of the first diameter mode. 如請求項25之拋光墊,其中該第一直徑模式之該第一大小分佈峰值具有大約介於10微米至50微米之範圍內之直徑,且其中該第二直徑模式之該第二大小分佈峰值具有大約介於10微米至150微米之範圍內之直徑。 The polishing pad of claim 25, wherein the first size distribution peak of the first diameter mode has a diameter in a range from about 10 microns to 50 microns, and wherein the second size distribution peak of the second diameter pattern It has a diameter in the range of approximately 10 microns to 150 microns. 如請求項25之拋光墊,其中該第一直徑模式與該第二直徑模式重疊。 The polishing pad of claim 25, wherein the first diameter pattern overlaps the second diameter pattern. 如請求項25之拋光墊,其中該第一直徑模式與該第二直徑模式基本上不具有重疊。 The polishing pad of claim 25, wherein the first diameter mode has substantially no overlap with the second diameter mode. 如請求項25之拋光墊,其中該第一直徑模式之計數數目之總群體不等於該第二直徑模式之計數數目之總群體。 The polishing pad of claim 25, wherein the total population of the number of counts of the first diameter pattern is not equal to the total population of the number of counts of the second diameter pattern. 如請求項25之拋光墊,其中該第一直徑模式之計數數目之總群體大約等於該第二直徑模式之計數數目之總群體。 A polishing pad according to claim 25, wherein the total population of the number of counts of the first diameter pattern is approximately equal to a total population of the number of counts of the second diameter pattern. 如請求項25之拋光墊,其中該雙模態直徑分佈遍及該熱固性聚胺酯材料基本上均等地分佈。 A polishing pad according to claim 25, wherein the bimodal diameter distribution is substantially equally distributed throughout the thermosetting polyurethane material. 一種製作拋光墊之方法,該方法包括:混合預聚合物及鏈伸長劑或交聯劑與複數個微量元素以形成混合物,該複數個微量元素中之每一者具有初始大小;及在成型模具中加熱該混合物以提供模製拋光主體,該模製拋光主體包括熱固性聚胺酯材料及分散於該熱固性聚胺酯材料中之複數個閉孔孔隙,該複數個閉孔孔隙藉由在該加熱期間使該複數個微量元素中之每一者膨脹至最終較大大小而形成。 A method of making a polishing pad, the method comprising: mixing a prepolymer and a chain extender or a crosslinking agent with a plurality of trace elements to form a mixture, each of the plurality of trace elements having an initial size; and in a molding die Heating the mixture to provide a molded polishing body, the molded polishing body comprising a thermosetting polyurethane material and a plurality of closed cell pores dispersed in the thermosetting polyurethane material, the plurality of closed cell pores being made by the plural during the heating Each of the trace elements is expanded to a final larger size to form. 如請求項36之方法,其中使該複數個微量元素中之每一者膨脹至該最終大小包括使該複數個微量元素中之每一者之體積增加大約介於3至1000之範圍內之倍數。 The method of claim 36, wherein expanding each of the plurality of trace elements to the final size comprises increasing a volume of each of the plurality of trace elements by a factor of between about 3 and 1000 . 如請求項36之方法,其中使該複數個微量元素中之每一者膨脹至該最終大小包括將該複數個微量元素中之每一者之最終直徑提供為大約介於10微米至200微米之範圍內。 The method of claim 36, wherein expanding each of the plurality of trace elements to the final size comprises providing a final diameter of each of the plurality of trace elements to between about 10 microns and 200 microns Within the scope. 如請求項36之方法,其中使該複數個微量元素中之每一者膨脹至該最終大小包括使該複數個微量元素中之每一者之密度減小大約介於3至1000之範圍內之倍數。 The method of claim 36, wherein expanding each of the plurality of trace elements to the final size comprises reducing a density of each of the plurality of trace elements by between about 3 and 1000 multiple. 如請求項36之方法,其中使該複數個微量元素中之每一者膨脹至該最終大小包括針對該最終大小之該複數個微量元素中之每一者形成基本上球形形狀。 The method of claim 36, wherein expanding each of the plurality of trace elements to the final size comprises forming a substantially spherical shape for each of the plurality of trace elements of the final size. 如請求項36之方法,其中將該預聚合物及該鏈伸長劑或交聯劑與該複數個微量元素混合進一步包括與第二複數個微量元素混合以形成該混合物,該第二複數個微量元素中之每一者具有一大小。 The method of claim 36, wherein mixing the prepolymer and the chain extender or crosslinker with the plurality of trace elements further comprises mixing with the second plurality of trace elements to form the mixture, the second plurality of traces Each of the elements has a size. 如請求項41之方法,其中該加熱在足夠低以使得該第二複數個微量元素中之每一者之該大小在該加熱之前及該加熱之後係基本上相同之溫度下執行。 The method of claim 41, wherein the heating is performed sufficiently low that the size of each of the second plurality of trace elements is performed at substantially the same temperature prior to the heating and after the heating. 如請求項42之方法,其中該加熱在大約攝氏100度或更低之溫度下執行,且其中該第二複數個微量元素具有大於大約攝氏130度之膨脹臨限值。 The method of claim 42, wherein the heating is performed at a temperature of about 100 degrees Celsius or less, and wherein the second plurality of trace elements have an expansion threshold greater than about 130 degrees Celsius. 如請求項41之方法,其中該第二複數個微量元素具有大於該複數個微量元素之膨脹臨限值之膨脹臨限值。 The method of claim 41, wherein the second plurality of trace elements have an expansion threshold greater than an expansion threshold of the plurality of trace elements. 如請求項44之方法,其中該第二複數個微量元素之該膨脹臨限值大於大約攝氏120度,且該複數個微量元素之該膨脹臨限值小於大約攝氏110度。 The method of claim 44, wherein the expansion threshold of the second plurality of trace elements is greater than about 120 degrees Celsius, and the expansion threshold of the plurality of trace elements is less than about 110 degrees Celsius. 如請求項41之方法,其中該預聚合物、該鏈伸長劑或交聯劑及該第二複數個微量元素之混合物具有一黏度,且該預聚合物、 該鏈伸長劑或交聯劑、該複數個微量元素之該混合物具有該初始大小,且該第二複數個微量元素基本上具有該黏度。 The method of claim 41, wherein the prepolymer, the chain extender or crosslinker, and the second plurality of trace elements have a viscosity, and the prepolymer, The chain extender or crosslinker, the mixture of the plurality of trace elements has the initial size, and the second plurality of trace elements have substantially the viscosity. 如請求項46之方法,其中該黏度係預定黏度,且該混合物中之該第二複數個微量元素之相對量係基於該預定黏度而選擇。 The method of claim 46, wherein the viscosity is a predetermined viscosity and the relative amount of the second plurality of trace elements in the mixture is selected based on the predetermined viscosity. 如請求項46之方法,其中該複數個微量元素對該混合物之該黏度幾乎不具有影響。 The method of claim 46, wherein the plurality of trace elements have little effect on the viscosity of the mixture. 如請求項41之方法,其中加熱提供該模製拋光主體,該模製拋光主體包括該熱固性聚胺酯材料,該複數個閉孔孔隙分散於該熱固性聚胺酯材料中且藉由使該複數個微量元素中之每一者膨脹至包含具有第一大小分佈峰值之第一直徑模式之該最終大小而形成,且第二複數個閉孔孔隙分散於該熱固性聚胺酯材料中且由包含具有第二不同大小分佈峰值之第二直徑模式之該第二複數個微量元素形成。 The method of claim 41, wherein the heating provides the molded polishing body, the molded polishing body comprising the thermosetting polyurethane material, the plurality of closed pore pores being dispersed in the thermosetting polyurethane material and by making the plurality of trace elements Each of which is formed by expanding to a final size comprising a first diameter pattern having a peak of a first size distribution, and a second plurality of closed cell pores are dispersed in the thermoset polyurethane material and comprising a peak having a second different size distribution The second plurality of trace elements of the second diameter mode are formed. 如請求項49之方法,其中該複數個閉孔孔隙及該第二複數個閉孔孔隙在該熱固性聚胺酯材料中提供大約介於該熱固性聚胺酯材料之該總體積之55%至80%之範圍內之總孔隙體積。 The method of claim 49, wherein the plurality of closed cell pores and the second plurality of closed cell pores provide about 55% to 80% of the total volume of the thermosetting polyurethane material in the thermosetting polyurethane material The total pore volume. 如請求項36之方法,其中加熱該混合物以提供該模製拋光主體包括形成具有小於0.5g/cc之密度之該拋光主體。 The method of claim 36, wherein heating the mixture to provide the molded polishing body comprises forming the polishing body having a density of less than 0.5 g/cc. 如請求項51之方法,其中該混合物在該加熱之前具有大於0.5g/cc之密度。 The method of claim 51, wherein the mixture has a density greater than 0.5 g/cc prior to the heating. 如請求項36之方法,其中該混合進一步包括將氣體注入至該預聚合物及該鏈伸長劑或交聯劑中,或注入至由其形成之產物中。 The method of claim 36, wherein the mixing further comprises injecting a gas into the prepolymer and the chain extender or crosslinker, or into a product formed therefrom. 如請求項36之方法,其中該預聚合物係異氰酸酯且該混合進一步包括將水添加至該預聚合物。 The method of claim 36, wherein the prepolymer is an isocyanate and the mixing further comprises adding water to the prepolymer. 如請求項36之方法,其中混合該預聚合物及該鏈伸長劑或交聯 劑包括分別混合異氰酸酯及芳香族雙胺化合物。 The method of claim 36, wherein the prepolymer and the chain extender or crosslink are mixed The agent includes a mixture of an isocyanate and an aromatic bisamine compound, respectively. 如請求項36之方法,其中該混合進一步包括將失透填料添加至該預聚合物及該鏈伸長劑或交聯劑以提供不透明模製拋光主體。 The method of claim 36, wherein the mixing further comprises adding a devitrified filler to the prepolymer and the chain extender or crosslinker to provide an opaque molded polishing body. 如請求項36之方法,其中加熱該混合物包括首先在該成型模具中部分地固化及然後在爐中進一步固化。 The method of claim 36, wherein heating the mixture comprises first partially curing in the forming mold and then further curing in the furnace. 如請求項36之方法,其中在該成型模具中加熱包括在該模製拋光主體之拋光表面中形成凹槽圖案。 The method of claim 36, wherein heating in the forming mold comprises forming a groove pattern in the polishing surface of the molded polishing body. 如請求項36之方法,其中具有該初始大小之該複數個微量元素中之每一者包括實體外殼,且其中具有該最終大小之該複數個微量元素中之每一者包括膨脹實體外殼。 The method of claim 36, wherein each of the plurality of trace elements having the initial size comprises a solid outer shell, and wherein each of the plurality of trace elements having the final size comprises an expanded solid outer shell. 如請求項36之方法,其中具有該初始大小之該複數個微量元素中之每一者係液滴,且其中具有該最終大小之該複數個微量元素中之每一者係氣泡。 The method of claim 36, wherein each of the plurality of trace elements having the initial size is a droplet, and wherein each of the plurality of trace elements having the final size is a bubble.
TW103126073A 2013-07-31 2014-07-30 Low density polishing pad TWI579106B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/955,398 US20150038066A1 (en) 2013-07-31 2013-07-31 Low density polishing pad

Publications (2)

Publication Number Publication Date
TW201509595A TW201509595A (en) 2015-03-16
TWI579106B true TWI579106B (en) 2017-04-21

Family

ID=51263570

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103126073A TWI579106B (en) 2013-07-31 2014-07-30 Low density polishing pad

Country Status (8)

Country Link
US (1) US20150038066A1 (en)
EP (1) EP3027363B1 (en)
JP (3) JP6517802B2 (en)
KR (1) KR101801693B1 (en)
CN (1) CN105408063B (en)
SG (1) SG11201600242PA (en)
TW (1) TWI579106B (en)
WO (1) WO2015017138A1 (en)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US9586304B2 (en) * 2014-12-19 2017-03-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-expansion CMP PAD casting method
US10005172B2 (en) * 2015-06-26 2018-06-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-porosity method for forming polishing pad
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
CN108698206B (en) 2016-01-19 2021-04-02 应用材料公司 Porous chemical mechanical polishing pad
JP7148226B2 (en) 2016-09-21 2022-10-05 東友ファインケム株式会社 Red curable resin composition
US20180304539A1 (en) 2017-04-21 2018-10-25 Applied Materials, Inc. Energy delivery system with array of energy sources for an additive manufacturing apparatus
US20180345449A1 (en) * 2017-06-06 2018-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pads for improved removal rate and planarization
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
KR101949905B1 (en) 2017-08-23 2019-02-19 에스케이씨 주식회사 Porous polyurethane polishing pad and preparation method thereof
WO2019038675A1 (en) * 2017-08-25 2019-02-28 3M Innovative Properties Company Surface projection polishing pad
KR102088919B1 (en) 2017-09-11 2020-03-13 에스케이씨 주식회사 Porous polyurethane polishing pad and preparation method thereof
KR101949911B1 (en) 2017-09-11 2019-02-19 에스케이씨 주식회사 Porous polyurethane polishing pad and preparation method thereof
CN115106930A (en) 2017-09-11 2022-09-27 Skc索密思株式会社 Porous polyurethane polishing pad and preparation method thereof
KR102054309B1 (en) 2018-04-17 2019-12-10 에스케이씨 주식회사 Porous polishing pad and preparation method thereof
KR102058877B1 (en) 2018-04-20 2019-12-24 에스케이씨 주식회사 POROUS POLYURETHANE POLISHING PAD and PREPARATION METHOD THEREOF
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
KR102283399B1 (en) 2018-12-26 2021-07-30 에스케이씨솔믹스 주식회사 Composition for polishing pad, polishing pad and preparation method thereof
KR20200079847A (en) 2018-12-26 2020-07-06 에스케이씨 주식회사 Composition for polishing pad, polishing pad and preparation method thereof
KR20200079865A (en) 2018-12-26 2020-07-06 에스케이씨 주식회사 Composition for polishing pad, polishing pad and preparation method thereof
KR102185265B1 (en) 2018-12-26 2020-12-01 에스케이씨 주식회사 Composition for polishing pad, polishing pad and preparation method thereof
KR102202076B1 (en) 2018-12-26 2021-01-12 에스케이씨 주식회사 Composition for polishing pad, polishing pad and preparation method thereof
TWI735101B (en) 2018-12-26 2021-08-01 南韓商Skc索密思股份有限公司 Composition for a polishing pad, polishing pad, and process for preparing the same
KR102174958B1 (en) 2019-03-27 2020-11-05 에스케이씨 주식회사 Polishing pad which minimizes occurence of defect and preparation method thereof
KR102277418B1 (en) 2019-05-21 2021-07-14 에스케이씨솔믹스 주식회사 Polishing pad with improved crosslinking density and preparation method thereof
TWI743831B (en) 2019-06-17 2021-10-21 南韓商Skc索密思股份有限公司 Composition for polishing pad, polishing pad and preparation method of semiconductor device
KR102237367B1 (en) 2019-06-17 2021-04-07 에스케이씨솔믹스 주식회사 Composition for polishing pad, polishing pad and preparation method of semiconductor device
KR102237351B1 (en) 2019-06-17 2021-04-07 에스케이씨솔믹스 주식회사 Composition for polishing pad, polishing pad and preparation method of semiconductor device
KR102237357B1 (en) 2019-06-17 2021-04-07 에스케이씨솔믹스 주식회사 Composition for polishing pad, polishing pad and preparation method of semiconductor device
KR102237362B1 (en) 2019-06-17 2021-04-07 에스케이씨솔믹스 주식회사 Composition for polishing pad, polishing pad and preparation method of semiconductor device
KR102197481B1 (en) 2019-06-27 2020-12-31 에스케이씨 주식회사 Polishing pad and preparation method thereof
KR102273097B1 (en) 2019-10-23 2021-07-05 에스케이씨솔믹스 주식회사 Composition for polishing pad, polishing pad and preparation method thereof
TWI741753B (en) 2019-10-29 2021-10-01 南韓商Skc索密思股份有限公司 Polishing pad, process for preparing the same, and process for preparing a semiconductor device using the same
KR102304965B1 (en) 2019-10-30 2021-09-24 에스케이씨솔믹스 주식회사 Polishing pad, preparation method thereof, and preparation method of semiconductor device using same
KR102188525B1 (en) 2019-10-29 2020-12-08 에스케이씨 주식회사 Polishing pad, preparation method thereof, and preparation method of semiconductor device using same
KR102287923B1 (en) 2019-10-30 2021-08-09 에스케이씨솔믹스 주식회사 Polishing pad, preparation method thereof, and preparation method of semiconductor device using same
KR102287235B1 (en) 2019-10-30 2021-08-06 에스케이씨솔믹스 주식회사 Polishing pad with controlled crosslinking and preparation method thereof
KR102298114B1 (en) 2019-11-05 2021-09-03 에스케이씨솔믹스 주식회사 Polishing pad, preparation method thereof, and preparation method of semiconductor device using same
KR102300050B1 (en) 2019-11-15 2021-09-08 에스케이씨솔믹스 주식회사 Polyol recycled from polishing pad and preparation method thereof
KR102300038B1 (en) 2019-11-15 2021-09-08 에스케이씨솔믹스 주식회사 Polyol composition recycled from polishing pad and preparation method thereof
KR102298111B1 (en) 2019-11-15 2021-09-03 에스케이씨솔믹스 주식회사 Polyurethane polishing pad comprising re-polyol and preparation method thereof
KR102293765B1 (en) 2019-11-21 2021-08-26 에스케이씨솔믹스 주식회사 Polishing pad, preparation method thereof, and preparation method of semiconductor device using same
KR102177748B1 (en) 2019-11-28 2020-11-11 에스케이씨 주식회사 Porous polishing pad and preparation method thereof
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11667061B2 (en) * 2020-04-18 2023-06-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming leveraged poromeric polishing pad
US11806829B2 (en) * 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
KR20200105465A (en) 2020-08-28 2020-09-07 에스케이씨 주식회사 Composition for polishing pad, polishing pad and preparation method thereof
KR20200105790A (en) 2020-09-01 2020-09-09 에스케이씨 주식회사 Composition for polishing pad, polishing pad and preparation method thereof
CN112091817B (en) * 2020-09-08 2022-06-17 中国航发贵州黎阳航空动力有限公司 Thin wall annular part terminal surface grinding tool
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
WO2024064259A1 (en) * 2022-09-22 2024-03-28 Cmc Materials Llc Chemical mechanical polishing pads with a disulfide bridge

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI312305B (en) * 2003-01-10 2009-07-21 3M Innovative Properties Co Pad constructions for chemical mechanical planarization applications
TWI329045B (en) * 2003-10-09 2010-08-21 Rohm & Haas Elect Mat Polishing pad and method of polishing semiconductor substrate

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885312A (en) * 1997-06-17 1999-03-23 Speedfam Corporation Grinding composition using abrasive particles on bubbles
US6231942B1 (en) * 1998-01-21 2001-05-15 Trexel, Inc. Method and apparatus for microcellular polypropylene extrusion, and polypropylene articles produced thereby
TWI228522B (en) * 1999-06-04 2005-03-01 Fuji Spinning Co Ltd Urethane molded products for polishing pad and method for making same
US6368200B1 (en) * 2000-03-02 2002-04-09 Agere Systems Guardian Corporation Polishing pads from closed-cell elastomer foam
US20020016139A1 (en) * 2000-07-25 2002-02-07 Kazuto Hirokawa Polishing tool and manufacturing method therefor
US8062098B2 (en) * 2000-11-17 2011-11-22 Duescher Wayne O High speed flat lapping platen
JP2005517290A (en) * 2002-02-06 2005-06-09 アプライド マテリアルズ インコーポレイテッド Method and apparatus for chemical mechanical polishing with eddy current monitoring system
US6841221B2 (en) * 2002-02-20 2005-01-11 Congoleum Corporation Heat activated coating texture
US6960120B2 (en) * 2003-02-10 2005-11-01 Cabot Microelectronics Corporation CMP pad with composite transparent window
JP2004345014A (en) * 2003-05-21 2004-12-09 Hitachi Chem Co Ltd Polishing pad and polishing method using the same
US20050017122A1 (en) * 2003-07-23 2005-01-27 Conitex-Sonoco Llc Apparatus and method for forming enlarged base on yarn carrier, and yarn carrier with enlarged base
JP2006128563A (en) * 2004-11-01 2006-05-18 Toyo Tire & Rubber Co Ltd Polishing pad for semiconductor wafer polishing and manufacturing method of semiconductor device
EP1704965A1 (en) * 2005-03-24 2006-09-27 Solvay Fluor GmbH Grinding aid
JP4986129B2 (en) * 2007-01-15 2012-07-25 東洋ゴム工業株式会社 Polishing pad
JP5117147B2 (en) * 2007-09-11 2013-01-09 富士紡ホールディングス株式会社 Polishing pad and method of manufacturing polishing pad
WO2009123659A1 (en) * 2008-04-01 2009-10-08 Innopad, Inc. Polishing pad with controlled void formation
EP2182024A3 (en) * 2008-10-30 2011-04-20 Rohm and Haas Company Flexible acrylic foam composition
JP5393434B2 (en) * 2008-12-26 2014-01-22 東洋ゴム工業株式会社 Polishing pad and manufacturing method thereof
JP5521243B2 (en) * 2009-07-03 2014-06-11 日本発條株式会社 Polishing holding pad
US20120009458A1 (en) * 2010-07-12 2012-01-12 Wu Donald P H Connecting structure for exteriorly connecting a battery cell and a load
US8702479B2 (en) * 2010-10-15 2014-04-22 Nexplanar Corporation Polishing pad with multi-modal distribution of pore diameters
US20120302148A1 (en) * 2011-05-23 2012-11-29 Rajeev Bajaj Polishing pad with homogeneous body having discrete protrusions thereon
JP5738731B2 (en) * 2011-09-22 2015-06-24 東洋ゴム工業株式会社 Polishing pad
JP5945874B2 (en) * 2011-10-18 2016-07-05 富士紡ホールディングス株式会社 Polishing pad and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI312305B (en) * 2003-01-10 2009-07-21 3M Innovative Properties Co Pad constructions for chemical mechanical planarization applications
TWI329045B (en) * 2003-10-09 2010-08-21 Rohm & Haas Elect Mat Polishing pad and method of polishing semiconductor substrate

Also Published As

Publication number Publication date
EP3027363B1 (en) 2020-01-15
JP2019077036A (en) 2019-05-23
CN105408063B (en) 2018-01-30
KR101801693B1 (en) 2017-11-27
EP3027363A1 (en) 2016-06-08
JP6517802B2 (en) 2019-05-22
JP6415521B2 (en) 2018-10-31
US20150038066A1 (en) 2015-02-05
SG11201600242PA (en) 2016-02-26
JP2016525459A (en) 2016-08-25
KR20160027075A (en) 2016-03-09
CN105408063A (en) 2016-03-16
WO2015017138A1 (en) 2015-02-05
TW201509595A (en) 2015-03-16
JP2017042910A (en) 2017-03-02

Similar Documents

Publication Publication Date Title
TWI579106B (en) Low density polishing pad
TWI588885B (en) Low density polishing pad
TWI591709B (en) Polishing pad with multi-modal distribution of pore diameters
TWI599448B (en) Polishing pad having porogens with liquid filler
TWI630983B (en) Polishing pad having polishing surface with continuous protrusions
TWI587979B (en) Polishing pad with alignment feature
TW201505759A (en) Polishing pad having polishing surface with continuous protrusions having tapered sidewalls
KR20220000098A (en) Polishing pad with regular micro-patterned surface